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Plasma etch/deposition modeling: A new dynamically coupled multiscale code and comparison with experiment

J. Vac. Sci. Technol. A 18, 2045–2052 (2000) https://doi.org/10.1116/1.1285990

View articletitled, Plasma etch/deposition modeling: A new dynamically coupled multiscale code and comparison with experiment

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Analysis of chlorine-containing plasmas applied in III/V semiconductor processing

Gerhard Franz; Agnes Kelp; Peter Messerer

J. Vac. Sci. Technol. A 18, 2053–2061 (2000) https://doi.org/10.1116/1.1286072

Abstract

View articletitled, Analysis of chlorine-containing plasmas applied in III/V semiconductor processing

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Effect of magnetic field configuration in the cathodic polymerization systems with two anode magnetrons

J. G. Zhao; H. K. Yasuda

J. Vac. Sci. Technol. A 18, 2062–2066 (2000) https://doi.org/10.1116/1.1286548

Abstract

View articletitled, Effect of magnetic field configuration in the cathodic polymerization systems with two anode magnetrons

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The role of feedgas chemistry, mask material, and processing parameters in profile evolution during plasma etching of Si(100)

J. M. Lane; K. H. A. Bogart; F. P. Klemens; J. T. C. Lee

J. Vac. Sci. Technol. A 18, 2067–2079 (2000) https://doi.org/10.1116/1.1286025

Abstract

View articletitled, The role of feedgas chemistry, mask material, and processing parameters in profile evolution during plasma etching of Si(100)

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Etching of ${(Ba,Sr)TiO}_{3}$ film by chlorine plasma

Teruo Shibano; Takashi Takenaga; Keisuke Nakamura; Tatsuo Oomori

J. Vac. Sci. Technol. A 18, 2080–2084 (2000) https://doi.org/10.1116/1.1286026

Abstract

View articletitled, Etching of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">(Ba,Sr)TiO</mi><mrow><mn>3</mn></mrow></msub></math> film by chlorine plasma

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Crystallization of amorphous-silicon films with seed layers of microcrystalline silicon by plasma heating

Hae-Yeol Kim; Chan-Do Park; Youn-Seon Kang; Kuk-Jin Jang; Jai-Young Lee

J. Vac. Sci. Technol. A 18, 2085–2089 (2000) https://doi.org/10.1116/1.1289538

Abstract

View articletitled, Crystallization of amorphous-silicon films with seed layers of microcrystalline silicon by plasma heating

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Etching of Si through a thick condensed ${XeF}_{2}$ layer

P. G. M. Sebel; L. J. F. Hermans; H. C. W. Beijerinck

J. Vac. Sci. Technol. A 18, 2090–2097 (2000) https://doi.org/10.1116/1.1288194

Abstract

View articletitled, Etching of Si through a thick condensed <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">XeF</mi><mrow><mn>2</mn></mrow></msub></math> layer

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Characteristics of ZnO:Cr thin films deposited by spray pyrolysis

A. Maldonado; M. de la L. Olvera; R. Asomoza; S. Tirado-Guerra

J. Vac. Sci. Technol. A 18, 2098–2101 (2000) https://doi.org/10.1116/1.1287444

Abstract

View articletitled, Characteristics of ZnO:Cr thin films deposited by spray pyrolysis

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Gas utilization in remote plasma cleaning and stripping applications

B. E. E. Kastenmeier; G. S. Oehrlein; John G. Langan; William R. Entley

J. Vac. Sci. Technol. A 18, 2102–2107 (2000) https://doi.org/10.1116/1.1287442

Abstract

View articletitled, Gas utilization in remote plasma cleaning and stripping applications

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Plasma injection with helicon sources

Francis F. Chen; Xicheng Jiang; John D. Evans

J. Vac. Sci. Technol. A 18, 2108–2115 (2000) https://doi.org/10.1116/1.1289537

Abstract

View articletitled, Plasma injection with helicon sources

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Powder formation in germane–silane plasmas

R. A. C. M. M. van Swaaij; B. S. Girwar; J. W. Metselaar

J. Vac. Sci. Technol. A 18, 2116–2121 (2000) https://doi.org/10.1116/1.1286022

Abstract

View articletitled, Powder formation in germane–silane plasmas

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Fluorocarbon polymer deposition kinetics in a low-pressure, high-density, inductively coupled plasma reactor

M. J. Sowa; M. E. Littau; V. Pohray; J. L. Cecchi

J. Vac. Sci. Technol. A 18, 2122–2129 (2000) https://doi.org/10.1116/1.1286396

Abstract

View articletitled, Fluorocarbon polymer deposition kinetics in a low-pressure, high-density, inductively coupled plasma reactor

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Sensitivity studies of silicon etching in chlorine/argon plasmas

S. Kleditzsch; U. Riedel

J. Vac. Sci. Technol. A 18, 2130–2136 (2000) https://doi.org/10.1116/1.1285997

Abstract

View articletitled, Sensitivity studies of silicon etching in chlorine/argon plasmas

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Interactions between plasmas in ionized physical vapor deposition discharges

Y. Andrew; Z. Lu; T. Snodgrass; G. Teitzel; A. E. Wendt

J. Vac. Sci. Technol. A 18, 2137–2142 (2000) https://doi.org/10.1116/1.1286360

Abstract

View articletitled, Interactions between plasmas in ionized physical vapor deposition discharges

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Investigation of Si-doped diamond-like carbon films synthesized by plasma immersion ion processing

X. M. He; K. C. Walter; M. Nastasi; S.-T. Lee; M. K. Fung

J. Vac. Sci. Technol. A 18, 2143–2148 (2000) https://doi.org/10.1116/1.1286141

Abstract

View articletitled, Investigation of Si-doped diamond-like carbon films synthesized by plasma immersion ion processing

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Studies on the optimum condition for the formation of a neutral loop discharge plasma

Y. M. Sung; K. Uchino; K. Muraoka; T. Sakoda

J. Vac. Sci. Technol. A 18, 2149–2152 (2000) https://doi.org/10.1116/1.1286391

Abstract

View articletitled, Studies on the optimum condition for the formation of a neutral loop discharge plasma

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Film growth precursors in a remote ${SiH}_{4}$ plasma used for high-rate deposition of hydrogenated amorphous silicon

W. M. M. Kessels; M. C. M. van de Sanden; D. C. Schram

J. Vac. Sci. Technol. A 18, 2153–2163 (2000) https://doi.org/10.1116/1.1289541

Abstract

View articletitled, Film growth precursors in a remote <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SiH</mi><mrow><mi mathvariant="normal">4</mi></mrow></msub></math> plasma used for high-rate deposition of hydrogenated amorphous silicon

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Effects of plasma excitation power, sample bias, and duty cycle on the structure and surface properties of amorphous carbon thin films fabricated on AISI440 steel by plasma immersion ion implantation

Z. M. Zeng; X. B. Tian; T. K. Kwok; B. Y. Tang; M. K. Fung; P. K. Chu

J. Vac. Sci. Technol. A 18, 2164–2168 (2000) https://doi.org/10.1116/1.1285996

Abstract

View articletitled, Effects of plasma excitation power, sample bias, and duty cycle on the structure and surface properties of amorphous carbon thin films fabricated on AISI440 steel by plasma immersion ion implantation

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${Cl}_{2}$ -based dry etching of GaN films under inductively coupled plasma conditions

Y. H. Im; J. S. Park; Y. B. Hahn; K. S. Nahm; Y-.S. Lee; B. C. Cho; K. Y. Lim; H. J. Lee; S. J. Pearton

J. Vac. Sci. Technol. A 18, 2169–2174 (2000) https://doi.org/10.1116/1.1286363

Abstract

View articletitled, <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Cl</mi><mrow><mn>2</mn></mrow></msub></math>-based dry etching of GaN films under inductively coupled plasma conditions

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Investigation of dilute ${SF}_{6}$ discharges for application to SiC reactive ion etching

J. D. Scofield; B. N. Ganguly; P. Bletzinger

J. Vac. Sci. Technol. A 18, 2175–2184 (2000) https://doi.org/10.1116/1.1286361

Abstract

View articletitled, Investigation of dilute <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SF</mi><mrow><mi mathvariant="normal">6</mi></mrow></msub></math> discharges for application to SiC reactive ion etching

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Hysteresis and mode transitions in a low-frequency inductively coupled plasma

S. Xu; K. N. Ostrikov; W. Luo; S. Lee

J. Vac. Sci. Technol. A 18, 2185–2197 (2000) https://doi.org/10.1116/1.1286142

Abstract

View articletitled, Hysteresis and mode transitions in a low-frequency inductively coupled plasma

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Particle transport in a parallel-plate semiconductor reactor: Chamber modification and design criterion for enhanced process cleanliness

Sandeep Nijhawan; Peter H. McMurry; Stephen A. Campbell

J. Vac. Sci. Technol. A 18, 2198–2206 (2000) https://doi.org/10.1116/1.1288193

Abstract

View articletitled, Particle transport in a parallel-plate semiconductor reactor: Chamber modification and design criterion for enhanced process cleanliness

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Electron temperature, density, and metastable-atom density of argon electron–cyclotron-resonance plasma discharged by 7.0, 8.0, and 9.4 GHz microwaves

Y. Kawai; K. Kano; T. Suzuki; H. Akatsuka; Y. Fujii

J. Vac. Sci. Technol. A 18, 2207–2212 (2000) https://doi.org/10.1116/1.1289542

Abstract

View articletitled, Electron temperature, density, and metastable-atom density of argon electron–cyclotron-resonance plasma discharged by 7.0, 8.0, and 9.4 GHz microwaves

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Diagnosis of positive ions from the near-cathode region in a high-voltage pulsed corona discharge $N_{2}$ plasma

Shukai Tang; Wenchun Wang; Jiahong Liu; Xuefeng Yang; Yan Wu

J. Vac. Sci. Technol. A 18, 2213–2216 (2000) https://doi.org/10.1116/1.1286362

Abstract

View articletitled, Diagnosis of positive ions from the near-cathode region in a high-voltage pulsed corona discharge <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">N</mi><mrow><mn>2</mn></mrow></msub></math> plasma

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Abatement of $C_{2} F_{6}$ in rf and microwave plasma reactors

Steven A. Vitale; Herbert H. Sawin

J. Vac. Sci. Technol. A 18, 2217–2223 (2000) https://doi.org/10.1116/1.1286199

Abstract

View articletitled, Abatement of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">C</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">F</mi><mrow><mi mathvariant="normal">6</mi></mrow></msub></math> in rf and microwave plasma reactors

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Si etching rate calculation for low pressure high density plasma source using ${Cl}_{2}$ gas

Young D. Lee; H. Y. Chang; C. S. Chang

J. Vac. Sci. Technol. A 18, 2224–2229 (2000) https://doi.org/10.1116/1.1286197

Abstract

View articletitled, Si etching rate calculation for low pressure high density plasma source using <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Cl</mi><mrow><mn>2</mn></mrow></msub></math> gas

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Structural and mechanical characterization of fluorinated amorphous-carbon films deposited by plasma decomposition of ${CF}_{4} {–CH}_{4}$ gas mixtures

L. G. Jacobsohn; D. F. Franceschini; M. E. H. Maia da Costa; F. L. Freire, Jr.

J. Vac. Sci. Technol. A 18, 2230–2238 (2000) https://doi.org/10.1116/1.1289540

Abstract

View articletitled, Structural and mechanical characterization of fluorinated amorphous-carbon films deposited by plasma decomposition of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">CF</mi><mrow><mi mathvariant="normal">4</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">–CH</mi><mrow><mi mathvariant="normal">4</mi></mrow></msub></math> gas mixtures

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Er deposition in the submonolayer range on weakly boron-doped Si(111) surface

F. Palmino; S. Pelletier; E. Ehret; B. Gautier; J. C. Labrune

J. Vac. Sci. Technol. A 18, 2239–2243 (2000) https://doi.org/10.1116/1.1285934

Abstract

View articletitled, Er deposition in the submonolayer range on weakly boron-doped Si(111) surface

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Iron oxide thin films prepared by ion beam induced chemical vapor deposition: Structural characterization by infrared spectroscopy

F. Yubero; M. Ocaña; A. Justo; L. Contreras; A. R. González-Elipe

J. Vac. Sci. Technol. A 18, 2244–2248 (2000) https://doi.org/10.1116/1.1286198

Abstract

View articletitled, Iron oxide thin films prepared by ion beam induced chemical vapor deposition: Structural characterization by infrared spectroscopy

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Nickel precipitation at nanocavities in separation by implantation of oxygen

Miao Zhang; Xuchu Zeng; Paul K. Chu; R. Scholz; Chenglu Lin

J. Vac. Sci. Technol. A 18, 2249–2253 (2000) https://doi.org/10.1116/1.1288138

Abstract

View articletitled, Nickel precipitation at nanocavities in separation by implantation of oxygen

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How low-energy ions can enhance depositions on low-K dielectrics

Peter Abramowitz; Michael Kiene; Paul S. Ho

J. Vac. Sci. Technol. A 18, 2254–2261 (2000) https://doi.org/10.1116/1.1285933

Abstract

View articletitled, How low-energy ions can enhance depositions on low-K dielectrics

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Effect of a thin Ni layer on hydrogenation and thermal release characteristics of Ti thin films

L. Q. Shi; Z. Y. Zhou; G. Q. Zhao

J. Vac. Sci. Technol. A 18, 2262–2266 (2000) https://doi.org/10.1116/1.1285994

Abstract

View articletitled, Effect of a thin Ni layer on hydrogenation and thermal release characteristics of Ti thin films

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Damage in diamond produced by analysis beam

Z. Q. Ma; B. X. Liu; H. Naramoto

J. Vac. Sci. Technol. A 18, 2267–2270 (2000) https://doi.org/10.1116/1.1288941

Abstract

View articletitled, Damage in diamond produced by analysis beam

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Damage of InP (110) induced by low energy ${Ar}^{+}$ and ${He}^{+}$ bombardment

Q. Zhao; Z. W. Deng; R. W. M. Kwok; W. M. Lau

J. Vac. Sci. Technol. A 18, 2271–2276 (2000) https://doi.org/10.1116/1.1286103

Abstract

View articletitled, Damage of InP (110) induced by low energy <math xmlns="http://www.w3.org/1998/Math/MathML"><msup xmlns=""><mi mathvariant="normal">Ar</mi><mrow><mi>+</mi></mrow></msup></math> and <math xmlns="http://www.w3.org/1998/Math/MathML"><msup xmlns=""><mi mathvariant="normal">He</mi><mrow><mi>+</mi></mrow></msup></math> bombardment

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Effects of increasing nitrogen concentration on the structure of carbon nitride films deposited by ion beam assisted deposition

P. Hammer; N. M. Victoria; F. Alvarez

J. Vac. Sci. Technol. A 18, 2277–2287 (2000) https://doi.org/10.1116/1.1285993

Abstract

View articletitled, Effects of increasing nitrogen concentration on the structure of carbon nitride films deposited by ion beam assisted deposition

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Vacuum beam studies of photoresist etching kinetics

Frank Greer; J. W. Coburn; David B. Graves

J. Vac. Sci. Technol. A 18, 2288–2294 (2000) https://doi.org/10.1116/1.1287721

Abstract

View articletitled, Vacuum beam studies of photoresist etching kinetics

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ZnO:Zn phosphor thin films prepared by ion beam sputtering

W. Li; D. S. Mao; F. M. Zhang; X. Wang; X. H. Liu; S. C. Zou; Y. K. Zhu; Q. Li; J. F. Xu

J. Vac. Sci. Technol. A 18, 2295–2301 (2000) https://doi.org/10.1116/1.1289694

Abstract

View articletitled, ZnO:Zn phosphor thin films prepared by ion beam sputtering

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Characterization studies of diamond-like carbon films grown using a saddle-field fast-atom-beam source

D. Sarangi; O. S. Panwar; S. Kumar; R. Bhattacharyya

J. Vac. Sci. Technol. A 18, 2302–2311 (2000) https://doi.org/10.1116/1.1289699

Abstract

View articletitled, Characterization studies of diamond-like carbon films grown using a saddle-field fast-atom-beam source

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Ti, TiN, and Ti/TiN thin films prepared by ion beam assisted deposition as diffusion barriers between Cu and Si

Haicuan Mu; Yuehui Yu; E. Z. Luo; B. Sundaravel; S. P. Wong; I. H. Wilson

J. Vac. Sci. Technol. A 18, 2312–2318 (2000) https://doi.org/10.1116/1.1288942

Abstract

View articletitled, Ti, TiN, and Ti/TiN thin films prepared by ion beam assisted deposition as diffusion barriers between Cu and Si

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Interaction of alcohols with $a- {CH}_{x}$ films

Nisha Shukla; Andrew J. Gellman

J. Vac. Sci. Technol. A 18, 2319–2326 (2000) https://doi.org/10.1116/1.1287149

Abstract

View articletitled, Interaction of alcohols with <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">a-</mi><msub xmlns=""><mi mathvariant="normal">CH</mi><mrow><mi>x</mi></mrow></msub></math> films

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Fabrication of ZnO-doped ${Zr}_{0.8} {Sn}_{0.2} {TiO}_{4}$ thin films by radio frequency magnetron sputtering

Cheng-Liang Huang; Cheng-Shing Hsu

J. Vac. Sci. Technol. A 18, 2327–2332 (2000) https://doi.org/10.1116/1.1286143

Abstract

View articletitled, Fabrication of ZnO-doped <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Zr</mi><mrow><mi mathvariant="normal">0.8</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Sn</mi><mrow><mi mathvariant="normal">0.2</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">TiO</mi><mrow><mi mathvariant="normal">4</mi></mrow></msub></math> thin films by radio frequency magnetron sputtering

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Low-temperature magnetron sputter-deposition, hardness, and electrical resistivity of amorphous and crystalline alumina thin films

Quan Li; Yuan-Hsin Yu; C. Singh Bhatia; L. D. Marks; S. C. Lee; Y. W. Chung

J. Vac. Sci. Technol. A 18, 2333–2338 (2000) https://doi.org/10.1116/1.1286715

Abstract

View articletitled, Low-temperature magnetron sputter-deposition, hardness, and electrical resistivity of amorphous and crystalline alumina thin films

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Epitaxial growth and physical properties of Permalloy film deposited on MgO(001) by biased dc plasma sputtering

Masaki Ishino; Jiping Yang; Kenji Makihara; Ji Shi; Mituru Hashimoto

J. Vac. Sci. Technol. A 18, 2339–2343 (2000) https://doi.org/10.1116/1.1286200

Abstract

View articletitled, Epitaxial growth and physical properties of Permalloy film deposited on MgO(001) by biased dc plasma sputtering

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Amorphous carbon films deposited by direct current-magnetron sputtering: Void distribution investigated by gas effusion and small angle x-ray scattering experiments

F. L. Freire, Jr.; L. G. Jacobsohn; D. F. Franceschini; S. S. Camargo, Jr.

J. Vac. Sci. Technol. A 18, 2344–2348 (2000) https://doi.org/10.1116/1.1289696

Abstract

View articletitled, Amorphous carbon films deposited by direct current-magnetron sputtering: Void distribution investigated by gas effusion and small angle x-ray scattering experiments

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Growth, structure, and mechanical properties of ${CN}_{x} H_{y}$ films deposited by dc magnetron sputtering in $N_{2} / {Ar/H}_{2}$ discharges

Niklas Hellgren; Mats P. Johansson; Björgvin Hjörvarsson; Esteban Broitman; Mattias Östblom; Bo Liedberg; Lars Hultman; Jan-Eric Sundgren

J. Vac. Sci. Technol. A 18, 2349–2358 (2000) https://doi.org/10.1116/1.1286395

Abstract

View articletitled, Growth, structure, and mechanical properties of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">CN</mi><mrow><mi>x</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">H</mi><mrow><mi>y</mi></mrow></msub></math> films deposited by dc magnetron sputtering in <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">N</mi><mrow><mn>2</mn></mrow></msub><mi xmlns="">/</mi><msub xmlns=""><mi mathvariant="normal">Ar/H</mi><mrow><mn>2</mn></mrow></msub></math> discharges

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Chemical structure change of thin films prepared from nonpolymeric organic compounds by pulsed laser deposition

Takahiro Kajitani; Osamu Tanaka; Yoshihiro Tange; Hideaki Matsuda; Toshihiko Ooie; Tetsuo Yano; Masafumi Yoneda; Munehide Katsumura; Yoshifumi Suzaki

J. Vac. Sci. Technol. A 18, 2359–2362 (2000) https://doi.org/10.1116/1.1289695

Abstract

View articletitled, Chemical structure change of thin films prepared from nonpolymeric organic compounds by pulsed laser deposition

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Laser-induced photodetachment in high-density low-pressure ${SF}_{6}$ magnetoplasmas

L. St-Onge; M. Chaker; J. Margot

J. Vac. Sci. Technol. A 18, 2363–2371 (2000) https://doi.org/10.1116/1.1285935

Abstract

View articletitled, Laser-induced photodetachment in high-density low-pressure <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SF</mi><mrow><mn>6</mn></mrow></msub></math> magnetoplasmas

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Evaporation and ion assisted deposition of ${HfO}_{2}$ coatings: Some key points for high power laser applications

B. Andre; L. Poupinet; G. Ravel

J. Vac. Sci. Technol. A 18, 2372–2377 (2000) https://doi.org/10.1116/1.1287153

Abstract

View articletitled, Evaporation and ion assisted deposition of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">HfO</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math> coatings: Some key points for high power laser applications

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Influence of oxygen background pressure on the structure and properties of epitaxial ${SrTiO}_{3} / {La}_{0.35} {Nd}_{0.35} {Sr}_{0.3} {MnO}_{3}$ heterostructures grown by pulsed laser deposition

Wenbin Wu; K. H. Wong; C. L. Mak; Geoffrey Pang; C. L. Choy; Yuheng Zhang

J. Vac. Sci. Technol. A 18, 2378–2383 (2000) https://doi.org/10.1116/1.1287446

Abstract

View articletitled, Influence of oxygen background pressure on the structure and properties of epitaxial <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SrTiO</mi><mrow><mn>3</mn></mrow></msub><mi xmlns="">/</mi><msub xmlns=""><mi mathvariant="normal">La</mi><mrow><mtext>0.35</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Nd</mi><mrow><mtext>0.35</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Sr</mi><mrow><mtext>0.3</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">MnO</mi><mrow><mn>3</mn></mrow></msub></math> heterostructures grown by pulsed laser deposition

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The deposition behavior of ${SiO}_{2} {–TiO}_{2}$ thin film by metalorganic chemical vapor deposition method

Si-Moo Lee; Jeong-Hoon Park; Kug-Sun Hong; Woon-Jo Cho; Dong-Lae Kim

J. Vac. Sci. Technol. A 18, 2384–2388 (2000) https://doi.org/10.1116/1.1287154

Abstract

View articletitled, The deposition behavior of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SiO</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">–TiO</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math> thin film by metalorganic chemical vapor deposition method

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Properties of nitrogen doped silicon films deposited by low-pressure chemical vapor deposition from silane and ammonia

P. Temple-Boyer; L. Jalabert; L. Masarotto; J. L. Alay; J. R. Morante

J. Vac. Sci. Technol. A 18, 2389–2393 (2000) https://doi.org/10.1116/1.1286714

Abstract

View articletitled, Properties of nitrogen doped silicon films deposited by low-pressure chemical vapor deposition from silane and ammonia

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Comparison of titanium oxide films grown on bare glass and boiled glass in 50% $H_{2} {SO}_{4}$ by metal-organic chemical vapor deposition

H. K. Jang; S. W. Whangbo; Y. D. Chung; T. G. Kim; H. B. Kim; I. W. Lyo; C. N. Whang; C. H. Wang; D. J. Choi; T. K. Kim; H.-S. Lee

J. Vac. Sci. Technol. A 18, 2394–2399 (2000) https://doi.org/10.1116/1.1288137

Abstract

View articletitled, Comparison of titanium oxide films grown on bare glass and boiled glass in 50% <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">H</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">SO</mi><mrow><mi mathvariant="normal">4</mi></mrow></msub></math> by metal-organic chemical vapor deposition

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Chemical vapor deposition of Ru thin films by direct liquid injection of ${Ru(OD)}_{3}$ (OD=octanedionate)

Jung-Hyun Lee; Joo-Young Kim; Shi-Woo Rhee; DooYoung Yang; Dong-Hyun Kim; Cheol-Hoon Yang; Young-Ki Han; Chul-Ju Hwang

J. Vac. Sci. Technol. A 18, 2400–2403 (2000) https://doi.org/10.1116/1.1289693

Abstract

View articletitled, Chemical vapor deposition of Ru thin films by direct liquid injection of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Ru(OD)</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub></math> (OD=octanedionate)

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Variable angle spectroscopic ellipsometry of fluorocarbon films from hot filament chemical vapor deposition

Kenneth K. S. Lau; Jeffrey A. Caulfield; Karen K. Gleason

J. Vac. Sci. Technol. A 18, 2404–2411 (2000) https://doi.org/10.1116/1.1288191

Abstract

View articletitled, Variable angle spectroscopic ellipsometry of fluorocarbon films from hot filament chemical vapor deposition

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Effect of oxygen stoichiometry on the ferroelectric property of epitaxial all-oxide ${La}_{0.7} {Sr}_{0.3} {MnO}_{3} {/Pb(Zr}_{0.52} {Ti}_{0.48} {)O}_{3} {/La}_{0.7} {Sr}_{0.3} {MnO}_{3}$ thin-film capacitors

Wenbin Wu; K. H. Wong; C. L. Mak; C. L. Choy; Y. H. Zhang

J. Vac. Sci. Technol. A 18, 2412–2416 (2000) https://doi.org/10.1116/1.1288195

Abstract

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Preparation and characterization of clean, single-crystalline ${YH}_{x}$ films $(0⩽x⩽2.9)$ on W(110)

J. Hayoz; Th. Pillo; M. Bovet; A. Züttel; St. Guthrie; G. Pastore; L. Schlapbach; P. Aebi

J. Vac. Sci. Technol. A 18, 2417–2431 (2000) https://doi.org/10.1116/1.1286073

Abstract

View articletitled, Preparation and characterization of clean, single-crystalline <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">YH</mi><mrow><mi>x</mi></mrow></msub></math> films <math xmlns="http://www.w3.org/1998/Math/MathML"><mtext xmlns="">(0⩽x⩽2.9)</mtext></math> on W(110)

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Two-step deposition process of piezoelectric ZnO film and its application for film bulk acoustic resonators

Sang-Hyun Park; Byeng-Chul Seo; Giwan Yoon; Hee-Dae Park

J. Vac. Sci. Technol. A 18, 2432–2436 (2000) https://doi.org/10.1116/1.1287443

Abstract

View articletitled, Two-step deposition process of piezoelectric ZnO film and its application for film bulk acoustic resonators

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Epitaxial growth of La–Ca–Mn–O thin film on out-of-plane twinned ${LaAlO}_{3}$

J.-H. Song; K. K. Kim; Y. J. Oh; H.-J. Jung; W. K. Choi; J. H. Song; D.-K. Choi

J. Vac. Sci. Technol. A 18, 2437–2440 (2000) https://doi.org/10.1116/1.1286713

Abstract

View articletitled, Epitaxial growth of La–Ca–Mn–O thin film on out-of-plane twinned <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">LaAlO</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub></math>

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Reactivity of heteropolyanions toward GaAs compound

A. Rothschild; A. Quennoy; A. Etcheberry; C. Debiemme-Chouvy

J. Vac. Sci. Technol. A 18, 2441–2447 (2000) https://doi.org/10.1116/1.1289539

Abstract

View articletitled, Reactivity of heteropolyanions toward GaAs compound

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Growth and characterization of GaTlAs

M. J. Antonell; B. Gila; K. Powers; C. R. Abernathy

J. Vac. Sci. Technol. A 18, 2448–2451 (2000) https://doi.org/10.1116/1.1286023

Abstract

View articletitled, Growth and characterization of GaTlAs

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Optical spectroscopic analyses of OH incorporation into ${SiO}_{2}$ films deposited from $O_{2}$ /tetraethoxysilane plasmas

A. Goullet; C. Vallée; A. Granier; G. Turban

J. Vac. Sci. Technol. A 18, 2452–2458 (2000) https://doi.org/10.1116/1.1287152

Abstract

View articletitled, Optical spectroscopic analyses of OH incorporation into <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SiO</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math> films deposited from <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math>/tetraethoxysilane plasmas

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Mass spectrometry study during the vapor deposition of poly-para-xylylene thin films

J. B. Fortin; T.-M. Lu

J. Vac. Sci. Technol. A 18, 2459–2465 (2000) https://doi.org/10.1116/1.1289773

Abstract

View articletitled, Mass spectrometry study during the vapor deposition of poly-para-xylylene thin films

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Semi-empirical modeling of the optical gap of amorphous hydrogenated nitrogenated carbon films

Larissa L. E. Santo; Steven F. Durrant; Elidiane C. Rangel; Douglas S. Galvão; Mário A. Bica de Moraes

J. Vac. Sci. Technol. A 18, 2466–2471 (2000) https://doi.org/10.1116/1.1289697

Abstract

View articletitled, Semi-empirical modeling of the optical gap of amorphous hydrogenated nitrogenated carbon films

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Red ${SrTiO}_{3} : Pr,Al$ phosphor as potential field emission display material

Meiso Yokoyama; Su-Hua Yang

J. Vac. Sci. Technol. A 18, 2472–2476 (2000) https://doi.org/10.1116/1.1288197

Abstract

View articletitled, Red <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SrTiO</mi><mrow><mn>3</mn></mrow></msub><mi xmlns="">:</mi><mi mathvariant="normal" xmlns="">Pr,Al</mi></math> phosphor as potential field emission display material

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Atomic force microscopy investigation of nanometer-scale modifications of polymer morphology caused by ultraviolet irradiation

M. Nowicki; H. Kaczmarek; R. Czajka; B. Susła

J. Vac. Sci. Technol. A 18, 2477–2481 (2000) https://doi.org/10.1116/1.1287441

Abstract

View articletitled, Atomic force microscopy investigation of nanometer-scale modifications of polymer morphology caused by ultraviolet irradiation

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Spectra mapping of scanning tunneling microscope-induced light from electrochemically deposited Ag films on Au

R. Nishitani; A. Kasuya; S. Szuba

J. Vac. Sci. Technol. A 18, 2482–2485 (2000) https://doi.org/10.1116/1.1287155

Abstract

View articletitled, Spectra mapping of scanning tunneling microscope-induced light from electrochemically deposited Ag films on Au

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Growth of diamond films on Ti–6Al–4V substrates and determination of residual stresses using Raman spectroscopy

Ashok Kumar; I. Ahmed; M. Vedawyas

J. Vac. Sci. Technol. A 18, 2486–2492 (2000) https://doi.org/10.1116/1.1285992

Abstract

View articletitled, Growth of diamond films on Ti–6Al–4V substrates and determination of residual stresses using Raman spectroscopy

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Luminous efficiency and secondary electron emission characteristics of alternating current plasma display panels with MgO–SrO–CaO protective layers

Rakhwan Kim; Younghyun Kim; Jinhui Cho; Jong-Wan Park

J. Vac. Sci. Technol. A 18, 2493–2496 (2000) https://doi.org/10.1116/1.1287151

Abstract

View articletitled, Luminous efficiency and secondary electron emission characteristics of alternating current plasma display panels with MgO–SrO–CaO protective layers

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Dynamical behavior of hydrogen molecule on GaAs(001) surface

Masafumi Ohashi; Masashi Ozeki; Jie Cui

J. Vac. Sci. Technol. A 18, 2497–2502 (2000) https://doi.org/10.1116/1.1287148

Abstract

View articletitled, Dynamical behavior of hydrogen molecule on GaAs(001) surface

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Analysis of silicon–oxide–silicon nitride stacks by medium-energy ion scattering

D. Landheer; P. Ma; W. N. Lennard; I. V. Mitchell; C. McNorgan

J. Vac. Sci. Technol. A 18, 2503–2506 (2000) https://doi.org/10.1116/1.1285991

Abstract

View articletitled, Analysis of silicon–oxide–silicon nitride stacks by medium-energy ion scattering

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Three-dimensional simulation of film microstructure produced by glancing angle deposition

T. Smy; D. Vick; M. J. Brett; S. K. Dew; A. T. Wu; J. C. Sit; K. D. Harris

J. Vac. Sci. Technol. A 18, 2507–2512 (2000) https://doi.org/10.1116/1.1286394

Abstract

View articletitled, Three-dimensional simulation of film microstructure produced by glancing angle deposition

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Potassium reaction on sulfur-passivated GaAs(100)

J. M. Seo

J. Vac. Sci. Technol. A 18, 2513–2516 (2000) https://doi.org/10.1116/1.1286390

Abstract

View articletitled, Potassium reaction on sulfur-passivated GaAs(100)

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The role of oxygen in the intrinsic tensile residual stress evolution in sputter-deposited thin metal films

A. Misra; M. Nastasi

J. Vac. Sci. Technol. A 18, 2517–2521 (2000) https://doi.org/10.1116/1.1286393

Abstract

View articletitled, The role of oxygen in the intrinsic tensile residual stress evolution in sputter-deposited thin metal films

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Interfacial silicon oxide formation during oxygen annealing of ${Ta}_{2} O_{5}$ thin films on Si: Oxygen isotope labeling

H. J. Park; A. Mao; D.-L. Kwong; J. M. White

J. Vac. Sci. Technol. A 18, 2522–2526 (2000) https://doi.org/10.1116/1.1286717

Abstract

View articletitled, Interfacial silicon oxide formation during oxygen annealing of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Ta</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mi mathvariant="normal">5</mi></mrow></msub></math> thin films on Si: Oxygen isotope labeling

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Kinetic investigation of copper film oxidation by spectroscopic ellipsometry and reflectometry

Yao Zhi Hu; Rahul Sharangpani; Sing-Pin Tay

J. Vac. Sci. Technol. A 18, 2527–2532 (2000) https://doi.org/10.1116/1.1287156

Abstract

View articletitled, Kinetic investigation of copper film oxidation by spectroscopic ellipsometry and reflectometry

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Experimental and theoretical study of a differentially pumped absorption gas cell used as a low energy-pass filter in the vacuum ultraviolet photon energy range

B. Mercier; M. Compin; C. Prevost; G. Bellec; R. Thissen; O. Dutuit; L. Nahon

J. Vac. Sci. Technol. A 18, 2533–2541 (2000) https://doi.org/10.1116/1.1288196

Abstract

View articletitled, Experimental and theoretical study of a differentially pumped absorption gas cell used as a low energy-pass filter in the vacuum ultraviolet photon energy range

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Alternative ${NH}_{4} F/HCl$ solution for ultraclean Si(001) surface

T. H. Bok; J. H. Ye; Sam F. Y. Li

J. Vac. Sci. Technol. A 18, 2542–2548 (2000) https://doi.org/10.1116/1.1286201

Abstract

View articletitled, Alternative <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">NH</mi><mrow><mn>4</mn></mrow></msub><mi mathvariant="normal" xmlns="">F/HCl</mi></math> solution for ultraclean Si(001) surface

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Evacuation and outgassing of vacuum glazing

N. Ng; R. E. Collins

J. Vac. Sci. Technol. A 18, 2549–2562 (2000) https://doi.org/10.1116/1.1289700

Abstract

View articletitled, Evacuation and outgassing of vacuum glazing

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Effects of chemical etching with hydrochloric acid on a glass surface

H. K. Jang; Y. D. Chung; S. W. Whangbo; I. W. Lyo; C. N. Whang; S. J. Lee; Seok Lee

J. Vac. Sci. Technol. A 18, 2563–2567 (2000) https://doi.org/10.1116/1.1287445

Abstract

View articletitled, Effects of chemical etching with hydrochloric acid on a glass surface

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Recommended practice for calibrating vacuum gauges of the thermal conductivity type

R. E. Ellefson; A. P. Miiller

J. Vac. Sci. Technol. A 18, 2568–2577 (2000) https://doi.org/10.1116/1.1286024

Abstract

View articletitled, Recommended practice for calibrating vacuum gauges of the thermal conductivity type

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Molecular adsorption of ${CH}_{3} CN$ and $C_{5} H_{5} N$ on $Si(111)7×7$

N. Shirota; S. Yagi; M. Taniguchi; E. Hashimoto

J. Vac. Sci. Technol. A 18, 2578–2580 (2000) https://doi.org/10.1116/1.1286392

Abstract

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Low cost, mechanically refrigerated diffusion pump baffle for ultrahigh vacuum chambers

Steven Chambreau; Monica L. Neuburger; Tom Ho; Brian Funk; David Pullman

J. Vac. Sci. Technol. A 18, 2581–2585 (2000) https://doi.org/10.1116/1.1285995

Abstract

View articletitled, Low cost, mechanically refrigerated diffusion pump baffle for ultrahigh vacuum chambers

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Thickness effects in ultrathin film chemical vapor deposition polymers

Jay J. Senkevich

J. Vac. Sci. Technol. A 18, 2586–2590 (2000) https://doi.org/10.1116/1.1286549

Abstract

View articletitled, Thickness effects in ultrathin film chemical vapor deposition polymers

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BRIEF REPORTS AND COMMENTS

Aligned silicon carbide nanocrystals at the ${SiO}_{2} /Si$ interface by C implantation into ${SiO}_{2}$ matrices

Chang-Ming Chen; Xinquan Liu; Zhifeng Li; Guoqin Yu; Dezhan Zhu; Jun Hu; Minqian Li; Wei Lu

J. Vac. Sci. Technol. A 18, 2591–2594 (2000) https://doi.org/10.1116/1.1287150

Abstract

View articletitled, Aligned silicon carbide nanocrystals at the <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SiO</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><mi mathvariant="normal" xmlns="">/Si</mi></math> interface by C implantation into <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SiO</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math> matrices

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Sequential turret source-masking system for fabrication of multilayer structures

T. Anthopoulos; T. S. Shafai

J. Vac. Sci. Technol. A 18, 2595–2596 (2000) https://doi.org/10.1116/1.1285989

Abstract

View articletitled, Sequential turret source-masking system for fabrication of multilayer structures

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ERRATA

Erratum: “Copper electroplating for future ultralarge scale integration interconnection” [J. Vac. Sci. Technol. A 18, 656 (2000)]

W. C. Gau; T. C. Chang; Y. S. Lin; J. C. Hu; L. J. Chen; C. Y. Chang; C.-L. Cheng

J. Vac. Sci. Technol. A 18, 2597 (2000) https://doi.org/10.1116/1.1286102

View articletitled, Erratum: “Copper electroplating for future ultralarge scale integration interconnection” [J. Vac. Sci. Technol. A 18, 656 (2000)]

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RAPID COMMUNICATIONS

Fabrication of micro and submicro Y–Ba–Cu–O particles by excimer laser processing

G. P. Luo; C. L. Chen; S. Y. Chen; J. Shen; Y. S. Wang; Y. Y. Sun; C. W. Chu; Y. Liou; N. B. Ming

J. Vac. Sci. Technol. A 18, 2598–2602 (2000) https://doi.org/10.1116/1.1286716

Abstract

View articletitled, Fabrication of micro and submicro Y–Ba–Cu–O particles by excimer laser processing

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SHOP NOTES

Kinematic sample mounting system for accurate positioning of transferrable samples

Adam Lapicki; Kevin J. Boyd; Scott L. Anderson

J. Vac. Sci. Technol. A 18, 2603–2605 (2000) https://doi.org/10.1116/1.1289698

Abstract

View articletitled, Kinematic sample mounting system for accurate positioning of transferrable samples

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Electrochemical fluorine source for ultrahigh vacuum dosing

Koji S. Nakayama; T. Sakurai; J. H. Weaver

J. Vac. Sci. Technol. A 18, 2606–2607 (2000) https://doi.org/10.1116/1.1289543

Abstract

View articletitled, Electrochemical fluorine source for ultrahigh vacuum dosing

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Effects of oxygen gettering and target mode change in the formation process of reactively sputtered Pt oxide thin films

Y. Abe; M. Kawamura; K. Sasaki

J. Vac. Sci. Technol. A 18, 2608–2612 (2000) https://doi.org/10.1116/1.1288192

Abstract

View articletitled, Effects of oxygen gettering and target mode change in the formation process of reactively sputtered Pt oxide thin films

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Issues

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