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Mass spectrometric studies of low pressure ${CH}_{4},$ ${CH}_{4} / H_{2},$ and $H_{2}$ plasma beams generated by an inductively coupled radio frequency discharge

Katsuyuki Okada; Shojiro Komatsu

J. Vac. Sci. Technol. A 20, 1835–1839 (2002) https://doi.org/10.1116/1.1506171

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Investigation of the hydrogenation properties of Zr films under unclean plasma conditions

L. Q. Shi; G. Q. Yan; J. Y. Zhou; S. Z. Luo; S. M. Peng; W. Ding; X. G. Long

J. Vac. Sci. Technol. A 20, 1840–1845 (2002) https://doi.org/10.1116/1.1506174

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Electron emission suppression characteristics of molybdenum grids coated with carbon film by ion beam assisted deposition

Xianghuai Liu; Congxin Ren; Bingyao Jiang; Hong Zhu; Yanyuan Liu; Jingxian Wu

J. Vac. Sci. Technol. A 20, 1846–1849 (2002) https://doi.org/10.1116/1.1506173

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Investigation and simulation of ${XeF}_{2}$ isotropic etching of silicon

Behraad Bahreyni; C. Shafai

J. Vac. Sci. Technol. A 20, 1850–1854 (2002) https://doi.org/10.1116/1.1506172

Abstract

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Quantitative analysis of annealing-induced structure disordering in ion-implanted amorphous silicon

Ju-Yin Cheng; J. M. Gibson; P. M. Baldo; B. J. Kestel

J. Vac. Sci. Technol. A 20, 1855–1859 (2002) https://doi.org/10.1116/1.1507331

Abstract

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Thermal stability of $\Pr_{2} O_{3}$ films grown on Si(100) substrate

A. Goryachko; J. P. Liu; D. Krüger; H. J. Osten; E. Bugiel; R. Kurps; V. Melnik

J. Vac. Sci. Technol. A 20, 1860–1866 (2002) https://doi.org/10.1116/1.1507332

Abstract

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Angle-resolved x-ray photoelectron spectroscopy of ultrathin ${Al}_{2} O_{3}$ films grown by atomic layer deposition

O. Renault; L. G. Gosset; D. Rouchon; A. Ermolieff

J. Vac. Sci. Technol. A 20, 1867–1876 (2002) https://doi.org/10.1116/1.1507330

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Investigation of thermal flux to the substrate during sputter deposition of aluminum

Samuel D. Ekpe; Steven K. Dew

J. Vac. Sci. Technol. A 20, 1877–1885 (2002) https://doi.org/10.1116/1.1507342

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Structural and luminescent properties of ZnTe film grown on silicon by metalorganic chemical vapor deposition

C. X. Shan; X. W. Fan; J. Y. Zhang; Z. Z. Zhang; X. H. Wang; J. G. Ma; Y. M. Lu,; Y. C. Liu; D. Z. Shen; X. G. Kong; G. Z. Zhong

J. Vac. Sci. Technol. A 20, 1886–1890 (2002) https://doi.org/10.1116/1.1507344

Abstract

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Wet chemical etching studies of Zr and Hf-silicate gate dielectrics

M. A. Quevedo-Lopez; M. El-Bouanani; R. M. Wallace; B. E. Gnade

J. Vac. Sci. Technol. A 20, 1891–1897 (2002) https://doi.org/10.1116/1.1507343

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A biaxial rotation for depositing homogeneous large-area double-sided ${YBa}_{2} {Cu}_{3} O_{7−X}$ thin films

B. W. Tao; Y. R. Li; X. Z. Liu; S. M. He; J. Geerk

J. Vac. Sci. Technol. A 20, 1898–1902 (2002) https://doi.org/10.1116/1.1507341

Abstract

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Thermal reaction of nickel and ${Si}_{0.75} {Ge}_{0.25}$ alloy

K. L. Pey; W. K. Choi; S. Chattopadhyay; H. B. Zhao; E. A. Fitzgerald; D. A. Antoniadis; P. S. Lee

J. Vac. Sci. Technol. A 20, 1903–1910 (2002) https://doi.org/10.1116/1.1507339

Abstract

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Time development of microstructure and resistivity for very thin Cu films

S. M. Rossnagel; T. S. Kuan

J. Vac. Sci. Technol. A 20, 1911–1915 (2002) https://doi.org/10.1116/1.1507340

Abstract

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Effects of plasma exposure on structural and optical properties of ${TiO}_{2}$ films deposited by off-axis target sputtering

T. Takahashi; H. Nakabayashi; W. Mizuno

J. Vac. Sci. Technol. A 20, 1916–1920 (2002) https://doi.org/10.1116/1.1510530

Abstract

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Microstructure and properties of Ti–Si–N nanocomposite films

Xiaoping Hu; Zenghu Han; Geyang Li; Mingyuan Gu

J. Vac. Sci. Technol. A 20, 1921–1926 (2002) https://doi.org/10.1116/1.1508802

Abstract

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Anomalies in modeling of anisotropic etching of silicon: Facet boundary effects

Z. Elalamy; L. M. Landsberger; A. Pandy; M. Kahrizi; I. Stateikina; S. Michel

J. Vac. Sci. Technol. A 20, 1927–1933 (2002) https://doi.org/10.1116/1.1513790

Abstract

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Growth of ${Be}_{2} C (100)$ films on Be(0001) substrate using $C_{60}$ as precursor

C.-T. Tzeng; J.-Y. Yuh; W.-S. Lo; R.-Y. Chu; K.-D. Tsuei

J. Vac. Sci. Technol. A 20, 1934–1938 (2002) https://doi.org/10.1116/1.1513642

Abstract

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Characterization of $Pb (Zr, Ti) O_{3}$ thin films fabricated by plasma enhanced chemical vapor deposition on Ir-based electrodes

Hee-Chul Lee; Won-Jong Lee

J. Vac. Sci. Technol. A 20, 1939–1947 (2002) https://doi.org/10.1116/1.1513646

Abstract

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Correlation of surface chemistry of GaAs substrates with growth mode and stacking fault density in ZnSe epilayers

Soon-Ku Hong; Ji-Ho Chang; Takashi Hanada; Elisabeth Kurtz; Masaoki Oku; Takafumi Yao

J. Vac. Sci. Technol. A 20, 1948–1954 (2002) https://doi.org/10.1116/1.1513645

Abstract

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Plasma polymerization and deposition of linear, cyclic and aromatic fluorocarbons on (100)-oriented single crystal silicon substrates

G. H. Yang; S. W. Oh; E. T. Kang; K. G. Neoh

J. Vac. Sci. Technol. A 20, 1955–1963 (2002) https://doi.org/10.1116/1.1513640

Abstract

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Studies on electron behaviors at downstream region of a neutral loop discharge plasma

Tatsuya Sakoda; Youl-Moon Sung

J. Vac. Sci. Technol. A 20, 1964–1968 (2002) https://doi.org/10.1116/1.1513644

Abstract

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Electron-temperature control in 915 MHz electron cyclotron resonance plasma

N. Itagaki; Y. Kawai; S. Kawakami; Nobuo Ishii

J. Vac. Sci. Technol. A 20, 1969–1973 (2002) https://doi.org/10.1116/1.1513791

Abstract

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Integrated AlN/diamond heat spreaders for silicon device processing

S. N. Yoganand; K. Jagannadham; A. Karoui; H. Wang

J. Vac. Sci. Technol. A 20, 1974–1982 (2002) https://doi.org/10.1116/1.1513643

Abstract

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Study on the characteristics of alumdinum thin films prepared by atomic layer deposition

Yong Ju Lee; Sang-Won Kang

J. Vac. Sci. Technol. A 20, 1983–1988 (2002) https://doi.org/10.1116/1.1513636

Abstract

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Low-temperature ${Ar/N}_{2}$ remote plasma nitridation of ${SiO}_{2}$ thin films

Amit Khandelwal; Hiro Niimi; Gerald Lucovsky; H. Henry Lamb

J. Vac. Sci. Technol. A 20, 1989–1996 (2002) https://doi.org/10.1116/1.1513635

Abstract

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Subsurface interstitials as promoters of three-dimensional growth of Ti on Si(111): An x-ray standing wave, x-ray photoelectron spectroscopy, and atomic force microscopy investigation

G. Kuri; Th. Schmidt; V. Hagen; G. Materlik; R. Wiesendanger; J. Falta

J. Vac. Sci. Technol. A 20, 1997–2003 (2002) https://doi.org/10.1116/1.1513638

Abstract

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Highly 〈100〉-oriented growth of polycrystalline silicon films on glass by pulsed magnetron sputtering

P. Reinig; B. Selle; F. Fenske; W. Fuhs; V. Alex; M. Birkholz

J. Vac. Sci. Technol. A 20, 2004–2006 (2002) https://doi.org/10.1116/1.1513634

Abstract

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Epitaxial growth of metastable δ-TaN layers on MgO(001) using low-energy, high-flux ion irradiation during ultrahigh vacuum reactive magnetron sputtering

C.-S. Shin; Y.-W. Kim; N. Hellgren; D. Gall; I. Petrov; J. E. Greene

J. Vac. Sci. Technol. A 20, 2007–2017 (2002) https://doi.org/10.1116/1.1513639

Abstract

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In situ pressure measurements in small gettered volumes

Vincenc Nemanič; Marko Žumer; Bojan Zajec

J. Vac. Sci. Technol. A 20, 2018–2022 (2002) https://doi.org/10.1116/1.1515802

Abstract

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Structural, electronic and magnetic properties of chalcopyrite magnetic semiconductors: A first-principles study

Silvia Picozzi; Alessandra Continenza; Yu-Jun Zhao; Wen-Tong Geng; Arthur J. Freeman

J. Vac. Sci. Technol. A 20, 2023–2026 (2002) https://doi.org/10.1116/1.1515801

Abstract

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Temperature effect on growth of well-ordered thin ${Al}_{2} O_{3}$ film on NiAl(110)

Thi Thi Lay; M. Yoshitake; B. Mebarki

J. Vac. Sci. Technol. A 20, 2027–2031 (2002) https://doi.org/10.1116/1.1515907

Abstract

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Spatial survey of a magnetron plasma sputtering system using a Langmuir probe

D. J. Field; S. K. Dew; R. E. Burrell

J. Vac. Sci. Technol. A 20, 2032–2041 (2002) https://doi.org/10.1116/1.1515800

Abstract

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Effect of carbon enrichment induced by photoresist on highly selective ${SiO}_{2}$ etching

Changwoong Chu; Kyeong-Koo Chi; Joo-Tae Moon

J. Vac. Sci. Technol. A 20, 2042–2048 (2002) https://doi.org/10.1116/1.1517255

Abstract

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Creation of stable, low work function surfaces on Si by implantation of 3 keV ${Cs}^{+}$

R. G. Musket; M. Balooch

J. Vac. Sci. Technol. A 20, 2049–2051 (2002) https://doi.org/10.1116/1.1517259

Abstract

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Fluorocarbon-based plasma etching of ${SiO}_{2} :$ Comparison of $C_{4} F_{6} /Ar$ and $C_{4} F_{8} /Ar$ discharges

Xi Li; Xuefeng Hua; Li Ling; Gottlieb S. Oehrlein; Marcos Barela; Harold M. Anderson

J. Vac. Sci. Technol. A 20, 2052–2061 (2002) https://doi.org/10.1116/1.1517256

Abstract

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Column angle variations in porous chevron thin films

K. D. Harris; D. Vick; T. Smy; M. J. Brett

J. Vac. Sci. Technol. A 20, 2062–2067 (2002) https://doi.org/10.1116/1.1517258

Abstract

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Observation of step-flow growth in femtosecond pulsed laser deposition of Si on Si(100)-2×1

M. S. Hegazy; H. E. Elsayed-Ali

J. Vac. Sci. Technol. A 20, 2068–2071 (2002) https://doi.org/10.1116/1.1517257

Abstract

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Surface morphology of ion-beam deposited carbon films under high temperature

Meiyong Liao; Chunlin Chai; Shaoyan Yang; Zhikai Liu; Fuguang Qin; Zhanguo Wang

J. Vac. Sci. Technol. A 20, 2072–2074 (2002) https://doi.org/10.1116/1.1517996

Abstract

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Study on time of flight property of uniform magnetic sector field analyzers up to the third-order approximation

Min Cheng; Tiantong Tang; Zhenhua Yao; Zhenhua Wang

J. Vac. Sci. Technol. A 20, 2075–2078 (2002) https://doi.org/10.1116/1.1517999

Abstract

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Multiple cavity modes in the helicon plasma generated at very high radio frequency

G. S. Eom; W. Choe

J. Vac. Sci. Technol. A 20, 2079–2083 (2002) https://doi.org/10.1116/1.1517994

Abstract

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Correlation between structure, stress and deposition parameters in direct current sputtered zinc oxide films

O. Kappertz; R. Drese; M. Wuttig

J. Vac. Sci. Technol. A 20, 2084–2095 (2002) https://doi.org/10.1116/1.1517997

Abstract

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Atomic layer deposition of zirconium silicate films using zirconium tetrachloride and tetra-n-butyl orthosilicate

Won-Kyu Kim; Sang-Woo Kang; Shi-Woo Rhee; Nae-In Lee; Jong-Ho Lee; Ho-Kyu Kang

J. Vac. Sci. Technol. A 20, 2096–2100 (2002) https://doi.org/10.1116/1.1517998

Abstract

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Photoelastic modulation-reflection absorption infrared spectroscopy of CO on Pd(111)

D. Stacchiola; A. W. Thompson; M. Kaltchev; W. T. Tysoe

J. Vac. Sci. Technol. A 20, 2101–2105 (2002) https://doi.org/10.1116/1.1517995

Abstract

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Plasma–surface kinetics and simulation of feature profile evolution in ${Cl}_{2} + HBr$ etching of polysilicon

Weidong Jin; Steven A. Vitale; Herbert H. Sawin

J. Vac. Sci. Technol. A 20, 2106–2114 (2002) https://doi.org/10.1116/1.1517993

Abstract

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Dramatic change of electrical properties in La–Ba–Mn–O thin films prepared using bias sputtering

Jong Cheol Lee; Sang Yub Ie; Seung Iel Park; Yeonjin Yi; Gyu In Jang; Ho Shik Song; Dong Gyun You; Kwangho Jeong

J. Vac. Sci. Technol. A 20, 2115–2118 (2002) https://doi.org/10.1116/1.1519866

Abstract

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Conductance calculation of a long tube with equilateral triangle cross section

Ping Fan; Ji-Guo Chu; Jian-Da Shao

J. Vac. Sci. Technol. A 20, 2119–2122 (2002) https://doi.org/10.1116/1.1519864

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Effect of surface polymerization on plasma and process stability in polycrystalline-silicon etching

Songlin Xu; Thorsten Lill; Shashank Deshmukh; Olivier Joubert

J. Vac. Sci. Technol. A 20, 2123–2130 (2002) https://doi.org/10.1116/1.1519865

Abstract

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BRIEF REPORTS AND COMMENTS

High-sensitivity x-ray photoelectron spectroscopy characterization of a quantum device structure

M. Wintrebert-Fouquet; K. S. A. Butcher

J. Vac. Sci. Technol. A 20, 2131–2133 (2002) https://doi.org/10.1116/1.1508801

Abstract

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RAPID COMMUNICATIONS

Low temperature deposition of $α- {Al}_{2} O_{3}$ thin films by sputtering using a ${Cr}_{2} O_{3}$ template

P. Jin; G. Xu; M. Tazawa; K. Yoshimura; D. Music; J. Alami; U. Helmersson

J. Vac. Sci. Technol. A 20, 2134–2136 (2002) https://doi.org/10.1116/1.1513641

Abstract

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Refractive index control of silicon nitride films prepared by radio-frequency reactive sputtering

P. S. Nayar

J. Vac. Sci. Technol. A 20, 2137–2139 (2002) https://doi.org/10.1116/1.1513637

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