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PAPERS FROM THE 47TH INTERNATIONAL SYMPOSIUM OF THE AVS

BIOMATERIAL INTERFACES

Photovoltaic characteristics of BR/p-silicon heterostructures using surface photovoltage spectroscopy

Lin Song Li; Tao Xu; Yan Jie Zhang; Jian Jin; Tie Jin Li; Bingsuo Zou; Jian-Ping Wang

J. Vac. Sci. Technol. A 19, 1037–1041 (2001) https://doi.org/10.1116/1.1369785

Abstract

View articletitled, Photovoltaic characteristics of BR/p-silicon heterostructures using surface photovoltage spectroscopy

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Observation of the bone matrix structure of intact and regenerative zones of tibias by atomic force microscopy

Vitor Baranauskas; I. Garavello-Freitas; Z. Jingguo; M. A. Cruz-Höfling

J. Vac. Sci. Technol. A 19, 1042–1045 (2001) https://doi.org/10.1116/1.1351798

Abstract

View articletitled, Observation of the bone matrix structure of intact and regenerative zones of tibias by atomic force microscopy

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ELECTRONICS

Structural and electrical characteristics of chemical vapor deposited $W /n- {Si}_{0.83} {Ge}_{0.17} /Si(001)$ and chemical vapor deposited ${WSi}_{x} /n- {Si}_{0.83} {Ge}_{0.17} /Si(001)$

Y. C. Jang; D. O. Shin; K. S. Kim; K.-H. Shim; N.-E. Lee; S. P. Youn; K. J. Roh; Y. H. Roh

J. Vac. Sci. Technol. A 19, 1046–1051 (2001) https://doi.org/10.1116/1.1368665

Abstract

View articletitled, Structural and electrical characteristics of chemical vapor deposited <math xmlns="http://www.w3.org/1998/Math/MathML"><mi mathvariant="normal" xmlns="">W</mi><mi xmlns="">/n-</mi><msub xmlns=""><mi mathvariant="normal">Si</mi><mrow><mi mathvariant="normal">0.83</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ge</mi><mrow><mi mathvariant="normal">0.17</mi></mrow></msub><mi mathvariant="normal" xmlns="">/Si(001)</mi></math> and chemical vapor deposited <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">WSi</mi><mrow><mi>x</mi></mrow></msub><mi xmlns="">/n-</mi><msub xmlns=""><mi mathvariant="normal">Si</mi><mrow><mi mathvariant="normal">0.83</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ge</mi><mrow><mi mathvariant="normal">0.17</mi></mrow></msub><mi mathvariant="normal" xmlns="">/Si(001)</mi></math>

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Fabrication of smooth diamond films on ${SiO}_{2}$ by the addition of nitrogen to the gas feed in hot-filament chemical vapor deposition

Vitor Baranauskas; Alfredo C. Peterlevitz; Zhao Jingguo; Steven F. Durrant

J. Vac. Sci. Technol. A 19, 1052–1056 (2001) https://doi.org/10.1116/1.1340657

Abstract

View articletitled, Fabrication of smooth diamond films on <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SiO</mi><mrow><mn>2</mn></mrow></msub></math> by the addition of nitrogen to the gas feed in hot-filament chemical vapor deposition

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Micro-crystalline diamond and nano-carbon structures produced using a high argon concentration in hot-filament chemical vapor deposition

Vitor Baranauskas; Alfredo C. Peterlevitz; Helder J. Ceragioli; Steven F. Durrant

J. Vac. Sci. Technol. A 19, 1057–1062 (2001) https://doi.org/10.1116/1.1366701

Abstract

View articletitled, Micro-crystalline diamond and nano-carbon structures produced using a high argon concentration in hot-filament chemical vapor deposition

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Damage in etching of ${(Ba, Sr)TiO}_{3}$ thin films using inductively coupled plasma

Sung-Ki Choi; Dong-Pyo Kim; Chang-Il Kim; Eui-Goo Chang

J. Vac. Sci. Technol. A 19, 1063–1067 (2001) https://doi.org/10.1116/1.1380227

Abstract

View articletitled, Damage in etching of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">(Ba, Sr)TiO</mi><mrow><mn>3</mn></mrow></msub></math> thin films using inductively coupled plasma

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Etch characteristics of ${CeO}_{2}$ thin films as a buffer layer for the application of ferroelectric random access memory

Chang-Seok Oh; Chang-Il Kim; Kwang-Ho Kwon

J. Vac. Sci. Technol. A 19, 1068–1071 (2001) https://doi.org/10.1116/1.1376703

Abstract

View articletitled, Etch characteristics of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">CeO</mi><mrow><mn>2</mn></mrow></msub></math> thin films as a buffer layer for the application of ferroelectric random access memory

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Chemical interaction and adhesion characteristics at the interface of metals (Cu, Ta) and low-k cyclohexane-based plasma polymer (CHexPP) films

K. J. Kim; K. S. Kim; N.-E. Lee; J. Choi; D. Jung

J. Vac. Sci. Technol. A 19, 1072–1077 (2001) https://doi.org/10.1116/1.1340658

Abstract

View articletitled, Chemical interaction and adhesion characteristics at the interface of metals (Cu, Ta) and low-k cyclohexane-based plasma polymer (CHexPP) films

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FLAT PANEL DISPLAYS

Low temperature deposition and characterization of polycrystalline Si films on polymer substrates

K. Xu; S. I. Shah; D. Guerin

J. Vac. Sci. Technol. A 19, 1078–1082 (2001) https://doi.org/10.1116/1.1345905

Abstract

View articletitled, Low temperature deposition and characterization of polycrystalline Si films on polymer substrates

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Cross-sectional transmission electron microscopy investigation of the dead layer of ZnS:Ag,Al phosphors in field emission displays

K. Kajiwara

J. Vac. Sci. Technol. A 19, 1083–1089 (2001) https://doi.org/10.1116/1.1381405

Abstract

View articletitled, Cross-sectional transmission electron microscopy investigation of the dead layer of ZnS:Ag,Al phosphors in field emission displays

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Optical filters for plasma display panels using organic dyes and sputtered multilayer coatings

T. Okamura; S. Fukuda; K. Koike; H. Saigou; M. Yoshikai; M. Koyama; T. Misawa; Y. Matsuzaki

J. Vac. Sci. Technol. A 19, 1090–1094 (2001) https://doi.org/10.1116/1.1381402

Abstract

View articletitled, Optical filters for plasma display panels using organic dyes and sputtered multilayer coatings

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Effects of ZnO buffer layer on the luminous properties of thin-film phosphors deposited on ZnO/ITO/glass substrates

Young Jin Kim; Sung Mook Chung; Young Ho Jeong; Yong Eui Lee

J. Vac. Sci. Technol. A 19, 1095–1098 (2001) https://doi.org/10.1116/1.1342871

Abstract

View articletitled, Effects of ZnO buffer layer on the luminous properties of thin-film phosphors deposited on ZnO/ITO/glass substrates

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Investigation of the outgassing characteristics of the materials comprising a plasma display panel

H. R. Han; Y. J. Lee; G. Y. Yeom

J. Vac. Sci. Technol. A 19, 1099–1104 (2001) https://doi.org/10.1116/1.1369788

Abstract

View articletitled, Investigation of the outgassing characteristics of the materials comprising a plasma display panel

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INDUSTRIAL ECOLOGY

In situ analysis of perfluoro compounds in semiconductor process exhaust: Use of ${Li}^{+}$ ion-attachment mass spectrometry

M. Nakamura; K. Hino; T. Sasaki; Y. Shiokawa; T. Fujii

J. Vac. Sci. Technol. A 19, 1105–1110 (2001) https://doi.org/10.1116/1.1376704

Abstract

View articletitled, In situ analysis of perfluoro compounds in semiconductor process exhaust: Use of <math xmlns="http://www.w3.org/1998/Math/MathML"><msup xmlns=""><mi mathvariant="normal">Li</mi><mrow><mi>+</mi></mrow></msup></math> ion-attachment mass spectrometry

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MATERIAL CHARACTERIZATION

Quantitative comparison between Auger electron spectroscopy and secondary ion mass spectroscopy depth profiles of a double layer structure of AlAs in GaAs using the mixing-roughness-information depth model

S. Hofmann; A. Rar; D. W. Moon; K. Yoshihara

J. Vac. Sci. Technol. A 19, 1111–1115 (2001) https://doi.org/10.1116/1.1345899

Abstract

View articletitled, Quantitative comparison between Auger electron spectroscopy and secondary ion mass spectroscopy depth profiles of a double layer structure of AlAs in GaAs using the mixing-roughness-information depth model

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Surface characterization of IM7/5260 composites by x-ray photoelectron spectroscopy

Satomi Ohno; Moon-Hwan Lee; Kuen Y. Lin; Fumio S. Ohuchi

J. Vac. Sci. Technol. A 19, 1116–1120 (2001) https://doi.org/10.1116/1.1361036

Abstract

View articletitled, Surface characterization of IM7/5260 composites by x-ray photoelectron spectroscopy

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Pt–metal oxide aerogel catalysts: X-ray photoemission investigation

A. J. Nelson; John G. Reynolds; R. D. Sanner; P. R. Coronado; L. M. Hair

J. Vac. Sci. Technol. A 19, 1121–1125 (2001) https://doi.org/10.1116/1.1380716

Abstract

View articletitled, Pt–metal oxide aerogel catalysts: X-ray photoemission investigation

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Scanning Auger microscopy studies of an ancient bronze

E. Paparazzo; A. S. Lea; D. R. Baer; J. P. Northover

J. Vac. Sci. Technol. A 19, 1126–1133 (2001) https://doi.org/10.1116/1.1349191

Abstract

View articletitled, Scanning Auger microscopy studies of an ancient bronze

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Comparative ion yields by secondary ion mass spectrometry from microelectronic films

Christopher C. Parks

J. Vac. Sci. Technol. A 19, 1134–1138 (2001) https://doi.org/10.1116/1.1361037

Abstract

View articletitled, Comparative ion yields by secondary ion mass spectrometry from microelectronic films

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Surface potential measurement with high spatial resolution using a scanning Auger electron microscope

Y. Sakai; M. Kudo; C. Nielsen

J. Vac. Sci. Technol. A 19, 1139–1142 (2001) https://doi.org/10.1116/1.1359551

Abstract

View articletitled, Surface potential measurement with high spatial resolution using a scanning Auger electron microscope

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Chemical effects on F KLL Auger spectra in fluorides

L. Kövér; M. Uda; I. Cserny; J. Tóth; J. Végh; D. Varga; K. Ogasawara; H. Adachi

J. Vac. Sci. Technol. A 19, 1143–1149 (2001) https://doi.org/10.1116/1.1380232

Abstract

View articletitled, Chemical effects on F KLL Auger spectra in fluorides

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X-ray photoelectron spectroscopy, x-ray absorption spectroscopy, and x-ray diffraction characterization of $CuO - {TiO}_{2} - {CeO}_{2}$ catalyst system

M. S. P. Francisco; P. A. P. Nascente; V. R. Mastelaro; A. O. Florentino

J. Vac. Sci. Technol. A 19, 1150–1157 (2001) https://doi.org/10.1116/1.1345911

Abstract

View articletitled, X-ray photoelectron spectroscopy, x-ray absorption spectroscopy, and x-ray diffraction characterization of <math xmlns="http://www.w3.org/1998/Math/MathML"><mi mathvariant="normal" xmlns="">CuO</mi><mi xmlns="">–</mi><msub xmlns=""><mi mathvariant="normal">TiO</mi><mrow><mn>2</mn></mrow></msub><mi xmlns="">–</mi><msub xmlns=""><mi mathvariant="normal">CeO</mi><mrow><mn>2</mn></mrow></msub></math> catalyst system

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Chemical and structural characterization of $V_{2} O_{5} {/TiO}_{2}$ catalysts

C. B. Rodella; P. A. P. Nascente; V. R. Mastelaro; M. R. Zucchi; R. W. A. Franco; C. J. Magon; P. Donoso; A. O. Florentino

J. Vac. Sci. Technol. A 19, 1158–1163 (2001) https://doi.org/10.1116/1.1380720

Abstract

View articletitled, Chemical and structural characterization of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">V</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mi mathvariant="normal">5</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">/TiO</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math> catalysts

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Interface formation and electrical properties of a ${TiN}_{x} / {SiO}_{2} / Si$ structure for application in gate electrodes

K. S. Kim; Y. C. Jang; K. J. Kim; N.-E. Lee; S. P. Youn; K. J. Roh; Y. H. Roh

J. Vac. Sci. Technol. A 19, 1164–1169 (2001) https://doi.org/10.1116/1.1345894

Abstract

View articletitled, Interface formation and electrical properties of a <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">TiN</mi><mrow><mi>x</mi></mrow></msub><mi xmlns="">/</mi><msub xmlns=""><mi mathvariant="normal">SiO</mi><mrow><mn>2</mn></mrow></msub><mi xmlns="">/</mi><mi mathvariant="normal" xmlns="">Si</mi></math> structure for application in gate electrodes

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Interpretation of the Shirley background in x-ray photoelectron spectroscopy analysis

J. E. Castle; A. M. Salvi

J. Vac. Sci. Technol. A 19, 1170–1175 (2001) https://doi.org/10.1116/1.1378074

Abstract

View articletitled, Interpretation of the Shirley background in x-ray photoelectron spectroscopy analysis

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Formation of potentially protective oxide-free phosphate films on titanium characterized by valence band x-ray photoelectron spectroscopy

John A. Rotole; Karen Gaskell; Alex Comte; Peter M. A. Sherwood

J. Vac. Sci. Technol. A 19, 1176–1181 (2001) https://doi.org/10.1116/1.1353540

Abstract

View articletitled, Formation of potentially protective oxide-free phosphate films on titanium characterized by valence band x-ray photoelectron spectroscopy

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MAGNETIC INTERFACES AND NANOSTRUCTURES

Growth and magnetic properties of ultrathin Fe on Pd(110)

Beatriz Roldan Cuenya; J. Pearson; Chengtao Yu; Dongqi Li; S. D. Bader

J. Vac. Sci. Technol. A 19, 1182–1185 (2001) https://doi.org/10.1116/1.1345912

Abstract

View articletitled, Growth and magnetic properties of ultrathin Fe on Pd(110)

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Effect of composition and microstructure on temperature coefficient of resistance of polycrystalline ${La}_{1−x} {Ca}_{x} {MnO}_{3}$ thin films

Chih-Huang Lai; C. F. Hsu; Y. C. Chin; Chengder Chiang

J. Vac. Sci. Technol. A 19, 1186–1190 (2001) https://doi.org/10.1116/1.1351801

Abstract

View articletitled, Effect of composition and microstructure on temperature coefficient of resistance of polycrystalline <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">La</mi><mrow><mtext>1−x</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ca</mi><mrow><mi>x</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">MnO</mi><mrow><mn>3</mn></mrow></msub></math> thin films

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Preparation of cross-sectional transmission electron microscopy specimens of obliquely deposited magnetic thin films on a flexible tape

Enrico G. Keim; Martin D. Bijker; J. Cock Lodder

J. Vac. Sci. Technol. A 19, 1191–1194 (2001) https://doi.org/10.1116/1.1330259

Abstract

View articletitled, Preparation of cross-sectional transmission electron microscopy specimens of obliquely deposited magnetic thin films on a flexible tape

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Determination of magnetostriction for spin-valve devices with 5.0 and 10.0 nm Permalloy layers

T. J. Gafron; S. E. Russek; S. L. Burkett

J. Vac. Sci. Technol. A 19, 1195–1198 (2001) https://doi.org/10.1116/1.1345904

Abstract

View articletitled, Determination of magnetostriction for spin-valve devices with 5.0 and 10.0 nm Permalloy layers

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Analysis of tunneling magnetoresistance test structures by low energy electron nanoscale-luminescence spectroscopy

S. H. Goss; S. S. P. Parkin; L. J. Brillson

J. Vac. Sci. Technol. A 19, 1199–1202 (2001) https://doi.org/10.1116/1.1351797

Abstract

View articletitled, Analysis of tunneling magnetoresistance test structures by low energy electron nanoscale-luminescence spectroscopy

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Corrosion behavior of Co–Sm based magnetic media

Iulica Zana; Giovanni Zangari

J. Vac. Sci. Technol. A 19, 1203–1206 (2001) https://doi.org/10.1116/1.1365128

Abstract

View articletitled, Corrosion behavior of Co–Sm based magnetic media

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Surface processing with gas-cluster ions to improve giant magnetoresistance films

D. B. Fenner; J. Hautala; L. P. Allen; T. G. Tetreault; A. Al-Jibouri; J. I. Budnick; K. S. Jones

J. Vac. Sci. Technol. A 19, 1207–1212 (2001) https://doi.org/10.1116/1.1349193

Abstract

View articletitled, Surface processing with gas-cluster ions to improve giant magnetoresistance films

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Study of exchange anisotropy for ${Ni}_{80} {Fe}_{20} / {Fe}_{60} {Mn}_{40}$ (111) epitaxial films

Congxiao Liu; Jianhua Du; J. A. Barnard; G. J. Mankey

J. Vac. Sci. Technol. A 19, 1213–1218 (2001) https://doi.org/10.1116/1.1340660

Abstract

View articletitled, Study of exchange anisotropy for <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Ni</mi><mrow><mn>80</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">Fe</mi><mrow><mn>20</mn></mrow></msub><mi xmlns="">/</mi><msub xmlns=""><mi mathvariant="normal">Fe</mi><mrow><mn>60</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">Mn</mi><mrow><mn>40</mn></mrow></msub></math> (111) epitaxial films

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MICRO-ELECTRO-MECHANICAL SYSTEMS

Micro-electro-mechanical system fabrication technology applied to large area x-ray image sensor arrays

J. H. Daniel; B. Krusor; R. B. Apte; M. Mulato; K. Van Schuylenbergh; R. Lau; T. Do; R. A. Street; A. Goredema; D. C. Boils-Boissier; P. M. Kazmaier

J. Vac. Sci. Technol. A 19, 1219–1223 (2001) https://doi.org/10.1116/1.1380226

Abstract

View articletitled, Micro-electro-mechanical system fabrication technology applied to large area x-ray image sensor arrays

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A novel antistiction method using harmonic excitation on the microstructure

Wen Pin Lai; Weileun Fang

J. Vac. Sci. Technol. A 19, 1224–1228 (2001) https://doi.org/10.1116/1.1353542

Abstract

View articletitled, A novel antistiction method using harmonic excitation on the microstructure

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Nano- and microchannel fabrication using column/void network deposited silicon

Wook Jun Nam; Sanghoon Bae; A. Kaan Kalkan; Stephen J. Fonash

J. Vac. Sci. Technol. A 19, 1229–1233 (2001) https://doi.org/10.1116/1.1365129

Abstract

View articletitled, Nano- and microchannel fabrication using column/void network deposited silicon

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Investigation of the adhesion, friction, and wear properties of biphenyl thiol self-assembled monolayers by atomic force microscopy

Huiwen Liu; Bharat Bhushan; Wolfgang Eck; Volker Stadler

J. Vac. Sci. Technol. A 19, 1234–1240 (2001) https://doi.org/10.1116/1.1353538

Abstract

View articletitled, Investigation of the adhesion, friction, and wear properties of biphenyl thiol self-assembled monolayers by atomic force microscopy

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MANUFACTURING SCIENCE AND TECHNOLOGY

Data requirements and communication issues for advanced process control

Richard J. Markle; Elfido Coss, Jr.

J. Vac. Sci. Technol. A 19, 1241–1247 (2001) https://doi.org/10.1116/1.1380225

Abstract

View articletitled, Data requirements and communication issues for advanced process control

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The application of in situ monitor of extremely rarefied particle clouds grown thermally above wafers by using laser light scattering method to the development of the mass-production condition of the tungsten thermal chemical vapor deposition

Natsuko Ito; Tsuyoshi Moriya; Fumihiko Uesugi; Shuji Moriya; Masaru Aomori; Yoshinori Kato; Mitsuhiro Tachibana

J. Vac. Sci. Technol. A 19, 1248–1254 (2001) https://doi.org/10.1116/1.1365127

Abstract

View articletitled, The application of in situ monitor of extremely rarefied particle clouds grown thermally above wafers by using laser light scattering method to the development of the mass-production condition of the tungsten thermal chemical vapor deposition

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Study on temperature calibration of a silicon substrate in a temperature programmed desorption analysis

N. Hirashita; T. Jimbo; T. Matsunaga; M. Matsuura; M. Morita; I. Nishiyama; M. Nishizuka; H. Okumura; A. Shimazaki; N. Yabumoto

J. Vac. Sci. Technol. A 19, 1255–1260 (2001) https://doi.org/10.1116/1.1380231

Abstract

View articletitled, Study on temperature calibration of a silicon substrate in a temperature programmed desorption analysis

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ORGANIC FILMS AND DEVICES

Friction force microscopy study on photodegradation of organosilane self-assembled monolayers irradiated with a vacuum ultraviolet light at 172 nm

Hiroyuki Sugimura; Kazuyuki Hayashi; Yukihiro Amano; Osamu Takai; Atsushi Hozumi

J. Vac. Sci. Technol. A 19, 1261–1265 (2001) https://doi.org/10.1116/1.1339023

Abstract

View articletitled, Friction force microscopy study on photodegradation of organosilane self-assembled monolayers irradiated with a vacuum ultraviolet light at 172 nm

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Monolayer formation of 6-deoxy-6-thiol-β-cyclodextrin on a Au(111) surface studied by scanning tunneling microscopy

Satoshi Yasuda; Don Norimi Futaba; Osamu Takeuchi; Iwao Suzuki; Kiyoshi Yase; Jun Sumaoka; Makoto Komiyama; Hidemi Shigekawa

J. Vac. Sci. Technol. A 19, 1266–1269 (2001) https://doi.org/10.1116/1.1372906

Abstract

View articletitled, Monolayer formation of 6-deoxy-6-thiol-β-cyclodextrin on a Au(111) surface studied by scanning tunneling microscopy

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Investigation of the morphology of the initial growth of the aromatic molecule p-quaterphenyl on NaCl (001)

E. J. Kintzel, Jr.; D.-M. Smilgies; J. G. Skofronick; S. A. Safron; D. H. Van Winkle; T. W. Trelenberg; E. A. Akhadov; F. A. Flaherty

J. Vac. Sci. Technol. A 19, 1270–1276 (2001) https://doi.org/10.1116/1.1372917

Abstract

View articletitled, Investigation of the morphology of the initial growth of the aromatic molecule p-quaterphenyl on NaCl (001)

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PHOTONICS

Effect of dry etching conditions on surface morphology and optical properties of GaN films in chlorine-based inductively coupled plasmas

Y. B. Hahn; Y. H. Im; J. S. Park; K. S. Nahm; Y. S. Lee

J. Vac. Sci. Technol. A 19, 1277–1281 (2001) https://doi.org/10.1116/1.1336830

Abstract

View articletitled, Effect of dry etching conditions on surface morphology and optical properties of GaN films in chlorine-based inductively coupled plasmas

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PLASMA SCIENCE AND TECHNOLOGY

Observation of surface reaction layers formed in highly selective ${SiO}_{2}$ etching

Miyako Matsui; Tetsuya Tatsumi; Makoto Sekine

J. Vac. Sci. Technol. A 19, 1282–1288 (2001) https://doi.org/10.1116/1.1383064

Abstract

View articletitled, Observation of surface reaction layers formed in highly selective <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SiO</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math> etching

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Etching mechanism of ${YMnO}_{3}$ thin films in ${Cl}_{2} / Ar$ gas chemistries

Byung-Jun Min; Chang-Il Kim; Yong-Tae Kim

J. Vac. Sci. Technol. A 19, 1289–1293 (2001) https://doi.org/10.1116/1.1368663

Abstract

View articletitled, Etching mechanism of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">YMnO</mi><mrow><mn>3</mn></mrow></msub></math> thin films in <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Cl</mi><mrow><mn>2</mn></mrow></msub><mi xmlns="">/</mi><mi mathvariant="normal" xmlns="">Ar</mi></math> gas chemistries

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Ion compositions and energies in inductively coupled plasmas containing ${SF}_{6}$

A. N. Goyette; Yicheng Wang; J. K. Olthoff

J. Vac. Sci. Technol. A 19, 1294–1297 (2001) https://doi.org/10.1116/1.1330261

Abstract

View articletitled, Ion compositions and energies in inductively coupled plasmas containing <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SF</mi><mrow><mn>6</mn></mrow></msub></math>

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Ion energy and angular distribution at the radio frequency biased electrode in an inductively coupled plasma apparatus

Naoki Mizutani; Toshio Hayashi

J. Vac. Sci. Technol. A 19, 1298–1303 (2001) https://doi.org/10.1116/1.1381404

Abstract

View articletitled, Ion energy and angular distribution at the radio frequency biased electrode in an inductively coupled plasma apparatus

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Spatial distribution of carbon species in laser ablation of graphite target

T. Ikegami; S. Ishibashi; Y. Yamagata; K. Ebihara; R. K. Thareja; J. Narayan

J. Vac. Sci. Technol. A 19, 1304–1307 (2001) https://doi.org/10.1116/1.1381403

Abstract

View articletitled, Spatial distribution of carbon species in laser ablation of graphite target

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Improved etch characteristics of ${SiO}_{2}$ by the enhanced inductively coupled plasma

S.-B. Cho; H.-Y. Song; S.-G. Park; B.-H. O

J. Vac. Sci. Technol. A 19, 1308–1311 (2001) https://doi.org/10.1116/1.1353537

Abstract

View articletitled, Improved etch characteristics of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SiO</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math> by the enhanced inductively coupled plasma

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Effect of temperature on etch rate of iridium and platinum in ${CF}_{4} / O_{2}$

Jer-shen Maa; Hong Ying; Fengyan Zhang

J. Vac. Sci. Technol. A 19, 1312–1314 (2001) https://doi.org/10.1116/1.1353541

Abstract

View articletitled, Effect of temperature on etch rate of iridium and platinum in <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">CF</mi><mrow><mn>4</mn></mrow></msub><mi xmlns="">/</mi><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mn>2</mn></mrow></msub></math>

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Dry etching of ${SrBi}_{2} {Ta}_{2} O_{9}$ thin films in ${Cl}_{2} / {NF}_{3} / O_{2} / Ar$ inductively coupled plasmas

Y. H. Im; J. S. Park; C. S. Choi; R. J. Choi; Y. B. Hahn; S.-H. Lee; J.-K. Lee

J. Vac. Sci. Technol. A 19, 1315–1319 (2001) https://doi.org/10.1116/1.1351800

Abstract

View articletitled, Dry etching of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SrBi</mi><mrow><mn>2</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ta</mi><mrow><mn>2</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mn>9</mn></mrow></msub></math> thin films in <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Cl</mi><mrow><mn>2</mn></mrow></msub><mi xmlns="">/</mi><msub xmlns=""><mi mathvariant="normal">NF</mi><mrow><mn>3</mn></mrow></msub><mi xmlns="">/</mi><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mn>2</mn></mrow></msub><mi xmlns="">/</mi><mi mathvariant="normal" xmlns="">Ar</mi></math> inductively coupled plasmas

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Structure control of pulsed laser deposited ${ZrO}_{2} {/Y}_{2} O_{3}$ films

A. A. Voevodin; J. G. Jones; J. S. Zabinski

J. Vac. Sci. Technol. A 19, 1320–1324 (2001) https://doi.org/10.1116/1.1355360

Abstract

View articletitled, Structure control of pulsed laser deposited <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">ZrO</mi><mrow><mn>2</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">/Y</mi><mrow><mn>2</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mn>3</mn></mrow></msub></math> films

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Ion energy distributions in a pulsed, electron beam-generated plasma

S. G. Walton; D. Leonhardt; D. D. Blackwell; R. F. Fernsler; D. P. Murphy; R. A. Meger

J. Vac. Sci. Technol. A 19, 1325–1329 (2001) https://doi.org/10.1116/1.1345901

Abstract

View articletitled, Ion energy distributions in a pulsed, electron beam-generated plasma

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Probe diagnostic development for electron beam produced plasmas

D. D. Blackwell; S. G. Walton; D. Leonhardt; D. P. Murphy; R. F. Fernsler; W. E. Amatucci; R. A. Meger

J. Vac. Sci. Technol. A 19, 1330–1335 (2001) https://doi.org/10.1116/1.1366699

Abstract

View articletitled, Probe diagnostic development for electron beam produced plasmas

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Ion-assisted deposition of silicon nitride films using electron cyclotron resonance plasma

K. Deenamma Vargheese; G. Mohan Rao

J. Vac. Sci. Technol. A 19, 1336–1340 (2001) https://doi.org/10.1116/1.1371323

Abstract

View articletitled, Ion-assisted deposition of silicon nitride films using electron cyclotron resonance plasma

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Plasma etching of lead germanate (PGO) ferroelectric thin film

Hong Ying; Tingkai Li; Jer-shen Maa; Fengyan Zhang; Sheng Teng Hsu; Yufei Gao; Mark Engelhard

J. Vac. Sci. Technol. A 19, 1341–1345 (2001) https://doi.org/10.1116/1.1355363

Abstract

View articletitled, Plasma etching of lead germanate (PGO) ferroelectric thin film

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Simulation of the production of atomic hydrogen in a low-pressure-arc-discharge-based source

V. A. Kagadei; A. V. Kozyrev; D. I. Proskurovsky; I. V. Osipov

J. Vac. Sci. Technol. A 19, 1346–1352 (2001) https://doi.org/10.1116/1.1349724

Abstract

View articletitled, Simulation of the production of atomic hydrogen in a low-pressure-arc-discharge-based source

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Physical and electrical properties of noncrystalline ${Al}_{2} O_{3}$ prepared by remote plasma enhanced chemical vapor deposition

Robert S. Johnson; Gerald Lucovsky; Isreal Baumvol

J. Vac. Sci. Technol. A 19, 1353–1360 (2001) https://doi.org/10.1116/1.1379316

Abstract

View articletitled, Physical and electrical properties of noncrystalline <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Al</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub></math> prepared by remote plasma enhanced chemical vapor deposition

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Etching of high-k dielectric ${Zr}_{1−x} {Al}_{x} O_{y}$ films in chlorine-containing plasmas

K. Pelhos; V. M. Donnelly; A. Kornblit; M. L. Green; R. B. Van Dover; L. Manchanda; Y. Hu; M. Morris; E. Bower

J. Vac. Sci. Technol. A 19, 1361–1366 (2001) https://doi.org/10.1116/1.1349721

Abstract

View articletitled, Etching of high-k dielectric <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Zr</mi><mrow><mtext>1−x</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Al</mi><mrow><mi>x</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mi>y</mi></mrow></msub></math> films in chlorine-containing plasmas

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PLASMA SCIENCE AND TECHNOLOGY I

Plasma diagnostics in large area plasma processing system

D. Leonhardt; S. G. Walton; D. D. Blackwell; W. E. Amatucci; D. P. Murphy; R. F. Fernsler; R. A. Meger

J. Vac. Sci. Technol. A 19, 1367–1373 (2001) https://doi.org/10.1116/1.1359554

Abstract

View articletitled, Plasma diagnostics in large area plasma processing system

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Relationship between deprotection and film thickness loss during plasma etching of positive tone chemically amplified resists

A. P. Mahorowala; D. R. Medeiros

J. Vac. Sci. Technol. A 19, 1374–1378 (2001) https://doi.org/10.1116/1.1372909

Abstract

View articletitled, Relationship between deprotection and film thickness loss during plasma etching of positive tone chemically amplified resists

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Novel technique to enhance etch selectivity of carbon antireflective coating over photoresist based on $O_{2} / {CHF}_{3} / Ar$ gas chemistry

J. Hong; J. S. Jeon; Y. B. Kim; G. J. Min; T. H. Ahn

J. Vac. Sci. Technol. A 19, 1379–1383 (2001) https://doi.org/10.1116/1.1345900

Abstract

View articletitled, Novel technique to enhance etch selectivity of carbon antireflective coating over photoresist based on <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mn>2</mn></mrow></msub><mi xmlns="">/</mi><msub xmlns=""><mi mathvariant="normal">CHF</mi><mrow><mn>3</mn></mrow></msub><mi xmlns="">/</mi><mi mathvariant="normal" xmlns="">Ar</mi></math> gas chemistry

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PLASMA SCIENCE AND TECHNOLOGY II

Understanding the evolution of trench profiles in the via-first dual damascene integration scheme

Tom Kropewnicki; Kenny Doan; Betty Tang; Claes Björkman

J. Vac. Sci. Technol. A 19, 1384–1387 (2001) https://doi.org/10.1116/1.1345897

Abstract

View articletitled, Understanding the evolution of trench profiles in the via-first dual damascene integration scheme

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Trench etch processes for dual damascene patterning of low- $k$ dielectrics

P. Jiang; F. G. Celii; W. W. Dostalik; K. J. Newton; H. Sakima

J. Vac. Sci. Technol. A 19, 1388–1391 (2001) https://doi.org/10.1116/1.1380717

Abstract

View articletitled, Trench etch processes for dual damascene patterning of low-<math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">k</mi></math> dielectrics

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SURFACE ENGINEERING

Influence of the interface composition on the corrosion behavior of unbalanced magnetron grown niobium coatings on steel

C. Schönjahn; H. Paritong; W.-D Münz; R. D. Twesten; I. Petrov

J. Vac. Sci. Technol. A 19, 1392–1398 (2001) https://doi.org/10.1116/1.1379319

Abstract

View articletitled, Influence of the interface composition on the corrosion behavior of unbalanced magnetron grown niobium coatings on steel

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Tribological performance of a novel high wear resistant high Si Al–Si alloy weld overlay

R. D. Ott; C. A. Blue; M. L. Santella; P. J. Blau

J. Vac. Sci. Technol. A 19, 1399–1403 (2001) https://doi.org/10.1116/1.1339021

Abstract

View articletitled, Tribological performance of a novel high wear resistant high Si Al–Si alloy weld overlay

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Interface engineering and graded films: Structure and characterization

S. J. Bull

J. Vac. Sci. Technol. A 19, 1404–1414 (2001) https://doi.org/10.1116/1.1355359

Abstract

View articletitled, Interface engineering and graded films: Structure and characterization

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Optimization of in situ substrate surface treatment in a cathodic arc plasma: A study by TEM and plasma diagnostics

C. Schönjahn; A. P. Ehiasarian; D. B. Lewis; R. New; W.-D. Münz; R. D. Twesten; I. Petrov

J. Vac. Sci. Technol. A 19, 1415–1420 (2001) https://doi.org/10.1116/1.1349726

Abstract

View articletitled, Optimization of in situ substrate surface treatment in a cathodic arc plasma: A study by TEM and plasma diagnostics

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Laterally graded multilayers and their applications

Chian Liu; A. Macrander; J. Als-Nielsen; K. Zhang

J. Vac. Sci. Technol. A 19, 1421–1424 (2001) https://doi.org/10.1116/1.1353536

Abstract

View articletitled, Laterally graded multilayers and their applications

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Enhanced passivity of austenitic AISI 304 stainless steel by low-temperature ion nitriding

S. Rudenja; J. Pan; I. Odnevall Wallinder; C. Leygraf; P. Kulu; V. Mikli

J. Vac. Sci. Technol. A 19, 1425–1431 (2001) https://doi.org/10.1116/1.1380229

Abstract

View articletitled, Enhanced passivity of austenitic AISI 304 stainless steel by low-temperature ion nitriding

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General rule for predicting surface segregation of substrate metal on film surface

Michiko Yoshitake; Yarrama-Reddy Aparna; Kazuhiro Yoshihara

J. Vac. Sci. Technol. A 19, 1432–1437 (2001) https://doi.org/10.1116/1.1376699

Abstract

View articletitled, General rule for predicting surface segregation of substrate metal on film surface

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High rate sputtering for Ni films by an rf-dc coupled magnetron sputtering system with multipolar magnetic plasma confinement

K. Kawabata; T. Tanaka; A. Kitabatake; K. Yamada; Y. Mikami; H. Kajioka; K. Toiyama

J. Vac. Sci. Technol. A 19, 1438–1441 (2001) https://doi.org/10.1116/1.1351796

Abstract

View articletitled, High rate sputtering for Ni films by an rf-dc coupled magnetron sputtering system with multipolar magnetic plasma confinement

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Corrosion resistance of chromium nitride on low alloy steels by cathodic arc deposition

S. Han; J. H. Lin; D. Y. Wang; F.-H. Lu; H. C. Shih

J. Vac. Sci. Technol. A 19, 1442–1446 (2001) https://doi.org/10.1116/1.1361038

Abstract

View articletitled, Corrosion resistance of chromium nitride on low alloy steels by cathodic arc deposition

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SURFACE SCIENCE

Electrochemical characterization and surface analysis of bulk amorphous alloys in aqueous solutions at different $p H$

R. Schennach; T. Grady; D. G. Naugle; H. McWhinney; C. C. Hays; W. L. Johnson; D. L. Cocke

J. Vac. Sci. Technol. A 19, 1447–1453 (2001) https://doi.org/10.1116/1.1380719

Abstract

View articletitled, Electrochemical characterization and surface analysis of bulk amorphous alloys in aqueous solutions at different <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">p</mi><mi mathvariant="normal" xmlns="">H</mi></math>

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Tribocharging in electrostatic beneficiation of coal: Effects of surface composition on work function as measured by x-ray photoelectron spectroscopy and ultraviolet photoelectron spectroscopy in air

S. Trigwell; M. K. Mazumder; R. Pellissier

J. Vac. Sci. Technol. A 19, 1454–1459 (2001) https://doi.org/10.1116/1.1379320

Abstract

View articletitled, Tribocharging in electrostatic beneficiation of coal: Effects of surface composition on work function as measured by x-ray photoelectron spectroscopy and ultraviolet photoelectron spectroscopy in air

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Study of high- and low-work-function surfaces for hyperthermal surface ionization using an absolute Kelvin probe

I. D. Baikie; U. Peterman; B. Lägel; K. Dirscherl

J. Vac. Sci. Technol. A 19, 1460–1466 (2001) https://doi.org/10.1116/1.1376701

Abstract

View articletitled, Study of high- and low-work-function surfaces for hyperthermal surface ionization using an absolute Kelvin probe

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Oxygen loss and recovering induced by ultrahigh vacuum and oxygen annealing on ${WO}_{3}$ thin film surfaces: Influences on the gas response properties

S. Santucci; L. Lozzi; E. Maccallini; M. Passacantando; L. Ottaviano; C. Cantalini

J. Vac. Sci. Technol. A 19, 1467–1473 (2001) https://doi.org/10.1116/1.1349190

Abstract

View articletitled, Oxygen loss and recovering induced by ultrahigh vacuum and oxygen annealing on <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">WO</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub></math> thin film surfaces: Influences on the gas response properties

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Adsorption, decomposition, and stabilization of 1,2-dibromoethane on Cu(111)

Ally S. Y. Chan; Robert G. Jones

J. Vac. Sci. Technol. A 19, 1474–1480 (2001) https://doi.org/10.1116/1.1376702

Abstract

View articletitled, Adsorption, decomposition, and stabilization of 1,2-dibromoethane on Cu(111)

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Resonances in electron-stimulated desorption of Eu atoms

V. N. Ageev; Yu. A. Kuznetsov; T. E. Madey

J. Vac. Sci. Technol. A 19, 1481–1484 (2001) https://doi.org/10.1116/1.1366702

Abstract

View articletitled, Resonances in electron-stimulated desorption of Eu atoms

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Photon-stimulated ion desorption from mono- and multilayered silicon alkoxide on silicon by core-level excitation

Y. Baba; G. Wu; T. Sekiguchi; I. Shimoyama

J. Vac. Sci. Technol. A 19, 1485–1489 (2001) https://doi.org/10.1116/1.1359545

Abstract

View articletitled, Photon-stimulated ion desorption from mono- and multilayered silicon alkoxide on silicon by core-level excitation

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Surface treatment and characterization of PMMA, PHEMA, and PHPMA

Hyuneui Lim; Yeonhee Lee; Seunghee Han; Jeonghee Cho; Kang-Jin Kim

J. Vac. Sci. Technol. A 19, 1490–1496 (2001) https://doi.org/10.1116/1.1382650

Abstract

View articletitled, Surface treatment and characterization of PMMA, PHEMA, and PHPMA

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SURFACE SCIENCE I

Adsorption and reaction of ethene on oxide-supported Pd, Rh, and Ir particles

Martin Frank; Marcus Bäumer; Ralf Kühnemuth; Hans-Joachim Freund

J. Vac. Sci. Technol. A 19, 1497–1501 (2001) https://doi.org/10.1116/1.1336828

Abstract

View articletitled, Adsorption and reaction of ethene on oxide-supported Pd, Rh, and Ir particles

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Effect of surface treatment on the $γ- {WO}_{3} (001)$ surface: A comprehensive study of oxidation and reduction by scanning tunneling microscopy and low-energy electron diffraction

Robert E. Tanner; Eric I. Altman

J. Vac. Sci. Technol. A 19, 1502–1509 (2001) https://doi.org/10.1116/1.1359550

Abstract

View articletitled, Effect of surface treatment on the <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">γ-</mi><msub xmlns=""><mi mathvariant="normal">WO</mi><mrow><mn>3</mn></mrow></msub><mtext xmlns="">(001)</mtext></math> surface: A comprehensive study of oxidation and reduction by scanning tunneling microscopy and low-energy electron diffraction

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Surface science models for CoMo hydrodesulfurization catalysts: Influence of the support on hydrodesulfurization activity

L. Coulier; G. Kishan; J. A. R. van Veen; J. W. Niemantsverdriet

J. Vac. Sci. Technol. A 19, 1510–1515 (2001) https://doi.org/10.1116/1.1359542

Abstract

View articletitled, Surface science models for CoMo hydrodesulfurization catalysts: Influence of the support on hydrodesulfurization activity

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Reaction kinetics on supported model catalysts: Molecular beam/in situ time-resolved infrared reflection absorption spectroscopy study of the CO oxidation on alumina supported Pd particles

J. Libuda; I. Meusel; J. Hoffmann; J. Hartmann; H.-J. Freund

J. Vac. Sci. Technol. A 19, 1516–1523 (2001) https://doi.org/10.1116/1.1345910

Abstract

View articletitled, Reaction kinetics on supported model catalysts: Molecular beam/in situ time-resolved infrared reflection absorption spectroscopy study of the CO oxidation on alumina supported Pd particles

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Comparison of phosgene formation from adsorption of carbon tetrachloride on oxygen modified Ir(111) and oxygen modified Ir(110)

R. J. Meyer; C. T. Reeves; D. J. Safarik; D. T. Allen; C. B. Mullins

J. Vac. Sci. Technol. A 19, 1524–1530 (2001) https://doi.org/10.1116/1.1366700

Abstract

View articletitled, Comparison of phosgene formation from adsorption of carbon tetrachloride on oxygen modified Ir(111) and oxygen modified Ir(110)

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SURFACE SCIENCE II

Chemistry and aging of organosiloxane and fluorocarbon films grown from hyperthermal polyatomic ions

Luke Hanley; Erick Fuoco; Muthu B. J. Wijesundara; Alison J. Beck; Pat N. Brookes; Robert D. Short

J. Vac. Sci. Technol. A 19, 1531–1536 (2001) https://doi.org/10.1116/1.1349723

Abstract

View articletitled, Chemistry and aging of organosiloxane and fluorocarbon films grown from hyperthermal polyatomic ions

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SURFACE SCIENCE III

Interaction of chlorodifluoromethane with ultrathin solid water films

D. J. Safarik; R. J. Meyer; C. B. Mullins

J. Vac. Sci. Technol. A 19, 1537–1542 (2001) https://doi.org/10.1116/1.1349192

Abstract

View articletitled, Interaction of chlorodifluoromethane with ultrathin solid water films

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Molecular dynamics simulations of the trapping of ethane on $Si (100)-(2×1):$ Effect of rotational energy and surface temperature

C. T. Reeves; J. D. Stiehl; C. B. Mullins; G. O. Sitz

J. Vac. Sci. Technol. A 19, 1543–1548 (2001) https://doi.org/10.1116/1.1366703

Abstract

View articletitled, Molecular dynamics simulations of the trapping of ethane on <math xmlns="http://www.w3.org/1998/Math/MathML"><mi mathvariant="normal" xmlns="">Si</mi><mtext xmlns="">(100)-(2×1):</mtext></math> Effect of rotational energy and surface temperature

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Characteristic structures of the $Si (111)-7×7$ surface step studied by scanning tunneling microscopy

K. Miyake; S. Okawa; O. Takeuchi; D. N. Futaba; K. Hata; R. Morita; M. Yamashita; H. Shigekawa

J. Vac. Sci. Technol. A 19, 1549–1552 (2001) https://doi.org/10.1116/1.1359538

Abstract

View articletitled, Characteristic structures of the <math xmlns="http://www.w3.org/1998/Math/MathML"><mi mathvariant="normal" xmlns="">Si</mi><mtext xmlns="">(111)-7×7</mtext></math> surface step studied by scanning tunneling microscopy

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THIN FILMS

Transition from thermally grown gate dielectrics to deposited gate dielectrics for advanced silicon devices: A classification scheme based on bond ionicity

Gerald Lucovsky

J. Vac. Sci. Technol. A 19, 1553–1561 (2001) https://doi.org/10.1116/1.1379317

Abstract

View articletitled, Transition from thermally grown gate dielectrics to deposited gate dielectrics for advanced silicon devices: A classification scheme based on bond ionicity

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Tungsten silicide for the alternate gate metal in metal-oxide-semiconductor devices

K. Roh; S. Youn; S. Yang; Y. Roh

J. Vac. Sci. Technol. A 19, 1562–1565 (2001) https://doi.org/10.1116/1.1345914

Abstract

View articletitled, Tungsten silicide for the alternate gate metal in metal-oxide-semiconductor devices

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Influence of annealing temperature on simultaneous vapor deposited calcium phosphate thin films

M. Hamdi; A. M. Ektessabi

J. Vac. Sci. Technol. A 19, 1566–1570 (2001) https://doi.org/10.1116/1.1380228

Abstract

View articletitled, Influence of annealing temperature on simultaneous vapor deposited calcium phosphate thin films

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Deposition of electronic quality amorphous silicon, a-Si:H, thin films by a hollow cathode plasma-jet reactive sputtering system

G. Pribil; Z. Hubička; R. J. Soukup; N. J. Ianno

J. Vac. Sci. Technol. A 19, 1571–1576 (2001) https://doi.org/10.1116/1.1359537

Abstract

View articletitled, Deposition of electronic quality amorphous silicon, a-Si:H, thin films by a hollow cathode plasma-jet reactive sputtering system

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Supermagnetron plasma chemical vapor deposition and qualitative analysis of electrically conductive diamond-like amorphous carbon films

Haruhisa Kinoshita; Masahiro Yoshida

J. Vac. Sci. Technol. A 19, 1577–1581 (2001) https://doi.org/10.1116/1.1349720

Abstract

View articletitled, Supermagnetron plasma chemical vapor deposition and qualitative analysis of electrically conductive diamond-like amorphous carbon films

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Energetic oxygen ions in the reactive sputtering of the Zr target in ${Ar+O}_{2}$ atmosphere

Kikuo Tominaga; Takuya Kikuma

J. Vac. Sci. Technol. A 19, 1582–1585 (2001) https://doi.org/10.1116/1.1368664

Abstract

View articletitled, Energetic oxygen ions in the reactive sputtering of the Zr target in <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Ar+O</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math> atmosphere

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Low temperature aluminum nitride deposition on aluminum by rf reactive sputtering

R. N. Tait; A. Mirfazli

J. Vac. Sci. Technol. A 19, 1586–1590 (2001) https://doi.org/10.1116/1.1351804

Abstract

View articletitled, Low temperature aluminum nitride deposition on aluminum by rf reactive sputtering

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Investigation of the W–TiN metal gate for metal–oxide–semiconductor devices

Sunpil Youn; Kwanchong Roh; Sungwoo Yang; Yonghan Roh; Ki-Su Kim; Young-Chul Jang; Nae-Eung Lee

J. Vac. Sci. Technol. A 19, 1591–1594 (2001) https://doi.org/10.1116/1.1345913

Abstract

View articletitled, Investigation of the W–TiN metal gate for metal–oxide–semiconductor devices

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Effect of interlayer on thermal stability of nickel silicide

Jer-shen Maa; Yoshi Ono; Douglas J. Tweet; Fengyan Zhang; Sheng Teng Hsu

J. Vac. Sci. Technol. A 19, 1595–1599 (2001) https://doi.org/10.1116/1.1372916

Abstract

View articletitled, Effect of interlayer on thermal stability of nickel silicide

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Optical and structural properties of sol-gel ${SiO}_{2}$ layers containing cobalt

A. Ramos-Mendoza; H. Tototzintle-Huitle; A. Mendoza-Galván; J. González-Hernández; B. S. Chao

J. Vac. Sci. Technol. A 19, 1600–1605 (2001) https://doi.org/10.1116/1.1369787

Abstract

View articletitled, Optical and structural properties of sol-gel <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SiO</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math> layers containing cobalt

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Deposition and properties of tetrahedral amorphous carbon films prepared on magnetic hard disks

C. Y. Chan; K. H. Lai; M. K. Fung; W. K. Wong; I. Bello; R. F. Huang; C. S. Lee; S. T. Lee; S. P. Wong

J. Vac. Sci. Technol. A 19, 1606–1610 (2001) https://doi.org/10.1116/1.1355365

Abstract

View articletitled, Deposition and properties of tetrahedral amorphous carbon films prepared on magnetic hard disks

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Structural, morphological, and mechanical properties of plasma deposited hydrogenated amorphous carbon thin films: Ar gas dilution effects

L. Valentini; J. M. Kenny; G. Mariotto; P. Tosi; G. Carlotti; G. Socino; L. Lozzi; S. Santucci

J. Vac. Sci. Technol. A 19, 1611–1616 (2001) https://doi.org/10.1116/1.1336829

Abstract

View articletitled, Structural, morphological, and mechanical properties of plasma deposited hydrogenated amorphous carbon thin films: Ar gas dilution effects

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Wet oxidation behaviors of polycrystalline ${Si}_{1−x} {Ge}_{x}$ films

S.-K. Kang; D.-H. Ko; K. C. Lee; T. W. Lee; Y. H. Lee; T. H. Ahn; I. S. Yeo; S. H. Oh; C. G. Park

J. Vac. Sci. Technol. A 19, 1617–1622 (2001) https://doi.org/10.1116/1.1339022

Abstract

View articletitled, Wet oxidation behaviors of polycrystalline <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Si</mi><mrow><mtext>1−x</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ge</mi><mrow><mi>x</mi></mrow></msub></math> films

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Mechanism of the isotermic amorphous-to-crystalline phase transition in Ge:Sb:Te ternary alloys

J. González-Hernández; E. F. Prokhorov; Yu. V. Vorobiev; E. Morales-Sánchez; A. Mendoza-Galván; S. A. Kostylev; Yu. I. Gorobets; V. N. Zakharchenko; R. V. Zakharchenko

J. Vac. Sci. Technol. A 19, 1623–1629 (2001) https://doi.org/10.1116/1.1336832

Abstract

View articletitled, Mechanism of the isotermic amorphous-to-crystalline phase transition in Ge:Sb:Te ternary alloys

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Extension velocities for level set based surface profile evolution

David F. Richards; Max O. Bloomfield; Suchira Sen; Timothy S. Cale

J. Vac. Sci. Technol. A 19, 1630–1635 (2001) https://doi.org/10.1116/1.1380230

Abstract

View articletitled, Extension velocities for level set based surface profile evolution

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Effects of excess oxygen introduced during sputter deposition on carrier mobility in as-deposited and postannealed indium–tin–oxide films

Naoto Kikuchi; Eiji Kusano; Etsuro Kishio; Akira Kinbara; Hidehito Nanto

J. Vac. Sci. Technol. A 19, 1636–1641 (2001) https://doi.org/10.1116/1.1359546

Abstract

View articletitled, Effects of excess oxygen introduced during sputter deposition on carrier mobility in as-deposited and postannealed indium–tin–oxide films

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Preparation and properties of transparent conductive aluminum-doped zinc oxide thin films by sol–gel process

M. J. Alam; D. C. Cameron

J. Vac. Sci. Technol. A 19, 1642–1646 (2001) https://doi.org/10.1116/1.1340659

Abstract

View articletitled, Preparation and properties of transparent conductive aluminum-doped zinc oxide thin films by sol–gel process

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Synthesis and characterization of transparent conducting oxide cobalt–nickel spinel films

Charles F. Windisch, Jr.; Kim F. Ferris; Gregory J. Exarhos

J. Vac. Sci. Technol. A 19, 1647–1651 (2001) https://doi.org/10.1116/1.1351799

Abstract

View articletitled, Synthesis and characterization of transparent conducting oxide cobalt–nickel spinel films

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VACUUM TECHNOLOGY

Measurements of photon stimulated desorption from thick and thin oxide of KEKB collider copper beam chambers and a stainless steel beam chamber

C. L. Foerster; C. Lanni; K. Kanazawa

J. Vac. Sci. Technol. A 19, 1652–1656 (2001) https://doi.org/10.1116/1.1340661

Abstract

View articletitled, Measurements of photon stimulated desorption from thick and thin oxide of KEKB collider copper beam chambers and a stainless steel beam chamber

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Study of the exposure-dose-dependent photon-stimulated-desorption phenomena

G. Y. Hsiung; K. Y. Young; Y. J. Hsu; J. R. Chen

J. Vac. Sci. Technol. A 19, 1657–1661 (2001) https://doi.org/10.1116/1.1376705

Abstract

View articletitled, Study of the exposure-dose-dependent photon-stimulated-desorption phenomena

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Vacuum characteristics of sprayed metal films

Michio Minato; Hideo Iwamoto

J. Vac. Sci. Technol. A 19, 1662–1665 (2001) https://doi.org/10.1116/1.1381401

Abstract

View articletitled, Vacuum characteristics of sprayed metal films

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Edison’s vacuum coating patents

Robert K. Waits

J. Vac. Sci. Technol. A 19, 1666–1673 (2001) https://doi.org/10.1116/1.1326948

Abstract

View articletitled, Edison’s vacuum coating patents

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Method for calculation of gas flow in the whole pressure regime through ducts of any length

R. G. Livesey

J. Vac. Sci. Technol. A 19, 1674–1678 (2001) https://doi.org/10.1116/1.1345895

Abstract

View articletitled, Method for calculation of gas flow in the whole pressure regime through ducts of any length

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Free jets in vacuum technologies

A. K. Rebrov

J. Vac. Sci. Technol. A 19, 1679–1687 (2001) https://doi.org/10.1116/1.1382649

Abstract

View articletitled, Free jets in vacuum technologies

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Development of the quadrupole mass spectrometer with the Bessel–Box type energy analyzer: Function of the energy analyzer in the partial pressure measurements

N. Takahashi; T. Hayashi; H. Akimichi; Y. Tuzi

J. Vac. Sci. Technol. A 19, 1688–1692 (2001) https://doi.org/10.1116/1.1368666

Abstract

View articletitled, Development of the quadrupole mass spectrometer with the Bessel–Box type energy analyzer: Function of the energy analyzer in the partial pressure measurements

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Summary of quick disconnect vacuum flanges

M. Mapes

J. Vac. Sci. Technol. A 19, 1693–1698 (2001) https://doi.org/10.1116/1.1359540

Abstract

View articletitled, Summary of quick disconnect vacuum flanges

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Cornell Electron Storage Ring phase-III interaction region vacuum chamber

Yun He; Yulin Li; Nariman B. Mistry; Shlomo Greenwald

J. Vac. Sci. Technol. A 19, 1699–1703 (2001) https://doi.org/10.1116/1.1345898

Abstract

View articletitled, Cornell Electron Storage Ring phase-III interaction region vacuum chamber

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Rapid cooling dual slot load locks for liquid crystal display

Akihiro Hosokawa; W. Blonigan; S. Kurita

J. Vac. Sci. Technol. A 19, 1704–1707 (2001) https://doi.org/10.1116/1.1351805

Abstract

View articletitled, Rapid cooling dual slot load locks for liquid crystal display

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Design and operation of scroll-type dry primary vacuum pumps

A. Liepert; P. Lessard

J. Vac. Sci. Technol. A 19, 1708–1711 (2001) https://doi.org/10.1116/1.1359543

Abstract

View articletitled, Design and operation of scroll-type dry primary vacuum pumps

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Practical guide to the use of Bayard–Alpert ionization gauges

J. H. Singleton

J. Vac. Sci. Technol. A 19, 1712–1719 (2001) https://doi.org/10.1116/1.1335679

Abstract

View articletitled, Practical guide to the use of Bayard–Alpert ionization gauges

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DIELECTRICS/ELECTRONICS/MANUFACTURING SCIENCE AND TECHNOLOGY

Study of ${ZrO}_{2}$ thin films for gate oxide applications

Seok-Woo Nam; Jung-Ho Yoo; Hae-Young Kim; Sung-Kwan Kang; Dae-Hong Ko; Cheol-Woong Yang; Hoo-Jeong Lee; Mann-Ho Cho; Ja-Hum Ku

J. Vac. Sci. Technol. A 19, 1720–1724 (2001) https://doi.org/10.1116/1.1351802

Abstract

View articletitled, Study of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">ZrO</mi><mrow><mn>2</mn></mrow></msub></math> thin films for gate oxide applications

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Oxidation of H-covered flat and vicinal Si(111)-1×1 surfaces

X. Zhang; Y. J. Chabal; S. B. Christman; E. E. Chaban; E. Garfunkel

J. Vac. Sci. Technol. A 19, 1725–1729 (2001) https://doi.org/10.1116/1.1335680

Abstract

View articletitled, Oxidation of H-covered flat and vicinal Si(111)-1×1 surfaces

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Process window extension of TiN diffusion barrier using preoxidation of Ru and ${RuO}_{x}$ film for $({Ba,Sr)TiO}_{3}$ dielectric film

Dong-Soo Yoon; Kwon Hong; Jae Sung Roh

J. Vac. Sci. Technol. A 19, 1730–1736 (2001) https://doi.org/10.1116/1.1359544

Abstract

View articletitled, Process window extension of TiN diffusion barrier using preoxidation of Ru and <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">RuO</mi><mrow><mi>x</mi></mrow></msub></math> film for <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">(</mi><msub xmlns=""><mi mathvariant="normal">Ba,Sr)TiO</mi><mrow><mn>3</mn></mrow></msub></math> dielectric film

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ELECTRONICS/NANOMETER-SCALE SCIENCE AND TECHNOLOGY

Technology for the fabrication of ultrashort channel metal–oxide–semiconductor field-effect transistors

J. Knoch; J. Appenzeller; B. Lengeler; R. Martel; P. Solomon; Ph. Avouris; Ch. Dieker; Y. Lu; K. L. Wang; J. Scholvin; J. A. del Alamo

J. Vac. Sci. Technol. A 19, 1737–1741 (2001) https://doi.org/10.1116/1.1351803

Abstract

View articletitled, Technology for the fabrication of ultrashort channel metal–oxide–semiconductor field-effect transistors

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FLAT PANEL DISPLAYS/VACUUM TECHNOLOGY

Oxide phosphor thin-film electroluminescent devices fabricated by magnetron sputtering with rapid thermal annealing

Tadatsugu Minami; Hidenobu Toda; Toshihiro Miyata

J. Vac. Sci. Technol. A 19, 1742–1746 (2001) https://doi.org/10.1116/1.1342870

Abstract

View articletitled, Oxide phosphor thin-film electroluminescent devices fabricated by magnetron sputtering with rapid thermal annealing

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INDUSTRIAL ECOLOGY/PLASMA SCIENCE AND TECHNOLOGY/MANUFACTURING SCIENCE AND TECHNOLOGY/SURFACE ENGINEERING

Low- $k$ materials etching in magnetic neutral loop discharge plasma

Y. Morikawa; S. Yasunami; W. Chen; T. Hayashi; T. Uchida

J. Vac. Sci. Technol. A 19, 1747–1751 (2001) https://doi.org/10.1116/1.1355362

Abstract

View articletitled, Low-<math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">k</mi></math> materials etching in magnetic neutral loop discharge plasma

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MATERIAL CHARACTERIZATION/NANOMETER-SCALE SCIENCE AND TECHNOLOGY

Scanning spreading resistance microscopy study of a metalorganic chemical vapor deposited grown InP optoelectronic structure

St. J. Dixon-Warren; R. P. Lu; S. Ingrey; D. Macquistan; T. Bryskiewicz; G. Smith; B. Bryskiewicz

J. Vac. Sci. Technol. A 19, 1752–1757 (2001) https://doi.org/10.1116/1.1366704

Abstract

View articletitled, Scanning spreading resistance microscopy study of a metalorganic chemical vapor deposited grown InP optoelectronic structure

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MAGNETIC INTERFACES AND NANOSTRUCTURES/ELECTRONICS

Fabrication of ferromagnetic/semiconductor waveguide structures and application to microwave bandstop filter

W. Wu; C. C. Lee; C. S. Tsai; J. Su; W. So; J. Yoo; R. Chuang

J. Vac. Sci. Technol. A 19, 1758–1762 (2001) https://doi.org/10.1116/1.1349725

Abstract

View articletitled, Fabrication of ferromagnetic/semiconductor waveguide structures and application to microwave bandstop filter

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MAGNETIC INTERFACE AND NANOSTRUCTURE/NANOMETER-SCALE SCIENCE AND TECHNOLOGY/NANO 6

Calibrated magnetic force microscopy measurement of current-carrying lines

R. Yongsunthon; J. McCoy; E. D. Williams

J. Vac. Sci. Technol. A 19, 1763–1768 (2001) https://doi.org/10.1116/1.1379325

Abstract

View articletitled, Calibrated magnetic force microscopy measurement of current-carrying lines

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Scanning Hall probe microscopy on an atomic force microscope tip

B. K. Chong; H. Zhou; G. Mills; L. Donaldson; J. M. R. Weaver

J. Vac. Sci. Technol. A 19, 1769–1772 (2001) https://doi.org/10.1116/1.1379324

Abstract

View articletitled, Scanning Hall probe microscopy on an atomic force microscope tip

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Ferromagnetic resonance of monodisperse Co particles

U. Wiedwald; M. Spasova; M. Farle; M. Hilgendorff; M. Giersig

J. Vac. Sci. Technol. A 19, 1773–1776 (2001) https://doi.org/10.1116/1.1345906

Abstract

View articletitled, Ferromagnetic resonance of monodisperse Co particles

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MICRO-ELECTRO-MECHANICAL SYSTEMS/VACUUM TECHNOLOGY

Static friction and surface roughness studies of surface micromachined electrostatic micromotors using an atomic force/friction force microscope

Sriram Sundararajan; Bharat Bhushan

J. Vac. Sci. Technol. A 19, 1777–1785 (2001) https://doi.org/10.1116/1.1353539

Abstract

View articletitled, Static friction and surface roughness studies of surface micromachined electrostatic micromotors using an atomic force/friction force microscope

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NANOTUBES/NANOMETER-SCALE SCIENCE AND TECHNOLOGY

Field-emission properties of vertically aligned carbon-nanotube array dependent on gas exposures and growth conditions

S. C. Lim; H. J. Jeong; Y. S. Park; D. S. Bae; Y. C. Choi; Y. M. Shin; W. S. Kim; K. H. An; Y. H. Lee

J. Vac. Sci. Technol. A 19, 1786–1789 (2001) https://doi.org/10.1116/1.1372915

Abstract

View articletitled, Field-emission properties of vertically aligned carbon-nanotube array dependent on gas exposures and growth conditions

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Carbon nanotube-based electron gun for electron microscopy

John G. Leopold; Ory Zik; Eli Cheifetz; David Rosenblatt

J. Vac. Sci. Technol. A 19, 1790–1795 (2001) https://doi.org/10.1116/1.1345896

Abstract

View articletitled, Carbon nanotube-based electron gun for electron microscopy

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Growth of well-aligned carbon nanotubes on nickel by hot-filament-assisted dc plasma chemical vapor deposition in a ${CH}_{4} {/H}_{2}$ plasma

Yasuaki Hayashi; Tetsu Negishi; Shigehiro Nishino

J. Vac. Sci. Technol. A 19, 1796–1799 (2001) https://doi.org/10.1116/1.1345903

Abstract

View articletitled, Growth of well-aligned carbon nanotubes on nickel by hot-filament-assisted dc plasma chemical vapor deposition in a <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">CH</mi><mrow><mi mathvariant="normal">4</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">/H</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math> plasma

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Gas-phase production of carbon single-walled nanotubes from carbon monoxide via the HiPco process: A parametric study

Michael J. Bronikowski; Peter A. Willis; Daniel T. Colbert; K. A. Smith; Richard E. Smalley

J. Vac. Sci. Technol. A 19, 1800–1805 (2001) https://doi.org/10.1116/1.1380721

Abstract

View articletitled, Gas-phase production of carbon single-walled nanotubes from carbon monoxide via the HiPco process: A parametric study

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NANOMETER-SCALE SCIENCE AND TECHNOLOGY/NANO 6

Selective-area chemical-vapor deposition of Si using a bilayer dielectric mask patterned by proximal probe oxidation

S. Gwo; T. Yasuda; S. Yamasaki

J. Vac. Sci. Technol. A 19, 1806–1811 (2001) https://doi.org/10.1116/1.1342869

Abstract

View articletitled, Selective-area chemical-vapor deposition of Si using a bilayer dielectric mask patterned by proximal probe oxidation

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Amino-terminated self-assembled monolayer on a ${SiO}_{2}$ surface formed by chemical vapor deposition

Atsushi Hozumi; Yoshiyuki Yokogawa; Tetsuya Kameyama; Hiroyuki Sugimura; Kazuyuki Hayashi; Haruyuki Shirayama; Osamu Takai

J. Vac. Sci. Technol. A 19, 1812–1816 (2001) https://doi.org/10.1116/1.1336833

Abstract

View articletitled, Amino-terminated self-assembled monolayer on a <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SiO</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math> surface formed by chemical vapor deposition

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NANOMETER-SCALE SCIENCE AND TECHNOLOGY/NANO 6/MATERIAL CHARACTERIZATION

Surface acoustic wave investigation by ultrahigh vacuum scanning tunneling microscopy

P. U. Voigt; S. Krauß; E. Chilla; R. Koch

J. Vac. Sci. Technol. A 19, 1817–1821 (2001) https://doi.org/10.1116/1.1376698

Abstract

View articletitled, Surface acoustic wave investigation by ultrahigh vacuum scanning tunneling microscopy

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Method for navigating two scanning probes to a common point without additional microscopes

Hiroshi Okamoto; Dongmin Chen

J. Vac. Sci. Technol. A 19, 1822–1824 (2001) https://doi.org/10.1116/1.1376700

Abstract

View articletitled, Method for navigating two scanning probes to a common point without additional microscopes

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NANOMETER-SCALE SCIENCE AND TECHNOLOGY/NANO 6/MICRO-ELECTRO-MECHANICAL SYSTEMS

Nanomechanical properties of molecular organic thin films

J. Caro; J. Fraxedas; P. Gorostiza; F. Sanz

J. Vac. Sci. Technol. A 19, 1825–1828 (2001) https://doi.org/10.1116/1.1368662

Abstract

View articletitled, Nanomechanical properties of molecular organic thin films

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NANOMETER-SCALE SCIENCE AND TECHNOLOGY/NANO 6/SURFACE SCIENCE/MATERIAL CHARACTERIZATION

Self-organization of large-area periodic nanowire arrays by glancing incidence ion bombardment of ${CaF}_{2} (111)$ surfaces

Matthias Batzill; François Bardou; Ken J. Snowdon

J. Vac. Sci. Technol. A 19, 1829–1834 (2001) https://doi.org/10.1116/1.1349722

Abstract

View articletitled, Self-organization of large-area periodic nanowire arrays by glancing incidence ion bombardment of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">CaF</mi><mrow><mn>2</mn></mrow></msub><mtext xmlns="">(111)</mtext></math> surfaces

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PLASMA SCIENCE AND TECHNOLOGY/MANUFACTURING SCIENCE AND TECHNOLOGY

Aspect ratio dependent plasma-induced charging damage in rf precleaning of a metal contact

J. Kim; K. S. Shin; W. J. Park; Y. J. Kim; C. J. Kang; T. H. Ahn; J. T. Moon

J. Vac. Sci. Technol. A 19, 1835–1839 (2001) https://doi.org/10.1116/1.1369786

Abstract

View articletitled, Aspect ratio dependent plasma-induced charging damage in rf precleaning of a metal contact

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PLASMA SCIENCE AND TECHNOLOGY I/MANUFACTURING SCIENCE AND TECHNOLOGY

Reactive magnetron sputter-deposition of NbN and (Nb, Ti)N films related to sputtering source characterization and optimization

N. N. Iosad; B. D. Jackson; S. N. Polyakov; P. N. Dmitriev; T. M. Klapwijk

J. Vac. Sci. Technol. A 19, 1840–1845 (2001) https://doi.org/10.1116/1.1349189

Abstract

View articletitled, Reactive magnetron sputter-deposition of NbN and (Nb, Ti)N films related to sputtering source characterization and optimization

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SEMICONDUCTORS/ELECTRONICS

Process development for small-area GaN/AlGaN heterojunction bipolar transistors

K. P. Lee; A. P. Zhang; G. Dang; F. Ren; J. Han; W. S. Hobson; J. Lopata; C. R. Abenathy; S. J. Pearton; J. W. Lee

J. Vac. Sci. Technol. A 19, 1846–1849 (2001) https://doi.org/10.1116/1.1330260

Abstract

View articletitled, Process development for small-area GaN/AlGaN heterojunction bipolar transistors

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SEMICONDUCTORS/ELECTRONICS/SURFACE SCIENCE

Two-step metalorganic chemical vapor deposition growth of piezoelectric ZnO thin film on ${SiO}_{2} /Si$ substrate

S. Muthukumar; N. W. Emanetoglu; G. Patounakis; C. R. Gorla; S. Liang; Y. Lu

J. Vac. Sci. Technol. A 19, 1850–1853 (2001) https://doi.org/10.1116/1.1379323

Abstract

View articletitled, Two-step metalorganic chemical vapor deposition growth of piezoelectric ZnO thin film on <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SiO</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><mi mathvariant="normal" xmlns="">/Si</mi></math> substrate

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Characterization of residues formed by anhydrous hydrogen fluoride etching of doped oxides

Anthony J. Muscat; Adam G. Thorsness; Gerardo Montaño-Miranda

J. Vac. Sci. Technol. A 19, 1854–1861 (2001) https://doi.org/10.1116/1.1372907

Abstract

View articletitled, Characterization of residues formed by anhydrous hydrogen fluoride etching of doped oxides

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Critical behavior of epitaxial ${Si}_{1−x} {Ge}_{x} / Si(001)$ islands

R. Arief Budiman; Harry E. Ruda; D. D. Perović; B. Bahierathan

J. Vac. Sci. Technol. A 19, 1862–1867 (2001) https://doi.org/10.1116/1.1353543

Abstract

View articletitled, Critical behavior of epitaxial <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Si</mi><mrow><mtext>1−x</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ge</mi><mrow><mi>x</mi></mrow></msub><mi xmlns="">/</mi><mi mathvariant="normal" xmlns="">Si(001)</mi></math> islands

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Adatom assisted stabilization of ad dimers on Ge(001)

E. Zoethout; H. J. W. Zandvliet; Bene Poelsema

J. Vac. Sci. Technol. A 19, 1868–1870 (2001) https://doi.org/10.1116/1.1365126

Abstract

View articletitled, Adatom assisted stabilization of ad dimers on Ge(001)

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Investigation of the penetration of atomic hydrogen from the gas phase into ${SiO}_{2} / GaAs$

V. A. Kagadei; E. V. Nefyodtsev; D. I. Proskurovsky

J. Vac. Sci. Technol. A 19, 1871–1877 (2001) https://doi.org/10.1116/1.1371320

Abstract

View articletitled, Investigation of the penetration of atomic hydrogen from the gas phase into <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SiO</mi><mrow><mn>2</mn></mrow></msub><mi xmlns="">/</mi><mi mathvariant="normal" xmlns="">GaAs</mi></math>

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High density plasma via hole etching in SiC

H. Cho; K. P. Lee; P. Leerungnawarat; S. N. G. Chu; F. Ren; S. J. Pearton; C.-M. Zetterling

J. Vac. Sci. Technol. A 19, 1878–1881 (2001) https://doi.org/10.1116/1.1359539

Abstract

View articletitled, High density plasma via hole etching in SiC

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Reflection high-energy electron diffraction study of ion-beam induced carbonization for 3C–SiC heteroepitaxial growth on Si (100)

Nobuteru Tsubouchi; Akiyoshi Chayahara; Yoshiaki Mokuno; Atsushi Kinomura; Yuji Horino

J. Vac. Sci. Technol. A 19, 1882–1886 (2001) https://doi.org/10.1116/1.1371324

Abstract

View articletitled, Reflection high-energy electron diffraction study of ion-beam induced carbonization for 3C–SiC heteroepitaxial growth on Si (100)

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Epitaxial growth of cubic SiC thin films on silicon using single molecular precursors by metalorganic chemical vapor deposition

J.-H. Boo; S.-B. Lee; K.-W. Lee; K.-S. Yu; Y. Kim; S. H. Yeon; I. N. Jung

J. Vac. Sci. Technol. A 19, 1887–1893 (2001) https://doi.org/10.1116/1.1379321

Abstract

View articletitled, Epitaxial growth of cubic SiC thin films on silicon using single molecular precursors by metalorganic chemical vapor deposition

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Visible emission from amorphous AlN thin-film phosphors with Cu, Mn, or Cr

A. L. Martin; C. M. Spalding; V. I. Dimitrova; P. G. Van Patten; M. L. Caldwell; M. E. Kordesch; H. H. Richardson

J. Vac. Sci. Technol. A 19, 1894–1897 (2001) https://doi.org/10.1116/1.1353544

Abstract

View articletitled, Visible emission from amorphous AlN thin-film phosphors with Cu, Mn, or Cr

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Investigation of polycrystalline silicon grain structure with single wafer chemical vapor deposition technique

H. Bu; C. Hu; M. Bevan; S. Wang; E. Sanchez; L. Luo

J. Vac. Sci. Technol. A 19, 1898–1901 (2001) https://doi.org/10.1116/1.1355364

Abstract

View articletitled, Investigation of polycrystalline silicon grain structure with single wafer chemical vapor deposition technique

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Cluster deposition study by molecular dynamics simulation: Al and Cu cluster

Jeong Won Kang; Ki Seok Choi; Jin Cheol Kang; Eu Seok Kang; Ki Ryang Byun; Ho Jung Hwang

J. Vac. Sci. Technol. A 19, 1902–1906 (2001) https://doi.org/10.1116/1.1379318

Abstract

View articletitled, Cluster deposition study by molecular dynamics simulation: Al and Cu cluster

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SEMICONDUCTORS I/ELECTRONICS/SURFACE SCIENCE

Atomic-order thermal nitridation of Si(100) and subsequent growth of Si

T. Watanabe; M. Sakuraba; T. Matsuura; J. Murota

J. Vac. Sci. Technol. A 19, 1907–1911 (2001) https://doi.org/10.1116/1.1359549