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Volume 23, Issue 3

May 2005

ISSN 0734-2101

EISSN 1520-8559

CRITICAL REVIEWS

Comprehensive analysis of chlorine-containing capacitively coupled plasmas

Gerhard Franz

J. Vac. Sci. Technol. A 23, 369–387 (2005) https://doi.org/10.1116/1.1894725

Abstract

View articletitled, Comprehensive analysis of chlorine-containing capacitively coupled plasmas

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ARTICLES

Removal of particles during plasma processes using a collector based on the properties of particles suspended in the plasma

Heru Setyawan; Manabu Shimada; Yutaka Hayashi; Kikuo Okuyama

J. Vac. Sci. Technol. A 23, 388–393 (2005) https://doi.org/10.1116/1.1874134

Abstract

View articletitled, Removal of particles during plasma processes using a collector based on the properties of particles suspended in the plasma

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Low temperature, fast deposition of metallic titanium nitride films using plasma activated reactive evaporation

J. A. Montes de Oca Valero; Y. Le Petitcorps; J. P. Manaud; G. Chollon; F. J. Carrillo Romo; A. López M.

J. Vac. Sci. Technol. A 23, 394–400 (2005) https://doi.org/10.1116/1.1874152

Abstract

View articletitled, Low temperature, fast deposition of metallic titanium nitride films using plasma activated reactive evaporation

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Amorphous transparent conductive oxide films of ${In}_{2} O_{3}$ -ZnO with additional ${Al}_{2} O_{3}$ impurities

K. Tominaga; H. Fukumoto; K. Kondou; Y. Hayashi; K. Murai; T. Moriga; I. Nakabayashi

J. Vac. Sci. Technol. A 23, 401–407 (2005) https://doi.org/10.1116/1.1874172

Abstract

View articletitled, Amorphous transparent conductive oxide films of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi>In</mi><mn>2</mn></msub><msub><mi mathvariant="normal">O</mi><mn>3</mn></msub></mrow></math>-ZnO with additional <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi>Al</mi><mn>2</mn></msub><msub><mi mathvariant="normal">O</mi><mn>3</mn></msub></mrow></math> impurities

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Role of $C_{2} F_{4}$ ⁠, ${CF}_{2}$ ⁠, and ions in $C_{4} F_{8} ∕ Ar$ plasma discharges under active oxide etch conditions in an inductively coupled GEC cell reactor

Marcos J. Barela; Harold M. Anderson; Gottlieb S. Oehrlein

J. Vac. Sci. Technol. A 23, 408–416 (2005) https://doi.org/10.1116/1.1874173

Abstract

View articletitled, Role of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mrow><msub><mi mathvariant="normal">C</mi><mn>2</mn></msub><msub><mi mathvariant="normal">F</mi><mn>4</mn></msub></mrow></mrow></math>⁠, <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mrow><msub><mrow><mi mathvariant="normal">CF</mi></mrow><mn>2</mn></msub></mrow></mrow></math>⁠, and ions in <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mrow><msub><mi mathvariant="normal">C</mi><mn>4</mn></msub><msub><mi mathvariant="normal">F</mi><mn>8</mn></msub><mo>∕</mo><mi mathvariant="normal">Ar</mi></mrow></mrow></math> plasma discharges under active oxide etch conditions in an inductively coupled GEC cell reactor

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Development of low temperature silicon oxide thin films by photo-CVD for surface passivation

Sumita Mukhopadhyay; Tapati Jana; Swati Ray

J. Vac. Sci. Technol. A 23, 417–422 (2005) https://doi.org/10.1116/1.1874174

Abstract

View articletitled, Development of low temperature silicon oxide thin films by photo-CVD for surface passivation

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Investigation of the nanostructure and wear properties of physical vapor deposited CrCuN nanocomposite coatings

M. A. Baker; P. J. Kench; C. Tsotsos; P. N. Gibson; A. Leyland; A. Matthews

J. Vac. Sci. Technol. A 23, 423–433 (2005) https://doi.org/10.1116/1.1875212

Abstract

View articletitled, Investigation of the nanostructure and wear properties of physical vapor deposited CrCuN nanocomposite coatings

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Wettability and thermal stability of fluorocarbon films deposited by deep reactive ion etching

Yan Xin Zhuang; Aric Menon

J. Vac. Sci. Technol. A 23, 434–439 (2005) https://doi.org/10.1116/1.1875232

Abstract

View articletitled, Wettability and thermal stability of fluorocarbon films deposited by deep reactive ion etching

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Discharge mode transitions in low-frequency inductively coupled plasmas with internal oscillating current sheets

Z. L. Tsakadze; K. Ostrikov; E. L. Tsakadze; S. Xu

J. Vac. Sci. Technol. A 23, 440–447 (2005) https://doi.org/10.1116/1.1875252

Abstract

View articletitled, Discharge mode transitions in low-frequency inductively coupled plasmas with internal oscillating current sheets

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Characterization of epitaxial germanium grown on ${({La}_{x} Y_{1 - x})}_{2} O_{3}$ ∕Si(111) using different surfactants

E. J. Preisler; S. Guha

J. Vac. Sci. Technol. A 23, 448–451 (2005) https://doi.org/10.1116/1.1875253

Abstract

View articletitled, Characterization of epitaxial germanium grown on <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mrow><mo>(</mo><msub><mi>La</mi><mi>x</mi></msub><msub><mi mathvariant="normal">Y</mi><mrow><mn>1</mn><mo>−</mo><mi>x</mi></mrow></msub><mo>)</mo></mrow><mn>2</mn></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mn>3</mn></msub></math>∕Si(111) using different surfactants

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Effect of $O_{2}$ flow ratio on the microstructure and stress of room temperature reactively sputtered ${RuO}_{x}$ thin films

Junxia Shi; Feng Huang; Mark L. Weaver; Tonya M. Klein

J. Vac. Sci. Technol. A 23, 452–459 (2005) https://doi.org/10.1116/1.1875272

Abstract

View articletitled, Effect of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi mathvariant="normal">O</mi><mn>2</mn></msub></mrow></math> flow ratio on the microstructure and stress of room temperature reactively sputtered <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi>RuO</mi><mi>x</mi></msub></mrow></math> thin films

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Using beam flux monitor as Langmuir probe for plasma-assisted molecular beam epitaxy

M. A. Wistey; S. R. Bank; H. B. Yuen; J. S. Harris, Jr.; M. M. Oye; A. L. Holmes, Jr.

J. Vac. Sci. Technol. A 23, 460–464 (2005) https://doi.org/10.1116/1.1881635

Abstract

View articletitled, Using beam flux monitor as Langmuir probe for plasma-assisted molecular beam epitaxy

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Enhancement of mechanical properties of organosilicon thin films deposited from diethylsilane

April D. Ross; Karen K. Gleason

J. Vac. Sci. Technol. A 23, 465–469 (2005) https://doi.org/10.1116/1.1881636

Abstract

View articletitled, Enhancement of mechanical properties of organosilicon thin films deposited from diethylsilane

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Adsorbate effects on pulsed electron diode anode thermal response

T. K. Statom; M. Ruebush; D. A. Shiffler; E. Schamiloglu; M. LaCour; K. Golby

J. Vac. Sci. Technol. A 23, 470–474 (2005) https://doi.org/10.1116/1.1887197

Abstract

View articletitled, Adsorbate effects on pulsed electron diode anode thermal response

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Electron impact effects on the oxidation of Si(111) at 90 K

Shin-ya Ohno; John T. Yates, Jr.

J. Vac. Sci. Technol. A 23, 475–479 (2005) https://doi.org/10.1116/1.1887198

Abstract

View articletitled, Electron impact effects on the oxidation of Si(111) at 90 K

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Effect of ion entry acceptance conditions on the performance of a quadrupole mass spectrometer operated in upper and lower stability regions

P. Turner; S. Taylor; J. R. Gibson

J. Vac. Sci. Technol. A 23, 480–487 (2005) https://doi.org/10.1116/1.1894665

Abstract

View articletitled, Effect of ion entry acceptance conditions on the performance of a quadrupole mass spectrometer operated in upper and lower stability regions

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Plasma enhanced atomic layer deposition of ${HfO}_{2}$ and ${ZrO}_{2}$ high-k thin films

Sandy X. Lao; Ryan M. Martin; Jane P. Chang

J. Vac. Sci. Technol. A 23, 488–496 (2005) https://doi.org/10.1116/1.1894666

Abstract

View articletitled, Plasma enhanced atomic layer deposition of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi>HfO</mi><mn>2</mn></msub></mrow></math> and <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi>ZrO</mi><mn>2</mn></msub></mrow></math> high-k thin films

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X-ray photoelectron spectroscopic observation on B–C–N hybrids synthesized by ion beam deposition of borazine

Md. Nizam Uddin; Iwao Shimoyama; Yuji Baba; Tetsuhiro Sekiguchi; Masamitsu Nagano

J. Vac. Sci. Technol. A 23, 497–502 (2005) https://doi.org/10.1116/1.1894667

Abstract

View articletitled, X-ray photoelectron spectroscopic observation on B–C–N hybrids synthesized by ion beam deposition of borazine

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Temperature dependence of resistivity of Si–Ta film deposited by magnetron sputtering

T. M. Berlicki; E. L. Prociów; J. Brzeziński; S. J. Osadnik

J. Vac. Sci. Technol. A 23, 503–505 (2005) https://doi.org/10.1116/1.1894685

Abstract

View articletitled, Temperature dependence of resistivity of Si–Ta film deposited by magnetron sputtering

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Anti-emission characteristics of the grid coated with hafnium film

Jun Jiang; Bingyao Jiang; Congxin Ren; Tao Feng; Xi Wang; Xianghuai Liu; Shichang Zou

J. Vac. Sci. Technol. A 23, 506–511 (2005) https://doi.org/10.1116/1.1894726

Abstract

View articletitled, Anti-emission characteristics of the grid coated with hafnium film

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Effects of substrate temperature on properties of pulsed dc reactively sputtered tantalum oxide films

Pushkar Jain; Jasbir S. Juneja; Vinay Bhagwat; Eugene J. Rymaszewski; Toh-Ming Lu; Timothy S. Cale

J. Vac. Sci. Technol. A 23, 512–519 (2005) https://doi.org/10.1116/1.1897700

Abstract

View articletitled, Effects of substrate temperature on properties of pulsed dc reactively sputtered tantalum oxide films

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Etching of oxynitride thin films using inductively coupled plasma

Byungwhan Kim; Dukwoo Lee; Nam Jung Kim; Byung Teak Lee

J. Vac. Sci. Technol. A 23, 520–524 (2005) https://doi.org/10.1116/1.1897701

Abstract

View articletitled, Etching of oxynitride thin films using inductively coupled plasma

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Surface and corrosion characteristics of carbon plasma implanted and deposited nickel-titanium alloy

R. W. Y. Poon; X. Y. Liu; C. Y. Chung; P. K. Chu; K. W. K. Yeung; W. W. Lu; K. M. C. Cheung

J. Vac. Sci. Technol. A 23, 525–530 (2005) https://doi.org/10.1116/1.1897702

Abstract

View articletitled, Surface and corrosion characteristics of carbon plasma implanted and deposited nickel-titanium alloy

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Rarefied gas flow through a long tube of variable radius

Felix Sharipov; Guilherme Bertoldo

J. Vac. Sci. Technol. A 23, 531–533 (2005) https://doi.org/10.1116/1.1897703

Abstract

View articletitled, Rarefied gas flow through a long tube of variable radius

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Low- and high-resistivity silicon substrate characterization using the Al/silicon-rich oxide/Si structure with comparison to the metal oxide semiconductor technique

A. Luna-López; M. Aceves-Mijares; O. Malik; R. Glaenzer

J. Vac. Sci. Technol. A 23, 534–538 (2005) https://doi.org/10.1116/1.1897704

Abstract

View articletitled, Low- and high-resistivity silicon substrate characterization using the Al/silicon-rich oxide/Si structure with comparison to the metal oxide semiconductor technique

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Kind of oxide-composed superhard nanomultilayer prepared by magnetron sputtering

Wei Lun; Shao Nan; Mei Fanghua; Li Geyang; Li Jianguo

J. Vac. Sci. Technol. A 23, 539–544 (2005) https://doi.org/10.1116/1.1901663

Abstract

View articletitled, Kind of oxide-composed superhard nanomultilayer prepared by magnetron sputtering

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Compositional study of silicon oxynitride thin films deposited using electron cyclotron resonance plasma-enhanced chemical vapor deposition technique

H. Baumann; R. E. Sah

J. Vac. Sci. Technol. A 23, 545–550 (2005) https://doi.org/10.1116/1.1901665

Abstract

View articletitled, Compositional study of silicon oxynitride thin films deposited using electron cyclotron resonance plasma-enhanced chemical vapor deposition technique

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Characterization of a plasma produced by pulsed arc using an electrostatic double probe

L. A. García; A. O. Pulzara; A. Devia; E. Restrepo

J. Vac. Sci. Technol. A 23, 551–553 (2005) https://doi.org/10.1116/1.1901666

Abstract

View articletitled, Characterization of a plasma produced by pulsed arc using an electrostatic double probe

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Axial-symmetric transmission gauge: Extension of its pressure measuring range and reduction of the electron stimulated desorption ion effect in ultrahigh vacuum

N. Takahashi; J. Yuyama; Y. Tuzi; H. Akimichi; I. Arakawa

J. Vac. Sci. Technol. A 23, 554–558 (2005) https://doi.org/10.1116/1.1901668

Abstract

View articletitled, Axial-symmetric transmission gauge: Extension of its pressure measuring range and reduction of the electron stimulated desorption ion effect in ultrahigh vacuum

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Thermoelectric characterization of sputter-deposited $Bi ∕ Te$ bilayer thin films

C. N. Liao; S. W. Kuo

J. Vac. Sci. Technol. A 23, 559–563 (2005) https://doi.org/10.1116/1.1901671

Abstract

View articletitled, Thermoelectric characterization of sputter-deposited <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Bi</mi><mo>∕</mo><mi mathvariant="normal">Te</mi></mrow></math> bilayer thin films

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Low temperature rf sputtering deposition of (Ba, Sr) $Ti O_{3}$ thin film with crystallization enhancement by rf power supplied to the substrate

Masaki Yoshimaru; Shinobu Takehiro; Kazuhide Abe; Hiroshi Onoda

J. Vac. Sci. Technol. A 23, 564–569 (2005) https://doi.org/10.1116/1.1901676

Abstract

View articletitled, Low temperature rf sputtering deposition of (Ba, Sr) <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Ti</mi><msub><mi mathvariant="normal">O</mi><mn>3</mn></msub></mrow></math> thin film with crystallization enhancement by rf power supplied to the substrate

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Method and setup for photodesorption measurements for a nonevaporable-getter-coated vacuum chamber

Oleg B. Malyshev; Vadim V. Anashin; Rodion V. Dostovalov; Nikita V. Fedorov; Alexander A. Krasnov; Ian R. Collins; Vladimir L. Ruzinov

J. Vac. Sci. Technol. A 23, 570–576 (2005) https://doi.org/10.1116/1.1897705

Abstract

View articletitled, Method and setup for photodesorption measurements for a nonevaporable-getter-coated vacuum chamber

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SHOP NOTES

Summary: Update to ASTM guide E 1523 to charge control and charge referencing techniques in x-ray photoelectron spectroscopy

D. R. Baer

J. Vac. Sci. Technol. A 23, 577–578 (2005) https://doi.org/10.1116/1.1901672

Abstract

View articletitled, Summary: Update to ASTM guide E 1523 to charge control and charge referencing techniques in x-ray photoelectron spectroscopy

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LETTERS

Batch process for atomic layer deposition of hafnium silicate thin films on 300-mm-diameter silicon substrates

Yoshi Okuyama; Carl Barelli; Christopher Tousseau; Seung Park; Yoshihide Senzaki

J. Vac. Sci. Technol. A 23, L1–L3 (2005) https://doi.org/10.1116/1.1887231

Abstract

View articletitled, Batch process for atomic layer deposition of hafnium silicate thin films on 300-mm-diameter silicon substrates

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