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Analysis of unstable species in cyclo- $C_{4} F_{8}$ plasma by ion attachment mass spectrometry

Megumi Nakamura; Yoshiki Hirano; Yoshiro Shiokawa; Masao Takayanagi; Munetaka Nakata

J. Vac. Sci. Technol. A 24, 385–389 (2006) https://doi.org/10.1116/1.2177228

View articletitled, Analysis of unstable species in cyclo-<math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi mathvariant="normal">C</mi><mn>4</mn></msub><msub><mi mathvariant="normal">F</mi><mn>8</mn></msub></mrow></math> plasma by ion attachment mass spectrometry

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Characterization of facing-target reactive sputtered polycrystalline ${Fe}_{3} O_{4}$ films

J. J. Shen; W. B. Mi; Z. Q. Li; P. Wu; E. Y. Jiang; H. L. Bai

J. Vac. Sci. Technol. A 24, 390–395 (2006) https://doi.org/10.1116/1.2183226

Abstract

View articletitled, Characterization of facing-target reactive sputtered polycrystalline <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi mathvariant="normal">Fe</mi><mn>3</mn></msub><msub><mi mathvariant="normal">O</mi><mn>4</mn></msub></mrow></math> films

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Electron inelastic mean free path and dielectric properties of $a$ -boron, $a$ -carbon, and their nitrides as determined by quantitative analysis of reflection electron energy loss spectroscopy

P. Prieto; C. Quirós; E. Elizalde; J. M. Sanz

J. Vac. Sci. Technol. A 24, 396–407 (2006) https://doi.org/10.1116/1.2183249

Abstract

View articletitled, Electron inelastic mean free path and dielectric properties of <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">a</mi></math>-boron, <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">a</mi></math>-carbon, and their nitrides as determined by quantitative analysis of reflection electron energy loss spectroscopy

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Effects of Pt addition on the formation of Co–ITO granular magnetoresistance films by a two-step method

Wanti Ekawati; Ji Shi; Yoshio Nakamura; Osamu Nittono

J. Vac. Sci. Technol. A 24, 408–412 (2006) https://doi.org/10.1116/1.2186652

Abstract

View articletitled, Effects of Pt addition on the formation of Co–ITO granular magnetoresistance films by a two-step method

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Electron cyclotron resonance plasma assisted pulsed laser deposition for compound host film synthesis and in situ doping

Y. F. Lu; J. Sun; D. Yu; L. Q. Shi; Z. B. Dong; J. D. Wu

J. Vac. Sci. Technol. A 24, 413–417 (2006) https://doi.org/10.1116/1.2186653

Abstract

View articletitled, Electron cyclotron resonance plasma assisted pulsed laser deposition for compound host film synthesis and in situ doping

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Deposition of hafnium oxide from Hf $t$ -butoxide and nitric oxide

Z. Zhang; B. Xia; W. L. Gladfelter; S. A. Campbell

J. Vac. Sci. Technol. A 24, 418–423 (2006) https://doi.org/10.1116/1.2186660

Abstract

View articletitled, Deposition of hafnium oxide from Hf <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">t</mi></math>-butoxide and nitric oxide

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Plasma etching of benzocyclobutene in $C F_{4} ∕ O_{2}$ and $S F_{6} ∕ O_{2}$ plasmas

G. S. Kim; C. Steinbrüchel

J. Vac. Sci. Technol. A 24, 424–430 (2006) https://doi.org/10.1116/1.2187994

Abstract

View articletitled, Plasma etching of benzocyclobutene in <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">C</mi><msub><mi mathvariant="normal">F</mi><mn>4</mn></msub><mo>∕</mo><msub><mi mathvariant="normal">O</mi><mn>2</mn></msub></mrow></math> and <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">S</mi><msub><mi mathvariant="normal">F</mi><mn>6</mn></msub><mo>∕</mo><msub><mi mathvariant="normal">O</mi><mn>2</mn></msub></mrow></math> plasmas

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Study of temperature influence on electron beam induced deposition

Wei Li; David C. Joy

J. Vac. Sci. Technol. A 24, 431–436 (2006) https://doi.org/10.1116/1.2187995

Abstract

View articletitled, Study of temperature influence on electron beam induced deposition

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Selective etching of high- $k$ $Hf O_{2}$ films over Si in hydrogen-added fluorocarbon (⁠ $C F_{4} ∕ Ar ∕ H_{2}$ and $C_{4} F_{8} ∕ Ar ∕ H_{2}$ ⁠) plasmas

Kazuo Takahashi; Kouichi Ono

J. Vac. Sci. Technol. A 24, 437–443 (2006) https://doi.org/10.1116/1.2187997

Abstract

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Characterization of the NiFe sputter etch process in a rf plasma

Thomas J. Kropewnicki; Alex M. Paterson; Theodoros Panagopoulos; John P. Holland

J. Vac. Sci. Technol. A 24, 444–449 (2006) https://doi.org/10.1116/1.2187998

Abstract

View articletitled, Characterization of the NiFe sputter etch process in a rf plasma

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Computational analysis of solid-vapor equilibria for ZnS and SrS phosphor synthesis conditions

Heribert Wiedemeier

J. Vac. Sci. Technol. A 24, 450–458 (2006) https://doi.org/10.1116/1.2190648

Abstract

View articletitled, Computational analysis of solid-vapor equilibria for ZnS and SrS phosphor synthesis conditions

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Electrical property improvements of yttrium oxide-based metal-insulator-metal capacitors

C. Durand; C. Vallée; C. Dubourdieu; M. Kahn; M. Derivaz; S. Blonkowski; D. Jalabert; P. Hollinger; Q. Fang; I. W. Boyd

J. Vac. Sci. Technol. A 24, 459–466 (2006) https://doi.org/10.1116/1.2190649

Abstract

View articletitled, Electrical property improvements of yttrium oxide-based metal-insulator-metal capacitors

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Vacuum science considerations for rapid reactor recovery with extremely low oxygen in low temperature low pressure chemical vapor deposition of ${Si}_{1 - x} {Ge}_{x}$ and ${Si}_{1 - x - y} {Ge}_{x} C_{y}$ films

Darwin Enicks; Gerald Oleszek

J. Vac. Sci. Technol. A 24, 467–473 (2006) https://doi.org/10.1116/1.2190650

Abstract

View articletitled, Vacuum science considerations for rapid reactor recovery with extremely low oxygen in low temperature low pressure chemical vapor deposition of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi mathvariant="normal">Si</mi><mrow><mn>1</mn><mo>−</mo><mi>x</mi></mrow></msub><msub><mi mathvariant="normal">Ge</mi><mi>x</mi></msub></mrow></math> and <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi mathvariant="normal">Si</mi><mrow><mn>1</mn><mo>−</mo><mi>x</mi><mo>−</mo><mi>y</mi></mrow></msub><msub><mi mathvariant="normal">Ge</mi><mi>x</mi></msub><msub><mi mathvariant="normal">C</mi><mi>y</mi></msub></mrow></math> films

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Thin film reaction of transition metals with germanium

S. Gaudet; C. Detavernier; A. J. Kellock; P. Desjardins; C. Lavoie

J. Vac. Sci. Technol. A 24, 474–485 (2006) https://doi.org/10.1116/1.2191861

Abstract

View articletitled, Thin film reaction of transition metals with germanium

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Attenuation of hydrogen radicals traveling under flowing gas conditions through tubes of different materials

R. K. Grubbs; S. M. George

J. Vac. Sci. Technol. A 24, 486–496 (2006) https://doi.org/10.1116/1.2191862

Abstract

View articletitled, Attenuation of hydrogen radicals traveling under flowing gas conditions through tubes of different materials

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Surfactant-assisted growth of CdS thin films for photovoltaic applications

Craig L. Perkins; Falah S. Hasoon

J. Vac. Sci. Technol. A 24, 497–504 (2006) https://doi.org/10.1116/1.2194929

Abstract

View articletitled, Surfactant-assisted growth of CdS thin films for photovoltaic applications

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Characteristics and diagnostics of an ultrahigh vacuum compatible laser ablation source for crossed molecular beam experiments

Xibin Gu; Ying Guo; Ed Kawamura; Ralf I. Kaiser

J. Vac. Sci. Technol. A 24, 505–511 (2006) https://doi.org/10.1116/1.2194935

Abstract

View articletitled, Characteristics and diagnostics of an ultrahigh vacuum compatible laser ablation source for crossed molecular beam experiments

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Effect of multipactor discharge on Alcator C-Mod ion cyclotron range of frequency heating

T. P. Graves; S. J. Wukitch; B. LaBombard; I. H. Hutchinson

J. Vac. Sci. Technol. A 24, 512–516 (2006) https://doi.org/10.1116/1.2194937

Abstract

View articletitled, Effect of multipactor discharge on Alcator C-Mod ion cyclotron range of frequency heating

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Arsenic doping for synthesis of nanocrystalline $p$ -type ZnO thin films

Ning Xu; Yingliang Xu; Li Li; Yiqun Shen; Tinwei Zhang; Jiada Wu; Jian Sun; Zhifeng Ying

J. Vac. Sci. Technol. A 24, 517–520 (2006) https://doi.org/10.1116/1.2194939

Abstract

View articletitled, Arsenic doping for synthesis of nanocrystalline <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">p</mi></math>-type ZnO thin films

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Low-temperature sputtering of crystalline $Ti O_{2}$ films

J. Musil; D. Heřman; J. Šícha

J. Vac. Sci. Technol. A 24, 521–528 (2006) https://doi.org/10.1116/1.2187993

Abstract

View articletitled, Low-temperature sputtering of crystalline <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Ti</mi><msub><mi mathvariant="normal">O</mi><mn>2</mn></msub></mrow></math> films

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Conductance measurement of a conical tube and calculation of the pressure distribution

B. Mercier

J. Vac. Sci. Technol. A 24, 529–536 (2006) https://doi.org/10.1116/1.2187996

Abstract

View articletitled, Conductance measurement of a conical tube and calculation of the pressure distribution

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Mechanical properties of Cu–Al–O thin films prepared by plasma-enhanced chemical vapor deposition

Wen Chen; Hao Gong; Kaiyang Zeng

J. Vac. Sci. Technol. A 24, 537–541 (2006) https://doi.org/10.1116/1.2191860

Abstract

View articletitled, Mechanical properties of Cu–Al–O thin films prepared by plasma-enhanced chemical vapor deposition

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Detecting free radicals during the hot wire chemical vapor deposition of amorphous silicon carbide films using single-source precursors

Gillian A. Zaharias; H. L. Duan; Stacey F. Bent

J. Vac. Sci. Technol. A 24, 542–549 (2006) https://doi.org/10.1116/1.2194023

Abstract

View articletitled, Detecting free radicals during the hot wire chemical vapor deposition of amorphous silicon carbide films using single-source precursors

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Atmospheric pressure plasma analysis by modulated molecular beam mass spectrometry

Y. Aranda Gonzalvo; T. D. Whitmore; J. A. Rees; D. L. Seymour; E. Stoffels

J. Vac. Sci. Technol. A 24, 550–553 (2006) https://doi.org/10.1116/1.2194938

Abstract

View articletitled, Atmospheric pressure plasma analysis by modulated molecular beam mass spectrometry

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Hard multilayer coatings containing TiN and/or ZrN: A review and recent progress in their nanoscale characterization

C. Ziebert; S. Ulrich

J. Vac. Sci. Technol. A 24, 554–583 (2006) https://doi.org/10.1116/1.2194031

Abstract

View articletitled, Hard multilayer coatings containing TiN and/or ZrN: A review and recent progress in their nanoscale characterization

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PAPERS FROM THE 12TH CANADIAN SEMICONDUCTOR TECHNOLOGY CONFERENCE

Epitaxy and Thin Films

Growth and characterization of GaAsSb metamorphic samples on an InP substrate

F. M. Mohammedy; O. Hulko; B. J. Robinson; D. A. Thompson; M. J. Deen; J. G. Simmons

J. Vac. Sci. Technol. A 24, 587–590 (2006) https://doi.org/10.1116/1.2194024

Abstract

View articletitled, Growth and characterization of GaAsSb metamorphic samples on an InP substrate

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Investigation of the optical properties of InGaAs(N):(Sb) quantum wells grown by metal organic vapor phase epitaxy

W. C. Chen; Y. K. Su; R. W. Chuang; S. H. Hsu

J. Vac. Sci. Technol. A 24, 591–594 (2006) https://doi.org/10.1116/1.2194025

Abstract

View articletitled, Investigation of the optical properties of InGaAs(N):(Sb) quantum wells grown by metal organic vapor phase epitaxy

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Energetic ion bombarded $Fe ∕ Al$ multilayers

M. S. Al-Busaidy; M. D. Crapper

J. Vac. Sci. Technol. A 24, 595–599 (2006) https://doi.org/10.1116/1.2194026

Abstract

View articletitled, Energetic ion bombarded <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Fe</mi><mo>∕</mo><mi mathvariant="normal">Al</mi></mrow></math> multilayers

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Compositional effect on the dielectric properties of high- $k$ titanium silicate thin films deposited by means of a cosputtering process

D. Brassard; D. K. Sarkar; M. A. El Khakani; L. Ouellet

J. Vac. Sci. Technol. A 24, 600–605 (2006) https://doi.org/10.1116/1.2180267

Abstract

View articletitled, Compositional effect on the dielectric properties of high-<math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">k</mi></math> titanium silicate thin films deposited by means of a cosputtering process

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Growth of $Cd Te ∕ Si (100)$ thin films by pulsed laser deposition for photonic applications

S. Neretina; R. A. Hughes; N. V. Sochinskii; M. Weber; K. G. Lynn; J. Wojcik; G. N. Pearson; J. S. Preston; P. Mascher

J. Vac. Sci. Technol. A 24, 606–611 (2006) https://doi.org/10.1116/1.2183297

Abstract

View articletitled, Growth of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Cd</mi><mi mathvariant="normal">Te</mi><mo>∕</mo><mi mathvariant="normal">Si</mi><mrow><mo>(</mo><mn>100</mn><mo>)</mo></mrow></mrow></math> thin films by pulsed laser deposition for photonic applications

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Thermochromic vanadium dioxide smart coatings grown on Kapton substrates by reactive pulsed laser deposition

M. Soltani; M. Chaker; E. Haddad; R. V. Kruzelesky

J. Vac. Sci. Technol. A 24, 612–617 (2006) https://doi.org/10.1116/1.2186661

Abstract

View articletitled, Thermochromic vanadium dioxide smart coatings grown on Kapton substrates by reactive pulsed laser deposition

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High-performance $n$ -channel $13.56 MHz$ plasma-enhanced chemical vapor deposition nanocrystalline silicon thin-film transistors

Czang-Ho Lee; Andrei Sazonov; Arokia Nathan

J. Vac. Sci. Technol. A 24, 618–623 (2006) https://doi.org/10.1116/1.2194027

Abstract

View articletitled, High-performance <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">n</mi></math>-channel <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mn>13.56</mn><mspace width="0.3em"></mspace><mi>MHz</mi></mrow></math> plasma-enhanced chemical vapor deposition nanocrystalline silicon thin-film transistors

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Wide Band Gap Materials and Devices

Self-heating and the temperature dependence of the dc characteristics of GaN heterostructure field effect transistors

S. P. McAlister; J. A. Bardwell; S. Haffouz; H. Tang

J. Vac. Sci. Technol. A 24, 624–628 (2006) https://doi.org/10.1116/1.2172921

Abstract

View articletitled, Self-heating and the temperature dependence of the dc characteristics of GaN heterostructure field effect transistors

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Characterization and modeling of $Al Ga N ∕ Ga N$ heterostructure field effect transistors for low noise amplifiers

S. H. Knox; J. W. M. Rogers; P. N. A. Chyurlia; N. G. Tarr; J. A. Bardwell; H. Tang; S. Haffouz

J. Vac. Sci. Technol. A 24, 629–633 (2006) https://doi.org/10.1116/1.2186659

Abstract

View articletitled, Characterization and modeling of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Al</mi><mi mathvariant="normal">Ga</mi><mi mathvariant="normal">N</mi><mo>∕</mo><mi mathvariant="normal">Ga</mi><mi mathvariant="normal">N</mi></mrow></math> heterostructure field effect transistors for low noise amplifiers

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Improvement of electrical and optical properties of $p - Ga N$ Ohmic metals under ultraviolet light irradiation annealing processes

S. W. Chae; S. K. Yoon; J. S. Kwak; Y. H. Park; T. G. Kim

J. Vac. Sci. Technol. A 24, 634–636 (2006) https://doi.org/10.1116/1.2183192

Abstract

View articletitled, Improvement of electrical and optical properties of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi>p</mi><mtext>-</mtext><mi mathvariant="normal">Ga</mi><mi mathvariant="normal">N</mi></mrow></math> Ohmic metals under ultraviolet light irradiation annealing processes

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Nitride-based ultraviolet metal-semiconductor-metal photodetectors with low-temperature GaN cap layers and $Ir ∕ Pt$ contact electrodes

S. J. Chang; C. L. Yu; C. H. Chen; P. C. Chang; K. C. Huang

J. Vac. Sci. Technol. A 24, 637–640 (2006) https://doi.org/10.1116/1.2162560

Abstract

View articletitled, Nitride-based ultraviolet metal-semiconductor-metal photodetectors with low-temperature GaN cap layers and <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Ir</mi><mo>∕</mo><mi mathvariant="normal">Pt</mi></mrow></math> contact electrodes

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Visible-blind ultraviolet imagers consisting of $8 \times 8$ AlGaN $p - i - n$ photodiode arrays

K. C. Kim; Y. M. Sung; I. H. Lee; C. R. Lee; M. D. Kim; Y. Park; T. G. Kim

J. Vac. Sci. Technol. A 24, 641–644 (2006) https://doi.org/10.1116/1.2192523

Abstract

View articletitled, Visible-blind ultraviolet imagers consisting of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mn>8</mn><mo>×</mo><mn>8</mn></mrow></math> AlGaN <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi>p</mi><mtext>-</mtext><mi>i</mi><mtext>-</mtext><mi>n</mi></mrow></math> photodiode arrays

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Organic Materials and Devices

Molecular model $T 6 : C_{60}$ bulk-heterojunction solar cells

S. Alem; A. K. Pandey; K. N. N. Unni; J.-M. Nunzi; P. Blanchard

J. Vac. Sci. Technol. A 24, 645–648 (2006) https://doi.org/10.1116/1.2183160

Abstract

View articletitled, Molecular model <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">T</mi><mn>6</mn><mo>:</mo><msub><mi mathvariant="normal">C</mi><mn>60</mn></msub></mrow></math> bulk-heterojunction solar cells

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Charge localization in polymeric metal-oxide-semiconductor capacitors

O. Marinov; M. J. Deen; B. Iniguez; B. Ong

J. Vac. Sci. Technol. A 24, 649–653 (2006) https://doi.org/10.1116/1.2172929

Abstract

View articletitled, Charge localization in polymeric metal-oxide-semiconductor capacitors

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Hole mobility and electroluminescence properties of a dithiophene indenofluorene

C. Py; T. C. Gorjanc; T. Hadizad; J. Zhang; Z. Y. Wang

J. Vac. Sci. Technol. A 24, 654–656 (2006) https://doi.org/10.1116/1.2180265

Abstract

View articletitled, Hole mobility and electroluminescence properties of a dithiophene indenofluorene

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Photolithographically defined polythiophene organic thin-film transistors

Flora M. Li; Yuri Vygranenko; Sarswati Koul; Arokia Nathan

J. Vac. Sci. Technol. A 24, 657–662 (2006) https://doi.org/10.1116/1.2165653

Abstract

View articletitled, Photolithographically defined polythiophene organic thin-film transistors

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Characterization of Devices and Materials

Probing the composition of Ge dots and $Si ∕ {Si}_{1 - x} {Ge}_{x}$ island superlattices

J.-M. Baribeau; X. Wu; D. J. Lockwood

J. Vac. Sci. Technol. A 24, 663–667 (2006) https://doi.org/10.1116/1.2186658

Abstract

View articletitled, Probing the composition of Ge dots and <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Si</mi><mo>∕</mo><msub><mi mathvariant="normal">Si</mi><mrow><mn>1</mn><mo>−</mo><mi>x</mi></mrow></msub><msub><mi mathvariant="normal">Ge</mi><mi>x</mi></msub></mrow></math> island superlattices

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Organic monolayers detected by single reflection attenuated total reflection infrared spectroscopy

N. L. Rowell; L. Tay; D. J. Lockwood; J.-M. Baribeau; J. A. Bardwell; R. Boukherroub

J. Vac. Sci. Technol. A 24, 668–672 (2006) https://doi.org/10.1116/1.2180270

Abstract

View articletitled, Organic monolayers detected by single reflection attenuated total reflection infrared spectroscopy

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Dynamic electrostatic force-gradient microscopy employing mechanoelectric cross modulation

Z. Weng; T. Kaminski; G. E. Bridges; D. J. Thomson

J. Vac. Sci. Technol. A 24, 673–677 (2006) https://doi.org/10.1116/1.2180268

Abstract

View articletitled, Dynamic electrostatic force-gradient microscopy employing mechanoelectric cross modulation

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Characteristics of remote plasma atomic layer-deposited $Hf O_{2}$ films on $O_{2}$ and $N_{2}$ plasma-pretreated Si substrates

Jihoon Choi; Seokhoon Kim; Jinwoo Kim; Hyunseok Kang; Hyeongtag Jeon; Choelhwyi Bae

J. Vac. Sci. Technol. A 24, 678–681 (2006) https://doi.org/10.1116/1.2194029

Abstract

View articletitled, Characteristics of remote plasma atomic layer-deposited <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Hf</mi><msub><mi mathvariant="normal">O</mi><mn>2</mn></msub></mrow></math> films on <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">O</mi><mn>2</mn></msub></math> and <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">N</mi><mn>2</mn></msub></math> plasma-pretreated Si substrates

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Annealing temperature effect on the performance of nonvolatile ${HfO}_{2}$ Si-oxide-nitride-oxide-silicon-type flash memory

Yu-Hsien Lin; Chao-Hsin Chien; Chun-Yen Chang; Tan-Fu Lei

J. Vac. Sci. Technol. A 24, 682–685 (2006) https://doi.org/10.1116/1.2174021

Abstract

View articletitled, Annealing temperature effect on the performance of nonvolatile <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi>HfO</mi><mn>2</mn></msub></mrow></math> Si-oxide-nitride-oxide-silicon-type flash memory

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Time resolved electroluminescence measurements on GaAs and GaN devices

J. E. Hulse; K. Sarault; N. L. Rowell; M. Simard-Normandin; J. A. Bardwell

J. Vac. Sci. Technol. A 24, 686–689 (2006) https://doi.org/10.1116/1.2172931

Abstract

View articletitled, Time resolved electroluminescence measurements on GaAs and GaN devices

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Performance and potential of germanium on insulator field-effect transistors

D. S. Yu; H. L. Kao; A. Chin; S. P. McAlister

J. Vac. Sci. Technol. A 24, 690–693 (2006) https://doi.org/10.1116/1.2167978

Abstract

View articletitled, Performance and potential of germanium on insulator field-effect transistors

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Nanostructures and Nanotechnology

Microstructure investigations of indium tin oxide films cosputtered with zinc oxide at room temperature

Day-Shan Liu; Chun-Hsing Lin; Fu-Chun Tsai; Chun-Ching Wu

J. Vac. Sci. Technol. A 24, 694–699 (2006) https://doi.org/10.1116/1.2194030

Abstract

View articletitled, Microstructure investigations of indium tin oxide films cosputtered with zinc oxide at room temperature

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Rapid thermal annealing of $In As ∕ Ga As$ quantum dots with a low-temperature-grown InGaP cap layer

W. H. Jiang; D. A. Thompson; O. Hul’ko; B. J. Robinson; P. Mascher

J. Vac. Sci. Technol. A 24, 700–703 (2006) https://doi.org/10.1116/1.2165655

Abstract

View articletitled, Rapid thermal annealing of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">In</mi><mi mathvariant="normal">As</mi><mo>∕</mo><mi mathvariant="normal">Ga</mi><mi mathvariant="normal">As</mi></mrow></math> quantum dots with a low-temperature-grown InGaP cap layer

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Observation of resonant tunneling through a self-assembled $InAs$ quantum dot layer

B. Aslan; H. C. Liu; J. A. Gupta; Z. R. Wasilewski; G. C. Aers; S. Raymond; M. Buchanan

J. Vac. Sci. Technol. A 24, 704–707 (2006) https://doi.org/10.1116/1.2167085

Abstract

View articletitled, Observation of resonant tunneling through a self-assembled <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi>InAs</mi></mrow></math> quantum dot layer

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Switching-speed calculations for Schottky-barrier carbon nanotube field-effect transistors

D. L. John; D. L. Pulfrey

J. Vac. Sci. Technol. A 24, 708–712 (2006) https://doi.org/10.1116/1.2194932

Abstract

View articletitled, Switching-speed calculations for Schottky-barrier carbon nanotube field-effect transistors

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Photoluminescence in the silicon-oxygen system

A. Meldrum; A. Hryciw; A. N. MacDonald; C. Blois; K. Marsh; J. Wang; Quan Li

J. Vac. Sci. Technol. A 24, 713–717 (2006) https://doi.org/10.1116/1.2162563

Abstract

View articletitled, Photoluminescence in the silicon-oxygen system

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Microfabrication, Micromachining, and MEMS

Fabrication of out-of-plane micromirrors in silicon-on-insulator planar waveguides

B. Lamontagne; P. Cheben; E. Post; S. Janz; D.-X. Xu; A. Delâge

J. Vac. Sci. Technol. A 24, 718–722 (2006) https://doi.org/10.1116/1.2186656

Abstract

View articletitled, Fabrication of out-of-plane micromirrors in silicon-on-insulator planar waveguides

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Formation of nanoscale columnar structures in silicon by a maskless reactive ion etching process

M. Gharghi; S. Sivoththaman

J. Vac. Sci. Technol. A 24, 723–727 (2006) https://doi.org/10.1116/1.2167974

Abstract

View articletitled, Formation of nanoscale columnar structures in silicon by a maskless reactive ion etching process

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Inductively coupled plasma etching of ${Si}_{1 - x} {Ge}_{x}$ in $C F_{4} ∕ Ar$ and ${Cl}_{2} ∕ Ar$ discharges

San Lein Wu; Chun Hsin Lee; Shoou Jinn Chang; Yu Min Lin

J. Vac. Sci. Technol. A 24, 728–731 (2006) https://doi.org/10.1116/1.2180266

Abstract

View articletitled, Inductively coupled plasma etching of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi mathvariant="normal">Si</mi><mrow><mn>1</mn><mo>−</mo><mi>x</mi></mrow></msub><msub><mi mathvariant="normal">Ge</mi><mi>x</mi></msub></mrow></math> in <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">C</mi><msub><mi mathvariant="normal">F</mi><mn>4</mn></msub><mo>∕</mo><mi mathvariant="normal">Ar</mi></mrow></math> and <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi mathvariant="normal">Cl</mi><mn>2</mn></msub><mo>∕</mo><mi mathvariant="normal">Ar</mi></mrow></math> discharges

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Direct evidence of “spring softening” nonlinearity in micromachined mechanical resonator using optical beam deflection technique

J. H. Zhao; G. E. Bridges; D. J. Thomson

J. Vac. Sci. Technol. A 24, 732–736 (2006) https://doi.org/10.1116/1.2194934

Abstract

View articletitled, Direct evidence of “spring softening” nonlinearity in micromachined mechanical resonator using optical beam deflection technique

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Microelectrode arrays for two-dimensional polar movement of microparticles in water

Andre Belisle; Matthew Brown; Ted Hubbard; Marek Kujath

J. Vac. Sci. Technol. A 24, 737–741 (2006) https://doi.org/10.1116/1.2180271

Abstract

View articletitled, Microelectrode arrays for two-dimensional polar movement of microparticles in water

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Fabricating multilevel SU-8 structures in a single photolithographic step using colored masking patterns

J. Taff; Y. Kashte; V. Spinella-Mamo; M. Paranjape

J. Vac. Sci. Technol. A 24, 742–746 (2006) https://doi.org/10.1116/1.2172927

Abstract

View articletitled, Fabricating multilevel SU-8 structures in a single photolithographic step using colored masking patterns

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Sensors and Microelectronic Devices

In situ monitoring of protein adsorption on functionalized porous Si surfaces

L. Tay; N. L. Rowell; D. J. Lockwood; R. Boukherroub

J. Vac. Sci. Technol. A 24, 747–751 (2006) https://doi.org/10.1116/1.2192525

Abstract

View articletitled, In situ monitoring of protein adsorption on functionalized porous Si surfaces

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Ultrawideband radar imaging system for biomedical applications

H. M. Jafari; W. Liu; S. Hranilovic; M. J. Deen

J. Vac. Sci. Technol. A 24, 752–757 (2006) https://doi.org/10.1116/1.2194028

Abstract

View articletitled, Ultrawideband radar imaging system for biomedical applications

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Practical approach to gradient direction sensor method in very large scale integration thermomechanical stress analysis

Ahmed Lakhsasi; Mohammed Bougataya; Daniel Massicotte

J. Vac. Sci. Technol. A 24, 758–762 (2006) https://doi.org/10.1116/1.2186655

Abstract

View articletitled, Practical approach to gradient direction sensor method in very large scale integration thermomechanical stress analysis

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Very low-voltage operation capability of complementary metal-oxide-semiconductor ring oscillators and logic gates

M. Jamal Deen; Sasan Naseh; Ognian Marinov; Mehdi H. Kazemeini

J. Vac. Sci. Technol. A 24, 763–769 (2006) https://doi.org/10.1116/1.2167973

Abstract

View articletitled, Very low-voltage operation capability of complementary metal-oxide-semiconductor ring oscillators and logic gates

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Low noise signal-to-noise ratio enhancing readout circuit for current-mediated active pixel sensors

Tony Ottaviani; Karim S. Karim; Arokia Nathan; John A. Rowlands

J. Vac. Sci. Technol. A 24, 770–773 (2006) https://doi.org/10.1116/1.2162562

Abstract

View articletitled, Low noise signal-to-noise ratio enhancing readout circuit for current-mediated active pixel sensors

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Photonic Devices and Materials

Terahertz emission properties of arsenic and oxygen ion-implanted GaAs based photoconductive pulsed sources

B. Salem; D. Morris; Y. Salissou; V. Aimez; S. Charlebois; M. Chicoine; F. Schiettekatte

J. Vac. Sci. Technol. A 24, 774–777 (2006) https://doi.org/10.1116/1.2183284

Abstract

View articletitled, Terahertz emission properties of arsenic and oxygen ion-implanted GaAs based photoconductive pulsed sources

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Terahertz quantum cascade lasers: Fabrication, characterization, and doping effect

D. Ban; M. Wächter; H. C. Liu; Z. R. Wasilewski; M. Buchanan; G. C. Aers

J. Vac. Sci. Technol. A 24, 778–782 (2006) https://doi.org/10.1116/1.2174020

Abstract

View articletitled, Terahertz quantum cascade lasers: Fabrication, characterization, and doping effect

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Silicon-on-insulator waveguide photodetector with self-ion-implantation-engineered-enhanced infrared response

A. P. Knights; J. D. B. Bradley; S. H. Gou; P. E. Jessop

J. Vac. Sci. Technol. A 24, 783–786 (2006) https://doi.org/10.1116/1.2167975

Abstract

View articletitled, Silicon-on-insulator waveguide photodetector with self-ion-implantation-engineered-enhanced infrared response

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Gain spectra of $1.3 μ m$ GaInNAs laser diodes

X. Zhang; J. A. Gupta; P. J. Barrios; G. Pakulski; X. Wu; A. Delâge

J. Vac. Sci. Technol. A 24, 787–790 (2006) https://doi.org/10.1116/1.2186662

Abstract

View articletitled, Gain spectra of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mn>1.3</mn><mspace width="0.3em"></mspace><mi>μ</mi><mi mathvariant="normal">m</mi></mrow></math> GaInNAs laser diodes

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Modified single missing air-hole defects in $In As ∕ In P$ quantum dot membrane photonic crystal microcavities

Dan Dalacu; Simon Frédérick; Jean Lapointe; Philip J. Poole; Geof C. Aers; Robin L. Williams

J. Vac. Sci. Technol. A 24, 791–796 (2006) https://doi.org/10.1116/1.2165654

Abstract

View articletitled, Modified single missing air-hole defects in <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">In</mi><mi mathvariant="normal">As</mi><mo>∕</mo><mi mathvariant="normal">In</mi><mi mathvariant="normal">P</mi></mrow></math> quantum dot membrane photonic crystal microcavities

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Measurements of ${TiO}_{x}$ stress induced on $InP ∕ InGaAs ∕ InGaAsP$ quantum well heterostructures

A. Francois; V. Aimez; J. Beauvais; D. Barba

J. Vac. Sci. Technol. A 24, 797–801 (2006) https://doi.org/10.1116/1.2172925

Abstract

View articletitled, Measurements of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi>TiO</mi><mi>x</mi></msub></mrow></math> stress induced on <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi>InP</mi><mo>∕</mo><mi>InGaAs</mi><mo>∕</mo><mi>InGaAsP</mi></mrow></math> quantum well heterostructures

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Microelectromechanical system based variable optical attenuator by vertically bending waveguides

Guhong Zhang; Paul E. Jessop

J. Vac. Sci. Technol. A 24, 802–806 (2006) https://doi.org/10.1116/1.2190651

Abstract

View articletitled, Microelectromechanical system based variable optical attenuator by vertically bending waveguides

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Electrical isolation of electrodes with submicron separation in a digital optical switch

S. Ng; S. Abdalla; B. Syrett; P. Barrios; W. R. McKinnon; A. Delâge; I. Golub; S. Janz; J. Lapointe

J. Vac. Sci. Technol. A 24, 807–811 (2006) https://doi.org/10.1116/1.2167976

Abstract

View articletitled, Electrical isolation of electrodes with submicron separation in a digital optical switch

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Fabrication of lithographically defined optical coupling facets for silicon-on-insulator waveguides by inductively coupled plasma etching

K. P. Yap; B. Lamontagne; A. Delâge; S. Janz; A. Bogdanov; M. Picard; E. Post; P. Chow-Chong; M. Malloy; D. Roth; P. Marshall; K. Y. Liu; B. Syrett

J. Vac. Sci. Technol. A 24, 812–816 (2006) https://doi.org/10.1116/1.2186657

Abstract

View articletitled, Fabrication of lithographically defined optical coupling facets for silicon-on-insulator waveguides by inductively coupled plasma etching

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H-induced effects in luminescent silicon nanostructures obtained from plasma enhanced chemical vapor deposition grown ${Si}_{y} O_{1 - y} : H (y > 1 ∕ 3)$ thin films annealed in $(Ar + 5 % H_{2})$

D. Comedi; O. H. Y. Zalloum; E. A. Irving; J. Wojcik; P. Mascher

J. Vac. Sci. Technol. A 24, 817–820 (2006) https://doi.org/10.1116/1.2177227

Abstract

View articletitled, H-induced effects in luminescent silicon nanostructures obtained from plasma enhanced chemical vapor deposition grown <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi mathvariant="normal">Si</mi><mi>y</mi></msub><msub><mi mathvariant="normal">O</mi><mrow><mn>1</mn><mo>−</mo><mi>y</mi></mrow></msub><mo>:</mo><mi mathvariant="normal">H</mi><mrow><mo>(</mo><mi>y</mi><mo>></mo><mn>1</mn><mo>∕</mo><mn>3</mn><mo>)</mo></mrow></mrow></math> thin films annealed in <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mo>(</mo><mi mathvariant="normal">Ar</mi><mo>+</mo><mn>5</mn><mo>%</mo><msub><mi mathvariant="normal">H</mi><mn>2</mn></msub><mo>)</mo></mrow></math>

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Near-unity ideality factor diodes using nanocrystalline Si/multicrystalline Si heterojunctions for photovoltaic application

Mahdi Farrokh-Baroughi; Czang-Ho Lee; Siva Sivoththaman

J. Vac. Sci. Technol. A 24, 821–826 (2006) https://doi.org/10.1116/1.2155532

Abstract

View articletitled, Near-unity ideality factor diodes using nanocrystalline Si/multicrystalline Si heterojunctions for photovoltaic application

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Components for Wireless Communication

Characterization of microwave photonic band-gap structures with bandpass filter applications

J. H. Wu; I. Shih; S. N. Qiu; C. X. Qiu

J. Vac. Sci. Technol. A 24, 827–830 (2006) https://doi.org/10.1116/1.2148412

Abstract

View articletitled, Characterization of microwave photonic band-gap structures with bandpass filter applications

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Temperature effects in complementary metal-oxide semiconductor microwave distributed amplifiers

J. C. Ranuárez; M. J. Deen; C. H. Chen

J. Vac. Sci. Technol. A 24, 831–834 (2006) https://doi.org/10.1116/1.2192524

Abstract

View articletitled, Temperature effects in complementary metal-oxide semiconductor microwave distributed amplifiers

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Parasitics-aware layout design of a low-power fully integrated complementary metal-oxide semiconductor power amplifier

Samar M. Abdelsayed; M. Jamal Deen; Natalia K. Nikolova

J. Vac. Sci. Technol. A 24, 835–840 (2006) https://doi.org/10.1116/1.2180269

Abstract

View articletitled, Parasitics-aware layout design of a low-power fully integrated complementary metal-oxide semiconductor power amplifier

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On-chip inductors incorporating porous-Si and intrinsic-amorphous-Si films for rf integrated circuits

Stella Chang; Siva Sivoththaman

J. Vac. Sci. Technol. A 24, 841–845 (2006) https://doi.org/10.1116/1.2162561

Abstract

View articletitled, On-chip inductors incorporating porous-Si and intrinsic-amorphous-Si films for rf integrated circuits

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Display and Imaging Technology

High dynamic range pixel architecture for advanced diagnostic medical x-ray imaging applications

Mohammad Hadi Izadi; Karim S. Karim

J. Vac. Sci. Technol. A 24, 846–849 (2006) https://doi.org/10.1116/1.2183298

Abstract

View articletitled, High dynamic range pixel architecture for advanced diagnostic medical x-ray imaging applications

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High dynamic range active pixel sensor arrays for digital x-ray imaging using $a - Si : H$

Jackson Lai; Arokia Nathan; John Rowlands

J. Vac. Sci. Technol. A 24, 850–853 (2006) https://doi.org/10.1116/1.2192526

Abstract

View articletitled, High dynamic range active pixel sensor arrays for digital x-ray imaging using <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi>a</mi><mtext>-</mtext><mi mathvariant="normal">Si</mi><mo>:</mo><mi mathvariant="normal">H</mi></mrow></math>

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Single photon counter for digital x-ray mammography tomosynthesis

Amir H. Goldan; Karim S. Karim; John A. Rowlands

J. Vac. Sci. Technol. A 24, 854–859 (2006) https://doi.org/10.1116/1.2172923

Abstract

View articletitled, Single photon counter for digital x-ray mammography tomosynthesis

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Evaluation of complementary metal-oxide semiconductor based photodetectors for low-level light detection

Yasaman Ardeshirpour; M. Jamal Deen; Shahram Shirani

J. Vac. Sci. Technol. A 24, 860–865 (2006) https://doi.org/10.1116/1.2190652

Abstract

View articletitled, Evaluation of complementary metal-oxide semiconductor based photodetectors for low-level light detection

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Low leakage $a - Si : H$ thin film transistors deposited on glass substrates using hot-wire chemical vapor deposition

F. Taghibakhsh; K. S. Karim; A. Madan

J. Vac. Sci. Technol. A 24, 866–868 (2006) https://doi.org/10.1116/1.2183296

Abstract

View articletitled, Low leakage <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi>a</mi><mtext>-</mtext><mi mathvariant="normal">Si</mi><mo>:</mo><mi mathvariant="normal">H</mi></mrow></math> thin film transistors deposited on glass substrates using hot-wire chemical vapor deposition

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Nanoscale channel and small area amorphous silicon vertical thin film transistor

Isaac Chan; Saeed Fathololoumi; Arokia Nathan

J. Vac. Sci. Technol. A 24, 869–874 (2006) https://doi.org/10.1116/1.2194933

Abstract

View articletitled, Nanoscale channel and small area amorphous silicon vertical thin film transistor

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Stable $a - Si : H$ circuits based on short-term stress stability of amorphous silicon thin film transistors

G. Reza Chaji; Nader Safavian; Arokia Nathan

J. Vac. Sci. Technol. A 24, 875–878 (2006) https://doi.org/10.1116/1.2186654

Abstract

View articletitled, Stable <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi>a</mi><mtext>-</mtext><mi mathvariant="normal">Si</mi><mo>:</mo><mi mathvariant="normal">H</mi></mrow></math> circuits based on short-term stress stability of amorphous silicon thin film transistors

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Signal and noise modeling and analysis of complementary metal-oxide semiconductor active pixel sensors

Naser Faramarzpour; M. Jamal Deen; Shahram Shirani

J. Vac. Sci. Technol. A 24, 879–882 (2006) https://doi.org/10.1116/1.2167977

Abstract

View articletitled, Signal and noise modeling and analysis of complementary metal-oxide semiconductor active pixel sensors

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Temperature characterization of $a - Si : H$ thin-film transistor for analog circuit design using analog hardware description language modeling

Clement Ng; Arokia Nathan

J. Vac. Sci. Technol. A 24, 883–887 (2006) https://doi.org/10.1116/1.2167084

Abstract

View articletitled, Temperature characterization of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi>a</mi><mtext>-</mtext><mi>Si</mi><mo>:</mo><mi mathvariant="normal">H</mi></mrow></math> thin-film transistor for analog circuit design using analog hardware description language modeling

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Numerical study on the scaling of $a - Si : H$ thin film transistors

Saeed Fathololoumi; Isaac Chan; Maryam Moradi; Arokia Nathan

J. Vac. Sci. Technol. A 24, 888–891 (2006) https://doi.org/10.1116/1.2194930

Abstract

View articletitled, Numerical study on the scaling of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi>a</mi><mtext>-</mtext><mi mathvariant="normal">Si</mi><mo>:</mo><mi mathvariant="normal">H</mi></mrow></math> thin film transistors

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Issues

Regular Articles

PAPERS FROM THE 12TH CANADIAN SEMICONDUCTOR TECHNOLOGY CONFERENCE

Epitaxy and Thin Films

Wide Band Gap Materials and Devices

Organic Materials and Devices

Characterization of Devices and Materials

Nanostructures and Nanotechnology

Microfabrication, Micromachining, and MEMS

Sensors and Microelectronic Devices

Photonic Devices and Materials

Components for Wireless Communication

Display and Imaging Technology

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