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Review Article

Beyond $β - C_{3} N_{4}$ —Fullerene-like carbon nitride: A promising coating material

J. Vac. Sci. Technol. A 25, 633–644 (2007) https://doi.org/10.1116/1.2738505

View articletitled, Beyond <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi>β</mi><mtext>-</mtext><msub><mi mathvariant="normal">C</mi><mn>3</mn></msub><msub><mi mathvariant="normal">N</mi><mn>4</mn></msub></mrow></math>—Fullerene-like carbon nitride: A promising coating material

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Regular Articles

$C O - D_{2} O$ coadlayers on Pt(111): Vibrational studies at low coverages

Yuhai Hu; Peter R. Norton; Keith Griffiths

J. Vac. Sci. Technol. A 25, 645–650 (2007) https://doi.org/10.1116/1.2735954

Abstract

View articletitled, <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">C</mi><mi mathvariant="normal">O</mi><mo>–</mo><msub><mi mathvariant="normal">D</mi><mn>2</mn></msub><mi mathvariant="normal">O</mi></mrow></math> coadlayers on Pt(111): Vibrational studies at low coverages

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Effects of substrate bias and nitrogen flow ratio on the resistivity and crystal structure of reactively sputtered $Zr N_{x}$ films at elevated temperature

J. S. Jeng; S. H. Wang; J. S. Chen

J. Vac. Sci. Technol. A 25, 651–658 (2007) https://doi.org/10.1116/1.2735966

Abstract

View articletitled, Effects of substrate bias and nitrogen flow ratio on the resistivity and crystal structure of reactively sputtered <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Zr</mi><msub><mi mathvariant="normal">N</mi><mi>x</mi></msub></mrow></math> films at elevated temperature

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Influence of the film properties on the plasma etching dynamics of rf-sputtered indium zinc oxide layers

L. Stafford; W. T. Lim; S. J. Pearton; M. Chicoine; S. Gujrathi; F. Schiettekatte; Jae-Soung Park; Ju-Il Song; Young-Woo Heo; Joon-Hyung Lee; Jeong-Joo Kim; I. I. Kravchenko

J. Vac. Sci. Technol. A 25, 659–665 (2007) https://doi.org/10.1116/1.2736679

Abstract

View articletitled, Influence of the film properties on the plasma etching dynamics of rf-sputtered indium zinc oxide layers

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Role of energy in low-temperature high-rate formation of hydrophilic $Ti O_{2}$ thin films using pulsed magnetron sputtering

J. Musil; J. Šícha; D. Heřman; R. Čerstvý

J. Vac. Sci. Technol. A 25, 666–674 (2007) https://doi.org/10.1116/1.2736680

Abstract

View articletitled, Role of energy in low-temperature high-rate formation of hydrophilic <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Ti</mi><msub><mi mathvariant="normal">O</mi><mn>2</mn></msub></mrow></math> thin films using pulsed magnetron sputtering

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Influence of electron irradiation and heating on secondary electron yields from non-evaporable getter films observed with in situ x-ray photoelectron spectroscopy

Michiru Nishiwaki; Shigeki Kato

J. Vac. Sci. Technol. A 25, 675–679 (2007) https://doi.org/10.1116/1.2738491

Abstract

View articletitled, Influence of electron irradiation and heating on secondary electron yields from non-evaporable getter films observed with in situ x-ray photoelectron spectroscopy

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Atomic simulation of SiC etching by energetic $Si F_{3}$

F. Gou; Meng Chuanliang; Chen Lingzhouting; Qiu Qian

J. Vac. Sci. Technol. A 25, 680–685 (2007) https://doi.org/10.1116/1.2735965

Abstract

View articletitled, Atomic simulation of SiC etching by energetic <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Si</mi><msub><mi mathvariant="normal">F</mi><mn>3</mn></msub></mrow></math>

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Thermally regulated valve for minute flows

Hugo Nguyen; Johan Bejhed; Johan Köhler; Greger Thornell

J. Vac. Sci. Technol. A 25, 686–691 (2007) https://doi.org/10.1116/1.2738506

Abstract

View articletitled, Thermally regulated valve for minute flows

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Fabrication of long-range surface plasmon-polariton waveguides in lithium niobate on silicon

Greg Mattiussi; Nancy Lahoud; Robert Charbonneau; Pierre Berini

J. Vac. Sci. Technol. A 25, 692–700 (2007) https://doi.org/10.1116/1.2740294

Abstract

View articletitled, Fabrication of long-range surface plasmon-polariton waveguides in lithium niobate on silicon

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Characterizations of InN films on Si(111) substrate grown by metal-organic chemical vapor deposition with a predeposited In layer and a two-step growth method

K. J. Chang; J. Y. Chang; M. C. Chen; S. M. Lahn; C. J. Kao; Z. Y. Li; W. Y. Uen; G. C. Chi

J. Vac. Sci. Technol. A 25, 701–705 (2007) https://doi.org/10.1116/1.2740293

Abstract

View articletitled, Characterizations of InN films on Si(111) substrate grown by metal-organic chemical vapor deposition with a predeposited In layer and a two-step growth method

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Sheet resistance and crystallinity of Ga- and Al-implanted zinc oxide thin films with postannealing

Tokiyoshi Matsuda; Mamoru Furuta; Takahiro Hiramatsu; Hiroshi Furuta; Takashi Hirao

J. Vac. Sci. Technol. A 25, 706–710 (2007) https://doi.org/10.1116/1.2735958

Abstract

View articletitled, Sheet resistance and crystallinity of Ga- and Al-implanted zinc oxide thin films with postannealing

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Oxidation of arc-evaporated ${Al}_{1 - x} {Cr}_{x} N$ coatings

A. E. Reiter; C. Mitterer; B. Sartory

J. Vac. Sci. Technol. A 25, 711–720 (2007) https://doi.org/10.1116/1.2738492

Abstract

View articletitled, Oxidation of arc-evaporated <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi mathvariant="normal">Al</mi><mrow><mn>1</mn><mo>−</mo><mi>x</mi></mrow></msub><msub><mi mathvariant="normal">Cr</mi><mi>x</mi></msub><mi mathvariant="normal">N</mi></mrow></math> coatings

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Effect of ambient pressure and nickel contamination on the dimer-dangling-bond surface state of $Si (001) 2 \times 1$

B. Kolditz; K. R. Roos

J. Vac. Sci. Technol. A 25, 721–725 (2007) https://doi.org/10.1116/1.2740295

Abstract

View articletitled, Effect of ambient pressure and nickel contamination on the dimer-dangling-bond surface state of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Si</mi><mrow><mo>(</mo><mn>001</mn><mo>)</mo></mrow><mn>2</mn><mo>×</mo><mn>1</mn></mrow></math>

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Production of energetic ions in plasma by ambipolar fields: Application to etching

Wontaek Park; Yu. N. Tolmachev; V. N. Volynets; V. G. Pashkovskiy

J. Vac. Sci. Technol. A 25, 726–730 (2007) https://doi.org/10.1116/1.2743647

Abstract

View articletitled, Production of energetic ions in plasma by ambipolar fields: Application to etching

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Resonances in electron stimulated desorption yield of cesium atoms from germanium monolayer-covered tungsten

V. N. Ageev; Yu. A. Kuznetsov; T. E. Madey

J. Vac. Sci. Technol. A 25, 731–735 (2007) https://doi.org/10.1116/1.2746043

Abstract

View articletitled, Resonances in electron stimulated desorption yield of cesium atoms from germanium monolayer-covered tungsten

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Hydrogen and thermal deoxidations of InSb and GaSb substrates for molecular beam epitaxial growth

E. Weiss; O. Klin; S. Grossman; S. Greenberg; P. C. Klipstein; R. Akhvlediani; R. Tessler; R. Edrei; A. Hoffman

J. Vac. Sci. Technol. A 25, 736–745 (2007) https://doi.org/10.1116/1.2746045

Abstract

View articletitled, Hydrogen and thermal deoxidations of InSb and GaSb substrates for molecular beam epitaxial growth

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Removal of carbon deposits in narrow gaps by oxygen plasmas at low pressure

J. A. Ferreira; F. L. Tabarés; D. Tafalla

J. Vac. Sci. Technol. A 25, 746–750 (2007) https://doi.org/10.1116/1.2746046

Abstract

View articletitled, Removal of carbon deposits in narrow gaps by oxygen plasmas at low pressure

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Microarea analysis of iron and phosphorus by resonance photoionization sputtered neutral mass spectrometry

H. Shichi; S. Osabe; M. Sugaya; K. Kanehori; H. Kakibayashi; Y. Mitsui

J. Vac. Sci. Technol. A 25, 751–757 (2007) https://doi.org/10.1116/1.2746048

Abstract

View articletitled, Microarea analysis of iron and phosphorus by resonance photoionization sputtered neutral mass spectrometry

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Efficient numerical solution of the Clausing problem

Amitabh Mohan; Robert V. Tompson; Sudarshan K. Loyalka

J. Vac. Sci. Technol. A 25, 758–762 (2007) https://doi.org/10.1116/1.2746875

Abstract

View articletitled, Efficient numerical solution of the Clausing problem

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Investigation of vacuum system requirements for a $5 km$ baseline gravitational-wave detector

S. Sunil; D. G. Blair

J. Vac. Sci. Technol. A 25, 763–768 (2007) https://doi.org/10.1116/1.2743645

Abstract

View articletitled, Investigation of vacuum system requirements for a <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mn>5</mn><mspace width="0.3em"></mspace><mi>km</mi></mrow></math> baseline gravitational-wave detector

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Improved understanding of an electron beam charge compensation method for magnetic sector secondary ion mass spectrometer analysis of insulators

Z. Zhu; C. Gu; F. A. Stevie; D. P. Griffis

J. Vac. Sci. Technol. A 25, 769–774 (2007) https://doi.org/10.1116/1.2746044

Abstract

View articletitled, Improved understanding of an electron beam charge compensation method for magnetic sector secondary ion mass spectrometer analysis of insulators

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Investigation of atomic-layer-deposited ruthenium nanocrystal growth on $Si O_{2}$ and ${Al}_{2} O_{3}$ films

Min Zhang; Wei Chen; Shi-Jin Ding; Xin-Peng Wang; David Wei Zhang; Li-Kang Wang

J. Vac. Sci. Technol. A 25, 775–780 (2007) https://doi.org/10.1116/1.2746874

Abstract

View articletitled, Investigation of atomic-layer-deposited ruthenium nanocrystal growth on <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Si</mi><msub><mi mathvariant="normal">O</mi><mn>2</mn></msub></mrow></math> and <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi mathvariant="normal">Al</mi><mn>2</mn></msub><msub><mi mathvariant="normal">O</mi><mn>3</mn></msub></mrow></math> films

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Performance and analysis of an electron cyclotron resonance plasma cathode

Y. Hidaka; J. E. Foster; W. D. Getty; R. M. Gilgenbach; Y. Y. Lau

J. Vac. Sci. Technol. A 25, 781–790 (2007) https://doi.org/10.1116/1.2746041

Abstract

View articletitled, Performance and analysis of an electron cyclotron resonance plasma cathode

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Vacuum systems for the ILC helical undulator

O. B. Malyshev; D. J. Scott; I. R. Bailey; D. P. Barber; E. Baynham; T. Bradshaw; A. Brummitt; S. Carr; J. A. Clarke; P. Cooke; J. B. Dainton; Y. Ivanyushenkov; L. I. Malysheva; G. A. Moortgat-Pick; J. Rochford

J. Vac. Sci. Technol. A 25, 791–801 (2007) https://doi.org/10.1116/1.2746876

Abstract

View articletitled, Vacuum systems for the ILC helical undulator

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Impact of etching kinetics on the roughening of thermal $Si O_{2}$ and low- $k$ dielectric coral films in fluorocarbon plasmas

Yunpeng Yin; Herbert H. Sawin

J. Vac. Sci. Technol. A 25, 802–811 (2007) https://doi.org/10.1116/1.2748797

Abstract

View articletitled, Impact of etching kinetics on the roughening of thermal <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Si</mi><msub><mi mathvariant="normal">O</mi><mn>2</mn></msub></mrow></math> and low-<math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">k</mi></math> dielectric coral films in fluorocarbon plasmas

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Sublimation behavior of $Si O_{2}$ from low- and high-index silicon surfaces

J. C. Moore; J. L. Skrobiszewski; A. A. Baski

J. Vac. Sci. Technol. A 25, 812–815 (2007) https://doi.org/10.1116/1.2748798

Abstract

View articletitled, Sublimation behavior of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Si</mi><msub><mi mathvariant="normal">O</mi><mn>2</mn></msub></mrow></math> from low- and high-index silicon surfaces

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TM01-mode microwave propagation property analysis for plasmas with disk-plate windows by a finite-difference time-domain method

Yoshimasa Okamura; Yoshito Yamamoto; Kazuhiro Fujita; Taiki Miyoshi; Koji Teramoto; Hideki Kawaguchi; Shin Kagami; Masakazu Furukawa

J. Vac. Sci. Technol. A 25, 816–823 (2007) https://doi.org/10.1116/1.2748804

Abstract

View articletitled, TM01-mode microwave propagation property analysis for plasmas with disk-plate windows by a finite-difference time-domain method

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Determination of the sticking probability of a Zr–V–Fe nonevaporable getter strip

Ch. Day; X. Luo; A. Conte; A. Bonucci; P. Manini

J. Vac. Sci. Technol. A 25, 824–830 (2007) https://doi.org/10.1116/1.2748799

Abstract

View articletitled, Determination of the sticking probability of a Zr–V–Fe nonevaporable getter strip

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Influence of the normalized ion flux on the constitution of alumina films deposited by plasma-assisted chemical vapor deposition

Denis Kurapov; Jennifer Reiss; David H. Trinh; Lars Hultman; Jochen M. Schneider

J. Vac. Sci. Technol. A 25, 831–836 (2007) https://doi.org/10.1116/1.2748802

Abstract

View articletitled, Influence of the normalized ion flux on the constitution of alumina films deposited by plasma-assisted chemical vapor deposition

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Effects of bias on surface properties of TiN films fabricated by hollow cathode discharge

H. F. Jiang; X. B. Tian; S. Q. Yang; Ricky K. Y. Fu; Paul K. Chu

J. Vac. Sci. Technol. A 25, 837–842 (2007) https://doi.org/10.1116/1.2748803

Abstract

View articletitled, Effects of bias on surface properties of TiN films fabricated by hollow cathode discharge

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Oxygen plasma treatment and deposition of $C N_{x}$ on a fluorinated polymer matrix composite for improved erosion resistance

C. Muratore; A. Korenyi-Both; J. E. Bultman; A. R. Waite; J. G. Jones; T. M. Storage; A. A. Voevodin

J. Vac. Sci. Technol. A 25, 843–849 (2007) https://doi.org/10.1116/1.2746049

Abstract

View articletitled, Oxygen plasma treatment and deposition of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">C</mi><msub><mi mathvariant="normal">N</mi><mi>x</mi></msub></mrow></math> on a fluorinated polymer matrix composite for improved erosion resistance

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Molecular beam epitaxy growth of the dilute nitride $Ga {As}_{1 - x} N_{x}$ with a helical resonator plasma source

N. Zangenberg; D. A. Beaton; T. Tiedje; S. Tixier; M. Adamcyk; R. Kumaran; J. A. MacKenzie; E. Nodwell; E. C. Young; G. I. Sproule

J. Vac. Sci. Technol. A 25, 850–856 (2007) https://doi.org/10.1116/1.2748800

Abstract

View articletitled, Molecular beam epitaxy growth of the dilute nitride <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Ga</mi><msub><mi mathvariant="normal">As</mi><mrow><mn>1</mn><mo>−</mo><mi>x</mi></mrow></msub><msub><mi mathvariant="normal">N</mi><mi>x</mi></msub></mrow></math> with a helical resonator plasma source

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$a$ -plane ${Mg}_{x} {Zn}_{1 - x} O$ films deposited on $r$ -sapphire and its surface acoustic wave characteristics

Ying Chen; Gaurav Saraf; Yicheng Lu; Leszek S. Wielunski; Theo Siegrist

J. Vac. Sci. Technol. A 25, 857–861 (2007) https://doi.org/10.1116/1.2748801

Abstract

View articletitled, <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">a</mi></math>-plane <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi mathvariant="normal">Mg</mi><mi>x</mi></msub><msub><mi mathvariant="normal">Zn</mi><mrow><mn>1</mn><mo>−</mo><mi>x</mi></mrow></msub><mi mathvariant="normal">O</mi></mrow></math> films deposited on <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">r</mi></math>-sapphire and its surface acoustic wave characteristics

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PAPERS FROM THE 53RD INTERNATIONAL SYMPOSIUM OF AVS

Applied Surface Science

Surface and depth profile investigation of a phosphorylcholine-based contact lens using time of flight secondary ion mass spectrometry

Robert M. Braun; Scott J. Ingham; Patricia S. Harmon; Daniel J. Hook

J. Vac. Sci. Technol. A 25, 866–871 (2007) https://doi.org/10.1116/1.2432350

Abstract

View articletitled, Surface and depth profile investigation of a phosphorylcholine-based contact lens using time of flight secondary ion mass spectrometry

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Interfacial interactions of poly(ether ketone ketone) polymer coatings onto oxide-free phosphate films on an aluminum surface

A. L. Asunskis; P. M. A. Sherwood

J. Vac. Sci. Technol. A 25, 872–877 (2007) https://doi.org/10.1116/1.2712188

Abstract

View articletitled, Interfacial interactions of poly(ether ketone ketone) polymer coatings onto oxide-free phosphate films on an aluminum surface

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Application of multivariate statistical analysis methods for improved time-of-flight secondary ion mass spectrometry depth profiling of buried interfaces and particulate

K. G. Lloyd

J. Vac. Sci. Technol. A 25, 878–885 (2007) https://doi.org/10.1116/1.2735950

Abstract

View articletitled, Application of multivariate statistical analysis methods for improved time-of-flight secondary ion mass spectrometry depth profiling of buried interfaces and particulate

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Fundamental study of erucamide used as a slip agent

J. Chen; J. Li; T. Hu; B. Walther

J. Vac. Sci. Technol. A 25, 886–892 (2007) https://doi.org/10.1116/1.2749523

Abstract

View articletitled, Fundamental study of erucamide used as a slip agent

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Surface potential measurement of human hair using Kelvin probe microscopy

Richard A. Lodge; Bharat Bhushan

J. Vac. Sci. Technol. A 25, 893–902 (2007) https://doi.org/10.1116/1.2715965

Abstract

View articletitled, Surface potential measurement of human hair using Kelvin probe microscopy

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Large-area pulsed-laser deposition of dielectric and ferroelectric thin films

Shigeki Sakai; Mitsue Takahashi; Kennichi Motohashi; Yuji Yamaguchi; Naomasa Yui; Takichi Kobayashi

J. Vac. Sci. Technol. A 25, 903–907 (2007) https://doi.org/10.1116/1.2748808

Abstract

View articletitled, Large-area pulsed-laser deposition of dielectric and ferroelectric thin films

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Ordered Au(111) layers on Si(111)

Ana Silva; Kjeld Pedersen; Lars Diekhöner; Per Morgen; Zheshen Li

J. Vac. Sci. Technol. A 25, 908–911 (2007) https://doi.org/10.1116/1.2715964

Abstract

View articletitled, Ordered Au(111) layers on Si(111)

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Study of photocatalytic activity of ${TiO}_{2}$ thin films prepared in various $Ar ∕ O_{2}$ ratio and sputtering gas pressure

S. Biswas; K. Prabakar; T. Takahashi; T. Nakashima; Y. Kubota; A. Fujishima

J. Vac. Sci. Technol. A 25, 912–916 (2007) https://doi.org/10.1116/1.2717194

Abstract

View articletitled, Study of photocatalytic activity of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi>TiO</mi><mn>2</mn></msub></mrow></math> thin films prepared in various <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi>Ar</mi><mo>∕</mo><msub><mi mathvariant="normal">O</mi><mn>2</mn></msub></mrow></math> ratio and sputtering gas pressure

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Review on electron stimulated surface chemical reaction mechanism for phosphor degradation

H. C. Swart; J. J. Terblans; E. Coetsee; O. M. Ntwaeaborwa; M. S. Dhlamini; S. Nieuwoudt; P. H. Holloway

J. Vac. Sci. Technol. A 25, 917–921 (2007) https://doi.org/10.1116/1.2539467

Abstract

View articletitled, Review on electron stimulated surface chemical reaction mechanism for phosphor degradation

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Synthesis and characterization of erbia doped metal oxide nanofibers for applications in thermophotovoltaics

E. T. Bender; R. Wang; M. T. Aljarrah; E. A. Evans; R. D. Ramsier

J. Vac. Sci. Technol. A 25, 922–926 (2007) https://doi.org/10.1116/1.2742390

Abstract

View articletitled, Synthesis and characterization of erbia doped metal oxide nanofibers for applications in thermophotovoltaics

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Synthesis and characterization of nanoscale Al–Si–O gradient membranes

V. Trouillet; H. Tröße; M. Bruns; E. Nold; R. G. White

J. Vac. Sci. Technol. A 25, 927–931 (2007) https://doi.org/10.1116/1.2731342

Abstract

View articletitled, Synthesis and characterization of nanoscale Al–Si–O gradient membranes

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Biomaterial Interfaces

Effect of cross-linking ultrahigh molecular weight polyethylene: Surface molecular orientation and wear characteristics

Sharadha Sambasivan; Daniel A. Fischer; Stephen M. Hsu

J. Vac. Sci. Technol. A 25, 932–937 (2007) https://doi.org/10.1116/1.2723767

Abstract

View articletitled, Effect of cross-linking ultrahigh molecular weight polyethylene: Surface molecular orientation and wear characteristics

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Surface characterization of plasma-polymerized cyclohexane thin film

Changrok Choi; Sanghak Yeo; Hyun Kyong Shon; Jeong Won Kim; Dae Won Moon; Donggeun Jung; Tae Geol Lee

J. Vac. Sci. Technol. A 25, 938–942 (2007) https://doi.org/10.1116/1.2743641

Abstract

View articletitled, Surface characterization of plasma-polymerized cyclohexane thin film

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Electronic Materials and Devices

Interface bonding, chemical reactions, and defect formation at metal-semiconductor interfaces

L. J. Brillson

J. Vac. Sci. Technol. A 25, 943–949 (2007) https://doi.org/10.1116/1.2432348

Abstract

View articletitled, Interface bonding, chemical reactions, and defect formation at metal-semiconductor interfaces

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Varying the Schottky barrier of thin film $Mg ∕ H : p - Si (111)$ contacts: Properties and applications

H. Nienhaus; D. Krix; S. Glass

J. Vac. Sci. Technol. A 25, 950–954 (2007) https://doi.org/10.1116/1.2484574

Abstract

View articletitled, Varying the Schottky barrier of thin film <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Mg</mi><mo>∕</mo><mi mathvariant="normal">H</mi><mo>:</mo><mi>p</mi><mtext>-</mtext><mi mathvariant="normal">Si</mi><mrow><mo>(</mo><mn>111</mn><mo>)</mo></mrow></mrow></math> contacts: Properties and applications

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Transparent conducting zinc oxide thin films doped with aluminum and molybdenum

Joel N. Duenow; Timothy A. Gessert; David M. Wood; Teresa M. Barnes; Matthew Young; Bobby To; Timothy J. Coutts

J. Vac. Sci. Technol. A 25, 955–960 (2007) https://doi.org/10.1116/1.2735951

Abstract

View articletitled, Transparent conducting zinc oxide thin films doped with aluminum and molybdenum

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Optimized reactive ion etch process for high performance SiC bipolar junction transistors

A. B. Goulakov; F. Zhao; I. Perez-Wurfl; J. T. Torvik; B. Van Zeghbroeck

J. Vac. Sci. Technol. A 25, 961–966 (2007) https://doi.org/10.1116/1.2436502

Abstract

View articletitled, Optimized reactive ion etch process for high performance SiC bipolar junction transistors

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Carrier concentration and surface electron accumulation in indium nitride layers grown by high pressure chemical vapor deposition

R. P. Bhatta; B. D. Thoms; A. Weerasekera; A. G. U. Perera; M. Alevli; N. Dietz

J. Vac. Sci. Technol. A 25, 967–970 (2007) https://doi.org/10.1116/1.2712185

Abstract

View articletitled, Carrier concentration and surface electron accumulation in indium nitride layers grown by high pressure chemical vapor deposition

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Micro-optical switch device based on semiconductor-to-metallic phase transition characteristics of W-doped $V O_{2}$ smart coatings

M. Soltani; M. Chaker; E. Haddad; R. Kruzelecky; J. Margot

J. Vac. Sci. Technol. A 25, 971–975 (2007) https://doi.org/10.1116/1.2734150

Abstract

View articletitled, Micro-optical switch device based on semiconductor-to-metallic phase transition characteristics of W-doped <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">V</mi><msub><mi mathvariant="normal">O</mi><mn>2</mn></msub></mrow></math> smart coatings

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Implantation damage study in ferromagnetic Mn-implanted Si

C. Awo-Affouda; M. Bolduc; V. P. LaBella

J. Vac. Sci. Technol. A 25, 976–979 (2007) https://doi.org/10.1116/1.2713117

Abstract

View articletitled, Implantation damage study in ferromagnetic Mn-implanted Si

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Effect of additive gases and injection methods on chemical dry etching of silicon nitride, silicon oxynitride, and silicon oxide layers in $F_{2}$ remote plasmas

Y. B. Yun; S. M. Park; D. J. Kim; N.-E. Lee; K. S. Kim; G. H. Bae

J. Vac. Sci. Technol. A 25, 980–985 (2007) https://doi.org/10.1116/1.2723766

Abstract

View articletitled, Effect of additive gases and injection methods on chemical dry etching of silicon nitride, silicon oxynitride, and silicon oxide layers in <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">F</mi><mn>2</mn></msub></math> remote plasmas

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Etch induced sidewall damage evaluation in porous low- $k$ methyl silsesquioxane films

Byungkook Kong; Tom Choi; Stephen Sirard; D. J. Kim; N.-E. Lee

J. Vac. Sci. Technol. A 25, 986–989 (2007) https://doi.org/10.1116/1.2717192

Abstract

View articletitled, Etch induced sidewall damage evaluation in porous low-<math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">k</mi></math> methyl silsesquioxane films

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Effects of additive $C_{4} F_{8}$ during inductively coupled $B {Cl}_{3} ∕ C_{4} F_{8} ∕ Ar$ plasma etching of TaN and $Hf O_{2}$ for gate stack patterning

J. H. Ko; D. Y. Kim; M. S. Park; N.-E. Lee; S. S. Lee; Jinho Ahn; Hyungsoo Mok

J. Vac. Sci. Technol. A 25, 990–995 (2007) https://doi.org/10.1116/1.2747621

Abstract

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Chemical structure of the bilayer $Ag ∕ {Li}_{2} O$ cathode interface in organic light emitting diodes

Min Ho Joo; Min Kyung Baik; Jong Kwon Choi; Kyu Ho Park; Jay Man Lee; Chang Je Sung; Myeong Seop Kim; Joong-Hwan Yang; Sung Tae Kim

J. Vac. Sci. Technol. A 25, 996–998 (2007) https://doi.org/10.1116/1.2748805

Abstract

View articletitled, Chemical structure of the bilayer <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Ag</mi><mo>∕</mo><msub><mi mathvariant="normal">Li</mi><mn>2</mn></msub><mi mathvariant="normal">O</mi></mrow></math> cathode interface in organic light emitting diodes

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Electrical properties of organic light-emitting diodes by indium tin oxide chemical-mechanical polishing process

Gwon-Woo Choi; Yong-Jin Seo; Kang-Yeon Lee; Woo-Sun Lee

J. Vac. Sci. Technol. A 25, 999–1002 (2007) https://doi.org/10.1116/1.2746051

Abstract

View articletitled, Electrical properties of organic light-emitting diodes by indium tin oxide chemical-mechanical polishing process

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MEMS and NEMS

Optimization of biomimetic attachment system contacting with a rough surface

Tae Wan Kim; Bharat Bhushan

J. Vac. Sci. Technol. A 25, 1003–1012 (2007) https://doi.org/10.1116/1.2435389

Abstract

View articletitled, Optimization of biomimetic attachment system contacting with a rough surface

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Manufacturing Science and Technology

Virtual integrated processing for integrated circuit manufacturing

Radek Chalupa; Lei Jiang; Harsono Simka; Sadasivan Shankar; Dipto Thakurta

J. Vac. Sci. Technol. A 25, 1013–1018 (2007) https://doi.org/10.1116/1.2731341

Abstract

View articletitled, Virtual integrated processing for integrated circuit manufacturing

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Electrochemical planarization of copper surfaces with submicron features

R. Chalupa; T. Andryushchenko; J. Han; T. Ghosh; S. Shankar; P. Fischer

J. Vac. Sci. Technol. A 25, 1019–1024 (2007) https://doi.org/10.1116/1.2731340

Abstract

View articletitled, Electrochemical planarization of copper surfaces with submicron features

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Nanomanufacturing

Glass nanoimprint using amorphous Ni–P mold etched by focused-ion beam

Harutaka Mekaru; Takeshi Kitadani; Michiru Yamashita; Masaharu Takahashi

J. Vac. Sci. Technol. A 25, 1025–1028 (2007) https://doi.org/10.1116/1.2734155

Abstract

View articletitled, Glass nanoimprint using amorphous Ni–P mold etched by focused-ion beam

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Annealing effect on structural, morphological, and optical properties of reactive sputtered $W O_{3}$ films for mediated heterogeneous photocatalyst

K. Prabakar; T. Takahashi; K. Takahashi; T. Nezuka; T. Nakashima; Y. Kubota; A. Fujishima

J. Vac. Sci. Technol. A 25, 1029–1033 (2007) https://doi.org/10.1116/1.2721583

Abstract

View articletitled, Annealing effect on structural, morphological, and optical properties of reactive sputtered <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">W</mi><msub><mi mathvariant="normal">O</mi><mn>3</mn></msub></mrow></math> films for mediated heterogeneous photocatalyst

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Nanometer Structures

Controlled chemical mechanical polishing of polysilicon and silicon dioxide for single-electron device

Vishwanath Joshi; Alexei O. Orlov; Gregory L. Snider

J. Vac. Sci. Technol. A 25, 1034–1037 (2007) https://doi.org/10.1116/1.2433986

Abstract

View articletitled, Controlled chemical mechanical polishing of polysilicon and silicon dioxide for single-electron device

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Synthesis of ${In}_{2} O_{3}$ nanocrystal chains and annealing effect on their optical properties

T. S. Ko; C. P. Chu; J. R. Chen; Y. A. Chang; T. C. Lu; H. C. Kuo; S. C. Wang

J. Vac. Sci. Technol. A 25, 1038–1041 (2007) https://doi.org/10.1116/1.2710244

Abstract

View articletitled, Synthesis of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi mathvariant="normal">In</mi><mn>2</mn></msub><msub><mi mathvariant="normal">O</mi><mn>3</mn></msub></mrow></math> nanocrystal chains and annealing effect on their optical properties

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Topographical studies of nanoscale secondary structure of electrochemical anodized aluminum surface

H. Kato; T. Sugiyama; S. Takemura; Y. Watanabe; Y. Takarai; A. Ishii; S. Kimura; T. Okumura; D. Kobayakawa; T. Hiramatsu; N. Nanba; O. Nishikawa; M. Taniguchi

J. Vac. Sci. Technol. A 25, 1042–1047 (2007) https://doi.org/10.1116/1.2747619

Abstract

View articletitled, Topographical studies of nanoscale secondary structure of electrochemical anodized aluminum surface

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Nanometer-Scale Science and Technology II

Tuning metal surface diffusion on diblock copolymer films

S. B. Darling; Axel Hoffmann

J. Vac. Sci. Technol. A 25, 1048–1051 (2007) https://doi.org/10.1116/1.2748806

Abstract

View articletitled, Tuning metal surface diffusion on diblock copolymer films

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Plasma Science and Technology I

Room temperature crystallization of indium tin oxide films on glass and polyethylene terephthalate substrates using rf plasma

H. Ohsaki; M. Suzuki; Y. Shibayama; A. Kinbara; T. Watanabe

J. Vac. Sci. Technol. A 25, 1052–1055 (2007) https://doi.org/10.1116/1.2748807

Abstract

View articletitled, Room temperature crystallization of indium tin oxide films on glass and polyethylene terephthalate substrates using rf plasma

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Low energy $N_{2}$ ion bombardment for removal of ${(Hf O_{2})}_{x} {(Si O N)}_{1 - x}$ in dilute HF

Wan Sik Hwang; Byung-Jin Cho; Daniel S. H. Chan; Won Jong Yoo

J. Vac. Sci. Technol. A 25, 1056–1061 (2007) https://doi.org/10.1116/1.2731339

Abstract

View articletitled, Low energy <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">N</mi><mn>2</mn></msub></math> ion bombardment for removal of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mrow><mo>(</mo><mi mathvariant="normal">Hf</mi><msub><mi mathvariant="normal">O</mi><mn>2</mn></msub><mo>)</mo></mrow><mi>x</mi></msub></mrow><msub xmlns=""><mrow><mo>(</mo><mi mathvariant="normal">Si</mi><mi mathvariant="normal">O</mi><mi mathvariant="normal">N</mi><mo>)</mo></mrow><mrow><mn>1</mn><mo>−</mo><mi>x</mi></mrow></msub></math> in dilute HF

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Control of atomic layer degradation on Si substrate

Y. Nakamura; T. Tatsumi; S. Kobayashi; K. Kugimiya; T. Harano; A. Ando; T. Kawase; S. Hamaguchi; S. Iseda

J. Vac. Sci. Technol. A 25, 1062–1067 (2007) https://doi.org/10.1116/1.2713114

Abstract

View articletitled, Control of atomic layer degradation on Si substrate

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Plasma Science and Technology II

Impact of plasma damage on cobalt silicidation

T. Kimura; K. Kugimiya; T. Ohchi; K. Fuke; T. Kataoka; T. Tatsumi; Y. Kamide

J. Vac. Sci. Technol. A 25, 1068–1072 (2007) https://doi.org/10.1116/1.2739551

Abstract

View articletitled, Impact of plasma damage on cobalt silicidation

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Formation of silicon nitride nanopillars in dual-frequency capacitively coupled plasma and their application to Si nanopillar etching

C. K. Park; H. T. Kim; D. Y. Kim; N.-E. Lee

J. Vac. Sci. Technol. A 25, 1073–1077 (2007) https://doi.org/10.1116/1.2713116

Abstract

View articletitled, Formation of silicon nitride nanopillars in dual-frequency capacitively coupled plasma and their application to Si nanopillar etching

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Study of $Si O_{x} N_{y}$ as a bottom antireflective coating and its pattern transferring capability

X. Peng; Z. Wang; D. Dimitrov; T. Boonstra; S. Xue

J. Vac. Sci. Technol. A 25, 1078–1083 (2007) https://doi.org/10.1116/1.2742389

Abstract

View articletitled, Study of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Si</mi><msub><mi mathvariant="normal">O</mi><mi>x</mi></msub><msub><mi mathvariant="normal">N</mi><mi>y</mi></msub></mrow></math> as a bottom antireflective coating and its pattern transferring capability

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Plasma Science and Technology III

Chemical modification of the poly(vinylidene fluoride-trifluoroethylene) copolymer surface through fluorocarbon ion beam deposition

Wen-Dung Hsu; Inkook Jang; Susan B. Sinnott

J. Vac. Sci. Technol. A 25, 1084–1092 (2007) https://doi.org/10.1116/1.2721572

Abstract

View articletitled, Chemical modification of the poly(vinylidene fluoride-trifluoroethylene) copolymer surface through fluorocarbon ion beam deposition

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Characterization of thin-film deposition in a pulsed acrylic acid polymerizing discharge

Sergey A. Voronin; James W. Bradley; Catalin Fotea; Mischa Zelzer; Morgan R. Alexander

J. Vac. Sci. Technol. A 25, 1093–1097 (2007) https://doi.org/10.1116/1.2712186

Abstract

View articletitled, Characterization of thin-film deposition in a pulsed acrylic acid polymerizing discharge

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Surface Engineering

Morphological evolution of Al whiskers grown by high temperature glancing angle deposition

Motofumi Suzuki; Koji Nagai; Sadamu Kinoshita; Kaoru Nakajima; Kenji Kimura; Tomoki Okano; Kaoru Sasakawa

J. Vac. Sci. Technol. A 25, 1098–1102 (2007) https://doi.org/10.1116/1.2739549

Abstract

View articletitled, Morphological evolution of Al whiskers grown by high temperature glancing angle deposition

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Ti–Al–Si–N films for superhard coatings deposited by reactive cosputtering using Ti, Al, and Si targets

A. Miyamura; M. Yamaguchi; K. Hattori; Y. Sato; S. Nakamura; Y. Shigesato

J. Vac. Sci. Technol. A 25, 1103–1107 (2007) https://doi.org/10.1116/1.2721577

Abstract

View articletitled, Ti–Al–Si–N films for superhard coatings deposited by reactive cosputtering using Ti, Al, and Si targets

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Plasma polymerized thin films of maleic anhydride and 1,2-methylenedioxybenzene for improving adhesion to carbon surfaces

Joanna Drews; Stergios Goutianos; Peter Kingshott; Søren Hvilsted; Noemi Rozlosnik; Kristoffer Almdal; Bent F. Sørensen

J. Vac. Sci. Technol. A 25, 1108–1117 (2007) https://doi.org/10.1116/1.2743633

Abstract

View articletitled, Plasma polymerized thin films of maleic anhydride and 1,2-methylenedioxybenzene for improving adhesion to carbon surfaces

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Surface Engineering I

Fabrication of structurally chiral ${Sc}_{2} O_{3}$ films and observation of Bragg resonance at deep UV wavelengths

Lakshman De Silva; Ian Hodgkinson

J. Vac. Sci. Technol. A 25, 1118–1122 (2007) https://doi.org/10.1116/1.2432347

Abstract

View articletitled, Fabrication of structurally chiral <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi mathvariant="normal">Sc</mi><mn>2</mn></msub><msub><mi mathvariant="normal">O</mi><mn>3</mn></msub></mrow></math> films and observation of Bragg resonance at deep UV wavelengths

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Surface Science

Multiply charged Al recoils with impact of $2.0 keV$ ${Si}^{+}$ ions

X. Chen; Z. Sroubek; J. A. Yarmoff

J. Vac. Sci. Technol. A 25, 1123–1127 (2007) https://doi.org/10.1116/1.2723762

Abstract

View articletitled, Multiply charged Al recoils with impact of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mn>2.0</mn><mspace width="0.3em"></mspace><mi>keV</mi></mrow></math> <math xmlns="http://www.w3.org/1998/Math/MathML"><msup xmlns=""><mi mathvariant="normal">Si</mi><mo>+</mo></msup></math> ions

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Characterization of orientation-selective-epitaxial $Ce O_{2}$ layers on Si(100) substrates by x-ray diffraction and cross-sectional transmission electron microscopy

Tomoyasu Inoue; Yoshiyuki Nakata; Shigenari Shida; Kazuhiro Kato

J. Vac. Sci. Technol. A 25, 1128–1132 (2007) https://doi.org/10.1116/1.2435386

Abstract

View articletitled, Characterization of orientation-selective-epitaxial <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Ce</mi><msub><mi mathvariant="normal">O</mi><mn>2</mn></msub></mrow></math> layers on Si(100) substrates by x-ray diffraction and cross-sectional transmission electron microscopy

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K ion scattering from Au nanoclusters on $Ti O_{2} (110)$

G. F. Liu; P. Karmakar; J. A. Yarmoff

J. Vac. Sci. Technol. A 25, 1133–1136 (2007) https://doi.org/10.1116/1.2723764

Abstract

View articletitled, K ion scattering from Au nanoclusters on <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Ti</mi><msub><mi mathvariant="normal">O</mi><mn>2</mn></msub><mrow><mo>(</mo><mn>110</mn><mo>)</mo></mrow></mrow></math>

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Surface modification of SKD-61 steel by ion implantation technique

F. L. Wen; Y.-L. Lo; Y.-C. Yu

J. Vac. Sci. Technol. A 25, 1137–1142 (2007) https://doi.org/10.1116/1.2747625

Abstract

View articletitled, Surface modification of SKD-61 steel by ion implantation technique

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Reaction properties of NO and CO over an Ir(211) surface

I. Nakamura; K. Suzuki; A. Takahashi; M. Haneda; H. Hamada; T. Fujitani

J. Vac. Sci. Technol. A 25, 1143–1146 (2007) https://doi.org/10.1116/1.2721576

Abstract

View articletitled, Reaction properties of NO and CO over an Ir(211) surface

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X-ray photoemission spectroscopy and Fourier transform infrared studies of electrochemical doping of copper phthalocyanine molecule in conducting polymer

H. Kato; S. Takemura; Y. Watanabe; A. Ishii; I. Tsuchida; Y. Akai; T. Sugiyama; T. Hiramatsu; N. Nanba; O. Nishikawa; M. Taniguchi

J. Vac. Sci. Technol. A 25, 1147–1151 (2007) https://doi.org/10.1116/1.2731347

Abstract

View articletitled, X-ray photoemission spectroscopy and Fourier transform infrared studies of electrochemical doping of copper phthalocyanine molecule in conducting polymer

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Cathodoluminescence degradation of $Si O_{2} : Ce, Tb$ powder phosphors prepared by a sol-gel process

O. M. Ntwaeaborwa; H. C. Swart; R. E. Kroon; J. R. Botha; P. H. Holloway

J. Vac. Sci. Technol. A 25, 1152–1155 (2007) https://doi.org/10.1116/1.2723771

Abstract

View articletitled, Cathodoluminescence degradation of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Si</mi><msub><mi mathvariant="normal">O</mi><mn>2</mn></msub><mo>:</mo><mi mathvariant="normal">Ce</mi><mo>,</mo><mi mathvariant="normal">Tb</mi></mrow></math> powder phosphors prepared by a sol-gel process

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Chemical interaction of H and D atoms with $Ag ∕ H : p - Si (111)$ thin film diodes

David Krix; Ramona Nünthel; Hermann Nienhaus

J. Vac. Sci. Technol. A 25, 1156–1160 (2007) https://doi.org/10.1116/1.2404966

Abstract

View articletitled, Chemical interaction of H and D atoms with <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Ag</mi><mo>∕</mo><mi mathvariant="normal">H</mi><mo>:</mo><mi>p</mi><mtext>-</mtext><mi mathvariant="normal">Si</mi><mrow><mo>(</mo><mn>111</mn><mo>)</mo></mrow></mrow></math> thin film diodes

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Thin Films

Gate dielectric development for flexible electronics

P. C. Joshi; A. T. Voutsas; J. W. Hartzell

J. Vac. Sci. Technol. A 25, 1161–1165 (2007) https://doi.org/10.1116/1.2723765

Abstract

View articletitled, Gate dielectric development for flexible electronics

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Structure and chemical properties of molybdenum oxide thin films

C. V. Ramana; V. V. Atuchin; L. D. Pokrovsky; U. Becker; C. M. Julien

J. Vac. Sci. Technol. A 25, 1166–1171 (2007) https://doi.org/10.1116/1.2747628

Abstract

View articletitled, Structure and chemical properties of molybdenum oxide thin films

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Transparent conducting Al-doped ZnO thin films prepared by magnetron sputtering with dc and rf powers applied in combination

Tadatsugu Minami; Yuusuke Ohtani; Toshihiro Miyata; Takeshi Kuboi

J. Vac. Sci. Technol. A 25, 1172–1177 (2007) https://doi.org/10.1116/1.2748809

Abstract

View articletitled, Transparent conducting Al-doped ZnO thin films prepared by magnetron sputtering with dc and rf powers applied in combination

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Effect of electrical properties on thermal diffusivity of amorphous indium zinc oxide films

T. Ashida; A. Miyamura; Y. Sato; T. Yagi; N. Taketoshi; T. Baba; Y. Shigesato

J. Vac. Sci. Technol. A 25, 1178–1183 (2007) https://doi.org/10.1116/1.2743644

Abstract

View articletitled, Effect of electrical properties on thermal diffusivity of amorphous indium zinc oxide films

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Anisotropic microstructure of physical vapor deposited coatings caused by anisotropy in flux distribution of arriving atoms

S. Yu. Grachev; J.-D. Kamminga; G. C. A. M. Janssen; T. Smy; F. D. Tichelaar

J. Vac. Sci. Technol. A 25, 1184–1187 (2007) https://doi.org/10.1116/1.2723772

Abstract

View articletitled, Anisotropic microstructure of physical vapor deposited coatings caused by anisotropy in flux distribution of arriving atoms

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Preparation and photocatalytic activity of $Ti O_{x} N_{y} ∕ Cd S$ heterojunctions

K. Prabakar; T. Takahashi; T. Nezuka; K. Takahashi; T. Nakashima; Y. Kubota; A. Fujishima

J. Vac. Sci. Technol. A 25, 1188–1192 (2007) https://doi.org/10.1116/1.2746050

Abstract

View articletitled, Preparation and photocatalytic activity of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Ti</mi><msub><mi mathvariant="normal">O</mi><mi>x</mi></msub><msub><mi mathvariant="normal">N</mi><mi>y</mi></msub><mo>∕</mo><mi mathvariant="normal">Cd</mi><mi mathvariant="normal">S</mi></mrow></math> heterojunctions

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Preparation of transparent conducting B-doped ZnO films by vacuum arc plasma evaporation

Toshihiro Miyata; Yasunori Honma; Tadatsugu Minami

J. Vac. Sci. Technol. A 25, 1193–1197 (2007) https://doi.org/10.1116/1.2484424

Abstract

View articletitled, Preparation of transparent conducting B-doped ZnO films by vacuum arc plasma evaporation

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Optimization of the microcrystalline silicon deposition efficiency

B. Strahm; A. A. Howling; L. Sansonnens; Ch. Hollenstein

J. Vac. Sci. Technol. A 25, 1198–1202 (2007) https://doi.org/10.1116/1.2433985

Abstract

View articletitled, Optimization of the microcrystalline silicon deposition efficiency

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B-doped Be coatings for NIF target development

H. Xu; K. A. Moreno; K. P. Youngblood; A. Nikroo; R. E. Hackenberg; J. C. Cooley; C. S. Alford; S. A. Letts

J. Vac. Sci. Technol. A 25, 1203–1207 (2007) https://doi.org/10.1116/1.2747622

Abstract

View articletitled, B-doped Be coatings for NIF target development

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Growth and electrochemical properties of Li–Ni–Co–Al oxide films

C. V. Ramana; K. Zaghib; C. M. Julien

J. Vac. Sci. Technol. A 25, 1208–1213 (2007) https://doi.org/10.1116/1.2721582

Abstract

View articletitled, Growth and electrochemical properties of Li–Ni–Co–Al oxide films

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Tilted fiber texture in aluminum nitride thin films

D. Deniz; J. M. E. Harper; J. W. Hoehn; F. Chen

J. Vac. Sci. Technol. A 25, 1214–1218 (2007) https://doi.org/10.1116/1.2712190

Abstract

View articletitled, Tilted fiber texture in aluminum nitride thin films

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Surface modification of porous nanocrystalline $Ti O_{2}$ films for dye-sensitized solar cell application by various gas plasmas

Youngsoo Kim; Chang-Ho Yoon; Kang-Jin Kim; Yeonhee Lee

J. Vac. Sci. Technol. A 25, 1219–1225 (2007) https://doi.org/10.1116/1.2742392

Abstract

View articletitled, Surface modification of porous nanocrystalline <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Ti</mi><msub><mi mathvariant="normal">O</mi><mn>2</mn></msub></mrow></math> films for dye-sensitized solar cell application by various gas plasmas

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Thin Films II

Cathodoluminescence degradation of $Y_{2} Si O_{5} : Ce$ thin films

E. Coetsee; H. C. Swart; J. J. Terblans

J. Vac. Sci. Technol. A 25, 1226–1230 (2007) https://doi.org/10.1116/1.2429676

Abstract

View articletitled, Cathodoluminescence degradation of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi mathvariant="normal">Y</mi><mn>2</mn></msub><mi mathvariant="normal">Si</mi><msub><mi mathvariant="normal">O</mi><mn>5</mn></msub><mo>:</mo><mi mathvariant="normal">Ce</mi></mrow></math> thin films

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Ultra-Bright Light Sources

Soft-x-ray spectroscopy experiment of liquids

Jinghua Guo; Tyler Tong; Lukas Svec; John Go; Chungli Dong; Jau-Wern Chiou

J. Vac. Sci. Technol. A 25, 1231–1233 (2007) https://doi.org/10.1116/1.2747620

Abstract

View articletitled, Soft-x-ray spectroscopy experiment of liquids

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Vacuum Technology

Use of getter-catalyst thin films for enhancing ion pump vacuum performances

M. Mura; C. Paolini

J. Vac. Sci. Technol. A 25, 1234–1239 (2007) https://doi.org/10.1116/1.2731348

Abstract

View articletitled, Use of getter-catalyst thin films for enhancing ion pump vacuum performances

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Sensitivity factor of the axial-symmetric transmission gauge: Deviation and long-term variation

N. Takahashi; Y. Tuzi; I. Arakawa

J. Vac. Sci. Technol. A 25, 1240–1245 (2007) https://doi.org/10.1116/1.2715956

Abstract

View articletitled, Sensitivity factor of the axial-symmetric transmission gauge: Deviation and long-term variation

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Quartz friction gauge for monitoring the concentration and viscosity of NaturalHy mixtures

Yohei Kobayashi; Akira Kurokawa; Masaru Hirata

J. Vac. Sci. Technol. A 25, 1246–1250 (2007) https://doi.org/10.1116/1.2747626

Abstract

View articletitled, Quartz friction gauge for monitoring the concentration and viscosity of NaturalHy mixtures

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Photon stimulated desorption from copper and aluminum chambers

J. Gómez-Goñi

J. Vac. Sci. Technol. A 25, 1251–1255 (2007) https://doi.org/10.1116/1.2712187

Abstract

View articletitled, Photon stimulated desorption from copper and aluminum chambers

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Benjamin Franklin and electrophotography

L. B. Schein

J. Vac. Sci. Technol. A 25, 1256–1260 (2007) https://doi.org/10.1116/1.2715957

Abstract

View articletitled, Benjamin Franklin and electrophotography

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Electronic Materials and Devices/Thin Films

Process-dependent electronic states at Mo/hafnium oxide/Si interfaces

S. Walsh; L. Fang; J. K. Schaeffer; L. J. Brillson

J. Vac. Sci. Technol. A 25, 1261–1266 (2007) https://doi.org/10.1116/1.2721573

Abstract

View articletitled, Process-dependent electronic states at Mo/hafnium oxide/Si interfaces

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MEMS and NEMS/Biomaterial Interfaces

Velocity dependence and rest time effect on nanoscale friction of ultrathin films at high sliding velocities

Zhenhua Tao; Bharat Bhushan

J. Vac. Sci. Technol. A 25, 1267–1274 (2007) https://doi.org/10.1116/1.2435381

Abstract

View articletitled, Velocity dependence and rest time effect on nanoscale friction of ultrathin films at high sliding velocities

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Adhesion properties of polymer/silicon interfaces for biological micro-/nanoelectromechanical systems applications

Manuel Palacio; Bharat Bhushan; Nicholas Ferrell; Derek Hansford

J. Vac. Sci. Technol. A 25, 1275–1284 (2007) https://doi.org/10.1116/1.2435390

Abstract

View articletitled, Adhesion properties of polymer/silicon interfaces for biological micro-/nanoelectromechanical systems applications

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Nanotribological characterization of vapor phase deposited fluorosilane self-assembled monolayers deposited on polydimethylsiloxane surfaces for biomedical micro-/nanodevices

Bharat Bhushan; Michal Cichomski

J. Vac. Sci. Technol. A 25, 1285–1293 (2007) https://doi.org/10.1116/1.2426979

Abstract

View articletitled, Nanotribological characterization of vapor phase deposited fluorosilane self-assembled monolayers deposited on polydimethylsiloxane surfaces for biomedical micro-/nanodevices

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Nanometer Structures/Nanomanufacturing

Patterning of high density magnetic nanodot arrays by nanoimprint lithography

Wei Hu; Robert J. Wilson; Liang Xu; Shu-Jen Han; Shan X. Wang

J. Vac. Sci. Technol. A 25, 1294–1297 (2007) https://doi.org/10.1116/1.2484497

Abstract

View articletitled, Patterning of high density magnetic nanodot arrays by nanoimprint lithography

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Plasma Science and Technology II/Thin Films

Optimizing the dielectric performance of $Ti O_{2}$ thin films through control of plasma-enhanced chemical vapor deposition process conditions

Wenli Yang; Alexander Monson; Joseph Marino; Colin A. Wolden

J. Vac. Sci. Technol. A 25, 1298–1301 (2007) https://doi.org/10.1116/1.2484649

Abstract

View articletitled, Optimizing the dielectric performance of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Ti</mi><msub><mi mathvariant="normal">O</mi><mn>2</mn></msub></mrow></math> thin films through control of plasma-enhanced chemical vapor deposition process conditions

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Thin Films/Surface Science

Atomic layer deposition of hafnium silicate gate dielectric layers

Annelies Delabie; Geoffrey Pourtois; Matty Caymax; Stefan De Gendt; Lars-Åke Ragnarsson; Marc Heyns; Yanina Fedorenko; Johan Swerts; Jan Willem Maes

J. Vac. Sci. Technol. A 25, 1302–1308 (2007) https://doi.org/10.1116/1.2713115

Abstract

View articletitled, Atomic layer deposition of hafnium silicate gate dielectric layers

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Vacuum Science/Applied Surface Science

Reducing SS $304 ∕ 316$ hydrogen outgassing to $2 \times 10^{- 15} torr l ∕ {cm}^{2} s$

Y. Tito Sasaki

J. Vac. Sci. Technol. A 25, 1309–1311 (2007) https://doi.org/10.1116/1.2734151

Abstract

View articletitled, Reducing SS <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mn>304</mn><mo>∕</mo><mn>316</mn></mrow></math> hydrogen outgassing to <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mn>2</mn><mo>×</mo><msup><mn>10</mn><mrow><mo>−</mo><mn>15</mn></mrow></msup><mspace width="0.3em"></mspace><mtext>torr</mtext><mspace width="0.2em"></mspace><mi mathvariant="normal">l</mi><mo>∕</mo><msup><mi>cm</mi><mn>2</mn></msup><mspace width="0.2em"></mspace><mi mathvariant="normal">s</mi></mrow></math>

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