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Epitaxial growth of ${TiO}_{2}$ thin films by pulsed laser deposition on GaAs(100) substrates

Xiaohua Liu; X. Y. Chen; J. Yin; Z. G. Liu; J. M. Liu; X. B. Yin; G. X. Chen; M. Wang

J. Vac. Sci. Technol. A 19, 391–393 (2001) https://doi.org/10.1116/1.1339017

Abstract

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Waveguide structure of Er-doped ${KTiOPO}_{4}$ films on different substrates by pulsed-laser deposition

Ke-Ming Wang; Bo-Rong Shi; Nelson Cue; Yong-Yuan Zhu; Rong-Fu Xiao; Fei Lu; Hui Hu; Yao-Gang Liu

J. Vac. Sci. Technol. A 19, 394–397 (2001) https://doi.org/10.1116/1.1349197

Abstract

View articletitled, Waveguide structure of Er-doped <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">KTiOPO</mi><mrow><mi mathvariant="normal">4</mi></mrow></msub></math> films on different substrates by pulsed-laser deposition

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Anisotropic etching of polymer films by high energy (∼100s of eV) oxygen atom neutral beams

Siddhartha Panda; Demetre J. Economou; Lee Chen

J. Vac. Sci. Technol. A 19, 398–404 (2001) https://doi.org/10.1116/1.1344909

Abstract

View articletitled, Anisotropic etching of polymer films by high energy (∼100s of eV) oxygen atom neutral beams

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Microstructure of Fe–N thin films prepared using an atomic nitrogen beam

N. D. Telling; G. A. Jones; C. A. Faunce; P. J. Grundy; H. J. Blythe; D. E. Joyce

J. Vac. Sci. Technol. A 19, 405–409 (2001) https://doi.org/10.1116/1.1339016

Abstract

View articletitled, Microstructure of Fe–N thin films prepared using an atomic nitrogen beam

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Epitaxial growth of ${Al}_{2} O_{3}$ thin films on $Si (100)$ using ionized beam deposition

S. W. Whangbo; Y. K. Choi; K. B. Chung; H. K. Jang; C. N. Whang

J. Vac. Sci. Technol. A 19, 410–413 (2001) https://doi.org/10.1116/1.1349730

Abstract

View articletitled, Epitaxial growth of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Al</mi><mrow><mn>2</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mn>3</mn></mrow></msub></math> thin films on <math xmlns="http://www.w3.org/1998/Math/MathML"><mi mathvariant="normal" xmlns="">Si</mi><mtext xmlns="">(100)</mtext></math> using ionized beam deposition

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Properties of aluminum-doped zinc oxide films deposited by high rate mid-frequency reactive magnetron sputtering

N. Malkomes; M. Vergöhl; B. Szyszka

J. Vac. Sci. Technol. A 19, 414–419 (2001) https://doi.org/10.1116/1.1339019

Abstract

View articletitled, Properties of aluminum-doped zinc oxide films deposited by high rate mid-frequency reactive magnetron sputtering

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Pulsed dc magnetron discharge for high-rate sputtering of thin films

Jindřich Musil; Jan Leština; Jaroslav Vlček; Tomáš Tölg

J. Vac. Sci. Technol. A 19, 420–424 (2001) https://doi.org/10.1116/1.1339018

Abstract

View articletitled, Pulsed dc magnetron discharge for high-rate sputtering of thin films

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Plasma enhanced direct current planar magnetron sputtering technique employing a twinned microwave electron cyclotron resonance plasma source

Xu Jun; Deng Xinlu; Yu Shiji; Lu Wenqi; Ma Tengcai

J. Vac. Sci. Technol. A 19, 425–428 (2001) https://doi.org/10.1116/1.1340654

Abstract

View articletitled, Plasma enhanced direct current planar magnetron sputtering technique employing a twinned microwave electron cyclotron resonance plasma source

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Frequency-dependent pulsed direct current magnetron sputtering of titanium oxide films

J.-Y. Kim; E. Barnat; E. J. Rymaszewski; T.-M. Lu

J. Vac. Sci. Technol. A 19, 429–434 (2001) https://doi.org/10.1116/1.1351064

Abstract

View articletitled, Frequency-dependent pulsed direct current magnetron sputtering of titanium oxide films

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High-density plasma patterning of low dielectric constant polymers: A comparison between polytetrafluoroethylene, parylene-N, and poly(arylene ether)

T. E. F. M. Standaert; P. J. Matsuo; X. Li; G. S. Oehrlein; T.-M. Lu; R. Gutmann; C. T. Rosenmayer; J. W. Bartz; J. G. Langan; W. R. Entley

J. Vac. Sci. Technol. A 19, 435–446 (2001) https://doi.org/10.1116/1.1349201

Abstract

View articletitled, High-density plasma patterning of low dielectric constant polymers: A comparison between polytetrafluoroethylene, parylene-N, and poly(arylene ether)

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Study of surface chemical changes and erosion rates for CV-1144-O silicone under electron cyclotron resonance oxygen plasma exposure

Li Yan; Xiang Gao; Corey Bungay; John A. Woollam

J. Vac. Sci. Technol. A 19, 447–454 (2001) https://doi.org/10.1116/1.1340652

Abstract

View articletitled, Study of surface chemical changes and erosion rates for CV-1144-O silicone under electron cyclotron resonance oxygen plasma exposure

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Characterization of titanium nitride etch rate and selectivity to silicon dioxide in a ${Cl}_{2}$ helicon-wave plasma

H. K. Chiu; T. L. Lin; Y. Hu; K. C. Leou; H. C. Lin; M. S. Tsai; T. Y. Huang

J. Vac. Sci. Technol. A 19, 455–459 (2001) https://doi.org/10.1116/1.1342866

Abstract

View articletitled, Characterization of titanium nitride etch rate and selectivity to silicon dioxide in a <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Cl</mi><mrow><mn>2</mn></mrow></msub></math> helicon-wave plasma

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Effects of gas-flow structures on radical and etch-product density distributions on wafers in magnetomicrowave plasma etching reactors

Masato Ikegawa; Jun’ichi Kobayashi; Ryoji Fukuyama

J. Vac. Sci. Technol. A 19, 460–466 (2001) https://doi.org/10.1116/1.1349727

Abstract

View articletitled, Effects of gas-flow structures on radical and etch-product density distributions on wafers in magnetomicrowave plasma etching reactors

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Cavity ring down detection of ${SiH}_{3}$ in a remote ${SiH}_{4}$ plasma and comparison with model calculations and mass spectrometry

W. M. M. Kessels; A. Leroux; M. G. H. Boogaarts; J. P. M. Hoefnagels; M. C. M. van de Sanden; D. C. Schram

J. Vac. Sci. Technol. A 19, 467–476 (2001) https://doi.org/10.1116/1.1339015

Abstract

View articletitled, Cavity ring down detection of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SiH</mi><mrow><mn>3</mn></mrow></msub></math> in a remote <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SiH</mi><mrow><mn>4</mn></mrow></msub></math> plasma and comparison with model calculations and mass spectrometry

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HBr concentration and temperature measurements in a plasma etch reactor using diode laser absorption spectroscopy

Shang-I Chou; Douglas S. Baer; Ronald K. Hanson; Wenli Z. Collison; Tom Q. Ni

J. Vac. Sci. Technol. A 19, 477–484 (2001) https://doi.org/10.1116/1.1342863

Abstract

View articletitled, HBr concentration and temperature measurements in a plasma etch reactor using diode laser absorption spectroscopy

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Electron cyclotron wave resonance plasma assisted deposition of cubic boron nitride thin films

Z. X. Cao

J. Vac. Sci. Technol. A 19, 485–489 (2001) https://doi.org/10.1116/1.1339007

Abstract

View articletitled, Electron cyclotron wave resonance plasma assisted deposition of cubic boron nitride thin films

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Use of radio frequency bias in the large area plasma processing system

Wallace M. Manheimer; Martin Lampe; Richard F. Fernsler

J. Vac. Sci. Technol. A 19, 490–498 (2001) https://doi.org/10.1116/1.1347050

Abstract

View articletitled, Use of radio frequency bias in the large area plasma processing system

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Comparison of pulsed laser deposition ${CN}_{x}$ films grown from organic and inorganic targets

P. González; R. Soto; B. León; M. Pérez-Amor

J. Vac. Sci. Technol. A 19, 499–502 (2001) https://doi.org/10.1116/1.1344908

Abstract

View articletitled, Comparison of pulsed laser deposition <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">CN</mi><mrow><mi>x</mi></mrow></msub></math> films grown from organic and inorganic targets

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Influence of the different operations of gas in the large microwave plasmas

Cong-Feng Wu; Wei-Dong Huang; Ru-Juan Zhan

J. Vac. Sci. Technol. A 19, 503–506 (2001) https://doi.org/10.1116/1.1351000

Abstract

View articletitled, Influence of the different operations of gas in the large microwave plasmas

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Fluorinated–chlorinated ${SiO}_{2}$ films prepared at low temperature by remote plasma-enhanced chemical-vapor deposition using mixtures of ${SiF}_{4}$ and ${SiCl}_{4}$

J. C. Alonso; E. Pichardo; L. Rodrı́guez-Fernandez; J. C. Cheang-Wong; A. Ortiz

J. Vac. Sci. Technol. A 19, 507–514 (2001) https://doi.org/10.1116/1.1349199

Abstract

View articletitled, Fluorinated–chlorinated <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SiO</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math> films prepared at low temperature by remote plasma-enhanced chemical-vapor deposition using mixtures of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SiF</mi><mrow><mi mathvariant="normal">4</mi></mrow></msub></math> and <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SiCl</mi><mrow><mi mathvariant="normal">4</mi></mrow></msub></math>

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Microcrystalline silicon by plasma enhanced chemical vapor deposition from silicon tetrafluoride

G. Cicala; P. Capezzuto; G. Bruno

J. Vac. Sci. Technol. A 19, 515–523 (2001) https://doi.org/10.1116/1.1351004

Abstract

View articletitled, Microcrystalline silicon by plasma enhanced chemical vapor deposition from silicon tetrafluoride

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Investigations of surface reactions during $C_{2} F_{6}$ plasma etching of ${SiO}_{2}$ with equipment and feature scale models

Da Zhang; Mark J. Kushner

J. Vac. Sci. Technol. A 19, 524–538 (2001) https://doi.org/10.1116/1.1349728

Abstract

View articletitled, Investigations of surface reactions during <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">C</mi><mrow><mn>2</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">F</mi><mrow><mn>6</mn></mrow></msub></math> plasma etching of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SiO</mi><mrow><mn>2</mn></mrow></msub></math> with equipment and feature scale models

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Characteristics of a large diameter reactive ion beam generated by an electron cyclotron resonance microwave plasma source

St. Geisler; A. Brockhaus; J. Engemann

J. Vac. Sci. Technol. A 19, 539–546 (2001) https://doi.org/10.1116/1.1347051

Abstract

View articletitled, Characteristics of a large diameter reactive ion beam generated by an electron cyclotron resonance microwave plasma source

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Thermal imidization of fluorinated poly(amic acid) precursors on a glycidyl methacrylate graft-polymerized Si(100) surface

Yan Zhang; K. L. Tan; B. Y. Liaw; D. J. Liaw; E. T. Kang; K. G. Neoh

J. Vac. Sci. Technol. A 19, 547–556 (2001) https://doi.org/10.1116/1.1340653

Abstract

View articletitled, Thermal imidization of fluorinated poly(amic acid) precursors on a glycidyl methacrylate graft-polymerized Si(100) surface

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Characterization of (Ti, Al)N films deposited by off-plane double bend filtered cathodic vacuum arc

Y. H. Cheng; B. K. Tay; S. P. Lau; X. Shi; H. C. Chua

J. Vac. Sci. Technol. A 19, 557–562 (2001) https://doi.org/10.1116/1.1351063

Abstract

View articletitled, Characterization of (Ti, Al)N films deposited by off-plane double bend filtered cathodic vacuum arc

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Adsorption of ${TiCl}_{4}$ and initial stages of Ti growth on Si(001)

Toshiyuki Mitsui; Eric Hill; Robert Curtis; Eric Ganz

J. Vac. Sci. Technol. A 19, 563–567 (2001) https://doi.org/10.1116/1.1351005

Abstract

View articletitled, Adsorption of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">TiCl</mi><mrow><mi mathvariant="normal">4</mi></mrow></msub></math> and initial stages of Ti growth on Si(001)

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Negative cesium sputter ion source for generating cluster primary ion beams for secondary ion mass spectrometry analysis

Greg Gillen; Lance King; Brian Freibaum; Richard Lareau; Joe Bennett; Frank Chmara

J. Vac. Sci. Technol. A 19, 568–575 (2001) https://doi.org/10.1116/1.1340651

Abstract

View articletitled, Negative cesium sputter ion source for generating cluster primary ion beams for secondary ion mass spectrometry analysis

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Study of chromium oxide film growth by chemical vapor deposition using infrared reflection absorption spectroscopy

V. M. Bermudez; W. J. DeSisto

J. Vac. Sci. Technol. A 19, 576–583 (2001) https://doi.org/10.1116/1.1339008

Abstract

View articletitled, Study of chromium oxide film growth by chemical vapor deposition using infrared reflection absorption spectroscopy

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Real-time spectroscopic ellipsometry as a characterization tool for oxide molecular beam epitaxy

B. J. Gibbons; M. E. Hawley; S. Trolier-McKinstry; D. G. Schlom

J. Vac. Sci. Technol. A 19, 584–590 (2001) https://doi.org/10.1116/1.1351054

Abstract

View articletitled, Real-time spectroscopic ellipsometry as a characterization tool for oxide molecular beam epitaxy

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Energy spectra of electrons in a dc glow discharge with a semitransparent anode

Vladimir Pletnev; Stefan Zukotynski

J. Vac. Sci. Technol. A 19, 591–598 (2001) https://doi.org/10.1116/1.1349200

Abstract

View articletitled, Energy spectra of electrons in a dc glow discharge with a semitransparent anode

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Development of vacuum ultraviolet absorption spectroscopy technique employing nitrogen molecule microdischarge hollow cathode lamp for absolute density measurements of nitrogen atoms in process plasmas

Seigou Takashima; Shigeo Arai; Masaru Hori; Toshio Goto; Akihiro Kono; Masafumi Ito; Katsumi Yoneda

J. Vac. Sci. Technol. A 19, 599–602 (2001) https://doi.org/10.1116/1.1340655

Abstract

View articletitled, Development of vacuum ultraviolet absorption spectroscopy technique employing nitrogen molecule microdischarge hollow cathode lamp for absolute density measurements of nitrogen atoms in process plasmas

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Use of angle resolved x-ray photoelectron spectroscopy for determination of depth and thickness of compound layer structures

S. Spruytte; C. Coldren; J. Harris; D. Pantelidis; H.-J. Lee; J. Bravman; M. Kelly

J. Vac. Sci. Technol. A 19, 603–608 (2001) https://doi.org/10.1116/1.1344906

Abstract

View articletitled, Use of angle resolved x-ray photoelectron spectroscopy for determination of depth and thickness of compound layer structures

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Microstructure and tribological performance of ${MoS}_{x} / Au$ co-sputtered composites

M. C. Simmonds; A. Savan; E. Pflüger; H. Van Swygenhoven

J. Vac. Sci. Technol. A 19, 609–613 (2001) https://doi.org/10.1116/1.1344907

Abstract

View articletitled, Microstructure and tribological performance of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">MoS</mi><mrow><mi>x</mi></mrow></msub><mi xmlns="">/</mi><mi mathvariant="normal" xmlns="">Au</mi></math> co-sputtered composites

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Texture studies of ${Si}_{1−x} {Ge}_{x}$ thin films by x-ray diffraction and transmission electron microscopy

W. Qin; D. G. Ast; T. I. Kamins

J. Vac. Sci. Technol. A 19, 614–620 (2001) https://doi.org/10.1116/1.1342864

Abstract

View articletitled, Texture studies of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Si</mi><mrow><mtext>1−x</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ge</mi><mrow><mi>x</mi></mrow></msub></math> thin films by x-ray diffraction and transmission electron microscopy

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Real-time growth rate metrology for a tungsten chemical vapor deposition process by acoustic sensing

L. Henn-Lecordier; J. N. Kidder, Jr.; G. W. Rubloff; C. A. Gogol; A. Wajid

J. Vac. Sci. Technol. A 19, 621–626 (2001) https://doi.org/10.1116/1.1340656

Abstract

View articletitled, Real-time growth rate metrology for a tungsten chemical vapor deposition process by acoustic sensing

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Microscopic composition difference related to oxidizing humidity near the ultrathin silicon oxide–Si(100) interface

Hiroshi Yamada

J. Vac. Sci. Technol. A 19, 627–632 (2001) https://doi.org/10.1116/1.1351065

Abstract

View articletitled, Microscopic composition difference related to oxidizing humidity near the ultrathin silicon oxide–Si(100) interface

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Microstructural investigation of $α- {Al}_{2} O_{3}$ -epitaxially coated cemented carbide cutting tools

Toshio Ishii; Nobuhiko Shima; Hiroshi Ueda; Shirou Okayama; Masayuki Gonda

J. Vac. Sci. Technol. A 19, 633–639 (2001) https://doi.org/10.1116/1.1349729

Abstract

View articletitled, Microstructural investigation of <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">α-</mi><msub xmlns=""><mi mathvariant="normal">Al</mi><mrow><mn>2</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mn>3</mn></mrow></msub></math>-epitaxially coated cemented carbide cutting tools

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Mechanism of ultralow outgassing rates in pure copper and chromium–copper alloy vacuum chambers: Reexamination by the pressure-rise method

Fumio Watanabe

J. Vac. Sci. Technol. A 19, 640–645 (2001) https://doi.org/10.1116/1.1339009

Abstract

View articletitled, Mechanism of ultralow outgassing rates in pure copper and chromium–copper alloy vacuum chambers: Reexamination by the pressure-rise method

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Study of a mechanically clamped cryo-chuck device in a high density plasma for deep anisotropic etching of silicon

C. Hibert; S. Aachboun; M. Boufnichel; P. Ranson

J. Vac. Sci. Technol. A 19, 646–650 (2001) https://doi.org/10.1116/1.1339014

Abstract

View articletitled, Study of a mechanically clamped cryo-chuck device in a high density plasma for deep anisotropic etching of silicon

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Fixed-bed microreactor for transient kinetic experiments with strongly adsorbing gases under high vacuum conditions

A. C. van Veen; H. W. Zanthoff; O. Hinrichsen; M. Muhler

J. Vac. Sci. Technol. A 19, 651–655 (2001) https://doi.org/10.1116/1.1344910

Abstract

View articletitled, Fixed-bed microreactor for transient kinetic experiments with strongly adsorbing gases under high vacuum conditions

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Spiral channel flows in a disk-type drag pump

Joong-Sik Heo; Young-Kyu Hwang

J. Vac. Sci. Technol. A 19, 656–661 (2001) https://doi.org/10.1116/1.1342865

Abstract

View articletitled, Spiral channel flows in a disk-type drag pump

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Three-dimensional rarefied flows in rotating helical channels

Young-Kyu Hwang; Joong-Sik Heo

J. Vac. Sci. Technol. A 19, 662–672 (2001) https://doi.org/10.1116/1.1350979

Abstract

View articletitled, Three-dimensional rarefied flows in rotating helical channels

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Calibrated variable leak for use in ion source operation

Robert A. Langley; Paul C. Dastoor; D. John O’Connor

J. Vac. Sci. Technol. A 19, 673–674 (2001) https://doi.org/10.1116/1.1342867

Abstract

View articletitled, Calibrated variable leak for use in ion source operation

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Speed distribution of $C_{2} H_{6}$ molecular beam scattered through chattering collision on a LiF(001) surface

Takashi Tomii; Takahiro Kondo; Shinjiro Yagyu; Shigehiko Yamamoto

J. Vac. Sci. Technol. A 19, 675–680 (2001) https://doi.org/10.1116/1.1349731

Abstract

View articletitled, Speed distribution of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">C</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">H</mi><mrow><mn>6</mn></mrow></msub></math> molecular beam scattered through chattering collision on a LiF(001) surface

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Laser damage studies on ${MgF}_{2}$ thin films

Maria Lucia Protopapa; Ferdinando De Tomasi; Maria Rita Perrone; Angela Piegari; Enrico Masetti; Detlev Ristau; Etienne Quesnel; Angela Duparré

J. Vac. Sci. Technol. A 19, 681–688 (2001) https://doi.org/10.1116/1.1347049

Abstract

View articletitled, Laser damage studies on <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">MgF</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math> thin films

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BRIEF REPORTS AND COMMENTS

Analysis of the molecular structure of fluorocarbon deposits produced by $C_{4} F_{8}$ and $C_{4} F_{8} - H_{2}$ plasmas

N. Takada; K. Shibagaki; K. Sasaki; K. Kadota; K.-I. Oyama

J. Vac. Sci. Technol. A 19, 689–692 (2001) https://doi.org/10.1116/1.1349198

View articletitled, Analysis of the molecular structure of fluorocarbon deposits produced by <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">C</mi><mrow><mn>4</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">F</mi><mrow><mn>8</mn></mrow></msub></math> and <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">C</mi><mrow><mn>4</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">F</mi><mrow><mn>8</mn></mrow></msub><mi xmlns="">–</mi><msub xmlns=""><mi mathvariant="normal">H</mi><mrow><mn>2</mn></mrow></msub></math> plasmas

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Reconsideration of the seal mechanism in the ConFlat^® system

Satoshi Kurokouchi; Shinsaku Morita; Masayuki Okabe

J. Vac. Sci. Technol. A 19, 693–696 (2001) https://doi.org/10.1116/1.1349196

Abstract

View articletitled, Reconsideration of the seal mechanism in the ConFlat® system

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Gravity-related transport in reactive off-axis sputtering deposition?

Shen Zhu; C.-H. Su; S. L. Lehozeky

J. Vac. Sci. Technol. A 19, 697–699 (2001) https://doi.org/10.1116/1.1347052

Abstract

View articletitled, Gravity-related transport in reactive off-axis sputtering deposition?

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Radio-frequency transient match monitoring using a fast Fourier transform for plasma diagnosis

Byungwhan Kim

J. Vac. Sci. Technol. A 19, 700–702 (2001) https://doi.org/10.1116/1.1349195

Abstract

View articletitled, Radio-frequency transient match monitoring using a fast Fourier transform for plasma diagnosis

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RAPID COMMUNICATIONS

Formation of macroparticles in arc ion-plated nitride coatings

Ming-Hua Shiao; Fuh-Sheng Shieu

J. Vac. Sci. Technol. A 19, 703–705 (2001) https://doi.org/10.1116/1.1351066

Abstract

View articletitled, Formation of macroparticles in arc ion-plated nitride coatings

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SHOP NOTES

Silicon bonding for ultrahigh vaccuum surface science studies

Shubha Gokhale; Andreas Fink; Peter Trischberger; Karl Eberle; Wolf Widdra

J. Vac. Sci. Technol. A 19, 706–708 (2001) https://doi.org/10.1116/1.1350997

Abstract

View articletitled, Silicon bonding for ultrahigh vaccuum surface science studies

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