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Magnetic and structural properties of Fe, Ni, and Mn-implanted SiC

N. Theodoropoulou; A. F. Hebard; S. N. G. Chu; M. E. Overberg; C. R. Abernathy; S. J. Pearton; R. G. Wilson; J. M. Zavada; Y. D. Park

J. Vac. Sci. Technol. A 20, 579–582 (2002) https://doi.org/10.1116/1.1465447

Abstract

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Initial growth and texture formation during reactive magnetron sputtering of TiN on Si(111)

T. Q. Li; S. Noda; Y. Tsuji; T. Ohsawa; H. Komiyama

J. Vac. Sci. Technol. A 20, 583–588 (2002) https://doi.org/10.1116/1.1458944

Abstract

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Effect of interfacial interactions on the initial growth of Cu on clean ${SiO}_{2}$ and 3-mercaptopropyltrimethoxysilane-modified ${SiO}_{2}$ substrates

Minghui Hu; Suguru Noda; Yoshiko Tsuji; Tatsuya Okubo; Yukio Yamaguchi; Hiroshi Komiyama

J. Vac. Sci. Technol. A 20, 589–596 (2002) https://doi.org/10.1116/1.1458941

Abstract

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Faraday cup detector array with electronic multiplexing for multichannel mass spectrometry

A. A. Scheidemann; R. B. Darling; F. J. Schumacher; A. Isakharov

J. Vac. Sci. Technol. A 20, 597–604 (2002) https://doi.org/10.1116/1.1458947

Abstract

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Formation and oxidation properties of $({Ti}_{1−x} {Al}_{x}) N$ thin films prepared by dc reactive sputtering

Y. Matsui; M. Hiratani; Y. Nakamura; I. Asano; F. Yano

J. Vac. Sci. Technol. A 20, 605–611 (2002) https://doi.org/10.1116/1.1458949

Abstract

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In-situ measurement of magnetostrictive coefficient and elastic properties for thin films during growth

Xuesong Jin; C. O. Kim; Y. P. Lee; Y. Zhou

J. Vac. Sci. Technol. A 20, 612–615 (2002) https://doi.org/10.1116/1.1458946

Abstract

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Characterization of gate oxynitrides by means of time of flight secondary ion mass spectrometry and x-ray photoelectron spectroscopy. Quantification of nitrogen

S. Ferrari; M. Perego; M. Fanciulli

J. Vac. Sci. Technol. A 20, 616–621 (2002) https://doi.org/10.1116/1.1458950

Abstract

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Preparation of high-pressure phase boron nitride films by physical vapor deposition

P. W. Zhu; Z. He; Y. N. Zhao; D. M. Li; H. W. Liu; G. T. Zou

J. Vac. Sci. Technol. A 20, 622–624 (2002) https://doi.org/10.1116/1.1458948

Abstract

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Diamondlike carbon deposition on plastic films by plasma source ion implantation

T. Tanaka; M. Yoshida; M. Shinohara; T. Takagi

J. Vac. Sci. Technol. A 20, 625–633 (2002) https://doi.org/10.1116/1.1458942

Abstract

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Aluminum oxide films deposited in low pressure conditions by reactive pulsed dc magnetron sputtering

T. Seino; T. Sato

J. Vac. Sci. Technol. A 20, 634–637 (2002) https://doi.org/10.1116/1.1458943

Abstract

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Fluorine and boron co-doped diamond-like carbon films deposited by pulsed glow discharge plasma immersion ion processing

Xiao-Ming He; M. Hakovirta; A. M. Peters; B. Taylor; M. Nastasi

J. Vac. Sci. Technol. A 20, 638–642 (2002) https://doi.org/10.1116/1.1460890

Abstract

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Influence of standing-wave electric field pattern on the laser damage resistance of ${HfO}_{2}$ thin films

M. L. Protopapa; M. Alvisi; F. De Tomasi; M. Di Giulio; M. R. Perrone; S. Scaglione

J. Vac. Sci. Technol. A 20, 643–650 (2002) https://doi.org/10.1116/1.1460892

Abstract

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Etching of organosilicate glass low-k dielectric films in halogen plasmas

Steven A. Vitale; Herbert H. Sawin

J. Vac. Sci. Technol. A 20, 651–660 (2002) https://doi.org/10.1116/1.1460891

Abstract

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Influence of surface condition in Langmuir probe measurements

E. Stamate; K. Ohe

J. Vac. Sci. Technol. A 20, 661–666 (2002) https://doi.org/10.1116/1.1460893

Abstract

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Properties of combined TiN and Pt thin films applied to gas sensing

A. Elisabeth Åbom; Lars Hultman; Mats Eriksson; Ray D. Twesten

J. Vac. Sci. Technol. A 20, 667–673 (2002) https://doi.org/10.1116/1.1460889

Abstract

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Alternating stress field and superhardness effect in TiN/NbN superlattice films

Li Geyang; Han Zenghu; Tian Jiawan; Xu Junhua; Gu Mingyuan

J. Vac. Sci. Technol. A 20, 674–677 (2002) https://doi.org/10.1116/1.1460887

Abstract

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Effect of ion bombardment and substrate orientation on structure and properties of titanium nitride films deposited by unbalanced magnetron sputtering

S. Guruvenket; G. Mohan Rao

J. Vac. Sci. Technol. A 20, 678–682 (2002) https://doi.org/10.1116/1.1460888

Abstract

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A supersonic molecular beam for gas–surface interaction studies with synchrotron radiation

A. Baraldi; L. Rumiz; M. Moretuzzo; M. Barnaba; G. Comelli; S. Lizzit; G. Paolucci; R. Rosei; F. Buatier de Mongeot; U. Valbusa

J. Vac. Sci. Technol. A 20, 683–687 (2002) https://doi.org/10.1116/1.1460886

Abstract

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High precision measurements of arsenic and phosphorous implantation dose in silicon by secondary ion mass spectrometry

P. H. Chi; D. S. Simons; J. M. McKinley; F. A. Stevie; C. N. Granger

J. Vac. Sci. Technol. A 20, 688–692 (2002) https://doi.org/10.1116/1.1463084

Abstract

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Oxygen plasma effects on optical properties of ZnSe films

Li Yan; John A. Woollam; Eva Franke

J. Vac. Sci. Technol. A 20, 693–701 (2002) https://doi.org/10.1116/1.1463085

Abstract

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Ellipsometric method for real time control of thin film deposition on imperfect substrates

A. Hofrichter; T. Heitz; P. Bulkin; B. Drevillon

J. Vac. Sci. Technol. A 20, 702–706 (2002) https://doi.org/10.1116/1.1464843

Abstract

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Transience of plasma surface modification as an adhesion promoter for polychlorotrifluorethylene

S. Subrahmanyan; J. G. Dillard; B. J. Love; M. Romand; M. Charbonnier

J. Vac. Sci. Technol. A 20, 707–713 (2002) https://doi.org/10.1116/1.1464837

Abstract

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Ion assistance effects on electron beam deposited ${MgF}_{2}$ films

M. Alvisi; F. De Tomasi; A. Della Patria; M. Di Giulio; E. Masetti; M. R. Perrone; M. L. Protopapa; A. Tepore

J. Vac. Sci. Technol. A 20, 714–720 (2002) https://doi.org/10.1116/1.1464836

Abstract

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Characterization of High Dose Mn, Fe, and Ni implantation into p-GaN

S. J. Pearton; M. E. Overberg; G. Thaler; C. R. Abernathy; N. Theodoropoulou; A. F. Hebard; S. N. G. Chu; R. G. Wilson; J. M. Zavada; A. Y. Polyakov; A. V. Osinsky; P. E. Norris; P. P. Chow; A. M. Wowchack; J. M. Van Hove; Y. D. Park

J. Vac. Sci. Technol. A 20, 721–724 (2002) https://doi.org/10.1116/1.1465449

Abstract

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Amorphous boron coatings produced with vacuum arc deposition technology

C. C. Klepper; R. C. Hazelton; E. J. Yadlowsky; E. P. Carlson; M. D. Keitz; J. M. Williams; R. A. Zuhr; D. B. Poker

J. Vac. Sci. Technol. A 20, 725–732 (2002) https://doi.org/10.1116/1.1464844

Abstract

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Interfacial mechanism studies of electroless plated Cu films on $a$ -Ta:N layers catalyzed by PIII

Jian-Hong Lin; Tzu-Li Lee; Wei-Jen Hsieh; Chien-Cheng Lin; Chwung-Shan Kou; Han C. Shih

J. Vac. Sci. Technol. A 20, 733–740 (2002) https://doi.org/10.1116/1.1465448

Abstract

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Preferential orientation of short chain vapor deposited polyaniline thin films on gold

B. Xu; Jaewu Choi; P. A. Dowben

J. Vac. Sci. Technol. A 20, 741–743 (2002) https://doi.org/10.1116/1.1465450

Abstract

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Debris reduction for copper and diamond-like carbon thin films produced by magnetically guided pulsed laser deposition

Y. Y. Tsui; H. Minami; D. Vick; R. Fedosejevs

J. Vac. Sci. Technol. A 20, 744–747 (2002) https://doi.org/10.1116/1.1467664

Abstract

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Deep in situ dry-etch monitoring of III-V multilayer structures using laser reflectometry and reflectivity modeling

H. Moussa; R. Daneau; C. Mériadec; L. Manin; I. Sagnes; R. Raj

J. Vac. Sci. Technol. A 20, 748–753 (2002) https://doi.org/10.1116/1.1468652

Abstract

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Stress changes in chemical vapor deposition tungsten silicide (polycide) film measured by x-ray diffraction

Joshua Pelleg; E. Elish

J. Vac. Sci. Technol. A 20, 754–761 (2002) https://doi.org/10.1116/1.1467663

Abstract

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Electron dynamics in unoccupied molecular orbitals of two blue-light-emitting organic electroluminescent materials

H. S. Karlsson; K. Read; R. Haight

J. Vac. Sci. Technol. A 20, 762–765 (2002) https://doi.org/10.1116/1.1467666

Abstract

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High-density plasma-induced etch damage of wafer-bonded AlGaInP/mirror/Si light-emitting diodes

D. S. Wuu; R. H. Horng; S. H. Huang; C. R. Chung

J. Vac. Sci. Technol. A 20, 766–771 (2002) https://doi.org/10.1116/1.1467665

Abstract

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Structure and corrosion properties of PVD Cr–N coatings

C. Liu; Q. Bi; H. Ziegele; A. Leyland; A. Matthews

J. Vac. Sci. Technol. A 20, 772–780 (2002) https://doi.org/10.1116/1.1468651

Abstract

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In situ probing of surface hydrides on hydrogenated amorphous silicon using attenuated total reflection infrared spectroscopy

W. M. M. Kessels; Denise C. Marra; M. C. M. van de Sanden; Eray S. Aydil

J. Vac. Sci. Technol. A 20, 781–789 (2002) https://doi.org/10.1116/1.1469012

Abstract

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Morphology and electronic transport of polycrystalline silicon films deposited by ${SiF}_{4} / H_{2}$ at a substrate temperature of 200 °C

Sukti Hazra; Sumita Mukhopadhyay; Swati Ray

J. Vac. Sci. Technol. A 20, 790–796 (2002) https://doi.org/10.1116/1.1469008

Abstract

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Electronic transport in perylenetetracarboxylic dianhydride: The role of In diffusion

Robert Hudej; Gvido Bratina

J. Vac. Sci. Technol. A 20, 797–801 (2002) https://doi.org/10.1116/1.1470513

Abstract

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Growth kinetics and initial stage growth during plasma-enhanced Ti atomic layer deposition

H. Kim; S. M. Rossnagel

J. Vac. Sci. Technol. A 20, 802–808 (2002) https://doi.org/10.1116/1.1469009

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Deposition of ${Ga}_{2} O_{3−x}$ ultrathin films on GaAs by e-beam evaporation

N. C. Oldham; C. J. Hill; C. M. Garland; T. C. McGill

J. Vac. Sci. Technol. A 20, 809–813 (2002) https://doi.org/10.1116/1.1469011

Abstract

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Gaseous mixture flow through a long tube at arbitrary Knudsen numbers

Felix Sharipov; Denize Kalempa

J. Vac. Sci. Technol. A 20, 814–822 (2002) https://doi.org/10.1116/1.1469010

Abstract

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Microstructure and mechanical properties of Zr–Si–N films prepared by rf-reactive sputtering

M. Nose; W. A. Chiou; M. Zhou; T. Mae; M. Meshii

J. Vac. Sci. Technol. A 20, 823–828 (2002) https://doi.org/10.1116/1.1468657

Abstract

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Vacuum system design for the 3 GeV-proton synchrotron of JAERI-KEK joint project

Michikazu Kinsho; Daiji Nishizawa; Yoshio Saito; Hiromitsu Suzuki; Hideaki Yokomizo

J. Vac. Sci. Technol. A 20, 829–832 (2002) https://doi.org/10.1116/1.1468656

Abstract

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Arc generation from sputtering plasma-dielectric inclusion interactions

C. E. Wickersham, Jr.; J. E. Poole; J. S. Fan

J. Vac. Sci. Technol. A 20, 833–838 (2002) https://doi.org/10.1116/1.1468655

Abstract

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On the mechanism of self-deceleration of the thin oxide film growth

D. G. Mukhambetov; O. V. Chalaya

J. Vac. Sci. Technol. A 20, 839–842 (2002) https://doi.org/10.1116/1.1471353

Abstract

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The optical properties and applications of AlN thin films prepared by a helicon sputtering system

W. Y. Chiu; C. H. Wu; H. L. Kao; Erik S. Jeng; Jyh Shin Chen; C. C. Jaing

J. Vac. Sci. Technol. A 20, 843–847 (2002) https://doi.org/10.1116/1.1470512

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Simulation of hydrogen outgassing in ultrahigh vacuum chamber and fusion device by recombination limited model

K. Akaishi; M. Nakasuga; Y. Funato

J. Vac. Sci. Technol. A 20, 848–856 (2002) https://doi.org/10.1116/1.1471354

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Photon-stimulated desorption from an aluminum surface after water vapor exposure

J. R. Chen; K. Y. Yang; J. Y. Yang; G. Y. Hsiung

J. Vac. Sci. Technol. A 20, 857–860 (2002) https://doi.org/10.1116/1.1471355

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Dependence of electrical and optical properties of amorphous SiC:H thin films grown by rf plasma enhanced chemical vapor deposition on annealing temperature

M. G. Park; W. S. Choi; B. Hong; Y. T. Kim; D. H. Yoon

J. Vac. Sci. Technol. A 20, 861–864 (2002) https://doi.org/10.1116/1.1472416

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Annealing effects of aluminum silicate films grown on Si(100)

M.-H. Cho; Y. S. Rho; H.-J. Choi; S. W. Nam; D.-H. Ko; J. H. Ku; H. C. Kang; D. Y. Noh; C. N. Whang; K. Jeong

J. Vac. Sci. Technol. A 20, 865–872 (2002) https://doi.org/10.1116/1.1472422

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Ion energy distributions at rf-biased wafer surfaces

J. R. Woodworth; I. C. Abraham; M. E. Riley; P. A. Miller; T. W. Hamilton; B. P. Aragon; R. J. Shul; C. G. Willison

J. Vac. Sci. Technol. A 20, 873–886 (2002) https://doi.org/10.1116/1.1472421

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Early stages of interface reactions between AlN and Ti thin films

M. Pinkas; N. Frage; N. Froumin; J. Pelleg; M. P. Dariel

J. Vac. Sci. Technol. A 20, 887–896 (2002) https://doi.org/10.1116/1.1472417

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Determination of atomic potential energy for Pd adatom diffusion across W (111) islands and surfaces

Tsu-Yi Fu; Lung-Chieh Cheng; Tien T. Tsong

J. Vac. Sci. Technol. A 20, 897–899 (2002) https://doi.org/10.1116/1.1472429

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Uniformity in large area ZnO:Al films prepared by reactive midfrequency magnetron sputtering

R. J. Hong; X. Jiang; V. Sittinger; B. Szyszka; T. Höing; G. Bräuer; G. Heide; G. H. Frischat

J. Vac. Sci. Technol. A 20, 900–905 (2002) https://doi.org/10.1116/1.1472420

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Direct simulation of rarefied gas flows in rotating spiral channels

Joong-Sik Heo; Young-Kyu Hwang

J. Vac. Sci. Technol. A 20, 906–910 (2002) https://doi.org/10.1116/1.1472418

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Interface between poly (9,9-dioctylfluorene) and alkali metals: cesium, potassium, sodium, and lithium

M. K. Fung; S. L. Lai; S. N. Bao; C. S. Lee; S. T. Lee; W. W. Wu; M. Inbasekaran; J. J. O’Brien

J. Vac. Sci. Technol. A 20, 911–918 (2002) https://doi.org/10.1116/1.1472419

Abstract

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Langmuir probe measurements in an inductively coupled plasma: Electron energy distribution functions in polymerizing fluorocarbon gases used for selective etching of ${SiO}_{2}$

Freddy Gaboriau; Marie-Claude Peignon; Gilles Cartry; Laetitia Rolland; David Eon; Christophe Cardinaud; Guy Turban

J. Vac. Sci. Technol. A 20, 919–927 (2002) https://doi.org/10.1116/1.1474419

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Microstructural characterization of radio frequency magnetron sputter-deposited ${Ga}_{2} O_{3} : Mn$ phosphor thin films

Joo Han Kim; Paul H. Holloway

J. Vac. Sci. Technol. A 20, 928–933 (2002) https://doi.org/10.1116/1.1474418

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Impact of residual by-products from tungsten film deposition on process integration due to nonuniformity of the tungsten film

Ardy Sidhwa; Chuck Spinner; Todd Gandy; Steve Melosky; William Brown; Simon Ang; Hameed Naseem; Richard Ulrich

J. Vac. Sci. Technol. A 20, 934–940 (2002) https://doi.org/10.1116/1.1474417

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Optical properties of bias-induced ${CH}_{4} {–H}_{2}$ plasma for diamond film deposition

X. D. Zhu; R. J. Zhan; H. Y. Zhou; X. H. Wen; D. Li

J. Vac. Sci. Technol. A 20, 941–944 (2002) https://doi.org/10.1116/1.1474420

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Investigation of the silicon ion density during molecular beam epitaxy growth

G. Eifler; E. Kasper; Kh. Ashurov; S. Morozov

J. Vac. Sci. Technol. A 20, 945–949 (2002) https://doi.org/10.1116/1.1474421

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BRIEF REPORTS AND COMMENTS

Secondary electron emission for layered structures

SeGi Yu; Whikun Yi; Taewon Jeong; Jeonghee Lee; Jungna Heo; Chang Soo Lee; D. Jeon; J. M. Kim

J. Vac. Sci. Technol. A 20, 950–952 (2002) https://doi.org/10.1116/1.1472415

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RAPID COMMUNICATIONS

Effects of initial layers on surface roughness and crystallinity of microcrystalline silicon thin films formed by remote electron cyclotron resonance silane plasma

Kazuya Murata; Daisuke Kikukawa; Masaru Hori; Toshio Goto; Masafumi Ito

J. Vac. Sci. Technol. A 20, 953–956 (2002) https://doi.org/10.1116/1.1458945

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ERRATA

Erratum: “Accommodation coefficient of tangential momentum on atomically clean and contaminated surfaces” [J. Vac. Sci. Technol. A 19, 2499 (2001)]

Oleg V. Sazhin; Sergei F. Borisov; Felix Sharipov

J. Vac. Sci. Technol. A 20, 957 (2002) https://doi.org/10.1116/1.1459081

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Papers from the Tenth Canadian Semiconductor Technology Conference

MEMS AND MICROFABRICATION

Dry etch process optimization for small-area a-Si:H vertical thin film transistor

I. Chan; A. Nathan

J. Vac. Sci. Technol. A 20, 962–965 (2002) https://doi.org/10.1116/1.1463073

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Development of a microwave microelectromechanical systems switch

S. N. Qiu; C. X. Qiu; I. Shih; M. Yu; G. Brassard; G. Séguin

J. Vac. Sci. Technol. A 20, 966–970 (2002) https://doi.org/10.1116/1.1467355

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Heat transfer analysis and optimization of two-beam microelectromechanical thermal actuators

Ryan Hickey; Marek Kujath; Ted Hubbard

J. Vac. Sci. Technol. A 20, 971–974 (2002) https://doi.org/10.1116/1.1468654

Abstract

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Dry etching of polydimethylsiloxane for microfluidic systems

J. Garra; T. Long; J. Currie; T. Schneider; R. White; M. Paranjape

J. Vac. Sci. Technol. A 20, 975–982 (2002) https://doi.org/10.1116/1.1460896

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Low temperature ${SF}_{6} / O_{2}$ electron cyclotron resonance plasma etching for polysilicon gates

I. Hasan; C. A. Pawlowicz; L. P. Berndt; N. G. Tarr

J. Vac. Sci. Technol. A 20, 983–985 (2002) https://doi.org/10.1116/1.1472426

Abstract

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Crystallization transformations in vacuum-deposited amorphous aluminum fluoride self-developing thin-film resists induced by electron-beam irradiation

G. S. Chen; P. Y. Lee; C. B. Boothroyd; C. J. Humphreys

J. Vac. Sci. Technol. A 20, 986–990 (2002) https://doi.org/10.1116/1.1464842

Abstract

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Sensitive in situ method to measure the rate of neutral free radical production by photodeionization of negative ion beams

Keiji Hayashi; Kenji Kameko; Seiji Kawakita; Yasunori Kawamura; Hiroshi Konno; Hideki Kojima; Takuo Kanayama

J. Vac. Sci. Technol. A 20, 991–994 (2002) https://doi.org/10.1116/1.1460902

Abstract

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Ab initio molecular orbital characterization of dimethyl group-III azides as sources for photolytic production of free radical beams

Keiji Hayashi; Takuo Kanayama; Toyohiro Shimizu; Yasunori Kawamura; Kenji Kameko; Seiji Kawakita

J. Vac. Sci. Technol. A 20, 995–998 (2002) https://doi.org/10.1116/1.1460895

Abstract

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CHARACTERIZATION

Quantitative voltage measurement of high-frequency internal integrated circuit signals by scanning probe microscopy

Z. Weng; C. J. Falkingham; G. E. Bridges; D. J. Thomson

J. Vac. Sci. Technol. A 20, 999–1003 (2002) https://doi.org/10.1116/1.1460901

Abstract

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Microstructural analysis of Ti/Al/Ti/Au ohmic contacts to n-AlGaN/GaN

J. Chen; D. G. Ivey; J. Bardwell; Y. Liu; H. Tang; J. B. Webb

J. Vac. Sci. Technol. A 20, 1004–1010 (2002) https://doi.org/10.1116/1.1472428

Abstract

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Determination of structural parameters in heterojunction bipolar transistors by x-ray diffraction with (002) reflection

A. Shen; E. M. Griswold; G. Hillier; L. Dang; A. Kuhl; R. Arès; D. Clark; I. D. Calder

J. Vac. Sci. Technol. A 20, 1011–1014 (2002) https://doi.org/10.1116/1.1467356

Abstract

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Galvanic corrosion behavior of GaAs in acid solutions

G. S. Weng; J. L. Luo; D. G. Ivey

J. Vac. Sci. Technol. A 20, 1015–1022 (2002) https://doi.org/10.1116/1.1460898

Abstract

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Atomic force microscopy study of the early stages of Sn phase separation on Si(111) surfaces

Qin Hu; Martin Zinke-Allmang

J. Vac. Sci. Technol. A 20, 1023–1026 (2002) https://doi.org/10.1116/1.1463081

Abstract

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$1/f$ noise of amorphous indium oxide

Robert E. Johanson; S. O. Kasap

J. Vac. Sci. Technol. A 20, 1027–1029 (2002) https://doi.org/10.1116/1.1464841

Abstract

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TRANSISTORS AND CIRCUITS

Design of high speed Si/SiGe heterojunction complementary metal–oxide–semiconductor field effect transistors with reduced short-channel effects

P. W. Li; W. M. Liao

J. Vac. Sci. Technol. A 20, 1030–1033 (2002) https://doi.org/10.1116/1.1474422

Abstract

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2.4 GHz voltage control oscillator and power amplifier monolithic microwave integrated circuits based on 0.25 μm complementary metal–oxide–semiconductor technologies

Chao-Chih Hsiao; Chin-Wei Kuo; Chien-Chih Ho; Yi-Jen Chan

J. Vac. Sci. Technol. A 20, 1034–1037 (2002) https://doi.org/10.1116/1.1474414

Abstract

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Modeling of the static and dynamic behavior of hydrogenated amorphous silicon thin-film transistors

P. Servati; A. Nathan

J. Vac. Sci. Technol. A 20, 1038–1042 (2002) https://doi.org/10.1116/1.1472427

Abstract

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Design of multiplexer in amorphous silicon technology

N. Mohan; K. S. Karim; A. Nathan

J. Vac. Sci. Technol. A 20, 1043–1047 (2002) https://doi.org/10.1116/1.1474413

Abstract

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Extended radio frequency nonlinear model for power prediction of AlGaAs/InGaAs pseudomorphic high electron mobility transistors

Cheng-Kuo Lin; Yi-Jen Chan

J. Vac. Sci. Technol. A 20, 1048–1051 (2002) https://doi.org/10.1116/1.1463080

Abstract

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PHOTONICS

Optoelectronic integration using aligned metal-to-semiconductor bonding

Wojciech P. Giziewicz; Clifton G. Fonstad, Jr.

J. Vac. Sci. Technol. A 20, 1052–1056 (2002) https://doi.org/10.1116/1.1464838

Abstract

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Ultrafast high-field carrier transport in a GaAs photoconductive switch

M. D. Cummings; J. F. Holzman; A. Y. Elezzabi

J. Vac. Sci. Technol. A 20, 1057–1060 (2002) https://doi.org/10.1116/1.1468653

Abstract

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Reliability and low-frequency noise measurements of InGaAsP multiple quantum well buried-heterostructure lasers

Gregory Letal; Saulius Smetona; Robert Mallard; Jonas Matukas; Vilius Palenskis; Sandra Pralgauskaite

J. Vac. Sci. Technol. A 20, 1061–1066 (2002) https://doi.org/10.1116/1.1464839

Abstract

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On the optimum design of the front-end PIN-heterojunction bipolar transistor optoelectronic integrated circuit photoreceiver

N. R. Das; M. J. Deen

J. Vac. Sci. Technol. A 20, 1067–1071 (2002) https://doi.org/10.1116/1.1472424

Abstract

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Patterning of wave guides in ${LiNbO}_{3}$ using ion beam etching and reactive ion beam etching

D. S. Hines; K. E. Williams

J. Vac. Sci. Technol. A 20, 1072–1075 (2002) https://doi.org/10.1116/1.1472425

Abstract

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Control of dielectric cap induced band-gap shift in 1.55 μm laser structures

J. Wojcik; B. J. Robinson; D. A. Thompson; P. Mascher

J. Vac. Sci. Technol. A 20, 1076–1078 (2002) https://doi.org/10.1116/1.1463074

Abstract

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Submicron, high speed complementary metal–oxide semiconductor compatible metal–semiconductor–metal photodetector

A. M. DeVries; N. G. Tarr; P. Cheben; P. D. Grant; S. Janz; D.-X. Xu

J. Vac. Sci. Technol. A 20, 1079–1081 (2002) https://doi.org/10.1116/1.1475981

Abstract

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SENSORS AND DISPLAYS

Sensitivity of x-ray photoconductors: Charge trapping and absorption-limited universal sensitivity curves

M. Zahangir Kabir; S. O. Kasap

J. Vac. Sci. Technol. A 20, 1082–1086 (2002) https://doi.org/10.1116/1.1460900

Abstract

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Amorphous silicon nitride deposited at 120 °C for organic light emitting display-thin film transistor arrays on plastic substrates

Denis Stryahilev; Andrei Sazonov; Arokia Nathan

J. Vac. Sci. Technol. A 20, 1087–1090 (2002) https://doi.org/10.1116/1.1472423

Abstract

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Fabrication of ${Gd}_{2} O_{2} S:Tb$ based phosphor films coupled with photodetectors for x-ray imaging applications

S. Tao; Z. H. Gu; A. Nathan

J. Vac. Sci. Technol. A 20, 1091–1094 (2002) https://doi.org/10.1116/1.1463082

Abstract

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Active pixel sensor architectures in $a$ -SiH for medical imaging

Karim S. Karim; Arokia Nathan; John A. Rowlands

J. Vac. Sci. Technol. A 20, 1095–1099 (2002) https://doi.org/10.1116/1.1460897

Abstract

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High-temperature gas sensor using perovskite thin films on a suspended microheater

O. Grudin; R. Marinescu; L. M. Landsberger; M. Kahrizi; G. Frolov; J. D. N. Cheeke; S. Chehab; M. Post; J. Tunney; X. Du; D. Yang; D. Segall

J. Vac. Sci. Technol. A 20, 1100–1104 (2002) https://doi.org/10.1116/1.1463072

Abstract

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Effect of interface trapping on the frequency response of a photodetector

N. R. Das; M. Jamal Deen

J. Vac. Sci. Technol. A 20, 1105–1110 (2002) https://doi.org/10.1116/1.1463076

Abstract

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Capacitance accelerometer with metal microbeam

I. Chaikovsky; M. Reznik; I. Karnovsky

J. Vac. Sci. Technol. A 20, 1111–1115 (2002) https://doi.org/10.1116/1.1463075

Abstract

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EPITAXIAL STRUCTURES

Effect of the interface on the local structure of Ge–Si nanostructures

A. V. Kolobov; H. Oyanagi; K. Brunner; G. Abstreiter; Y. Maeda; A. A. Shklyaev; S. Yamasaki; M. Ichikawa; K. Tanaka

J. Vac. Sci. Technol. A 20, 1116–1119 (2002) https://doi.org/10.1116/1.1460894

Abstract

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Growth and characterization of ultrahigh vacuum/chemical vapor deposition SiGe epitaxial layers on bulk single-crystal SiGe and Si substrates

S. R. Sheng; M. Dion; S. P. McAlister; N. L. Rowell

J. Vac. Sci. Technol. A 20, 1120–1124 (2002) https://doi.org/10.1116/1.1464840

Abstract

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Thickness-dependent renormalization of strain effects on self-organized InAs quantum dots grown on GaAs

Ray-Ming Lin; Tzer-En Nee; Mei-Ching Tsai; Yuan-Hao Chang; Ping-Lin Fan; Rong-Seng Chang

J. Vac. Sci. Technol. A 20, 1125–1127 (2002) https://doi.org/10.1116/1.1474416

Abstract

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Growth and coalescence evolution of InAs on GaAs by molecular beam epitaxy

Tzer-En Nee; Ray-Ming Lin; Li-Zen Hsieh; Liann-Be Chang

J. Vac. Sci. Technol. A 20, 1128–1131 (2002) https://doi.org/10.1116/1.1474415

Abstract

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Growth and characterization of InAs on (100) InP ultrathin single quantum wells using tertiarybutylarsine and tertiarybutylphosphine

D. Frankland; R. A. Masut; R. Leonelli

J. Vac. Sci. Technol. A 20, 1132–1134 (2002) https://doi.org/10.1116/1.1474412

Abstract

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THIN FILMS

Material properties of ion beam deposited oxides for the optoelectronic industry

Adrian J. Devasahayam; Ivo Agatic; Boris Druz; Hari Hegde; Isaac Zaritsky; Suhit R. Das; Marcel Boudreau; Tao Yin; Robert Mallard; Sylvain LaFramboise

J. Vac. Sci. Technol. A 20, 1135–1140 (2002) https://doi.org/10.1116/1.1463077

Abstract

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Characterization of gadolinium and lanthanum oxide films on Si (100)

X. Wu; D. Landheer; G. I. Sproule; T. Quance; M. J. Graham; G. A. Botton

J. Vac. Sci. Technol. A 20, 1141–1144 (2002) https://doi.org/10.1116/1.1463079

Abstract

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Characterization of thin ${ZrO}_{2}$ films deposited using $({ZrO}^{i} - \Pr)_{2} (thd)_{2}$ and $O_{2}$ on Si(100)

H.-W. Chen; D. Landheer; X. Wu; S. Moisa; G. I. Sproule; T.-S. Chao; T.-Y. Huang

J. Vac. Sci. Technol. A 20, 1145–1148 (2002) https://doi.org/10.1116/1.1467358

Abstract

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Characterization of low permittivity (low-k) polymeric dielectric films for low temperature device integration

S. Sivoththaman; R. Jeyakumar; L. Ren; A. Nathan

J. Vac. Sci. Technol. A 20, 1149–1153 (2002) https://doi.org/10.1116/1.1463083

Abstract

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Passivation of GaAs metal–insulator–semiconductor structures by $({NH}_{4})_{2} S_{x}$ and by evaporation of ${SiO}_{2}$

A. Jaouad; Ç. Aktik

J. Vac. Sci. Technol. A 20, 1154–1156 (2002) https://doi.org/10.1116/1.1463078

Abstract

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Reactive pulsed laser deposition of high-k silicon dioxide and silicon oxynitride thin films for gate-dielectric applications

E. Desbiens; R. Dolbec; M. A. El Khakani

J. Vac. Sci. Technol. A 20, 1157–1161 (2002) https://doi.org/10.1116/1.1467357

Abstract

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Anomalous effective magnetoconductivity in disordered bipolar semiconductors: Theory and experimental simulation

Isaak Chaikovsky; Leonid Alperovich; Yuri Gurvich; Andrey Melnikov; Sergey Biryukov

J. Vac. Sci. Technol. A 20, 1162–1166 (2002) https://doi.org/10.1116/1.1460899

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Papers from the Tenth Canadian Semiconductor Technology Conference

MEMS AND MICROFABRICATION

CHARACTERIZATION

TRANSISTORS AND CIRCUITS

PHOTONICS

SENSORS AND DISPLAYS

EPITAXIAL STRUCTURES

THIN FILMS

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