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Issues
July 2004
ISSN 0734-2101
EISSN 1520-8559
In this Issue
REGULAR ARTICLES
Deposition of preferred-orientation ZnO films on the ceramic substrates and its application for surface acoustic wave filters
J. Vac. Sci. Technol. A 22, 1087–1092 (2004)
https://doi.org/10.1116/1.1738653
Reactive etching of platinum-manganese using a pulse-time-modulated chlorine plasma and a plasma post-etch corrosion treatment
J. Vac. Sci. Technol. A 22, 1093–1100 (2004)
https://doi.org/10.1116/1.1738656
Interfacial reaction effect on the ohmic properties of a Pt/Pd/Au contact on p-type GaN
J. Vac. Sci. Technol. A 22, 1101–1104 (2004)
https://doi.org/10.1116/1.1738657
Growth of diamond film on single crystal lithium niobate for surface acoustic wave devices
J. Vac. Sci. Technol. A 22, 1105–1109 (2004)
https://doi.org/10.1116/1.1740770
Study of the optical properties of thin films by effective medium theories
J. Vac. Sci. Technol. A 22, 1115–1119 (2004)
https://doi.org/10.1116/1.1752898
Pretreatment technique for surface improvement of Ru films in Ru-metalorganic chemical vapor deposition
J. Vac. Sci. Technol. A 22, 1120–1123 (2004)
https://doi.org/10.1116/1.1756876
Plasma-assisted growth of bilayer silicon-containing coatings for hardness and corrosion resistance
J. Vac. Sci. Technol. A 22, 1124–1128 (2004)
https://doi.org/10.1116/1.1756877
Interfacial analysis using time-of-flight medium energy backscattering
J. Vac. Sci. Technol. A 22, 1129–1133 (2004)
https://doi.org/10.1116/1.1738652
Thickness uniformity of large-area double-sided thin films simultaneously deposited with biaxial substrate rotation
J. Vac. Sci. Technol. A 22, 1134–1138 (2004)
https://doi.org/10.1116/1.1738655
Effect of low substrate deposition temperature on the optical and electrical properties of doped ZnO films fabricated by ion beam sputter deposition
J. Vac. Sci. Technol. A 22, 1139–1145 (2004)
https://doi.org/10.1116/1.1738654
Properties of high- purity silicon nitride stacks
J. Vac. Sci. Technol. A 22, 1146–1151 (2004)
https://doi.org/10.1116/1.1759355
Spectroscopic-ellipsometry characterization of the interface layer of multilayer thin films
J. Vac. Sci. Technol. A 22, 1152–1157 (2004)
https://doi.org/10.1116/1.1761160
Etching yield of irradiated by ion with energies from 250 to 2000 eV
Kazuhiro Karahashi; Ken-ichi Yanai; Kenji Ishikawa; Hideo Tsuboi; Kazuaki Kurihara; Moritaka Nakamura
J. Vac. Sci. Technol. A 22, 1166–1168 (2004)
https://doi.org/10.1116/1.1761119
Theoretical study on deposition temperature during arc ion plating
J. Vac. Sci. Technol. A 22, 1169–1174 (2004)
https://doi.org/10.1116/1.1761083
Atomic layer deposition of hafnium oxide and hafnium silicate thin films using liquid precursors and ozone
J. Vac. Sci. Technol. A 22, 1175–1181 (2004)
https://doi.org/10.1116/1.1761186
Characteristics of rapid-thermal-annealed cathode film for an all-solid-state thin film microbattery
J. Vac. Sci. Technol. A 22, 1182–1187 (2004)
https://doi.org/10.1116/1.1763906
Epitaxial Si/Si(001) thin films obtained by solid phase crystallization
J. Vac. Sci. Technol. A 22, 1188–1190 (2004)
https://doi.org/10.1116/1.1763909
Electrical characterization of doped diamond irradiated with low thermal neutron fluence
J. Vac. Sci. Technol. A 22, 1191–1194 (2004)
https://doi.org/10.1116/1.1763910
Internal structure of TiAlN/VN coating deposited on sharp edges by ion-assisted physical vapor deposition
J. Vac. Sci. Technol. A 22, 1195–1199 (2004)
https://doi.org/10.1116/1.1763911
Microstructure of plasma-deposited optical films
Stéphane Larouche; Hieronim Szymanowski; Jolanta E. Klemberg-Sapieha; Ludvik Martinu; Subhash C. Gujrathi
J. Vac. Sci. Technol. A 22, 1200–1207 (2004)
https://doi.org/10.1116/1.1763912
Microstructure and mechanical properties of Ir–Ta coatings on nickel-base single-crystal superalloy TMS-75
J. Vac. Sci. Technol. A 22, 1208–1217 (2004)
https://doi.org/10.1116/1.1763913
Experiments and theoretical explanation of droplet elimination phenomenon in pulsed-bias arc deposition
J. Vac. Sci. Technol. A 22, 1218–1222 (2004)
https://doi.org/10.1116/1.1761071
Incorporation of fluorine in hydrogenated silicon carbide films deposited by pulsed glow discharge
J. Vac. Sci. Technol. A 22, 1223–1228 (2004)
https://doi.org/10.1116/1.1764820
Stoichiometry dependence of hardness, elastic properties, and oxidation resistance in nanocomposites deposited by a hybrid process
J. Vac. Sci. Technol. A 22, 1229–1234 (2004)
https://doi.org/10.1116/1.1763907
Effects of oxygen contents on the electrical and optical properties of indium molybdenum oxide films fabricated by high density plasma evaporation
J. Vac. Sci. Technol. A 22, 1235–1241 (2004)
https://doi.org/10.1116/1.1763908
Integrated feature scale modeling of plasma processing of porous and solid I. Fluorocarbon etching
J. Vac. Sci. Technol. A 22, 1242–1259 (2004)
https://doi.org/10.1116/1.1764821
Integrated feature scale modeling of plasma processing of porous and solid II. Residual fluorocarbon polymer stripping and barrier layer deposition
J. Vac. Sci. Technol. A 22, 1260–1274 (2004)
https://doi.org/10.1116/1.1764822
Room temperature synthesis of porous thin films by plasma enhanced chemical vapor deposition
J. Vac. Sci. Technol. A 22, 1275–1284 (2004)
https://doi.org/10.1116/1.1761072
Atomic layer deposition of hafnium silicate films using hafnium tetrachloride and tetra-n-butyl orthosilicate
J. Vac. Sci. Technol. A 22, 1285–1289 (2004)
https://doi.org/10.1116/1.1764819
BRIEF REPORTS AND COMMENTS
Growth condition dependence of structure and surface morphology of GaN films on (111)GaAs substrates prepared by reactive sputtering
J. Vac. Sci. Technol. A 22, 1290–1292 (2004)
https://doi.org/10.1116/1.1765133
Papers from the 50th International Symposium of AVS
Applied Surface Science
Improved adhesion of amorphous carbon thin films on glass by plasma treatment
J. Vac. Sci. Technol. A 22, 1297–1300 (2004)
https://doi.org/10.1116/1.1735867
Spectroscopic characterization of high k dielectrics: Applications to interface electronic structure and stability against chemical phase separation
J. Vac. Sci. Technol. A 22, 1301–1308 (2004)
https://doi.org/10.1116/1.1755714
Wettability control of a polymer surface through 126 nm vacuum ultraviolet light irradiation
J. Vac. Sci. Technol. A 22, 1309–1314 (2004)
https://doi.org/10.1116/1.1701867
Effect of thickness on ferroelectric properties of thin films on substrates
J. Vac. Sci. Technol. A 22, 1315–1318 (2004)
https://doi.org/10.1116/1.1759350
Optical, structural, and electrical characteristics of high dielectric constant zirconium oxide thin films deposited by spray pyrolysis
J. Vac. Sci. Technol. A 22, 1319–1325 (2004)
https://doi.org/10.1116/1.1701866
Surface analysis of oxygen free electrolytic-copper X-band accelerating structures and possible correlation to radio frequency breakdown events
J. Vac. Sci. Technol. A 22, 1326–1330 (2004)
https://doi.org/10.1116/1.1701865
Valence band x-ray photoelectron spectroscopic studies of phosphorus oxides and phosphates
J. Vac. Sci. Technol. A 22, 1331–1336 (2004)
https://doi.org/10.1116/1.1763904
High-k Gate Dielectrics and Devices Topical Conference
Observation of bulk defects by spectroscopic ellipsometry
J. Vac. Sci. Technol. A 22, 1337–1341 (2004)
https://doi.org/10.1116/1.1705593
Characteristics of high-k gate dielectric formed by the oxidation of sputtered Hf/Zr/Hf thin films on the Si substrate
J. Vac. Sci. Technol. A 22, 1342–1346 (2004)
https://doi.org/10.1116/1.1760751
Effects of annealing temperature on the characteristics of high-k gate oxides
J. Vac. Sci. Technol. A 22, 1347–1350 (2004)
https://doi.org/10.1116/1.1743119
Electronic Materials and Devices
Cubic inclusions in 4H-SiC studied with ballistic electron-emission microscopy
J. Vac. Sci. Technol. A 22, 1351–1355 (2004)
https://doi.org/10.1116/1.1705644
Displacive phase transition in thin films grown on Si(001)
F. S. Aguirre-Tostado; A. Herrera-Gómez; J. C. Woicik; R. Droopad; Z. Yu; D. G. Schlom; J. Karapetrova; P. Zschack; P. Pianetta
J. Vac. Sci. Technol. A 22, 1356–1360 (2004)
https://doi.org/10.1116/1.1765657
Self-aligned silicides for Ohmic contacts in complementary metal–oxide–semiconductor technology: and NiSi
J. Vac. Sci. Technol. A 22, 1361–1370 (2004)
https://doi.org/10.1116/1.1688364
Magnetic Interfaces and Nanostructures
Magnetization dynamics and magnetotransport in epitaxial nanostructures
J. Vac. Sci. Technol. A 22, 1371–1374 (2004)
https://doi.org/10.1116/1.1692250
Arrays of magnetoresistive sensors for nondestructive testing
J. Vac. Sci. Technol. A 22, 1375–1378 (2004)
https://doi.org/10.1116/1.1743087
Texture orientation of glancing angle deposited copper nanowire arrays
J. Vac. Sci. Technol. A 22, 1379–1382 (2004)
https://doi.org/10.1116/1.1690254
Microelectromechanical Systems (MEMS)
Fabrication and characterization of a capacitive micromachined shunt switch
J. Vac. Sci. Technol. A 22, 1383–1387 (2004)
https://doi.org/10.1116/1.1690255
Investigation of nanotribological and nanomechanical properties of the digital micromirror device by atomic force microscopy
J. Vac. Sci. Technol. A 22, 1388–1396 (2004)
https://doi.org/10.1116/1.1743050
Nanoscale fatigue and fracture toughness measurements of multilayered thin film structures for digital micromirror devices
J. Vac. Sci. Technol. A 22, 1397–1405 (2004)
https://doi.org/10.1116/1.1738659
Manufacturing Science and Technology
Hydrogen pressure dependence of trench corner rounding during hydrogen annealing
J. Vac. Sci. Technol. A 22, 1406–1409 (2004)
https://doi.org/10.1116/1.1760752
Development of a continuous generation/supply system of highly concentrated ozone gas for low-temperature oxidation process
Shingo Ichimura; Hidehiko Nonaka; Yoshiki Morikawa; Tsuyoshi Noyori; Tetsuya Nishiguchi; Mitsuru Kekura
J. Vac. Sci. Technol. A 22, 1410–1414 (2004)
https://doi.org/10.1116/1.1705592
Power supply with arc handling for high peak power magnetron sputtering
J. Vac. Sci. Technol. A 22, 1415–1419 (2004)
https://doi.org/10.1116/1.1688365
Measurement of energy flux at the substrate in a magnetron sputter system using an integrated sensor
J. Vac. Sci. Technol. A 22, 1420–1424 (2004)
https://doi.org/10.1116/1.1705640
Nanometer Structures
Exploration of the chemical bonding forms of alkoxy-type organic monolayers directly attached to silicon
J. Vac. Sci. Technol. A 22, 1425–1427 (2004)
https://doi.org/10.1116/1.1759353
Photochemical reaction of organosilane self-assembled monolayer as studied by scanning probe microscopy
J. Vac. Sci. Technol. A 22, 1428–1432 (2004)
https://doi.org/10.1116/1.1764818
Self-organizing processes in connection with metastable nanocluster states
J. Vac. Sci. Technol. A 22, 1433–1438 (2004)
https://doi.org/10.1116/1.1690259
Simultaneous dynamic stiffness and extension profiles of single titin molecules: Nanomechanical evidence for unfolding intermediates
J. Vac. Sci. Technol. A 22, 1439–1443 (2004)
https://doi.org/10.1116/1.1692417
Microelectromechanical system device for calibration of atomic force microscope cantilever spring constants between 0.01 and 4 N/m
J. Vac. Sci. Technol. A 22, 1444–1449 (2004)
https://doi.org/10.1116/1.1763898
Nanotubes
Adsorption of oxidizing gases on multiwalled carbon nanotubes
J. Vac. Sci. Technol. A 22, 1450–1454 (2004)
https://doi.org/10.1116/1.1705588
Growth behavior and interfacial reaction between carbon nanotubes and Si substrate
J. Vac. Sci. Technol. A 22, 1461–1465 (2004)
https://doi.org/10.1116/1.1735908
Ozone adsorption on carbon nanotubes: Ab initio calculations and experiments
S. Picozzi; S. Santucci; L. Lozzi; C. Cantalini; C. Baratto; G. Sberveglieri; I. Armentano; J. M. Kenny; L. Valentini; B. Delley
J. Vac. Sci. Technol. A 22, 1466–1470 (2004)
https://doi.org/10.1116/1.1705587
Iron-carbide cluster thermal dynamics for catalyzed carbon nanotube growth
J. Vac. Sci. Technol. A 22, 1471–1476 (2004)
https://doi.org/10.1116/1.1752895
Contacts to Organic Materials Topical Conference
Interaction between metals and organic semiconductors studied by Raman spectroscopy
J. Vac. Sci. Technol. A 22, 1482–1487 (2004)
https://doi.org/10.1116/1.1752897
Contact potential difference measurements of doped organic molecular thin films
J. Vac. Sci. Technol. A 22, 1488–1492 (2004)
https://doi.org/10.1116/1.1688363
Plasma Science and Technology
Use of reactive gases with broad-beam radio frequency ion sources for industrial applications
J. Vac. Sci. Technol. A 22, 1493–1499 (2004)
https://doi.org/10.1116/1.1692396
Direct trim etching process of gate stacks using 193 nm ArF patterns
J. Vac. Sci. Technol. A 22, 1500–1505 (2004)
https://doi.org/10.1116/1.1690258
50 nm gate electrode patterning using a neutral-beam etching system
Shuichi Noda; Hirotomo Nishimori; Tohru Ida; Tsunetoshi Arikado; Katsunori Ichiki; Takuya Ozaki; Seiji Samukawa
J. Vac. Sci. Technol. A 22, 1506–1512 (2004)
https://doi.org/10.1116/1.1723338
Mechanisms of silicon nitride etching by electron cyclotron resonance plasmas using - and -based gas mixtures
J. Vac. Sci. Technol. A 22, 1513–1518 (2004)
https://doi.org/10.1116/1.1701858
Etching properties of lead–zirconate–titanate thin films in and gas chemistries
J. Vac. Sci. Technol. A 22, 1519–1523 (2004)
https://doi.org/10.1116/1.1764816
Modeling of the target surface modification by reactive ion implantation during magnetron sputtering
J. Vac. Sci. Technol. A 22, 1524–1529 (2004)
https://doi.org/10.1116/1.1705641
Plasma Science and Technology I
Effect of plasma flux composition on the nitriding rate of stainless steel
J. Vac. Sci. Technol. A 22, 1530–1535 (2004)
https://doi.org/10.1116/1.1752894
Correlation between volume fraction of clusters incorporated into a-Si:H films and hydrogen content associated with bonds in the films
J. Vac. Sci. Technol. A 22, 1536–1539 (2004)
https://doi.org/10.1116/1.1763905
Metallic tin reactive sputtering in a mixture Comparison between an amplified and a classical magnetron discharge
J. Vac. Sci. Technol. A 22, 1540–1545 (2004)
https://doi.org/10.1116/1.1759349
Selective plasma-induced deposition of fluorocarbon films on metal surfaces for actuation in microfluidics
J. Vac. Sci. Technol. A 22, 1546–1551 (2004)
https://doi.org/10.1116/1.1764815
Plasma Science and Technology II
Investigation of etching properties of HfO based high-K dielectrics using inductively coupled plasma
J. Vac. Sci. Technol. A 22, 1552–1558 (2004)
https://doi.org/10.1116/1.1705590
Selective etching process of and for self-aligned ferroelectric gate structure
J. Vac. Sci. Technol. A 22, 1559–1563 (2004)
https://doi.org/10.1116/1.1701859
QSA-10 Topical Conference
Intercomparison of silicon dioxide thickness measurements made by multiple techniques: The route to accuracy
J. Vac. Sci. Technol. A 22, 1564–1571 (2004)
https://doi.org/10.1116/1.1705594
Thickness and composition of ultrathin layers on Si
J. Vac. Sci. Technol. A 22, 1572–1578 (2004)
https://doi.org/10.1116/1.1701864
Multivariate statistical analysis for x-ray photoelectron spectroscopy spectral imaging: Effect of image acquisition time
J. Vac. Sci. Technol. A 22, 1579–1586 (2004)
https://doi.org/10.1116/1.1765134
Semiconductors
Effect of substrate temperature on crystal orientation and residual stress in radio frequency sputtered gallium–nitride films
J. Vac. Sci. Technol. A 22, 1587–1590 (2004)
https://doi.org/10.1116/1.1759348
Textured growth of cubic gallium nitride thin films on Si (100) substrates by sputter deposition
J. Vac. Sci. Technol. A 22, 1591–1595 (2004)
https://doi.org/10.1116/1.1705643
Real time optical characterization of gas flow dynamics in high-pressure chemical vapor deposition
J. Vac. Sci. Technol. A 22, 1596–1599 (2004)
https://doi.org/10.1116/1.1705589
Morphological evolution of III–V semiconductors and during low energy electron enhanced dry etching
J. Vac. Sci. Technol. A 22, 1600–1605 (2004)
https://doi.org/10.1116/1.1752896
Electronic and optical properties of GaAsN/GaAs quantum wells: A tight-binding study
J. Vac. Sci. Technol. A 22, 1606–1609 (2004)
https://doi.org/10.1116/1.1764814
Advanced Surface Engineering
Functional profile coatings and film stress
J. Vac. Sci. Technol. A 22, 1610–1614 (2004)
https://doi.org/10.1116/1.1701863
Surface Science
Photoinduced decomposition of alkyl monolayers using 172 nm vacuum ultraviolet light
Naoto Shirahata; Kotaro Oda; Shuuichi Asakura; Akio Fuwa; Yoshiyuki Yokogawa; Tetsuya Kameyama; Atsushi Hozumi
J. Vac. Sci. Technol. A 22, 1615–1619 (2004)
https://doi.org/10.1116/1.1692318
Reaction intermediates in high temperature catalytic water formation studied with cavity ringdown spectroscopy
J. Vac. Sci. Technol. A 22, 1620–1624 (2004)
https://doi.org/10.1116/1.1756881
Photoemission study of the translational energy induced oxidation processes on Cu(111)
Kousuke Moritani; Michio Okada; Seiichi Sato; Seishiro Goto; Toshio Kasai; Akitaka Yoshigoe; Yuden Teraoka
J. Vac. Sci. Technol. A 22, 1625–1630 (2004)
https://doi.org/10.1116/1.1743254
Organic molecules on zirconium surfaces
J. Vac. Sci. Technol. A 22, 1631–1635 (2004)
https://doi.org/10.1116/1.1723308
Preparation and characterization of magnetron sputtered, ultra-thin films on MgO
J. Vac. Sci. Technol. A 22, 1636–1639 (2004)
https://doi.org/10.1116/1.1752892
Fourier transform infrared study of methanol, water, and acetic acid on MgO(100)
J. Vac. Sci. Technol. A 22, 1640–1646 (2004)
https://doi.org/10.1116/1.1701862
Surface Science I
Ethanol reactions over catalysts. Total decomposition and formation
J. Vac. Sci. Technol. A 22, 1652–1658 (2004)
https://doi.org/10.1116/1.1705591
Coupling reactions of trifluoroethyl iodide on GaAs(100)
J. Vac. Sci. Technol. A 22, 1659–1666 (2004)
https://doi.org/10.1116/1.1735887
Scanning tunneling microscopy studies of oxide growth and etching on Si(5 5 12)
J. Vac. Sci. Technol. A 22, 1667–1670 (2004)
https://doi.org/10.1116/1.1760750
Surface Science II
Buckling of Si and surfaces
J. Vac. Sci. Technol. A 22, 1671–1674 (2004)
https://doi.org/10.1116/1.1705647
Studies of the electronic structure at the interface
J. Vac. Sci. Technol. A 22, 1675–1681 (2004)
https://doi.org/10.1116/1.1763900
Surface phase transitions and related surface defect structures upon reduction of epitaxial thin films: A scanning tunneling microscopy study
J. Vac. Sci. Technol. A 22, 1682–1689 (2004)
https://doi.org/10.1116/1.1756880
Surface Science III
Surface composition and structure of and the effect of impurity segregation
J. Vac. Sci. Technol. A 22, 1690–1696 (2004)
https://doi.org/10.1116/1.1763899
Thin Films
Reactive-environment, hollow cathode sputtering: Basic characteristics and application to doped ZnO, and
J. Vac. Sci. Technol. A 22, 1697–1704 (2004)
https://doi.org/10.1116/1.1723289
Transparent conducting amorphous Zn–Sn–O films deposited by simultaneous dc sputtering
Toshihiro Moriga; Yukako Hayashi; Kumiko Kondo; Yusuke Nishimura; Kei-ichiro Murai; Ichiro Nakabayashi; Hidenori Fukumoto; Kikuo Tominaga
J. Vac. Sci. Technol. A 22, 1705–1710 (2004)
https://doi.org/10.1116/1.1765658
Highly transparent and conductive ZnO:Al thin films prepared by vacuum arc plasma evaporation
J. Vac. Sci. Technol. A 22, 1711–1715 (2004)
https://doi.org/10.1116/1.1759351
Ultrahigh barrier coating deposition on polycarbonate substrates
Marc Schaepkens; Tae Won Kim; Ahmet Gün Erlat; Min Yan; Kevin W. Flanagan; Christian M. Heller; Paul A. McConnelee
J. Vac. Sci. Technol. A 22, 1716–1722 (2004)
https://doi.org/10.1116/1.1705646
Stretchable wavy metal interconnects
J. Vac. Sci. Technol. A 22, 1723–1725 (2004)
https://doi.org/10.1116/1.1756879
Properties of indium zinc oxide thin films on heat withstanding plastic substrate
J. Vac. Sci. Technol. A 22, 1726–1729 (2004)
https://doi.org/10.1116/1.1692270
Anneal behavior of reactively sputtered HfN films
J. Vac. Sci. Technol. A 22, 1730–1733 (2004)
https://doi.org/10.1116/1.1705642
Spatially regulated growth of metal oxide thin film onto alkyl monolayer template from aqueous solution containing metal fluoride
J. Vac. Sci. Technol. A 22, 1734–1738 (2004)
https://doi.org/10.1116/1.1692231
Characteristics of structures using as buffer layers for ferroelectric-gate field-effect transistors
J. Vac. Sci. Technol. A 22, 1739–1742 (2004)
https://doi.org/10.1116/1.1759352
Ferroelectric properties of lanthanide-doped thin films prepared by using a sol-gel method
J. Vac. Sci. Technol. A 22, 1743–1745 (2004)
https://doi.org/10.1116/1.1752893
Luminescence behavior of Li-doped thin film phosphors grown by pulsed laser ablation
J. Vac. Sci. Technol. A 22, 1746–1750 (2004)
https://doi.org/10.1116/1.1764813
Luminescent characteristics of Se-doped thin film phosphors grown by pulsed laser ablation
J. Vac. Sci. Technol. A 22, 1751–1756 (2004)
https://doi.org/10.1116/1.1763902
Low resistivity polycrystalline ZnO:Al thin films prepared by pulsed laser deposition
J. Vac. Sci. Technol. A 22, 1757–1762 (2004)
https://doi.org/10.1116/1.1763903
Analysis and modeling of low pressure chemical vapor deposition of phosphorus-doped polysilicon in commercial scale reactor
J. Vac. Sci. Technol. A 22, 1763–1766 (2004)
https://doi.org/10.1116/1.1764812
Study of rough growth fronts of evaporated polycrystalline gold films
J. Vac. Sci. Technol. A 22, 1767–1772 (2004)
https://doi.org/10.1116/1.1692341
Anisotropic growth of chromium films during sputter deposition on substrates in planetary motion
J. Vac. Sci. Technol. A 22, 1773–1777 (2004)
https://doi.org/10.1116/1.1766035
Physical self-assembly and the nucleation of three-dimensional nanostructures by oblique angle deposition
J. Vac. Sci. Technol. A 22, 1778–1784 (2004)
https://doi.org/10.1116/1.1743178
X-ray elastic constants of chromium nitride films deposited by arc-ion plating
J. Vac. Sci. Technol. A 22, 1785–1787 (2004)
https://doi.org/10.1116/1.1705648
Thin Films I
Thin Films II
Electron cyclotron resonance plasma sputtering growth of textured films of c-axis-oriented on Si(100) and Si(111) surfaces
J. Vac. Sci. Technol. A 22, 1793–1798 (2004)
https://doi.org/10.1116/1.1764817
Vacuum Technology
Analysis of closed loop control and sensor for a reactive sputtering drum coater
J. Vac. Sci. Technol. A 22, 1804–1809 (2004)
https://doi.org/10.1116/1.1738661
Theoretical and experimental evaluation of the windowless interface for the TRASCO-ADS project
P. Michelato; E. Bari; L. Monaco; D. Sertore; A. Bonucci; R. Giannantonio; M. Urbano; L. Viale; P. Turroni; L. Cinotti
J. Vac. Sci. Technol. A 22, 1810–1815 (2004)
https://doi.org/10.1116/1.1701861
Calibration apparatus for precise barometers and vacuum gauges
J. Vac. Sci. Technol. A 22, 1816–1819 (2004)
https://doi.org/10.1116/1.1735935
Pumping characteristics of metal films in a vacuum glass vessel: Experimental and theoretical issues
Antonio Bonucci; Roberto Giannantonio; Corrado Carretti; Giorgo Longoni; Anna Lisa Caterino; Marco Urbano
J. Vac. Sci. Technol. A 22, 1820–1827 (2004)
https://doi.org/10.1116/1.1743218
Multidimensional flow modeling of the compression test of a Gaede pump stage in the viscous regime
J. Vac. Sci. Technol. A 22, 1828–1835 (2004)
https://doi.org/10.1116/1.1705639
Applied Surface Science/Biomaterials Characterization
Spatially defined immobilization of biomolecules on microstructured polymer substrate
J. Vac. Sci. Technol. A 22, 1836–1841 (2004)
https://doi.org/10.1116/1.1738662
Electrochemistry and Fluid Solid Interfaces/Water at Interfaces
Photoexcited electrodeposition of Cu structures on
J. Vac. Sci. Technol. A 22, 1842–1846 (2004)
https://doi.org/10.1116/1.1690257
Electronic Materials and Devices/Poster Session
Sub-100 nm radius of curvature wide-band gap III-nitride vacuum microelectronic field emitter structures created by inductively coupled plasma etching
J. Vac. Sci. Technol. A 22, 1847–1851 (2004)
https://doi.org/10.1116/1.1690256
Electroless copper deposition as a seed layer on TiSiN barrier
J. Vac. Sci. Technol. A 22, 1852–1856 (2004)
https://doi.org/10.1116/1.1738658
Deposition and field-emission characterization of electrically conductive nitrogen-doped diamond-like amorphous carbon films
J. Vac. Sci. Technol. A 22, 1857–1861 (2004)
https://doi.org/10.1116/1.1756878
Magnetic Interfaces and Nanostructures/Semiconductor Spin Injection
Efficient electrical spin injection in GaAs: A comparison between and Schottky injectors
J. Vac. Sci. Technol. A 22, 1862–1867 (2004)
https://doi.org/10.1116/1.1692202
Magnetic Interfaces and Nanostructures/Magnetic Thin Films
Correlated structural and magnetization reversal studies on epitaxial Ni films grown with molecular beam epitaxy and with sputtering
Zhengdong Zhang; R. A. Lukaszew; C. Cionca; X. Pan; R. Clarke; M. Yeadon; A. Zambano; D. Walko; E. Dufresne; Suzanne te Velthius
J. Vac. Sci. Technol. A 22, 1868–1872 (2004)
https://doi.org/10.1116/1.1692292
Processing at the Nanoscale/Nanoscale Patterning and Lithography
Local oxidation of metal and metal nitride films
J. Vac. Sci. Technol. A 22, 1879–1884 (2004)
https://doi.org/10.1116/1.1723269
Organic Films and Devices/Molecular and Organic Films
Large magnetic field effects in organic light emitting diodes based on tris(8-hydroxyquinoline aluminum) -Di(naphthalen-1-yl)- (NPB) bilayers
J. Vac. Sci. Technol. A 22, 1885–1891 (2004)
https://doi.org/10.1116/1.1759347
Polymeric aperture masks for high performance organic integrated circuits
J. Vac. Sci. Technol. A 22, 1892–1895 (2004)
https://doi.org/10.1116/1.1766304
Plasma Science and Technology/MEMS Etching
Plasma Science and Technology/Poster Session
Anisotropic deposition of Cu in trenches by H-assisted plasma chemical vapor deposition
J. Vac. Sci. Technol. A 22, 1903–1907 (2004)
https://doi.org/10.1116/1.1738663
Semiconductors/Poster Session
Effect of Mn composition on characterization of epilayers
J. Vac. Sci. Technol. A 22, 1908–1911 (2004)
https://doi.org/10.1116/1.1705645
Semiconductors/Low Dimensional Structures
Self-organized template formation for quantum dot ordering
J. Vac. Sci. Technol. A 22, 1912–1916 (2004)
https://doi.org/10.1116/1.1759346
Surface Science/Self-Assembled Monolayers
Self-assembled organic thin films on electroplated copper for prevention of corrosion
J. Vac. Sci. Technol. A 22, 1917–1925 (2004)
https://doi.org/10.1116/1.1763901
Surface passivation approaches for silicon, germanium, and III–V semiconductors
Roel J. Theeuwes, Wilhelmus M. M. Kessels, et al.
Low-temperature etching of silicon oxide and silicon nitride with hydrogen fluoride
Thorsten Lill, Mingmei Wang, et al.
Atomic layer deposition of nanofilms on porous polymer substrates: Strategies for success
Brian C. Welch, Jeanne Casetta, et al.