Skip Nav Destination

Issues

Select Year

Issue

Articles

Etching of ruthenium coatings in $O_{2}$ - and ${Cl}_{2}$ -containing plasmas

J. Vac. Sci. Technol. A 24, 1–8 (2006) https://doi.org/10.1116/1.2121751

View articletitled, Etching of ruthenium coatings in <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">O</mi><mn>2</mn></msub></math>- and <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Cl</mi><mn>2</mn></msub></math>-containing plasmas

Open the PDF for in another window

Free molecular background flow in a vacuum chamber equipped with two-sided pumps

Chunpei Cai; Iain D. Boyd; Quanhua Sun

J. Vac. Sci. Technol. A 24, 9–19 (2006) https://doi.org/10.1116/1.2126678

Abstract

View articletitled, Free molecular background flow in a vacuum chamber equipped with two-sided pumps

Open the PDF for in another window

Investigation of $Ni$ reaction with sputtered amorphous $SiGe$ thin film on ${SiO}_{2}$ substrate

Xin-Ping Qu; Peng Duan; Yan-Qing Wu; Tao Chen; Guang-Wei Wang; Guo-Ping Ru; Bing-Zong Li

J. Vac. Sci. Technol. A 24, 20–24 (2006) https://doi.org/10.1116/1.2126679

Abstract

View articletitled, Investigation of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi>Ni</mi></mrow></math> reaction with sputtered amorphous <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi>SiGe</mi></mrow></math> thin film on <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi>SiO</mi><mn>2</mn></msub></mrow></math> substrate

Open the PDF for in another window

Control of plasma flux composition incident on $TiN$ films during reactive magnetron sputtering and the effect on film microstructure

C. Muratore; S. G. Walton; D. Leonhardt; R. F. Fernsler

J. Vac. Sci. Technol. A 24, 25–29 (2006) https://doi.org/10.1116/1.2134706

Abstract

View articletitled, Control of plasma flux composition incident on <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi>TiN</mi></mrow></math> films during reactive magnetron sputtering and the effect on film microstructure

Open the PDF for in another window

Plasma etching of $Hf O_{2}$ at elevated temperatures in chlorine-based chemistry

M. Hélot; T. Chevolleau; L. Vallier; O. Joubert; E. Blanquet; A. Pisch; P. Mangiagalli; T. Lill

J. Vac. Sci. Technol. A 24, 30–40 (2006) https://doi.org/10.1116/1.2134707

Abstract

View articletitled, Plasma etching of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Hf</mi><msub><mi mathvariant="normal">O</mi><mn>2</mn></msub></mrow></math> at elevated temperatures in chlorine-based chemistry

Open the PDF for in another window

Effectiveness of dilute $H_{2}$ plasmas in removing boron from Si after etching of $Hf O_{2}$ films in $B {Cl}_{3}$ plasmas

C. Wang; V. M. Donnelly

J. Vac. Sci. Technol. A 24, 41–44 (2006) https://doi.org/10.1116/1.2134708

Abstract

View articletitled, Effectiveness of dilute <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">H</mi><mn>2</mn></msub></math> plasmas in removing boron from Si after etching of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Hf</mi><msub><mi mathvariant="normal">O</mi><mn>2</mn></msub></mrow></math> films in <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">B</mi><msub><mi mathvariant="normal">Cl</mi><mn>3</mn></msub></mrow></math> plasmas

Open the PDF for in another window

Ion-surface interactions on $c - Si (001)$ at the radiofrequency-powered electrode in low-pressure plasmas: Ex situ spectroscopic ellipsometry and Monte Carlo simulation study

A. Amassian; P. Desjardins; L. Martinu

J. Vac. Sci. Technol. A 24, 45–54 (2006) https://doi.org/10.1116/1.2134709

Abstract

View articletitled, Ion-surface interactions on <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi>c</mi><mtext>-</mtext><mi mathvariant="normal">Si</mi><mrow><mo>(</mo><mn>001</mn><mo>)</mo></mrow></mrow></math> at the radiofrequency-powered electrode in low-pressure plasmas: Ex situ spectroscopic ellipsometry and Monte Carlo simulation study

Open the PDF for in another window

Optical depth profiling of strontium titanate and electro-optic lanthanum-modified lead zirconium titanate multilayer structures for active waveguide applications

A. Amassian; M. Gaidi; M. Chaker; L. Martinu

J. Vac. Sci. Technol. A 24, 55–64 (2006) https://doi.org/10.1116/1.2134710

Abstract

View articletitled, Optical depth profiling of strontium titanate and electro-optic lanthanum-modified lead zirconium titanate multilayer structures for active waveguide applications

Open the PDF for in another window

Electrical properties of indium-tin oxide films deposited on nonheated substrates using a planar-magnetron sputtering system and a facing-targets sputtering system

Hideo Iwase; Youichi Hoshi; Makoto Kameyama

J. Vac. Sci. Technol. A 24, 65–69 (2006) https://doi.org/10.1116/1.2134711

Abstract

View articletitled, Electrical properties of indium-tin oxide films deposited on nonheated substrates using a planar-magnetron sputtering system and a facing-targets sputtering system

Open the PDF for in another window

SiC formation by $C_{60}$ molecules as a precursor: A synchrotron-radiation photoemission study of the carbonization process

C.-P. Cheng; T.-W. Pi; C.-P. Ouyang; J.-F. Wen

J. Vac. Sci. Technol. A 24, 70–73 (2006) https://doi.org/10.1116/1.2134712

Abstract

View articletitled, SiC formation by <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">C</mi><mn>60</mn></msub></math> molecules as a precursor: A synchrotron-radiation photoemission study of the carbonization process

Open the PDF for in another window

Study of annealed Co thin films deposited by ion beam sputtering

A. Sharma; R. Brajpuriya; S. Tripathi; S. M. Chaudhari

J. Vac. Sci. Technol. A 24, 74–77 (2006) https://doi.org/10.1116/1.2135292

Abstract

View articletitled, Study of annealed Co thin films deposited by ion beam sputtering

Open the PDF for in another window

Ge interactions on ${HfO}_{2}$ surfaces and kinetically driven patterning of Ge nanocrystals on ${HfO}_{2}$

Scott K. Stanley; Sachin V. Joshi; Sanjay K. Banerjee; John G. Ekerdt

J. Vac. Sci. Technol. A 24, 78–83 (2006) https://doi.org/10.1116/1.2137328

Abstract

View articletitled, Ge interactions on <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi>HfO</mi><mn>2</mn></msub></mrow></math> surfaces and kinetically driven patterning of Ge nanocrystals on <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi>HfO</mi><mn>2</mn></msub></mrow></math>

Open the PDF for in another window

Rapid thermal oxidation of Ge-rich ${Si}_{1 - x} {Ge}_{x}$ heterolayers

M. K. Bera; S. Chakraborty; R. Das; G. K. Dalapati; S. Chattopadhyay; S. K. Samanta; W. J. Yoo; A. K. Chakraborty; Y. Butenko; L. Šiller; M. R. C. Hunt; S. Saha; C. K. Maiti

J. Vac. Sci. Technol. A 24, 84–90 (2006) https://doi.org/10.1116/1.2137329

Abstract

View articletitled, Rapid thermal oxidation of Ge-rich <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi>Si</mi><mrow><mn>1</mn><mo>−</mo><mi>x</mi></mrow></msub><msub><mi>Ge</mi><mi>x</mi></msub></mrow></math> heterolayers

Open the PDF for in another window

Ultrasensitive leak detection during ultrahigh vacuum evacuation by quadrupole mass spectrometer

Xu Chen; Tianbin Huang; Ligong Wang; Qiji Jin; Liangzhen Cha

J. Vac. Sci. Technol. A 24, 91–94 (2006) https://doi.org/10.1116/1.2137330

Abstract

View articletitled, Ultrasensitive leak detection during ultrahigh vacuum evacuation by quadrupole mass spectrometer

Open the PDF for in another window

How deposition parameters control growth dynamics of $n c - Si$ deposited by hot-wire chemical vapor deposition

H. R. Moutinho; B. To; C.-S. Jiang; Y. Xu; B. P. Nelson; C. W. Teplin; K. M. Jones; J. Perkins; M. M. Al-Jassim

J. Vac. Sci. Technol. A 24, 95–102 (2006) https://doi.org/10.1116/1.2137331

Abstract

View articletitled, How deposition parameters control growth dynamics of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi>n</mi><mi>c</mi><mtext>-</mtext><mi mathvariant="normal">Si</mi></mrow></math> deposited by hot-wire chemical vapor deposition

Open the PDF for in another window

Low-resistivity atomic-layer-deposited- $TaN$ with atomic-layer-deposited- $TaN$ /physical-vapor-deposited-Ta multilayer structure for multilevel Cu damascene interconnect

Akira Furuya; Nobuyuki Ohtsuka; Naofumi Ohashi; Seiichi Kondo; Shinichi Ogawa

J. Vac. Sci. Technol. A 24, 103–105 (2006) https://doi.org/10.1116/1.2137332

Abstract

View articletitled, Low-resistivity atomic-layer-deposited-<math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi>TaN</mi></mrow></math> with atomic-layer-deposited-<math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi>TaN</mi></mrow></math>/physical-vapor-deposited-Ta multilayer structure for multilevel Cu damascene interconnect

Open the PDF for in another window

High-rate deposition of MgO by reactive ac pulsed magnetron sputtering in the transition mode

H. Kupfer; R. Kleinhempel; F. Richter; C. Peters; U. Krause; T. Kopte; Y. Cheng

J. Vac. Sci. Technol. A 24, 106–113 (2006) https://doi.org/10.1116/1.2138717

Abstract

View articletitled, High-rate deposition of MgO by reactive ac pulsed magnetron sputtering in the transition mode

Open the PDF for in another window

Spectroscopic study of gas and surface phase chemistries of $C F_{4}$ plasmas in an inductively coupled modified gaseous electronics conference reactor

Baosuo Zhou; Eric A. Joseph; Lawrence J. Overzet; Matthew J. Goeckner

J. Vac. Sci. Technol. A 24, 114–125 (2006) https://doi.org/10.1116/1.2138718

Abstract

View articletitled, Spectroscopic study of gas and surface phase chemistries of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">C</mi><msub><mi mathvariant="normal">F</mi><mn>4</mn></msub></mrow></math> plasmas in an inductively coupled modified gaseous electronics conference reactor

Open the PDF for in another window

In situ Fourier transform infrared characterization of the plasma chemistry in varying pulsed cycles of a 1,3-butadiene discharge in an inductively coupled gaseous electronics conference cell

A. K. Jindal; A. J. Prengler; L. J. Overzet; M. J. Goeckner

J. Vac. Sci. Technol. A 24, 126–132 (2006) https://doi.org/10.1116/1.2141618

Abstract

View articletitled, In situ Fourier transform infrared characterization of the plasma chemistry in varying pulsed cycles of a 1,3-butadiene discharge in an inductively coupled gaseous electronics conference cell

Open the PDF for in another window

Effects of $N_{2}$ ⁠, $O_{2}$ ⁠, and Ar plasma treatments on the removal of crystallized ${HfO}_{2}$ film

Jinghao Chen; Won Jong Yoo; Daniel S. H. Chan

J. Vac. Sci. Technol. A 24, 133–140 (2006) https://doi.org/10.1116/1.2141619

Abstract

View articletitled, Effects of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi mathvariant="normal">N</mi><mn>2</mn></msub></mrow></math>⁠, <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi mathvariant="normal">O</mi><mn>2</mn></msub></mrow></math>⁠, and Ar plasma treatments on the removal of crystallized <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi>HfO</mi><mn>2</mn></msub></mrow></math> film

Open the PDF for in another window

Influence of excitonic singlet-triplet splitting on the photoluminescence of $Si ∕ Si O_{2}$ multiple quantum wells fabricated by remote plasma-enhanced chemical-vapor deposition

R. Rölver; M. Först; O. Winkler; B. Spangenberg; H. Kurz

J. Vac. Sci. Technol. A 24, 141–145 (2006) https://doi.org/10.1116/1.2141620

Abstract

View articletitled, Influence of excitonic singlet-triplet splitting on the photoluminescence of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Si</mi><mo>∕</mo><mi mathvariant="normal">Si</mi><msub><mi mathvariant="normal">O</mi><mn>2</mn></msub></mrow></math> multiple quantum wells fabricated by remote plasma-enhanced chemical-vapor deposition

Open the PDF for in another window

Optimization of multilayer wear-resistant thin films using finite element analysis on stiff and compliant substrates

R. K. Lakkaraju; F. Bobaru; S. L. Rohde

J. Vac. Sci. Technol. A 24, 146–155 (2006) https://doi.org/10.1116/1.2121750

Abstract

View articletitled, Optimization of multilayer wear-resistant thin films using finite element analysis on stiff and compliant substrates

Open the PDF for in another window

Conduction anisotropy in porous thin films with chevron microstructures

D. Vick; M. J. Brett

J. Vac. Sci. Technol. A 24, 156–164 (2006) https://doi.org/10.1116/1.2148413

Abstract

View articletitled, Conduction anisotropy in porous thin films with chevron microstructures

Open the PDF for in another window

Characterization of low dielectric constant plasma polymer films deposited by plasma-enhanced chemical vapor deposition using decamethyl-cyclopentasiloxane and cyclohexane as the precursors

Jaeyoung Yang; Sungwoo Lee; Hyoungsun Park; Donggeun Jung; Heeyeop Chae

J. Vac. Sci. Technol. A 24, 165–169 (2006) https://doi.org/10.1116/1.2148414

Abstract

View articletitled, Characterization of low dielectric constant plasma polymer films deposited by plasma-enhanced chemical vapor deposition using decamethyl-cyclopentasiloxane and cyclohexane as the precursors

Open the PDF for in another window

Effect of assistant rf field on phase composition of iron nitride film prepared by magnetron sputtering process

W. L. Li; F. Zheng; W. D. Fei

J. Vac. Sci. Technol. A 24, 170–173 (2006) https://doi.org/10.1116/1.2148415

Abstract

View articletitled, Effect of assistant rf field on phase composition of iron nitride film prepared by magnetron sputtering process

Open the PDF for in another window

Effects of Al content on grain growth of solid solution (Ti,Al)N films

Z.-J. Liu; Y. G. Shen

J. Vac. Sci. Technol. A 24, 174–177 (2006) https://doi.org/10.1116/1.2148416

Abstract

View articletitled, Effects of Al content on grain growth of solid solution (Ti,Al)N films

Open the PDF for in another window

Articles

Etching of ruthenium coatings in $O_{2}$ - and ${Cl}_{2}$ -containing plasmas

Free molecular background flow in a vacuum chamber equipped with two-sided pumps

Investigation of $Ni$ reaction with sputtered amorphous $SiGe$ thin film on ${SiO}_{2}$ substrate

Control of plasma flux composition incident on $TiN$ films during reactive magnetron sputtering and the effect on film microstructure

Plasma etching of $Hf O_{2}$ at elevated temperatures in chlorine-based chemistry

Effectiveness of dilute $H_{2}$ plasmas in removing boron from Si after etching of $Hf O_{2}$ films in $B {Cl}_{3}$ plasmas

Ion-surface interactions on $c - Si (001)$ at the radiofrequency-powered electrode in low-pressure plasmas: Ex situ spectroscopic ellipsometry and Monte Carlo simulation study

Optical depth profiling of strontium titanate and electro-optic lanthanum-modified lead zirconium titanate multilayer structures for active waveguide applications

Electrical properties of indium-tin oxide films deposited on nonheated substrates using a planar-magnetron sputtering system and a facing-targets sputtering system

SiC formation by $C_{60}$ molecules as a precursor: A synchrotron-radiation photoemission study of the carbonization process

Study of annealed Co thin films deposited by ion beam sputtering

Ge interactions on ${HfO}_{2}$ surfaces and kinetically driven patterning of Ge nanocrystals on ${HfO}_{2}$

Rapid thermal oxidation of Ge-rich ${Si}_{1 - x} {Ge}_{x}$ heterolayers

Ultrasensitive leak detection during ultrahigh vacuum evacuation by quadrupole mass spectrometer

How deposition parameters control growth dynamics of $n c - Si$ deposited by hot-wire chemical vapor deposition

Low-resistivity atomic-layer-deposited- $TaN$ with atomic-layer-deposited- $TaN$ /physical-vapor-deposited-Ta multilayer structure for multilevel Cu damascene interconnect

High-rate deposition of MgO by reactive ac pulsed magnetron sputtering in the transition mode

Spectroscopic study of gas and surface phase chemistries of $C F_{4}$ plasmas in an inductively coupled modified gaseous electronics conference reactor

In situ Fourier transform infrared characterization of the plasma chemistry in varying pulsed cycles of a 1,3-butadiene discharge in an inductively coupled gaseous electronics conference cell

Effects of $N_{2}$ ⁠, $O_{2}$ ⁠, and Ar plasma treatments on the removal of crystallized ${HfO}_{2}$ film

Influence of excitonic singlet-triplet splitting on the photoluminescence of $Si ∕ Si O_{2}$ multiple quantum wells fabricated by remote plasma-enhanced chemical-vapor deposition

Optimization of multilayer wear-resistant thin films using finite element analysis on stiff and compliant substrates

Conduction anisotropy in porous thin films with chevron microstructures

Characterization of low dielectric constant plasma polymer films deposited by plasma-enhanced chemical vapor deposition using decamethyl-cyclopentasiloxane and cyclohexane as the precursors

Effect of assistant rf field on phase composition of iron nitride film prepared by magnetron sputtering process

Effects of Al content on grain growth of solid solution (Ti,Al)N films

Submit your article

Sign up for alerts

RSS

Resources

Explore

pubs.aip.org

Connect with AIP Publishing

Issues

Articles

RSS

Resources

Explore

pubs.aip.org

Connect with AIP Publishing

This Feature Is Available To Subscribers Only