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Volume 17, Issue 6

November 1999

ISSN 0734-2101

EISSN 1520-8559

ARTICLES

Cathodic plasma polymerization and treatment by anode magnetron torch: II. The influence of operating parameters on the argon sputtering rate distribution

J. G. Zhao; H. Yasuda

J. Vac. Sci. Technol. A 17, 3157–3165 (1999) https://doi.org/10.1116/1.582065

Abstract

View articletitled, Cathodic plasma polymerization and treatment by anode magnetron torch: II. The influence of operating parameters on the argon sputtering rate distribution

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Moisture stability and structure relaxation processes in plasma-deposited SiOF films

V. Pankov; J. C. Alonso; A. Ortiz

J. Vac. Sci. Technol. A 17, 3166–3171 (1999) https://doi.org/10.1116/1.582111

Abstract

View articletitled, Moisture stability and structure relaxation processes in plasma-deposited SiOF films

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Surface dependent electron and negative ion density in inductively coupled discharges

G. A. Hebner; M. G. Blain; T. W. Hamilton; C. A. Nichols; R. L. Jarecki

J. Vac. Sci. Technol. A 17, 3172–3178 (1999) https://doi.org/10.1116/1.582040

Abstract

View articletitled, Surface dependent electron and negative ion density in inductively coupled discharges

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Highly selective etching of silicon nitride over silicon and silicon dioxide

B. E. E. Kastenmeier; P. J. Matsuo; G. S. Oehrlein

J. Vac. Sci. Technol. A 17, 3179–3184 (1999) https://doi.org/10.1116/1.582097

Abstract

View articletitled, Highly selective etching of silicon nitride over silicon and silicon dioxide

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Monolayer-level controlled incorporation of nitrogen at ${Si–SiO}_{2}$ interfaces using remote plasma processing

H. Niimi; G. Lucovsky

J. Vac. Sci. Technol. A 17, 3185–3196 (1999) https://doi.org/10.1116/1.582041

Abstract

View articletitled, Monolayer-level controlled incorporation of nitrogen at <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Si–SiO</mi><mrow><mn>2</mn></mrow></msub></math> interfaces using remote plasma processing

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Atomic hydrogen temperature in silane plasmas used for the deposition of a-Si:H films

K. Miyazaki; T. Kajiwara; K. Uchino; K. Muraoka; T. Okada; M. Maeda

J. Vac. Sci. Technol. A 17, 3197–3201 (1999) https://doi.org/10.1116/1.582042

Abstract

View articletitled, Atomic hydrogen temperature in silane plasmas used for the deposition of a-Si:H films

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Properties of a-Si:H films deposited from silane diluted with hydrogen and helium using modified pulse plasma technique

C. Mukherjee; C. Anandan; T. Seth; P. N. Dixit; R. Bhattacharyya

J. Vac. Sci. Technol. A 17, 3202–3208 (1999) https://doi.org/10.1116/1.582043

Abstract

View articletitled, Properties of a-Si:H films deposited from silane diluted with hydrogen and helium using modified pulse plasma technique

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Absolute intensities of the vacuum ultraviolet spectra in a metal-etch plasma processing discharge

J. R. Woodworth; M. G. Blain; R. L. Jarecki; T. W. Hamilton; B. P. Aragon

J. Vac. Sci. Technol. A 17, 3209–3217 (1999) https://doi.org/10.1116/1.582044

Abstract

View articletitled, Absolute intensities of the vacuum ultraviolet spectra in a metal-etch plasma processing discharge

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Influence of surface material on the boron chloride density in inductively coupled discharges

G. A. Hebner; M. G. Blain; T. W. Hamilton

J. Vac. Sci. Technol. A 17, 3218–3224 (1999) https://doi.org/10.1116/1.582045

Abstract

View articletitled, Influence of surface material on the boron chloride density in inductively coupled discharges

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Production of highly uniform electron cyclotron resonance plasmas by distribution control of the microwave electric field

Muneo Furuse; Seiichi Watanabe; Hitoshi Tamura; Osamu Fukumasa

J. Vac. Sci. Technol. A 17, 3225–3229 (1999) https://doi.org/10.1116/1.582046

Abstract

View articletitled, Production of highly uniform electron cyclotron resonance plasmas by distribution control of the microwave electric field

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Deposition and 1.54 μm ${Er}^{3+}$ luminescent properties of erbium-doped hydrogenated amorphous silicon thin films by electron cyclotron resonance plasma enhanced chemical vapor deposition of ${SiH}_{4}$ with concurrent sputtering of erbium

Jung H. Shin; Mun-Jun Kim

J. Vac. Sci. Technol. A 17, 3230–3234 (1999) https://doi.org/10.1116/1.582047

Abstract

View articletitled, Deposition and 1.54 μm <math xmlns="http://www.w3.org/1998/Math/MathML"><msup xmlns=""><mi mathvariant="normal">Er</mi><mrow><mtext>3+</mtext></mrow></msup></math> luminescent properties of erbium-doped hydrogenated amorphous silicon thin films by electron cyclotron resonance plasma enhanced chemical vapor deposition of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SiH</mi><mrow><mn>4</mn></mrow></msub></math> with concurrent sputtering of erbium

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Effects of deposition conditions on the fluorine and hydrogen concentration in tantalum pentoxide $({Ta}_{2} O_{5})$ thin films prepared by plasma enhanced chemical vapor deposition using a tantalum pentafluoride ${(TaF}_{5})$ source

E. Z. Luo; B. Sundaravel; H. Y. Guo; I. H. Wilson; S. Four; R. A. B. Devine

J. Vac. Sci. Technol. A 17, 3235–3239 (1999) https://doi.org/10.1116/1.582048

Abstract

View articletitled, Effects of deposition conditions on the fluorine and hydrogen concentration in tantalum pentoxide <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">(</mi><msub xmlns=""><mi mathvariant="normal">Ta</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mi mathvariant="normal">5</mi></mrow></msub><mi xmlns="">)</mi></math> thin films prepared by plasma enhanced chemical vapor deposition using a tantalum pentafluoride <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">(TaF</mi><mrow><mi mathvariant="normal">5</mi></mrow></msub><mi xmlns="">)</mi></math> source

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Effects of silicon–hydrogen bond characteristics on the crystallization of hydrogenated amorphous silicon films prepared by plasma enhanced chemical vapor deposition

Hae-Yeol Kim; Jae-Beom Choi; Jai-Young Lee

J. Vac. Sci. Technol. A 17, 3240–3245 (1999) https://doi.org/10.1116/1.582049

Abstract

View articletitled, Effects of silicon–hydrogen bond characteristics on the crystallization of hydrogenated amorphous silicon films prepared by plasma enhanced chemical vapor deposition

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Low-energy xenon ion sputtering of ceramics investigated for stationary plasma thrusters

Y. Garnier; V. Viel; J.-F. Roussel; J. Bernard

J. Vac. Sci. Technol. A 17, 3246–3254 (1999) https://doi.org/10.1116/1.582050

Abstract

View articletitled, Low-energy xenon ion sputtering of ceramics investigated for stationary plasma thrusters

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Dynamic mixing deposition/implantation in a plasma immersion configuration

X. B. Tian; T. Zhang; Z. M. Zeng; B. Y. Tang; P. K. Chu

J. Vac. Sci. Technol. A 17, 3255–3259 (1999) https://doi.org/10.1116/1.582051

Abstract

View articletitled, Dynamic mixing deposition/implantation in a plasma immersion configuration

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Silicon oxide selective etching process keeping harmony with environment by using radical injection technique

Kazushi Fujita; Masafumi Ito; Masaru Hori; Toshio Goto

J. Vac. Sci. Technol. A 17, 3260–3264 (1999) https://doi.org/10.1116/1.582052

Abstract

View articletitled, Silicon oxide selective etching process keeping harmony with environment by using radical injection technique

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Plasma chemistry in fluorocarbon film deposition from pentafluoroethane/argon mixtures

Sairam Agraharam; Dennis W. Hess; Paul A. Kohl; Sue A. Bidstrup Allen

J. Vac. Sci. Technol. A 17, 3265–3271 (1999) https://doi.org/10.1116/1.582053

Abstract

View articletitled, Plasma chemistry in fluorocarbon film deposition from pentafluoroethane/argon mixtures

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Effect of capacitive coupling on inductively coupled fluorocarbon plasma processing

M. Schaepkens; N. R. Rueger; J. J. Beulens; X. Li; T. E. F. M. Standaert; P. J. Matsuo; G. S. Oehrlein

J. Vac. Sci. Technol. A 17, 3272–3280 (1999) https://doi.org/10.1116/1.582054

Abstract

View articletitled, Effect of capacitive coupling on inductively coupled fluorocarbon plasma processing

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Electrical control of the spatial uniformity of reactive species in plasmas

Mark A. Sobolewski; Kristen L. Steffens

J. Vac. Sci. Technol. A 17, 3281–3292 (1999) https://doi.org/10.1116/1.582055

Abstract

View articletitled, Electrical control of the spatial uniformity of reactive species in plasmas

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Hardmask charging during ${Cl}_{2}$ plasma etching of silicon

M. A. Vyvoda; M. Li; D. B. Graves

J. Vac. Sci. Technol. A 17, 3293–3307 (1999) https://doi.org/10.1116/1.582056

Abstract

View articletitled, Hardmask charging during <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Cl</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math> plasma etching of silicon

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Study of CN films synthesized by facing target sputtering

Yi Wang; E. Y. Jiang; H. L. Bai; P. Wu

J. Vac. Sci. Technol. A 17, 3308–3311 (1999) https://doi.org/10.1116/1.582057

Abstract

View articletitled, Study of CN films synthesized by facing target sputtering

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Fine control of deposition film compositions using radio-frequency reactive sputtering with periodic gas additions

Shoji Kimura; Takuya Honda; Daigo Fukushi

J. Vac. Sci. Technol. A 17, 3312–3316 (1999) https://doi.org/10.1116/1.582058

Abstract

View articletitled, Fine control of deposition film compositions using radio-frequency reactive sputtering with periodic gas additions

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Glow discharge mass spectrometry study of the deposition of ${TiO}_{2}$ thin films by direct current reactive magnetron sputtering of a Ti target

V. Vancoppenolle; P.-Y. Jouan; M. Wautelet; J.-P. Dauchot; M. Hecq

J. Vac. Sci. Technol. A 17, 3317–3321 (1999) https://doi.org/10.1116/1.582059

Abstract

View articletitled, Glow discharge mass spectrometry study of the deposition of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">TiO</mi><mrow><mn>2</mn></mrow></msub></math> thin films by direct current reactive magnetron sputtering of a Ti target

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Pulsed bias magnetron sputtering of thin films on insulators

Edward Barnat; T.-M. Lu

J. Vac. Sci. Technol. A 17, 3322–3326 (1999) https://doi.org/10.1116/1.582060

Abstract

View articletitled, Pulsed bias magnetron sputtering of thin films on insulators

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Material characteristics and thermal stability of cosputtered Ta–Ru thin films

D. S. Wuu; C. C. Chan; R. H. Horng

J. Vac. Sci. Technol. A 17, 3327–3332 (1999) https://doi.org/10.1116/1.582061

Abstract

View articletitled, Material characteristics and thermal stability of cosputtered Ta–Ru thin films

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Hollow cathode magnetrons with target gas feed

J. W. Bradley; D. M. Willett; Y. Aranda Gonzalvo

J. Vac. Sci. Technol. A 17, 3333–3339 (1999) https://doi.org/10.1116/1.582062

Abstract

View articletitled, Hollow cathode magnetrons with target gas feed

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Ion-enhanced etching of Si(100) with molecular chlorine: Reaction mechanisms and product yields

Rory S. Goodman; N. Materer; Stephen R. Leone

J. Vac. Sci. Technol. A 17, 3340–3350 (1999) https://doi.org/10.1116/1.582063

Abstract

View articletitled, Ion-enhanced etching of Si(100) with molecular chlorine: Reaction mechanisms and product yields

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Nanoscratch characterization of dual-ion-beam deposited C-doped boron nitride films

K. F. Chan; C. W. Ong; C. L. Choy

J. Vac. Sci. Technol. A 17, 3351–3357 (1999) https://doi.org/10.1116/1.582064

Abstract

View articletitled, Nanoscratch characterization of dual-ion-beam deposited C-doped boron nitride films

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Enhancement of the etch rate of ${LiNbO}_{3}$ by prior bombardment with MeV $O^{2+}$ ions

Patrick W. Leech; Mark C. Ridgway

J. Vac. Sci. Technol. A 17, 3358–3361 (1999) https://doi.org/10.1116/1.582066

Abstract

View articletitled, Enhancement of the etch rate of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">LiNbO</mi><mrow><mn>3</mn></mrow></msub></math> by prior bombardment with MeV <math xmlns="http://www.w3.org/1998/Math/MathML"><msup xmlns=""><mi mathvariant="normal">O</mi><mrow><mtext>2+</mtext></mrow></msup></math> ions

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X-ray photoelectron spectroscopy studies of modified surfaces of $α- {Al}_{2} O_{3},$ ${SiO}_{2},$ and ${Si}_{3} N_{4}$ by low energy reactive ion beam irradiation

Won-Kook Choi; Seok-Keun Koh; Hyung-Jin Jung

J. Vac. Sci. Technol. A 17, 3362–3367 (1999) https://doi.org/10.1116/1.582067

Abstract

View articletitled, X-ray photoelectron spectroscopy studies of modified surfaces of <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">α-</mi><msub xmlns=""><mi mathvariant="normal">Al</mi><mrow><mn>2</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mn>3</mn></mrow></msub><mi xmlns="">,</mi></math> <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SiO</mi><mrow><mn>2</mn></mrow></msub><mi xmlns="">,</mi></math> and <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Si</mi><mrow><mn>3</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">N</mi><mrow><mn>4</mn></mrow></msub></math> by low energy reactive ion beam irradiation

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Reaction layer dynamics in ion-assisted ${Si/XeF}_{2}$ etching: Ion flux dependence

P. G. M. Sebel; L. J. F. Hermans; H. C. W. Beijerinck

J. Vac. Sci. Technol. A 17, 3368–3378 (1999) https://doi.org/10.1116/1.582068

Abstract

View articletitled, Reaction layer dynamics in ion-assisted <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Si/XeF</mi><mrow><mn>2</mn></mrow></msub></math> etching: Ion flux dependence

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Mechanism of columnar microstructure growth in titanium oxide thin films deposited by ion-beam assisted deposition

Qi Tang; Kazuo Kikuchi; Shigetaro Ogura; Angus Macleod

J. Vac. Sci. Technol. A 17, 3379–3384 (1999) https://doi.org/10.1116/1.582069

Abstract

View articletitled, Mechanism of columnar microstructure growth in titanium oxide thin films deposited by ion-beam assisted deposition

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Laser-induced particle formation and coalescence in a methane discharge

W. W. Stoffels; E. Stoffels; G. Ceccone; F. Rossi

J. Vac. Sci. Technol. A 17, 3385–3392 (1999) https://doi.org/10.1116/1.582070

Abstract

View articletitled, Laser-induced particle formation and coalescence in a methane discharge

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Growth of single crystal MgO on TiN/Si heterostructure by pulsed laser deposition

A. K. Sharma; A. Kvit; J. Narayan

J. Vac. Sci. Technol. A 17, 3393–3396 (1999) https://doi.org/10.1116/1.582071

Abstract

View articletitled, Growth of single crystal MgO on TiN/Si heterostructure by pulsed laser deposition

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Properties of $Y_{2} O_{3}$ nanocluster films deposited by Cu-vapor laser at room temperature

L. N. Dinh; K. D. Frischknecht; M. A. Schildbach; T. Anklam; W. McLean, II

J. Vac. Sci. Technol. A 17, 3397–3400 (1999) https://doi.org/10.1116/1.582072

Abstract

View articletitled, Properties of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Y</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub></math> nanocluster films deposited by Cu-vapor laser at room temperature

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INA-X: A novel instrument for electron-gas secondary neutral mass spectrometry with optional in situ x-ray photoelectron spectroscopy

Hans Oechsner; Matthias Müller

J. Vac. Sci. Technol. A 17, 3401–3405 (1999) https://doi.org/10.1116/1.582073

Abstract

View articletitled, INA-X: A novel instrument for electron-gas secondary neutral mass spectrometry with optional in situ x-ray photoelectron spectroscopy

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Preparation and mechanical properties of composite diamond-like carbon thin films

Q. Wei; R. J. Narayan; A. K. Sharma; J. Sankar; J. Narayan

J. Vac. Sci. Technol. A 17, 3406–3414 (1999) https://doi.org/10.1116/1.582074

Abstract

View articletitled, Preparation and mechanical properties of composite diamond-like carbon thin films

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Metal overlayers on organic functional groups of self-assembled monolayers: VIII. X-ray photoelectron spectroscopy of the Ni/COOH interface

G. C. Herdt; A. W. Czanderna

J. Vac. Sci. Technol. A 17, 3415–3418 (1999) https://doi.org/10.1116/1.582075

Abstract

View articletitled, Metal overlayers on organic functional groups of self-assembled monolayers: VIII. X-ray photoelectron spectroscopy of the Ni/COOH interface

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Fourier transform infrared spectroscopy of effluents from pulsed plasmas of 1,1,2,2-tetrafluoroethane, hexafluoropropylene oxide, and difluoromethane

Catherine B. Labelle; Simon M. Karecki; Rafael Reif; Karen K. Gleason

J. Vac. Sci. Technol. A 17, 3419–3428 (1999) https://doi.org/10.1116/1.582076

Abstract

View articletitled, Fourier transform infrared spectroscopy of effluents from pulsed plasmas of 1,1,2,2-tetrafluoroethane, hexafluoropropylene oxide, and difluoromethane

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Interface analysis of naphthyl-substituted benzidine derivative and tris-8-(hydroxyquinoline) aluminum using ultraviolet and x-ray photoemission spectroscopy

E. W. Forsythe; V.-E. Choong; T. Q. Le; Yongli Gao

J. Vac. Sci. Technol. A 17, 3429–3432 (1999) https://doi.org/10.1116/1.582077

Abstract

View articletitled, Interface analysis of naphthyl-substituted benzidine derivative and tris-8-(hydroxyquinoline) aluminum using ultraviolet and x-ray photoemission spectroscopy

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Optoelectronic properties of polycrystalline CdInTe films

A. Iribarren; I. Riech; M. P. Hernández; R. Castro-Rodríguez; J. L. Peña; M. Zapata-Torres

J. Vac. Sci. Technol. A 17, 3433–3436 (1999) https://doi.org/10.1116/1.582078

Abstract

View articletitled, Optoelectronic properties of polycrystalline CdInTe films

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Low-energy cathodoluminescence spectroscopy of erbium-doped gallium nitride surfaces

T. M. Levin; A. P. Young; J. Schäfer; L. J. Brillson; J. D. MacKenzie; C. R. Abernathy

J. Vac. Sci. Technol. A 17, 3437–3442 (1999) https://doi.org/10.1116/1.582079

Abstract

View articletitled, Low-energy cathodoluminescence spectroscopy of erbium-doped gallium nitride surfaces

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Low-energy ${Ar}^{+}$ ion induced angularly resolved Al(100) and Al(110) sputtering measurements

P. C. Smith; D. N. Ruzic

J. Vac. Sci. Technol. A 17, 3443–3448 (1999) https://doi.org/10.1116/1.582080

Abstract

View articletitled, Low-energy <math xmlns="http://www.w3.org/1998/Math/MathML"><msup xmlns=""><mi mathvariant="normal">Ar</mi><mrow><mi mathvariant="normal">+</mi></mrow></msup></math> ion induced angularly resolved Al(100) and Al(110) sputtering measurements

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Ni–Cr passivation of very thin Ag films for low-emissivity multilayer coatings

R. J. Martín-Palma; J. M. Martínez-Duart

J. Vac. Sci. Technol. A 17, 3449–3451 (1999) https://doi.org/10.1116/1.582081

Abstract

View articletitled, Ni–Cr passivation of very thin Ag films for low-emissivity multilayer coatings

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Problems of determining true equilibrium pressures of hydrogen getters over a wide range of getter temperature and hydrogen sorption

F. Ghezzi; M. De Angeli

J. Vac. Sci. Technol. A 17, 3452–3462 (1999) https://doi.org/10.1116/1.582082

Abstract

View articletitled, Problems of determining true equilibrium pressures of hydrogen getters over a wide range of getter temperature and hydrogen sorption

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Oxygen doping effect on Ge–Sb–Te phase change optical disks

Atsushi Ebina; Masao Hirasaka; Kenji Nakatani

J. Vac. Sci. Technol. A 17, 3463–3466 (1999) https://doi.org/10.1116/1.582083

Abstract

View articletitled, Oxygen doping effect on Ge–Sb–Te phase change optical disks

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Separation of electron-stimulated-desorption neutrals from outgassing originating from the grid surface of emission-controlled gauges: Studies with a heated-grid gauge

Fumio Watanabe; Maki Suemitsu

J. Vac. Sci. Technol. A 17, 3467–3472 (1999) https://doi.org/10.1116/1.582084

Abstract

View articletitled, Separation of electron-stimulated-desorption neutrals from outgassing originating from the grid surface of emission-controlled gauges: Studies with a heated-grid gauge

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Growth habit of rhombohedral Bi thin films on zinc-blende CdTe substrates with various orientations

Yunki Kim; Sunglae Cho; Antonio DiVenere; George K. Wong; John B. Ketterson

J. Vac. Sci. Technol. A 17, 3473–3476 (1999) https://doi.org/10.1116/1.582085

Abstract

View articletitled, Growth habit of rhombohedral Bi thin films on zinc-blende CdTe substrates with various orientations

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Surface reaction pathways of 1,1,1,5,5,5-hexafluoro-2,4-pentanedione on clean and pre-oxidized Ni(110) surfaces

H. L. Nigg; R. I. Masel

J. Vac. Sci. Technol. A 17, 3477–3480 (1999) https://doi.org/10.1116/1.582086

Abstract

View articletitled, Surface reaction pathways of 1,1,1,5,5,5-hexafluoro-2,4-pentanedione on clean and pre-oxidized Ni(110) surfaces

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In situ atomic force microscope observation of initial stages of corrosion at 18Cr–8Ni stainless steel

F. Katsuki; M. Matsuda; M. Matsumoto; T. Tomida

J. Vac. Sci. Technol. A 17, 3481–3485 (1999) https://doi.org/10.1116/1.582087

Abstract

View articletitled, In situ atomic force microscope observation of initial stages of corrosion at 18Cr–8Ni stainless steel

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Tau–Charm factory vacuum chamber design

V. Antropov; E. Perelstein; M. Sazonov; B. Garke; N. Schindler; C. Edelmann

J. Vac. Sci. Technol. A 17, 3486–3494 (1999) https://doi.org/10.1116/1.582088

Abstract

View articletitled, Tau–Charm factory vacuum chamber design

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Excitation states of titanium and nitrogen gas in an electron beam evaporation sustained arc

S. Q. Xiao; K. Tsuzuki; H. Sugimura; O. Takai

J. Vac. Sci. Technol. A 17, 3495–3499 (1999) https://doi.org/10.1116/1.582089

Abstract

View articletitled, Excitation states of titanium and nitrogen gas in an electron beam evaporation sustained arc

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Development of an all-metal vacuum bellows following twist motion

Yusuke Suetsugu; Masamitsu Shiraishi; Takashi Mishiba; Yuici Ohno

J. Vac. Sci. Technol. A 17, 3500–3504 (1999) https://doi.org/10.1116/1.582090

Abstract

View articletitled, Development of an all-metal vacuum bellows following twist motion

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Innovation of the fore pump and roughing pump for high-gas-flow semiconductor processing

Isao Akutsu; Tadahiro Ohmi

J. Vac. Sci. Technol. A 17, 3505–3508 (1999) https://doi.org/10.1116/1.582091

Abstract

View articletitled, Innovation of the fore pump and roughing pump for high-gas-flow semiconductor processing

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Influence of vacuum environment on the aging of phosphors at low electron energies

C. H. Seager; D. R. Tallant; L. Shea; K. R. Zavadil; B. Gnade; P. H. Holloway; J. S. Bang; X. M. Zhang; A. Vecht; C. S. Gibbons; P. Trwoga; C. Summers; B. Wagner; J. Penczek

J. Vac. Sci. Technol. A 17, 3509–3515 (1999) https://doi.org/10.1116/1.582032

Abstract

View articletitled, Influence of vacuum environment on the aging of phosphors at low electron energies

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Surface perturbation target for the Rayleigh–Taylor instability in inertial-confinement fusion experiments

Bin Zhou; Jue Wang; Jun Shen; Zhongsheng Deng; Zhenquan Lai; Lingyan Chen; Yulong Zhang

J. Vac. Sci. Technol. A 17, 3516–3520 (1999) https://doi.org/10.1116/1.582092

Abstract

View articletitled, Surface perturbation target for the Rayleigh–Taylor instability in inertial-confinement fusion experiments

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Role of boundary conditions at the anode in the development of an electric field induced avalanche in a gas at low pressure

V. Pletnev; S. Zukotynski

J. Vac. Sci. Technol. A 17, 3521–3524 (1999) https://doi.org/10.1116/1.582093

Abstract

View articletitled, Role of boundary conditions at the anode in the development of an electric field induced avalanche in a gas at low pressure

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RAPID COMMUNICATIONS

High quality low roughness niobium thin films made by electron cyclotron resonance technique

Antonio Esposito; Hiroshi Nakagawa; Hiroshi Akoh; Susumu Takada

J. Vac. Sci. Technol. A 17, 3525–3528 (1999) https://doi.org/10.1116/1.582094

Abstract

View articletitled, High quality low roughness niobium thin films made by electron cyclotron resonance technique

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Low-cost alternative to motorized linear and rotary motion feedthroughs

P. R. McCabe; A. L. Utz

J. Vac. Sci. Technol. A 17, 3529 (1999) https://doi.org/10.1116/1.582095

Abstract

View articletitled, Low-cost alternative to motorized linear and rotary motion feedthroughs

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ERRATA

Erratum: “Temperature dependence of reflection high-energy electron diffraction intensity from Si(111)-7×7 superlattice” [J. Vac. Sci. Technol. A 15, 2569 (1997)]

K. Yamaguchi; H. Mitsui; Y. Shigeta

J. Vac. Sci. Technol. A 17, 3530 (1999) https://doi.org/10.1116/1.582096

View articletitled, Erratum: “Temperature dependence of reflection high-energy electron diffraction intensity from Si(111)-7×7 superlattice” [J. Vac. Sci. Technol. A 15, 2569 (1997)]

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