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REGULAR ARTICLES

J. Vac. Sci. Technol. A 18, 295–298 (2000) https://doi.org/10.1116/1.582182
J. Vac. Sci. Technol. A 18, 299–305 (2000) https://doi.org/10.1116/1.582183
J. Vac. Sci. Technol. A 18, 306–311 (2000) https://doi.org/10.1116/1.582184
J. Vac. Sci. Technol. A 18, 312–319 (2000) https://doi.org/10.1116/1.582185
J. Vac. Sci. Technol. A 18, 320–324 (2000) https://doi.org/10.1116/1.582186
J. Vac. Sci. Technol. A 18, 325–328 (2000) https://doi.org/10.1116/1.582187
J. Vac. Sci. Technol. A 18, 329–333 (2000) https://doi.org/10.1116/1.582188
J. Vac. Sci. Technol. A 18, 334–337 (2000) https://doi.org/10.1116/1.582251
J. Vac. Sci. Technol. A 18, 338–342 (2000) https://doi.org/10.1116/1.582189
J. Vac. Sci. Technol. A 18, 343–348 (2000) https://doi.org/10.1116/1.582190
J. Vac. Sci. Technol. A 18, 349–355 (2000) https://doi.org/10.1116/1.582191
J. Vac. Sci. Technol. A 18, 356–360 (2000) https://doi.org/10.1116/1.582192
J. Vac. Sci. Technol. A 18, 361–366 (2000) https://doi.org/10.1116/1.582193
J. Vac. Sci. Technol. A 18, 367–371 (2000) https://doi.org/10.1116/1.582194
J. Vac. Sci. Technol. A 18, 372–376 (2000) https://doi.org/10.1116/1.582195
J. Vac. Sci. Technol. A 18, 377–384 (2000) https://doi.org/10.1116/1.582196
J. Vac. Sci. Technol. A 18, 385–387 (2000) https://doi.org/10.1116/1.582197
J. Vac. Sci. Technol. A 18, 388–392 (2000) https://doi.org/10.1116/1.582198
J. Vac. Sci. Technol. A 18, 393–400 (2000) https://doi.org/10.1116/1.582199
J. Vac. Sci. Technol. A 18, 401–404 (2000) https://doi.org/10.1116/1.582200
J. Vac. Sci. Technol. A 18, 405–410 (2000) https://doi.org/10.1116/1.582201
J. Vac. Sci. Technol. A 18, 411–416 (2000) https://doi.org/10.1116/1.582202
J. Vac. Sci. Technol. A 18, 417–422 (2000) https://doi.org/10.1116/1.582203
J. Vac. Sci. Technol. A 18, 423–434 (2000) https://doi.org/10.1116/1.582204
J. Vac. Sci. Technol. A 18, 435–437 (2000) https://doi.org/10.1116/1.582205
J. Vac. Sci. Technol. A 18, 438–449 (2000) https://doi.org/10.1116/1.582206
J. Vac. Sci. Technol. A 18, 450–456 (2000) https://doi.org/10.1116/1.582207
J. Vac. Sci. Technol. A 18, 457–460 (2000) https://doi.org/10.1116/1.582208
J. Vac. Sci. Technol. A 18, 461–464 (2000) https://doi.org/10.1116/1.582209
J. Vac. Sci. Technol. A 18, 465–469 (2000) https://doi.org/10.1116/1.582210
J. Vac. Sci. Technol. A 18, 470–476 (2000) https://doi.org/10.1116/1.582211
J. Vac. Sci. Technol. A 18, 477–484 (2000) https://doi.org/10.1116/1.582212
J. Vac. Sci. Technol. A 18, 485–491 (2000) https://doi.org/10.1116/1.582213
J. Vac. Sci. Technol. A 18, 492–496 (2000) https://doi.org/10.1116/1.582214
J. Vac. Sci. Technol. A 18, 497–502 (2000) https://doi.org/10.1116/1.582215
J. Vac. Sci. Technol. A 18, 503–508 (2000) https://doi.org/10.1116/1.582216
J. Vac. Sci. Technol. A 18, 509–514 (2000) https://doi.org/10.1116/1.582217
J. Vac. Sci. Technol. A 18, 515–523 (2000) https://doi.org/10.1116/1.582218
J. Vac. Sci. Technol. A 18, 524–528 (2000) https://doi.org/10.1116/1.582219
J. Vac. Sci. Technol. A 18, 529–535 (2000) https://doi.org/10.1116/1.582252
J. Vac. Sci. Technol. A 18, 536–542 (2000) https://doi.org/10.1116/1.582220
J. Vac. Sci. Technol. A 18, 543–551 (2000) https://doi.org/10.1116/1.582221

BRIEF REPORTS AND COMMENTS

J. Vac. Sci. Technol. A 18, 552–553 (2000) https://doi.org/10.1116/1.582222

RAPID COMMUNICATIONS

J. Vac. Sci. Technol. A 18, 554–556 (2000) https://doi.org/10.1116/1.582223
J. Vac. Sci. Technol. A 18, 557–559 (2000) https://doi.org/10.1116/1.582224
J. Vac. Sci. Technol. A 18, 560–562 (2000) https://doi.org/10.1116/1.582225
J. Vac. Sci. Technol. A 18, 563–566 (2000) https://doi.org/10.1116/1.582226

SHOP NOTES

J. Vac. Sci. Technol. A 18, 567–569 (2000) https://doi.org/10.1116/1.582227

PAPERS FROM THE NINTH CANADIAN SEMICONDUCTOR TECHNOLOGY CONFERENCE

PHOTONICS
J. Vac. Sci. Technol. A 18, 574–577 (2000) https://doi.org/10.1116/1.582228
J. Vac. Sci. Technol. A 18, 578–581 (2000) https://doi.org/10.1116/1.582229
J. Vac. Sci. Technol. A 18, 582–587 (2000) https://doi.org/10.1116/1.582230
J. Vac. Sci. Technol. A 18, 588–592 (2000) https://doi.org/10.1116/1.582231
J. Vac. Sci. Technol. A 18, 593–596 (2000) https://doi.org/10.1116/1.582232
J. Vac. Sci. Technol. A 18, 597–600 (2000) https://doi.org/10.1116/1.582233
J. Vac. Sci. Technol. A 18, 601–604 (2000) https://doi.org/10.1116/1.582234
J. Vac. Sci. Technol. A 18, 605–609 (2000) https://doi.org/10.1116/1.582235
J. Vac. Sci. Technol. A 18, 610–614 (2000) https://doi.org/10.1116/1.582236

SENSORS

J. Vac. Sci. Technol. A 18, 615–620 (2000) https://doi.org/10.1116/1.582237
J. Vac. Sci. Technol. A 18, 621–625 (2000) https://doi.org/10.1116/1.582238
J. Vac. Sci. Technol. A 18, 626–629 (2000) https://doi.org/10.1116/1.582253
J. Vac. Sci. Technol. A 18, 630–634 (2000) https://doi.org/10.1116/1.582239
J. Vac. Sci. Technol. A 18, 635–638 (2000) https://doi.org/10.1116/1.582254
J. Vac. Sci. Technol. A 18, 639–642 (2000) https://doi.org/10.1116/1.582240

EPITAXY

J. Vac. Sci. Technol. A 18, 643–647 (2000) https://doi.org/10.1116/1.582241
J. Vac. Sci. Technol. A 18, 648–651 (2000) https://doi.org/10.1116/1.582242
J. Vac. Sci. Technol. A 18, 652–655 (2000) https://doi.org/10.1116/1.582255

THIN FILMS

J. Vac. Sci. Technol. A 18, 656–660 (2000) https://doi.org/10.1116/1.582243
J. Vac. Sci. Technol. A 18, 661–664 (2000) https://doi.org/10.1116/1.582244
J. Vac. Sci. Technol. A 18, 665–670 (2000) https://doi.org/10.1116/1.582245
J. Vac. Sci. Technol. A 18, 671–675 (2000) https://doi.org/10.1116/1.582246
J. Vac. Sci. Technol. A 18, 676–680 (2000) https://doi.org/10.1116/1.582250
J. Vac. Sci. Technol. A 18, 681–684 (2000) https://doi.org/10.1116/1.582247
J. Vac. Sci. Technol. A 18, 685–687 (2000) https://doi.org/10.1116/1.582248
J. Vac. Sci. Technol. A 18, 688–692 (2000) https://doi.org/10.1116/1.582249

MATERIALS STUDY

J. Vac. Sci. Technol. A 18, 693–696 (2000) https://doi.org/10.1116/1.582159
J. Vac. Sci. Technol. A 18, 697–700 (2000) https://doi.org/10.1116/1.582160
J. Vac. Sci. Technol. A 18, 701–704 (2000) https://doi.org/10.1116/1.582161
J. Vac. Sci. Technol. A 18, 705–708 (2000) https://doi.org/10.1116/1.582162
J. Vac. Sci. Technol. A 18, 709–712 (2000) https://doi.org/10.1116/1.582163
J. Vac. Sci. Technol. A 18, 713–716 (2000) https://doi.org/10.1116/1.582164
J. Vac. Sci. Technol. A 18, 717–719 (2000) https://doi.org/10.1116/1.582165
J. Vac. Sci. Technol. A 18, 720–723 (2000) https://doi.org/10.1116/1.582166
J. Vac. Sci. Technol. A 18, 724–729 (2000) https://doi.org/10.1116/1.582167

MEMS AND MICROFABRICATION

J. Vac. Sci. Technol. A 18, 730–733 (2000) https://doi.org/10.1116/1.582256
J. Vac. Sci. Technol. A 18, 734–737 (2000) https://doi.org/10.1116/1.582168
J. Vac. Sci. Technol. A 18, 738–742 (2000) https://doi.org/10.1116/1.582169
J. Vac. Sci. Technol. A 18, 743–745 (2000) https://doi.org/10.1116/1.582170
J. Vac. Sci. Technol. A 18, 746–749 (2000) https://doi.org/10.1116/1.582171

TRANSISTORS

J. Vac. Sci. Technol. A 18, 750–753 (2000) https://doi.org/10.1116/1.582172
J. Vac. Sci. Technol. A 18, 754–756 (2000) https://doi.org/10.1116/1.582173
J. Vac. Sci. Technol. A 18, 757–760 (2000) https://doi.org/10.1116/1.582174
J. Vac. Sci. Technol. A 18, 761–764 (2000) https://doi.org/10.1116/1.582175
J. Vac. Sci. Technol. A 18, 765–769 (2000) https://doi.org/10.1116/1.582176
J. Vac. Sci. Technol. A 18, 770–774 (2000) https://doi.org/10.1116/1.582177
J. Vac. Sci. Technol. A 18, 775–779 (2000) https://doi.org/10.1116/1.582178
J. Vac. Sci. Technol. A 18, 780–782 (2000) https://doi.org/10.1116/1.582179
J. Vac. Sci. Technol. A 18, 783–786 (2000) https://doi.org/10.1116/1.582180
J. Vac. Sci. Technol. A 18, 787–792 (2000) https://doi.org/10.1116/1.582181
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