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Issues
September 2000
ISSN 0734-2101
EISSN 1520-8559
REGULAR ARTICLES
Plasma etch/deposition modeling: A new dynamically coupled multiscale code and comparison with experiment
J. Vac. Sci. Technol. A 18, 2045–2052 (2000)
https://doi.org/10.1116/1.1285990
Analysis of chlorine-containing plasmas applied in III/V semiconductor processing
J. Vac. Sci. Technol. A 18, 2053–2061 (2000)
https://doi.org/10.1116/1.1286072
Effect of magnetic field configuration in the cathodic polymerization systems with two anode magnetrons
J. Vac. Sci. Technol. A 18, 2062–2066 (2000)
https://doi.org/10.1116/1.1286548
The role of feedgas chemistry, mask material, and processing parameters in profile evolution during plasma etching of Si(100)
J. Vac. Sci. Technol. A 18, 2067–2079 (2000)
https://doi.org/10.1116/1.1286025
Etching of film by chlorine plasma
J. Vac. Sci. Technol. A 18, 2080–2084 (2000)
https://doi.org/10.1116/1.1286026
Crystallization of amorphous-silicon films with seed layers of microcrystalline silicon by plasma heating
J. Vac. Sci. Technol. A 18, 2085–2089 (2000)
https://doi.org/10.1116/1.1289538
Etching of Si through a thick condensed layer
J. Vac. Sci. Technol. A 18, 2090–2097 (2000)
https://doi.org/10.1116/1.1288194
Characteristics of ZnO:Cr thin films deposited by spray pyrolysis
J. Vac. Sci. Technol. A 18, 2098–2101 (2000)
https://doi.org/10.1116/1.1287444
Gas utilization in remote plasma cleaning and stripping applications
J. Vac. Sci. Technol. A 18, 2102–2107 (2000)
https://doi.org/10.1116/1.1287442
Powder formation in germane–silane plasmas
J. Vac. Sci. Technol. A 18, 2116–2121 (2000)
https://doi.org/10.1116/1.1286022
Fluorocarbon polymer deposition kinetics in a low-pressure, high-density, inductively coupled plasma reactor
J. Vac. Sci. Technol. A 18, 2122–2129 (2000)
https://doi.org/10.1116/1.1286396
Interactions between plasmas in ionized physical vapor deposition discharges
J. Vac. Sci. Technol. A 18, 2137–2142 (2000)
https://doi.org/10.1116/1.1286360
Investigation of Si-doped diamond-like carbon films synthesized by plasma immersion ion processing
J. Vac. Sci. Technol. A 18, 2143–2148 (2000)
https://doi.org/10.1116/1.1286141
Studies on the optimum condition for the formation of a neutral loop discharge plasma
J. Vac. Sci. Technol. A 18, 2149–2152 (2000)
https://doi.org/10.1116/1.1286391
Film growth precursors in a remote plasma used for high-rate deposition of hydrogenated amorphous silicon
J. Vac. Sci. Technol. A 18, 2153–2163 (2000)
https://doi.org/10.1116/1.1289541
-based dry etching of GaN films under inductively coupled plasma conditions
Y. H. Im; J. S. Park; Y. B. Hahn; K. S. Nahm; Y-.S. Lee; B. C. Cho; K. Y. Lim; H. J. Lee; S. J. Pearton
J. Vac. Sci. Technol. A 18, 2169–2174 (2000)
https://doi.org/10.1116/1.1286363
Investigation of dilute discharges for application to SiC reactive ion etching
J. Vac. Sci. Technol. A 18, 2175–2184 (2000)
https://doi.org/10.1116/1.1286361
Hysteresis and mode transitions in a low-frequency inductively coupled plasma
J. Vac. Sci. Technol. A 18, 2185–2197 (2000)
https://doi.org/10.1116/1.1286142
Particle transport in a parallel-plate semiconductor reactor: Chamber modification and design criterion for enhanced process cleanliness
J. Vac. Sci. Technol. A 18, 2198–2206 (2000)
https://doi.org/10.1116/1.1288193
Electron temperature, density, and metastable-atom density of argon electron–cyclotron-resonance plasma discharged by 7.0, 8.0, and 9.4 GHz microwaves
J. Vac. Sci. Technol. A 18, 2207–2212 (2000)
https://doi.org/10.1116/1.1289542
Diagnosis of positive ions from the near-cathode region in a high-voltage pulsed corona discharge plasma
J. Vac. Sci. Technol. A 18, 2213–2216 (2000)
https://doi.org/10.1116/1.1286362
Si etching rate calculation for low pressure high density plasma source using gas
J. Vac. Sci. Technol. A 18, 2224–2229 (2000)
https://doi.org/10.1116/1.1286197
Structural and mechanical characterization of fluorinated amorphous-carbon films deposited by plasma decomposition of gas mixtures
J. Vac. Sci. Technol. A 18, 2230–2238 (2000)
https://doi.org/10.1116/1.1289540
Er deposition in the submonolayer range on weakly boron-doped Si(111) surface
J. Vac. Sci. Technol. A 18, 2239–2243 (2000)
https://doi.org/10.1116/1.1285934
Iron oxide thin films prepared by ion beam induced chemical vapor deposition: Structural characterization by infrared spectroscopy
J. Vac. Sci. Technol. A 18, 2244–2248 (2000)
https://doi.org/10.1116/1.1286198
Nickel precipitation at nanocavities in separation by implantation of oxygen
J. Vac. Sci. Technol. A 18, 2249–2253 (2000)
https://doi.org/10.1116/1.1288138
How low-energy ions can enhance depositions on low-K dielectrics
J. Vac. Sci. Technol. A 18, 2254–2261 (2000)
https://doi.org/10.1116/1.1285933
Effect of a thin Ni layer on hydrogenation and thermal release characteristics of Ti thin films
J. Vac. Sci. Technol. A 18, 2262–2266 (2000)
https://doi.org/10.1116/1.1285994
Damage of InP (110) induced by low energy and bombardment
J. Vac. Sci. Technol. A 18, 2271–2276 (2000)
https://doi.org/10.1116/1.1286103
Effects of increasing nitrogen concentration on the structure of carbon nitride films deposited by ion beam assisted deposition
J. Vac. Sci. Technol. A 18, 2277–2287 (2000)
https://doi.org/10.1116/1.1285993
ZnO:Zn phosphor thin films prepared by ion beam sputtering
J. Vac. Sci. Technol. A 18, 2295–2301 (2000)
https://doi.org/10.1116/1.1289694
Characterization studies of diamond-like carbon films grown using a saddle-field fast-atom-beam source
J. Vac. Sci. Technol. A 18, 2302–2311 (2000)
https://doi.org/10.1116/1.1289699
Ti, TiN, and Ti/TiN thin films prepared by ion beam assisted deposition as diffusion barriers between Cu and Si
J. Vac. Sci. Technol. A 18, 2312–2318 (2000)
https://doi.org/10.1116/1.1288942
Fabrication of ZnO-doped thin films by radio frequency magnetron sputtering
J. Vac. Sci. Technol. A 18, 2327–2332 (2000)
https://doi.org/10.1116/1.1286143
Low-temperature magnetron sputter-deposition, hardness, and electrical resistivity of amorphous and crystalline alumina thin films
J. Vac. Sci. Technol. A 18, 2333–2338 (2000)
https://doi.org/10.1116/1.1286715
Epitaxial growth and physical properties of Permalloy film deposited on MgO(001) by biased dc plasma sputtering
J. Vac. Sci. Technol. A 18, 2339–2343 (2000)
https://doi.org/10.1116/1.1286200
Growth, structure, and mechanical properties of films deposited by dc magnetron sputtering in discharges
Niklas Hellgren; Mats P. Johansson; Björgvin Hjörvarsson; Esteban Broitman; Mattias Östblom; Bo Liedberg; Lars Hultman; Jan-Eric Sundgren
J. Vac. Sci. Technol. A 18, 2349–2358 (2000)
https://doi.org/10.1116/1.1286395
Chemical structure change of thin films prepared from nonpolymeric organic compounds by pulsed laser deposition
Takahiro Kajitani; Osamu Tanaka; Yoshihiro Tange; Hideaki Matsuda; Toshihiko Ooie; Tetsuo Yano; Masafumi Yoneda; Munehide Katsumura; Yoshifumi Suzaki
J. Vac. Sci. Technol. A 18, 2359–2362 (2000)
https://doi.org/10.1116/1.1289695
Laser-induced photodetachment in high-density low-pressure magnetoplasmas
J. Vac. Sci. Technol. A 18, 2363–2371 (2000)
https://doi.org/10.1116/1.1285935
Evaporation and ion assisted deposition of coatings: Some key points for high power laser applications
J. Vac. Sci. Technol. A 18, 2372–2377 (2000)
https://doi.org/10.1116/1.1287153
Influence of oxygen background pressure on the structure and properties of epitaxial heterostructures grown by pulsed laser deposition
J. Vac. Sci. Technol. A 18, 2378–2383 (2000)
https://doi.org/10.1116/1.1287446
The deposition behavior of thin film by metalorganic chemical vapor deposition method
J. Vac. Sci. Technol. A 18, 2384–2388 (2000)
https://doi.org/10.1116/1.1287154
Properties of nitrogen doped silicon films deposited by low-pressure chemical vapor deposition from silane and ammonia
J. Vac. Sci. Technol. A 18, 2389–2393 (2000)
https://doi.org/10.1116/1.1286714
Comparison of titanium oxide films grown on bare glass and boiled glass in 50% by metal-organic chemical vapor deposition
H. K. Jang; S. W. Whangbo; Y. D. Chung; T. G. Kim; H. B. Kim; I. W. Lyo; C. N. Whang; C. H. Wang; D. J. Choi; T. K. Kim; H.-S. Lee
J. Vac. Sci. Technol. A 18, 2394–2399 (2000)
https://doi.org/10.1116/1.1288137
Chemical vapor deposition of Ru thin films by direct liquid injection of (OD=octanedionate)
Jung-Hyun Lee; Joo-Young Kim; Shi-Woo Rhee; DooYoung Yang; Dong-Hyun Kim; Cheol-Hoon Yang; Young-Ki Han; Chul-Ju Hwang
J. Vac. Sci. Technol. A 18, 2400–2403 (2000)
https://doi.org/10.1116/1.1289693
Variable angle spectroscopic ellipsometry of fluorocarbon films from hot filament chemical vapor deposition
J. Vac. Sci. Technol. A 18, 2404–2411 (2000)
https://doi.org/10.1116/1.1288191
Effect of oxygen stoichiometry on the ferroelectric property of epitaxial all-oxide thin-film capacitors
J. Vac. Sci. Technol. A 18, 2412–2416 (2000)
https://doi.org/10.1116/1.1288195
Preparation and characterization of clean, single-crystalline films on W(110)
J. Vac. Sci. Technol. A 18, 2417–2431 (2000)
https://doi.org/10.1116/1.1286073
Two-step deposition process of piezoelectric ZnO film and its application for film bulk acoustic resonators
J. Vac. Sci. Technol. A 18, 2432–2436 (2000)
https://doi.org/10.1116/1.1287443
Epitaxial growth of La–Ca–Mn–O thin film on out-of-plane twinned
J. Vac. Sci. Technol. A 18, 2437–2440 (2000)
https://doi.org/10.1116/1.1286713
Reactivity of heteropolyanions toward GaAs compound
J. Vac. Sci. Technol. A 18, 2441–2447 (2000)
https://doi.org/10.1116/1.1289539
Optical spectroscopic analyses of OH incorporation into films deposited from /tetraethoxysilane plasmas
J. Vac. Sci. Technol. A 18, 2452–2458 (2000)
https://doi.org/10.1116/1.1287152
Mass spectrometry study during the vapor deposition of poly-para-xylylene thin films
J. Vac. Sci. Technol. A 18, 2459–2465 (2000)
https://doi.org/10.1116/1.1289773
Atomic force microscopy investigation of nanometer-scale modifications of polymer morphology caused by ultraviolet irradiation
J. Vac. Sci. Technol. A 18, 2477–2481 (2000)
https://doi.org/10.1116/1.1287441
Spectra mapping of scanning tunneling microscope-induced light from electrochemically deposited Ag films on Au
J. Vac. Sci. Technol. A 18, 2482–2485 (2000)
https://doi.org/10.1116/1.1287155
Growth of diamond films on Ti–6Al–4V substrates and determination of residual stresses using Raman spectroscopy
J. Vac. Sci. Technol. A 18, 2486–2492 (2000)
https://doi.org/10.1116/1.1285992
Luminous efficiency and secondary electron emission characteristics of alternating current plasma display panels with MgO–SrO–CaO protective layers
J. Vac. Sci. Technol. A 18, 2493–2496 (2000)
https://doi.org/10.1116/1.1287151
Dynamical behavior of hydrogen molecule on GaAs(001) surface
J. Vac. Sci. Technol. A 18, 2497–2502 (2000)
https://doi.org/10.1116/1.1287148
Analysis of silicon–oxide–silicon nitride stacks by medium-energy ion scattering
J. Vac. Sci. Technol. A 18, 2503–2506 (2000)
https://doi.org/10.1116/1.1285991
Three-dimensional simulation of film microstructure produced by glancing angle deposition
J. Vac. Sci. Technol. A 18, 2507–2512 (2000)
https://doi.org/10.1116/1.1286394
The role of oxygen in the intrinsic tensile residual stress evolution in sputter-deposited thin metal films
J. Vac. Sci. Technol. A 18, 2517–2521 (2000)
https://doi.org/10.1116/1.1286393
Interfacial silicon oxide formation during oxygen annealing of thin films on Si: Oxygen isotope labeling
J. Vac. Sci. Technol. A 18, 2522–2526 (2000)
https://doi.org/10.1116/1.1286717
Kinetic investigation of copper film oxidation by spectroscopic ellipsometry and reflectometry
J. Vac. Sci. Technol. A 18, 2527–2532 (2000)
https://doi.org/10.1116/1.1287156
Effects of chemical etching with hydrochloric acid on a glass surface
J. Vac. Sci. Technol. A 18, 2563–2567 (2000)
https://doi.org/10.1116/1.1287445
Recommended practice for calibrating vacuum gauges of the thermal conductivity type
J. Vac. Sci. Technol. A 18, 2568–2577 (2000)
https://doi.org/10.1116/1.1286024
Molecular adsorption of and on
J. Vac. Sci. Technol. A 18, 2578–2580 (2000)
https://doi.org/10.1116/1.1286392
Low cost, mechanically refrigerated diffusion pump baffle for ultrahigh vacuum chambers
J. Vac. Sci. Technol. A 18, 2581–2585 (2000)
https://doi.org/10.1116/1.1285995
BRIEF REPORTS AND COMMENTS
Aligned silicon carbide nanocrystals at the interface by C implantation into matrices
J. Vac. Sci. Technol. A 18, 2591–2594 (2000)
https://doi.org/10.1116/1.1287150
Sequential turret source-masking system for fabrication of multilayer structures
J. Vac. Sci. Technol. A 18, 2595–2596 (2000)
https://doi.org/10.1116/1.1285989
ERRATA
Erratum: “Copper electroplating for future ultralarge scale integration interconnection” [J. Vac. Sci. Technol. A 18, 656 (2000)]
J. Vac. Sci. Technol. A 18, 2597 (2000)
https://doi.org/10.1116/1.1286102
RAPID COMMUNICATIONS
Fabrication of micro and submicro Y–Ba–Cu–O particles by excimer laser processing
J. Vac. Sci. Technol. A 18, 2598–2602 (2000)
https://doi.org/10.1116/1.1286716
SHOP NOTES
Kinematic sample mounting system for accurate positioning of transferrable samples
J. Vac. Sci. Technol. A 18, 2603–2605 (2000)
https://doi.org/10.1116/1.1289698
Electrochemical fluorine source for ultrahigh vacuum dosing
J. Vac. Sci. Technol. A 18, 2606–2607 (2000)
https://doi.org/10.1116/1.1289543
Effects of oxygen gettering and target mode change in the formation process of reactively sputtered Pt oxide thin films
J. Vac. Sci. Technol. A 18, 2608–2612 (2000)
https://doi.org/10.1116/1.1288192
Machine-learning-enabled on-the-fly analysis of RHEED patterns during thin film deposition by molecular beam epitaxy
Tiffany C. Kaspar, Sarah Akers, et al.
Recent trends in thermal atomic layer deposition chemistry
Georgi Popov, Miika Mattinen, et al.
Low-resistivity molybdenum obtained by atomic layer deposition
Kees van der Zouw, Bernhard Y. van der Wel, et al.