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Plasma etch/deposition modeling: A new dynamically coupled multiscale code and comparison with experiment

Michael J. Bear; John U. Guillory

J. Vac. Sci. Technol. A 18, 2045–2052 (2000) https://doi.org/10.1116/1.1285990

Abstract

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Analysis of chlorine-containing plasmas applied in III/V semiconductor processing

Gerhard Franz; Agnes Kelp; Peter Messerer

J. Vac. Sci. Technol. A 18, 2053–2061 (2000) https://doi.org/10.1116/1.1286072

Abstract

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Effect of magnetic field configuration in the cathodic polymerization systems with two anode magnetrons

J. G. Zhao; H. K. Yasuda

J. Vac. Sci. Technol. A 18, 2062–2066 (2000) https://doi.org/10.1116/1.1286548

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The role of feedgas chemistry, mask material, and processing parameters in profile evolution during plasma etching of Si(100)

J. M. Lane; K. H. A. Bogart; F. P. Klemens; J. T. C. Lee

J. Vac. Sci. Technol. A 18, 2067–2079 (2000) https://doi.org/10.1116/1.1286025

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Etching of ${(Ba,Sr)TiO}_{3}$ film by chlorine plasma

Teruo Shibano; Takashi Takenaga; Keisuke Nakamura; Tatsuo Oomori

J. Vac. Sci. Technol. A 18, 2080–2084 (2000) https://doi.org/10.1116/1.1286026

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Crystallization of amorphous-silicon films with seed layers of microcrystalline silicon by plasma heating

Hae-Yeol Kim; Chan-Do Park; Youn-Seon Kang; Kuk-Jin Jang; Jai-Young Lee

J. Vac. Sci. Technol. A 18, 2085–2089 (2000) https://doi.org/10.1116/1.1289538

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Etching of Si through a thick condensed ${XeF}_{2}$ layer

P. G. M. Sebel; L. J. F. Hermans; H. C. W. Beijerinck

J. Vac. Sci. Technol. A 18, 2090–2097 (2000) https://doi.org/10.1116/1.1288194

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Characteristics of ZnO:Cr thin films deposited by spray pyrolysis

A. Maldonado; M. de la L. Olvera; R. Asomoza; S. Tirado-Guerra

J. Vac. Sci. Technol. A 18, 2098–2101 (2000) https://doi.org/10.1116/1.1287444

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Gas utilization in remote plasma cleaning and stripping applications

B. E. E. Kastenmeier; G. S. Oehrlein; John G. Langan; William R. Entley

J. Vac. Sci. Technol. A 18, 2102–2107 (2000) https://doi.org/10.1116/1.1287442

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Plasma injection with helicon sources

Francis F. Chen; Xicheng Jiang; John D. Evans

J. Vac. Sci. Technol. A 18, 2108–2115 (2000) https://doi.org/10.1116/1.1289537

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Powder formation in germane–silane plasmas

R. A. C. M. M. van Swaaij; B. S. Girwar; J. W. Metselaar

J. Vac. Sci. Technol. A 18, 2116–2121 (2000) https://doi.org/10.1116/1.1286022

Abstract

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Fluorocarbon polymer deposition kinetics in a low-pressure, high-density, inductively coupled plasma reactor

M. J. Sowa; M. E. Littau; V. Pohray; J. L. Cecchi

J. Vac. Sci. Technol. A 18, 2122–2129 (2000) https://doi.org/10.1116/1.1286396

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Sensitivity studies of silicon etching in chlorine/argon plasmas

S. Kleditzsch; U. Riedel

J. Vac. Sci. Technol. A 18, 2130–2136 (2000) https://doi.org/10.1116/1.1285997

Abstract

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Interactions between plasmas in ionized physical vapor deposition discharges

Y. Andrew; Z. Lu; T. Snodgrass; G. Teitzel; A. E. Wendt

J. Vac. Sci. Technol. A 18, 2137–2142 (2000) https://doi.org/10.1116/1.1286360

Abstract

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Investigation of Si-doped diamond-like carbon films synthesized by plasma immersion ion processing

X. M. He; K. C. Walter; M. Nastasi; S.-T. Lee; M. K. Fung

J. Vac. Sci. Technol. A 18, 2143–2148 (2000) https://doi.org/10.1116/1.1286141

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Studies on the optimum condition for the formation of a neutral loop discharge plasma

Y. M. Sung; K. Uchino; K. Muraoka; T. Sakoda

J. Vac. Sci. Technol. A 18, 2149–2152 (2000) https://doi.org/10.1116/1.1286391

Abstract

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Film growth precursors in a remote ${SiH}_{4}$ plasma used for high-rate deposition of hydrogenated amorphous silicon

W. M. M. Kessels; M. C. M. van de Sanden; D. C. Schram

J. Vac. Sci. Technol. A 18, 2153–2163 (2000) https://doi.org/10.1116/1.1289541

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Effects of plasma excitation power, sample bias, and duty cycle on the structure and surface properties of amorphous carbon thin films fabricated on AISI440 steel by plasma immersion ion implantation

Z. M. Zeng; X. B. Tian; T. K. Kwok; B. Y. Tang; M. K. Fung; P. K. Chu

J. Vac. Sci. Technol. A 18, 2164–2168 (2000) https://doi.org/10.1116/1.1285996

Abstract

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${Cl}_{2}$ -based dry etching of GaN films under inductively coupled plasma conditions

Y. H. Im; J. S. Park; Y. B. Hahn; K. S. Nahm; Y-.S. Lee; B. C. Cho; K. Y. Lim; H. J. Lee; S. J. Pearton

J. Vac. Sci. Technol. A 18, 2169–2174 (2000) https://doi.org/10.1116/1.1286363

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Investigation of dilute ${SF}_{6}$ discharges for application to SiC reactive ion etching

J. D. Scofield; B. N. Ganguly; P. Bletzinger

J. Vac. Sci. Technol. A 18, 2175–2184 (2000) https://doi.org/10.1116/1.1286361

Abstract

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Hysteresis and mode transitions in a low-frequency inductively coupled plasma

S. Xu; K. N. Ostrikov; W. Luo; S. Lee

J. Vac. Sci. Technol. A 18, 2185–2197 (2000) https://doi.org/10.1116/1.1286142

Abstract

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Particle transport in a parallel-plate semiconductor reactor: Chamber modification and design criterion for enhanced process cleanliness

Sandeep Nijhawan; Peter H. McMurry; Stephen A. Campbell

J. Vac. Sci. Technol. A 18, 2198–2206 (2000) https://doi.org/10.1116/1.1288193

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Electron temperature, density, and metastable-atom density of argon electron–cyclotron-resonance plasma discharged by 7.0, 8.0, and 9.4 GHz microwaves

Y. Kawai; K. Kano; T. Suzuki; H. Akatsuka; Y. Fujii

J. Vac. Sci. Technol. A 18, 2207–2212 (2000) https://doi.org/10.1116/1.1289542

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Diagnosis of positive ions from the near-cathode region in a high-voltage pulsed corona discharge $N_{2}$ plasma

Shukai Tang; Wenchun Wang; Jiahong Liu; Xuefeng Yang; Yan Wu

J. Vac. Sci. Technol. A 18, 2213–2216 (2000) https://doi.org/10.1116/1.1286362

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Abatement of $C_{2} F_{6}$ in rf and microwave plasma reactors

Steven A. Vitale; Herbert H. Sawin

J. Vac. Sci. Technol. A 18, 2217–2223 (2000) https://doi.org/10.1116/1.1286199

Abstract

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Si etching rate calculation for low pressure high density plasma source using ${Cl}_{2}$ gas

Young D. Lee; H. Y. Chang; C. S. Chang

J. Vac. Sci. Technol. A 18, 2224–2229 (2000) https://doi.org/10.1116/1.1286197

Abstract

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Structural and mechanical characterization of fluorinated amorphous-carbon films deposited by plasma decomposition of ${CF}_{4} {–CH}_{4}$ gas mixtures

L. G. Jacobsohn; D. F. Franceschini; M. E. H. Maia da Costa; F. L. Freire, Jr.

J. Vac. Sci. Technol. A 18, 2230–2238 (2000) https://doi.org/10.1116/1.1289540

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Er deposition in the submonolayer range on weakly boron-doped Si(111) surface

F. Palmino; S. Pelletier; E. Ehret; B. Gautier; J. C. Labrune

J. Vac. Sci. Technol. A 18, 2239–2243 (2000) https://doi.org/10.1116/1.1285934

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Iron oxide thin films prepared by ion beam induced chemical vapor deposition: Structural characterization by infrared spectroscopy

F. Yubero; M. Ocaña; A. Justo; L. Contreras; A. R. González-Elipe

J. Vac. Sci. Technol. A 18, 2244–2248 (2000) https://doi.org/10.1116/1.1286198

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Nickel precipitation at nanocavities in separation by implantation of oxygen

Miao Zhang; Xuchu Zeng; Paul K. Chu; R. Scholz; Chenglu Lin

J. Vac. Sci. Technol. A 18, 2249–2253 (2000) https://doi.org/10.1116/1.1288138

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How low-energy ions can enhance depositions on low-K dielectrics

Peter Abramowitz; Michael Kiene; Paul S. Ho

J. Vac. Sci. Technol. A 18, 2254–2261 (2000) https://doi.org/10.1116/1.1285933

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Effect of a thin Ni layer on hydrogenation and thermal release characteristics of Ti thin films

L. Q. Shi; Z. Y. Zhou; G. Q. Zhao

J. Vac. Sci. Technol. A 18, 2262–2266 (2000) https://doi.org/10.1116/1.1285994

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Damage in diamond produced by analysis beam

Z. Q. Ma; B. X. Liu; H. Naramoto

J. Vac. Sci. Technol. A 18, 2267–2270 (2000) https://doi.org/10.1116/1.1288941

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Damage of InP (110) induced by low energy ${Ar}^{+}$ and ${He}^{+}$ bombardment

Q. Zhao; Z. W. Deng; R. W. M. Kwok; W. M. Lau

J. Vac. Sci. Technol. A 18, 2271–2276 (2000) https://doi.org/10.1116/1.1286103

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Effects of increasing nitrogen concentration on the structure of carbon nitride films deposited by ion beam assisted deposition

P. Hammer; N. M. Victoria; F. Alvarez

J. Vac. Sci. Technol. A 18, 2277–2287 (2000) https://doi.org/10.1116/1.1285993

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Vacuum beam studies of photoresist etching kinetics

Frank Greer; J. W. Coburn; David B. Graves

J. Vac. Sci. Technol. A 18, 2288–2294 (2000) https://doi.org/10.1116/1.1287721

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ZnO:Zn phosphor thin films prepared by ion beam sputtering

W. Li; D. S. Mao; F. M. Zhang; X. Wang; X. H. Liu; S. C. Zou; Y. K. Zhu; Q. Li; J. F. Xu

J. Vac. Sci. Technol. A 18, 2295–2301 (2000) https://doi.org/10.1116/1.1289694

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Characterization studies of diamond-like carbon films grown using a saddle-field fast-atom-beam source

D. Sarangi; O. S. Panwar; S. Kumar; R. Bhattacharyya

J. Vac. Sci. Technol. A 18, 2302–2311 (2000) https://doi.org/10.1116/1.1289699

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Ti, TiN, and Ti/TiN thin films prepared by ion beam assisted deposition as diffusion barriers between Cu and Si

Haicuan Mu; Yuehui Yu; E. Z. Luo; B. Sundaravel; S. P. Wong; I. H. Wilson

J. Vac. Sci. Technol. A 18, 2312–2318 (2000) https://doi.org/10.1116/1.1288942

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Interaction of alcohols with $a- {CH}_{x}$ films

Nisha Shukla; Andrew J. Gellman

J. Vac. Sci. Technol. A 18, 2319–2326 (2000) https://doi.org/10.1116/1.1287149

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Fabrication of ZnO-doped ${Zr}_{0.8} {Sn}_{0.2} {TiO}_{4}$ thin films by radio frequency magnetron sputtering

Cheng-Liang Huang; Cheng-Shing Hsu

J. Vac. Sci. Technol. A 18, 2327–2332 (2000) https://doi.org/10.1116/1.1286143

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Low-temperature magnetron sputter-deposition, hardness, and electrical resistivity of amorphous and crystalline alumina thin films

Quan Li; Yuan-Hsin Yu; C. Singh Bhatia; L. D. Marks; S. C. Lee; Y. W. Chung

J. Vac. Sci. Technol. A 18, 2333–2338 (2000) https://doi.org/10.1116/1.1286715

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Epitaxial growth and physical properties of Permalloy film deposited on MgO(001) by biased dc plasma sputtering

Masaki Ishino; Jiping Yang; Kenji Makihara; Ji Shi; Mituru Hashimoto

J. Vac. Sci. Technol. A 18, 2339–2343 (2000) https://doi.org/10.1116/1.1286200

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Amorphous carbon films deposited by direct current-magnetron sputtering: Void distribution investigated by gas effusion and small angle x-ray scattering experiments

F. L. Freire, Jr.; L. G. Jacobsohn; D. F. Franceschini; S. S. Camargo, Jr.

J. Vac. Sci. Technol. A 18, 2344–2348 (2000) https://doi.org/10.1116/1.1289696

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Growth, structure, and mechanical properties of ${CN}_{x} H_{y}$ films deposited by dc magnetron sputtering in $N_{2} / {Ar/H}_{2}$ discharges

Niklas Hellgren; Mats P. Johansson; Björgvin Hjörvarsson; Esteban Broitman; Mattias Östblom; Bo Liedberg; Lars Hultman; Jan-Eric Sundgren

J. Vac. Sci. Technol. A 18, 2349–2358 (2000) https://doi.org/10.1116/1.1286395

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Chemical structure change of thin films prepared from nonpolymeric organic compounds by pulsed laser deposition

Takahiro Kajitani; Osamu Tanaka; Yoshihiro Tange; Hideaki Matsuda; Toshihiko Ooie; Tetsuo Yano; Masafumi Yoneda; Munehide Katsumura; Yoshifumi Suzaki

J. Vac. Sci. Technol. A 18, 2359–2362 (2000) https://doi.org/10.1116/1.1289695

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Laser-induced photodetachment in high-density low-pressure ${SF}_{6}$ magnetoplasmas

L. St-Onge; M. Chaker; J. Margot

J. Vac. Sci. Technol. A 18, 2363–2371 (2000) https://doi.org/10.1116/1.1285935

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Evaporation and ion assisted deposition of ${HfO}_{2}$ coatings: Some key points for high power laser applications

B. Andre; L. Poupinet; G. Ravel

J. Vac. Sci. Technol. A 18, 2372–2377 (2000) https://doi.org/10.1116/1.1287153

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Influence of oxygen background pressure on the structure and properties of epitaxial ${SrTiO}_{3} / {La}_{0.35} {Nd}_{0.35} {Sr}_{0.3} {MnO}_{3}$ heterostructures grown by pulsed laser deposition

Wenbin Wu; K. H. Wong; C. L. Mak; Geoffrey Pang; C. L. Choy; Yuheng Zhang

J. Vac. Sci. Technol. A 18, 2378–2383 (2000) https://doi.org/10.1116/1.1287446

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The deposition behavior of ${SiO}_{2} {–TiO}_{2}$ thin film by metalorganic chemical vapor deposition method

Si-Moo Lee; Jeong-Hoon Park; Kug-Sun Hong; Woon-Jo Cho; Dong-Lae Kim

J. Vac. Sci. Technol. A 18, 2384–2388 (2000) https://doi.org/10.1116/1.1287154

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Properties of nitrogen doped silicon films deposited by low-pressure chemical vapor deposition from silane and ammonia

P. Temple-Boyer; L. Jalabert; L. Masarotto; J. L. Alay; J. R. Morante

J. Vac. Sci. Technol. A 18, 2389–2393 (2000) https://doi.org/10.1116/1.1286714

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Comparison of titanium oxide films grown on bare glass and boiled glass in 50% $H_{2} {SO}_{4}$ by metal-organic chemical vapor deposition

H. K. Jang; S. W. Whangbo; Y. D. Chung; T. G. Kim; H. B. Kim; I. W. Lyo; C. N. Whang; C. H. Wang; D. J. Choi; T. K. Kim; H.-S. Lee

J. Vac. Sci. Technol. A 18, 2394–2399 (2000) https://doi.org/10.1116/1.1288137

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Chemical vapor deposition of Ru thin films by direct liquid injection of ${Ru(OD)}_{3}$ (OD=octanedionate)

Jung-Hyun Lee; Joo-Young Kim; Shi-Woo Rhee; DooYoung Yang; Dong-Hyun Kim; Cheol-Hoon Yang; Young-Ki Han; Chul-Ju Hwang

J. Vac. Sci. Technol. A 18, 2400–2403 (2000) https://doi.org/10.1116/1.1289693

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Variable angle spectroscopic ellipsometry of fluorocarbon films from hot filament chemical vapor deposition

Kenneth K. S. Lau; Jeffrey A. Caulfield; Karen K. Gleason

J. Vac. Sci. Technol. A 18, 2404–2411 (2000) https://doi.org/10.1116/1.1288191

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Effect of oxygen stoichiometry on the ferroelectric property of epitaxial all-oxide ${La}_{0.7} {Sr}_{0.3} {MnO}_{3} {/Pb(Zr}_{0.52} {Ti}_{0.48} {)O}_{3} {/La}_{0.7} {Sr}_{0.3} {MnO}_{3}$ thin-film capacitors

Wenbin Wu; K. H. Wong; C. L. Mak; C. L. Choy; Y. H. Zhang

J. Vac. Sci. Technol. A 18, 2412–2416 (2000) https://doi.org/10.1116/1.1288195

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Preparation and characterization of clean, single-crystalline ${YH}_{x}$ films $(0⩽x⩽2.9)$ on W(110)

J. Hayoz; Th. Pillo; M. Bovet; A. Züttel; St. Guthrie; G. Pastore; L. Schlapbach; P. Aebi

J. Vac. Sci. Technol. A 18, 2417–2431 (2000) https://doi.org/10.1116/1.1286073

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Two-step deposition process of piezoelectric ZnO film and its application for film bulk acoustic resonators

Sang-Hyun Park; Byeng-Chul Seo; Giwan Yoon; Hee-Dae Park

J. Vac. Sci. Technol. A 18, 2432–2436 (2000) https://doi.org/10.1116/1.1287443

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Epitaxial growth of La–Ca–Mn–O thin film on out-of-plane twinned ${LaAlO}_{3}$

J.-H. Song; K. K. Kim; Y. J. Oh; H.-J. Jung; W. K. Choi; J. H. Song; D.-K. Choi

J. Vac. Sci. Technol. A 18, 2437–2440 (2000) https://doi.org/10.1116/1.1286713

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Reactivity of heteropolyanions toward GaAs compound

A. Rothschild; A. Quennoy; A. Etcheberry; C. Debiemme-Chouvy

J. Vac. Sci. Technol. A 18, 2441–2447 (2000) https://doi.org/10.1116/1.1289539

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Growth and characterization of GaTlAs

M. J. Antonell; B. Gila; K. Powers; C. R. Abernathy

J. Vac. Sci. Technol. A 18, 2448–2451 (2000) https://doi.org/10.1116/1.1286023

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Optical spectroscopic analyses of OH incorporation into ${SiO}_{2}$ films deposited from $O_{2}$ /tetraethoxysilane plasmas

A. Goullet; C. Vallée; A. Granier; G. Turban

J. Vac. Sci. Technol. A 18, 2452–2458 (2000) https://doi.org/10.1116/1.1287152

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Mass spectrometry study during the vapor deposition of poly-para-xylylene thin films

J. B. Fortin; T.-M. Lu

J. Vac. Sci. Technol. A 18, 2459–2465 (2000) https://doi.org/10.1116/1.1289773

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Semi-empirical modeling of the optical gap of amorphous hydrogenated nitrogenated carbon films

Larissa L. E. Santo; Steven F. Durrant; Elidiane C. Rangel; Douglas S. Galvão; Mário A. Bica de Moraes

J. Vac. Sci. Technol. A 18, 2466–2471 (2000) https://doi.org/10.1116/1.1289697

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Red ${SrTiO}_{3} : Pr,Al$ phosphor as potential field emission display material

Meiso Yokoyama; Su-Hua Yang

J. Vac. Sci. Technol. A 18, 2472–2476 (2000) https://doi.org/10.1116/1.1288197

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Atomic force microscopy investigation of nanometer-scale modifications of polymer morphology caused by ultraviolet irradiation

M. Nowicki; H. Kaczmarek; R. Czajka; B. Susła

J. Vac. Sci. Technol. A 18, 2477–2481 (2000) https://doi.org/10.1116/1.1287441

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Spectra mapping of scanning tunneling microscope-induced light from electrochemically deposited Ag films on Au

R. Nishitani; A. Kasuya; S. Szuba

J. Vac. Sci. Technol. A 18, 2482–2485 (2000) https://doi.org/10.1116/1.1287155

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Growth of diamond films on Ti–6Al–4V substrates and determination of residual stresses using Raman spectroscopy

Ashok Kumar; I. Ahmed; M. Vedawyas

J. Vac. Sci. Technol. A 18, 2486–2492 (2000) https://doi.org/10.1116/1.1285992

Abstract

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Luminous efficiency and secondary electron emission characteristics of alternating current plasma display panels with MgO–SrO–CaO protective layers

Rakhwan Kim; Younghyun Kim; Jinhui Cho; Jong-Wan Park

J. Vac. Sci. Technol. A 18, 2493–2496 (2000) https://doi.org/10.1116/1.1287151

Abstract

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Dynamical behavior of hydrogen molecule on GaAs(001) surface

Masafumi Ohashi; Masashi Ozeki; Jie Cui

J. Vac. Sci. Technol. A 18, 2497–2502 (2000) https://doi.org/10.1116/1.1287148

Abstract

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Analysis of silicon–oxide–silicon nitride stacks by medium-energy ion scattering

D. Landheer; P. Ma; W. N. Lennard; I. V. Mitchell; C. McNorgan

J. Vac. Sci. Technol. A 18, 2503–2506 (2000) https://doi.org/10.1116/1.1285991

Abstract

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Three-dimensional simulation of film microstructure produced by glancing angle deposition

T. Smy; D. Vick; M. J. Brett; S. K. Dew; A. T. Wu; J. C. Sit; K. D. Harris

J. Vac. Sci. Technol. A 18, 2507–2512 (2000) https://doi.org/10.1116/1.1286394

Abstract

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Potassium reaction on sulfur-passivated GaAs(100)

J. M. Seo

J. Vac. Sci. Technol. A 18, 2513–2516 (2000) https://doi.org/10.1116/1.1286390

Abstract

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The role of oxygen in the intrinsic tensile residual stress evolution in sputter-deposited thin metal films

A. Misra; M. Nastasi

J. Vac. Sci. Technol. A 18, 2517–2521 (2000) https://doi.org/10.1116/1.1286393

Abstract

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Interfacial silicon oxide formation during oxygen annealing of ${Ta}_{2} O_{5}$ thin films on Si: Oxygen isotope labeling

H. J. Park; A. Mao; D.-L. Kwong; J. M. White

J. Vac. Sci. Technol. A 18, 2522–2526 (2000) https://doi.org/10.1116/1.1286717

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Kinetic investigation of copper film oxidation by spectroscopic ellipsometry and reflectometry

Yao Zhi Hu; Rahul Sharangpani; Sing-Pin Tay

J. Vac. Sci. Technol. A 18, 2527–2532 (2000) https://doi.org/10.1116/1.1287156

Abstract

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Experimental and theoretical study of a differentially pumped absorption gas cell used as a low energy-pass filter in the vacuum ultraviolet photon energy range

B. Mercier; M. Compin; C. Prevost; G. Bellec; R. Thissen; O. Dutuit; L. Nahon

J. Vac. Sci. Technol. A 18, 2533–2541 (2000) https://doi.org/10.1116/1.1288196

Abstract

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Alternative ${NH}_{4} F/HCl$ solution for ultraclean Si(001) surface

T. H. Bok; J. H. Ye; Sam F. Y. Li

J. Vac. Sci. Technol. A 18, 2542–2548 (2000) https://doi.org/10.1116/1.1286201

Abstract

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Evacuation and outgassing of vacuum glazing

N. Ng; R. E. Collins

J. Vac. Sci. Technol. A 18, 2549–2562 (2000) https://doi.org/10.1116/1.1289700

Abstract

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Effects of chemical etching with hydrochloric acid on a glass surface

H. K. Jang; Y. D. Chung; S. W. Whangbo; I. W. Lyo; C. N. Whang; S. J. Lee; Seok Lee

J. Vac. Sci. Technol. A 18, 2563–2567 (2000) https://doi.org/10.1116/1.1287445

Abstract

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Recommended practice for calibrating vacuum gauges of the thermal conductivity type

R. E. Ellefson; A. P. Miiller

J. Vac. Sci. Technol. A 18, 2568–2577 (2000) https://doi.org/10.1116/1.1286024

Abstract

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Molecular adsorption of ${CH}_{3} CN$ and $C_{5} H_{5} N$ on $Si(111)7×7$

N. Shirota; S. Yagi; M. Taniguchi; E. Hashimoto

J. Vac. Sci. Technol. A 18, 2578–2580 (2000) https://doi.org/10.1116/1.1286392

Abstract

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Low cost, mechanically refrigerated diffusion pump baffle for ultrahigh vacuum chambers

Steven Chambreau; Monica L. Neuburger; Tom Ho; Brian Funk; David Pullman

J. Vac. Sci. Technol. A 18, 2581–2585 (2000) https://doi.org/10.1116/1.1285995

Abstract

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Thickness effects in ultrathin film chemical vapor deposition polymers

Jay J. Senkevich

J. Vac. Sci. Technol. A 18, 2586–2590 (2000) https://doi.org/10.1116/1.1286549

Abstract

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BRIEF REPORTS AND COMMENTS

Aligned silicon carbide nanocrystals at the ${SiO}_{2} /Si$ interface by C implantation into ${SiO}_{2}$ matrices

Chang-Ming Chen; Xinquan Liu; Zhifeng Li; Guoqin Yu; Dezhan Zhu; Jun Hu; Minqian Li; Wei Lu

J. Vac. Sci. Technol. A 18, 2591–2594 (2000) https://doi.org/10.1116/1.1287150

Abstract

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Sequential turret source-masking system for fabrication of multilayer structures

T. Anthopoulos; T. S. Shafai

J. Vac. Sci. Technol. A 18, 2595–2596 (2000) https://doi.org/10.1116/1.1285989

Abstract

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ERRATA

Erratum: “Copper electroplating for future ultralarge scale integration interconnection” [J. Vac. Sci. Technol. A 18, 656 (2000)]

W. C. Gau; T. C. Chang; Y. S. Lin; J. C. Hu; L. J. Chen; C. Y. Chang; C.-L. Cheng

J. Vac. Sci. Technol. A 18, 2597 (2000) https://doi.org/10.1116/1.1286102

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RAPID COMMUNICATIONS

Fabrication of micro and submicro Y–Ba–Cu–O particles by excimer laser processing

G. P. Luo; C. L. Chen; S. Y. Chen; J. Shen; Y. S. Wang; Y. Y. Sun; C. W. Chu; Y. Liou; N. B. Ming

J. Vac. Sci. Technol. A 18, 2598–2602 (2000) https://doi.org/10.1116/1.1286716

Abstract

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SHOP NOTES

Kinematic sample mounting system for accurate positioning of transferrable samples

Adam Lapicki; Kevin J. Boyd; Scott L. Anderson

J. Vac. Sci. Technol. A 18, 2603–2605 (2000) https://doi.org/10.1116/1.1289698

Abstract

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Electrochemical fluorine source for ultrahigh vacuum dosing

Koji S. Nakayama; T. Sakurai; J. H. Weaver

J. Vac. Sci. Technol. A 18, 2606–2607 (2000) https://doi.org/10.1116/1.1289543

Abstract

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Effects of oxygen gettering and target mode change in the formation process of reactively sputtered Pt oxide thin films

Y. Abe; M. Kawamura; K. Sasaki

J. Vac. Sci. Technol. A 18, 2608–2612 (2000) https://doi.org/10.1116/1.1288192

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