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Volume 25, Issue 1

January 2007

All Issues

ISSN 0734-2101

EISSN 1520-8559

In this Issue

Review Article
Articles
Letters

Review Article

Module to guide the expert use of x-ray photoelectron spectroscopy by corrosion scientists

J. E. Castle

J. Vac. Sci. Technol. A 25, 1–27 (2007) https://doi.org/10.1116/1.2406058

Abstract

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Articles

Mechanisms of structural evolutions associated with the high current pulsed electron beam treatment of a NiTi shape memory alloy

K. M. Zhang; J. X. Zou; T. Grosdidier; N. Gey; S. Weber; D. Z. Yang; C. Dong

J. Vac. Sci. Technol. A 25, 28–36 (2007) https://doi.org/10.1116/1.2388951

Abstract

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Epitaxial ${(Sr Ti O_{3} ∕ Ni O)}_{n} ∕ Mg O$ multiferroic heterostructure

S. D. Kirby; M. Polking; R. B. van Dover

J. Vac. Sci. Technol. A 25, 37–41 (2007) https://doi.org/10.1116/1.2388952

Abstract

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High-power pulsed sputtering using a magnetron with enhanced plasma confinement

Jaroslav Vlček; Pavel Kudláček; Kristýna Burcalová; Jindřich Musil

J. Vac. Sci. Technol. A 25, 42–47 (2007) https://doi.org/10.1116/1.2388954

Abstract

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Phase-change characteristics of chalcogenide ${Ge}_{1} {Se}_{1} {Te}_{2}$ thin films for use in nonvolatile memories

Hong-Bay Chung; Kyung Shin; Jae-Min Lee

J. Vac. Sci. Technol. A 25, 48–53 (2007) https://doi.org/10.1116/1.2388956

Abstract

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Inertial interlock bonding: A new approach to sputtering target construction

C. E. Wickersham, Jr.; David Workman

J. Vac. Sci. Technol. A 25, 54–60 (2007) https://doi.org/10.1116/1.2388957

Abstract

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Phosphor coatings to enhance Si photovoltaic cell performance

Philip Chung; Hsiu-hsin Chung; Paul H. Holloway

J. Vac. Sci. Technol. A 25, 61–66 (2007) https://doi.org/10.1116/1.2393298

Abstract

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Rotary reactor for atomic layer deposition on large quantities of nanoparticles

J. A. McCormick; B. L. Cloutier; A. W. Weimer; S. M. George

J. Vac. Sci. Technol. A 25, 67–74 (2007) https://doi.org/10.1116/1.2393299

Abstract

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Quantitative detection of tiny amounts of helium isotopes in a hydrogen isotope atmosphere using a standard-resolution quadrupole mass spectrometer

A. Frattolillo; A. De Ninno; A. Rizzo

J. Vac. Sci. Technol. A 25, 75–89 (2007) https://doi.org/10.1116/1.2395948

Abstract

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Long pulse pumping behavior of a cryopump for the neutral beam injector

Ch. Chakrapani; S. K. Sharma; A. K. Chakraborty; M. J. Singh; G. B. Patel; S. Rambabu; B. Prajapati; J. Upadhyay; S. K. Mattoo

J. Vac. Sci. Technol. A 25, 90–95 (2007) https://doi.org/10.1116/1.2400677

Abstract

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Penetration of fluorine into the silicon lattice during exposure to F atoms, $F_{2}$ ⁠, and $Xe F_{2}$ ⁠: Implications for spontaneous etching reactions

Harold F. Winters; D. B. Graves; D. Humbird; Sven Tougaard

J. Vac. Sci. Technol. A 25, 96–103 (2007) https://doi.org/10.1116/1.2400680

Abstract

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Development of a method for investigating carbon removal processes during photoassisted film growth using organometallic precursors: Application to platinum

John J. Cahill; Valentin G. Panayotov; Kenneth A. Cowen; Ernest Harris; Lynn V. Koplitz; Kurt Birdwhistell; Brent Koplitz

J. Vac. Sci. Technol. A 25, 104–109 (2007) https://doi.org/10.1116/1.2400681

Abstract

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Corrosion behavior of Zr modified CrN coatings using metal vapor vacuum arc ion implantation

K. P. Purushotham; L. P. Ward; N. Brack; P. J. Pigram; P. Evans; H. Noorman; R. R. Manory

J. Vac. Sci. Technol. A 25, 110–116 (2007) https://doi.org/10.1116/1.2400682

Abstract

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Influence of the deposition parameters on the electronic and structural properties of pulsed laser ablation prepared ${Si}_{1 - x} C_{x}$ thin films

F. Neri; F. Barreca; E. Fazio; E. Barletta; G. Mondio; S. Trusso; B. Brendebach; H. Modrow

J. Vac. Sci. Technol. A 25, 117–125 (2007) https://doi.org/10.1116/1.2400685

Abstract

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Modeling of the chemically assisted ion beam etching process: Application to the GaAs etching by ${Cl}_{2} ∕ {Ar}^{+}$

L. Elmonser; A. Rhallabi; M. Gaillard; J. P. Landesman; Anne Talneau; F. Pommereau; N. Bouadma

J. Vac. Sci. Technol. A 25, 126–133 (2007) https://doi.org/10.1116/1.2400689

Abstract

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Characterization of neutral beam source based on pulsed inductively coupled discharge: Time evolution of ion fluxes entering neutralizer

Sergey N. Abolmasov; Takuya Ozaki; Seiji Samukawa

J. Vac. Sci. Technol. A 25, 134–140 (2007) https://doi.org/10.1116/1.2402154

Abstract

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Initial nucleation and growth of atomic layer deposited $Hf O_{2}$ gate dielectric layers on Si surfaces with the various surface conditions using in situ medium energy ion scattering analysis

K. B. Chung; C. N. Whang; H. S. Chang; D. W. Moon; M.-H. Cho

J. Vac. Sci. Technol. A 25, 141–147 (2007) https://doi.org/10.1116/1.2402155

Abstract

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Properties of $Sr {Bi}_{2} {Ta}_{0.8} {Nb}_{1.2} O_{9}$ thin films deposited by plasma-assisted pulsed-laser deposition

Pingxiong Yang; Hongmei Deng; Meirong Shi; Ziyang Tong

J. Vac. Sci. Technol. A 25, 148–152 (2007) https://doi.org/10.1116/1.2404687

Abstract

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Synthesis and characterization of inorganic silicon oxycarbide glass thin films by reactive rf-magnetron sputtering

Joseph V. Ryan; C. G. Pantano

J. Vac. Sci. Technol. A 25, 153–159 (2007) https://doi.org/10.1116/1.2404688

Abstract

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Power-law scaling during shadowing growth of nanocolumns by oblique angle deposition

F. Tang; T. Karabacak; L. Li; M. Pelliccione; G.-C. Wang; T.-M. Lu

J. Vac. Sci. Technol. A 25, 160–166 (2007) https://doi.org/10.1116/1.2406059

Abstract

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Recommended practice for process sampling for partial pressure analysis

James E. Blessing; Robert E. Ellefson; Bruce A. Raby; Gerardo A. Brucker; Robert K. Waits

J. Vac. Sci. Technol. A 25, 167–186 (2007) https://doi.org/10.1116/1.2364001

Abstract

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Numerical and experimental comparative study of metal-organic chemical vapor deposition of ZnO

S. M. Liu; S. L. Gu; S. M. Zhu; J. D. Ye; W. Liu; R. Zhang; Y. D. Zheng

J. Vac. Sci. Technol. A 25, 187–190 (2007) https://doi.org/10.1116/1.2409937

Abstract

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Effect of chemical bonds on the properties of SiN in thin film transistor liquid crystal display

Zhenyu Xie; Chunping Long; Chao Yong Deng; Seung Moo Rim

J. Vac. Sci. Technol. A 25, 191–199 (2007) https://doi.org/10.1116/1.2409938

Abstract

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In situ spectroscopic ellipsometry analyses of hafnium diboride thin films deposited by single-source chemical vapor deposition

Yu Yang; Sreenivas Jayaraman; Brent Sperling; Do Young Kim; Gregory S. Girolami; John R. Abelson

J. Vac. Sci. Technol. A 25, 200–206 (2007) https://doi.org/10.1116/1.2409939

Abstract

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Letters

Fabrication of layered self-standing diamond film by dc arc plasma jet chemical vapor deposition

G. C. Chen; F. W. Dai; B. Li; H. Lan; J. Askari; W. Z. Tang; F. X. Lu

J. Vac. Sci. Technol. A 25, L1–L3 (2007) https://doi.org/10.1116/1.2409940

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Review Article

Module to guide the expert use of x-ray photoelectron spectroscopy by corrosion scientists

Articles

Mechanisms of structural evolutions associated with the high current pulsed electron beam treatment of a NiTi shape memory alloy

Epitaxial ${(Sr Ti O_{3} ∕ Ni O)}_{n} ∕ Mg O$ multiferroic heterostructure

High-power pulsed sputtering using a magnetron with enhanced plasma confinement

Phase-change characteristics of chalcogenide ${Ge}_{1} {Se}_{1} {Te}_{2}$ thin films for use in nonvolatile memories

Inertial interlock bonding: A new approach to sputtering target construction

Phosphor coatings to enhance Si photovoltaic cell performance

Rotary reactor for atomic layer deposition on large quantities of nanoparticles

Quantitative detection of tiny amounts of helium isotopes in a hydrogen isotope atmosphere using a standard-resolution quadrupole mass spectrometer

Long pulse pumping behavior of a cryopump for the neutral beam injector

Penetration of fluorine into the silicon lattice during exposure to F atoms, $F_{2}$ ⁠, and $Xe F_{2}$ ⁠: Implications for spontaneous etching reactions

Development of a method for investigating carbon removal processes during photoassisted film growth using organometallic precursors: Application to platinum

Corrosion behavior of Zr modified CrN coatings using metal vapor vacuum arc ion implantation

Influence of the deposition parameters on the electronic and structural properties of pulsed laser ablation prepared ${Si}_{1 - x} C_{x}$ thin films

Modeling of the chemically assisted ion beam etching process: Application to the GaAs etching by ${Cl}_{2} ∕ {Ar}^{+}$

Characterization of neutral beam source based on pulsed inductively coupled discharge: Time evolution of ion fluxes entering neutralizer

Initial nucleation and growth of atomic layer deposited $Hf O_{2}$ gate dielectric layers on Si surfaces with the various surface conditions using in situ medium energy ion scattering analysis

Properties of $Sr {Bi}_{2} {Ta}_{0.8} {Nb}_{1.2} O_{9}$ thin films deposited by plasma-assisted pulsed-laser deposition

Synthesis and characterization of inorganic silicon oxycarbide glass thin films by reactive rf-magnetron sputtering

Power-law scaling during shadowing growth of nanocolumns by oblique angle deposition

Recommended practice for process sampling for partial pressure analysis

Numerical and experimental comparative study of metal-organic chemical vapor deposition of ZnO

Effect of chemical bonds on the properties of SiN in thin film transistor liquid crystal display

In situ spectroscopic ellipsometry analyses of hafnium diboride thin films deposited by single-source chemical vapor deposition

Letters

Fabrication of layered self-standing diamond film by dc arc plasma jet chemical vapor deposition

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