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PAPERS FROM THE 46TH NATIONAL SYMPOSIUM OF THE AMERICAN VACUUM SOCIETY

APPLIED SURFACE SCIENCE

Simulation and correction of geometric distortions in scanning Kelvin probe microscopy

Anton Efimov; Sidney R. Cohen

J. Vac. Sci. Technol. A 18, 1051–1055 (2000) https://doi.org/10.1116/1.582472

Abstract

View articletitled, Simulation and correction of geometric distortions in scanning Kelvin probe microscopy

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Secondary ion mass spectrometry and x-ray photoelectron spectroscopy correlation study of nitrided gate oxide

C. A. Bradbury; C. Blackmer

J. Vac. Sci. Technol. A 18, 1056–1060 (2000) https://doi.org/10.1116/1.582299

Abstract

View articletitled, Secondary ion mass spectrometry and x-ray photoelectron spectroscopy correlation study of nitrided gate oxide

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Channeling effects during focused-ion-beam micromachining of copper

J. R. Phillips; D. P. Griffis; P. E. Russell

J. Vac. Sci. Technol. A 18, 1061–1065 (2000) https://doi.org/10.1116/1.582300

Abstract

View articletitled, Channeling effects during focused-ion-beam micromachining of copper

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Oxide-free phosphate films on copper probed by core and valence-band x-ray photoelectron spectroscopic studies in an anaerobic cell

John A. Rotole; Peter M. A. Sherwood

J. Vac. Sci. Technol. A 18, 1066–1071 (2000) https://doi.org/10.1116/1.582301

Abstract

View articletitled, Oxide-free phosphate films on copper probed by core and valence-band x-ray photoelectron spectroscopic studies in an anaerobic cell

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Core-level satellites and outer core-level multiplet splitting in Mn model compounds

A. J. Nelson; John G. Reynolds; Joseph W. Roos

J. Vac. Sci. Technol. A 18, 1072–1076 (2000) https://doi.org/10.1116/1.582302

Abstract

View articletitled, Core-level satellites and outer core-level multiplet splitting in Mn model compounds

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X-ray photoemission spectroscopy and scanning tunneling spectroscopy study on the thermal stability of ${WO}_{3}$ thin films

S. Santucci; C. Cantalini; M. Crivellari; L. Lozzi; L. Ottaviano; M. Passacantando

J. Vac. Sci. Technol. A 18, 1077–1082 (2000) https://doi.org/10.1116/1.582303

Abstract

View articletitled, X-ray photoemission spectroscopy and scanning tunneling spectroscopy study on the thermal stability of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">WO</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub></math> thin films

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Consistent, combined quantitative Auger electron spectroscopy and x-ray photoelectron spectroscopy digital databases: Convergence of theory and experiment

M. P. Seah; I. S. Gilmore; S. J. Spencer

J. Vac. Sci. Technol. A 18, 1083–1088 (2000) https://doi.org/10.1116/1.582304

Abstract

View articletitled, Consistent, combined quantitative Auger electron spectroscopy and x-ray photoelectron spectroscopy digital databases: Convergence of theory and experiment

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Adsorption probabilities of CO on O–ZnO: A molecular beam study

Th. Becker; Ch. Boas; U. Burghaus; Ch. Wöll

J. Vac. Sci. Technol. A 18, 1089–1092 (2000) https://doi.org/10.1116/1.582475

Abstract

View articletitled, Adsorption probabilities of CO on O–ZnO: A molecular beam study

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Compositional heterogeneity in ceria-based mixed oxides observed by x-ray photoelectron spectroscopy

G. W. Graham; C. L. Roe; L. P. Haack; A. M. Straccia

J. Vac. Sci. Technol. A 18, 1093–1095 (2000) https://doi.org/10.1116/1.582305

Abstract

View articletitled, Compositional heterogeneity in ceria-based mixed oxides observed by x-ray photoelectron spectroscopy

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Characterization of zirconia coatings deposited by inductively coupled plasma assisted chemical vapor deposition

P. Colpo; G. Ceccone; P. Sauvageot; M. Baker; F. Rossi

J. Vac. Sci. Technol. A 18, 1096–1101 (2000) https://doi.org/10.1116/1.582306

Abstract

View articletitled, Characterization of zirconia coatings deposited by inductively coupled plasma assisted chemical vapor deposition

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Adhesion effect of polyimide passivation layer on lead-on-chip die attachment

T. Tom Jiang; Cynthia A. Bradbury; Michael Canavan

J. Vac. Sci. Technol. A 18, 1102–1106 (2000) https://doi.org/10.1116/1.582307

Abstract

View articletitled, Adhesion effect of polyimide passivation layer on lead-on-chip die attachment

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Identification of surface chemical functional groups correlated to failure of reverse osmosis polymeric membranes

Sharon Beverly; Sudipta Seal; Seungkwan Hong

J. Vac. Sci. Technol. A 18, 1107–1113 (2000) https://doi.org/10.1116/1.582308

Abstract

View articletitled, Identification of surface chemical functional groups correlated to failure of reverse osmosis polymeric membranes

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Self-assembled monolayers for polymer and protein cationization with time-of-flight secondary ion mass spectrometry

Roger Michel; Reto Luginbühl; Daniel J. Graham; Buddy D. Ratner

J. Vac. Sci. Technol. A 18, 1114–1118 (2000) https://doi.org/10.1116/1.582309

Abstract

View articletitled, Self-assembled monolayers for polymer and protein cationization with time-of-flight secondary ion mass spectrometry

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APPLIED SURFACE SCIENCE II

Sputter deposition and annealing of Ta, ${TaSi}_{x}$ and ${TaB}_{x}$ composite films and their application in next generation lithography masks

Kenneth Racette; Cameron Brooks; C. Richard Guarnieri; Dennis Hendy

J. Vac. Sci. Technol. A 18, 1119–1124 (2000) https://doi.org/10.1116/1.582310

Abstract

View articletitled, Sputter deposition and annealing of Ta, <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">TaSi</mi><mrow><mi>x</mi></mrow></msub></math> and <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">TaB</mi><mrow><mi>x</mi></mrow></msub></math> composite films and their application in next generation lithography masks

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BIOMATERIAL INTERFACES

Model for detection of immobilized superparamagnetic nanosphere assay labels using giant magnetoresistive sensors

Mark Tondra; Marc Porter; Robert J. Lipert

J. Vac. Sci. Technol. A 18, 1125–1129 (2000) https://doi.org/10.1116/1.582476

Abstract

View articletitled, Model for detection of immobilized superparamagnetic nanosphere assay labels using giant magnetoresistive sensors

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ELECTRONIC MATERIALS AND PROCESSING

Selective area growth of GaN on Si(111) by chemical beam epitaxy

Esther Kim; A. Tempez; N. Medelci; I. Berishev; A. Bensaoula

J. Vac. Sci. Technol. A 18, 1130–1134 (2000) https://doi.org/10.1116/1.582311

Abstract

View articletitled, Selective area growth of GaN on Si(111) by chemical beam epitaxy

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High breakdown voltage Au/Pt/GaN Schottky diodes

G. T. Dang; A. P. Zhang; M. M. Mshewa; F. Ren; J.-I. Chyi; C.-M. Lee; C. C. Chuo; G. C. Chi; J. Han; S. N. G. Chu; R. G. Wilson; X. A. Cao; S. J. Pearton

J. Vac. Sci. Technol. A 18, 1135–1138 (2000) https://doi.org/10.1116/1.582312

Abstract

View articletitled, High breakdown voltage Au/Pt/GaN Schottky diodes

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Inductively coupled plasma-induced etch damage of GaN $p-n$ junctions

R. J. Shul; L. Zhang; A. G. Baca; C. G. Willison; J. Han; S. J. Pearton; F. Ren

J. Vac. Sci. Technol. A 18, 1139–1143 (2000) https://doi.org/10.1116/1.582313

Abstract

View articletitled, Inductively coupled plasma-induced etch damage of GaN <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">p-n</mi></math> junctions

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Schottky diode measurements of dry etch damage in n- and p-type GaN

X. A. Cao; A. P. Zhang; G. T. Dang; F. Ren; S. J. Pearton; R. J. Shul; L. Zhang

J. Vac. Sci. Technol. A 18, 1144–1148 (2000) https://doi.org/10.1116/1.582314

Abstract

View articletitled, Schottky diode measurements of dry etch damage in n- and p-type GaN

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Effect of $N_{2}$ discharge treatment on AlGaN/GaN high electron mobility transistor ohmic contacts using inductively coupled plasma

A. P. Zhang; G. T. Dang; F. Ren; J. M. Van Hove; J. J. Klaassen; P. P. Chow; X. A. Cao; S. J. Pearton

J. Vac. Sci. Technol. A 18, 1149–1152 (2000) https://doi.org/10.1116/1.582315

Abstract

View articletitled, Effect of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">N</mi><mrow><mn>2</mn></mrow></msub></math> discharge treatment on AlGaN/GaN high electron mobility transistor ohmic contacts using inductively coupled plasma

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Scanning tunneling microscopy study of surface morphology of Si(111) after synchrotron radiation stimulated desorption of ${SiO}_{2}$

Y. Gao; H. Mekaru; T. Miyamae; T. Urisu

J. Vac. Sci. Technol. A 18, 1153–1157 (2000) https://doi.org/10.1116/1.582316

Abstract

View articletitled, Scanning tunneling microscopy study of surface morphology of Si(111) after synchrotron radiation stimulated desorption of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SiO</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math>

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Investigation of titanium nitride gates for tantalum pentoxide and titanium dioxide dielectrics

D. Gilmer; C. Hobbs; R. Hegde; L. La; O. Adetutu; J. Conner; M. Tiner; L. Prabhu; S. Bagchi; P. Tobin

J. Vac. Sci. Technol. A 18, 1158–1162 (2000) https://doi.org/10.1116/1.582317

Abstract

View articletitled, Investigation of titanium nitride gates for tantalum pentoxide and titanium dioxide dielectrics

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Separate and independent reductions in direct tunneling in oxide/nitride stacks with monolayer interface nitridation associated with the (i) interface nitridation and (ii) increased physical thickness

G. Lucovsky; Y. Wu; H. Niimi; H. Yang; J. Keister; J. E. Rowe

J. Vac. Sci. Technol. A 18, 1163–1168 (2000) https://doi.org/10.1116/1.582318

Abstract

View articletitled, Separate and independent reductions in direct tunneling in oxide/nitride stacks with monolayer interface nitridation associated with the (i) interface nitridation and (ii) increased physical thickness

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Comparison of plasma chemistries for dry etching of ${Ta}_{2} O_{5}$

K. P. Lee; K. B. Jung; R. K. Singh; S. J. Pearton; C. Hobbs; P. Tobin

J. Vac. Sci. Technol. A 18, 1169–1172 (2000) https://doi.org/10.1116/1.582319

Abstract

View articletitled, Comparison of plasma chemistries for dry etching of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Ta</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mi mathvariant="normal">5</mi></mrow></msub></math>

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Study of the impact of the time-delay effect on the critical dimension of a tungsten silicide/polysilicon gate after reactive ion etching

Shih-Po Lin; Chen-Hsien Ou; Szetsen Lee; Yu-Chung Tien; Chin-Fa Hsu

J. Vac. Sci. Technol. A 18, 1173–1175 (2000) https://doi.org/10.1116/1.582320

Abstract

View articletitled, Study of the impact of the time-delay effect on the critical dimension of a tungsten silicide/polysilicon gate after reactive ion etching

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Formation of Ni silicides on (001)Si with a thin interposing Pt layer

L. W. Cheng; S. L. Cheng; L. J. Chen; H. C. Chien; H. L. Lee; F. M. Pan

J. Vac. Sci. Technol. A 18, 1176–1179 (2000) https://doi.org/10.1116/1.582321

Abstract

View articletitled, Formation of Ni silicides on (001)Si with a thin interposing Pt layer

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Silicon nanodots fabricated on a Si(100) surface via thermal nitridation and oxygen etching reactions

Jeong Sook Ha; Kang-Ho Park; Wan Soo Yun

J. Vac. Sci. Technol. A 18, 1180–1183 (2000) https://doi.org/10.1116/1.582322

Abstract

View articletitled, Silicon nanodots fabricated on a Si(100) surface via thermal nitridation and oxygen etching reactions

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Real-time optical characterization of heteroepitaxy by organometallic chemical vapor deposition

K. A. Bell; M. Ebert; S. D. Yoo; K. Flock; D. E. Aspnes

J. Vac. Sci. Technol. A 18, 1184–1189 (2000) https://doi.org/10.1116/1.582323

Abstract

View articletitled, Real-time optical characterization of heteroepitaxy by organometallic chemical vapor deposition

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Real-time thickness and compositional control of ${Ga}_{1−x} {In}_{x} P$ growth using p-polarized reflectance

V. Woods; N. Dietz; K. Ito; I. Lauko

J. Vac. Sci. Technol. A 18, 1190–1195 (2000) https://doi.org/10.1116/1.582469

Abstract

View articletitled, Real-time thickness and compositional control of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Ga</mi><mrow><mtext>1−x</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">In</mi><mrow><mi>x</mi></mrow></msub><mi mathvariant="normal" xmlns="">P</mi></math> growth using p-polarized reflectance

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Deposition of polycrystalline Si and SiGe by ultra-high vacuum chemical molecular epitaxy

K. M. Chen; H. J. Huang; C. Y. Chang; L. P. Chen; G. W. Huang

J. Vac. Sci. Technol. A 18, 1196–1201 (2000) https://doi.org/10.1116/1.582324

Abstract

View articletitled, Deposition of polycrystalline Si and SiGe by ultra-high vacuum chemical molecular epitaxy

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ELECTRONIC MATERIALS AND PROCESSING I

Strength of nanoscale copper under shear

P. Heino; P. Holloway; E. Ristolainen

J. Vac. Sci. Technol. A 18, 1202–1206 (2000) https://doi.org/10.1116/1.582325

Abstract

View articletitled, Strength of nanoscale copper under shear

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Effects of a new combination of additives in electroplating solution on the properties of Cu films in ULSI applications

J. C. Hu; T. C. Chang; C. W. Wu; L. J. Chen; C. S. Hsiung; W. Y. Hsieh; W. Lur; T. R. Yew

J. Vac. Sci. Technol. A 18, 1207–1210 (2000) https://doi.org/10.1116/1.582326

Abstract

View articletitled, Effects of a new combination of additives in electroplating solution on the properties of Cu films in ULSI applications

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Surface modification and cleaning enhancement of TaSi(N) films with dilute hydrofluoric acid

P. J. S. Mangat; W. J. Dauksher; R. Whig; W. L. O’Brien

J. Vac. Sci. Technol. A 18, 1211–1215 (2000) https://doi.org/10.1116/1.582327

Abstract

View articletitled, Surface modification and cleaning enhancement of TaSi(N) films with dilute hydrofluoric acid

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Low-k Si–O–C–H composite films prepared by plasma-enhanced chemical vapor deposition using bis-trimethylsilylmethane precursor

Yoon-Hae Kim; Seok-Kiu Lee; Hyeong Joon Kim

J. Vac. Sci. Technol. A 18, 1216–1219 (2000) https://doi.org/10.1116/1.582328

Abstract

View articletitled, Low-k Si–O–C–H composite films prepared by plasma-enhanced chemical vapor deposition using bis-trimethylsilylmethane precursor

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ELECTRONIC MATERIALS AND PROCESSING II

Advanced selective dry etching of GaAs/AlGaAs in high density inductively coupled plasmas

J. W. Lee; M. W. Devre; B. H. Reelfs; D. Johnson; J. N. Sasserath; F. Clayton; D. Hays; S. J. Pearton

J. Vac. Sci. Technol. A 18, 1220–1224 (2000) https://doi.org/10.1116/1.582329

Abstract

View articletitled, Advanced selective dry etching of GaAs/AlGaAs in high density inductively coupled plasmas

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Characterization of plasma enhanced chemical vapor deposited SiC and its application in advanced reticle technology–scattering with angular limitation in projection electron beam lithography membrane

S.-I. Han; P. J. S. Mangat; S. M. Smith; W. J. Dauksher; D. Convey; R. B. Gregory

J. Vac. Sci. Technol. A 18, 1225–1229 (2000) https://doi.org/10.1116/1.582330

Abstract

View articletitled, Characterization of plasma enhanced chemical vapor deposited SiC and its application in advanced reticle technology–scattering with angular limitation in projection electron beam lithography membrane

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New approach for the fabrication of device-quality ${Ge/GeO}_{2} {/SiO}_{2}$ interfaces using low temperature remote plasma processing

R. S. Johnson; H. Niimi; G. Lucovsky

J. Vac. Sci. Technol. A 18, 1230–1233 (2000) https://doi.org/10.1116/1.582331

Abstract

View articletitled, New approach for the fabrication of device-quality <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Ge/GeO</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">/SiO</mi><mrow><mn>2</mn></mrow></msub></math> interfaces using low temperature remote plasma processing

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FLAT PANEL DISPLAYS

Multicolor-emitting thin-film electroluminescent devices using ${Ga}_{2} O_{3}$ phosphors co-doped with Mn and Cr

Tadatsugu Minami; Toshikuni Nakatani; Toshihiro Miyata

J. Vac. Sci. Technol. A 18, 1234–1238 (2000) https://doi.org/10.1116/1.582332

Abstract

View articletitled, Multicolor-emitting thin-film electroluminescent devices using <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Ga</mi><mrow><mn>2</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mn>3</mn></mrow></msub></math> phosphors co-doped with Mn and Cr

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MAGNETIC INTERFACES AND NANOSTRUCTURES

Intrinsic and extrinsic magnetic properties of the naturally layered manganites

A. Berger; J. F. Mitchell; D. J. Miller; J. S. Jiang; S. D. Bader

J. Vac. Sci. Technol. A 18, 1239–1246 (2000) https://doi.org/10.1116/1.582333

Abstract

View articletitled, Intrinsic and extrinsic magnetic properties of the naturally layered manganites

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Ferromagnetic semiconductor heterostructures based on (GaMn)As

M. Tanaka; H. Shimizu; T. Hayashi; H. Shimada; K. Ando

J. Vac. Sci. Technol. A 18, 1247–1253 (2000) https://doi.org/10.1116/1.582334

Abstract

View articletitled, Ferromagnetic semiconductor heterostructures based on (GaMn)As

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Low-temperature gaseous nitriding and subsequent oxidation of epitaxial Ni/Fe bilayers

A. V. Mijiritskii; D. O. Boerma

J. Vac. Sci. Technol. A 18, 1254–1258 (2000) https://doi.org/10.1116/1.582335

Abstract

View articletitled, Low-temperature gaseous nitriding and subsequent oxidation of epitaxial Ni/Fe bilayers

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Surface-sensitive, element-specific magnetometry with x-ray linear dichroism

F. O. Schumann; R. F. Willis; J. G. Tobin

J. Vac. Sci. Technol. A 18, 1259–1263 (2000) https://doi.org/10.1116/1.582336

Abstract

View articletitled, Surface-sensitive, element-specific magnetometry with x-ray linear dichroism

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Exchange bias in Fe/Cr double superlattices

J. S. Jiang; G. P. Felcher; A. Inomata; R. Goyette; C. S. Nelson; S. D. Bader

J. Vac. Sci. Technol. A 18, 1264–1268 (2000) https://doi.org/10.1116/1.582337

Abstract

View articletitled, Exchange bias in Fe/Cr double superlattices

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Magnetic stability of novel exchange coupled systems

A. Inomata; J. S. Jiang; C.-Y. You; J. E. Pearson; S. D. Bader

J. Vac. Sci. Technol. A 18, 1269–1272 (2000) https://doi.org/10.1116/1.582338

Abstract

View articletitled, Magnetic stability of novel exchange coupled systems

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Effects of ultraviolet illumination on dry etch rates of NiFe-based magnetic multilayers

H. Cho; K. P. Lee; Y. B. Hahn; E. S. Lambers; S. J. Pearton

J. Vac. Sci. Technol. A 18, 1273–1277 (2000) https://doi.org/10.1116/1.582339

Abstract

View articletitled, Effects of ultraviolet illumination on dry etch rates of NiFe-based magnetic multilayers

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Growth of ultrathin Co/Cu/Si(110) films

S. Maat; C. Liu; W. Eads; M. T. Umlor; G. J. Mankey

J. Vac. Sci. Technol. A 18, 1278–1281 (2000) https://doi.org/10.1116/1.582340

Abstract

View articletitled, Growth of ultrathin Co/Cu/Si(110) films

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MANUFACTURING SCIENCE AND TECHNOLOGY

Generation of positively charged particles at an anode and transport to device wafers in a real radio frequency plasma etching chamber for tungsten etch-back process

Tsuyoshi Moriya; Natsuko Ito; Fumihiko Uesugi; Yuji Hayashi; Koji Okamura

J. Vac. Sci. Technol. A 18, 1282–1286 (2000) https://doi.org/10.1116/1.582341

Abstract

View articletitled, Generation of positively charged particles at an anode and transport to device wafers in a real radio frequency plasma etching chamber for tungsten etch-back process

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Multizone uniformity control of a chemical mechanical polishing process utilizing a pre- and postmeasurement strategy

Chadi El Chemali; James Moyne; Kareemullah Khan; Rock Nadeau; Paul Smith; John Colt; Jonathan Chapple-Sokol; Tarun Parikh

J. Vac. Sci. Technol. A 18, 1287–1296 (2000) https://doi.org/10.1116/1.582342

Abstract

View articletitled, Multizone uniformity control of a chemical mechanical polishing process utilizing a pre- and postmeasurement strategy

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Demonstration of broadband radio frequency sensing: Empirical polysilicon etch rate estimation in a Lam 9400 etch tool

Craig Garvin; J. W. Grizzle

J. Vac. Sci. Technol. A 18, 1297–1302 (2000) https://doi.org/10.1116/1.582343

Abstract

View articletitled, Demonstration of broadband radio frequency sensing: Empirical polysilicon etch rate estimation in a Lam 9400 etch tool

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Real time control of plasma deposited optical filters by multiwavelength ellipsometry

T. Heitz; A. Hofrichter; P. Bulkin; B. Drevillon

J. Vac. Sci. Technol. A 18, 1303–1307 (2000) https://doi.org/10.1116/1.582344

Abstract

View articletitled, Real time control of plasma deposited optical filters by multiwavelength ellipsometry

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Effects of trapped charges on Hg-Schottky capacitance–voltage measurements of n-type epitaxial silicon wafers

Q. Wang; D. Liu; J. T. Virgo; J. Yeh; R. J. Hillard

J. Vac. Sci. Technol. A 18, 1308–1312 (2000) https://doi.org/10.1116/1.582345

Abstract

View articletitled, Effects of trapped charges on Hg-Schottky capacitance–voltage measurements of n-type epitaxial silicon wafers

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Plasma etch-back planarization coupled to chemical mechanical polishing for sub 0.18 μm shallow trench isolation technology

André Schiltz; Laëtitia Palatini; Maryse Paoli; Maurice Rivoire; Alain Prola

J. Vac. Sci. Technol. A 18, 1313–1320 (2000) https://doi.org/10.1116/1.582346

Abstract

View articletitled, Plasma etch-back planarization coupled to chemical mechanical polishing for sub 0.18 μm shallow trench isolation technology

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NANOMETER-SCALE SCIENCE AND TECHNOLOGY

Experimental and theoretical results of room-temperature single-electron transistor formed by the atomic force microscope nano-oxidation process

Y. Gotoh; K. Matsumoto; T. Maeda; E. B. Cooper; S. R. Manalis; H. Fang; S. C. Minne; T. Hunt; H. Dai; J. Harris; C. F. Quate

J. Vac. Sci. Technol. A 18, 1321–1325 (2000) https://doi.org/10.1116/1.582347

Abstract

View articletitled, Experimental and theoretical results of room-temperature single-electron transistor formed by the atomic force microscope nano-oxidation process

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Fabrication of bismuth nanowires with a silver nanocrystal shadowmask

S. H. Choi; K. L. Wang; M. S. Leung; G. W. Stupian; N. Presser; B. A. Morgan; R. E. Robertson; M. Abraham; E. E. King; M. B. Tueling; S. W. Chung; J. R. Heath; S. L. Cho; J. B. Ketterson

J. Vac. Sci. Technol. A 18, 1326–1328 (2000) https://doi.org/10.1116/1.582348

Abstract

View articletitled, Fabrication of bismuth nanowires with a silver nanocrystal shadowmask

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Fabrication of metal nanowire using carbon nanotube as a mask

Wan Soo Yun; Jinhee Kim; Kang-Ho Park; Jeong Sook Ha; Young-Jo Ko; Kyoungwan Park; Seong Keun Kim; Yong-Joo Doh; Hu-Jong Lee; Jean-Paul Salvetat; László Forró

J. Vac. Sci. Technol. A 18, 1329–1332 (2000) https://doi.org/10.1116/1.582349

Abstract

View articletitled, Fabrication of metal nanowire using carbon nanotube as a mask

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Fabrication of a nanosize metal aperture for a near field scanning optical microscopy sensor using photoresist removal and sputtering techniques

M. Y. Jung; I. W. Lyo; D. W. Kim; S. S. Choi

J. Vac. Sci. Technol. A 18, 1333–1337 (2000) https://doi.org/10.1116/1.582350

Abstract

View articletitled, Fabrication of a nanosize metal aperture for a near field scanning optical microscopy sensor using photoresist removal and sputtering techniques

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Nondestructive one-dimensional scanning capacitance microscope dopant profile determination method and its application to three-dimensional dopant profiles

Eu-Seok Kang; Jeong-Won Kang; Ho-Jung Hwang; Jun-Ha Lee

J. Vac. Sci. Technol. A 18, 1338–1344 (2000) https://doi.org/10.1116/1.582473

Abstract

View articletitled, Nondestructive one-dimensional scanning capacitance microscope dopant profile determination method and its application to three-dimensional dopant profiles

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NANOMETER-SCALE SCIENCE AND TECHNOLOGY I

Scanning probe microscopy tip–sample interactions in primary alcohols of varying chain length

R. M. Ralich; Y. Wu; R. D. Ramsier; P. N. Henriksen

J. Vac. Sci. Technol. A 18, 1345–1348 (2000) https://doi.org/10.1116/1.582351

Abstract

View articletitled, Scanning probe microscopy tip–sample interactions in primary alcohols of varying chain length

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NANOMETER-SCALE SCIENCE AND TECHNOLOGY II

Isolating, imaging, and electrically characterizing individual organic molecules on the Si(100) surface with the scanning tunneling microscope

M. C. Hersam; N. P. Guisinger; J. W. Lyding

J. Vac. Sci. Technol. A 18, 1349–1353 (2000) https://doi.org/10.1116/1.582352

Abstract

View articletitled, Isolating, imaging, and electrically characterizing individual organic molecules on the Si(100) surface with the scanning tunneling microscope

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PLASMA SCIENCE AND TECHNOLOGY

Etching characteristics of ${SrBi}_{2} {Ta}_{2} O_{9}$ film with ${Ar/CHF}_{3}$ plasma

Jung-Woo Seo; Do-Haing Lee; Won-Jae Lee; Byoung-Gon Yu; Kwang-Ho Kwon; Geun-Young Yeom; Eui-Goo Chang; Chang-Il Kim

J. Vac. Sci. Technol. A 18, 1354–1358 (2000) https://doi.org/10.1116/1.582353

Abstract

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Optical emission studies and neutral stream characterization of a surface reflection materials processing source

Xianmin Tang; Dennis M. Manos

J. Vac. Sci. Technol. A 18, 1359–1365 (2000) https://doi.org/10.1116/1.582354

Abstract

View articletitled, Optical emission studies and neutral stream characterization of a surface reflection materials processing source

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Estimation of surface kinetic parameters and two-dimensional simulation of InP pattern features during ${CH}_{4} {–H}_{2}$ plasma etching

A. Rhallabi; L. Houlet; G. Turban

J. Vac. Sci. Technol. A 18, 1366–1372 (2000) https://doi.org/10.1116/1.582355

Abstract

View articletitled, Estimation of surface kinetic parameters and two-dimensional simulation of InP pattern features during <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">CH</mi><mrow><mi mathvariant="normal">4</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">–H</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math> plasma etching

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Effects of ${BCl}_{3}$ addition on ${Ar/Cl}_{2}$ gas in inductively coupled plasmas for lead zirconate titanate etching

Tae-Hyun An; Joon-Yong Park; Geun-Young Yeom; Eui-Goo Chang; Chang-Il Kim

J. Vac. Sci. Technol. A 18, 1373–1376 (2000) https://doi.org/10.1116/1.582356

Abstract

View articletitled, Effects of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">BCl</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub></math> addition on <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Ar/Cl</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math> gas in inductively coupled plasmas for lead zirconate titanate etching

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Roles of $N_{2}$ gas in etching of platinum by inductively coupled ${Ar/Cl}_{2} {/N}_{2}$ plasmas

Jae-Heung Ryu; Nam-Hoon Kim; Hyeon-Soo Kim; Geun-Young Yeom; Eui-Goo Chang; Chang-Il Kim

J. Vac. Sci. Technol. A 18, 1377–1380 (2000) https://doi.org/10.1116/1.582357

Abstract

View articletitled, Roles of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">N</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math> gas in etching of platinum by inductively coupled <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Ar/Cl</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">/N</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math> plasmas

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Etching mechanism of ${(Ba, Sr)TiO}_{3}$ films in high density ${Cl}_{2} {/BCl}_{3} /Ar$ plasma

Seung-Bum Kim; Yong-Hyuk Lee; Tae-Hyung Kim; Geun-Young Yeom; Chang-Il Kim

J. Vac. Sci. Technol. A 18, 1381–1384 (2000) https://doi.org/10.1116/1.582358

Abstract

View articletitled, Etching mechanism of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">(Ba, Sr)TiO</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub></math> films in high density <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Cl</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">/BCl</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub><mi mathvariant="normal" xmlns="">/Ar</mi></math> plasma

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Deceleration of silicon etch rate at high aspect ratios

J. Kiihamäki

J. Vac. Sci. Technol. A 18, 1385–1389 (2000) https://doi.org/10.1116/1.582359

Abstract

View articletitled, Deceleration of silicon etch rate at high aspect ratios

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Magnetized inductively coupled plasma etching of GaN in ${Cl}_{2} / {BCl}_{3}$ plasmas

Y. H. Lee; Y. J. Sung; G. Y. Yeom; J. W. Lee; T. I. Kim

J. Vac. Sci. Technol. A 18, 1390–1394 (2000) https://doi.org/10.1116/1.582360

Abstract

View articletitled, Magnetized inductively coupled plasma etching of GaN in <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Cl</mi><mrow><mn>2</mn></mrow></msub><mi xmlns="">/</mi><msub xmlns=""><mi mathvariant="normal">BCl</mi><mrow><mn>3</mn></mrow></msub></math> plasmas

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Diagnostic of rf discharge plasma by Thomson scattering with gated intensified charge coupled device detectors

S. A. Moshkalyov; C. Thompson; T. Morrow; W. G. Graham

J. Vac. Sci. Technol. A 18, 1395–1400 (2000) https://doi.org/10.1116/1.582361

Abstract

View articletitled, Diagnostic of rf discharge plasma by Thomson scattering with gated intensified charge coupled device detectors

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Plasma enhanced chemical vapor deposition Si-rich silicon oxynitride films for advanced self-aligned contact oxide etching in sub-0.25 μm ultralarge scale integration technology and beyond

Jeong-Ho Kim; Jae-Seon Yu; Ja-Chun Ku; Choon-Kun Ryu; Su-Jin Oh; Si-Bum Kim; Jin-Woong Kim; Jeong-Mo Hwang; Su-Youb Lee; Inazawa Kouichiro

J. Vac. Sci. Technol. A 18, 1401–1410 (2000) https://doi.org/10.1116/1.582362

Abstract

View articletitled, Plasma enhanced chemical vapor deposition Si-rich silicon oxynitride films for advanced self-aligned contact oxide etching in sub-0.25 μm ultralarge scale integration technology and beyond

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PLASMA SCIENCE AND TECHNOLOGY I

Transfer etching of bilayer resists in oxygen-based plasmas

A. P. Mahorowala; K. Babich; Q. Lin; D. R. Medeiros; K. Petrillo; J. Simons; M. Angelopoulos; R. Sooriyakumaran; D. Hofer; G. W. Reynolds; J. W. Taylor

J. Vac. Sci. Technol. A 18, 1411–1419 (2000) https://doi.org/10.1116/1.582363

Abstract

View articletitled, Transfer etching of bilayer resists in oxygen-based plasmas

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Integration of metal masking and etching for deep submicron patterning

Calvin T. Gabriel; Robert Y. Kim; Daniel C. Baker

J. Vac. Sci. Technol. A 18, 1420–1424 (2000) https://doi.org/10.1116/1.582364

Abstract

View articletitled, Integration of metal masking and etching for deep submicron patterning

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Reactive ion etch of 150 nm Al lines for interconnections in dynamic random access memory

G. Stojakovic; X. J. Ning

J. Vac. Sci. Technol. A 18, 1425–1430 (2000) https://doi.org/10.1116/1.582365

Abstract

View articletitled, Reactive ion etch of 150 nm Al lines for interconnections in dynamic random access memory

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PLASMA SCIENCE AND TECHNOLOGY II

Characterization of process-induced charging damage in scaled-down devices and reliability improvement using time-modulated plasma

Ko Noguchi; Seiji Samukawa; Hiroto Ohtake; Tomonori Mukai

J. Vac. Sci. Technol. A 18, 1431–1436 (2000) https://doi.org/10.1116/1.582366

Abstract

View articletitled, Characterization of process-induced charging damage in scaled-down devices and reliability improvement using time-modulated plasma

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SURFACE SCIENCE

Insertion process and electrical conduction of conjugated molecules in n-alkanethiol self-assembled monolayers on Au(111)

Takao Ishida; Wataru Mizutani; Hiroshi Tokumoto; Nami Choi; Uichi Akiba; Masamichi Fujihira

J. Vac. Sci. Technol. A 18, 1437–1442 (2000) https://doi.org/10.1116/1.582477

Abstract

View articletitled, Insertion process and electrical conduction of conjugated molecules in n-alkanethiol self-assembled monolayers on Au(111)

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Decomposition of 1,3-butadiene on Ru(001): Evidence for a $(CH)_{4}$ metallacycle

Michael J. Weiss; Christopher J. Hagedorn; W. Henry Weinberg

J. Vac. Sci. Technol. A 18, 1443–1447 (2000) https://doi.org/10.1116/1.582367

Abstract

View articletitled, Decomposition of 1,3-butadiene on Ru(001): Evidence for a <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">(</mi><mi mathvariant="normal" xmlns="">CH</mi><msub xmlns=""><mi>)</mi><mrow><mn>4</mn></mrow></msub></math> metallacycle

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Study of boron effects on the reaction of Co and ${Si}_{1−x} {Ge}_{x}$ at various temperatures

H. J. Huang; K. M. Chen; C. Y. Chang; T. Y. Huang; T. C. Chang; L. P. Chen; G. W. Huang

J. Vac. Sci. Technol. A 18, 1448–1454 (2000) https://doi.org/10.1116/1.582368

Abstract

View articletitled, Study of boron effects on the reaction of Co and <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Si</mi><mrow><mtext>1−x</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ge</mi><mrow><mi>x</mi></mrow></msub></math> at various temperatures

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The adsorption and desorption of CO on the W(111) surface

S. Y. Lee; Y.-D. Kim; T. S. Yang; J.-H. Boo; S. C. Park; S. B. Lee; C. Y. Park; H. T. Kwak

J. Vac. Sci. Technol. A 18, 1455–1459 (2000) https://doi.org/10.1116/1.582369

Abstract

View articletitled, The adsorption and desorption of CO on the W(111) surface

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Surface structure of MnO/Rh(100) studied by scanning tunneling microscopy and low-energy electron diffraction

H. Nishimura; T. Tashiro; T. Fujitani; J. Nakamura

J. Vac. Sci. Technol. A 18, 1460–1463 (2000) https://doi.org/10.1116/1.582370

Abstract

View articletitled, Surface structure of MnO/Rh(100) studied by scanning tunneling microscopy and low-energy electron diffraction

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In situ study of the formation of SiC thin films on Si(111) surfaces with 1,3-disilabutane: Adsorption properties and initial deposition characteristics

H. G. Yoon; J.-H. Boo; W. L. Liu; S.-B. Lee; S.-C. Park; H. Kang; Y. Kim

J. Vac. Sci. Technol. A 18, 1464–1468 (2000) https://doi.org/10.1116/1.582470

Abstract

View articletitled, In situ study of the formation of SiC thin films on Si(111) surfaces with 1,3-disilabutane: Adsorption properties and initial deposition characteristics

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Site preferences of oxygen and boron atoms during dissociative reaction of ${HBO}_{2}$ molecules onto the Si(111)-7×7 surface

T. Kaikoh; K. Miyake; Y. J. Li; R. Morita; M. Yamashita; H. Shigekawa

J. Vac. Sci. Technol. A 18, 1469–1472 (2000) https://doi.org/10.1116/1.582478

Abstract

View articletitled, Site preferences of oxygen and boron atoms during dissociative reaction of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">HBO</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math> molecules onto the Si(111)-7×7 surface

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Cesium-induced structural transformation from the $Si(113)3 ×2$ to the $3×1$ surface

C. C. Hwang; K. S. An; S. H. Kim; Y. K. Kim; C. Y. Park; S. N. Kwon; H. S. Song; K. H. Jung; T. Kinoshita; A. Kakizaki; T.-H. Kang; B. Kim

J. Vac. Sci. Technol. A 18, 1473–1477 (2000) https://doi.org/10.1116/1.582371

Abstract

View articletitled, Cesium-induced structural transformation from the <math xmlns="http://www.w3.org/1998/Math/MathML"><mi mathvariant="normal" xmlns="">Si(113)3</mi><mtext xmlns="">×2</mtext></math> to the <math xmlns="http://www.w3.org/1998/Math/MathML"><mtext xmlns="">3×1</mtext></math> surface

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Cyclic voltammetry, x-ray photoelectron spectroscopy, secondary-ion-mass spectrometry, and ion-scattering spectrometry examination of zirconium passive film breakdown in the presence of sulfate

R. Schennach; A. Mamun; N. Kunamneni; D. L. Cocke

J. Vac. Sci. Technol. A 18, 1478–1483 (2000) https://doi.org/10.1116/1.582372

Abstract

View articletitled, Cyclic voltammetry, x-ray photoelectron spectroscopy, secondary-ion-mass spectrometry, and ion-scattering spectrometry examination of zirconium passive film breakdown in the presence of sulfate

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Ultrahigh vacuum compatible matrix assisted laser desorption/ionization time-of-flight mass spectrometer

T. L. Porter; S. Hermann

J. Vac. Sci. Technol. A 18, 1484–1487 (2000) https://doi.org/10.1116/1.582471

Abstract

View articletitled, Ultrahigh vacuum compatible matrix assisted laser desorption/ionization time-of-flight mass spectrometer

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SURFACE SCIENCE I

Na- and Li-induced Ge(111)3×1 reconstruction: Different electronic configurations revealed by scanning tunneling microscopy images

Geunseop Lee; Jonggeol Kim; H. Mai; Ilya Chizhov; R. F. Willis

J. Vac. Sci. Technol. A 18, 1488–1491 (2000) https://doi.org/10.1116/1.582474

Abstract

View articletitled, Na- and Li-induced Ge(111)3×1 reconstruction: Different electronic configurations revealed by scanning tunneling microscopy images

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Reflection high-energy electron diffraction and scanning tunneling microscopy study of InP(001) surface reconstructions

V. P. LaBella; Z. Ding; D. W. Bullock; C. Emery; P. M. Thibado

J. Vac. Sci. Technol. A 18, 1492–1496 (2000) https://doi.org/10.1116/1.582373

Abstract

View articletitled, Reflection high-energy electron diffraction and scanning tunneling microscopy study of InP(001) surface reconstructions

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SURFACE SCIENCE II

Reactions of gas-phase atomic hydrogen and deuterium with chemically modified Ir(111) surfaces

Christopher J. Hagedorn; Michael J. Weiss; W. Henry Weinberg

J. Vac. Sci. Technol. A 18, 1497–1502 (2000) https://doi.org/10.1116/1.582374

Abstract

View articletitled, Reactions of gas-phase atomic hydrogen and deuterium with chemically modified Ir(111) surfaces

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Reaction between NO and CO on rhodium (100): How lateral interactions lead to auto-accelerating kinetics

M. J. P. Hopstaken; J. W. Niemantsverdriet

J. Vac. Sci. Technol. A 18, 1503–1508 (2000) https://doi.org/10.1116/1.582375

Abstract

View articletitled, Reaction between NO and CO on rhodium (100): How lateral interactions lead to auto-accelerating kinetics

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Coverage dependence of activation barriers: Nitrogen on Ru(0001)

L. Diekhöner; H. Mortensen; A. Baurichter; A. C. Luntz

J. Vac. Sci. Technol. A 18, 1509–1513 (2000) https://doi.org/10.1116/1.582376

Abstract

View articletitled, Coverage dependence of activation barriers: Nitrogen on Ru(0001)

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Microreactor for studies of low surface area model catalysts made by electron-beam lithography

Stefan Johansson; Erik Fridell; Bengt Kasemo

J. Vac. Sci. Technol. A 18, 1514–1519 (2000) https://doi.org/10.1116/1.582377

Abstract

View articletitled, Microreactor for studies of low surface area model catalysts made by electron-beam lithography

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SURFACE SCIENCE III

Water adsorption structures on flat and stepped Ru(0001) surfaces

Wolfgang Hoffmann; Carsten Benndorf

J. Vac. Sci. Technol. A 18, 1520–1525 (2000) https://doi.org/10.1116/1.582378

Abstract

View articletitled, Water adsorption structures on flat and stepped Ru(0001) surfaces

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Monte Carlo derived diffusion parameters for Ga on the GaAs(001)- $(2×4)$ surface: A molecular beam epitaxy–scanning tunneling microscopy study

V. P. LaBella; D. W. Bullock; Z. Ding; C. Emery; W. G. Harter; P. M. Thibado

J. Vac. Sci. Technol. A 18, 1526–1531 (2000) https://doi.org/10.1116/1.582379

Abstract

View articletitled, Monte Carlo derived diffusion parameters for Ga on the GaAs(001)- <math xmlns="http://www.w3.org/1998/Math/MathML"><mtext xmlns="">(2×4)</mtext></math> surface: A molecular beam epitaxy–scanning tunneling microscopy study

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THIN FILMS

Ionized sputter deposition using an extremely high plasma density pulsed magnetron discharge

Karol Macák; Vladimir Kouznetsov; Jochen Schneider; Ulf Helmersson; Ivan Petrov

J. Vac. Sci. Technol. A 18, 1533–1537 (2000) https://doi.org/10.1116/1.582380

Abstract

View articletitled, Ionized sputter deposition using an extremely high plasma density pulsed magnetron discharge

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Origin and evolution of sculptured thin films

Russell Messier; Vijayakumar C. Venugopal; Paul D. Sunal

J. Vac. Sci. Technol. A 18, 1538–1545 (2000) https://doi.org/10.1116/1.582381

Abstract

View articletitled, Origin and evolution of sculptured thin films

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Ionized physical-vapor deposition using a hollow-cathode magnetron source for advanced metallization

E. Klawuhn; G. C. D’Couto; K. A. Ashtiani; P. Rymer; M. A. Biberger; K. B. Levy

J. Vac. Sci. Technol. A 18, 1546–1549 (2000) https://doi.org/10.1116/1.582382

Abstract

View articletitled, Ionized physical-vapor deposition using a hollow-cathode magnetron source for advanced metallization

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Effects of copper seedlayer deposition method for electroplating

E. C. Cooney, III; D. C. Strippe; J. W. Korejwa

J. Vac. Sci. Technol. A 18, 1550–1554 (2000) https://doi.org/10.1116/1.582383

Abstract

View articletitled, Effects of copper seedlayer deposition method for electroplating

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Steel coating by self-induced ion plating, a new high throughput metallization ion plating technique

P. Vanden Brande; A. Weymeersch

J. Vac. Sci. Technol. A 18, 1555–1560 (2000) https://doi.org/10.1116/1.582384

Abstract

View articletitled, Steel coating by self-induced ion plating, a new high throughput metallization ion plating technique

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Effect of HCl catalyst in the formation of flat structures of ${Ta}_{2} O_{5}$ thin films by sol-gel technique

C. Cantalini; M. Pelino; R. A. Phani; M. Passacantando; P. Picozzi; S. Santucci

J. Vac. Sci. Technol. A 18, 1561–1566 (2000) https://doi.org/10.1116/1.582385

Abstract

View articletitled, Effect of HCl catalyst in the formation of flat structures of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Ta</mi><mrow><mn>2</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mn>5</mn></mrow></msub></math> thin films by sol-gel technique

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Mechanical properties and residual stress in AlN films prepared by ion beam assisted deposition

Yoshihisa Watanabe; Nobuaki Kitazawa; Yoshikazu Nakamura; Chunliang Li; Tohru Sekino; Koichi Niihara

J. Vac. Sci. Technol. A 18, 1567–1570 (2000) https://doi.org/10.1116/1.582386

Abstract

View articletitled, Mechanical properties and residual stress in AlN films prepared by ion beam assisted deposition

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Oxidation and chemical state analysis of polycrystalline magnetron sputtered (Ti, Al)N films at ambient and liquid $N_{2}$ temperatures

S. Seal; A. Kale; K. B. Sundaram; D. Jimenez

J. Vac. Sci. Technol. A 18, 1571–1578 (2000) https://doi.org/10.1116/1.582387

Abstract

View articletitled, Oxidation and chemical state analysis of polycrystalline magnetron sputtered (Ti, Al)N films at ambient and liquid <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">N</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math> temperatures

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Improved light stability of colored ${SiO}_{2}$ coatings containing organic and metalorganic dye molecules

L. L. Dı́az-Flores; J. J. Pérez-Bueno; R. Ramı́rez-Bon; F. J. Espinoza-Beltrán; Y. V. Vorobiev; J. González-Hernández

J. Vac. Sci. Technol. A 18, 1579–1583 (2000) https://doi.org/10.1116/1.582388

Abstract

View articletitled, Improved light stability of colored <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SiO</mi><mrow><mn>2</mn></mrow></msub></math> coatings containing organic and metalorganic dye molecules

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Origin of electrical property distribution on the surface of ZnO:Al films prepared by magnetron sputtering

Tadatsugu Minami; Toshihiro Miyata; Takashi Yamamoto; Hidenobu Toda

J. Vac. Sci. Technol. A 18, 1584–1589 (2000) https://doi.org/10.1116/1.582389

Abstract

View articletitled, Origin of electrical property distribution on the surface of ZnO:Al films prepared by magnetron sputtering

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Low-temperature growth of Ti(C,N) thin films on D2 steel and Si(100) substrates by plasma-enhanced metalorganic chemical vapor deposition

Jin-Hyo Boo; Cheol Ho Heo; Yong Ki Cho; Jeon-Geon Han

J. Vac. Sci. Technol. A 18, 1590–1594 (2000) https://doi.org/10.1116/1.582390

Abstract

View articletitled, Low-temperature growth of Ti(C,N) thin films on D2 steel and Si(100) substrates by plasma-enhanced metalorganic chemical vapor deposition

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Study on the characteristics of TiN thin film deposited by the atomic layer chemical vapor deposition method

Hyeongtag Jeon; June-Woo Lee; Young-Do Kim; Deok-Soo Kim; Kyoung-Soo Yi

J. Vac. Sci. Technol. A 18, 1595–1598 (2000) https://doi.org/10.1116/1.582391

Abstract

View articletitled, Study on the characteristics of TiN thin film deposited by the atomic layer chemical vapor deposition method

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Alternative procedure for the fabrication of close-spaced sublimated CdTe solar cells

H. R. Moutinho; R. G. Dhere; C. Ballif; M. M. Al-Jassim; L. L. Kazmerski

J. Vac. Sci. Technol. A 18, 1599–1603 (2000) https://doi.org/10.1116/1.582392

Abstract

View articletitled, Alternative procedure for the fabrication of close-spaced sublimated CdTe solar cells

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CdS/CdTe interface analysis by transmission electron microscopy

R. G. Dhere; M. M. Al-Jassim; Y. Yan; K. M. Jones; H. R. Moutinho; T. A. Gessert; P. Sheldon; L. L. Kazmerski

J. Vac. Sci. Technol. A 18, 1604–1608 (2000) https://doi.org/10.1116/1.582393

Abstract

View articletitled, CdS/CdTe interface analysis by transmission electron microscopy

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Synthesis of highly oriented piezoelectric AlN films by reactive sputter deposition

F. Engelmark; G. Fucntes; I. V. Katardjiev; A. Harsta; U. Smith; S. Berg

J. Vac. Sci. Technol. A 18, 1609–1612 (2000) https://doi.org/10.1116/1.582394

Abstract

View articletitled, Synthesis of highly oriented piezoelectric AlN films by reactive sputter deposition

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Surface morphology analysis in correlation with crystallinity of ${CeO}_{2} (110)$ layers on Si(100) substrates

T. Inoue; T. Nakamura; S. Nihei; S. Kamata; N. Sakamoto; Y. Yamamoto

J. Vac. Sci. Technol. A 18, 1613–1618 (2000) https://doi.org/10.1116/1.582395

Abstract

View articletitled, Surface morphology analysis in correlation with crystallinity of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">CeO</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><mi mathvariant="normal" xmlns="">(110)</mi></math> layers on Si(100) substrates

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X-ray photoelectron spectroscopy and Auger electron spectroscopy investigation on the oxidation resistance of plasma-treated copper leadframes

A. S. W. Wong; R. Gopal Krishnan; G. Sarkar

J. Vac. Sci. Technol. A 18, 1619–1631 (2000) https://doi.org/10.1116/1.582396

Abstract

View articletitled, X-ray photoelectron spectroscopy and Auger electron spectroscopy investigation on the oxidation resistance of plasma-treated copper leadframes

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Optimization of the reflectivity of magnetron sputter deposited silver films

M. Vergöhl; N. Malkomes; B. Szyszka; F. Neumann; T. Matthée; G. Bräuer

J. Vac. Sci. Technol. A 18, 1632–1637 (2000) https://doi.org/10.1116/1.582397

Abstract

View articletitled, Optimization of the reflectivity of magnetron sputter deposited silver films

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Preparation and characterization of rf-sputtered ${SrTiO}_{3}$ thin films

K. Radhakrishnan; C. L. Tan; H. Q. Zheng; G. I. Ng

J. Vac. Sci. Technol. A 18, 1638–1641 (2000) https://doi.org/10.1116/1.582398

Abstract

View articletitled, Preparation and characterization of rf-sputtered <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SrTiO</mi><mrow><mn>3</mn></mrow></msub></math> thin films

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Organic films prepared by polymer sputtering

Hynek Biederman

J. Vac. Sci. Technol. A 18, 1642–1648 (2000) https://doi.org/10.1116/1.582399

Abstract

View articletitled, Organic films prepared by polymer sputtering

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Preparation of Co and ${CoN}_{x}$ thin films by unbalanced radio frequency magnetron sputtering

T. Tanaka; K. Kawabata; A. Kitabatake

J. Vac. Sci. Technol. A 18, 1649–1652 (2000) https://doi.org/10.1116/1.582400

Abstract

View articletitled, Preparation of Co and <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">CoN</mi><mrow><mi>x</mi></mrow></msub></math> thin films by unbalanced radio frequency magnetron sputtering

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Chemical vapor deposition of alpha aluminum oxide for high-temperature aerospace sensors

Raymond H. Niska; Alan P. Constant; Tony Witt; Otto J. Gregory

J. Vac. Sci. Technol. A 18, 1653–1658 (2000) https://doi.org/10.1116/1.582401

Abstract

View articletitled, Chemical vapor deposition of alpha aluminum oxide for high-temperature aerospace sensors

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Phase development of radio-frequency magnetron sputter-deposited ${Pb(Mg}_{1/3} {Nb}_{2/3} {)O}_{3} {–PbTiO}_{3}$ (90/10) thin films

Jeon-Kook Lee; Dongkyun Park; Deok-Soo Cheong; Jong-Wan Park; Chul Soon Park

J. Vac. Sci. Technol. A 18, 1659–1662 (2000) https://doi.org/10.1116/1.582402

Abstract

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Electrical properties and surface morphology of heteroepitaxial-grown tin-doped indium oxide thin films deposited by molecular-beam epitaxy

Naoaki Taga; Yuzo Shigesato; Masayuki Kamei

J. Vac. Sci. Technol. A 18, 1663–1667 (2000) https://doi.org/10.1116/1.582403

Abstract

View articletitled, Electrical properties and surface morphology of heteroepitaxial-grown tin-doped indium oxide thin films deposited by molecular-beam epitaxy

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Influence of the target-substrate distance on the properties of indium tin oxide films prepared by radio frequency reactive magnetron sputtering

Li-Jian Meng; M. P. dos Santos

J. Vac. Sci. Technol. A 18, 1668–1671 (2000) https://doi.org/10.1116/1.582404

Abstract

View articletitled, Influence of the target-substrate distance on the properties of indium tin oxide films prepared by radio frequency reactive magnetron sputtering

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p-type transparent conducting ${In}_{2} O_{3} {–Ag}_{2} O$ thin films prepared by reactive electron beam evaporation technique

J. Asbalter; A. Subrahmanyam

J. Vac. Sci. Technol. A 18, 1672–1676 (2000) https://doi.org/10.1116/1.582405

Abstract

View articletitled, p-type transparent conducting <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">In</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">–Ag</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><mi mathvariant="normal" xmlns="">O</mi></math> thin films prepared by reactive electron beam evaporation technique

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Mott–Schottky analysis of thin ZnO films

Charles F. Windisch, Jr.; Gregory J. Exarhos

J. Vac. Sci. Technol. A 18, 1677–1680 (2000) https://doi.org/10.1116/1.582406

Abstract

View articletitled, Mott–Schottky analysis of thin ZnO films

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Structural determination of wear debris generated from sliding wear tests on ceramic coatings using Raman microscopy

C. P. Constable; J. Yarwood; P. Hovsepian; L. A. Donohue; D. B. Lewis; W.-D. Münz

J. Vac. Sci. Technol. A 18, 1681–1689 (2000) https://doi.org/10.1116/1.582407

Abstract

View articletitled, Structural determination of wear debris generated from sliding wear tests on ceramic coatings using Raman microscopy

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Effect of rapid thermal annealing temperature on the formation of CoSi studied by x-ray photoelectron spectroscopy and micro-Raman spectroscopy

Jin Zhao; Lynette K. Ballast; Tim Z. Hossain; Rebecca E. Trostel; William C. Bridgman

J. Vac. Sci. Technol. A 18, 1690–1693 (2000) https://doi.org/10.1116/1.582408

Abstract

View articletitled, Effect of rapid thermal annealing temperature on the formation of CoSi studied by x-ray photoelectron spectroscopy and micro-Raman spectroscopy

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Temperature dependence of structure and electrical properties of germanium–antimony–tellurium thin film

J. González-Hernández; E. Prokhorov; Yu. Vorobiev

J. Vac. Sci. Technol. A 18, 1694–1700 (2000) https://doi.org/10.1116/1.582409

Abstract

View articletitled, Temperature dependence of structure and electrical properties of germanium–antimony–tellurium thin film

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In-situ characterization of thin films by the focused ion beam

S. H. Choi; R. Li; M. Pak; K. L. Wang; M. S. Leung; G. W. Stupian; N. Presser

J. Vac. Sci. Technol. A 18, 1701–1703 (2000) https://doi.org/10.1116/1.582410

Abstract

View articletitled, In-situ characterization of thin films by the focused ion beam

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Integrated measurement of Ti and TiN thickness and optical constants using reflectance data through a vacuum chamber window

Milad F. Tabet; Umesh Kelkar; William A. McGahan

J. Vac. Sci. Technol. A 18, 1704–1708 (2000) https://doi.org/10.1116/1.582411

Abstract

View articletitled, Integrated measurement of Ti and TiN thickness and optical constants using reflectance data through a vacuum chamber window

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Stabilization of high-deposition-rate reactive magnetron sputtering of oxides by in situ spectroscopic ellipsometry and plasma diagnostics

M. Vergöhl; B. Hunsche; N. Malkomes; T. Matthée; B. Szyszka

J. Vac. Sci. Technol. A 18, 1709–1712 (2000) https://doi.org/10.1116/1.582412

Abstract

View articletitled, Stabilization of high-deposition-rate reactive magnetron sputtering of oxides by in situ spectroscopic ellipsometry and plasma diagnostics

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VACUUM METALLURGY

Growth of SiC thin films on graphite for oxidation-protective coating

J.-H. Boo; M. C. Kim; S.-B. Lee; S.-J. Park; J.-G. Han

J. Vac. Sci. Technol. A 18, 1713–1717 (2000) https://doi.org/10.1116/1.582413

Abstract

View articletitled, Growth of SiC thin films on graphite for oxidation-protective coating

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Enhanced adhesion through local epitaxy of transition-metal nitride coatings on ferritic steel promoted by metal ion etching in a combined cathodic arc/unbalanced magnetron deposition system

C. Schönjahn; L. A. Donohue; D. B. Lewis; W.-D. Münz; R. D. Twesten; I. Petrov

J. Vac. Sci. Technol. A 18, 1718–1723 (2000) https://doi.org/10.1116/1.582414

Abstract

View articletitled, Enhanced adhesion through local epitaxy of transition-metal nitride coatings on ferritic steel promoted by metal ion etching in a combined cathodic arc/unbalanced magnetron deposition system

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VACUUM TECHNOLOGY

Compact wide-range cold-cathode gauges

B. R. F. Kendall; E. Drubetsky

J. Vac. Sci. Technol. A 18, 1724–1729 (2000) https://doi.org/10.1116/1.582479

Abstract

View articletitled, Compact wide-range cold-cathode gauges

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New enhanced performance low-pressure capacitance manometer

C. P. Grudzien; D. J. Lischer

J. Vac. Sci. Technol. A 18, 1730–1735 (2000) https://doi.org/10.1116/1.582415

Abstract

View articletitled, New enhanced performance low-pressure capacitance manometer

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Evolution of integrated-circuit vacuum processes: 1959–1975

Robert K. Waits

J. Vac. Sci. Technol. A 18, 1736–1745 (2000) https://doi.org/10.1116/1.582416

Abstract

View articletitled, Evolution of integrated-circuit vacuum processes: 1959–1975

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History of industrial and commercial ion implantation 1906–1978

C. B. Yarling

J. Vac. Sci. Technol. A 18, 1746–1750 (2000) https://doi.org/10.1116/1.582417

Abstract

View articletitled, History of industrial and commercial ion implantation 1906–1978

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Application of porcelain enamel as an ultra-high-vacuum-compatible electrical insulator

C. Biscardi; H. Hseuh; M. Mapes

J. Vac. Sci. Technol. A 18, 1751–1754 (2000) https://doi.org/10.1116/1.582418

Abstract

View articletitled, Application of porcelain enamel as an ultra-high-vacuum-compatible electrical insulator

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Fundamental functions of a new type of leak detector using oxygen-ion conductor

K. Tatenuma; T. Noguchi; K. Uchida; H. Saeki; A. Ando; T. Momose

J. Vac. Sci. Technol. A 18, 1755–1757 (2000) https://doi.org/10.1116/1.582419

Abstract

View articletitled, Fundamental functions of a new type of leak detector using oxygen-ion conductor

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Review of pumping by thermal molecular pressure

J. P. Hobson; D. B. Salzman

J. Vac. Sci. Technol. A 18, 1758–1765 (2000) https://doi.org/10.1116/1.582420

Abstract

View articletitled, Review of pumping by thermal molecular pressure

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Inner pressure measurement of turbo molecular pump

H.-P. Cheng; R.-Y. Jou; J.-C. Lin; C.-J. Chen; W.-H. Huang

J. Vac. Sci. Technol. A 18, 1766–1771 (2000) https://doi.org/10.1116/1.582421

Abstract

View articletitled, Inner pressure measurement of turbo molecular pump

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Measurement of axial pressure distribution on a rotor of a helical grooved molecular drag pump

T. Sawada; W. Sugiyama; K. Takano

J. Vac. Sci. Technol. A 18, 1772–1776 (2000) https://doi.org/10.1116/1.582422

Abstract

View articletitled, Measurement of axial pressure distribution on a rotor of a helical grooved molecular drag pump

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Dry vacuum pumps for semiconductor processes: Guidelines for primary pump selection

Philip A. Lessard

J. Vac. Sci. Technol. A 18, 1777–1781 (2000) https://doi.org/10.1116/1.582423

Abstract

View articletitled, Dry vacuum pumps for semiconductor processes: Guidelines for primary pump selection

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Dry vacuum pumps: A method for the evaluation of the degree of dry

R. P. Davis; R. A. Abreu; A. D. Chew

J. Vac. Sci. Technol. A 18, 1782–1788 (2000) https://doi.org/10.1116/1.582424

Abstract

View articletitled, Dry vacuum pumps: A method for the evaluation of the degree of dry

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Experiments with a thin-walled stainless-steel vacuum chamber

Vincenc Nemanič; Janez Šetina

J. Vac. Sci. Technol. A 18, 1789–1793 (2000) https://doi.org/10.1116/1.582425

Abstract

View articletitled, Experiments with a thin-walled stainless-steel vacuum chamber

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Laser Interferometer Gravitational-Wave Observatory beam tube component and module leak testing

W. A. Carpenter; P. B. Shaw; L. Jones; R. Weiss

J. Vac. Sci. Technol. A 18, 1794–1799 (2000) https://doi.org/10.1116/1.582426

Abstract

View articletitled, Laser Interferometer Gravitational-Wave Observatory beam tube component and module leak testing

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Decay rate of photoresist outgassing from ion implantation

A. S. Perel; T. N. Horsky

J. Vac. Sci. Technol. A 18, 1800–1803 (2000) https://doi.org/10.1116/1.582427

Abstract

View articletitled, Decay rate of photoresist outgassing from ion implantation

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APPLIED SURFACE SCIENCE/MAGNETIC INTERFACES AND NANOSTRUCTURES/VACUUM METALLURGY

Evolution of the corrosion process on thin-film media

JiFeng Ying; Tatiana Anoikin; Cecilia Martner

J. Vac. Sci. Technol. A 18, 1804–1808 (2000) https://doi.org/10.1116/1.582428

Abstract

View articletitled, Evolution of the corrosion process on thin-film media

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Tribochemistry of monodispersed ZDOL with hydrogenated carbon overcoats

Chao-Yuan Chen; David B. Bogy; C. Singh Bhatia

J. Vac. Sci. Technol. A 18, 1809–1817 (2000) https://doi.org/10.1116/1.582429

Abstract

View articletitled, Tribochemistry of monodispersed ZDOL with hydrogenated carbon overcoats

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FLAT PANEL DISPLAYS/VACUUM TECHNOLOGY

New field-emission device with improved vacuum features

V. P. Mammana; F. T. Degasperi; O. R. Monteiro; J. H. Vuolo; M. C. Salvadori; I. G. Brown

J. Vac. Sci. Technol. A 18, 1818–1822 (2000) https://doi.org/10.1116/1.582430

Abstract

View articletitled, New field-emission device with improved vacuum features

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FLAT PANEL DISPLAYS/ORGANIC ELECTRONIC MATERIALS/ELECTRONIC MATERIALS AND PROCESSING

Excimer laser processing for a-Si and poly-Si thin film transistors for imager applications

J. P. Lu; P. Mei; R. T. Fulks; J. Rahn; J. Ho; Y. Wang; J. B. Boyce; R. A. Street

J. Vac. Sci. Technol. A 18, 1823–1829 (2000) https://doi.org/10.1116/1.582480

Abstract

View articletitled, Excimer laser processing for a-Si and poly-Si thin film transistors for imager applications

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MAGNETIC INTERFACES AND NANO STRUCTURES/ELECTRONIC MATERIALS AND PROCESSING

Pinhole decoration in magnetic tunnel junctions

D. Allen; R. Schad; G. Zangari; I. Zana; D. Yang; M. C. Tondra; D. Wang

J. Vac. Sci. Technol. A 18, 1830–1833 (2000) https://doi.org/10.1116/1.582431

Abstract

View articletitled, Pinhole decoration in magnetic tunnel junctions

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Characterization and analysis of a novel hybrid magnetoelectronic device for magnetic field sensing

D. M. Schaadt; E. T. Yu; S. Sankar; A. E. Berkowitz

J. Vac. Sci. Technol. A 18, 1834–1837 (2000) https://doi.org/10.1116/1.582432

Abstract

View articletitled, Characterization and analysis of a novel hybrid magnetoelectronic device for magnetic field sensing

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MAGNETIC INTERFACES AND NANOSTRUCTURES/NANOMETER-SCALE SCIENCE AND TECHNOLOGY

Periodic magnetic microstructures by glancing angle deposition

B. Dick; M. J. Brett; T. J. Smy; M. R. Freeman; M. Malac; R. F. Egerton

J. Vac. Sci. Technol. A 18, 1838–1844 (2000) https://doi.org/10.1116/1.582481

Abstract

View articletitled, Periodic magnetic microstructures by glancing angle deposition

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Variable temperature and ex situ spin-polarized low-energy electron microscope

E. D. Tober; G. Witte; H. Poppa

J. Vac. Sci. Technol. A 18, 1845–1847 (2000) https://doi.org/10.1116/1.582433

Abstract

View articletitled, Variable temperature and ex situ spin-polarized low-energy electron microscope

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MICRO-ELECTRO-MECHANICAL SYSTEMS/MAGNETIC INTERFACES AND NANOSTRUCTURES

Cryogenic etching of deep narrow trenches in silicon

S. Aachboun; P. Ranson; C. Hilbert; M. Boufnichel

J. Vac. Sci. Technol. A 18, 1848–1852 (2000) https://doi.org/10.1116/1.582434

Abstract

View articletitled, Cryogenic etching of deep narrow trenches in silicon

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Polycrystalline silicon thin films with hydrofluoric acid permeability for underlying oxide etching and vacuum encapsulation

Y. Kageyama; T. Tsuchiya; H. Funabashi; J. Sakata

J. Vac. Sci. Technol. A 18, 1853–1858 (2000) https://doi.org/10.1116/1.582435

Abstract

View articletitled, Polycrystalline silicon thin films with hydrofluoric acid permeability for underlying oxide etching and vacuum encapsulation

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MANUFACTURING SCIENCE AND TECHNOLOGY/PLASMA SCIENCE AND TECHNOLOGY

Etching of organic low dielectric constant material SiLK™ on the Lam Research Corporation 4520XLE™

C. Janowiak; S. Ellingboe; I. Morey

J. Vac. Sci. Technol. A 18, 1859–1863 (2000) https://doi.org/10.1116/1.582436

Abstract

View articletitled, Etching of organic low dielectric constant material SiLK™ on the Lam Research Corporation 4520XLE™

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EMERGING OPPORTUNITIES AND ISSUES IN NANOTUBES AND NANOELECTRICS/...

Growth of carbon nanotubes by microwave plasma-enhanced chemical vapor deposition at low temperature

Young Chul Choi; Dong Jae Bae; Young Hee Lee; Byung Soo Lee; Gyeong-Su Park; Won Bong Choi; Nae Sung Lee; Jong Min Kim

J. Vac. Sci. Technol. A 18, 1864–1868 (2000) https://doi.org/10.1116/1.582437

Abstract

View articletitled, Growth of carbon nanotubes by microwave plasma-enhanced chemical vapor deposition at low temperature

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ORGANIC ELECTRONIC MATERIALS/ELECTRONIC MATERIALS AND PROCESSING/APPLIED SURFACE SCIENCE

Influence of copper phthalocynanine on the charge injection and growth modes for organic light emitting diodes

E. W. Forsythe; M. A. Abkowitz; Yongli Gao; C. W. Tang

J. Vac. Sci. Technol. A 18, 1869–1874 (2000) https://doi.org/10.1116/1.582438

Abstract

View articletitled, Influence of copper phthalocynanine on the charge injection and growth modes for organic light emitting diodes

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Growth and characterization of poly(arylamine) thin films prepared by vapor deposition

G. J. Szulczewski; T. D. Selby; K.-Y. Kim; J. D. Hassenzahl; S. C. Blackstock

J. Vac. Sci. Technol. A 18, 1875–1880 (2000) https://doi.org/10.1116/1.582439

Abstract

View articletitled, Growth and characterization of poly(arylamine) thin films prepared by vapor deposition

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PLASMA SCIENCE AND TECHNOLOGY/SURFACE SCIENCE

Desorption species from fluorocarbon film by ${Ar}^{+}$ ion beam bombardment

M. Hayashi; K. Karahashi

J. Vac. Sci. Technol. A 18, 1881–1886 (2000) https://doi.org/10.1116/1.582440

Abstract

View articletitled, Desorption species from fluorocarbon film by <math xmlns="http://www.w3.org/1998/Math/MathML"><msup xmlns=""><mi mathvariant="normal">Ar</mi><mrow><mi>+</mi></mrow></msup></math> ion beam bombardment

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SURFACE SCIENCE 1/ELECTRONIC MATERIALS AND PROCESSING

Reactions of maleic anhydride over ${TiO}_{2}$ (001) single crystal surfaces

J. N. Wilson; D. J. Titheridge; L. Kieu; H. Idriss

J. Vac. Sci. Technol. A 18, 1887–1892 (2000) https://doi.org/10.1116/1.582441

Abstract

View articletitled, Reactions of maleic anhydride over <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">TiO</mi><mrow><mn>2</mn></mrow></msub></math> (001) single crystal surfaces

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Interaction of HCOOH with stoichiometric and reduced ${SrTiO}_{3} (100)$ surfaces

Li-Qiong Wang; K. F. Ferris; G. S. Herman; M. H. Engelhard

J. Vac. Sci. Technol. A 18, 1893–1899 (2000) https://doi.org/10.1116/1.582442

Abstract

View articletitled, Interaction of HCOOH with stoichiometric and reduced <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SrTiO</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub><mi mathvariant="normal" xmlns="">(100)</mi></math> surfaces

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Reactions of acetic acid on ${UO}_{2} (111)$ single crystal surfaces

S. V. Chong; H. Idriss

J. Vac. Sci. Technol. A 18, 1900–1905 (2000) https://doi.org/10.1116/1.582443

Abstract

View articletitled, Reactions of acetic acid on <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">UO</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><mi mathvariant="normal" xmlns="">(111)</mi></math> single crystal surfaces

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Surface reduction of ${Cr–V}_{2} O_{3}$ by CO

David S. Toledano; Victor E. Henrich; Patricia Metcalf

J. Vac. Sci. Technol. A 18, 1906–1914 (2000) https://doi.org/10.1116/1.582444