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Issues
May 2002
ISSN 0734-2101
EISSN 1520-8559
ARTICLES
Magnetic and structural properties of Fe, Ni, and Mn-implanted SiC
N. Theodoropoulou; A. F. Hebard; S. N. G. Chu; M. E. Overberg; C. R. Abernathy; S. J. Pearton; R. G. Wilson; J. M. Zavada; Y. D. Park
J. Vac. Sci. Technol. A 20, 579–582 (2002)
https://doi.org/10.1116/1.1465447
Initial growth and texture formation during reactive magnetron sputtering of TiN on Si(111)
J. Vac. Sci. Technol. A 20, 583–588 (2002)
https://doi.org/10.1116/1.1458944
Effect of interfacial interactions on the initial growth of Cu on clean and 3-mercaptopropyltrimethoxysilane-modified substrates
J. Vac. Sci. Technol. A 20, 589–596 (2002)
https://doi.org/10.1116/1.1458941
Faraday cup detector array with electronic multiplexing for multichannel mass spectrometry
J. Vac. Sci. Technol. A 20, 597–604 (2002)
https://doi.org/10.1116/1.1458947
Formation and oxidation properties of thin films prepared by dc reactive sputtering
J. Vac. Sci. Technol. A 20, 605–611 (2002)
https://doi.org/10.1116/1.1458949
In-situ measurement of magnetostrictive coefficient and elastic properties for thin films during growth
J. Vac. Sci. Technol. A 20, 612–615 (2002)
https://doi.org/10.1116/1.1458946
Preparation of high-pressure phase boron nitride films by physical vapor deposition
J. Vac. Sci. Technol. A 20, 622–624 (2002)
https://doi.org/10.1116/1.1458948
Diamondlike carbon deposition on plastic films by plasma source ion implantation
J. Vac. Sci. Technol. A 20, 625–633 (2002)
https://doi.org/10.1116/1.1458942
Aluminum oxide films deposited in low pressure conditions by reactive pulsed dc magnetron sputtering
J. Vac. Sci. Technol. A 20, 634–637 (2002)
https://doi.org/10.1116/1.1458943
Fluorine and boron co-doped diamond-like carbon films deposited by pulsed glow discharge plasma immersion ion processing
J. Vac. Sci. Technol. A 20, 638–642 (2002)
https://doi.org/10.1116/1.1460890
Influence of standing-wave electric field pattern on the laser damage resistance of thin films
J. Vac. Sci. Technol. A 20, 643–650 (2002)
https://doi.org/10.1116/1.1460892
Etching of organosilicate glass low-k dielectric films in halogen plasmas
J. Vac. Sci. Technol. A 20, 651–660 (2002)
https://doi.org/10.1116/1.1460891
Properties of combined TiN and Pt thin films applied to gas sensing
J. Vac. Sci. Technol. A 20, 667–673 (2002)
https://doi.org/10.1116/1.1460889
Alternating stress field and superhardness effect in TiN/NbN superlattice films
J. Vac. Sci. Technol. A 20, 674–677 (2002)
https://doi.org/10.1116/1.1460887
A supersonic molecular beam for gas–surface interaction studies with synchrotron radiation
A. Baraldi; L. Rumiz; M. Moretuzzo; M. Barnaba; G. Comelli; S. Lizzit; G. Paolucci; R. Rosei; F. Buatier de Mongeot; U. Valbusa
J. Vac. Sci. Technol. A 20, 683–687 (2002)
https://doi.org/10.1116/1.1460886
High precision measurements of arsenic and phosphorous implantation dose in silicon by secondary ion mass spectrometry
J. Vac. Sci. Technol. A 20, 688–692 (2002)
https://doi.org/10.1116/1.1463084
Ellipsometric method for real time control of thin film deposition on imperfect substrates
J. Vac. Sci. Technol. A 20, 702–706 (2002)
https://doi.org/10.1116/1.1464843
Transience of plasma surface modification as an adhesion promoter for polychlorotrifluorethylene
J. Vac. Sci. Technol. A 20, 707–713 (2002)
https://doi.org/10.1116/1.1464837
Ion assistance effects on electron beam deposited films
M. Alvisi; F. De Tomasi; A. Della Patria; M. Di Giulio; E. Masetti; M. R. Perrone; M. L. Protopapa; A. Tepore
J. Vac. Sci. Technol. A 20, 714–720 (2002)
https://doi.org/10.1116/1.1464836
Characterization of High Dose Mn, Fe, and Ni implantation into p-GaN
S. J. Pearton; M. E. Overberg; G. Thaler; C. R. Abernathy; N. Theodoropoulou; A. F. Hebard; S. N. G. Chu; R. G. Wilson; J. M. Zavada; A. Y. Polyakov; A. V. Osinsky; P. E. Norris; P. P. Chow; A. M. Wowchack; J. M. Van Hove; Y. D. Park
J. Vac. Sci. Technol. A 20, 721–724 (2002)
https://doi.org/10.1116/1.1465449
Amorphous boron coatings produced with vacuum arc deposition technology
C. C. Klepper; R. C. Hazelton; E. J. Yadlowsky; E. P. Carlson; M. D. Keitz; J. M. Williams; R. A. Zuhr; D. B. Poker
J. Vac. Sci. Technol. A 20, 725–732 (2002)
https://doi.org/10.1116/1.1464844
Interfacial mechanism studies of electroless plated Cu films on -Ta:N layers catalyzed by PIII
J. Vac. Sci. Technol. A 20, 733–740 (2002)
https://doi.org/10.1116/1.1465448
Preferential orientation of short chain vapor deposited polyaniline thin films on gold
J. Vac. Sci. Technol. A 20, 741–743 (2002)
https://doi.org/10.1116/1.1465450
Debris reduction for copper and diamond-like carbon thin films produced by magnetically guided pulsed laser deposition
J. Vac. Sci. Technol. A 20, 744–747 (2002)
https://doi.org/10.1116/1.1467664
Deep in situ dry-etch monitoring of III-V multilayer structures using laser reflectometry and reflectivity modeling
J. Vac. Sci. Technol. A 20, 748–753 (2002)
https://doi.org/10.1116/1.1468652
Stress changes in chemical vapor deposition tungsten silicide (polycide) film measured by x-ray diffraction
J. Vac. Sci. Technol. A 20, 754–761 (2002)
https://doi.org/10.1116/1.1467663
Electron dynamics in unoccupied molecular orbitals of two blue-light-emitting organic electroluminescent materials
J. Vac. Sci. Technol. A 20, 762–765 (2002)
https://doi.org/10.1116/1.1467666
High-density plasma-induced etch damage of wafer-bonded AlGaInP/mirror/Si light-emitting diodes
J. Vac. Sci. Technol. A 20, 766–771 (2002)
https://doi.org/10.1116/1.1467665
Structure and corrosion properties of PVD Cr–N coatings
J. Vac. Sci. Technol. A 20, 772–780 (2002)
https://doi.org/10.1116/1.1468651
In situ probing of surface hydrides on hydrogenated amorphous silicon using attenuated total reflection infrared spectroscopy
J. Vac. Sci. Technol. A 20, 781–789 (2002)
https://doi.org/10.1116/1.1469012
Morphology and electronic transport of polycrystalline silicon films deposited by at a substrate temperature of 200 °C
J. Vac. Sci. Technol. A 20, 790–796 (2002)
https://doi.org/10.1116/1.1469008
Electronic transport in perylenetetracarboxylic dianhydride: The role of In diffusion
J. Vac. Sci. Technol. A 20, 797–801 (2002)
https://doi.org/10.1116/1.1470513
Growth kinetics and initial stage growth during plasma-enhanced Ti atomic layer deposition
J. Vac. Sci. Technol. A 20, 802–808 (2002)
https://doi.org/10.1116/1.1469009
Deposition of ultrathin films on GaAs by e-beam evaporation
J. Vac. Sci. Technol. A 20, 809–813 (2002)
https://doi.org/10.1116/1.1469011
Gaseous mixture flow through a long tube at arbitrary Knudsen numbers
J. Vac. Sci. Technol. A 20, 814–822 (2002)
https://doi.org/10.1116/1.1469010
Microstructure and mechanical properties of Zr–Si–N films prepared by rf-reactive sputtering
J. Vac. Sci. Technol. A 20, 823–828 (2002)
https://doi.org/10.1116/1.1468657
Vacuum system design for the 3 GeV-proton synchrotron of JAERI-KEK joint project
J. Vac. Sci. Technol. A 20, 829–832 (2002)
https://doi.org/10.1116/1.1468656
Arc generation from sputtering plasma-dielectric inclusion interactions
J. Vac. Sci. Technol. A 20, 833–838 (2002)
https://doi.org/10.1116/1.1468655
On the mechanism of self-deceleration of the thin oxide film growth
J. Vac. Sci. Technol. A 20, 839–842 (2002)
https://doi.org/10.1116/1.1471353
The optical properties and applications of AlN thin films prepared by a helicon sputtering system
J. Vac. Sci. Technol. A 20, 843–847 (2002)
https://doi.org/10.1116/1.1470512
Simulation of hydrogen outgassing in ultrahigh vacuum chamber and fusion device by recombination limited model
J. Vac. Sci. Technol. A 20, 848–856 (2002)
https://doi.org/10.1116/1.1471354
Photon-stimulated desorption from an aluminum surface after water vapor exposure
J. Vac. Sci. Technol. A 20, 857–860 (2002)
https://doi.org/10.1116/1.1471355
Annealing effects of aluminum silicate films grown on Si(100)
M.-H. Cho; Y. S. Rho; H.-J. Choi; S. W. Nam; D.-H. Ko; J. H. Ku; H. C. Kang; D. Y. Noh; C. N. Whang; K. Jeong
J. Vac. Sci. Technol. A 20, 865–872 (2002)
https://doi.org/10.1116/1.1472422
Ion energy distributions at rf-biased wafer surfaces
J. R. Woodworth; I. C. Abraham; M. E. Riley; P. A. Miller; T. W. Hamilton; B. P. Aragon; R. J. Shul; C. G. Willison
J. Vac. Sci. Technol. A 20, 873–886 (2002)
https://doi.org/10.1116/1.1472421
Early stages of interface reactions between AlN and Ti thin films
J. Vac. Sci. Technol. A 20, 887–896 (2002)
https://doi.org/10.1116/1.1472417
Determination of atomic potential energy for Pd adatom diffusion across W (111) islands and surfaces
J. Vac. Sci. Technol. A 20, 897–899 (2002)
https://doi.org/10.1116/1.1472429
Uniformity in large area ZnO:Al films prepared by reactive midfrequency magnetron sputtering
J. Vac. Sci. Technol. A 20, 900–905 (2002)
https://doi.org/10.1116/1.1472420
Direct simulation of rarefied gas flows in rotating spiral channels
J. Vac. Sci. Technol. A 20, 906–910 (2002)
https://doi.org/10.1116/1.1472418
Interface between poly (9,9-dioctylfluorene) and alkali metals: cesium, potassium, sodium, and lithium
J. Vac. Sci. Technol. A 20, 911–918 (2002)
https://doi.org/10.1116/1.1472419
Langmuir probe measurements in an inductively coupled plasma: Electron energy distribution functions in polymerizing fluorocarbon gases used for selective etching of
Freddy Gaboriau; Marie-Claude Peignon; Gilles Cartry; Laetitia Rolland; David Eon; Christophe Cardinaud; Guy Turban
J. Vac. Sci. Technol. A 20, 919–927 (2002)
https://doi.org/10.1116/1.1474419
Microstructural characterization of radio frequency magnetron sputter-deposited phosphor thin films
J. Vac. Sci. Technol. A 20, 928–933 (2002)
https://doi.org/10.1116/1.1474418
Impact of residual by-products from tungsten film deposition on process integration due to nonuniformity of the tungsten film
Ardy Sidhwa; Chuck Spinner; Todd Gandy; Steve Melosky; William Brown; Simon Ang; Hameed Naseem; Richard Ulrich
J. Vac. Sci. Technol. A 20, 934–940 (2002)
https://doi.org/10.1116/1.1474417
Optical properties of bias-induced plasma for diamond film deposition
J. Vac. Sci. Technol. A 20, 941–944 (2002)
https://doi.org/10.1116/1.1474420
Investigation of the silicon ion density during molecular beam epitaxy growth
J. Vac. Sci. Technol. A 20, 945–949 (2002)
https://doi.org/10.1116/1.1474421
BRIEF REPORTS AND COMMENTS
Secondary electron emission for layered structures
J. Vac. Sci. Technol. A 20, 950–952 (2002)
https://doi.org/10.1116/1.1472415
RAPID COMMUNICATIONS
ERRATA
Papers from the Tenth Canadian Semiconductor Technology Conference
MEMS AND MICROFABRICATION
Dry etch process optimization for small-area a-Si:H vertical thin film transistor
J. Vac. Sci. Technol. A 20, 962–965 (2002)
https://doi.org/10.1116/1.1463073
Development of a microwave microelectromechanical systems switch
J. Vac. Sci. Technol. A 20, 966–970 (2002)
https://doi.org/10.1116/1.1467355
Heat transfer analysis and optimization of two-beam microelectromechanical thermal actuators
J. Vac. Sci. Technol. A 20, 971–974 (2002)
https://doi.org/10.1116/1.1468654
Dry etching of polydimethylsiloxane for microfluidic systems
J. Vac. Sci. Technol. A 20, 975–982 (2002)
https://doi.org/10.1116/1.1460896
Low temperature electron cyclotron resonance plasma etching for polysilicon gates
J. Vac. Sci. Technol. A 20, 983–985 (2002)
https://doi.org/10.1116/1.1472426
Sensitive in situ method to measure the rate of neutral free radical production by photodeionization of negative ion beams
Keiji Hayashi; Kenji Kameko; Seiji Kawakita; Yasunori Kawamura; Hiroshi Konno; Hideki Kojima; Takuo Kanayama
J. Vac. Sci. Technol. A 20, 991–994 (2002)
https://doi.org/10.1116/1.1460902
Ab initio molecular orbital characterization of dimethyl group-III azides as sources for photolytic production of free radical beams
J. Vac. Sci. Technol. A 20, 995–998 (2002)
https://doi.org/10.1116/1.1460895
CHARACTERIZATION
Quantitative voltage measurement of high-frequency internal integrated circuit signals by scanning probe microscopy
J. Vac. Sci. Technol. A 20, 999–1003 (2002)
https://doi.org/10.1116/1.1460901
Microstructural analysis of Ti/Al/Ti/Au ohmic contacts to n-AlGaN/GaN
J. Vac. Sci. Technol. A 20, 1004–1010 (2002)
https://doi.org/10.1116/1.1472428
Determination of structural parameters in heterojunction bipolar transistors by x-ray diffraction with (002) reflection
J. Vac. Sci. Technol. A 20, 1011–1014 (2002)
https://doi.org/10.1116/1.1467356
Atomic force microscopy study of the early stages of Sn phase separation on Si(111) surfaces
J. Vac. Sci. Technol. A 20, 1023–1026 (2002)
https://doi.org/10.1116/1.1463081
noise of amorphous indium oxide
J. Vac. Sci. Technol. A 20, 1027–1029 (2002)
https://doi.org/10.1116/1.1464841
TRANSISTORS AND CIRCUITS
Design of high speed Si/SiGe heterojunction complementary metal–oxide–semiconductor field effect transistors with reduced short-channel effects
J. Vac. Sci. Technol. A 20, 1030–1033 (2002)
https://doi.org/10.1116/1.1474422
Modeling of the static and dynamic behavior of hydrogenated amorphous silicon thin-film transistors
J. Vac. Sci. Technol. A 20, 1038–1042 (2002)
https://doi.org/10.1116/1.1472427
Extended radio frequency nonlinear model for power prediction of AlGaAs/InGaAs pseudomorphic high electron mobility transistors
J. Vac. Sci. Technol. A 20, 1048–1051 (2002)
https://doi.org/10.1116/1.1463080
PHOTONICS
Optoelectronic integration using aligned metal-to-semiconductor bonding
J. Vac. Sci. Technol. A 20, 1052–1056 (2002)
https://doi.org/10.1116/1.1464838
Ultrafast high-field carrier transport in a GaAs photoconductive switch
J. Vac. Sci. Technol. A 20, 1057–1060 (2002)
https://doi.org/10.1116/1.1468653
On the optimum design of the front-end PIN-heterojunction bipolar transistor optoelectronic integrated circuit photoreceiver
J. Vac. Sci. Technol. A 20, 1067–1071 (2002)
https://doi.org/10.1116/1.1472424
Patterning of wave guides in using ion beam etching and reactive ion beam etching
J. Vac. Sci. Technol. A 20, 1072–1075 (2002)
https://doi.org/10.1116/1.1472425
Control of dielectric cap induced band-gap shift in 1.55 μm laser structures
J. Vac. Sci. Technol. A 20, 1076–1078 (2002)
https://doi.org/10.1116/1.1463074
Submicron, high speed complementary metal–oxide semiconductor compatible metal–semiconductor–metal photodetector
J. Vac. Sci. Technol. A 20, 1079–1081 (2002)
https://doi.org/10.1116/1.1475981
SENSORS AND DISPLAYS
Sensitivity of x-ray photoconductors: Charge trapping and absorption-limited universal sensitivity curves
J. Vac. Sci. Technol. A 20, 1082–1086 (2002)
https://doi.org/10.1116/1.1460900
Amorphous silicon nitride deposited at 120 °C for organic light emitting display-thin film transistor arrays on plastic substrates
J. Vac. Sci. Technol. A 20, 1087–1090 (2002)
https://doi.org/10.1116/1.1472423
Fabrication of based phosphor films coupled with photodetectors for x-ray imaging applications
J. Vac. Sci. Technol. A 20, 1091–1094 (2002)
https://doi.org/10.1116/1.1463082
Active pixel sensor architectures in -SiH for medical imaging
J. Vac. Sci. Technol. A 20, 1095–1099 (2002)
https://doi.org/10.1116/1.1460897
High-temperature gas sensor using perovskite thin films on a suspended microheater
O. Grudin; R. Marinescu; L. M. Landsberger; M. Kahrizi; G. Frolov; J. D. N. Cheeke; S. Chehab; M. Post; J. Tunney; X. Du; D. Yang; D. Segall
J. Vac. Sci. Technol. A 20, 1100–1104 (2002)
https://doi.org/10.1116/1.1463072
Effect of interface trapping on the frequency response of a photodetector
J. Vac. Sci. Technol. A 20, 1105–1110 (2002)
https://doi.org/10.1116/1.1463076
EPITAXIAL STRUCTURES
Effect of the interface on the local structure of Ge–Si nanostructures
A. V. Kolobov; H. Oyanagi; K. Brunner; G. Abstreiter; Y. Maeda; A. A. Shklyaev; S. Yamasaki; M. Ichikawa; K. Tanaka
J. Vac. Sci. Technol. A 20, 1116–1119 (2002)
https://doi.org/10.1116/1.1460894
Growth and characterization of ultrahigh vacuum/chemical vapor deposition SiGe epitaxial layers on bulk single-crystal SiGe and Si substrates
J. Vac. Sci. Technol. A 20, 1120–1124 (2002)
https://doi.org/10.1116/1.1464840
Thickness-dependent renormalization of strain effects on self-organized InAs quantum dots grown on GaAs
J. Vac. Sci. Technol. A 20, 1125–1127 (2002)
https://doi.org/10.1116/1.1474416
Growth and coalescence evolution of InAs on GaAs by molecular beam epitaxy
J. Vac. Sci. Technol. A 20, 1128–1131 (2002)
https://doi.org/10.1116/1.1474415
Growth and characterization of InAs on (100) InP ultrathin single quantum wells using tertiarybutylarsine and tertiarybutylphosphine
J. Vac. Sci. Technol. A 20, 1132–1134 (2002)
https://doi.org/10.1116/1.1474412
THIN FILMS
Material properties of ion beam deposited oxides for the optoelectronic industry
Adrian J. Devasahayam; Ivo Agatic; Boris Druz; Hari Hegde; Isaac Zaritsky; Suhit R. Das; Marcel Boudreau; Tao Yin; Robert Mallard; Sylvain LaFramboise
J. Vac. Sci. Technol. A 20, 1135–1140 (2002)
https://doi.org/10.1116/1.1463077
Characterization of gadolinium and lanthanum oxide films on Si (100)
J. Vac. Sci. Technol. A 20, 1141–1144 (2002)
https://doi.org/10.1116/1.1463079
Characterization of thin films deposited using and on Si(100)
J. Vac. Sci. Technol. A 20, 1145–1148 (2002)
https://doi.org/10.1116/1.1467358
Characterization of low permittivity (low-k) polymeric dielectric films for low temperature device integration
J. Vac. Sci. Technol. A 20, 1149–1153 (2002)
https://doi.org/10.1116/1.1463083
Passivation of GaAs metal–insulator–semiconductor structures by and by evaporation of
J. Vac. Sci. Technol. A 20, 1154–1156 (2002)
https://doi.org/10.1116/1.1463078
Reactive pulsed laser deposition of high-k silicon dioxide and silicon oxynitride thin films for gate-dielectric applications
J. Vac. Sci. Technol. A 20, 1157–1161 (2002)
https://doi.org/10.1116/1.1467357
Anomalous effective magnetoconductivity in disordered bipolar semiconductors: Theory and experimental simulation
J. Vac. Sci. Technol. A 20, 1162–1166 (2002)
https://doi.org/10.1116/1.1460899