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Volume 18, Issue 6

November 2000

ISSN 0734-2101

EISSN 1520-8559

REVIEW ARTICLES

Plasma deposition of optical films and coatings: A review

Ludvik Martinu; Daniel Poitras

J. Vac. Sci. Technol. A 18, 2619–2645 (2000) https://doi.org/10.1116/1.1314395

Abstract

View articletitled, Plasma deposition of optical films and coatings: A review

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Search for improved transparent conducting oxides: A fundamental investigation of CdO, ${Cd}_{2} {SnO}_{4},$ and ${Zn}_{2} {SnO}_{4}$

T. J. Coutts; D. L. Young; X. Li; W. P. Mulligan; X. Wu

J. Vac. Sci. Technol. A 18, 2646–2660 (2000) https://doi.org/10.1116/1.1290371

Abstract

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ARTICLES

Mechanisms for ${CF}_{2}$ radical generation and loss on surfaces in fluorocarbon plasmas

Da Zhang; Mark J. Kushner

J. Vac. Sci. Technol. A 18, 2661–2668 (2000) https://doi.org/10.1116/1.1319816

Abstract

View articletitled, Mechanisms for <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">CF</mi><mrow><mn>2</mn></mrow></msub></math> radical generation and loss on surfaces in fluorocarbon plasmas

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Transient plasma-induced emission analysis of laser-desorbed species during ${Cl}_{2}$ plasma etching of Si

Jae Young Choe; N. C. M. Fuller; Vincent M. Donnelly; Irving P. Herman

J. Vac. Sci. Technol. A 18, 2669–2679 (2000) https://doi.org/10.1116/1.1290375

Abstract

View articletitled, Transient plasma-induced emission analysis of laser-desorbed species during <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Cl</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math> plasma etching of Si

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Surface loss coefficients of ${CF}_{x}$ and F radicals on stainless steel

Harmeet Singh; J. W. Coburn; David B. Graves

J. Vac. Sci. Technol. A 18, 2680–2684 (2000) https://doi.org/10.1116/1.1308585

Abstract

View articletitled, Surface loss coefficients of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">CF</mi><mrow><mi>x</mi></mrow></msub></math> and F radicals on stainless steel

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Ion and substrate effects on surface reactions of ${CF}_{2}$ using $C_{2} F_{6},$ $C_{2} F_{6} {/H}_{2},$ and hexafluoropropylene oxide plasmas

Carmen I. Butoi; Neil M. Mackie; Keri L. Williams; Nathan E. Capps; Ellen R. Fisher

J. Vac. Sci. Technol. A 18, 2685–2698 (2000) https://doi.org/10.1116/1.1312371

Abstract

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Carbon deposition by electron beam cracking of hydrocarbons on ${Ta}_{2} {Zn}_{3} O_{8}$ thin film phosphors

Caroline A. Kondoleon; Philip Rack; Eric Lambers; Paul Holloway

J. Vac. Sci. Technol. A 18, 2699–2705 (2000) https://doi.org/10.1116/1.1319817

Abstract

View articletitled, Carbon deposition by electron beam cracking of hydrocarbons on <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Ta</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Zn</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mi mathvariant="normal">8</mi></mrow></msub></math> thin film phosphors

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Change in surface roughness with the thickness of ${TiO}_{2}$ film grown on MgO(001) by Ar-ion beam sputtering

Takeshi Uchitani; Kunisuke Maki

J. Vac. Sci. Technol. A 18, 2706–2708 (2000) https://doi.org/10.1116/1.1312375

Abstract

View articletitled, Change in surface roughness with the thickness of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">TiO</mi><mrow><mn>2</mn></mrow></msub></math> film grown on MgO(001) by Ar-ion beam sputtering

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A conductance model (approach) for kinetic studies: The Ti–Ta–Si system

Joshua Pelleg; L. Rubinovich

J. Vac. Sci. Technol. A 18, 2709–2714 (2000) https://doi.org/10.1116/1.1319678

Abstract

View articletitled, A conductance model (approach) for kinetic studies: The Ti–Ta–Si system

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Microwave plasma nitriding of a low-alloy steel

D. Hovorka; J. Vlček; R. Čerstvý; J. Musil; P. Bělský; M. Růžička; Jeon G. Han

J. Vac. Sci. Technol. A 18, 2715–2721 (2000) https://doi.org/10.1116/1.1308587

Abstract

View articletitled, Microwave plasma nitriding of a low-alloy steel

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Measurement of beam-gas scattering lifetime in Pohang light source

C. D. Park; T.-Y. Lee; I. H. Bae; S. M. Chung

J. Vac. Sci. Technol. A 18, 2722–2727 (2000) https://doi.org/10.1116/1.1319818

Abstract

View articletitled, Measurement of beam-gas scattering lifetime in Pohang light source

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Estimation of the TEOS dissociation coefficient by electron impact

C. Vallée; A. Rhallabi; A. Granier; A. Goullet; G. Turban

J. Vac. Sci. Technol. A 18, 2728–2732 (2000) https://doi.org/10.1116/1.1319820

Abstract

View articletitled, Estimation of the TEOS dissociation coefficient by electron impact

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Studies on plasma-nitrided iron by scanning electron microscopy, glancing angle x-ray diffraction, and x-ray photoelectron spectroscopy

Eduardo J. Miola; Sylvio D. de Souza; Pedro A. P. Nascente; Maristela Olzon-Dionysio; Carlos A. Olivieri; Dirceu Spinelli

J. Vac. Sci. Technol. A 18, 2733–2737 (2000) https://doi.org/10.1116/1.1314392

Abstract

View articletitled, Studies on plasma-nitrided iron by scanning electron microscopy, glancing angle x-ray diffraction, and x-ray photoelectron spectroscopy

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Scanning tunneling microscopy study of the Er/Ge(111) $c(2×8)$ interface

S. Pelletier; E. Ehret; B. Gautier; F. Palmino; J. C. Labrune

J. Vac. Sci. Technol. A 18, 2738–2741 (2000) https://doi.org/10.1116/1.1290377

Abstract

View articletitled, Scanning tunneling microscopy study of the Er/Ge(111) <math xmlns="http://www.w3.org/1998/Math/MathML"><mtext xmlns="">c(2×8)</mtext></math> interface

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Etching of xerogel in high-density fluorocarbon plasmas

T. E. F. M. Standaert; E. A. Joseph; G. S. Oehrlein; A. Jain; W. N. Gill; P. C. Wayner, Jr.; J. L. Plawsky

J. Vac. Sci. Technol. A 18, 2742–2748 (2000) https://doi.org/10.1116/1.1290376

Abstract

View articletitled, Etching of xerogel in high-density fluorocarbon plasmas

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High density plasma oxide etching using nitrogen trifluoride and acetylene

Laura Pruette; Simon Karecki; Ritwik Chatterjee; Rafael Reif; Terry Sparks; Victor Vartanian

J. Vac. Sci. Technol. A 18, 2749–2758 (2000) https://doi.org/10.1116/1.1290373

Abstract

View articletitled, High density plasma oxide etching using nitrogen trifluoride and acetylene

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Reaction layer dynamics in ion-assisted Si/XeF₂ etching: Temperature dependence

P. G. M. Sebel; L. J. F. Hermans; H. C. W. Beijerinck

J. Vac. Sci. Technol. A 18, 2759–2769 (2000) https://doi.org/10.1116/1.1316102

Abstract

View articletitled, Reaction layer dynamics in ion-assisted Si/XeF2 etching: Temperature dependence

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Etching chemistry of benzocyclobutene (BCB) low-k dielectric films in $F_{2} {+O}_{2}$ and ${Cl}_{2} {+O}_{2}$ high density plasmas

Steven A. Vitale; Heeyeop Chae; Herbert H. Sawin

J. Vac. Sci. Technol. A 18, 2770–2778 (2000) https://doi.org/10.1116/1.1310655

Abstract

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Codeposition on diamond film surface during reactive ion etching in ${SF}_{6}$ and $O_{2}$ plasmas

K. Teii; M. Hori; T. Goto

J. Vac. Sci. Technol. A 18, 2779–2784 (2000) https://doi.org/10.1116/1.1316098

Abstract

View articletitled, Codeposition on diamond film surface during reactive ion etching in <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SF</mi><mrow><mn>6</mn></mrow></msub></math> and <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mn>2</mn></mrow></msub></math> plasmas

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Ion fluxes and energies in inductively coupled radio-frequency discharges containing $C_{2} F_{6}$ and c- $C_{4} F_{8}$

A. N. Goyette; Yicheng Wang; M. Misakian; J. K. Olthoff

J. Vac. Sci. Technol. A 18, 2785–2790 (2000) https://doi.org/10.1116/1.1308590

Abstract

View articletitled, Ion fluxes and energies in inductively coupled radio-frequency discharges containing <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="bold">C</mi><mrow><mn>2</mn></mrow></msub><msub xmlns=""><mi mathvariant="bold">F</mi><mrow><mn>6</mn></mrow></msub></math> and c-<math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="bold">C</mi><mrow><mn>4</mn></mrow></msub><msub xmlns=""><mi mathvariant="bold">F</mi><mrow><mn>8</mn></mrow></msub></math>

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Angular dependence of ${SiO}_{2}$ etching in a fluorocarbon plasma

Byeong-Ok Cho; Sung-Wook Hwang; Gyeo-Re Lee; Sang Heup Moon

J. Vac. Sci. Technol. A 18, 2791–2798 (2000) https://doi.org/10.1116/1.1318193

Abstract

View articletitled, Angular dependence of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SiO</mi><mrow><mn>2</mn></mrow></msub></math> etching in a fluorocarbon plasma

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Tantalum etching with a nonthermal atmospheric-pressure plasma

V. J. Tu; J. Y. Jeong; A. Schütze; S. E. Babayan; G. Ding; G. S. Selwyn; R. F. Hicks

J. Vac. Sci. Technol. A 18, 2799–2805 (2000) https://doi.org/10.1116/1.1310652

Abstract

View articletitled, Tantalum etching with a nonthermal atmospheric-pressure plasma

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Control of the radio-frequency wave form at the chuck of an industrial oxide-etch reactor

Lee Berry; Helen Maynard; Paul Miller; Tony Moore; Michael Pendley; Victoria Resta; Dennis Sparks; Qingyun Yang

J. Vac. Sci. Technol. A 18, 2806–2814 (2000) https://doi.org/10.1116/1.1319819

Abstract

View articletitled, Control of the radio-frequency wave form at the chuck of an industrial oxide-etch reactor

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New very high frequency plasma source using a ${TM}_{01}$ -mode patch antenna with short pins

Tomohiro Okumura; Takuya Matsui; Hideo Suzuki; Kazuyuki Sakiyama

J. Vac. Sci. Technol. A 18, 2815–2821 (2000) https://doi.org/10.1116/1.1310654

Abstract

View articletitled, New very high frequency plasma source using a <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">TM</mi><mrow><mi mathvariant="normal">01</mi></mrow></msub></math>-mode patch antenna with short pins

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Remote plasma enhanced metalorganic chemical vapor deposition of TiN from tetrakis-dimethyl-amido-titanium

Ju-Young Yun; Shi-Woo Rhee; Sanggee Park; Jae-Gab Lee

J. Vac. Sci. Technol. A 18, 2822–2826 (2000) https://doi.org/10.1116/1.1316103

Abstract

View articletitled, Remote plasma enhanced metalorganic chemical vapor deposition of TiN from tetrakis-dimethyl-amido-titanium

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Effect of hydrogen dilution on the structure of SiOF films prepared by remote plasma enhanced chemical vapor deposition from ${SiF}_{4}$ -based plasmas

J. C. Alonso; E. Pichardo; V. Pankov; A. Ortiz

J. Vac. Sci. Technol. A 18, 2827–2834 (2000) https://doi.org/10.1116/1.1308593

Abstract

View articletitled, Effect of hydrogen dilution on the structure of SiOF films prepared by remote plasma enhanced chemical vapor deposition from <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SiF</mi><mrow><mn>4</mn></mrow></msub></math>-based plasmas

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Properties and the influences on plasma performance for the film produced by radio frequency boronization

J. Li; Y. P. Zhao; X. Z. Gong; B. N. Wan; X. M. Gu; J. R. Luo; S. D. Zhang; C. F. Li; Y. C. Fang; M. Zhen; X. M. Wang; J. S. Hu; S. F. Li; J. K. Xie; Y. X. Wan

J. Vac. Sci. Technol. A 18, 2835–2842 (2000) https://doi.org/10.1116/1.1308589

Abstract

View articletitled, Properties and the influences on plasma performance for the film produced by radio frequency boronization

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Characterization of step coverage change in ultraviolet-transparent plasma enhanced chemical vapor deposition silicon nitride films

J. Bierner; M. Jacob; H. Schönherr

J. Vac. Sci. Technol. A 18, 2843–2846 (2000) https://doi.org/10.1116/1.1314394

Abstract

View articletitled, Characterization of step coverage change in ultraviolet-transparent plasma enhanced chemical vapor deposition silicon nitride films

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Epitaxial growth of GaN using reactive neutrals extracted from the nitrogen Helicon wave plasma

Ki-Sung Kim; Seon-Hyo Kim

J. Vac. Sci. Technol. A 18, 2847–2853 (2000) https://doi.org/10.1116/1.1319676

Abstract

View articletitled, Epitaxial growth of GaN using reactive neutrals extracted from the nitrogen Helicon wave plasma

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Microstructure of Cu film sputter deposited on TiN

Akira Furuya; Yoshio Ohshita; Atsuhi Ogura

J. Vac. Sci. Technol. A 18, 2854–2857 (2000) https://doi.org/10.1116/1.1310653

Abstract

View articletitled, Microstructure of Cu film sputter deposited on TiN

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An anomalous erosion of a rectangular magnetron system

Eiji Shidoji; Masaharu Nemoto; Takuji Nomura

J. Vac. Sci. Technol. A 18, 2858–2863 (2000) https://doi.org/10.1116/1.1312376

Abstract

View articletitled, An anomalous erosion of a rectangular magnetron system

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Photoluminescence and heteroepitaxy of ZnO on sapphire substrate (0001) grown by rf magnetron sputtering

Kyoung-Kook Kim; Jae-Hoon Song; Hyung-Jin Jung; Won-Kook Choi; Seong-Ju Park; Jong-Han Song; Jeong-Yong Lee

J. Vac. Sci. Technol. A 18, 2864–2868 (2000) https://doi.org/10.1116/1.1318192

Abstract

View articletitled, Photoluminescence and heteroepitaxy of ZnO on sapphire substrate (0001) grown by rf magnetron sputtering

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Optical and microstructural properties of ${MgF}_{2}$ UV coatings grown by ion beam sputtering process

E. Quesnel; L. Dumas; D. Jacob; F. Peiró

J. Vac. Sci. Technol. A 18, 2869–2876 (2000) https://doi.org/10.1116/1.1290374

Abstract

View articletitled, Optical and microstructural properties of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">MgF</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math> UV coatings grown by ion beam sputtering process

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Influence of Pt underlayer on the magnetic and magneto-optical properties of sputtered ${Co}_{0.25} {Pt}_{0.75}$ alloy films, and the static recording performance

Z. Q. Zou; K. W. Kim; Y. P. Lee; M. Li; D. F. Shen

J. Vac. Sci. Technol. A 18, 2877–2883 (2000) https://doi.org/10.1116/1.1308588

Abstract

View articletitled, Influence of Pt underlayer on the magnetic and magneto-optical properties of sputtered <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="bold">Co</mi><mrow><mi mathvariant="bold">0.25</mi></mrow></msub><msub xmlns=""><mi mathvariant="bold">Pt</mi><mrow><mi mathvariant="bold">0.75</mi></mrow></msub></math> alloy films, and the static recording performance

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Residual stress formation in multilayered ${TiN/TaN}_{x}$ coatings during reactive magnetron sputter deposition

M. Nordin; M. Larsson; T. Joelsson; J. Birch; L. Hultman

J. Vac. Sci. Technol. A 18, 2884–2889 (2000) https://doi.org/10.1116/1.1308594

Abstract

View articletitled, Residual stress formation in multilayered <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">TiN/TaN</mi><mrow><mi>x</mi></mrow></msub></math> coatings during reactive magnetron sputter deposition

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Reactive pulsed magnetron sputtering process for alumina films

P. J. Kelly; P. S. Henderson; R. D. Arnell; G. A. Roche; D. Carter

J. Vac. Sci. Technol. A 18, 2890–2896 (2000) https://doi.org/10.1116/1.1319679

Abstract

View articletitled, Reactive pulsed magnetron sputtering process for alumina films

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Ionization of sputtered material in a planar magnetron discharge

C. Christou; Z. H. Barber

J. Vac. Sci. Technol. A 18, 2897–2907 (2000) https://doi.org/10.1116/1.1312370

Abstract

View articletitled, Ionization of sputtered material in a planar magnetron discharge

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Reactive deposition of compounds by a cavity-hollow cathode direct current sputtering system

Mehdi H. Kazemeini; Alexander A. Berezin

J. Vac. Sci. Technol. A 18, 2908–2913 (2000) https://doi.org/10.1116/1.1312373

Abstract

View articletitled, Reactive deposition of compounds by a cavity-hollow cathode direct current sputtering system

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Microstructure and chemical state of ${Ti}_{1−x} Y_{x} N$ film deposited by reactive magnetron sputtering

W. S. Choi; S. K. Hwang; C. M. Lee

J. Vac. Sci. Technol. A 18, 2914–2921 (2000) https://doi.org/10.1116/1.1319680

Abstract

View articletitled, Microstructure and chemical state of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Ti</mi><mrow><mtext>1−x</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Y</mi><mrow><mi>x</mi></mrow></msub><mi mathvariant="normal" xmlns="">N</mi></math> film deposited by reactive magnetron sputtering

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Phase development in annealed zirconia-titania nanolaminates

J. D. DeLoach; J. J. Shibilski; C. R. Crape; C. R. Aita

J. Vac. Sci. Technol. A 18, 2922–2927 (2000) https://doi.org/10.1116/1.1319681

Abstract

View articletitled, Phase development in annealed zirconia-titania nanolaminates

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Study of the double layer ${CeO}_{2} / {Nb}_{2} O_{5}$ thin film

Zaoli Zhang; Xinhua Du; Wendong Wang

J. Vac. Sci. Technol. A 18, 2928–2931 (2000) https://doi.org/10.1116/1.1314393

Abstract

View articletitled, Study of the double layer <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">CeO</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><mi xmlns="">/</mi><msub xmlns=""><mi mathvariant="normal">Nb</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mi mathvariant="normal">5</mi></mrow></msub></math> thin film

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Titanium oxide films on Si(100) deposited by e-beam evaporation

H. K. Jang; S. W. Whangbo; Y. K. Choi; Y. D. Chung; K. Jeong; C. N. Whang; Y. S. Lee; H-S. Lee; J. Y. Choi; G. H. Kim; T. K. Kim

J. Vac. Sci. Technol. A 18, 2932–2936 (2000) https://doi.org/10.1116/1.1312377

Abstract

View articletitled, Titanium oxide films on Si(100) deposited by e-beam evaporation

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Monte Carlo modeling of electron beam physical vapor deposition of yttrium

Jing Fan; Iain D. Boyd; Chris Shelton

J. Vac. Sci. Technol. A 18, 2937–2945 (2000) https://doi.org/10.1116/1.1310656

Abstract

View articletitled, Monte Carlo modeling of electron beam physical vapor deposition of yttrium

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Depth distribution of ${Bi}^{+}$ and ${Fe}^{+}$ implanted into polyimide $(C_{22} H_{10} N_{2} O_{5})_{n}$

Ke-Ming Wang; Hui Hu; Fei Lu; Feng Chen; Jiang-Hua Zhang; Xiang-Dong Liu; Ji-Tian Liu; Bo Wu; Mu-Bin Huang

J. Vac. Sci. Technol. A 18, 2946–2949 (2000) https://doi.org/10.1116/1.1316100

Abstract

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Near-surface chemistry in ${Zr}_{2} Fe$ and ZrVFe studied by means of x-ray photoemission spectroscopy: A temperature-dependent study

Janez Kovac; Oumar Sakho; Paolo Manini; M. Sancrotti

J. Vac. Sci. Technol. A 18, 2950–2956 (2000) https://doi.org/10.1116/1.1308591

Abstract

View articletitled, Near-surface chemistry in <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Zr</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><mi mathvariant="normal" xmlns="">Fe</mi></math> and ZrVFe studied by means of x-ray photoemission spectroscopy: A temperature-dependent study

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Dependence of optical properties on structural and compositional parameters in ${CuGaSe}_{2}$

R. Dı́az; T. Martı́n; J. M. Merino; M. León; F. Rueda

J. Vac. Sci. Technol. A 18, 2957–2963 (2000) https://doi.org/10.1116/1.1314391

Abstract

View articletitled, Dependence of optical properties on structural and compositional parameters in <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">CuGaSe</mi><mrow><mn>2</mn></mrow></msub></math>

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Role of delocalized nitrogen in determining the local atomic arrangement and mechanical properties of amorphous carbon nitride thin films

B. C. Holloway; O. Kraft; D. K. Shuh; W. D. Nix; M. Kelly; P. Pianetta; S. Hagström

J. Vac. Sci. Technol. A 18, 2964–2971 (2000) https://doi.org/10.1116/1.1308592

Abstract

View articletitled, Role of delocalized nitrogen in determining the local atomic arrangement and mechanical properties of amorphous carbon nitride thin films

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Effect of Mg content in ${Cu(Mg)/SiO}_{2} / Si$ multilayers on the resistivity after annealing in an oxygen ambient

Wonhee Lee; Heunglyul Cho; Bumseok Cho; Jiyoung Kim; Yong-suk Kim; Woo-Gwang Jung; Hoon Kwon; Jinhyung Lee; Chongmu Lee; P. J. Reucroft; Jaegab Lee

J. Vac. Sci. Technol. A 18, 2972–2977 (2000) https://doi.org/10.1116/1.1316101

Abstract

View articletitled, Effect of Mg content in <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Cu(Mg)/SiO</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><mi xmlns="">/</mi><mi mathvariant="normal" xmlns="">Si</mi></math> multilayers on the resistivity after annealing in an oxygen ambient

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Direct measurement of density-of-states effective mass and scattering parameter in transparent conducting oxides using second-order transport phenomena

D. L. Young; T. J. Coutts; V. I. Kaydanov; A. S. Gilmore; W. P. Mulligan

J. Vac. Sci. Technol. A 18, 2978–2985 (2000) https://doi.org/10.1116/1.1290372

Abstract

View articletitled, Direct measurement of density-of-states effective mass and scattering parameter in transparent conducting oxides using second-order transport phenomena

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Electrical properties of thin gate dielectric grown by rapid thermal oxidation

J. S. Lee; S. J. Chang; S. C. Sun; S. M. Jang; M. C. Yu

J. Vac. Sci. Technol. A 18, 2986–2991 (2000) https://doi.org/10.1116/1.1312374

Abstract

View articletitled, Electrical properties of thin gate dielectric grown by rapid thermal oxidation

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In situ measurement of thickness dependent electrical resistance of ultrathin Co films on ${SiO}_{2} /Si(111)$ substrate

M. Li; Y.-P. Zhao; G.-C. Wang

J. Vac. Sci. Technol. A 18, 2992–2996 (2000) https://doi.org/10.1116/1.1314390

Abstract

View articletitled, In situ measurement of thickness dependent electrical resistance of ultrathin Co films on <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SiO</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><mi mathvariant="normal" xmlns="">/Si(111)</mi></math> substrate

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Study of chemical vapor deposition diamond film evolution from a nanodiamond precursor by $C^{13}$ isotopic labeling and ion implantation

I. Gouzman; V. Richter; S. Rotter; A. Hoffman

J. Vac. Sci. Technol. A 18, 2997–3003 (2000) https://doi.org/10.1116/1.1319677

Abstract

View articletitled, Study of chemical vapor deposition diamond film evolution from a nanodiamond precursor by <math xmlns="http://www.w3.org/1998/Math/MathML"><msup xmlns=""><mi mathvariant="normal">C</mi><mrow><mn>13</mn></mrow></msup></math> isotopic labeling and ion implantation

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Postdeposition annealing of pulsed laser deposited ${CN}_{x}$ films

P. González; R. Soto; F. Lusquiños; B. León; M. Pérez-Amor

J. Vac. Sci. Technol. A 18, 3004–3007 (2000) https://doi.org/10.1116/1.1312372

Abstract

View articletitled, Postdeposition annealing of pulsed laser deposited <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">CN</mi><mrow><mi>x</mi></mrow></msub></math> films

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RAPID COMMUNICATIONS

Mass spectral investigation of the plasma phase of a pulsed plasma of acrylic acid

D. B. Haddow; A. J. Beck; R. M. France; S. Fraser; J. D. Whittle; R. D. Short

J. Vac. Sci. Technol. A 18, 3008–3011 (2000) https://doi.org/10.1116/1.1316099

Abstract

View articletitled, Mass spectral investigation of the plasma phase of a pulsed plasma of acrylic acid

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ERRATA

Erratum: “Effects of ${BCl}_{3}$ addition on ${Ar/Cl}_{2}$ gas in inductively coupled plasmas for lead zirconate titanate etching” [J. Vac. Sci. Technol. A 18, 1373 (2000)]

Tae-Hyun An; Joon-Yong Park; Geun-Young Yeom; Eui-Goo Chang; Chang-Il Kim

J. Vac. Sci. Technol. A 18, 3012–3013 (2000) https://doi.org/10.1116/1.1319316

Abstract

View articletitled, Erratum: “Effects of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">BCl</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub></math> addition on <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Ar/Cl</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math> gas in inductively coupled plasmas for lead zirconate titanate etching” [J. Vac. Sci. Technol. A 18, 1373 (2000)]

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