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Issues
May 2002
ISSN 0734-2101
EISSN 1520-8559
ARTICLES
Magnetic and structural properties of Fe, Ni, and Mn-implanted SiC
N. Theodoropoulou; A. F. Hebard; S. N. G. Chu; M. E. Overberg; C. R. Abernathy; S. J. Pearton; R. G. Wilson; J. M. Zavada; Y. D. Park
J. Vac. Sci. Technol. A 20, 579–582 (2002)
https://doi.org/10.1116/1.1465447
Initial growth and texture formation during reactive magnetron sputtering of TiN on Si(111)
J. Vac. Sci. Technol. A 20, 583–588 (2002)
https://doi.org/10.1116/1.1458944
Effect of interfacial interactions on the initial growth of Cu on clean and 3-mercaptopropyltrimethoxysilane-modified substrates
J. Vac. Sci. Technol. A 20, 589–596 (2002)
https://doi.org/10.1116/1.1458941
Faraday cup detector array with electronic multiplexing for multichannel mass spectrometry
J. Vac. Sci. Technol. A 20, 597–604 (2002)
https://doi.org/10.1116/1.1458947
Formation and oxidation properties of thin films prepared by dc reactive sputtering
J. Vac. Sci. Technol. A 20, 605–611 (2002)
https://doi.org/10.1116/1.1458949
In-situ measurement of magnetostrictive coefficient and elastic properties for thin films during growth
J. Vac. Sci. Technol. A 20, 612–615 (2002)
https://doi.org/10.1116/1.1458946
Preparation of high-pressure phase boron nitride films by physical vapor deposition
J. Vac. Sci. Technol. A 20, 622–624 (2002)
https://doi.org/10.1116/1.1458948
Diamondlike carbon deposition on plastic films by plasma source ion implantation
J. Vac. Sci. Technol. A 20, 625–633 (2002)
https://doi.org/10.1116/1.1458942
Aluminum oxide films deposited in low pressure conditions by reactive pulsed dc magnetron sputtering
J. Vac. Sci. Technol. A 20, 634–637 (2002)
https://doi.org/10.1116/1.1458943
Fluorine and boron co-doped diamond-like carbon films deposited by pulsed glow discharge plasma immersion ion processing
J. Vac. Sci. Technol. A 20, 638–642 (2002)
https://doi.org/10.1116/1.1460890
Influence of standing-wave electric field pattern on the laser damage resistance of thin films
J. Vac. Sci. Technol. A 20, 643–650 (2002)
https://doi.org/10.1116/1.1460892
Etching of organosilicate glass low-k dielectric films in halogen plasmas
J. Vac. Sci. Technol. A 20, 651–660 (2002)
https://doi.org/10.1116/1.1460891
Properties of combined TiN and Pt thin films applied to gas sensing
J. Vac. Sci. Technol. A 20, 667–673 (2002)
https://doi.org/10.1116/1.1460889
Alternating stress field and superhardness effect in TiN/NbN superlattice films
J. Vac. Sci. Technol. A 20, 674–677 (2002)
https://doi.org/10.1116/1.1460887
A supersonic molecular beam for gas–surface interaction studies with synchrotron radiation
A. Baraldi; L. Rumiz; M. Moretuzzo; M. Barnaba; G. Comelli; S. Lizzit; G. Paolucci; R. Rosei; F. Buatier de Mongeot; U. Valbusa
J. Vac. Sci. Technol. A 20, 683–687 (2002)
https://doi.org/10.1116/1.1460886
High precision measurements of arsenic and phosphorous implantation dose in silicon by secondary ion mass spectrometry
J. Vac. Sci. Technol. A 20, 688–692 (2002)
https://doi.org/10.1116/1.1463084
Ellipsometric method for real time control of thin film deposition on imperfect substrates
J. Vac. Sci. Technol. A 20, 702–706 (2002)
https://doi.org/10.1116/1.1464843
Transience of plasma surface modification as an adhesion promoter for polychlorotrifluorethylene
J. Vac. Sci. Technol. A 20, 707–713 (2002)
https://doi.org/10.1116/1.1464837
Ion assistance effects on electron beam deposited films
M. Alvisi; F. De Tomasi; A. Della Patria; M. Di Giulio; E. Masetti; M. R. Perrone; M. L. Protopapa; A. Tepore
J. Vac. Sci. Technol. A 20, 714–720 (2002)
https://doi.org/10.1116/1.1464836
Characterization of High Dose Mn, Fe, and Ni implantation into p-GaN
S. J. Pearton; M. E. Overberg; G. Thaler; C. R. Abernathy; N. Theodoropoulou; A. F. Hebard; S. N. G. Chu; R. G. Wilson; J. M. Zavada; A. Y. Polyakov; A. V. Osinsky; P. E. Norris; P. P. Chow; A. M. Wowchack; J. M. Van Hove; Y. D. Park
J. Vac. Sci. Technol. A 20, 721–724 (2002)
https://doi.org/10.1116/1.1465449
Amorphous boron coatings produced with vacuum arc deposition technology
C. C. Klepper; R. C. Hazelton; E. J. Yadlowsky; E. P. Carlson; M. D. Keitz; J. M. Williams; R. A. Zuhr; D. B. Poker
J. Vac. Sci. Technol. A 20, 725–732 (2002)
https://doi.org/10.1116/1.1464844
Interfacial mechanism studies of electroless plated Cu films on -Ta:N layers catalyzed by PIII
J. Vac. Sci. Technol. A 20, 733–740 (2002)
https://doi.org/10.1116/1.1465448
Preferential orientation of short chain vapor deposited polyaniline thin films on gold
J. Vac. Sci. Technol. A 20, 741–743 (2002)
https://doi.org/10.1116/1.1465450
Debris reduction for copper and diamond-like carbon thin films produced by magnetically guided pulsed laser deposition
J. Vac. Sci. Technol. A 20, 744–747 (2002)
https://doi.org/10.1116/1.1467664
Deep in situ dry-etch monitoring of III-V multilayer structures using laser reflectometry and reflectivity modeling
J. Vac. Sci. Technol. A 20, 748–753 (2002)
https://doi.org/10.1116/1.1468652
Stress changes in chemical vapor deposition tungsten silicide (polycide) film measured by x-ray diffraction
J. Vac. Sci. Technol. A 20, 754–761 (2002)
https://doi.org/10.1116/1.1467663
Electron dynamics in unoccupied molecular orbitals of two blue-light-emitting organic electroluminescent materials
J. Vac. Sci. Technol. A 20, 762–765 (2002)
https://doi.org/10.1116/1.1467666
High-density plasma-induced etch damage of wafer-bonded AlGaInP/mirror/Si light-emitting diodes
J. Vac. Sci. Technol. A 20, 766–771 (2002)
https://doi.org/10.1116/1.1467665
Structure and corrosion properties of PVD Cr–N coatings
J. Vac. Sci. Technol. A 20, 772–780 (2002)
https://doi.org/10.1116/1.1468651
In situ probing of surface hydrides on hydrogenated amorphous silicon using attenuated total reflection infrared spectroscopy
J. Vac. Sci. Technol. A 20, 781–789 (2002)
https://doi.org/10.1116/1.1469012
Morphology and electronic transport of polycrystalline silicon films deposited by at a substrate temperature of 200 °C
J. Vac. Sci. Technol. A 20, 790–796 (2002)
https://doi.org/10.1116/1.1469008
Electronic transport in perylenetetracarboxylic dianhydride: The role of In diffusion
J. Vac. Sci. Technol. A 20, 797–801 (2002)
https://doi.org/10.1116/1.1470513
Growth kinetics and initial stage growth during plasma-enhanced Ti atomic layer deposition
J. Vac. Sci. Technol. A 20, 802–808 (2002)
https://doi.org/10.1116/1.1469009
Deposition of ultrathin films on GaAs by e-beam evaporation
J. Vac. Sci. Technol. A 20, 809–813 (2002)
https://doi.org/10.1116/1.1469011
Microstructure and mechanical properties of Zr–Si–N films prepared by rf-reactive sputtering
J. Vac. Sci. Technol. A 20, 823–828 (2002)
https://doi.org/10.1116/1.1468657
Vacuum system design for the 3 GeV-proton synchrotron of JAERI-KEK joint project
J. Vac. Sci. Technol. A 20, 829–832 (2002)
https://doi.org/10.1116/1.1468656
Arc generation from sputtering plasma-dielectric inclusion interactions
J. Vac. Sci. Technol. A 20, 833–838 (2002)
https://doi.org/10.1116/1.1468655
The optical properties and applications of AlN thin films prepared by a helicon sputtering system
J. Vac. Sci. Technol. A 20, 843–847 (2002)
https://doi.org/10.1116/1.1470512
Simulation of hydrogen outgassing in ultrahigh vacuum chamber and fusion device by recombination limited model
J. Vac. Sci. Technol. A 20, 848–856 (2002)
https://doi.org/10.1116/1.1471354
Photon-stimulated desorption from an aluminum surface after water vapor exposure
J. Vac. Sci. Technol. A 20, 857–860 (2002)
https://doi.org/10.1116/1.1471355
Annealing effects of aluminum silicate films grown on Si(100)
M.-H. Cho; Y. S. Rho; H.-J. Choi; S. W. Nam; D.-H. Ko; J. H. Ku; H. C. Kang; D. Y. Noh; C. N. Whang; K. Jeong
J. Vac. Sci. Technol. A 20, 865–872 (2002)
https://doi.org/10.1116/1.1472422
Ion energy distributions at rf-biased wafer surfaces
J. R. Woodworth; I. C. Abraham; M. E. Riley; P. A. Miller; T. W. Hamilton; B. P. Aragon; R. J. Shul; C. G. Willison
J. Vac. Sci. Technol. A 20, 873–886 (2002)
https://doi.org/10.1116/1.1472421
Early stages of interface reactions between AlN and Ti thin films
J. Vac. Sci. Technol. A 20, 887–896 (2002)
https://doi.org/10.1116/1.1472417
Determination of atomic potential energy for Pd adatom diffusion across W (111) islands and surfaces
J. Vac. Sci. Technol. A 20, 897–899 (2002)
https://doi.org/10.1116/1.1472429
Uniformity in large area ZnO:Al films prepared by reactive midfrequency magnetron sputtering
J. Vac. Sci. Technol. A 20, 900–905 (2002)
https://doi.org/10.1116/1.1472420
Interface between poly (9,9-dioctylfluorene) and alkali metals: cesium, potassium, sodium, and lithium
J. Vac. Sci. Technol. A 20, 911–918 (2002)
https://doi.org/10.1116/1.1472419
Langmuir probe measurements in an inductively coupled plasma: Electron energy distribution functions in polymerizing fluorocarbon gases used for selective etching of
Freddy Gaboriau; Marie-Claude Peignon; Gilles Cartry; Laetitia Rolland; David Eon; Christophe Cardinaud; Guy Turban
J. Vac. Sci. Technol. A 20, 919–927 (2002)
https://doi.org/10.1116/1.1474419
Microstructural characterization of radio frequency magnetron sputter-deposited phosphor thin films
J. Vac. Sci. Technol. A 20, 928–933 (2002)
https://doi.org/10.1116/1.1474418
Impact of residual by-products from tungsten film deposition on process integration due to nonuniformity of the tungsten film
Ardy Sidhwa; Chuck Spinner; Todd Gandy; Steve Melosky; William Brown; Simon Ang; Hameed Naseem; Richard Ulrich
J. Vac. Sci. Technol. A 20, 934–940 (2002)
https://doi.org/10.1116/1.1474417
Optical properties of bias-induced plasma for diamond film deposition
J. Vac. Sci. Technol. A 20, 941–944 (2002)
https://doi.org/10.1116/1.1474420
Investigation of the silicon ion density during molecular beam epitaxy growth
J. Vac. Sci. Technol. A 20, 945–949 (2002)
https://doi.org/10.1116/1.1474421
BRIEF REPORTS AND COMMENTS
Secondary electron emission for layered structures
J. Vac. Sci. Technol. A 20, 950–952 (2002)
https://doi.org/10.1116/1.1472415
RAPID COMMUNICATIONS
ERRATA
Papers from the Tenth Canadian Semiconductor Technology Conference
MEMS AND MICROFABRICATION
Development of a microwave microelectromechanical systems switch
J. Vac. Sci. Technol. A 20, 966–970 (2002)
https://doi.org/10.1116/1.1467355
Heat transfer analysis and optimization of two-beam microelectromechanical thermal actuators
J. Vac. Sci. Technol. A 20, 971–974 (2002)
https://doi.org/10.1116/1.1468654
Dry etching of polydimethylsiloxane for microfluidic systems
J. Vac. Sci. Technol. A 20, 975–982 (2002)
https://doi.org/10.1116/1.1460896
Low temperature electron cyclotron resonance plasma etching for polysilicon gates
J. Vac. Sci. Technol. A 20, 983–985 (2002)
https://doi.org/10.1116/1.1472426
Sensitive in situ method to measure the rate of neutral free radical production by photodeionization of negative ion beams
Keiji Hayashi; Kenji Kameko; Seiji Kawakita; Yasunori Kawamura; Hiroshi Konno; Hideki Kojima; Takuo Kanayama
J. Vac. Sci. Technol. A 20, 991–994 (2002)
https://doi.org/10.1116/1.1460902
Ab initio molecular orbital characterization of dimethyl group-III azides as sources for photolytic production of free radical beams
J. Vac. Sci. Technol. A 20, 995–998 (2002)
https://doi.org/10.1116/1.1460895
CHARACTERIZATION
Quantitative voltage measurement of high-frequency internal integrated circuit signals by scanning probe microscopy
J. Vac. Sci. Technol. A 20, 999–1003 (2002)
https://doi.org/10.1116/1.1460901
Microstructural analysis of Ti/Al/Ti/Au ohmic contacts to n-AlGaN/GaN
J. Vac. Sci. Technol. A 20, 1004–1010 (2002)
https://doi.org/10.1116/1.1472428
Determination of structural parameters in heterojunction bipolar transistors by x-ray diffraction with (002) reflection
J. Vac. Sci. Technol. A 20, 1011–1014 (2002)
https://doi.org/10.1116/1.1467356
Atomic force microscopy study of the early stages of Sn phase separation on Si(111) surfaces
J. Vac. Sci. Technol. A 20, 1023–1026 (2002)
https://doi.org/10.1116/1.1463081
TRANSISTORS AND CIRCUITS
Design of high speed Si/SiGe heterojunction complementary metal–oxide–semiconductor field effect transistors with reduced short-channel effects
J. Vac. Sci. Technol. A 20, 1030–1033 (2002)
https://doi.org/10.1116/1.1474422
Modeling of the static and dynamic behavior of hydrogenated amorphous silicon thin-film transistors
J. Vac. Sci. Technol. A 20, 1038–1042 (2002)
https://doi.org/10.1116/1.1472427
Extended radio frequency nonlinear model for power prediction of AlGaAs/InGaAs pseudomorphic high electron mobility transistors
J. Vac. Sci. Technol. A 20, 1048–1051 (2002)
https://doi.org/10.1116/1.1463080
PHOTONICS
Optoelectronic integration using aligned metal-to-semiconductor bonding
J. Vac. Sci. Technol. A 20, 1052–1056 (2002)
https://doi.org/10.1116/1.1464838
Ultrafast high-field carrier transport in a GaAs photoconductive switch
J. Vac. Sci. Technol. A 20, 1057–1060 (2002)
https://doi.org/10.1116/1.1468653
On the optimum design of the front-end PIN-heterojunction bipolar transistor optoelectronic integrated circuit photoreceiver
J. Vac. Sci. Technol. A 20, 1067–1071 (2002)
https://doi.org/10.1116/1.1472424
Patterning of wave guides in using ion beam etching and reactive ion beam etching
J. Vac. Sci. Technol. A 20, 1072–1075 (2002)
https://doi.org/10.1116/1.1472425
Control of dielectric cap induced band-gap shift in 1.55 μm laser structures
J. Vac. Sci. Technol. A 20, 1076–1078 (2002)
https://doi.org/10.1116/1.1463074
Submicron, high speed complementary metal–oxide semiconductor compatible metal–semiconductor–metal photodetector
J. Vac. Sci. Technol. A 20, 1079–1081 (2002)
https://doi.org/10.1116/1.1475981
SENSORS AND DISPLAYS
Sensitivity of x-ray photoconductors: Charge trapping and absorption-limited universal sensitivity curves
J. Vac. Sci. Technol. A 20, 1082–1086 (2002)
https://doi.org/10.1116/1.1460900
Amorphous silicon nitride deposited at 120 °C for organic light emitting display-thin film transistor arrays on plastic substrates
J. Vac. Sci. Technol. A 20, 1087–1090 (2002)
https://doi.org/10.1116/1.1472423
Fabrication of based phosphor films coupled with photodetectors for x-ray imaging applications
J. Vac. Sci. Technol. A 20, 1091–1094 (2002)
https://doi.org/10.1116/1.1463082
Active pixel sensor architectures in -SiH for medical imaging
J. Vac. Sci. Technol. A 20, 1095–1099 (2002)
https://doi.org/10.1116/1.1460897
High-temperature gas sensor using perovskite thin films on a suspended microheater
O. Grudin; R. Marinescu; L. M. Landsberger; M. Kahrizi; G. Frolov; J. D. N. Cheeke; S. Chehab; M. Post; J. Tunney; X. Du; D. Yang; D. Segall
J. Vac. Sci. Technol. A 20, 1100–1104 (2002)
https://doi.org/10.1116/1.1463072
EPITAXIAL STRUCTURES
Effect of the interface on the local structure of Ge–Si nanostructures
A. V. Kolobov; H. Oyanagi; K. Brunner; G. Abstreiter; Y. Maeda; A. A. Shklyaev; S. Yamasaki; M. Ichikawa; K. Tanaka
J. Vac. Sci. Technol. A 20, 1116–1119 (2002)
https://doi.org/10.1116/1.1460894
Growth and characterization of ultrahigh vacuum/chemical vapor deposition SiGe epitaxial layers on bulk single-crystal SiGe and Si substrates
J. Vac. Sci. Technol. A 20, 1120–1124 (2002)
https://doi.org/10.1116/1.1464840
Thickness-dependent renormalization of strain effects on self-organized InAs quantum dots grown on GaAs
J. Vac. Sci. Technol. A 20, 1125–1127 (2002)
https://doi.org/10.1116/1.1474416
Growth and coalescence evolution of InAs on GaAs by molecular beam epitaxy
J. Vac. Sci. Technol. A 20, 1128–1131 (2002)
https://doi.org/10.1116/1.1474415
Growth and characterization of InAs on (100) InP ultrathin single quantum wells using tertiarybutylarsine and tertiarybutylphosphine
J. Vac. Sci. Technol. A 20, 1132–1134 (2002)
https://doi.org/10.1116/1.1474412
THIN FILMS
Material properties of ion beam deposited oxides for the optoelectronic industry
Adrian J. Devasahayam; Ivo Agatic; Boris Druz; Hari Hegde; Isaac Zaritsky; Suhit R. Das; Marcel Boudreau; Tao Yin; Robert Mallard; Sylvain LaFramboise
J. Vac. Sci. Technol. A 20, 1135–1140 (2002)
https://doi.org/10.1116/1.1463077
Characterization of gadolinium and lanthanum oxide films on Si (100)
J. Vac. Sci. Technol. A 20, 1141–1144 (2002)
https://doi.org/10.1116/1.1463079
Characterization of thin films deposited using and on Si(100)
J. Vac. Sci. Technol. A 20, 1145–1148 (2002)
https://doi.org/10.1116/1.1467358
Characterization of low permittivity (low-k) polymeric dielectric films for low temperature device integration
J. Vac. Sci. Technol. A 20, 1149–1153 (2002)
https://doi.org/10.1116/1.1463083
Passivation of GaAs metal–insulator–semiconductor structures by and by evaporation of
J. Vac. Sci. Technol. A 20, 1154–1156 (2002)
https://doi.org/10.1116/1.1463078
Reactive pulsed laser deposition of high-k silicon dioxide and silicon oxynitride thin films for gate-dielectric applications
J. Vac. Sci. Technol. A 20, 1157–1161 (2002)
https://doi.org/10.1116/1.1467357
Anomalous effective magnetoconductivity in disordered bipolar semiconductors: Theory and experimental simulation
J. Vac. Sci. Technol. A 20, 1162–1166 (2002)
https://doi.org/10.1116/1.1460899
What more can be done with XPS? Highly informative but underused approaches to XPS data collection and analysis
Donald R. Baer, Merve Taner Camci, et al.
Low-resistivity molybdenum obtained by atomic layer deposition
Kees van der Zouw, Bernhard Y. van der Wel, et al.
Perspective on improving the quality of surface and material data analysis in the scientific literature with a focus on x-ray photoelectron spectroscopy (XPS)
George H. Major, Joshua W. Pinder, et al.