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REGULAR ARTICLES

Thermal stability and hydrogen atom induced etching of nanometer-thick a-Si:H films grown by ion-beam deposition on Si(100) surfaces

J. Biener; C. Lutterloh; M. Wicklein; A. Dinger; J. Küppers

J. Vac. Sci. Technol. A 21, 831–837 (2003) https://doi.org/10.1116/1.1575213

Abstract

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Photoluminescence of Mg-doped GaN grown by metalorganic chemical vapor deposition

B. Z. Qu; Q. S. Zhu; X. H. Sun; S. K. Wan; Z. G. Wang; H. Nagai; Y. Kawaguchi; K. Hiramatsu; N. Sawaki

J. Vac. Sci. Technol. A 21, 838–841 (2003) https://doi.org/10.1116/1.1575214

Abstract

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Energetic deposition of niobium thin film by ecr-plasma

G. Wu; H. L. Phillips; R. M. Sundelin

J. Vac. Sci. Technol. A 21, 842–845 (2003) https://doi.org/10.1116/1.1575227

Abstract

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Effect of sputtering pressure on residual stress in Ni films using energy-dispersive x-ray diffraction

J. A. Alfonso; E. D. Greaves; B. Lavelle; L. Sajo-Bohus

J. Vac. Sci. Technol. A 21, 846–850 (2003) https://doi.org/10.1116/1.1575229

Abstract

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Structural and mechanical properties of diamond-like carbon films deposited by direct current magnetron sputtering

E. Broitman; N. Hellgren; Zs. Czigány; R. D. Twesten; J. Luning; I. Petrov; L. Hultman; B. C. Holloway

J. Vac. Sci. Technol. A 21, 851–859 (2003) https://doi.org/10.1116/1.1575231

Abstract

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X-ray photoemission spectra and x-ray excited Auger spectrum investigation of the electronic structure of ${Pd}_{3} ({PS}_{4})_{2}$

V. Grasso; L. Silipigni

J. Vac. Sci. Technol. A 21, 860–865 (2003) https://doi.org/10.1116/1.1575212

Abstract

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Laser desorption time-of-flight mass spectrometry of fluorocarbon films synthesized by $C_{4} F_{8} / H_{2}$ plasmas

K. Shibagaki; T. Maeda; N. Takada; K. Sasaki; K. Kadota

J. Vac. Sci. Technol. A 21, 866–873 (2003) https://doi.org/10.1116/1.1577135

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Pulsed laser ultrahigh vacuum deposited silicon in the presence of excess cesium and oxygen studied with x-ray photoelectron spectroscopy and atomic force microscopy

Cheow-Keong Choo; Katsumi Tanaka; Hiroaki Suzuki; Nobuyuki Saotome; Kouji Ichida

J. Vac. Sci. Technol. A 21, 874–880 (2003) https://doi.org/10.1116/1.1577137

Abstract

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Edison’s vacuum technology patents

Robert K. Waits

J. Vac. Sci. Technol. A 21, 881–891 (2003) https://doi.org/10.1116/1.1575230

Abstract

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Low temperature pulsed etching of large glass substrates

L. Dubost; A. Belinger; J. Perrin; R. W. Boswell

J. Vac. Sci. Technol. A 21, 892–894 (2003) https://doi.org/10.1116/1.1575211

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Effects of Si addition on the microstructural evolution and hardness of Ti–Al–Si–N films prepared by the hybrid system of arc ion plating and sputtering techniques

In-Wook Park; Sung Ryong Choi; Mi-Hye Lee; Kwang Ho Kim

J. Vac. Sci. Technol. A 21, 895–899 (2003) https://doi.org/10.1116/1.1576765

Abstract

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Plasma-enhanced chemical vapor deposition of ${SiO}_{2}$ from a $Si ({CH}_{3})_{3} Cl$ precursor and mixtures ${Ar/O}_{2}$ as plasma gas

A. Barranco; J. Cotrino; F. Yubero; T. Girardeau; S. Camelio; C. Clerc; A. R. Gonzalez-Elipe

J. Vac. Sci. Technol. A 21, 900–905 (2003) https://doi.org/10.1116/1.1577134

Abstract

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Microstructural and optical properties of aluminum oxide thin films prepared by off-plane filtered cathodic vacuum arc system

Z. W. Zhao; B. K. Tay; S. P. Lau; C. Y. Xiao

J. Vac. Sci. Technol. A 21, 906–910 (2003) https://doi.org/10.1116/1.1577132

Abstract

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Feature profile evolution in high-density plasma etching of silicon with ${Cl}_{2}$

Weidong Jin; Herbert H. Sawin

J. Vac. Sci. Technol. A 21, 911–921 (2003) https://doi.org/10.1116/1.1579015

Abstract

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Determination of ${Ti}^{+}$ -flux and ${Ar}^{+}$ -flux of ionized physical vapor deposition of titanium from multiscale model calibration with test structures

W. Jacobs; A. Kersch; A. Ruf; N. Urbansky

J. Vac. Sci. Technol. A 21, 922–936 (2003) https://doi.org/10.1116/1.1578652

Abstract

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Comparison of the stability of hot and cold cathode ionization gauges

Detian Li; Karl Jousten

J. Vac. Sci. Technol. A 21, 937–946 (2003) https://doi.org/10.1116/1.1578654

Abstract

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Mechanism of hardening in Cr–Al–N–O thin films prepared by pulsed laser deposition

M. Hirai; T. Suzuki; H. Suematsu; W. Jiang; K. Yatsui

J. Vac. Sci. Technol. A 21, 947–954 (2003) https://doi.org/10.1116/1.1578656

Abstract

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Etching silicon by ${SF}_{6}$ in a continuous and pulsed power helicon reactor

A. Herrick; A. J. Perry; R. W. Boswell

J. Vac. Sci. Technol. A 21, 955–966 (2003) https://doi.org/10.1116/1.1575215

Abstract

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X-ray diffraction study of residual stresses and microstructure in tungsten thin films sputter deposited on polyimide

P. Villain; P. Goudeau; J. Ligot; S. Benayoun; K. F. Badawi; J.-J. Hantzpergue

J. Vac. Sci. Technol. A 21, 967–972 (2003) https://doi.org/10.1116/1.1578655

Abstract

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Standards for surface analysis: ASTM committee E-42 on surface analysis

A. W. Czanderna

J. Vac. Sci. Technol. A 21, 973–978 (2003) https://doi.org/10.1116/1.1580838

Abstract

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Raman and photoluminescence of ZnO films deposited on Si (111) using low-pressure metalorganic chemical vapor deposition

Jiandong Ye; Shulin Gu; Shunmin Zhu; Tong Chen; Wei Liu; Feng Qin; Liqun Hu; Rong Zhang; Yi Shi; Youdou Zheng

J. Vac. Sci. Technol. A 21, 979–982 (2003) https://doi.org/10.1116/1.1580836

Abstract

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Surface morphology and dynamic scaling in growth of iron nitride thin films deposited by dc magnetron sputtering

X. Wang; W. T. Zheng; L. J. Gao; L. Wei; W. Guo; Y. B. Bai; W. D. Fei; S. H. Meng; X. D. He; J. C. Han

J. Vac. Sci. Technol. A 21, 983–987 (2003) https://doi.org/10.1116/1.1582452

Abstract

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Ionic densities and ionization fractions of sputtered titanium in radio frequency magnetron sputtering

Kunio Okimura; Tadashi Nakamura

J. Vac. Sci. Technol. A 21, 988–993 (2003) https://doi.org/10.1116/1.1580837

Abstract

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Thermal plasma fabricated lithium niobate-tantalate films on sapphire substrate

S. A. Kulinich; T. Yoshida; H. Yamamoto; K. Terashima

J. Vac. Sci. Technol. A 21, 994–1003 (2003) https://doi.org/10.1116/1.1582451

Abstract

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Characteristics of ultrathin ${SiO}_{2}$ films using dry rapid thermal oxidation and Pt catalyzed wet oxidation

M.-H. Cho; J. S. Shin; Y. S. Roh; I.-W. Lyo; K. Jeong; C. N. Whang; J. S. Lee; J. Y. Yoo; N. I. Lee; K. Fujihara; Dae Won Moon

J. Vac. Sci. Technol. A 21, 1004–1008 (2003) https://doi.org/10.1116/1.1582455

Abstract

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Oxygen environmental Auger electron spectroscopy: Eliminating the electron beam effects on ${Al}_{2} O_{3}$ during Auger analysis

Hansheng Guo; W. Maus-Friedrichs; V. Kempter; Y. Ji

J. Vac. Sci. Technol. A 21, 1009–1016 (2003) https://doi.org/10.1116/1.1582453

Abstract

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Investigation of ${SrBi}_{2} {Ta}_{2} O_{9}$ thin films etching mechanisms in ${Cl}_{2} / Ar$ plasma

A. M. Efremov; D. P. Kim; C. I. Kim

J. Vac. Sci. Technol. A 21, 1017–1023 (2003) https://doi.org/10.1116/1.1582454

Abstract

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Substrate temperature effects on surface reactivity of ${SiF}_{x}$ $(x=1, 2)$ radicals in fluorosilane plasmas

K. L. Williams; E. R. Fisher

J. Vac. Sci. Technol. A 21, 1024–1032 (2003) https://doi.org/10.1116/1.1582863

Abstract

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Growth and effects of remote-plasma oxidation on thin films of ${HfO}_{2}$ prepared by metal-organic chemical-vapor deposition

Kazuhiko Yamamoto; Masayuki Asai; Sadayoshi Horii; Hironobu Miya; Masaaki Niwa

J. Vac. Sci. Technol. A 21, 1033–1037 (2003) https://doi.org/10.1116/1.1584039

Abstract

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$C_{4} F_{8}$ dissociation in an inductively coupled plasma

M. T. Radtke; J. W. Coburn; David B. Graves

J. Vac. Sci. Technol. A 21, 1038–1047 (2003) https://doi.org/10.1116/1.1582456

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Electronic and structural properties of doped amorphous and nanocrystalline silicon deposited at low substrate temperatures by radio-frequency plasma-enhanced chemical vapor deposition

P. Alpuim; V. Chu; J. P. Conde

J. Vac. Sci. Technol. A 21, 1048–1054 (2003) https://doi.org/10.1116/1.1586275

Abstract

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Microstructure evolution of Al–Mg–B thin films by thermal annealing

Y. Tian; A. Constant; C. C. H. Lo; J. W. Anderegg; A. M. Russell; J. E. Snyder; P. Molian

J. Vac. Sci. Technol. A 21, 1055–1063 (2003) https://doi.org/10.1116/1.1586274

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Comparison of silicon dioxide layers grown from three polymethylsiloxane precursors in a high-density oxygen plasma

Y. Qi; Z. G. Xiao; T. D. Mantei

J. Vac. Sci. Technol. A 21, 1064–1068 (2003) https://doi.org/10.1116/1.1577133

Abstract

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A study for the bias control of indium–tin–oxide films synthesized by cesium assisted radio frequency magnetron sputtering

Deuk Yeon Lee; Se-Jong Lee; Kie Moon Song; Hong Koo Baik

J. Vac. Sci. Technol. A 21, 1069–1072 (2003) https://doi.org/10.1116/1.1584038

Abstract

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SHOP NOTES

Infrared thermal annealing device

M. J. Gladys; I. Clarke; D. J. O’Connor

J. Vac. Sci. Technol. A 21, 1073–1075 (2003) https://doi.org/10.1116/1.1575228

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ERRATA

Erratum: “Monitoring and purging dynamics of trace gaseous impurity in atmospheric pressure rapid thermal process” [J. Vac. Sci. Technol. A 21, 676 (2003)]

Yao Zhi Hu; Sing Pin Tay

J. Vac. Sci. Technol. A 21, 1076 (2003) https://doi.org/10.1116/1.1592528

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PAPERS FROM THE 49TH INTERNATIONAL SYMPOSIUM OF THE AVS

APPLIED SURFACE SCIENCE

Quantitative x-ray photoelectron spectroscopy: Simple algorithm to determine the amount of atoms in the outermost few nanometers

Sven Tougaard

J. Vac. Sci. Technol. A 21, 1081–1086 (2003) https://doi.org/10.1116/1.1564040

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Chemical bonding of perfluoropolyether with carbon underlying layer induced by visible laser light

Lei Zhu; J. Zhang; T. Liew; K. D. Ye

J. Vac. Sci. Technol. A 21, 1087–1091 (2003) https://doi.org/10.1116/1.1568745

Abstract

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Development of radio-frequency magnetron sputtered indium molybdenum oxide

Y. Yoshida; T. A. Gessert; C. L. Perkins; T. J. Coutts

J. Vac. Sci. Technol. A 21, 1092–1097 (2003) https://doi.org/10.1116/1.1586281

Abstract

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Characterizing topography-induced contrast in photoelectron emission microscopy

K. Siegrist; E. D. Williams; V. W. Ballarotto

J. Vac. Sci. Technol. A 21, 1098–1102 (2003) https://doi.org/10.1116/1.1562185

Abstract

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Progress in spectroscopic ellipsometry: Applications from vacuum ultraviolet to infrared

James N. Hilfiker; Corey L Bungay; Ron A. Synowicki; Thomas E. Tiwald; Craig M. Herzinger; Blaine Johs; Greg K. Pribil; John A. Woollam

J. Vac. Sci. Technol. A 21, 1103–1108 (2003) https://doi.org/10.1116/1.1569928

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Surface analytical characterization of ${SiO}_{2}$ gradient membrane coatings on gas sensor microarrays

M. Bruns; M. Frietsch; E. Nold; V. Trouillet; H. Baumann; R. White; A. Wright

J. Vac. Sci. Technol. A 21, 1109–1114 (2003) https://doi.org/10.1116/1.1563625

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dc field-emission analysis of GaAs and plasma–source ion-implanted stainless steel

C. Hernandez; T. Wang; T. Siggins; D. Bullard; H. F. Dylla; C. Reece; N. D. Theodore; D. M. Manos

J. Vac. Sci. Technol. A 21, 1115–1119 (2003) https://doi.org/10.1116/1.1577131

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Interfacial interactions of polymer coatings with oxide-free phosphate films on metal surfaces

Yuqing Wang; Peter M. A. Sherwood

J. Vac. Sci. Technol. A 21, 1120–1125 (2003) https://doi.org/10.1116/1.1563621

Abstract

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Valence-band x-ray photoelectron spectroscopic studies of different forms of sodium phosphate

Amy L. Asunskis; Karen J. Gaskell; Daniel J. Asunskis; Peter M. A. Sherwood

J. Vac. Sci. Technol. A 21, 1126–1132 (2003) https://doi.org/10.1116/1.1575221

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Valence-band x-ray photoelectron spectroscopic studies of vanadium phosphates and the formation of oxide-free phosphate films on metallic vanadium

Daniel J. Asunskis; Peter M. A. Sherwood

J. Vac. Sci. Technol. A 21, 1133–1138 (2003) https://doi.org/10.1116/1.1575223

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ADVANCING TOWARD SUSTAINABILITY TOPICAL CONFERENCE

Environment, health, and safety performance plays a vital role in sustaining the growth of the semiconductor industry

Coleen Miller; Walter Worth

J. Vac. Sci. Technol. A 21, 1139–1144 (2003) https://doi.org/10.1116/1.1568742

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BIOMATERIAL INTERFACES

Cell adhesion and spreading on polymer surfaces micropatterned by ion beams

C. Satriano; S. Carnazza; A. Licciardello; S. Guglielmino; G. Marletta

J. Vac. Sci. Technol. A 21, 1145–1151 (2003) https://doi.org/10.1116/1.1575217

Abstract

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ELECTROCHEMISTRY AND FLUID-SOLID INTERFACES

Fabrication of microstructured copper on an indium–tin–oxide surface using a micropatterned self-assembled monolayer as a template

Shuuichi Asakura; Mitsuhito Hirota; Akio Fuwa

J. Vac. Sci. Technol. A 21, 1152–1156 (2003) https://doi.org/10.1116/1.1584037

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MAGNETIC INTERFACES AND NANOSTRUCTURES

Dynamic and static measurements on epitaxial Fe/Si/Fe

Bijoy K. Kuanr; M. Buchmeier; D. E. Buergler; P. Gruenberg; R. Camley; Z. Celinski

J. Vac. Sci. Technol. A 21, 1157–1161 (2003) https://doi.org/10.1116/1.1562181

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Correlation between microstructural and magnetic properties in ${Fe/KCoF}_{3}$ bilayers

L. Malkinski; T. O’Keevan; R. E. Camley; Z. Celinski; J. He; W. L. Zhou; M. Hecker; C. M. Schneider; J. Szade; D. Skrzypek

J. Vac. Sci. Technol. A 21, 1162–1166 (2003) https://doi.org/10.1116/1.1563624

Abstract

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High-frequency noise measurements in spin-valve devices

N. A. Stutzke; S. L. Burkett; S. E. Russek

J. Vac. Sci. Technol. A 21, 1167–1171 (2003) https://doi.org/10.1116/1.1582458

Abstract

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MICRO-ELECTRO-MECHANICAL SYSTEMS

Metallization schemes for radio frequency microelectromechanical system switches

K. D. Leedy; R. Cortez; J. L. Ebel; R. E. Strawser; A. P. Walker; G. C. DeSalvo; R. M. Young

J. Vac. Sci. Technol. A 21, 1172–1177 (2003) https://doi.org/10.1116/1.1560714

Abstract

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Inorganic electret using ${SiO}_{2}$ thin films prepared by radio-frequency magnetron sputtering

Tadatsugu Minami; Tetsuharu Utsubo; Toshihiro Miyata; Yoshiaki Ohbayashi

J. Vac. Sci. Technol. A 21, 1178–1182 (2003) https://doi.org/10.1116/1.1586280

Abstract

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MANUFACTURING SCIENCE AND TECHNOLOGY

Real-time control of ion density and ion energy in chlorine inductively coupled plasma etch processing

Cheng-Hung Chang; Keh-Chyang Leou; Chaung Lin; Tsan-Lang Lin; Chih-Wei Tseng; Chuen-Horng Tsai

J. Vac. Sci. Technol. A 21, 1183–1187 (2003) https://doi.org/10.1116/1.1575222

Abstract

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NANOMETER-SCALE SCIENCE AND TECHNOLOGY

Nanoscale oxidation of zirconium surfaces: Kinetics and mechanisms

N. Farkas; G. Zhang; E. A. Evans; R. D. Ramsier; J. A. Dagata

J. Vac. Sci. Technol. A 21, 1188–1193 (2003) https://doi.org/10.1116/1.1560712

Abstract

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Surface electronic structure of a vicinal Cu crystal

J. Lobo; E. G. Michel; A. R. Bachmann; S. Speller; L. Roca; J. Kuntze; J. E. Ortega

J. Vac. Sci. Technol. A 21, 1194–1197 (2003) https://doi.org/10.1116/1.1560717

Abstract

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EMERGING OPPORTUNITIES AND ISSUES IN NANOTUBES AND NANOELECTRONICS

Surface modification of aligned carbon nanotube arrays for electrochemical sensing applications

Prabhu Soundarrajan; Ajeeta Patil; Liming Dai

J. Vac. Sci. Technol. A 21, 1198–1201 (2003) https://doi.org/10.1116/1.1569926

Abstract

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Effects of carbon-containing gases on the field-emission current of multiwalled carbon-nanotube arrays

L. M. Sheng; P. Liu; Y. M. Liu; L. Qian; Y. S. Huang; L. Liu; S. S. Fan

J. Vac. Sci. Technol. A 21, 1202–1204 (2003) https://doi.org/10.1116/1.1575226

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PLASMA SCIENCE AND TECHNOLOGY

Energetic neutral fluxes towards surfaces in a magnetically enhanced reactive ion etch-like reactor

Winfried Sabisch; Matthias Kratzer; Ralf Peter Brinkmann

J. Vac. Sci. Technol. A 21, 1205–1209 (2003) https://doi.org/10.1116/1.1565153

Abstract

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Formation of polycrystalline silicon ${germanium/HfO}_{2}$ gate stack structure using inductively coupled plasma etching

Jinghao Chen; Kian Ming Tan; Nan Wu; Won Jong Yoo; Daniel SH Chan

J. Vac. Sci. Technol. A 21, 1210–1217 (2003) https://doi.org/10.1116/1.1586283

Abstract

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Simplified model for calculating the pressure dependence of a direct current planar magnetron discharge

G. Buyle; D. Depla; K. Eufinger; J. Haemers; R. De Gryse; W. De Bosscher

J. Vac. Sci. Technol. A 21, 1218–1224 (2003) https://doi.org/10.1116/1.1572169

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Improvement of bond strength of plasma-sprayed hydroxyapatite/titanium composite coatings on titanium: Partial nitriding of titanium deposits by rf thermal plasma

M. Inagaki; Y. Yokogawa; T. Kameyama

J. Vac. Sci. Technol. A 21, 1225–1229 (2003) https://doi.org/10.1116/1.1575224

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Experimental study on a new sterilization process using plasma source ion implantation with $N_{2}$ gas

M. Yoshida; T. Tanaka; S. Watanabe; T. Takagi; M. Shinohara; S. Fujii

J. Vac. Sci. Technol. A 21, 1230–1236 (2003) https://doi.org/10.1116/1.1562183

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Improvement of luminance and luminous efficiency for optimal Penning gas mixtures in alternating current plasma display panels

Seung-Joon Lee; Jae-Kyung Lee; Eu-Seok Kang; Tae-Won Kim; Ho-Jung Hwang

J. Vac. Sci. Technol. A 21, 1237–1246 (2003) https://doi.org/10.1116/1.1586284

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PLASMA SCIENCE AND TECHNOLOGY I

Barium–strontium–titanate etching characteristics in chlorinated discharges

Luc Stafford; Joëlle Margot; Olivier Langlois; Mohamed Chaker

J. Vac. Sci. Technol. A 21, 1247–1252 (2003) https://doi.org/10.1116/1.1577130

Abstract

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Measuring vacuum ultraviolet radiation-induced damage

J. L. Lauer; J. L. Shohet; R. W. Hansen

J. Vac. Sci. Technol. A 21, 1253–1259 (2003) https://doi.org/10.1116/1.1565152

Abstract

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Microhollow cathode discharges

K. H. Schoenbach; M. Moselhy; W. Shi; R. Bentley

J. Vac. Sci. Technol. A 21, 1260–1265 (2003) https://doi.org/10.1116/1.1565154

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PLASMA SCIENCE AND TECHNOLOGY II

High-rate deposition of abrasion resistant coatings using a dual-source expanding thermal plasma reactor

M. Schaepkens; S. Selezneva; P. Moeleker; C. D. Iacovangelo

J. Vac. Sci. Technol. A 21, 1266–1271 (2003) https://doi.org/10.1116/1.1575220

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SURFACE ENGINEERING

Stability of carbon subatomic films on metal surface against bombardment by low-energy gas ions

V. P. Babaev; A. L. Suvorov; A. G. Zaluzhny; Ju. N. Dev’jatko; N. E. Lazarev; A. A. Zaluzhny

J. Vac. Sci. Technol. A 21, 1272–1278 (2003) https://doi.org/10.1116/1.1580489

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SURFACE SCIENCE

Shape transformation of silicon trenches during hydrogen annealing

Hitoshi Kuribayashi; Reiko Hiruta; Ryosuke Shimizu; Koichi Sudoh; Hiroshi Iwasaki

J. Vac. Sci. Technol. A 21, 1279–1283 (2003) https://doi.org/10.1116/1.1586278

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Kinetic Monte Carlo simulations of the autocatalytic adsorption effect: CO on ZnO

J. Stephan; U. Burghaus

J. Vac. Sci. Technol. A 21, 1284–1289 (2003) https://doi.org/10.1116/1.1562182

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Oxygen adsorption on Cu–9 at. %Al(111) studied by low energy electron diffraction and Auger electron spectroscopy

Michiko Yoshitake; Santanu Bera; Yasuhiro Yamauchi; Weijie Song

J. Vac. Sci. Technol. A 21, 1290–1293 (2003) https://doi.org/10.1116/1.1560719

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Bias voltage dependence of apparent local barrier height at constant tip–sample separation

Shinjiro Yagyu; Michiko Yoshitake

J. Vac. Sci. Technol. A 21, 1294–1297 (2003) https://doi.org/10.1116/1.1563622

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Electronic structure of ${Si}_{x} {Sn}_{(1−x)} / Si (111)$ - $(\sqrt{3} \times \sqrt{3})$ R $30°$ phases

J. Lobo; A. Tejeda; A. Mugarza; E. G. Michel

J. Vac. Sci. Technol. A 21, 1298–1301 (2003) https://doi.org/10.1116/1.1562180

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SURFACE SCIENCE I

Using chemical probes to investigate properties of monolayer metal thin films

Neetha A. Khan; Jingguang G. Chen

J. Vac. Sci. Technol. A 21, 1302–1306 (2003) https://doi.org/10.1116/1.1566972

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Adsorption and reaction of NO on oxidized and reduced ${SrTiO}_{3} (100)$ surfaces

S. Azad; J. Szanyi; C. H. F. Peden; L.-Q. Wang

J. Vac. Sci. Technol. A 21, 1307–1311 (2003) https://doi.org/10.1116/1.1560718

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Observation of an isotope effect in femtosecond laser-induced desorption of $O_{2} / Pd (111)$

Daniel P. Quinn; Tony F. Heinz

J. Vac. Sci. Technol. A 21, 1312–1316 (2003) https://doi.org/10.1116/1.1580486

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Effects of adsorbates on charge exchange in ${Li}^{+}$ ion scattering from Ni(100)

Ye Yang; Jory A. Yarmoff

J. Vac. Sci. Technol. A 21, 1317–1321 (2003) https://doi.org/10.1116/1.1579012

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SURFACE SCIENCE II

Coadsorption of CO and hydrogen on the Zn-terminated surface of ZnO: A molecular beam study

M. Kunat; U. Burghaus

J. Vac. Sci. Technol. A 21, 1322–1325 (2003) https://doi.org/10.1116/1.1572168

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Thermal stability of thin Ti films on Al single crystal surfaces

C. V. Ramana; Bum Sik Choi; R. J. Smith; R. Hutchinson; S. P. Stuk; Byoung Suk Park; Adli A. Saleh; Dong Ryul Jeon

J. Vac. Sci. Technol. A 21, 1326–1331 (2003) https://doi.org/10.1116/1.1564039

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Scanning tunneling microscopy studies of the Cu:Si(5 5 12) system

P. H. Woodworth; J. C. Moore; A. A. Baski

J. Vac. Sci. Technol. A 21, 1332–1335 (2003) https://doi.org/10.1116/1.1564041

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THIN FILMS

p-type semiconducting ${Cu}_{2} O–CoO$ thin films prepared by magnetron sputtering

Shingo Suzuki; Toshihiro Miyata; Tadatsugu Minami

J. Vac. Sci. Technol. A 21, 1336–1341 (2003) https://doi.org/10.1116/1.1580491

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Chemical vapor deposition-formed p-type ZnO thin films

X. Li; Y. Yan; T. A. Gessert; C. L. Perkins; D. Young; C. DeHart; M. Young; T. J. Coutts

J. Vac. Sci. Technol. A 21, 1342–1346 (2003) https://doi.org/10.1116/1.1584036

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Super-smooth indium–tin oxide thin films by negative sputter ion beam technology

M. H. Sohn; D. Kim; S. J. Kim; N. W. Paik; S. Gupta

J. Vac. Sci. Technol. A 21, 1347–1350 (2003) https://doi.org/10.1116/1.1577127

Abstract

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Indium tin oxide films with low resistivity and low internal stress

Shinji Takayama; Toshifumi Sugawara; Akira Tanaka; Tokuji Himuro

J. Vac. Sci. Technol. A 21, 1351–1354 (2003) https://doi.org/10.1116/1.1563623

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Role of carbon in boron suboxide thin films

Denis Music; Veronika M. Kugler; Zsolt Czigány; Axel Flink; Oskar Werner; Jochen M. Schneider; Lars Hultman; Ulf Helmersson

J. Vac. Sci. Technol. A 21, 1355–1358 (2003) https://doi.org/10.1116/1.1560715

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Effects of growth temperature on the properties of atomic layer deposition grown ${ZrO}_{2}$ films

G. Scarel; S. Ferrari; S. Spiga; C. Wiemer; G. Tallarida; M. Fanciulli

J. Vac. Sci. Technol. A 21, 1359–1365 (2003) https://doi.org/10.1116/1.1564032

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Atomic layer deposition of ${Al}_{2} O_{3}$ thin films using dimethylaluminum isopropoxide and water

Wontae Cho; Kiwhan Sung; Ki-Seok An; Sun Sook Lee; Taek-Mo Chung; Yunsoo Kim

J. Vac. Sci. Technol. A 21, 1366–1370 (2003) https://doi.org/10.1116/1.1562184

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Origin of crystalline quality deterioration in epitaxial growth of ${CeO}_{2}$ layers on Si substrates

Tomoyasu Inoue; Naomichi Sakamoto; Akihiro Horikawa; Hirofumi Takakura; Kosei Takahashi; Masayuki Ohashi; Shigenari Shida

J. Vac. Sci. Technol. A 21, 1371–1375 (2003) https://doi.org/10.1116/1.1564034

Abstract

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Large remanent polarization of cerium-modified bismuth–titanate thin films for ferroelectric random access memories

Kyoung-Tae Kim; Chang-Il Kim; Dong-Hee Kang; Il-Wun Shim

J. Vac. Sci. Technol. A 21, 1376–1380 (2003) https://doi.org/10.1116/1.1564038

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Analysis of stresses in Ru thin films prepared by chemical vapor deposition

Ha Jin Lim; Sang Yeol Kang; Cheol Seong Hwang; Hyeong Joon Kim

J. Vac. Sci. Technol. A 21, 1381–1385 (2003) https://doi.org/10.1116/1.1560713

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Effects of graphite content on carbon nitride films prepared by hot carbon filament chemical vapor deposition

Shinichiro Aizawa; Masami Aono; Nobuaki Kitazawa; Yoshihisa Watanabe; Osamu Shimizu; Yoshihisa Suda

J. Vac. Sci. Technol. A 21, 1386–1388 (2003) https://doi.org/10.1116/1.1569927

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Effects of starting material of aluminum doped zinc oxide underlayer on the electric properties of palladium doped silver film

T. Oyama; M. Maekawa; T. Yanagisawa

J. Vac. Sci. Technol. A 21, 1389–1392 (2003) https://doi.org/10.1116/1.1560716

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X-ray photoelectron spectroscopy study of the first stages of ZnO growth and nanostructure dependence of the effects of polarization at $ZnO / {SiO}_{2}$ and $ZnO / {Al}_{2} O_{3}$ interfaces

A. I. Martin-Concepción; F. Yubero; J. P. Espinós; A. R. González-Elipe; S. Tougaard

J. Vac. Sci. Technol. A 21, 1393–1398 (2003) https://doi.org/10.1116/1.1564033

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Properties of Co-deposited indium tin oxide and zinc oxide films using a bipolar pulse power supply and a dual magnetron sputter source

Man-Soo Hwang; Heui Seob Jeong; Won Mok Kim; Yong Woon Seo

J. Vac. Sci. Technol. A 21, 1399–1403 (2003) https://doi.org/10.1116/1.1575225

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High-rate deposition of ZnO thin films by vacuum arc plasma evaporation

Toshihiro Miyata; Satoshi Ida; Tadatsugu Minami

J. Vac. Sci. Technol. A 21, 1404–1408 (2003) https://doi.org/10.1116/1.1580492

Abstract

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Photocatalytic properties of ${TiO}_{2} / {WO}_{3}$ bilayers deposited by reactive sputtering

T. Takahashi; H. Nakabayashi; N. Yamada; J. Tanabe

J. Vac. Sci. Technol. A 21, 1409–1413 (2003) https://doi.org/10.1116/1.1579013

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Influence of working gas pressure on structure and properties of ${WO}_{3}$ films reactively deposited by rf magnetron sputtering

T. Takahashi; J. Tanabe; N. Yamada; H. Nakabayashi

J. Vac. Sci. Technol. A 21, 1414–1418 (2003) https://doi.org/10.1116/1.1575216

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Correlation between crystallographic orientations and Raman spectra of ${TiO}_{2}$ sputtered films with changing degrees of plasma exposure

T. Takahashi; H. Nakabayashi; J. Tanabe; N. Yamada; W. Mizuno

J. Vac. Sci. Technol. A 21, 1419–1423 (2003) https://doi.org/10.1116/1.1584035

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Thermal behavior of hafnium-based ultrathin films on silicon

R. P. Pezzi; J. Morais; S. R. Dahmen; K. P. Bastos; L. Miotti; G. V. Soares; I. J. R. Baumvol; F. L. Freire, Jr.

J. Vac. Sci. Technol. A 21, 1424–1430 (2003) https://doi.org/10.1116/1.1575218

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Epitaxial growth of thin Ag and Au films on Si(111) using thin copper silicide buffer layers

Kjeld Pedersen; Per Morgen; Thomas G. Pedersen; Zheshen Li; Søren V. Hoffmann

J. Vac. Sci. Technol. A 21, 1431–1435 (2003) https://doi.org/10.1116/1.1564035

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VACUUM TECHNOLOGY

Present status of the KEK B-factory vacuum system

Y. Suetsugu; K. Kanazawa; S. Kato; H. Hisamatsu; M. Shimamoto; M. Shirai

J. Vac. Sci. Technol. A 21, 1436–1441 (2003) https://doi.org/10.1116/1.1577129

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Development of sputtering systems for large-area deposition of ${CuIn}_{1−x} {Ga}_{x} {Se}_{1−y} S_{y}$ thin-film solar cells

Neelkanth G. Dhere; Vivek S. Gade; Anant H. Jahagirdar; Ankur A. Kadam; Harshad P. Patil; Sachin S. Kulkarni

J. Vac. Sci. Technol. A 21, 1442–1446 (2003) https://doi.org/10.1116/1.1577128

Abstract

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Vacuum chamber with distributed titanium sublimation pumping for the G-line wiggler at Cornell High Energy Synchrotron Source

Y. Li; Y. He; N. B. Mistry

J. Vac. Sci. Technol. A 21, 1447–1451 (2003) https://doi.org/10.1116/1.1563620

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Comparison between Monte Carlo and analytical calculation of the conductance of cylindrical and conical tubes

J. Gómez-Goñi; P. J. Lobo

J. Vac. Sci. Technol. A 21, 1452–1457 (2003) https://doi.org/10.1116/1.1568746

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Pumping performance investigation of a turbobooster vacuum pump equipped with spiral-grooved rotor and inner housing by the computational fluids dynamics method

H.-P. Cheng; M.-T. Chiang

J. Vac. Sci. Technol. A 21, 1458–1463 (2003) https://doi.org/10.1116/1.1586279

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DIELECTRICS/ELECTRONICS

Effects of high working pressure on dielectric properties of sputtered $({Ba,Sr)TiO}_{3}$ films on Ir electrodes

Chih-Haung Lai; Y. C. Wu; S. Ma

J. Vac. Sci. Technol. A 21, 1464–1468 (2003) https://doi.org/10.1116/1.1586277

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Study of damage reduction of $({Ba}_{0.6,} {Sr}_{0.4}) {TiO}_{3}$ thin films etched in ${Ar/CF}_{4}$ plasmas

Pil-Seung Kang; Kyoung-Tae Kim; Dong-Pyo Kim; Chang-Il Kim

J. Vac. Sci. Technol. A 21, 1469–1474 (2003) https://doi.org/10.1116/1.1568744

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Etch characteristics of ${Bi}_{4−x} {Eu}_{x} {Ti}_{3} O_{12}$ (BET) thin films using inductively coupled plasma

Kyu-Tae Lim; Kyoung-Tae Kim; Dong-Pyo Kim; Chang-II Kim

J. Vac. Sci. Technol. A 21, 1475–1481 (2003) https://doi.org/10.1116/1.1579011

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Effect of $N_{2}$ annealing on AlZrO oxide

J. Pétry; O. Richard; W. Vandervorst; T. Conard; J. Chen; V. Cosnier

J. Vac. Sci. Technol. A 21, 1482–1487 (2003) https://doi.org/10.1116/1.1586276

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ELECTROCHEMISTRY AND FLUID–SOLID INTERFACES/SURFACE SCIENCE

Potential application of tungsten carbides as electrocatalysts

Henry H. Hwu; Jiangguang G. Chen

J. Vac. Sci. Technol. A 21, 1488–1493 (2003) https://doi.org/10.1116/1.1582457

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Investigation of oxide $(V_{2} O_{5})$ thin films as electrodes for rechargeable microbatteries using Li

Arturo Talledo; Héctor Valdivia; Carsten Benndorf

J. Vac. Sci. Technol. A 21, 1494–1499 (2003) https://doi.org/10.1116/1.1586282

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Combined atomic force microscope and acoustic wave devices: Application to electrodeposition

J.-M. Friedt; L. Francis; K.-H. Choi; F. Frederix; A. Campitelli

J. Vac. Sci. Technol. A 21, 1500–1505 (2003) https://doi.org/10.1116/1.1579014

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ELECTRONICS/SEMICONDUCTORS

Scanning tunneling microscopy imaging of charged defects on clean $Si (100)-(2×1)$

G. W. Brown; H. Grube; M. E. Hawley; S. R. Schofield; N. J. Curson; M. Y. Simmons; R. G. Clark

J. Vac. Sci. Technol. A 21, 1506–1509 (2003) https://doi.org/10.1116/1.1566973

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ELECTRONICS/SEMICONDUCTORS/MAGNETIC INTERFACES AND NANOSTRUCTURES

Electrical contact behavior of Ni/C60/4H–SiC structures

Weijie Lu; W. C. Mitchel; G. R. Landis; T. R. Crenshaw; W. Eugene Collins

J. Vac. Sci. Technol. A 21, 1510–1514 (2003) https://doi.org/10.1116/1.1572167

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MAGNETIC INTERFACES AND NANOSTRUCTURES/NANOMETER-SCALE SCIENCE AND TECHNOLOGY

Self-assembly and magnetism in core-shell microspheres

E. L. Bizdoaca; M. Spasova; M. Farle; M. Hilgendorff; L. M. Liz-Marzan; F. Caruso

J. Vac. Sci. Technol. A 21, 1515–1518 (2003) https://doi.org/10.1116/1.1564031

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Study of a magnetic cluster/superconducting matrix interface: Co/Nb system

V. Dupuis; M. Jamet; L. Favre; J. Tuaillon-Combes; P. Melinon; A. Perez

J. Vac. Sci. Technol. A 21, 1519–1523 (2003) https://doi.org/10.1116/1.1580490

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MAGNETIC INTERFACES AND NANOSTRUCTURES/THIN FILMS

Surface morphology and magnetization reversal

Rosa Alejandra Lukaszew; Zhengdong Zhang; Codrin Cionca; Vladimir Stoica; Roy Clarke

J. Vac. Sci. Technol. A 21, 1524–1527 (2003) https://doi.org/10.1116/1.1580487

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MICRO-ELECTRO-MECHANICAL SYSTEMS/THIN FILMS

Adhesion and friction studies of microelectromechanical systems/nanoelectromechanical systems materials using a novel microtriboapparatus

Huiwen Liu; Bharat Bhushan

J. Vac. Sci. Technol. A 21, 1528–1538 (2003) https://doi.org/10.1116/1.1560711

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MANUFACTURING SCIENCE AND TECHNOLOGY/SURFACE ENGINEERING

Product development and yield enhancement through failure analysis of integrated circuits with scanning capacitance microscopy

P. Tangyunyong; C. Y. Nakakura

J. Vac. Sci. Technol. A 21, 1539–1544 (2003) https://doi.org/10.1116/1.1569925

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In situ studies of the amorphous to microcrystalline transition of hot-wire chemical vapor deposition Si:H films using real-time spectroscopic ellipsometry

D. H. Levi; B. P. Nelson; J. D. Perkins; H. R. Moutinho

J. Vac. Sci. Technol. A 21, 1545–1549 (2003) https://doi.org/10.1116/1.1564037

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PLASMA SCIENCE AND TECHNOLOGY/MICRO-ELECTRO-MECHANICAL SYSTEMS

Critical tasks in high aspect ratio silicon dry etching for microelectromechanical systems

Ivo W. Rangelow

J. Vac. Sci. Technol. A 21, 1550–1562 (2003) https://doi.org/10.1116/1.1580488

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PLASMA SCIENCE AND TECHNOLOGY/THIN FILMS

Reduction of etching damage in lead–zirconate–titanate thin films with inductively coupled plasma

Kyu-Tae Lim; Kyoung-Tae Kim; Dong-Pyo Kim; Chang-Il Kim

J. Vac. Sci. Technol. A 21, 1563–1567 (2003) https://doi.org/10.1116/1.1568743

Abstract

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Inductively coupled ${Cl}_{2} / Ar$ plasma: Experimental investigation and modeling

A. M. Efremov; Dong-Pyo Kim; Chang-Il Kim

J. Vac. Sci. Technol. A 21, 1568–1573 (2003) https://doi.org/10.1116/1.1564030

Abstract

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SURFACE ENGINEERING/NANOMETER-SCALE SCIENCE AND TECHNOLOGY

High-temperature fiber matrices: Electrospinning and rare-earth modification

W. Kataphinan; R. Teye-Mensah; E. A. Evans; R. D. Ramsier; D. H. Reneker; D. J. Smith

J. Vac. Sci. Technol. A 21, 1574–1578 (2003) https://doi.org/10.1116/1.1575219

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SURFACE ENGINEERING/THIN FILMS

Profile coatings and their applications

Chian Liu; R. Conley; L. Assoufid; A. T. Macrander; G. E. Ice; J. Z. Tischler; K. Zhang

J. Vac. Sci. Technol. A 21, 1579–1584 (2003) https://doi.org/10.1116/1.1564036

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LETTERS

Transitional change to amorphous fluorinated carbon film deposition under energetic irradiation of mass-analyzed carbon monofluoride ions on silicon dioxide surfaces

Kenji Ishikawa; Kazuhiro Karahashi; Hideo Tsuboi; Ken-ichi Yanai; Moritaka Nakamura

J. Vac. Sci. Technol. A 21, L1–L3 (2003) https://doi.org/10.1116/1.1578653

Abstract

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