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REGULAR ARTICLES

In situ examination of tin oxide atomic layer deposition using quartz crystal microbalance and Fourier transform infrared techniques

X. Du; Y. Du; S. M. George

J. Vac. Sci. Technol. A 23, 581–588 (2005) https://doi.org/10.1116/1.1914810

View articletitled, In situ examination of tin oxide atomic layer deposition using quartz crystal microbalance and Fourier transform infrared techniques

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Characterization of nitrogen distribution in ${HfO}_{2}$ with low energy secondary ion mass spectrometry

Z. X. Jiang; K. Kim; J. Lerma; D. Sieloff; T. Y. Luo; J. Y. Yang; D. Triyoso; H. Tseng; P. Tobin; N. Ramani

J. Vac. Sci. Technol. A 23, 589–592 (2005) https://doi.org/10.1116/1.1914811

Abstract

View articletitled, Characterization of nitrogen distribution in <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi>HfO</mi><mn>2</mn></msub></mrow></math> with low energy secondary ion mass spectrometry

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Microstructure and nanohardness properties of Zr–Al–N and Zr–Cr–N thin films

R. Lamni; R. Sanjinés; M. Parlinska-Wojtan; A. Karimi; F. Lévy

J. Vac. Sci. Technol. A 23, 593–598 (2005) https://doi.org/10.1116/1.1924579

Abstract

View articletitled, Microstructure and nanohardness properties of Zr–Al–N and Zr–Cr–N thin films

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Inhibition of excess interface Si atom generation in 700 °C-grown pyrolytic-gas passivated ultrathin silicon oxide films

Hiroshi Yamada

J. Vac. Sci. Technol. A 23, 599–604 (2005) https://doi.org/10.1116/1.1924580

Abstract

View articletitled, Inhibition of excess interface Si atom generation in 700 °C-grown pyrolytic-gas passivated ultrathin silicon oxide films

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Enlargement of grain in poly-Si by adding Au in Ni-mediated crystallization of amorphous Si using a ${SiN}_{x}$ cap layer

Kyung Ho Kim; Jae Hwan Oh; Eun Hyun Kim; Jin Jang; Jeon Yeon Kang; Kyu Hwan Oh

J. Vac. Sci. Technol. A 23, 605–608 (2005) https://doi.org/10.1116/1.1924581

Abstract

View articletitled, Enlargement of grain in poly-Si by adding Au in Ni-mediated crystallization of amorphous Si using a <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi>SiN</mi><mi>x</mi></msub></mrow></math> cap layer

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Sb-induced reconstruction of the Si(112) surface

E. S. Cho; M. K. Kim; H. Hur; J. W. Park; J. Y. Baik; N. H. Kim; C. Y. Park; K. S. An

J. Vac. Sci. Technol. A 23, 609–612 (2005) https://doi.org/10.1116/1.1927104

Abstract

View articletitled, Sb-induced reconstruction of the Si(112) surface

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Adsorption and reactions of tetrabutoxysilane (TBOS) on Si(100)

Nakyung Lee; Kijung Yong; Hyun Suk Jeong; Chang Min Kim

J. Vac. Sci. Technol. A 23, 613–616 (2005) https://doi.org/10.1116/1.1927106

Abstract

View articletitled, Adsorption and reactions of tetrabutoxysilane (TBOS) on Si(100)

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Clean wurtzite InN surfaces prepared with atomic hydrogen

L. F. J. Piper; T. D. Veal; M. Walker; I. Mahboob; C. F. McConville; Hai Lu; W. J. Schaff

J. Vac. Sci. Technol. A 23, 617–620 (2005) https://doi.org/10.1116/1.1927108

Abstract

View articletitled, Clean wurtzite InN surfaces prepared with atomic hydrogen

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Microstructural evolution of AlN coatings synthesized by unbalanced magnetron sputtering

C. C. Wang; C. J. Lu; M. H. Shiao; F. S. Shieu

J. Vac. Sci. Technol. A 23, 621–627 (2005) https://doi.org/10.1116/1.1927532

Abstract

View articletitled, Microstructural evolution of AlN coatings synthesized by unbalanced magnetron sputtering

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Study on strain and piezoelectric polarization of AlN thin films grown on Si

Yongzhen Deng; Yuechan Kong; Youdou Zheng; Chunhong Zhou; Dongjuan Xi; Peng Chen; Shulin Gu; Bo Shen; Rong Zhang; Ping Han; Ruolian Jiang; Yi Shi

J. Vac. Sci. Technol. A 23, 628–630 (2005) https://doi.org/10.1116/1.1927533

Abstract

View articletitled, Study on strain and piezoelectric polarization of AlN thin films grown on Si

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Chromium diboride thin films by low temperature chemical vapor deposition

Sreenivas Jayaraman; Emily J. Klein; Yu Yang; Do Young Kim; Gregory S. Girolami; John R. Abelson

J. Vac. Sci. Technol. A 23, 631–633 (2005) https://doi.org/10.1116/1.1927534

Abstract

View articletitled, Chromium diboride thin films by low temperature chemical vapor deposition

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Studies of film deposition in fluorocarbon plasmas employing a small gap structure

Ling Zheng; Li Ling; Xuefeng Hua; Gottlieb S. Oehrlein; E. A. Hudson

J. Vac. Sci. Technol. A 23, 634–642 (2005) https://doi.org/10.1116/1.1931680

Abstract

View articletitled, Studies of film deposition in fluorocarbon plasmas employing a small gap structure

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Control of dissociation by varying oxygen pressure in noble gas admixtures for plasma processing

Kurt J. Taylor; George R. Tynan

J. Vac. Sci. Technol. A 23, 643–650 (2005) https://doi.org/10.1116/1.1931682

Abstract

View articletitled, Control of dissociation by varying oxygen pressure in noble gas admixtures for plasma processing

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Dual radio-frequency discharges: Effective frequency concept and effective frequency transition

H. C. Kim; J. K. Lee

J. Vac. Sci. Technol. A 23, 651–657 (2005) https://doi.org/10.1116/1.1931683

Abstract

View articletitled, Dual radio-frequency discharges: Effective frequency concept and effective frequency transition

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Effect of plating current density and annealing on impurities in electroplated Cu film

Chi-Wen Liu; Ying-Lang Wang; Ming-Shih Tsai; Hsien-Ping Feng; Shih-Chieh Chang; Gwo-Jen Hwang

J. Vac. Sci. Technol. A 23, 658–662 (2005) https://doi.org/10.1116/1.1931679

Abstract

View articletitled, Effect of plating current density and annealing on impurities in electroplated Cu film

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Study of optical recording bits by scanning surface potential microscopy

Sy-Hann Chen; Cheng-Wei Lin; Wei Chih Lin; Din Ping Tsai

J. Vac. Sci. Technol. A 23, 663–665 (2005) https://doi.org/10.1116/1.1943449

Abstract

View articletitled, Study of optical recording bits by scanning surface potential microscopy

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Surface modification of silicon-containing fluorocarbon films prepared by plasma-enhanced chemical vapor deposition

Yoonyoung Jin; Yohannes Desta; Jost Goettert; G. S. Lee; P. K. Ajmera

J. Vac. Sci. Technol. A 23, 666–670 (2005) https://doi.org/10.1116/1.1943450

Abstract

View articletitled, Surface modification of silicon-containing fluorocarbon films prepared by plasma-enhanced chemical vapor deposition

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High-energy ions and atoms sputtered and reflected from a magnetron source for deposition of magnetic thin films

Hiroki Matsui; Hirotaka Toyoda; Hideo Sugai

J. Vac. Sci. Technol. A 23, 671–675 (2005) https://doi.org/10.1116/1.1943452

Abstract

View articletitled, High-energy ions and atoms sputtered and reflected from a magnetron source for deposition of magnetic thin films

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Apparatus for laminar-turbulent transition in gases

L. D. Hinkle; A. Muriel

J. Vac. Sci. Technol. A 23, 676–680 (2005) https://doi.org/10.1116/1.1946709

Abstract

View articletitled, Apparatus for laminar-turbulent transition in gases

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Mechanical behavior and oxidation resistance of Cr(Al)N coatings

J. C. Sánchez-López; D. Martínez-Martínez; C. López-Cartes; A. Fernández; M. Brizuela; A. García-Luis; J. I. Oñate

J. Vac. Sci. Technol. A 23, 681–686 (2005) https://doi.org/10.1116/1.1946711

Abstract

View articletitled, Mechanical behavior and oxidation resistance of Cr(Al)N coatings

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ICP etching of III-nitride based laser structure with ${Cl}_{2}$ –Ar plasma assisted by Si coverplate material

Evgeny Zhirnov; Sergei Stepanov; Alan Gott; Wang Nang Wang; Y. G. Shreter; D. V. Tarkhin; N. I. Bochkareva

J. Vac. Sci. Technol. A 23, 687–692 (2005) https://doi.org/10.1116/1.1914812

Abstract

View articletitled, ICP etching of III-nitride based laser structure with <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi>Cl</mi><mn>2</mn></msub></mrow></math>–Ar plasma assisted by Si coverplate material

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Structural modifications and corrosion behavior of martensitic stainless steel nitrided by plasma immersion ion implantation

C. A. Figueroa; F. Alvarez; Z. Zhang; G. A. Collins; K. T. Short

J. Vac. Sci. Technol. A 23, 693–698 (2005) https://doi.org/10.1116/1.1931681

Abstract

View articletitled, Structural modifications and corrosion behavior of martensitic stainless steel nitrided by plasma immersion ion implantation

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Oxygen ion energy distribution: Role of ionization, resonant, and nonresonant charge-exchange collisions

N. Yu. Babaeva; J. K. Lee; J. W. Shon; E. A. Hudson

J. Vac. Sci. Technol. A 23, 699–704 (2005) https://doi.org/10.1116/1.1943451

Abstract

View articletitled, Oxygen ion energy distribution: Role of ionization, resonant, and nonresonant charge-exchange collisions

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Electronic and optical properties of ${Ta}_{1 - x} {Zr}_{x} N$ films: Experimental and ab initio studies

S. M. Aouadi; A. Bohnhoff; T. Amriou; R. T. Haasch; M. Williams; J. N. Hilfiker

J. Vac. Sci. Technol. A 23, 705–712 (2005) https://doi.org/10.1116/1.1946710

Abstract

View articletitled, Electronic and optical properties of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi mathvariant="normal">Ta</mi><mrow><mn>1</mn><mo>−</mo><mi>x</mi></mrow></msub><msub><mi mathvariant="normal">Zr</mi><mi>x</mi></msub><mi mathvariant="normal">N</mi></mrow></math> films: Experimental and ab initio studies

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Contribution of bottom-emitted radicals to the deposition of a film on the ${SiO}_{2}$ sidewall during ${CHF}_{3}$ plasma etching

Gyeo-Re Lee; Jae-Ho Min; Jin-Kwan Lee; Se-Koo Kang; Sang Heup Moon

J. Vac. Sci. Technol. A 23, 713–719 (2005) https://doi.org/10.1116/1.1946712

Abstract

View articletitled, Contribution of bottom-emitted radicals to the deposition of a film on the <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi>SiO</mi><mn>2</mn></msub></mrow></math> sidewall during <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi>CHF</mi><mn>3</mn></msub></mrow></math> plasma etching

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BRIEF REPORTS AND COMMENTS

Comment on “Plasma etching of high dielectric constant materials on silicon in halogen plasma chemistries” by L. Sha and J. P. Chang [J. Vac. Sci. Technol. A 22, 88 (2004)]

Luc Stafford; Joëlle Margot

J. Vac. Sci. Technol. A 23, 720–721 (2005) https://doi.org/10.1116/1.1938980

Extract

View articletitled, Comment on “Plasma etching of high dielectric constant materials on silicon in halogen plasma chemistries” by L. Sha and J. P. Chang [J. Vac. Sci. Technol. A 22, 88 (2004)]

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SHOP NOTES

Design for a kinematic, variable flux microcapillary array molecular beam doser

Gregory L. Fisher; Chad A. Meserole

J. Vac. Sci. Technol. A 23, 722–724 (2005) https://doi.org/10.1116/1.1927531

Abstract

View articletitled, Design for a kinematic, variable flux microcapillary array molecular beam doser

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Pressure compensation for a radiation-induced current caused in a vacuum gauge cable in the SPring-8 storage ring

Tamotsu Magome; Hiroshi Saeki

J. Vac. Sci. Technol. A 23, 725–726 (2005) https://doi.org/10.1116/1.1946708

Extract

View articletitled, Pressure compensation for a radiation-induced current caused in a vacuum gauge cable in the SPring-8 storage ring

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PAPERS FROM THE 51ST INTERNATIONAL SYMPOSIUM OF AVS

Applied Surface Science

Assembly of hydrothermally synthesized tin oxide nanocrystals

Naoto Shirahata; Atsushi Hozumi; Shuuichi Asakura; Akio Fuwa; Yoshio Sakka

J. Vac. Sci. Technol. A 23, 731–736 (2005) https://doi.org/10.1116/1.1863936

Abstract

View articletitled, Assembly of hydrothermally synthesized tin oxide nanocrystals

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Chemical mechanical planarization characteristics of $W O_{3}$ thin film for gas sensing

Yong-Jin Seo; Nam-Hoon Kim; Eui-Goo Chang; Jinseong Park; Pil-Ju Ko; Woo-Sun Lee

J. Vac. Sci. Technol. A 23, 737–740 (2005) https://doi.org/10.1116/1.1868612

Abstract

View articletitled, Chemical mechanical planarization characteristics of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">W</mi><msub><mi mathvariant="normal">O</mi><mn>3</mn></msub></mrow></math> thin film for gas sensing

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Algorithm for automatic x-ray photoelectron spectroscopy data processing and x-ray photoelectron spectroscopy imaging

Sven Tougaard

J. Vac. Sci. Technol. A 23, 741–745 (2005) https://doi.org/10.1116/1.1864053

Abstract

View articletitled, Algorithm for automatic x-ray photoelectron spectroscopy data processing and x-ray photoelectron spectroscopy imaging

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Maximum likelihood principal component analysis of time-of-flight secondary ion mass spectrometry spectral images

Michael R. Keenan

J. Vac. Sci. Technol. A 23, 746–750 (2005) https://doi.org/10.1116/1.1861935

Abstract

View articletitled, Maximum likelihood principal component analysis of time-of-flight secondary ion mass spectrometry spectral images

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Biomaterial Interfaces

Deposition of lipid bilayers on OH-density-controlled silicon dioxide surfaces

R. Tero; T. Urisu; H. Okawara; K. Nagayama

J. Vac. Sci. Technol. A 23, 751–754 (2005) https://doi.org/10.1116/1.1943455

Abstract

View articletitled, Deposition of lipid bilayers on OH-density-controlled silicon dioxide surfaces

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In situ formation of bioactive titanium coating using reactive plasma spraying

M. Inagaki; Y. Yokogawa; T. Kameyama

J. Vac. Sci. Technol. A 23, 755–760 (2005) https://doi.org/10.1116/1.1885024

Abstract

View articletitled, In situ formation of bioactive titanium coating using reactive plasma spraying

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Photoacoustic analysis of bone osteogenesis to different doses of laser irradiation

P. A. Lomelí Mejia; J. L. Jiménez Pérez; A. Cruz Orea; H. Villegas Castrejón; H. Lecona Butron; M. Meléndez Lira

J. Vac. Sci. Technol. A 23, 761–763 (2005) https://doi.org/10.1116/1.1927538

Abstract

View articletitled, Photoacoustic analysis of bone osteogenesis to different doses of laser irradiation

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Dielectrics

Comparison of forming gas effects on the ferroelectric properties between more-oriented and less-oriented $Pb ({Zr}_{0.52} {Ti}_{0.48}) O_{3}$ thin films

Eun Sun Lee; Hyun Woo Chung; Sung Hoon Lim; Sang Yeol Lee

J. Vac. Sci. Technol. A 23, 773–776 (2005) https://doi.org/10.1116/1.1913675

Abstract

View articletitled, Comparison of forming gas effects on the ferroelectric properties between more-oriented and less-oriented <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi>Pb</mi><mrow><mo>(</mo><msub><mi>Zr</mi><mn>0.52</mn></msub><msub><mi>Ti</mi><mn>0.48</mn></msub><mo>)</mo></mrow><msub><mi mathvariant="normal">O</mi><mn>3</mn></msub></mrow></math> thin films

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Electronic Materials and Devices

Effect of Mn composition of characterization of ${Zn}_{1 - x} {Mn}_{x} S$ epilayers

Y.-M. Yu; D. J. Kim; S. H. Eom; Y. D. Choi; T.-H. Kim; Byungsung O

J. Vac. Sci. Technol. A 23, 777–780 (2005) https://doi.org/10.1116/1.1868592

Abstract

View articletitled, Effect of Mn composition of characterization of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi mathvariant="normal">Zn</mi><mrow><mn>1</mn><mo>−</mo><mi>x</mi></mrow></msub><msub><mi mathvariant="normal">Mn</mi><mi>x</mi></msub><mi mathvariant="normal">S</mi></mrow></math> epilayers

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Magnetic Interfaces and Nanostructures

Low-temperature studies of magnetic phases of the interfacial layers for $Co ∕ Ge (100)$ and $Co ∕ Ge (111)$ films

J. S. Tsay; C. W. Su; C. H. Hwang; Y. D. Yao

J. Vac. Sci. Technol. A 23, 781–784 (2005) https://doi.org/10.1116/1.1861936

Abstract

View articletitled, Low-temperature studies of magnetic phases of the interfacial layers for <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Co</mi><mo>∕</mo><mi mathvariant="normal">Ge</mi><mrow><mo>(</mo><mn>100</mn><mo>)</mo></mrow></mrow></math> and <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Co</mi><mo>∕</mo><mi mathvariant="normal">Ge</mi><mrow><mo>(</mo><mn>111</mn><mo>)</mo></mrow></mrow></math> films

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Growth and characterization of epitaxial ${Fe}_{x} {Pt}_{100 - x}$ films on MgO(111)

P. Mani; V. V. Krishnamurthy; S. Maat; A. J. Kellock; J. L. Robertson; G. J. Mankey

J. Vac. Sci. Technol. A 23, 785–789 (2005) https://doi.org/10.1116/1.1885020

Abstract

View articletitled, Growth and characterization of epitaxial <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi>Fe</mi><mi>x</mi></msub><msub xmlns=""><mi>Pt</mi><mrow><mn mathvariant="italic">100</mn><mo>−</mo><mi>x</mi></mrow></msub></math> films on MgO(111)

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Structure and magnetism of ultrathin Co film grown on Pt(100)

Minghu Pan; Ke He; Lijuan Zhang; Jinfen Jia; Qikun Xue; Wondong Kim; Z. Q. Qiu

J. Vac. Sci. Technol. A 23, 790–795 (2005) https://doi.org/10.1116/1.1885025

Abstract

View articletitled, Structure and magnetism of ultrathin Co film grown on Pt(100)

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Magnetic response of nanostructured systems: A ferromagnetic resonance investigation

J. Lindner; U. Wiedwald; K. Baberschke; M. Farle

J. Vac. Sci. Technol. A 23, 796–803 (2005) https://doi.org/10.1116/1.4809520

Abstract

View articletitled, Magnetic response of nanostructured systems: A ferromagnetic resonance investigation

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MEMS and NEMS

Nanotribological characterization of fluoropolymer thin films for biomedical micro/nanoelectromechanical system applications

Kang Kug Lee; Bharat Bhushan; Derek Hansford

J. Vac. Sci. Technol. A 23, 804–810 (2005) https://doi.org/10.1116/1.1861939

Abstract

View articletitled, Nanotribological characterization of fluoropolymer thin films for biomedical micro/nanoelectromechanical system applications

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Microfabrication and nanomechanical characterization of polymer microelectromechanical system for biological applications

Guohua Wei; Bharat Bhushan; Nicholas Ferrell; Derek Hansford

J. Vac. Sci. Technol. A 23, 811–819 (2005) https://doi.org/10.1116/1.1861937

Abstract

View articletitled, Microfabrication and nanomechanical characterization of polymer microelectromechanical system for biological applications

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Piezoelectric and dielectric properties of $Pb (Zr, Ti) O_{3} - Pb (Mn, W, Sb, Nb) O_{3}$ with ${Ag}_{2} O$ addition

Hyun Woo Chung; Sung Hun Lim; Eun Sun Lee; Gun Hee Kim; Sang Yeol Lee

J. Vac. Sci. Technol. A 23, 820–823 (2005) https://doi.org/10.1116/1.1927535

Abstract

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Process integration for through-silicon vias

S. Spiesshoefer; Z. Rahman; G. Vangara; S. Polamreddy; S. Burkett; L. Schaper

J. Vac. Sci. Technol. A 23, 824–829 (2005) https://doi.org/10.1116/1.1864012

Abstract

View articletitled, Process integration for through-silicon vias

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Durability studies of micro/nanoelectromechanical systems materials, coatings and lubricants at high sliding velocities (up to $10 mm ∕ s$ ⁠) using a modified atomic force microscope

Nikhil S. Tambe; Bharat Bhushan

J. Vac. Sci. Technol. A 23, 830–835 (2005) https://doi.org/10.1116/1.1843821

Abstract

View articletitled, Durability studies of micro/nanoelectromechanical systems materials, coatings and lubricants at high sliding velocities (up to <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mn>10</mn><mspace width="0.3em"></mspace><mi>mm</mi><mo>∕</mo><mi mathvariant="normal">s</mi></mrow></math>⁠) using a modified atomic force microscope

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Tribological and wear studies of coatings fabricated by atomic layer deposition and by successive ionic layer adsorption and reaction for microelectromechanical devices

Corina Nistorica; Jun-Fu Liu; Igor Gory; George D. Skidmore; Fadziso M. Mantiziba; Bruce E. Gnade; Jiyoung Kim

J. Vac. Sci. Technol. A 23, 836–840 (2005) https://doi.org/10.1116/1.1885022

Abstract

View articletitled, Tribological and wear studies of coatings fabricated by atomic layer deposition and by successive ionic layer adsorption and reaction for microelectromechanical devices

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Frequency-tuning for control of parametrically resonant mass sensors

Wenhua Zhang; Kimberly L. Turner

J. Vac. Sci. Technol. A 23, 841–845 (2005) https://doi.org/10.1116/1.1924717

Abstract

View articletitled, Frequency-tuning for control of parametrically resonant mass sensors

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Nanometer Structures

SPM oxidation and parallel writing on zirconium nitride thin films

N. Farkas; J. R. Comer; G. Zhang; E. A. Evans; R. D. Ramsier; J. A. Dagata

J. Vac. Sci. Technol. A 23, 846–850 (2005) https://doi.org/10.1116/1.1864052

Abstract

View articletitled, SPM oxidation and parallel writing on zirconium nitride thin films

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Fabrication of ${NiSi}_{2}$ nanocrystals embedded in ${SiO}_{2}$ with memory effect by oxidation of the amorphous $Si ∕ Ni ∕ {SiO}_{2}$ structure

P. H. Yeh; H. H. Wu; C. H. Yu; L. J. Chen; P. T. Liu; C. H. Hsu; T. C. Chang

J. Vac. Sci. Technol. A 23, 851–855 (2005) https://doi.org/10.1116/1.1913678

Abstract

View articletitled, Fabrication of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi>NiSi</mi><mn>2</mn></msub></mrow></math> nanocrystals embedded in <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi>SiO</mi><mn>2</mn></msub></mrow></math> with memory effect by oxidation of the amorphous <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi>Si</mi><mo>∕</mo><mi>Ni</mi><mo>∕</mo><msub><mi>SiO</mi><mn>2</mn></msub></mrow></math> structure

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Optical properties of porous nanostructured $Y_{2} O_{3} : Eu$ thin films

P. C. P. Hrudey; M. Taschuk; Y. Y. Tsui; R. Fedosejevs; M. J. Brett

J. Vac. Sci. Technol. A 23, 856–861 (2005) https://doi.org/10.1116/1.1913676

Abstract

View articletitled, Optical properties of porous nanostructured <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi mathvariant="normal">Y</mi><mn>2</mn></msub><msub><mi mathvariant="normal">O</mi><mn>3</mn></msub><mo>:</mo><mi mathvariant="normal">Eu</mi></mrow></math> thin films

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Organic Films and Devices

Investigation of the interfacial reaction between metal and fluorine-contained polyimides

Ching-Yu Yang; J. S. Chen; S. L. C. Hsu

J. Vac. Sci. Technol. A 23, 862–868 (2005) https://doi.org/10.1116/1.1868632

Abstract

View articletitled, Investigation of the interfacial reaction between metal and fluorine-contained polyimides

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X-ray photoemission spectroscopy and Fourier transform infrared studies of dye molecule doped conducting polymer films

H. Kato; S. Takemura; O. Nishikawa; M. Taniguchi

J. Vac. Sci. Technol. A 23, 869–874 (2005) https://doi.org/10.1116/1.1914816

Abstract

View articletitled, X-ray photoemission spectroscopy and Fourier transform infrared studies of dye molecule doped conducting polymer films

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Organic polymer thin films deposited on silicon and copper by plasma-enhanced chemical vapor deposition method and characterization of their electrochemical and optical properties

I.-S. Bae; S.-H. Cho; Z. T. Park; J.-G. Kim; J. H. Boo

J. Vac. Sci. Technol. A 23, 875–879 (2005) https://doi.org/10.1116/1.1946714

Abstract

View articletitled, Organic polymer thin films deposited on silicon and copper by plasma-enhanced chemical vapor deposition method and characterization of their electrochemical and optical properties

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Study of the room temperature molecular memory observed from a nanowell device

N. Gergel; N. Majumdar; K. Keyvanfar; N. Swami; L. R. Harriott; J. C. Bean; Gyana Pattanaik; Giovanni Zangari; Y. Yao; J. M. Tour

J. Vac. Sci. Technol. A 23, 880–885 (2005) https://doi.org/10.1116/1.1931687

Abstract

View articletitled, Study of the room temperature molecular memory observed from a nanowell device

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Plasma Science and Technology

Photoresist stripping after low- $k$ dielectric layer patterning using axial magnetic field assisted reactive ion etching

Ho-Young Song; Chin-Woo Kim; Se-Geun Park; Jae-Kyoon Yang; Chang-Weon Lee

J. Vac. Sci. Technol. A 23, 886–889 (2005) https://doi.org/10.1116/1.1872013

Abstract

View articletitled, Photoresist stripping after low-<math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">k</mi></math> dielectric layer patterning using axial magnetic field assisted reactive ion etching

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Dry etching of $(Pb, Sr) {TiO}_{3}$ thin films using inductively coupled plasma

Gwan-Ha Kim; Jong-Sik Kim; Kyoung-Tae Kim; Dong-Pyo Kim; Chang-Il Kim

J. Vac. Sci. Technol. A 23, 890–893 (2005) https://doi.org/10.1116/1.1881653

Abstract

View articletitled, Dry etching of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mrow><mo>(</mo><mi mathvariant="normal">Pb</mi><mo>,</mo><mi mathvariant="normal">Sr</mi><mo>)</mo><msub><mrow><mi mathvariant="normal">TiO</mi></mrow><mn>3</mn></msub></mrow></mrow></math> thin films using inductively coupled plasma

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Dry etching of $(Ba, Sr) {TiO}_{3}$ thin films using an inductively coupled plasma

Gwan-Ha Kim; Kyoung-Tae Kim; Chang-II Kim

J. Vac. Sci. Technol. A 23, 894–897 (2005) https://doi.org/10.1116/1.1914814

Abstract

View articletitled, Dry etching of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mrow><mo>(</mo><mi>Ba</mi><mo>,</mo><mi>Sr</mi><mo>)</mo></mrow><msub><mi>TiO</mi><mn>3</mn></msub></mrow></math> thin films using an inductively coupled plasma

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Investigation of process window during dry etching of ZnO thin films by ${CH}_{4} - H_{2} - Ar$ inductively coupled plasma

Sun-Woong Na; Myoung Hun Shin; Yun Mo Chung; J. G. Han; N.-E. Lee

J. Vac. Sci. Technol. A 23, 898–904 (2005) https://doi.org/10.1116/1.1894420

Abstract

View articletitled, Investigation of process window during dry etching of ZnO thin films by <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi>CH</mi><mn>4</mn></msub><mo>–</mo><msub><mi mathvariant="normal">H</mi><mn>2</mn></msub><mo>–</mo><mi>Ar</mi></mrow></math> inductively coupled plasma

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Characterization of a modified Bosch-type process for silicon mold fabrication

S.-B. Jo; M.-W. Lee; S.-G. Lee; E.-H. Lee; S.-G. Park; B.-H. O

J. Vac. Sci. Technol. A 23, 905–910 (2005) https://doi.org/10.1116/1.1943467

Abstract

View articletitled, Characterization of a modified Bosch-type process for silicon mold fabrication

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Evaluation of silicon oxide cleaning using $F_{2}$ ∕Ar remote plasma processing

S. C. Kang; J. Y. Hwang; N.-E. Lee; K. S. Joo; G. H. Bae

J. Vac. Sci. Technol. A 23, 911–916 (2005) https://doi.org/10.1116/1.1885018

Abstract

View articletitled, Evaluation of silicon oxide cleaning using <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">F</mi><mn>2</mn></msub></math>∕Ar remote plasma processing

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Electron heating in capacitively coupled discharges and reactive gases

Gerhard Franz; Michael Klick

J. Vac. Sci. Technol. A 23, 917–921 (2005) https://doi.org/10.1116/1.1947201

Abstract

View articletitled, Electron heating in capacitively coupled discharges and reactive gases

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Measurements and consequences of nonuniform radio frequency plasma potential due to surface asymmetry in large area radio frequency capacitive reactors

L. Sansonnens; B. Strahm; L. Derendinger; A. A. Howling; Ch. Hollenstein; Ch. Ellert; J. P. M. Schmitt

J. Vac. Sci. Technol. A 23, 922–926 (2005) https://doi.org/10.1116/1.1868572

Abstract

View articletitled, Measurements and consequences of nonuniform radio frequency plasma potential due to surface asymmetry in large area radio frequency capacitive reactors

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Uniformity study in large-area showerhead reactors

R. Sobbia; L. Sansonnens; J. Bondkowski

J. Vac. Sci. Technol. A 23, 927–932 (2005) https://doi.org/10.1116/1.1868613

Abstract

View articletitled, Uniformity study in large-area showerhead reactors

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Characterization of the cold atmospheric plasma hybrid source

L. Bárdoš; H. Baránková

J. Vac. Sci. Technol. A 23, 933–937 (2005) https://doi.org/10.1116/1.1875173

Abstract

View articletitled, Characterization of the cold atmospheric plasma hybrid source

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Quantitative control of etching reactions on various SiOCH materials

T. Tatsumi; K. Urata; K. Nagahata; T. Saitoh; Y. Nogami; K. Shinohara

J. Vac. Sci. Technol. A 23, 938–946 (2005) https://doi.org/10.1116/1.1861938

Abstract

View articletitled, Quantitative control of etching reactions on various SiOCH materials

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Inductively coupled plasma etching of poly-SiC in ${SF}_{6}$ chemistries

S. H. Kuah; P. C. Wood

J. Vac. Sci. Technol. A 23, 947–952 (2005) https://doi.org/10.1116/1.1913682

Abstract

View articletitled, Inductively coupled plasma etching of poly-SiC in <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi>SF</mi><mn>6</mn></msub></mrow></math> chemistries

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Plasma Science and Technology I

Study on self-aligned contact oxide etching using $C_{5} F_{8} ∕ O_{2} ∕ Ar$ and $C_{5} F_{8} ∕ O_{2} ∕ Ar ∕ C H_{2} F_{2}$ plasma

Seung-bum Kim; Dong-goo Choi; Tea-eun Hong; Tae-su Park; Dong-sauk Kim; Yong-wook Song; Chang-il Kim

J. Vac. Sci. Technol. A 23, 953–958 (2005) https://doi.org/10.1116/1.1947797

Abstract

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Plasma Science and Technology II

Hot hollow cathode diffuse arc deposition of chromium nitride films

H. Baránková; L. Bárdoš; L.-E. Gustavsson

J. Vac. Sci. Technol. A 23, 959–963 (2005) https://doi.org/10.1116/1.1914813

Abstract

View articletitled, Hot hollow cathode diffuse arc deposition of chromium nitride films

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Investigation of etching properties of metal nitride/high- $k$ gate stacks using inductively coupled plasma

Wan Sik Hwang; Jinghao Chen; Won Jong Yoo; Vladimir Bliznetsov

J. Vac. Sci. Technol. A 23, 964–970 (2005) https://doi.org/10.1116/1.1927536

Abstract

View articletitled, Investigation of etching properties of metal nitride/high-<math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">k</mi></math> gate stacks using inductively coupled plasma

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Transparent hybrid inorganic/organic barrier coatings for plastic organic light-emitting diode substrates

Tae Won Kim; Min Yan; Ahmet Gün Erlat; Paul A. McConnelee; Mathew Pellow; John Deluca; Thomas P. Feist; Anil R. Duggal; Marc Schaepkens

J. Vac. Sci. Technol. A 23, 971–977 (2005) https://doi.org/10.1116/1.1913680

Abstract

View articletitled, Transparent hybrid inorganic/organic barrier coatings for plastic organic light-emitting diode substrates

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Semiconductors

Blue photoluminescence of Si nanocrystallites embedded in silicon oxide

Gun Hee Kim; Jong Hoon Kim; Kyung Ah Jeon; Sang Yeol Lee

J. Vac. Sci. Technol. A 23, 978–981 (2005) https://doi.org/10.1116/1.1871992

Abstract

View articletitled, Blue photoluminescence of Si nanocrystallites embedded in silicon oxide

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Realization of ${Mg}_{(x = 0.15)} {Zn}_{(1 - x = 0.85)} O$ -based metal-semiconductor-metal UV detector on quartz and sapphire

S. S. Hullavarad; S. Dhar; B. Varughese; I. Takeuchi; T. Venkatesan; R. D. Vispute

J. Vac. Sci. Technol. A 23, 982–985 (2005) https://doi.org/10.1116/1.1913677

Abstract

View articletitled, Realization of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi>Mg</mi><mrow><mo>(</mo><mi>x</mi><mo>=</mo><mn>0.15</mn><mo>)</mo></mrow></msub><msub><mi>Zn</mi><mrow><mo>(</mo><mn>1</mn><mo>−</mo><mi>x</mi><mo>=</mo><mn>0.85</mn><mo>)</mo></mrow></msub><mi mathvariant="normal">O</mi></mrow></math>-based metal-semiconductor-metal UV detector on quartz and sapphire

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Surface Engineering

Stress reduction in sputter deposited films using nanostructured compliant layers by high working-gas pressures

Tansel Karabacak; Jay. J. Senkevich; Gwo-Ching Wang; Toh-Ming Lu

J. Vac. Sci. Technol. A 23, 986–990 (2005) https://doi.org/10.1116/1.1861940

Abstract

View articletitled, Stress reduction in sputter deposited films using nanostructured compliant layers by high working-gas pressures

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Electrochemical characterization of plasma polymer coatings in corrosion protection of aluminum alloys

Yenfong Chan; Qingsong Yu

J. Vac. Sci. Technol. A 23, 991–997 (2005) https://doi.org/10.1116/1.1924716

Abstract

View articletitled, Electrochemical characterization of plasma polymer coatings in corrosion protection of aluminum alloys

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Growth and characterization of nanocrystalline zirconium nitride–inconel structures

S. M. Aouadi; T. Maeruf; M. Sodergren; D. M. Mihut; S. L. Rohde; J. Xu; S. R. Mishra

J. Vac. Sci. Technol. A 23, 998–1005 (2005) https://doi.org/10.1116/1.1914817

Abstract

View articletitled, Growth and characterization of nanocrystalline zirconium nitride–inconel structures

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Oxidation behavior of titanium nitride films

Hong-Ying Chen; Fu-Hsing Lu

J. Vac. Sci. Technol. A 23, 1006–1009 (2005) https://doi.org/10.1116/1.1914815

Abstract

View articletitled, Oxidation behavior of titanium nitride films

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Characterizations of the surfaces of shocked-Bi–Pb–Sr–Ca–Cu–O particles for a magnetic sensor

H. Kezuka; K. Yamagata; M. Itoh; T. Suzuki; M. Kikuchi; T. Atou; M. Kawasaki; K. Fukuoka

J. Vac. Sci. Technol. A 23, 1010–1012 (2005) https://doi.org/10.1116/1.1897699

Abstract

View articletitled, Characterizations of the surfaces of shocked-Bi–Pb–Sr–Ca–Cu–O particles for a magnetic sensor

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Surface Science

Temperature programmed desorption study of $C_{6} H_{12} ∕ Zr (0001)$

N. Stojilovic; J. C. Tokash; S. P. McGinnis; R. D. Ramsier

J. Vac. Sci. Technol. A 23, 1013–1017 (2005) https://doi.org/10.1116/1.1864054

Abstract

View articletitled, Temperature programmed desorption study of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi mathvariant="normal">C</mi><mn>6</mn></msub><msub><mi mathvariant="normal">H</mi><mn>12</mn></msub><mo>∕</mo><mi mathvariant="normal">Zr</mi><mrow><mo>(</mo><mn>0001</mn><mo>)</mo></mrow></mrow></math>

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Plasma-based ion implantation sterilization technique and ion energy estimation

T. Tanaka; S. Watanabe; K. Shibahara; S. Yokoyama; T. Takagi

J. Vac. Sci. Technol. A 23, 1018–1021 (2005) https://doi.org/10.1116/1.1943468

Abstract

View articletitled, Plasma-based ion implantation sterilization technique and ion energy estimation

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Selective detection of Cr(VI) using a microcantilever electrode coated with a self-assembled monolayer

F. Tian; V. I. Boiadjiev; L. A. Pinnaduwage; G. M. Brown; T. Thundat

J. Vac. Sci. Technol. A 23, 1022–1028 (2005) https://doi.org/10.1116/1.1943456

Abstract

View articletitled, Selective detection of Cr(VI) using a microcantilever electrode coated with a self-assembled monolayer

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Site-selective electroless plating on amino-terminated diamond substrate patterned by 126 nm vacuum ultraviolet light lithography

Atsushi Hozumi; Shuichi Asakura; Akio Fuwa; Naoto Shirahata

J. Vac. Sci. Technol. A 23, 1029–1033 (2005) https://doi.org/10.1116/1.1863937

Abstract

View articletitled, Site-selective electroless plating on amino-terminated diamond substrate patterned by 126 nm vacuum ultraviolet light lithography

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Nanotribological effects of hair care products and environment on human hair using atomic force microscopy

Carmen LaTorre; Bharat Bhushan

J. Vac. Sci. Technol. A 23, 1034–1045 (2005) https://doi.org/10.1116/1.1863992

Abstract

View articletitled, Nanotribological effects of hair care products and environment on human hair using atomic force microscopy

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Magnetocrystalline anisotropy in glancing angle deposited Permalloy nanowire arrays

H. Alouach; H. Fujiwara; G. J. Mankey

J. Vac. Sci. Technol. A 23, 1046–1050 (2005) https://doi.org/10.1116/1.1938978

Abstract

View articletitled, Magnetocrystalline anisotropy in glancing angle deposited Permalloy nanowire arrays

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Reactivity of NO over K-deposited Pd(111) and surface structure of the catalyst

I. Nakamura; H. Hamada; T. Fujitani

J. Vac. Sci. Technol. A 23, 1051–1054 (2005) https://doi.org/10.1116/1.1863952

Abstract

View articletitled, Reactivity of NO over K-deposited Pd(111) and surface structure of the catalyst

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Epitaxial iron oxide growth on a stepped Pt(9 11 11) surface

Guido Ketteler; Wolfgang Ranke

J. Vac. Sci. Technol. A 23, 1055–1060 (2005) https://doi.org/10.1116/1.1889441

Abstract

View articletitled, Epitaxial iron oxide growth on a stepped Pt(9 11 11) surface

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Deconvolution of the ${Co}_{3} O_{4} (110)$ Fuchs–Kliewer phonon spectrum

E. M. Marsh; S. C. Petitto; G. S. Harbison; K. W. Wulser; M. A. Langell

J. Vac. Sci. Technol. A 23, 1061–1066 (2005) https://doi.org/10.1116/1.1863972

Abstract

View articletitled, Deconvolution of the <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi>Co</mi><mn>3</mn></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mn>4</mn></msub><mrow xmlns=""><mo>(</mo><mn>110</mn><mo>)</mo></mrow></math> Fuchs–Kliewer phonon spectrum

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Spontaneous growth of Ag and Pb nanopucks on electronic patterns of 2D Pb quantum islands

Y. P. Chiu; H. Y. Lin; T. Y. Fu; C. S. Chang; Tien T. Tsong

J. Vac. Sci. Technol. A 23, 1067–1071 (2005) https://doi.org/10.1116/1.1897698

Abstract

View articletitled, Spontaneous growth of Ag and Pb nanopucks on electronic patterns of 2D Pb quantum islands

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Origin of the interface dipole at interfaces between undoped organic semiconductors and metals

M. Knupfer; G. Paasch

J. Vac. Sci. Technol. A 23, 1072–1077 (2005) https://doi.org/10.1116/1.1885021

Abstract

View articletitled, Origin of the interface dipole at interfaces between undoped organic semiconductors and metals

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Surface Science I

Carbon monoxide reaction with ${UO}_{2} (111)$ single crystal surfaces: A theoretical and experimental study

S. D. Senanayake; A. Soon; A. Kohlmeyer; T. Söhnel; H. Idriss

J. Vac. Sci. Technol. A 23, 1078–1084 (2005) https://doi.org/10.1116/1.1881637

Abstract

View articletitled, Carbon monoxide reaction with <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mrow><mi mathvariant="normal">UO</mi></mrow><mn>2</mn></msub><mo>(</mo><mn>111</mn><mo>)</mo></mrow></math> single crystal surfaces: A theoretical and experimental study

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Vibrationally promoted emission of electrons from low work function surfaces: Oxygen and Cs surface coverage dependence

Jason D. White; Jun Chen; Daniel Matsiev; Daniel J. Auerbach; Alec M. Wodtke

J. Vac. Sci. Technol. A 23, 1085–1089 (2005) https://doi.org/10.1116/1.1861942

Abstract

View articletitled, Vibrationally promoted emission of electrons from low work function surfaces: Oxygen and Cs surface coverage dependence

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Surface Science II

Current research and development topics on gas cluster ion-beam processes

Isao Yamada; Noriaki Toyoda

J. Vac. Sci. Technol. A 23, 1090–1099 (2005) https://doi.org/10.1116/1.1894419

Abstract

View articletitled, Current research and development topics on gas cluster ion-beam processes

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Surface Science III

Chlorination of hydrogen-terminated silicon (111) surfaces

Sandrine Rivillon; Yves J. Chabal; Lauren J. Webb; David J. Michalak; Nathan S. Lewis; Mathew D. Halls; Krishnan Raghavachari

J. Vac. Sci. Technol. A 23, 1100–1106 (2005) https://doi.org/10.1116/1.1861941

Abstract

View articletitled, Chlorination of hydrogen-terminated silicon (111) surfaces

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Thin Films

Effects of surface chemistry on ALD ${Ta}_{3} N_{5}$ barrier formation on low- $k$ dielectrics

J. Liu; J. Bao; M. Scharnberg; W. C. Kim; P. S. Ho; R. Laxman

J. Vac. Sci. Technol. A 23, 1107–1113 (2005) https://doi.org/10.1116/1.1872012

Abstract

View articletitled, Effects of surface chemistry on ALD <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi>Ta</mi><mn>3</mn></msub><msub><mi mathvariant="normal">N</mi><mn>5</mn></msub></mrow></math> barrier formation on low-<math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">k</mi></math> dielectrics

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Tailored stoichiometries of silicon carbonitride thin films prepared by combined radio frequency magnetron sputtering and ion beam synthesis

M. Bruns; U. Geckle; V. Trouillet; M. Rudolphi; H. Baumann

J. Vac. Sci. Technol. A 23, 1114–1119 (2005) https://doi.org/10.1116/1.1946713

Abstract

View articletitled, Tailored stoichiometries of silicon carbonitride thin films prepared by combined radio frequency magnetron sputtering and ion beam synthesis

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Photoluminescence behavior of ${Eu}^{3 +}$ activated ${Sr}_{2} {SiO}_{4}$ thin-film phosphors grown by pulsed-laser deposition

J. H. Jeong; B. K. Moon; J. S. Bae; S. S. Yi; J. H. Kim; H. L. Park

J. Vac. Sci. Technol. A 23, 1120–1123 (2005) https://doi.org/10.1116/1.1946728

Abstract

View articletitled, Photoluminescence behavior of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msup><mi>Eu</mi><mrow><mn>3</mn><mo>+</mo></mrow></msup></mrow></math> activated <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi>Sr</mi><mn>2</mn></msub><msub><mi>SiO</mi><mn>4</mn></msub></mrow></math> thin-film phosphors grown by pulsed-laser deposition

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Luminescence characteristics of Eu-doped ${GdVO}_{4}$ thin films grown by pulsed-laser deposition

S. S. Yi; J. S. Bae; K. S. Shim; B. K. Moon; J. H. Jeong; S. T. Chung; J. H. Kim

J. Vac. Sci. Technol. A 23, 1124–1127 (2005) https://doi.org/10.1116/1.1943454

Abstract

View articletitled, Luminescence characteristics of Eu-doped <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi>GdVO</mi><mn>4</mn></msub></math> thin films grown by pulsed-laser deposition

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Preparation of transparent and conductive multicomponent Zn–In–Sn oxide thin films by vacuum arc plasma evaporation

Tadatsugu Minami; Satoshi Tsukada; Youhei Minamino; Toshihiro Miyata

J. Vac. Sci. Technol. A 23, 1128–1132 (2005) https://doi.org/10.1116/1.1946727

Abstract

View articletitled, Preparation of transparent and conductive multicomponent Zn–In–Sn oxide thin films by vacuum arc plasma evaporation

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Removal characteristics of hillock on ${SnO}_{2}$ thin film by chemical mechanical polishing process

Yong-Jin Seo; Nam-Hoon Kim; Eui-Goo Chang; Jinseong Park; Gwon-Woo Choi; Woo-Sun Lee

J. Vac. Sci. Technol. A 23, 1133–1136 (2005) https://doi.org/10.1116/1.1931707

Abstract

View articletitled, Removal characteristics of hillock on <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi>SnO</mi><mn>2</mn></msub></mrow></math> thin film by chemical mechanical polishing process

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Fabrication of a Cu nanodot array based on electroless plating employing a diblock copolymer nanotemplate

Shuichi Asakura; Atsushi Hozumi; Akio Fuwa

J. Vac. Sci. Technol. A 23, 1137–1140 (2005) https://doi.org/10.1116/1.1885023

Abstract

View articletitled, Fabrication of a Cu nanodot array based on electroless plating employing a diblock copolymer nanotemplate

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Growth of strained Si on high-quality relaxed ${Si}_{1 - x} {Ge}_{x}$ with an intermediate ${Si}_{1 - y} C_{y}$ layer

S. W. Lee; Y. L. Chueh; L. J. Chen; L. J. Chou; P. S. Chen; M. H. Lee; M.-J. Tsai; C. W. Liu

J. Vac. Sci. Technol. A 23, 1141–1145 (2005) https://doi.org/10.1116/1.1913679

Abstract

View articletitled, Growth of strained Si on high-quality relaxed <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi>Si</mi><mrow><mn>1</mn><mo>−</mo><mi>x</mi></mrow></msub><msub><mi>Ge</mi><mi>x</mi></msub></mrow></math> with an intermediate <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi>Si</mi><mrow><mn>1</mn><mo>−</mo><mi>y</mi></mrow></msub><msub><mi mathvariant="normal">C</mi><mi>y</mi></msub></mrow></math> layer

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Area-selective assembly of high crystalline tin-doped–indium–oxide particles onto monolayer template

Naoto Shirahata; Yoshio Sakka; Tetsuo Uchikoshi; Atsushi Hozumi

J. Vac. Sci. Technol. A 23, 1146–1151 (2005) https://doi.org/10.1116/1.1927537

Abstract

View articletitled, Area-selective assembly of high crystalline tin-doped–indium–oxide particles onto monolayer template

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Comparison of the agglomeration behavior of thin metallic films on $Si O_{2}$

P. R. Gadkari; A. P. Warren; R. M. Todi; R. V. Petrova; K. R. Coffey

J. Vac. Sci. Technol. A 23, 1152–1161 (2005) https://doi.org/10.1116/1.1861943

Abstract

View articletitled, Comparison of the agglomeration behavior of thin metallic films on <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Si</mi><msub><mi mathvariant="normal">O</mi><mn>2</mn></msub></mrow></math>

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Relationship between the microstructure and the discharge characteristics of MgO protecting layer in alternating current plasma display panels

Sun Young Park; Mi Jung Lee; Hyeong Joon Kim; Sung Hwan Moon; Soo Gil Kim; Jong Kuk Kim

J. Vac. Sci. Technol. A 23, 1162–1166 (2005) https://doi.org/10.1116/1.1947200

Abstract

View articletitled, Relationship between the microstructure and the discharge characteristics of MgO protecting layer in alternating current plasma display panels

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Structural, electrical, and optical properties of transparent conductive ${In}_{2} O_{3} - {SnO}_{2}$ films

Yasushi Sato; Ryo Tokumaru; Eriko Nishimura; Pung-keug Song; Yuzo Shigesato; Kentaro Utsumi; Hitoshi Iigusa

J. Vac. Sci. Technol. A 23, 1167–1172 (2005) https://doi.org/10.1116/1.1894421

Abstract

View articletitled, Structural, electrical, and optical properties of transparent conductive <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi>In</mi><mn>2</mn></msub><msub><mi mathvariant="normal">O</mi><mn>3</mn></msub><mo>–</mo><msub><mi>SnO</mi><mn>2</mn></msub></mrow></math> films

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Optimization of process parameters to achieve high quality as-deposited indium-tin oxide films for display applications

Subhadra Gupta; Earl Ada

J. Vac. Sci. Technol. A 23, 1173–1179 (2005) https://doi.org/10.1116/1.1875152

Abstract

View articletitled, Optimization of process parameters to achieve high quality as-deposited indium-tin oxide films for display applications

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Analysis on thermal properties of tin doped indium oxide films by picosecond thermoreflectance measurement

Takashi Yagi; Kimiaki Tamano; Yasushi Sato; Naoyuki Taketoshi; Tetsuya Baba; Yuzo Shigesato

J. Vac. Sci. Technol. A 23, 1180–1186 (2005) https://doi.org/10.1116/1.1872014

Abstract

View articletitled, Analysis on thermal properties of tin doped indium oxide films by picosecond thermoreflectance measurement

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Influence of sputtering parameter on the optical and electrical properties of zinc-doped indium oxide thin films

Han-Chang Pan; Ming-Hua Shiao; Chien-Ying Su; Chien-Nan Hsiao

J. Vac. Sci. Technol. A 23, 1187–1191 (2005) https://doi.org/10.1116/1.1924473

Abstract

View articletitled, Influence of sputtering parameter on the optical and electrical properties of zinc-doped indium oxide thin films

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Effect of stress and density on the electrical and physical properties of MgO protecting layer for alternating current-plasma display panels

Mi Jung Lee; Sun Young Park; Soo Gil Kim; Hyeong Joon Kim; Sung Hwan Moon; Jong Kuk Kim

J. Vac. Sci. Technol. A 23, 1192–1196 (2005) https://doi.org/10.1116/1.1924472

Abstract

View articletitled, Effect of stress and density on the electrical and physical properties of MgO protecting layer for alternating current-plasma display panels

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Study of molybdenum back contact layer to achieve adherent and efficient CIGS2 absorber thin-film solar cells

Ankur A. Kadam; Neelkanth G. Dhere; Paul Holloway; Evan Law

J. Vac. Sci. Technol. A 23, 1197–1201 (2005) https://doi.org/10.1116/1.1889440

Abstract

View articletitled, Study of molybdenum back contact layer to achieve adherent and efficient CIGS2 absorber thin-film solar cells

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Formation of chalcogen containing plasmas and their use in the synthesis of photovoltaic absorbers

S. Kosaraju; I. Repins; C. A. Wolden

J. Vac. Sci. Technol. A 23, 1202–1207 (2005) https://doi.org/10.1116/1.1924471

Abstract

View articletitled, Formation of chalcogen containing plasmas and their use in the synthesis of photovoltaic absorbers

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Thin-film photovoltaics

Neelkanth G. Dhere; Ramesh G. Dhere

J. Vac. Sci. Technol. A 23, 1208–1214 (2005) https://doi.org/10.1116/1.1897697

Abstract

View articletitled, Thin-film photovoltaics

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Transparent and semitransparent conducting film deposition by reactive-environment, hollow cathode sputtering

A. E. Delahoy; S. Y. Guo

J. Vac. Sci. Technol. A 23, 1215–1220 (2005) https://doi.org/10.1116/1.1894423

Abstract

View articletitled, Transparent and semitransparent conducting film deposition by reactive-environment, hollow cathode sputtering

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Real-time optical monitoring of ammonia flow and decomposition kinetics under high-pressure chemical vapor deposition conditions

Nikolaus Dietz; Martin Straßburg; Vincent Woods

J. Vac. Sci. Technol. A 23, 1221–1227 (2005) https://doi.org/10.1116/1.1894422

Abstract

View articletitled, Real-time optical monitoring of ammonia flow and decomposition kinetics under high-pressure chemical vapor deposition conditions

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Optimal control on composition and optical properties of silicon oxynitride thin films

E. C. Samano; J. Camacho; R. Machorro

J. Vac. Sci. Technol. A 23, 1228–1233 (2005) https://doi.org/10.1116/1.1864032

Abstract

View articletitled, Optimal control on composition and optical properties of silicon oxynitride thin films

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Thin Films I

Structural and mechanical properties of dendrimer-mediated thin films

Fengting T. Xu; Sean M. Thaler; John A. Barnard

J. Vac. Sci. Technol. A 23, 1234–1237 (2005) https://doi.org/10.1116/1.1861934

Abstract

View articletitled, Structural and mechanical properties of dendrimer-mediated thin films

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Thin Films II

Atomic layer deposition of nickel oxide films using $Ni {(dmamp)}_{2}$ and water

Taek Seung Yang; Wontae Cho; Minchan Kim; Ki-Seok An; Taek-Mo Chung; Chang Gyoun Kim; Yunsoo Kim

J. Vac. Sci. Technol. A 23, 1238–1243 (2005) https://doi.org/10.1116/1.1875172

Abstract

View articletitled, Atomic layer deposition of nickel oxide films using <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi>Ni</mi><mrow><msub><mrow><mo>(</mo><mi>dmamp</mi><mo>)</mo></mrow><mn>2</mn></msub></mrow></mrow></math> and water

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Vacuum Technology

John Ambrose Fleming and the beginning of electronics

H. F. Dylla; Steven T. Corneliussen

J. Vac. Sci. Technol. A 23, 1244–1251 (2005) https://doi.org/10.1116/1.1881652

Abstract

View articletitled, John Ambrose Fleming and the beginning of electronics

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Vacuum and the electron tube industry

P. A. Redhead

J. Vac. Sci. Technol. A 23, 1252–1259 (2005) https://doi.org/10.1116/1.1843822

Abstract

View articletitled, Vacuum and the electron tube industry

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Vacuum microelectronic devices and vacuum requirements

Talmage Tyler; Olga A. Shenderova; Gary E. McGuire

J. Vac. Sci. Technol. A 23, 1260–1266 (2005) https://doi.org/10.1116/1.1885019

Abstract

View articletitled, Vacuum microelectronic devices and vacuum requirements

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Real time quantitative diagnostic technique for measuring chemical vapor deposition precursors

Ju-Young Yun; Kwang-Hwa Chung; Doo-Kyung Moon

J. Vac. Sci. Technol. A 23, 1267–1269 (2005) https://doi.org/10.1116/1.1913681

Abstract

View articletitled, Real time quantitative diagnostic technique for measuring chemical vapor deposition precursors

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Overview of the Spallation Neutron Source Vacuum Systems

P. Ladd; J. Crandall; M. Hechler; S. Henderson; R. Kersevan; G. Murdoch; J. Tang; The SNS ASD Vacuum Team

J. Vac. Sci. Technol. A 23, 1270–1275 (2005) https://doi.org/10.1116/1.1947202

Abstract

View articletitled, Overview of the Spallation Neutron Source Vacuum Systems

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Materials Solutions for Cooling Technology Topical Conference and Thermal Transport in Thin Films and Nanostructured Materials

Micro- and nanoscale thermal phenomena in thin-film magnetic recording heads

Y. Sungtaek Ju

J. Vac. Sci. Technol. A 23, 1276–1283 (2005) https://doi.org/10.1116/1.1943453

Abstract

View articletitled, Micro- and nanoscale thermal phenomena in thin-film magnetic recording heads

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Nano/MEMS Manufacturing and Plasmas

Characterization of polycrystalline AlN films using variable-angle spectroscopic ellipsometry

Li-Peng Wang; Dong S. Shim; Qing Ma; Valluri R. Rao; Eyal Ginsburg; Alexander Talalyevsky

J. Vac. Sci. Technol. A 23, 1284–1289 (2005) https://doi.org/10.1116/1.1875192

Abstract

View articletitled, Characterization of polycrystalline AlN films using variable-angle spectroscopic ellipsometry

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Papers from the 51st International Symposium of AVS

Dielectrics

$TiN ∕ {Ta}_{2} O_{5} ∕ PE - SiN ∕ TiN$ metal-insulator-metal capacitor for radio frequency and mixed signal integrated circuit applications

Y. S. Chung; K. S. Kim; Y. S. Ryu; D. Lee; S. B. Hwang; C.-S. Shin; S. K. Park; J. G. Lee

J. Vac. Sci. Technol. A 23, 764–767 (2005) https://doi.org/10.1116/1.1864055

Abstract

View articletitled, <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">TiN</mi><mo>∕</mo><msub><mrow><mi mathvariant="normal">Ta</mi></mrow><mn>2</mn></msub><msub><mi mathvariant="normal">O</mi><mn>5</mn></msub><mo>∕</mo><mi mathvariant="normal">PE</mi><mo>–</mo><mi mathvariant="normal">SiN</mi><mo>∕</mo><mi mathvariant="normal">TiN</mi></mrow></math> metal-insulator-metal capacitor for radio frequency and mixed signal integrated circuit applications

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Structural and optical properties of erbium-doped ${Ba}_{0.7} {Sr}_{0.3} Ti O_{3}$ thin films

Shou-Yi Kuo; Wen-Feng Hsieh

J. Vac. Sci. Technol. A 23, 768–772 (2005) https://doi.org/10.1116/1.1938979

Abstract

View articletitled, Structural and optical properties of erbium-doped <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi mathvariant="normal">Ba</mi><mn>0.7</mn></msub><msub><mi mathvariant="normal">Sr</mi><mn>0.3</mn></msub><mi mathvariant="normal">Ti</mi><msub><mi mathvariant="normal">O</mi><mn>3</mn></msub></mrow></math> thin films

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LETTERS

Plasma-assisted atomic layer deposition of TiN monitored by in situ spectroscopic ellipsometry

S. B. S. Heil; E. Langereis; A. Kemmeren; F. Roozeboom; M. C. M. van de Sanden; W. M. M. Kessels

J. Vac. Sci. Technol. A 23, L5–L8 (2005) https://doi.org/10.1116/1.1938981

Abstract

View articletitled, Plasma-assisted atomic layer deposition of TiN monitored by in situ spectroscopic ellipsometry

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