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Magnetic and structural properties of Fe, Ni, and Mn-implanted SiC

N. Theodoropoulou; A. F. Hebard; S. N. G. Chu; M. E. Overberg; C. R. Abernathy; S. J. Pearton; R. G. Wilson; J. M. Zavada; Y. D. Park

J. Vac. Sci. Technol. A 20, 579–582 (2002) https://doi.org/10.1116/1.1465447

Abstract

View articletitled, Magnetic and structural properties of Fe, Ni, and Mn-implanted SiC

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Initial growth and texture formation during reactive magnetron sputtering of TiN on Si(111)

T. Q. Li; S. Noda; Y. Tsuji; T. Ohsawa; H. Komiyama

J. Vac. Sci. Technol. A 20, 583–588 (2002) https://doi.org/10.1116/1.1458944

Abstract

View articletitled, Initial growth and texture formation during reactive magnetron sputtering of TiN on Si(111)

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Effect of interfacial interactions on the initial growth of Cu on clean ${SiO}_{2}$ and 3-mercaptopropyltrimethoxysilane-modified ${SiO}_{2}$ substrates

Minghui Hu; Suguru Noda; Yoshiko Tsuji; Tatsuya Okubo; Yukio Yamaguchi; Hiroshi Komiyama

J. Vac. Sci. Technol. A 20, 589–596 (2002) https://doi.org/10.1116/1.1458941

Abstract

View articletitled, Effect of interfacial interactions on the initial growth of Cu on clean <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SiO</mi><mrow><mn>2</mn></mrow></msub></math> and 3-mercaptopropyltrimethoxysilane-modified <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SiO</mi><mrow><mn>2</mn></mrow></msub></math> substrates

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Faraday cup detector array with electronic multiplexing for multichannel mass spectrometry

A. A. Scheidemann; R. B. Darling; F. J. Schumacher; A. Isakharov

J. Vac. Sci. Technol. A 20, 597–604 (2002) https://doi.org/10.1116/1.1458947

Abstract

View articletitled, Faraday cup detector array with electronic multiplexing for multichannel mass spectrometry

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Formation and oxidation properties of $({Ti}_{1−x} {Al}_{x}) N$ thin films prepared by dc reactive sputtering

Y. Matsui; M. Hiratani; Y. Nakamura; I. Asano; F. Yano

J. Vac. Sci. Technol. A 20, 605–611 (2002) https://doi.org/10.1116/1.1458949

Abstract

View articletitled, Formation and oxidation properties of <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">(</mi><msub xmlns=""><mi mathvariant="normal">Ti</mi><mrow><mtext>1−x</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Al</mi><mrow><mi>x</mi></mrow></msub><mi xmlns="">)</mi><mi mathvariant="normal" xmlns="">N</mi></math> thin films prepared by dc reactive sputtering

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In-situ measurement of magnetostrictive coefficient and elastic properties for thin films during growth

Xuesong Jin; C. O. Kim; Y. P. Lee; Y. Zhou

J. Vac. Sci. Technol. A 20, 612–615 (2002) https://doi.org/10.1116/1.1458946

Abstract

View articletitled, In-situ measurement of magnetostrictive coefficient and elastic properties for thin films during growth

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Characterization of gate oxynitrides by means of time of flight secondary ion mass spectrometry and x-ray photoelectron spectroscopy. Quantification of nitrogen

S. Ferrari; M. Perego; M. Fanciulli

J. Vac. Sci. Technol. A 20, 616–621 (2002) https://doi.org/10.1116/1.1458950

Abstract

View articletitled, Characterization of gate oxynitrides by means of time of flight secondary ion mass spectrometry and x-ray photoelectron spectroscopy. Quantification of nitrogen

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Preparation of high-pressure phase boron nitride films by physical vapor deposition

P. W. Zhu; Z. He; Y. N. Zhao; D. M. Li; H. W. Liu; G. T. Zou

J. Vac. Sci. Technol. A 20, 622–624 (2002) https://doi.org/10.1116/1.1458948

Abstract

View articletitled, Preparation of high-pressure phase boron nitride films by physical vapor deposition

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Diamondlike carbon deposition on plastic films by plasma source ion implantation

T. Tanaka; M. Yoshida; M. Shinohara; T. Takagi

J. Vac. Sci. Technol. A 20, 625–633 (2002) https://doi.org/10.1116/1.1458942

Abstract

View articletitled, Diamondlike carbon deposition on plastic films by plasma source ion implantation

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Aluminum oxide films deposited in low pressure conditions by reactive pulsed dc magnetron sputtering

T. Seino; T. Sato

J. Vac. Sci. Technol. A 20, 634–637 (2002) https://doi.org/10.1116/1.1458943

Abstract

View articletitled, Aluminum oxide films deposited in low pressure conditions by reactive pulsed dc magnetron sputtering

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Fluorine and boron co-doped diamond-like carbon films deposited by pulsed glow discharge plasma immersion ion processing

Xiao-Ming He; M. Hakovirta; A. M. Peters; B. Taylor; M. Nastasi

J. Vac. Sci. Technol. A 20, 638–642 (2002) https://doi.org/10.1116/1.1460890

Abstract

View articletitled, Fluorine and boron co-doped diamond-like carbon films deposited by pulsed glow discharge plasma immersion ion processing

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Influence of standing-wave electric field pattern on the laser damage resistance of ${HfO}_{2}$ thin films

M. L. Protopapa; M. Alvisi; F. De Tomasi; M. Di Giulio; M. R. Perrone; S. Scaglione

J. Vac. Sci. Technol. A 20, 643–650 (2002) https://doi.org/10.1116/1.1460892

Abstract

View articletitled, Influence of standing-wave electric field pattern on the laser damage resistance of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">HfO</mi><mrow><mn>2</mn></mrow></msub></math> thin films

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Etching of organosilicate glass low-k dielectric films in halogen plasmas

Steven A. Vitale; Herbert H. Sawin

J. Vac. Sci. Technol. A 20, 651–660 (2002) https://doi.org/10.1116/1.1460891

Abstract

View articletitled, Etching of organosilicate glass low-k dielectric films in halogen plasmas

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Influence of surface condition in Langmuir probe measurements

E. Stamate; K. Ohe

J. Vac. Sci. Technol. A 20, 661–666 (2002) https://doi.org/10.1116/1.1460893

Abstract

View articletitled, Influence of surface condition in Langmuir probe measurements

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Properties of combined TiN and Pt thin films applied to gas sensing

A. Elisabeth Åbom; Lars Hultman; Mats Eriksson; Ray D. Twesten

J. Vac. Sci. Technol. A 20, 667–673 (2002) https://doi.org/10.1116/1.1460889

Abstract

View articletitled, Properties of combined TiN and Pt thin films applied to gas sensing

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Alternating stress field and superhardness effect in TiN/NbN superlattice films

Li Geyang; Han Zenghu; Tian Jiawan; Xu Junhua; Gu Mingyuan

J. Vac. Sci. Technol. A 20, 674–677 (2002) https://doi.org/10.1116/1.1460887

Abstract

View articletitled, Alternating stress field and superhardness effect in TiN/NbN superlattice films

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Effect of ion bombardment and substrate orientation on structure and properties of titanium nitride films deposited by unbalanced magnetron sputtering

S. Guruvenket; G. Mohan Rao

J. Vac. Sci. Technol. A 20, 678–682 (2002) https://doi.org/10.1116/1.1460888

Abstract

View articletitled, Effect of ion bombardment and substrate orientation on structure and properties of titanium nitride films deposited by unbalanced magnetron sputtering

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A supersonic molecular beam for gas–surface interaction studies with synchrotron radiation

A. Baraldi; L. Rumiz; M. Moretuzzo; M. Barnaba; G. Comelli; S. Lizzit; G. Paolucci; R. Rosei; F. Buatier de Mongeot; U. Valbusa

J. Vac. Sci. Technol. A 20, 683–687 (2002) https://doi.org/10.1116/1.1460886

Abstract

View articletitled, A supersonic molecular beam for gas–surface interaction studies with synchrotron radiation

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High precision measurements of arsenic and phosphorous implantation dose in silicon by secondary ion mass spectrometry

P. H. Chi; D. S. Simons; J. M. McKinley; F. A. Stevie; C. N. Granger

J. Vac. Sci. Technol. A 20, 688–692 (2002) https://doi.org/10.1116/1.1463084

Abstract

View articletitled, High precision measurements of arsenic and phosphorous implantation dose in silicon by secondary ion mass spectrometry

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Oxygen plasma effects on optical properties of ZnSe films

Li Yan; John A. Woollam; Eva Franke

J. Vac. Sci. Technol. A 20, 693–701 (2002) https://doi.org/10.1116/1.1463085

Abstract

View articletitled, Oxygen plasma effects on optical properties of ZnSe films

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Ellipsometric method for real time control of thin film deposition on imperfect substrates

A. Hofrichter; T. Heitz; P. Bulkin; B. Drevillon

J. Vac. Sci. Technol. A 20, 702–706 (2002) https://doi.org/10.1116/1.1464843

Abstract

View articletitled, Ellipsometric method for real time control of thin film deposition on imperfect substrates

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Transience of plasma surface modification as an adhesion promoter for polychlorotrifluorethylene

S. Subrahmanyan; J. G. Dillard; B. J. Love; M. Romand; M. Charbonnier

J. Vac. Sci. Technol. A 20, 707–713 (2002) https://doi.org/10.1116/1.1464837

Abstract

View articletitled, Transience of plasma surface modification as an adhesion promoter for polychlorotrifluorethylene

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Ion assistance effects on electron beam deposited ${MgF}_{2}$ films

M. Alvisi; F. De Tomasi; A. Della Patria; M. Di Giulio; E. Masetti; M. R. Perrone; M. L. Protopapa; A. Tepore

J. Vac. Sci. Technol. A 20, 714–720 (2002) https://doi.org/10.1116/1.1464836

Abstract

View articletitled, Ion assistance effects on electron beam deposited <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">MgF</mi><mrow><mn>2</mn></mrow></msub></math> films

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Characterization of High Dose Mn, Fe, and Ni implantation into p-GaN

S. J. Pearton; M. E. Overberg; G. Thaler; C. R. Abernathy; N. Theodoropoulou; A. F. Hebard; S. N. G. Chu; R. G. Wilson; J. M. Zavada; A. Y. Polyakov; A. V. Osinsky; P. E. Norris; P. P. Chow; A. M. Wowchack; J. M. Van Hove; Y. D. Park

J. Vac. Sci. Technol. A 20, 721–724 (2002) https://doi.org/10.1116/1.1465449

Abstract

View articletitled, Characterization of High Dose Mn, Fe, and Ni implantation into p-GaN

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Amorphous boron coatings produced with vacuum arc deposition technology

C. C. Klepper; R. C. Hazelton; E. J. Yadlowsky; E. P. Carlson; M. D. Keitz; J. M. Williams; R. A. Zuhr; D. B. Poker

J. Vac. Sci. Technol. A 20, 725–732 (2002) https://doi.org/10.1116/1.1464844

Abstract

View articletitled, Amorphous boron coatings produced with vacuum arc deposition technology

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Interfacial mechanism studies of electroless plated Cu films on $a$ -Ta:N layers catalyzed by PIII

Jian-Hong Lin; Tzu-Li Lee; Wei-Jen Hsieh; Chien-Cheng Lin; Chwung-Shan Kou; Han C. Shih

J. Vac. Sci. Technol. A 20, 733–740 (2002) https://doi.org/10.1116/1.1465448

Abstract

View articletitled, Interfacial mechanism studies of electroless plated Cu films on <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">a</mi></math>-Ta:N layers catalyzed by PIII

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Preferential orientation of short chain vapor deposited polyaniline thin films on gold

B. Xu; Jaewu Choi; P. A. Dowben

J. Vac. Sci. Technol. A 20, 741–743 (2002) https://doi.org/10.1116/1.1465450

Abstract

View articletitled, Preferential orientation of short chain vapor deposited polyaniline thin films on gold

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Debris reduction for copper and diamond-like carbon thin films produced by magnetically guided pulsed laser deposition

Y. Y. Tsui; H. Minami; D. Vick; R. Fedosejevs

J. Vac. Sci. Technol. A 20, 744–747 (2002) https://doi.org/10.1116/1.1467664

Abstract

View articletitled, Debris reduction for copper and diamond-like carbon thin films produced by magnetically guided pulsed laser deposition

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Deep in situ dry-etch monitoring of III-V multilayer structures using laser reflectometry and reflectivity modeling

H. Moussa; R. Daneau; C. Mériadec; L. Manin; I. Sagnes; R. Raj

J. Vac. Sci. Technol. A 20, 748–753 (2002) https://doi.org/10.1116/1.1468652

Abstract

View articletitled, Deep in situ dry-etch monitoring of III-V multilayer structures using laser reflectometry and reflectivity modeling

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Stress changes in chemical vapor deposition tungsten silicide (polycide) film measured by x-ray diffraction

Joshua Pelleg; E. Elish

J. Vac. Sci. Technol. A 20, 754–761 (2002) https://doi.org/10.1116/1.1467663

Abstract

View articletitled, Stress changes in chemical vapor deposition tungsten silicide (polycide) film measured by x-ray diffraction

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Electron dynamics in unoccupied molecular orbitals of two blue-light-emitting organic electroluminescent materials

H. S. Karlsson; K. Read; R. Haight

J. Vac. Sci. Technol. A 20, 762–765 (2002) https://doi.org/10.1116/1.1467666

Abstract

View articletitled, Electron dynamics in unoccupied molecular orbitals of two blue-light-emitting organic electroluminescent materials

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High-density plasma-induced etch damage of wafer-bonded AlGaInP/mirror/Si light-emitting diodes

D. S. Wuu; R. H. Horng; S. H. Huang; C. R. Chung

J. Vac. Sci. Technol. A 20, 766–771 (2002) https://doi.org/10.1116/1.1467665

Abstract

View articletitled, High-density plasma-induced etch damage of wafer-bonded AlGaInP/mirror/Si light-emitting diodes

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Structure and corrosion properties of PVD Cr–N coatings

C. Liu; Q. Bi; H. Ziegele; A. Leyland; A. Matthews

J. Vac. Sci. Technol. A 20, 772–780 (2002) https://doi.org/10.1116/1.1468651

Abstract

View articletitled, Structure and corrosion properties of PVD Cr–N coatings

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In situ probing of surface hydrides on hydrogenated amorphous silicon using attenuated total reflection infrared spectroscopy

W. M. M. Kessels; Denise C. Marra; M. C. M. van de Sanden; Eray S. Aydil

J. Vac. Sci. Technol. A 20, 781–789 (2002) https://doi.org/10.1116/1.1469012

Abstract

View articletitled, In situ probing of surface hydrides on hydrogenated amorphous silicon using attenuated total reflection infrared spectroscopy

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Morphology and electronic transport of polycrystalline silicon films deposited by ${SiF}_{4} / H_{2}$ at a substrate temperature of 200 °C

Sukti Hazra; Sumita Mukhopadhyay; Swati Ray

J. Vac. Sci. Technol. A 20, 790–796 (2002) https://doi.org/10.1116/1.1469008

Abstract

View articletitled, Morphology and electronic transport of polycrystalline silicon films deposited by <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SiF</mi><mrow><mn>4</mn></mrow></msub><mi xmlns="">/</mi><msub xmlns=""><mi mathvariant="normal">H</mi><mrow><mn>2</mn></mrow></msub></math> at a substrate temperature of 200 °C

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Electronic transport in perylenetetracarboxylic dianhydride: The role of In diffusion

Robert Hudej; Gvido Bratina

J. Vac. Sci. Technol. A 20, 797–801 (2002) https://doi.org/10.1116/1.1470513

Abstract

View articletitled, Electronic transport in perylenetetracarboxylic dianhydride: The role of In diffusion

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Growth kinetics and initial stage growth during plasma-enhanced Ti atomic layer deposition

H. Kim; S. M. Rossnagel

J. Vac. Sci. Technol. A 20, 802–808 (2002) https://doi.org/10.1116/1.1469009

Abstract

View articletitled, Growth kinetics and initial stage growth during plasma-enhanced Ti atomic layer deposition

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Deposition of ${Ga}_{2} O_{3−x}$ ultrathin films on GaAs by e-beam evaporation

N. C. Oldham; C. J. Hill; C. M. Garland; T. C. McGill

J. Vac. Sci. Technol. A 20, 809–813 (2002) https://doi.org/10.1116/1.1469011

Abstract

View articletitled, Deposition of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Ga</mi><mrow><mn>2</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mtext>3−x</mtext></mrow></msub></math> ultrathin films on GaAs by e-beam evaporation

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Gaseous mixture flow through a long tube at arbitrary Knudsen numbers

Felix Sharipov; Denize Kalempa

J. Vac. Sci. Technol. A 20, 814–822 (2002) https://doi.org/10.1116/1.1469010

Abstract

View articletitled, Gaseous mixture flow through a long tube at arbitrary Knudsen numbers

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Microstructure and mechanical properties of Zr–Si–N films prepared by rf-reactive sputtering

M. Nose; W. A. Chiou; M. Zhou; T. Mae; M. Meshii

J. Vac. Sci. Technol. A 20, 823–828 (2002) https://doi.org/10.1116/1.1468657

Abstract

View articletitled, Microstructure and mechanical properties of Zr–Si–N films prepared by rf-reactive sputtering

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Vacuum system design for the 3 GeV-proton synchrotron of JAERI-KEK joint project

Michikazu Kinsho; Daiji Nishizawa; Yoshio Saito; Hiromitsu Suzuki; Hideaki Yokomizo

J. Vac. Sci. Technol. A 20, 829–832 (2002) https://doi.org/10.1116/1.1468656

Abstract

View articletitled, Vacuum system design for the 3 GeV-proton synchrotron of JAERI-KEK joint project

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Arc generation from sputtering plasma-dielectric inclusion interactions

C. E. Wickersham, Jr.; J. E. Poole; J. S. Fan

J. Vac. Sci. Technol. A 20, 833–838 (2002) https://doi.org/10.1116/1.1468655

Abstract

View articletitled, Arc generation from sputtering plasma-dielectric inclusion interactions

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On the mechanism of self-deceleration of the thin oxide film growth

D. G. Mukhambetov; O. V. Chalaya

J. Vac. Sci. Technol. A 20, 839–842 (2002) https://doi.org/10.1116/1.1471353

Abstract

View articletitled, On the mechanism of self-deceleration of the thin oxide film growth

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The optical properties and applications of AlN thin films prepared by a helicon sputtering system

W. Y. Chiu; C. H. Wu; H. L. Kao; Erik S. Jeng; Jyh Shin Chen; C. C. Jaing

J. Vac. Sci. Technol. A 20, 843–847 (2002) https://doi.org/10.1116/1.1470512

Abstract

View articletitled, The optical properties and applications of AlN thin films prepared by a helicon sputtering system

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Simulation of hydrogen outgassing in ultrahigh vacuum chamber and fusion device by recombination limited model

K. Akaishi; M. Nakasuga; Y. Funato

J. Vac. Sci. Technol. A 20, 848–856 (2002) https://doi.org/10.1116/1.1471354

Abstract

View articletitled, Simulation of hydrogen outgassing in ultrahigh vacuum chamber and fusion device by recombination limited model

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Photon-stimulated desorption from an aluminum surface after water vapor exposure

J. R. Chen; K. Y. Yang; J. Y. Yang; G. Y. Hsiung

J. Vac. Sci. Technol. A 20, 857–860 (2002) https://doi.org/10.1116/1.1471355

Abstract

View articletitled, Photon-stimulated desorption from an aluminum surface after water vapor exposure

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Dependence of electrical and optical properties of amorphous SiC:H thin films grown by rf plasma enhanced chemical vapor deposition on annealing temperature

M. G. Park; W. S. Choi; B. Hong; Y. T. Kim; D. H. Yoon

J. Vac. Sci. Technol. A 20, 861–864 (2002) https://doi.org/10.1116/1.1472416

Abstract

View articletitled, Dependence of electrical and optical properties of amorphous SiC:H thin films grown by rf plasma enhanced chemical vapor deposition on annealing temperature

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Annealing effects of aluminum silicate films grown on Si(100)

M.-H. Cho; Y. S. Rho; H.-J. Choi; S. W. Nam; D.-H. Ko; J. H. Ku; H. C. Kang; D. Y. Noh; C. N. Whang; K. Jeong

J. Vac. Sci. Technol. A 20, 865–872 (2002) https://doi.org/10.1116/1.1472422

Abstract

View articletitled, Annealing effects of aluminum silicate films grown on Si(100)

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Ion energy distributions at rf-biased wafer surfaces

J. R. Woodworth; I. C. Abraham; M. E. Riley; P. A. Miller; T. W. Hamilton; B. P. Aragon; R. J. Shul; C. G. Willison

J. Vac. Sci. Technol. A 20, 873–886 (2002) https://doi.org/10.1116/1.1472421

Abstract

View articletitled, Ion energy distributions at rf-biased wafer surfaces

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Early stages of interface reactions between AlN and Ti thin films

M. Pinkas; N. Frage; N. Froumin; J. Pelleg; M. P. Dariel

J. Vac. Sci. Technol. A 20, 887–896 (2002) https://doi.org/10.1116/1.1472417

Abstract

View articletitled, Early stages of interface reactions between AlN and Ti thin films

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Determination of atomic potential energy for Pd adatom diffusion across W (111) islands and surfaces

Tsu-Yi Fu; Lung-Chieh Cheng; Tien T. Tsong

J. Vac. Sci. Technol. A 20, 897–899 (2002) https://doi.org/10.1116/1.1472429

Abstract

View articletitled, Determination of atomic potential energy for Pd adatom diffusion across W (111) islands and surfaces

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Uniformity in large area ZnO:Al films prepared by reactive midfrequency magnetron sputtering

R. J. Hong; X. Jiang; V. Sittinger; B. Szyszka; T. Höing; G. Bräuer; G. Heide; G. H. Frischat

J. Vac. Sci. Technol. A 20, 900–905 (2002) https://doi.org/10.1116/1.1472420

Abstract

View articletitled, Uniformity in large area ZnO:Al films prepared by reactive midfrequency magnetron sputtering

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Direct simulation of rarefied gas flows in rotating spiral channels

Joong-Sik Heo; Young-Kyu Hwang

J. Vac. Sci. Technol. A 20, 906–910 (2002) https://doi.org/10.1116/1.1472418

Abstract

View articletitled, Direct simulation of rarefied gas flows in rotating spiral channels

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Interface between poly (9,9-dioctylfluorene) and alkali metals: cesium, potassium, sodium, and lithium

M. K. Fung; S. L. Lai; S. N. Bao; C. S. Lee; S. T. Lee; W. W. Wu; M. Inbasekaran; J. J. O’Brien

J. Vac. Sci. Technol. A 20, 911–918 (2002) https://doi.org/10.1116/1.1472419

Abstract

View articletitled, Interface between poly (9,9-dioctylfluorene) and alkali metals: cesium, potassium, sodium, and lithium

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Langmuir probe measurements in an inductively coupled plasma: Electron energy distribution functions in polymerizing fluorocarbon gases used for selective etching of ${SiO}_{2}$

Freddy Gaboriau; Marie-Claude Peignon; Gilles Cartry; Laetitia Rolland; David Eon; Christophe Cardinaud; Guy Turban

J. Vac. Sci. Technol. A 20, 919–927 (2002) https://doi.org/10.1116/1.1474419

Abstract

View articletitled, Langmuir probe measurements in an inductively coupled plasma: Electron energy distribution functions in polymerizing fluorocarbon gases used for selective etching of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SiO</mi><mrow><mn>2</mn></mrow></msub></math>

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Microstructural characterization of radio frequency magnetron sputter-deposited ${Ga}_{2} O_{3} : Mn$ phosphor thin films

Joo Han Kim; Paul H. Holloway

J. Vac. Sci. Technol. A 20, 928–933 (2002) https://doi.org/10.1116/1.1474418

Abstract

View articletitled, Microstructural characterization of radio frequency magnetron sputter-deposited <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Ga</mi><mrow><mn>2</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mn>3</mn></mrow></msub><mi xmlns="">:</mi><mi mathvariant="normal" xmlns="">Mn</mi></math> phosphor thin films

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Impact of residual by-products from tungsten film deposition on process integration due to nonuniformity of the tungsten film

Ardy Sidhwa; Chuck Spinner; Todd Gandy; Steve Melosky; William Brown; Simon Ang; Hameed Naseem; Richard Ulrich

J. Vac. Sci. Technol. A 20, 934–940 (2002) https://doi.org/10.1116/1.1474417

Abstract

View articletitled, Impact of residual by-products from tungsten film deposition on process integration due to nonuniformity of the tungsten film

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Optical properties of bias-induced ${CH}_{4} {–H}_{2}$ plasma for diamond film deposition

X. D. Zhu; R. J. Zhan; H. Y. Zhou; X. H. Wen; D. Li

J. Vac. Sci. Technol. A 20, 941–944 (2002) https://doi.org/10.1116/1.1474420

Abstract

View articletitled, Optical properties of bias-induced <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">CH</mi><mrow><mi mathvariant="normal">4</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">–H</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math> plasma for diamond film deposition

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Investigation of the silicon ion density during molecular beam epitaxy growth

G. Eifler; E. Kasper; Kh. Ashurov; S. Morozov

J. Vac. Sci. Technol. A 20, 945–949 (2002) https://doi.org/10.1116/1.1474421

Abstract

View articletitled, Investigation of the silicon ion density during molecular beam epitaxy growth

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BRIEF REPORTS AND COMMENTS

Secondary electron emission for layered structures

SeGi Yu; Whikun Yi; Taewon Jeong; Jeonghee Lee; Jungna Heo; Chang Soo Lee; D. Jeon; J. M. Kim

J. Vac. Sci. Technol. A 20, 950–952 (2002) https://doi.org/10.1116/1.1472415

Abstract

View articletitled, Secondary electron emission for layered structures

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RAPID COMMUNICATIONS

Effects of initial layers on surface roughness and crystallinity of microcrystalline silicon thin films formed by remote electron cyclotron resonance silane plasma

Kazuya Murata; Daisuke Kikukawa; Masaru Hori; Toshio Goto; Masafumi Ito

J. Vac. Sci. Technol. A 20, 953–956 (2002) https://doi.org/10.1116/1.1458945

Abstract

View articletitled, Effects of initial layers on surface roughness and crystallinity of microcrystalline silicon thin films formed by remote electron cyclotron resonance silane plasma

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ERRATA

Erratum: “Accommodation coefficient of tangential momentum on atomically clean and contaminated surfaces” [J. Vac. Sci. Technol. A 19, 2499 (2001)]

Oleg V. Sazhin; Sergei F. Borisov; Felix Sharipov

J. Vac. Sci. Technol. A 20, 957 (2002) https://doi.org/10.1116/1.1459081

View articletitled, Erratum: “Accommodation coefficient of tangential momentum on atomically clean and contaminated surfaces” [J. Vac. Sci. Technol. A 19, 2499 (2001)]

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Papers from the Tenth Canadian Semiconductor Technology Conference

MEMS AND MICROFABRICATION

Dry etch process optimization for small-area a-Si:H vertical thin film transistor

I. Chan; A. Nathan

J. Vac. Sci. Technol. A 20, 962–965 (2002) https://doi.org/10.1116/1.1463073

Abstract

View articletitled, Dry etch process optimization for small-area a-Si:H vertical thin film transistor

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Development of a microwave microelectromechanical systems switch

S. N. Qiu; C. X. Qiu; I. Shih; M. Yu; G. Brassard; G. Séguin

J. Vac. Sci. Technol. A 20, 966–970 (2002) https://doi.org/10.1116/1.1467355

Abstract

View articletitled, Development of a microwave microelectromechanical systems switch

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Heat transfer analysis and optimization of two-beam microelectromechanical thermal actuators

Ryan Hickey; Marek Kujath; Ted Hubbard

J. Vac. Sci. Technol. A 20, 971–974 (2002) https://doi.org/10.1116/1.1468654

Abstract

View articletitled, Heat transfer analysis and optimization of two-beam microelectromechanical thermal actuators

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Dry etching of polydimethylsiloxane for microfluidic systems

J. Garra; T. Long; J. Currie; T. Schneider; R. White; M. Paranjape

J. Vac. Sci. Technol. A 20, 975–982 (2002) https://doi.org/10.1116/1.1460896

Abstract

View articletitled, Dry etching of polydimethylsiloxane for microfluidic systems

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Low temperature ${SF}_{6} / O_{2}$ electron cyclotron resonance plasma etching for polysilicon gates

I. Hasan; C. A. Pawlowicz; L. P. Berndt; N. G. Tarr

J. Vac. Sci. Technol. A 20, 983–985 (2002) https://doi.org/10.1116/1.1472426

Abstract

View articletitled, Low temperature <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SF</mi><mrow><mn>6</mn></mrow></msub><mi xmlns="">/</mi><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mn>2</mn></mrow></msub></math> electron cyclotron resonance plasma etching for polysilicon gates

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Crystallization transformations in vacuum-deposited amorphous aluminum fluoride self-developing thin-film resists induced by electron-beam irradiation

G. S. Chen; P. Y. Lee; C. B. Boothroyd; C. J. Humphreys

J. Vac. Sci. Technol. A 20, 986–990 (2002) https://doi.org/10.1116/1.1464842

Abstract

View articletitled, Crystallization transformations in vacuum-deposited amorphous aluminum fluoride self-developing thin-film resists induced by electron-beam irradiation

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Sensitive in situ method to measure the rate of neutral free radical production by photodeionization of negative ion beams

Keiji Hayashi; Kenji Kameko; Seiji Kawakita; Yasunori Kawamura; Hiroshi Konno; Hideki Kojima; Takuo Kanayama

J. Vac. Sci. Technol. A 20, 991–994 (2002) https://doi.org/10.1116/1.1460902

Abstract

View articletitled, Sensitive in situ method to measure the rate of neutral free radical production by photodeionization of negative ion beams

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Ab initio molecular orbital characterization of dimethyl group-III azides as sources for photolytic production of free radical beams

Keiji Hayashi; Takuo Kanayama; Toyohiro Shimizu; Yasunori Kawamura; Kenji Kameko; Seiji Kawakita

J. Vac. Sci. Technol. A 20, 995–998 (2002) https://doi.org/10.1116/1.1460895

Abstract

View articletitled, Ab initio molecular orbital characterization of dimethyl group-III azides as sources for photolytic production of free radical beams

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CHARACTERIZATION

Quantitative voltage measurement of high-frequency internal integrated circuit signals by scanning probe microscopy

Z. Weng; C. J. Falkingham; G. E. Bridges; D. J. Thomson

J. Vac. Sci. Technol. A 20, 999–1003 (2002) https://doi.org/10.1116/1.1460901

Abstract

View articletitled, Quantitative voltage measurement of high-frequency internal integrated circuit signals by scanning probe microscopy

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Microstructural analysis of Ti/Al/Ti/Au ohmic contacts to n-AlGaN/GaN

J. Chen; D. G. Ivey; J. Bardwell; Y. Liu; H. Tang; J. B. Webb

J. Vac. Sci. Technol. A 20, 1004–1010 (2002) https://doi.org/10.1116/1.1472428

Abstract

View articletitled, Microstructural analysis of Ti/Al/Ti/Au ohmic contacts to n-AlGaN/GaN

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Determination of structural parameters in heterojunction bipolar transistors by x-ray diffraction with (002) reflection

A. Shen; E. M. Griswold; G. Hillier; L. Dang; A. Kuhl; R. Arès; D. Clark; I. D. Calder

J. Vac. Sci. Technol. A 20, 1011–1014 (2002) https://doi.org/10.1116/1.1467356

Abstract

View articletitled, Determination of structural parameters in heterojunction bipolar transistors by x-ray diffraction with (002) reflection

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Galvanic corrosion behavior of GaAs in acid solutions

G. S. Weng; J. L. Luo; D. G. Ivey

J. Vac. Sci. Technol. A 20, 1015–1022 (2002) https://doi.org/10.1116/1.1460898

Abstract

View articletitled, Galvanic corrosion behavior of GaAs in acid solutions

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Atomic force microscopy study of the early stages of Sn phase separation on Si(111) surfaces

Qin Hu; Martin Zinke-Allmang

J. Vac. Sci. Technol. A 20, 1023–1026 (2002) https://doi.org/10.1116/1.1463081

Abstract

View articletitled, Atomic force microscopy study of the early stages of Sn phase separation on Si(111) surfaces

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$1/f$ noise of amorphous indium oxide

Robert E. Johanson; S. O. Kasap

J. Vac. Sci. Technol. A 20, 1027–1029 (2002) https://doi.org/10.1116/1.1464841

Abstract

View articletitled, <math xmlns="http://www.w3.org/1998/Math/MathML"><mtext xmlns="">1/f</mtext></math> noise of amorphous indium oxide

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TRANSISTORS AND CIRCUITS

Design of high speed Si/SiGe heterojunction complementary metal–oxide–semiconductor field effect transistors with reduced short-channel effects

P. W. Li; W. M. Liao

J. Vac. Sci. Technol. A 20, 1030–1033 (2002) https://doi.org/10.1116/1.1474422

Abstract

View articletitled, Design of high speed Si/SiGe heterojunction complementary metal–oxide–semiconductor field effect transistors with reduced short-channel effects

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2.4 GHz voltage control oscillator and power amplifier monolithic microwave integrated circuits based on 0.25 μm complementary metal–oxide–semiconductor technologies

Chao-Chih Hsiao; Chin-Wei Kuo; Chien-Chih Ho; Yi-Jen Chan

J. Vac. Sci. Technol. A 20, 1034–1037 (2002) https://doi.org/10.1116/1.1474414

Abstract

View articletitled, 2.4 GHz voltage control oscillator and power amplifier monolithic microwave integrated circuits based on 0.25 μm complementary metal–oxide–semiconductor technologies

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Modeling of the static and dynamic behavior of hydrogenated amorphous silicon thin-film transistors

P. Servati; A. Nathan

J. Vac. Sci. Technol. A 20, 1038–1042 (2002) https://doi.org/10.1116/1.1472427

Abstract

View articletitled, Modeling of the static and dynamic behavior of hydrogenated amorphous silicon thin-film transistors

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Design of multiplexer in amorphous silicon technology

N. Mohan; K. S. Karim; A. Nathan

J. Vac. Sci. Technol. A 20, 1043–1047 (2002) https://doi.org/10.1116/1.1474413

Abstract

View articletitled, Design of multiplexer in amorphous silicon technology

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Extended radio frequency nonlinear model for power prediction of AlGaAs/InGaAs pseudomorphic high electron mobility transistors

Cheng-Kuo Lin; Yi-Jen Chan

J. Vac. Sci. Technol. A 20, 1048–1051 (2002) https://doi.org/10.1116/1.1463080

Abstract

View articletitled, Extended radio frequency nonlinear model for power prediction of AlGaAs/InGaAs pseudomorphic high electron mobility transistors

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PHOTONICS

Optoelectronic integration using aligned metal-to-semiconductor bonding

Wojciech P. Giziewicz; Clifton G. Fonstad, Jr.

J. Vac. Sci. Technol. A 20, 1052–1056 (2002) https://doi.org/10.1116/1.1464838

Abstract

View articletitled, Optoelectronic integration using aligned metal-to-semiconductor bonding

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Ultrafast high-field carrier transport in a GaAs photoconductive switch

M. D. Cummings; J. F. Holzman; A. Y. Elezzabi

J. Vac. Sci. Technol. A 20, 1057–1060 (2002) https://doi.org/10.1116/1.1468653

Abstract

View articletitled, Ultrafast high-field carrier transport in a GaAs photoconductive switch

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Reliability and low-frequency noise measurements of InGaAsP multiple quantum well buried-heterostructure lasers

Gregory Letal; Saulius Smetona; Robert Mallard; Jonas Matukas; Vilius Palenskis; Sandra Pralgauskaite

J. Vac. Sci. Technol. A 20, 1061–1066 (2002) https://doi.org/10.1116/1.1464839

Abstract

View articletitled, Reliability and low-frequency noise measurements of InGaAsP multiple quantum well buried-heterostructure lasers

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On the optimum design of the front-end PIN-heterojunction bipolar transistor optoelectronic integrated circuit photoreceiver

N. R. Das; M. J. Deen

J. Vac. Sci. Technol. A 20, 1067–1071 (2002) https://doi.org/10.1116/1.1472424

Abstract

View articletitled, On the optimum design of the front-end PIN-heterojunction bipolar transistor optoelectronic integrated circuit photoreceiver

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Patterning of wave guides in ${LiNbO}_{3}$ using ion beam etching and reactive ion beam etching

D. S. Hines; K. E. Williams

J. Vac. Sci. Technol. A 20, 1072–1075 (2002) https://doi.org/10.1116/1.1472425

Abstract

View articletitled, Patterning of wave guides in <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">LiNbO</mi><mrow><mn>3</mn></mrow></msub></math> using ion beam etching and reactive ion beam etching

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Control of dielectric cap induced band-gap shift in 1.55 μm laser structures

J. Wojcik; B. J. Robinson; D. A. Thompson; P. Mascher

J. Vac. Sci. Technol. A 20, 1076–1078 (2002) https://doi.org/10.1116/1.1463074

Abstract

View articletitled, Control of dielectric cap induced band-gap shift in 1.55 μm laser structures

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Submicron, high speed complementary metal–oxide semiconductor compatible metal–semiconductor–metal photodetector

A. M. DeVries; N. G. Tarr; P. Cheben; P. D. Grant; S. Janz; D.-X. Xu

J. Vac. Sci. Technol. A 20, 1079–1081 (2002) https://doi.org/10.1116/1.1475981

Abstract

View articletitled, Submicron, high speed complementary metal–oxide semiconductor compatible metal–semiconductor–metal photodetector

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SENSORS AND DISPLAYS

Sensitivity of x-ray photoconductors: Charge trapping and absorption-limited universal sensitivity curves

M. Zahangir Kabir; S. O. Kasap

J. Vac. Sci. Technol. A 20, 1082–1086 (2002) https://doi.org/10.1116/1.1460900

Abstract

View articletitled, Sensitivity of x-ray photoconductors: Charge trapping and absorption-limited universal sensitivity curves

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Amorphous silicon nitride deposited at 120 °C for organic light emitting display-thin film transistor arrays on plastic substrates

Denis Stryahilev; Andrei Sazonov; Arokia Nathan

J. Vac. Sci. Technol. A 20, 1087–1090 (2002) https://doi.org/10.1116/1.1472423

Abstract

View articletitled, Amorphous silicon nitride deposited at 120 °C for organic light emitting display-thin film transistor arrays on plastic substrates

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Fabrication of ${Gd}_{2} O_{2} S:Tb$ based phosphor films coupled with photodetectors for x-ray imaging applications

S. Tao; Z. H. Gu; A. Nathan

J. Vac. Sci. Technol. A 20, 1091–1094 (2002) https://doi.org/10.1116/1.1463082

Abstract

View articletitled, Fabrication of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Gd</mi><mrow><mn>2</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mn>2</mn></mrow></msub><mi mathvariant="normal" xmlns="">S:Tb</mi></math> based phosphor films coupled with photodetectors for x-ray imaging applications

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Active pixel sensor architectures in $a$ -SiH for medical imaging

Karim S. Karim; Arokia Nathan; John A. Rowlands

J. Vac. Sci. Technol. A 20, 1095–1099 (2002) https://doi.org/10.1116/1.1460897

Abstract

View articletitled, Active pixel sensor architectures in <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">a</mi></math>-SiH for medical imaging

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High-temperature gas sensor using perovskite thin films on a suspended microheater

O. Grudin; R. Marinescu; L. M. Landsberger; M. Kahrizi; G. Frolov; J. D. N. Cheeke; S. Chehab; M. Post; J. Tunney; X. Du; D. Yang; D. Segall

J. Vac. Sci. Technol. A 20, 1100–1104 (2002) https://doi.org/10.1116/1.1463072

Abstract

View articletitled, High-temperature gas sensor using perovskite thin films on a suspended microheater

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Effect of interface trapping on the frequency response of a photodetector

N. R. Das; M. Jamal Deen

J. Vac. Sci. Technol. A 20, 1105–1110 (2002) https://doi.org/10.1116/1.1463076

Abstract

View articletitled, Effect of interface trapping on the frequency response of a photodetector

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Capacitance accelerometer with metal microbeam

I. Chaikovsky; M. Reznik; I. Karnovsky

J. Vac. Sci. Technol. A 20, 1111–1115 (2002) https://doi.org/10.1116/1.1463075

Abstract

View articletitled, Capacitance accelerometer with metal microbeam

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EPITAXIAL STRUCTURES

Effect of the interface on the local structure of Ge–Si nanostructures

A. V. Kolobov; H. Oyanagi; K. Brunner; G. Abstreiter; Y. Maeda; A. A. Shklyaev; S. Yamasaki; M. Ichikawa; K. Tanaka

J. Vac. Sci. Technol. A 20, 1116–1119 (2002) https://doi.org/10.1116/1.1460894

Abstract

View articletitled, Effect of the interface on the local structure of Ge–Si nanostructures

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Growth and characterization of ultrahigh vacuum/chemical vapor deposition SiGe epitaxial layers on bulk single-crystal SiGe and Si substrates

S. R. Sheng; M. Dion; S. P. McAlister; N. L. Rowell

J. Vac. Sci. Technol. A 20, 1120–1124 (2002) https://doi.org/10.1116/1.1464840

Abstract

View articletitled, Growth and characterization of ultrahigh vacuum/chemical vapor deposition SiGe epitaxial layers on bulk single-crystal SiGe and Si substrates

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Thickness-dependent renormalization of strain effects on self-organized InAs quantum dots grown on GaAs

Ray-Ming Lin; Tzer-En Nee; Mei-Ching Tsai; Yuan-Hao Chang; Ping-Lin Fan; Rong-Seng Chang

J. Vac. Sci. Technol. A 20, 1125–1127 (2002) https://doi.org/10.1116/1.1474416

Abstract

View articletitled, Thickness-dependent renormalization of strain effects on self-organized InAs quantum dots grown on GaAs

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Growth and coalescence evolution of InAs on GaAs by molecular beam epitaxy

Tzer-En Nee; Ray-Ming Lin; Li-Zen Hsieh; Liann-Be Chang

J. Vac. Sci. Technol. A 20, 1128–1131 (2002) https://doi.org/10.1116/1.1474415

Abstract

View articletitled, Growth and coalescence evolution of InAs on GaAs by molecular beam epitaxy

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Growth and characterization of InAs on (100) InP ultrathin single quantum wells using tertiarybutylarsine and tertiarybutylphosphine

D. Frankland; R. A. Masut; R. Leonelli

J. Vac. Sci. Technol. A 20, 1132–1134 (2002) https://doi.org/10.1116/1.1474412

Abstract

View articletitled, Growth and characterization of InAs on (100) InP ultrathin single quantum wells using tertiarybutylarsine and tertiarybutylphosphine

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THIN FILMS

Material properties of ion beam deposited oxides for the optoelectronic industry

Adrian J. Devasahayam; Ivo Agatic; Boris Druz; Hari Hegde; Isaac Zaritsky; Suhit R. Das; Marcel Boudreau; Tao Yin; Robert Mallard; Sylvain LaFramboise

J. Vac. Sci. Technol. A 20, 1135–1140 (2002) https://doi.org/10.1116/1.1463077

Abstract

View articletitled, Material properties of ion beam deposited oxides for the optoelectronic industry

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Characterization of gadolinium and lanthanum oxide films on Si (100)

X. Wu; D. Landheer; G. I. Sproule; T. Quance; M. J. Graham; G. A. Botton

J. Vac. Sci. Technol. A 20, 1141–1144 (2002) https://doi.org/10.1116/1.1463079

Abstract

View articletitled, Characterization of gadolinium and lanthanum oxide films on Si (100)

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Characterization of thin ${ZrO}_{2}$ films deposited using $({ZrO}^{i} - \Pr)_{2} (thd)_{2}$ and $O_{2}$ on Si(100)

H.-W. Chen; D. Landheer; X. Wu; S. Moisa; G. I. Sproule; T.-S. Chao; T.-Y. Huang

J. Vac. Sci. Technol. A 20, 1145–1148 (2002) https://doi.org/10.1116/1.1467358

Abstract

View articletitled, Characterization of thin <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">ZrO</mi><mrow><mn>2</mn></mrow></msub></math> films deposited using <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">(</mi><msup xmlns=""><mi mathvariant="normal">ZrO</mi><mrow><mi>i</mi></mrow></msup><mi xmlns="">–</mi><mi mathvariant="normal" xmlns="">Pr</mi><msub xmlns=""><mi>)</mi><mrow><mn>2</mn></mrow></msub><mi xmlns="">(</mi><mi mathvariant="normal" xmlns="">thd</mi><msub xmlns=""><mi>)</mi><mrow><mn>2</mn></mrow></msub></math> and <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mn>2</mn></mrow></msub></math> on Si(100)

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Characterization of low permittivity (low-k) polymeric dielectric films for low temperature device integration

S. Sivoththaman; R. Jeyakumar; L. Ren; A. Nathan

J. Vac. Sci. Technol. A 20, 1149–1153 (2002) https://doi.org/10.1116/1.1463083

Abstract

View articletitled, Characterization of low permittivity (low-k) polymeric dielectric films for low temperature device integration

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Passivation of GaAs metal–insulator–semiconductor structures by $({NH}_{4})_{2} S_{x}$ and by evaporation of ${SiO}_{2}$

A. Jaouad; Ç. Aktik

J. Vac. Sci. Technol. A 20, 1154–1156 (2002) https://doi.org/10.1116/1.1463078

Abstract

View articletitled, Passivation of GaAs metal–insulator–semiconductor structures by <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">(</mi><msub xmlns=""><mi mathvariant="normal">NH</mi><mrow><mn>4</mn></mrow></msub><msub xmlns=""><mi>)</mi><mrow><mn>2</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">S</mi><mrow><mi>x</mi></mrow></msub></math> and by evaporation of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SiO</mi><mrow><mn>2</mn></mrow></msub></math>

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Reactive pulsed laser deposition of high-k silicon dioxide and silicon oxynitride thin films for gate-dielectric applications

E. Desbiens; R. Dolbec; M. A. El Khakani

J. Vac. Sci. Technol. A 20, 1157–1161 (2002) https://doi.org/10.1116/1.1467357

Abstract

View articletitled, Reactive pulsed laser deposition of high-k silicon dioxide and silicon oxynitride thin films for gate-dielectric applications

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Anomalous effective magnetoconductivity in disordered bipolar semiconductors: Theory and experimental simulation

Isaak Chaikovsky; Leonid Alperovich; Yuri Gurvich; Andrey Melnikov; Sergey Biryukov

J. Vac. Sci. Technol. A 20, 1162–1166 (2002) https://doi.org/10.1116/1.1460899

Abstract

View articletitled, Anomalous effective magnetoconductivity in disordered bipolar semiconductors: Theory and experimental simulation

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Issues

ARTICLES

BRIEF REPORTS AND COMMENTS

RAPID COMMUNICATIONS

ERRATA

Papers from the Tenth Canadian Semiconductor Technology Conference

MEMS AND MICROFABRICATION

CHARACTERIZATION

TRANSISTORS AND CIRCUITS

PHOTONICS

SENSORS AND DISPLAYS

EPITAXIAL STRUCTURES

THIN FILMS

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