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Issues
September 2000
ISSN 0734-2101
EISSN 1520-8559
REGULAR ARTICLES
Plasma etch/deposition modeling: A new dynamically coupled multiscale code and comparison with experiment
J. Vac. Sci. Technol. A 18, 2045–2052 (2000)
https://doi.org/10.1116/1.1285990
Analysis of chlorine-containing plasmas applied in III/V semiconductor processing
J. Vac. Sci. Technol. A 18, 2053–2061 (2000)
https://doi.org/10.1116/1.1286072
Effect of magnetic field configuration in the cathodic polymerization systems with two anode magnetrons
J. Vac. Sci. Technol. A 18, 2062–2066 (2000)
https://doi.org/10.1116/1.1286548
The role of feedgas chemistry, mask material, and processing parameters in profile evolution during plasma etching of Si(100)
J. Vac. Sci. Technol. A 18, 2067–2079 (2000)
https://doi.org/10.1116/1.1286025
Etching of film by chlorine plasma
J. Vac. Sci. Technol. A 18, 2080–2084 (2000)
https://doi.org/10.1116/1.1286026
Crystallization of amorphous-silicon films with seed layers of microcrystalline silicon by plasma heating
J. Vac. Sci. Technol. A 18, 2085–2089 (2000)
https://doi.org/10.1116/1.1289538
Etching of Si through a thick condensed layer
J. Vac. Sci. Technol. A 18, 2090–2097 (2000)
https://doi.org/10.1116/1.1288194
Characteristics of ZnO:Cr thin films deposited by spray pyrolysis
J. Vac. Sci. Technol. A 18, 2098–2101 (2000)
https://doi.org/10.1116/1.1287444
Gas utilization in remote plasma cleaning and stripping applications
J. Vac. Sci. Technol. A 18, 2102–2107 (2000)
https://doi.org/10.1116/1.1287442
Plasma injection with helicon sources
J. Vac. Sci. Technol. A 18, 2108–2115 (2000)
https://doi.org/10.1116/1.1289537
Fluorocarbon polymer deposition kinetics in a low-pressure, high-density, inductively coupled plasma reactor
J. Vac. Sci. Technol. A 18, 2122–2129 (2000)
https://doi.org/10.1116/1.1286396
Interactions between plasmas in ionized physical vapor deposition discharges
J. Vac. Sci. Technol. A 18, 2137–2142 (2000)
https://doi.org/10.1116/1.1286360
Investigation of Si-doped diamond-like carbon films synthesized by plasma immersion ion processing
J. Vac. Sci. Technol. A 18, 2143–2148 (2000)
https://doi.org/10.1116/1.1286141
Studies on the optimum condition for the formation of a neutral loop discharge plasma
J. Vac. Sci. Technol. A 18, 2149–2152 (2000)
https://doi.org/10.1116/1.1286391
Film growth precursors in a remote plasma used for high-rate deposition of hydrogenated amorphous silicon
J. Vac. Sci. Technol. A 18, 2153–2163 (2000)
https://doi.org/10.1116/1.1289541
-based dry etching of GaN films under inductively coupled plasma conditions
Y. H. Im; J. S. Park; Y. B. Hahn; K. S. Nahm; Y-.S. Lee; B. C. Cho; K. Y. Lim; H. J. Lee; S. J. Pearton
J. Vac. Sci. Technol. A 18, 2169–2174 (2000)
https://doi.org/10.1116/1.1286363
Investigation of dilute discharges for application to SiC reactive ion etching
J. Vac. Sci. Technol. A 18, 2175–2184 (2000)
https://doi.org/10.1116/1.1286361
Hysteresis and mode transitions in a low-frequency inductively coupled plasma
J. Vac. Sci. Technol. A 18, 2185–2197 (2000)
https://doi.org/10.1116/1.1286142
Particle transport in a parallel-plate semiconductor reactor: Chamber modification and design criterion for enhanced process cleanliness
J. Vac. Sci. Technol. A 18, 2198–2206 (2000)
https://doi.org/10.1116/1.1288193
Electron temperature, density, and metastable-atom density of argon electron–cyclotron-resonance plasma discharged by 7.0, 8.0, and 9.4 GHz microwaves
J. Vac. Sci. Technol. A 18, 2207–2212 (2000)
https://doi.org/10.1116/1.1289542
Diagnosis of positive ions from the near-cathode region in a high-voltage pulsed corona discharge plasma
J. Vac. Sci. Technol. A 18, 2213–2216 (2000)
https://doi.org/10.1116/1.1286362
Abatement of in rf and microwave plasma reactors
J. Vac. Sci. Technol. A 18, 2217–2223 (2000)
https://doi.org/10.1116/1.1286199
Si etching rate calculation for low pressure high density plasma source using gas
J. Vac. Sci. Technol. A 18, 2224–2229 (2000)
https://doi.org/10.1116/1.1286197
Structural and mechanical characterization of fluorinated amorphous-carbon films deposited by plasma decomposition of gas mixtures
J. Vac. Sci. Technol. A 18, 2230–2238 (2000)
https://doi.org/10.1116/1.1289540
Er deposition in the submonolayer range on weakly boron-doped Si(111) surface
J. Vac. Sci. Technol. A 18, 2239–2243 (2000)
https://doi.org/10.1116/1.1285934
Iron oxide thin films prepared by ion beam induced chemical vapor deposition: Structural characterization by infrared spectroscopy
J. Vac. Sci. Technol. A 18, 2244–2248 (2000)
https://doi.org/10.1116/1.1286198
Nickel precipitation at nanocavities in separation by implantation of oxygen
J. Vac. Sci. Technol. A 18, 2249–2253 (2000)
https://doi.org/10.1116/1.1288138
How low-energy ions can enhance depositions on low-K dielectrics
J. Vac. Sci. Technol. A 18, 2254–2261 (2000)
https://doi.org/10.1116/1.1285933
Effect of a thin Ni layer on hydrogenation and thermal release characteristics of Ti thin films
J. Vac. Sci. Technol. A 18, 2262–2266 (2000)
https://doi.org/10.1116/1.1285994
Damage in diamond produced by analysis beam
J. Vac. Sci. Technol. A 18, 2267–2270 (2000)
https://doi.org/10.1116/1.1288941
Damage of InP (110) induced by low energy and bombardment
J. Vac. Sci. Technol. A 18, 2271–2276 (2000)
https://doi.org/10.1116/1.1286103
Effects of increasing nitrogen concentration on the structure of carbon nitride films deposited by ion beam assisted deposition
J. Vac. Sci. Technol. A 18, 2277–2287 (2000)
https://doi.org/10.1116/1.1285993
ZnO:Zn phosphor thin films prepared by ion beam sputtering
J. Vac. Sci. Technol. A 18, 2295–2301 (2000)
https://doi.org/10.1116/1.1289694
Characterization studies of diamond-like carbon films grown using a saddle-field fast-atom-beam source
J. Vac. Sci. Technol. A 18, 2302–2311 (2000)
https://doi.org/10.1116/1.1289699
Ti, TiN, and Ti/TiN thin films prepared by ion beam assisted deposition as diffusion barriers between Cu and Si
J. Vac. Sci. Technol. A 18, 2312–2318 (2000)
https://doi.org/10.1116/1.1288942
Interaction of alcohols with films
J. Vac. Sci. Technol. A 18, 2319–2326 (2000)
https://doi.org/10.1116/1.1287149
Fabrication of ZnO-doped thin films by radio frequency magnetron sputtering
J. Vac. Sci. Technol. A 18, 2327–2332 (2000)
https://doi.org/10.1116/1.1286143
Low-temperature magnetron sputter-deposition, hardness, and electrical resistivity of amorphous and crystalline alumina thin films
J. Vac. Sci. Technol. A 18, 2333–2338 (2000)
https://doi.org/10.1116/1.1286715
Epitaxial growth and physical properties of Permalloy film deposited on MgO(001) by biased dc plasma sputtering
J. Vac. Sci. Technol. A 18, 2339–2343 (2000)
https://doi.org/10.1116/1.1286200
Growth, structure, and mechanical properties of films deposited by dc magnetron sputtering in discharges
Niklas Hellgren; Mats P. Johansson; Björgvin Hjörvarsson; Esteban Broitman; Mattias Östblom; Bo Liedberg; Lars Hultman; Jan-Eric Sundgren
J. Vac. Sci. Technol. A 18, 2349–2358 (2000)
https://doi.org/10.1116/1.1286395
Chemical structure change of thin films prepared from nonpolymeric organic compounds by pulsed laser deposition
Takahiro Kajitani; Osamu Tanaka; Yoshihiro Tange; Hideaki Matsuda; Toshihiko Ooie; Tetsuo Yano; Masafumi Yoneda; Munehide Katsumura; Yoshifumi Suzaki
J. Vac. Sci. Technol. A 18, 2359–2362 (2000)
https://doi.org/10.1116/1.1289695
Laser-induced photodetachment in high-density low-pressure magnetoplasmas
J. Vac. Sci. Technol. A 18, 2363–2371 (2000)
https://doi.org/10.1116/1.1285935
Evaporation and ion assisted deposition of coatings: Some key points for high power laser applications
J. Vac. Sci. Technol. A 18, 2372–2377 (2000)
https://doi.org/10.1116/1.1287153
Influence of oxygen background pressure on the structure and properties of epitaxial heterostructures grown by pulsed laser deposition
J. Vac. Sci. Technol. A 18, 2378–2383 (2000)
https://doi.org/10.1116/1.1287446
The deposition behavior of thin film by metalorganic chemical vapor deposition method
J. Vac. Sci. Technol. A 18, 2384–2388 (2000)
https://doi.org/10.1116/1.1287154
Properties of nitrogen doped silicon films deposited by low-pressure chemical vapor deposition from silane and ammonia
J. Vac. Sci. Technol. A 18, 2389–2393 (2000)
https://doi.org/10.1116/1.1286714
Comparison of titanium oxide films grown on bare glass and boiled glass in 50% by metal-organic chemical vapor deposition
H. K. Jang; S. W. Whangbo; Y. D. Chung; T. G. Kim; H. B. Kim; I. W. Lyo; C. N. Whang; C. H. Wang; D. J. Choi; T. K. Kim; H.-S. Lee
J. Vac. Sci. Technol. A 18, 2394–2399 (2000)
https://doi.org/10.1116/1.1288137
Chemical vapor deposition of Ru thin films by direct liquid injection of (OD=octanedionate)
Jung-Hyun Lee; Joo-Young Kim; Shi-Woo Rhee; DooYoung Yang; Dong-Hyun Kim; Cheol-Hoon Yang; Young-Ki Han; Chul-Ju Hwang
J. Vac. Sci. Technol. A 18, 2400–2403 (2000)
https://doi.org/10.1116/1.1289693
Variable angle spectroscopic ellipsometry of fluorocarbon films from hot filament chemical vapor deposition
J. Vac. Sci. Technol. A 18, 2404–2411 (2000)
https://doi.org/10.1116/1.1288191
Effect of oxygen stoichiometry on the ferroelectric property of epitaxial all-oxide thin-film capacitors
J. Vac. Sci. Technol. A 18, 2412–2416 (2000)
https://doi.org/10.1116/1.1288195
Preparation and characterization of clean, single-crystalline films on W(110)
J. Vac. Sci. Technol. A 18, 2417–2431 (2000)
https://doi.org/10.1116/1.1286073
Two-step deposition process of piezoelectric ZnO film and its application for film bulk acoustic resonators
J. Vac. Sci. Technol. A 18, 2432–2436 (2000)
https://doi.org/10.1116/1.1287443
Epitaxial growth of La–Ca–Mn–O thin film on out-of-plane twinned
J. Vac. Sci. Technol. A 18, 2437–2440 (2000)
https://doi.org/10.1116/1.1286713
Reactivity of heteropolyanions toward GaAs compound
J. Vac. Sci. Technol. A 18, 2441–2447 (2000)
https://doi.org/10.1116/1.1289539
Growth and characterization of GaTlAs
J. Vac. Sci. Technol. A 18, 2448–2451 (2000)
https://doi.org/10.1116/1.1286023
Optical spectroscopic analyses of OH incorporation into films deposited from /tetraethoxysilane plasmas
J. Vac. Sci. Technol. A 18, 2452–2458 (2000)
https://doi.org/10.1116/1.1287152
Mass spectrometry study during the vapor deposition of poly-para-xylylene thin films
J. Vac. Sci. Technol. A 18, 2459–2465 (2000)
https://doi.org/10.1116/1.1289773
Red phosphor as potential field emission display material
J. Vac. Sci. Technol. A 18, 2472–2476 (2000)
https://doi.org/10.1116/1.1288197
Atomic force microscopy investigation of nanometer-scale modifications of polymer morphology caused by ultraviolet irradiation
J. Vac. Sci. Technol. A 18, 2477–2481 (2000)
https://doi.org/10.1116/1.1287441
Spectra mapping of scanning tunneling microscope-induced light from electrochemically deposited Ag films on Au
J. Vac. Sci. Technol. A 18, 2482–2485 (2000)
https://doi.org/10.1116/1.1287155
Growth of diamond films on Ti–6Al–4V substrates and determination of residual stresses using Raman spectroscopy
J. Vac. Sci. Technol. A 18, 2486–2492 (2000)
https://doi.org/10.1116/1.1285992
Luminous efficiency and secondary electron emission characteristics of alternating current plasma display panels with MgO–SrO–CaO protective layers
J. Vac. Sci. Technol. A 18, 2493–2496 (2000)
https://doi.org/10.1116/1.1287151
Dynamical behavior of hydrogen molecule on GaAs(001) surface
J. Vac. Sci. Technol. A 18, 2497–2502 (2000)
https://doi.org/10.1116/1.1287148
Analysis of silicon–oxide–silicon nitride stacks by medium-energy ion scattering
J. Vac. Sci. Technol. A 18, 2503–2506 (2000)
https://doi.org/10.1116/1.1285991
Three-dimensional simulation of film microstructure produced by glancing angle deposition
J. Vac. Sci. Technol. A 18, 2507–2512 (2000)
https://doi.org/10.1116/1.1286394
The role of oxygen in the intrinsic tensile residual stress evolution in sputter-deposited thin metal films
J. Vac. Sci. Technol. A 18, 2517–2521 (2000)
https://doi.org/10.1116/1.1286393
Interfacial silicon oxide formation during oxygen annealing of thin films on Si: Oxygen isotope labeling
J. Vac. Sci. Technol. A 18, 2522–2526 (2000)
https://doi.org/10.1116/1.1286717
Kinetic investigation of copper film oxidation by spectroscopic ellipsometry and reflectometry
J. Vac. Sci. Technol. A 18, 2527–2532 (2000)
https://doi.org/10.1116/1.1287156
Alternative solution for ultraclean Si(001) surface
J. Vac. Sci. Technol. A 18, 2542–2548 (2000)
https://doi.org/10.1116/1.1286201
Evacuation and outgassing of vacuum glazing
J. Vac. Sci. Technol. A 18, 2549–2562 (2000)
https://doi.org/10.1116/1.1289700
Effects of chemical etching with hydrochloric acid on a glass surface
J. Vac. Sci. Technol. A 18, 2563–2567 (2000)
https://doi.org/10.1116/1.1287445
Recommended practice for calibrating vacuum gauges of the thermal conductivity type
J. Vac. Sci. Technol. A 18, 2568–2577 (2000)
https://doi.org/10.1116/1.1286024
Molecular adsorption of and on
J. Vac. Sci. Technol. A 18, 2578–2580 (2000)
https://doi.org/10.1116/1.1286392
Low cost, mechanically refrigerated diffusion pump baffle for ultrahigh vacuum chambers
J. Vac. Sci. Technol. A 18, 2581–2585 (2000)
https://doi.org/10.1116/1.1285995
Thickness effects in ultrathin film chemical vapor deposition polymers
J. Vac. Sci. Technol. A 18, 2586–2590 (2000)
https://doi.org/10.1116/1.1286549
BRIEF REPORTS AND COMMENTS
Aligned silicon carbide nanocrystals at the interface by C implantation into matrices
J. Vac. Sci. Technol. A 18, 2591–2594 (2000)
https://doi.org/10.1116/1.1287150
Sequential turret source-masking system for fabrication of multilayer structures
J. Vac. Sci. Technol. A 18, 2595–2596 (2000)
https://doi.org/10.1116/1.1285989
ERRATA
Erratum: “Copper electroplating for future ultralarge scale integration interconnection” [J. Vac. Sci. Technol. A 18, 656 (2000)]
J. Vac. Sci. Technol. A 18, 2597 (2000)
https://doi.org/10.1116/1.1286102
RAPID COMMUNICATIONS
Fabrication of micro and submicro Y–Ba–Cu–O particles by excimer laser processing
J. Vac. Sci. Technol. A 18, 2598–2602 (2000)
https://doi.org/10.1116/1.1286716
SHOP NOTES
Kinematic sample mounting system for accurate positioning of transferrable samples
J. Vac. Sci. Technol. A 18, 2603–2605 (2000)
https://doi.org/10.1116/1.1289698
Electrochemical fluorine source for ultrahigh vacuum dosing
J. Vac. Sci. Technol. A 18, 2606–2607 (2000)
https://doi.org/10.1116/1.1289543
Effects of oxygen gettering and target mode change in the formation process of reactively sputtered Pt oxide thin films
J. Vac. Sci. Technol. A 18, 2608–2612 (2000)
https://doi.org/10.1116/1.1288192