Skip Nav Destination

Issues

Select Year

Issue

Articles

Modifying the composition of hydrogen-terminated silicon nanoparticles synthesized in a nonthermal rf plasma

J. Vac. Sci. Technol. A 28, 161–169 (2010) https://doi.org/10.1116/1.3276451

View articletitled, Modifying the composition of hydrogen-terminated silicon nanoparticles synthesized in a nonthermal rf plasma

Supplementary Material

Open the PDF for in another window

Photoconduction in silicon rich oxide films obtained by low pressure chemical vapor deposition

J. A. Luna-López; M. Aceves-Mijares; J. Carrillo-López; A. Morales-Sánchez

J. Vac. Sci. Technol. A 28, 170–174 (2010) https://doi.org/10.1116/1.3276781

Abstract

View articletitled, Photoconduction in silicon rich oxide films obtained by low pressure chemical vapor deposition

Open the PDF for in another window

Coexistence of epitaxial Ta(111) and Ta(110) oriented magnetron sputtered thin film on c-cut sapphire

S. Gnanarajan; S. K. H. Lam; A. Bendavid

J. Vac. Sci. Technol. A 28, 175–181 (2010) https://doi.org/10.1116/1.3276801

Abstract

View articletitled, Coexistence of epitaxial Ta(111) and Ta(110) oriented magnetron sputtered thin film on c-cut sapphire

Open the PDF for in another window

Comparison of compressive and tensile relaxed composition-graded GaAsP and (Al)InGaP substrates

M. J. Mori; S. T. Boles; E. A. Fitzgerald

J. Vac. Sci. Technol. A 28, 182–188 (2010) https://doi.org/10.1116/1.3290762

Abstract

View articletitled, Comparison of compressive and tensile relaxed composition-graded GaAsP and (Al)InGaP substrates

Open the PDF for in another window

Fast and smooth etching of indium tin oxides in ${BCl}_{3} / {Cl}_{2}$ inductively coupled plasmas

H. B. Andagana; X. A. Cao

J. Vac. Sci. Technol. A 28, 189–192 (2010) https://doi.org/10.1116/1.3280919

Abstract

View articletitled, Fast and smooth etching of indium tin oxides in <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mrow><mtext>BCl</mtext></mrow><mn>3</mn></msub><mo>/</mo><msub><mrow><mtext>Cl</mtext></mrow><mn>2</mn></msub></mrow></math> inductively coupled plasmas

Open the PDF for in another window

Influence of the magnetron on the growth of aluminum nitride thin films deposited by reactive sputtering

G. F. Iriarte

J. Vac. Sci. Technol. A 28, 193–198 (2010) https://doi.org/10.1116/1.3280174

Abstract

View articletitled, Influence of the magnetron on the growth of aluminum nitride thin films deposited by reactive sputtering

Open the PDF for in another window

In situ observation of change in surface atomic arrangement of $Sc - O ∕ W (100)$ system during phase transition at high temperature

T. Nagatomi; Y. Nakanishi; Y. Takai

J. Vac. Sci. Technol. A 28, 199–206 (2010) https://doi.org/10.1116/1.3281475

Abstract

View articletitled, In situ observation of change in surface atomic arrangement of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Sc</mi><mo>–</mo><mi mathvariant="normal">O</mi><mo>∕</mo><mi mathvariant="normal">W</mi><mrow><mo>(</mo><mn>100</mn><mo>)</mo></mrow></mrow></math> system during phase transition at high temperature

Open the PDF for in another window

Oxygen plasma damage to blanket and patterned ultralow- $κ$ surfaces

J. Bao; H. Shi; H. Huang; P. S. Ho; M. L. McSwiney; M. D. Goodner; M. Moinpour; G. M. Kloster

J. Vac. Sci. Technol. A 28, 207–215 (2010) https://doi.org/10.1116/1.3281525

Abstract

View articletitled, Oxygen plasma damage to blanket and patterned ultralow-<math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">κ</mi></math> surfaces

Open the PDF for in another window

Rapid thermal annealing of ZnO thin films grown at room temperature

Young Rae Jang; Keon-Ho Yoo; Seung Min Park

J. Vac. Sci. Technol. A 28, 216–219 (2010) https://doi.org/10.1116/1.3290759

Abstract

View articletitled, Rapid thermal annealing of ZnO thin films grown at room temperature

Open the PDF for in another window

Experiences from nonevaporable getter-coated vacuum chambers at the MAX II synchrotron light source

A. Hansson; E. Wallén; M. Berglund; R. Kersevan; M. Hahn

J. Vac. Sci. Technol. A 28, 220–225 (2010) https://doi.org/10.1116/1.3281432

Abstract

View articletitled, Experiences from nonevaporable getter-coated vacuum chambers at the MAX II synchrotron light source

Open the PDF for in another window

Etch mechanism of ${In}_{2} O_{3}$ and ${SnO}_{2}$ thin films in HBr-based inductively coupled plasmas

Kwang-Ho Kwon; Alexander Efremov; Moonkeun Kim; Nam Ki Min; Jaehwa Jeong; MunPyo Hong; Kwangsoo Kim

J. Vac. Sci. Technol. A 28, 226–231 (2010) https://doi.org/10.1116/1.3294712

Abstract

View articletitled, Etch mechanism of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mrow><mtext>In</mtext></mrow><mn>2</mn></msub><msub><mtext>O</mtext><mn>3</mn></msub></mrow></math> and <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mrow><mtext>SnO</mtext></mrow><mn>2</mn></msub></mrow></math> thin films in HBr-based inductively coupled plasmas

Open the PDF for in another window

Measurement of adsorption isotherms in the gas phase on native titanium dioxide surfaces by quartz crystal microbalance technique

A. Marx; W. Langel

J. Vac. Sci. Technol. A 28, 232–237 (2010) https://doi.org/10.1116/1.3294716

Abstract

View articletitled, Measurement of adsorption isotherms in the gas phase on native titanium dioxide surfaces by quartz crystal microbalance technique

Open the PDF for in another window

Metal-organic chemical vapor deposition of aluminum oxide thin films via pyrolysis of dimethylaluminum isopropoxide

Benjamin W. Schmidt; William J. Sweet, III; Eric J. Bierschenk; Cameron K. Gren; Timothy P. Hanusa; Bridget R. Rogers

J. Vac. Sci. Technol. A 28, 238–243 (2010) https://doi.org/10.1116/1.3294718

Abstract

View articletitled, Metal-organic chemical vapor deposition of aluminum oxide thin films via pyrolysis of dimethylaluminum isopropoxide

Open the PDF for in another window

Tribological and mechanical properties of $nanocrystalline-TiC / a -C$ nanocomposite thin films

J. Musil; P. Novák; R. Čerstvý; Z. Soukup

J. Vac. Sci. Technol. A 28, 244–249 (2010) https://doi.org/10.1116/1.3294717

Abstract

View articletitled, Tribological and mechanical properties of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mtext>nanocrystalline-TiC</mtext><mo>/</mo><mi>a</mi><mtext>-C</mtext></mrow></math> nanocomposite thin films

Open the PDF for in another window

Etching of $Si O_{2}$ in $C_{4} F_{8} ∕ Ar$ plasmas. I. Numeric kinetics modeling and Monte Carlo simulation in a three-dimensional profile simulator

Wei Guo; Herbert H. Sawin

J. Vac. Sci. Technol. A 28, 250–258 (2010) https://doi.org/10.1116/1.3290760

Abstract

View articletitled, Etching of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Si</mi><msub><mi mathvariant="normal">O</mi><mn>2</mn></msub></mrow></math> in <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi mathvariant="normal">C</mi><mn>4</mn></msub><msub><mi mathvariant="normal">F</mi><mn>8</mn></msub><mo>∕</mo><mi mathvariant="normal">Ar</mi></mrow></math> plasmas. I. Numeric kinetics modeling and Monte Carlo simulation in a three-dimensional profile simulator

Open the PDF for in another window

Etching of $Si O_{2}$ in $C_{4} F_{8} ∕ Ar$ plasmas. II. Simulation of surface roughening and local polymerization

Wei Guo; Herbert H. Sawin

J. Vac. Sci. Technol. A 28, 259–270 (2010) https://doi.org/10.1116/1.3290766

Abstract

View articletitled, Etching of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Si</mi><msub><mi mathvariant="normal">O</mi><mn>2</mn></msub></mrow></math> in <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi mathvariant="normal">C</mi><mn>4</mn></msub><msub><mi mathvariant="normal">F</mi><mn>8</mn></msub><mo>∕</mo><mi mathvariant="normal">Ar</mi></mrow></math> plasmas. II. Simulation of surface roughening and local polymerization

Open the PDF for in another window

Sr flux stability against oxidation in oxide-molecular-beam-epitaxy environment: Flux, geometry, and pressure dependence

Y. S. Kim; Namrata Bansal; Carlos Chaparro; Heiko Gross; Seongshik Oh

J. Vac. Sci. Technol. A 28, 271–276 (2010) https://doi.org/10.1116/1.3298880

Abstract

View articletitled, Sr flux stability against oxidation in oxide-molecular-beam-epitaxy environment: Flux, geometry, and pressure dependence

Open the PDF for in another window

Etching studies of silica glasses in ${SF}_{6} / Ar$ inductively coupled plasmas: Implications for microfluidic devices fabrication

L. Lallement; C. Gosse; C. Cardinaud; M.-C. Peignon-Fernandez; A. Rhallabi

J. Vac. Sci. Technol. A 28, 277–286 (2010) https://doi.org/10.1116/1.3298875

Abstract

View articletitled, Etching studies of silica glasses in <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mrow><mtext>SF</mtext></mrow><mn>6</mn></msub><mo>/</mo><mtext>Ar</mtext></mrow></math> inductively coupled plasmas: Implications for microfluidic devices fabrication

Open the PDF for in another window

Surface-charging effect of capacitively coupled plasmas driven by combined dc/rf sources

Quan-Zhi Zhang; Wei Jiang; Shu-Xia Zhao; You-Nian Wang

J. Vac. Sci. Technol. A 28, 287–292 (2010) https://doi.org/10.1116/1.3305537

Abstract

View articletitled, Surface-charging effect of capacitively coupled plasmas driven by combined dc/rf sources

Open the PDF for in another window

Amorphization of Si(100) by ${Ar}^{+}$ -ion bombardment studied with spectroscopic and time-resolved second-harmonic generation

P. M. Gevers; J. J. H. Gielis; H. C. W. Beijerinck; M. C. M. van de Sanden; W. M. M. Kessels

J. Vac. Sci. Technol. A 28, 293–301 (2010) https://doi.org/10.1116/1.3305812

Abstract

View articletitled, Amorphization of Si(100) by <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msup><mrow><mtext>Ar</mtext></mrow><mo>+</mo></msup></mrow></math>-ion bombardment studied with spectroscopic and time-resolved second-harmonic generation

Open the PDF for in another window

TaN metal gate etch mechanisms in $B {Cl}_{3}$ -based plasmas

Denis Shamiryan; Andrey Danila; Mikhail R. Baklanov; Werner Boullart

J. Vac. Sci. Technol. A 28, 302–305 (2010) https://doi.org/10.1116/1.3280170

Abstract

View articletitled, TaN metal gate etch mechanisms in <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">B</mi><msub><mi mathvariant="normal">Cl</mi><mn>3</mn></msub></mrow></math>-based plasmas

Open the PDF for in another window

Quantum turbulence at room temperature

C. Llaguno; A. Muriel

J. Vac. Sci. Technol. A 28, 306–308 (2010) https://doi.org/10.1116/1.3294720

Abstract

View articletitled, Quantum turbulence at room temperature

Open the PDF for in another window

Self-bias voltage diagnostics for the amorphous-to-microcrystalline transition in a-Si:H under a hydrogen-plasma treatment

A. Hadjadj; N. Pham; P. Roca i Cabarrocas; O. Jbara

J. Vac. Sci. Technol. A 28, 309–313 (2010) https://doi.org/10.1116/1.3305719

Abstract

View articletitled, Self-bias voltage diagnostics for the amorphous-to-microcrystalline transition in a-Si:H under a hydrogen-plasma treatment

Open the PDF for in another window

Combinatorial characterization of transparent conductive properties of Ga-doped ZnO films cosputtered from electron cyclotron resonance and rf magnetron plasma sources

Housei Akazawa

J. Vac. Sci. Technol. A 28, 314–321 (2010) https://doi.org/10.1116/1.3328053

Abstract

View articletitled, Combinatorial characterization of transparent conductive properties of Ga-doped ZnO films cosputtered from electron cyclotron resonance and rf magnetron plasma sources

Open the PDF for in another window

Plasma kinetics of $Ar / O_{2}$ magnetron discharge by two-dimensional multifluid modeling

C. Costin; T. M. Minea; G. Popa; G. Gousset

J. Vac. Sci. Technol. A 28, 322–328 (2010) https://doi.org/10.1116/1.3332583

Abstract

View articletitled, Plasma kinetics of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mtext>Ar</mtext><mo>/</mo><msub><mtext>O</mtext><mn>2</mn></msub></mrow></math> magnetron discharge by two-dimensional multifluid modeling

Open the PDF for in another window

Effects of working pressure on physical properties of tungsten-oxide thin films sputtered from oxide target

I. Riech; M. Acosta; J. L. Peña; P. Bartolo-Pérez

J. Vac. Sci. Technol. A 28, 329–333 (2010) https://doi.org/10.1116/1.3333423

Abstract

View articletitled, Effects of working pressure on physical properties of tungsten-oxide thin films sputtered from oxide target

Open the PDF for in another window

Model for aspect ratio dependent etch modulated processing

Peter J. Gilgunn; J. Fernando Alfaro; Gary K. Fedder

J. Vac. Sci. Technol. A 28, 334–346 (2010) https://doi.org/10.1116/1.3305716

Abstract

View articletitled, Model for aspect ratio dependent etch modulated processing

Open the PDF for in another window

Characterization of worn Ti–Si cathodes used for reactive cathodic arc evaporation

J. Q. Zhu; A. Eriksson; N. Ghafoor; M. P. Johansson; J. Sjölén; L. Hultman; J. Rosén; M. Odén

J. Vac. Sci. Technol. A 28, 347–353 (2010) https://doi.org/10.1116/1.3330767

Abstract

View articletitled, Characterization of worn Ti–Si cathodes used for reactive cathodic arc evaporation

Open the PDF for in another window

$β {-Ga}_{2} O_{3}$ growth by plasma-assisted molecular beam epitaxy

Min-Ying Tsai; Oliver Bierwagen; Mark E. White; James S. Speck

J. Vac. Sci. Technol. A 28, 354–359 (2010) https://doi.org/10.1116/1.3294715

Abstract

View articletitled, <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi>β</mi><msub><mrow><mtext>-Ga</mtext></mrow><mn>2</mn></msub><msub><mtext>O</mtext><mn>3</mn></msub></mrow></math> growth by plasma-assisted molecular beam epitaxy

Open the PDF for in another window

Surface loss rates of H and Cl radicals in an inductively coupled plasma etcher derived from time-resolved electron density and optical emission measurements

G. A. Curley; L. Gatilova; S. Guilet; S. Bouchoule; G. S. Gogna; N. Sirse; S. Karkari; J. P. Booth

J. Vac. Sci. Technol. A 28, 360–372 (2010) https://doi.org/10.1116/1.3330766

Abstract

View articletitled, Surface loss rates of H and Cl radicals in an inductively coupled plasma etcher derived from time-resolved electron density and optical emission measurements

Open the PDF for in another window

Surface modification of phyllosilicate minerals by fluorination methods

Alain Tressaud; Christine Labrugère; Etienne Durand; Hélène Serier; Larisa P. Demyanova

J. Vac. Sci. Technol. A 28, 373–381 (2010) https://doi.org/10.1116/1.3328826

Abstract

View articletitled, Surface modification of phyllosilicate minerals by fluorination methods

Open the PDF for in another window

Letters

X-ray photoelectron spectroscopy study of polyimide thin films with Ar cluster ion depth profiling

T. Miyayama; N. Sanada; M. Suzuki; J. S. Hammond; S.-Q. D. Si; A. Takahara

J. Vac. Sci. Technol. A 28, L1–L4 (2010) https://doi.org/10.1116/1.3336242

Abstract

View articletitled, X-ray photoelectron spectroscopy study of polyimide thin films with Ar cluster ion depth profiling

Open the PDF for in another window

Articles

Modifying the composition of hydrogen-terminated silicon nanoparticles synthesized in a nonthermal rf plasma

Photoconduction in silicon rich oxide films obtained by low pressure chemical vapor deposition

Coexistence of epitaxial Ta(111) and Ta(110) oriented magnetron sputtered thin film on c-cut sapphire

Comparison of compressive and tensile relaxed composition-graded GaAsP and (Al)InGaP substrates

Fast and smooth etching of indium tin oxides in ${BCl}_{3} / {Cl}_{2}$ inductively coupled plasmas

Influence of the magnetron on the growth of aluminum nitride thin films deposited by reactive sputtering

In situ observation of change in surface atomic arrangement of $Sc - O ∕ W (100)$ system during phase transition at high temperature

Oxygen plasma damage to blanket and patterned ultralow- $κ$ surfaces

Rapid thermal annealing of ZnO thin films grown at room temperature

Experiences from nonevaporable getter-coated vacuum chambers at the MAX II synchrotron light source

Etch mechanism of ${In}_{2} O_{3}$ and ${SnO}_{2}$ thin films in HBr-based inductively coupled plasmas

Measurement of adsorption isotherms in the gas phase on native titanium dioxide surfaces by quartz crystal microbalance technique

Metal-organic chemical vapor deposition of aluminum oxide thin films via pyrolysis of dimethylaluminum isopropoxide

Tribological and mechanical properties of $nanocrystalline-TiC / a -C$ nanocomposite thin films

Etching of $Si O_{2}$ in $C_{4} F_{8} ∕ Ar$ plasmas. I. Numeric kinetics modeling and Monte Carlo simulation in a three-dimensional profile simulator

Etching of $Si O_{2}$ in $C_{4} F_{8} ∕ Ar$ plasmas. II. Simulation of surface roughening and local polymerization

Sr flux stability against oxidation in oxide-molecular-beam-epitaxy environment: Flux, geometry, and pressure dependence

Etching studies of silica glasses in ${SF}_{6} / Ar$ inductively coupled plasmas: Implications for microfluidic devices fabrication

Surface-charging effect of capacitively coupled plasmas driven by combined dc/rf sources

Amorphization of Si(100) by ${Ar}^{+}$ -ion bombardment studied with spectroscopic and time-resolved second-harmonic generation

TaN metal gate etch mechanisms in $B {Cl}_{3}$ -based plasmas

Quantum turbulence at room temperature

Self-bias voltage diagnostics for the amorphous-to-microcrystalline transition in a-Si:H under a hydrogen-plasma treatment

Combinatorial characterization of transparent conductive properties of Ga-doped ZnO films cosputtered from electron cyclotron resonance and rf magnetron plasma sources

Plasma kinetics of $Ar / O_{2}$ magnetron discharge by two-dimensional multifluid modeling

Effects of working pressure on physical properties of tungsten-oxide thin films sputtered from oxide target

Model for aspect ratio dependent etch modulated processing

Characterization of worn Ti–Si cathodes used for reactive cathodic arc evaporation

$β {-Ga}_{2} O_{3}$ growth by plasma-assisted molecular beam epitaxy

Surface loss rates of H and Cl radicals in an inductively coupled plasma etcher derived from time-resolved electron density and optical emission measurements

Surface modification of phyllosilicate minerals by fluorination methods

Letters

X-ray photoelectron spectroscopy study of polyimide thin films with Ar cluster ion depth profiling

RSS

Resources

Explore

pubs.aip.org

Connect with AIP Publishing

Issues

Articles

Letters

RSS

Resources

Explore

pubs.aip.org

Connect with AIP Publishing

This Feature Is Available To Subscribers Only