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REVIEW ARTICLE

The search for novel, superhard materials

Stan Vepřek

J. Vac. Sci. Technol. A 17, 2401–2420 (1999) https://doi.org/10.1116/1.581977

Abstract

View articletitled, The search for novel, superhard materials

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REGULAR ARTICLES

Consequences of mode structure on plasma properties in electron cyclotron resonance sources

Ronald L. Kinder; Mark J. Kushner

J. Vac. Sci. Technol. A 17, 2421–2430 (1999) https://doi.org/10.1116/1.581978

Abstract

View articletitled, Consequences of mode structure on plasma properties in electron cyclotron resonance sources

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Silicon etching in ${NF}_{3} {/O}_{2}$ remote microwave plasmas

P. J. Matsuo; B. E. E. Kastenmeier; G. S. Oehrlein; J. G. Langan

J. Vac. Sci. Technol. A 17, 2431–2437 (1999) https://doi.org/10.1116/1.581979

Abstract

View articletitled, Silicon etching in <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">NF</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">/O</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math> remote microwave plasmas

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Mass spectrometric measurements on inductively coupled fluorocarbon plasmas: Positive ions, radicals and endpoint detection

Xi Li; Marc Schaepkens; Gottlieb S. Oehrlein; Robert E. Ellefson; Louis C. Frees; Norbert Mueller; Norman Korner

J. Vac. Sci. Technol. A 17, 2438–2446 (1999) https://doi.org/10.1116/1.581980

Abstract

View articletitled, Mass spectrometric measurements on inductively coupled fluorocarbon plasmas: Positive ions, radicals and endpoint detection

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Mass spectrometric detection of reactive neutral species: Beam-to-background ratio

Harmeet Singh; John W. Coburn; David B. Graves

J. Vac. Sci. Technol. A 17, 2447–2455 (1999) https://doi.org/10.1116/1.581981

Abstract

View articletitled, Mass spectrometric detection of reactive neutral species: Beam-to-background ratio

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Investigation of 4% carbon in hydrogen electron cyclotron resonance microwave plasmas using ethane as the source gas

S. F. Webb; G. A. Gaddy; Rik Blumenthal

J. Vac. Sci. Technol. A 17, 2456–2462 (1999) https://doi.org/10.1116/1.581982

Abstract

View articletitled, Investigation of 4% carbon in hydrogen electron cyclotron resonance microwave plasmas using ethane as the source gas

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Differences in radical generation due to chemical bonding of gas molecules in a high-density fluorocarbon plasma: Effects of the $C=C$ bond in fluorocarbon gases

Seiji Samukawa; Tomonori Mukai

J. Vac. Sci. Technol. A 17, 2463–2466 (1999) https://doi.org/10.1116/1.581983

Abstract

View articletitled, Differences in radical generation due to chemical bonding of gas molecules in a high-density fluorocarbon plasma: Effects of the <math xmlns="http://www.w3.org/1998/Math/MathML"><mi mathvariant="normal" xmlns="">C=C</mi></math> bond in fluorocarbon gases

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Reactive ion etching of piezoelectric ${Pb(Zr}_{x} {Ti}_{1−x}) O_{3}$ in a ${SF}_{6}$ plasma

M. Bale; R. E. Palmer

J. Vac. Sci. Technol. A 17, 2467–2469 (1999) https://doi.org/10.1116/1.581984

Abstract

View articletitled, Reactive ion etching of piezoelectric <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Pb(Zr</mi><mrow><mi>x</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ti</mi><mrow><mtext>1−x</mtext></mrow></msub><mi xmlns="">)</mi><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub></math> in a <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SF</mi><mrow><mi mathvariant="normal">6</mi></mrow></msub></math> plasma

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Experimental investigation of the respective roles of oxygen atoms and electrons in the deposition of ${SiO}_{2}$ in $O_{2}$ /TEOS helicon plasmas

A. Granier; C. Vallée; A. Goullet; K. Aumaille; G. Turban

J. Vac. Sci. Technol. A 17, 2470–2474 (1999) https://doi.org/10.1116/1.581985

Abstract

View articletitled, Experimental investigation of the respective roles of oxygen atoms and electrons in the deposition of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SiO</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math> in <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math>/TEOS helicon plasmas

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Pulsed and continuous wave plasma deposition of amorphous, hydrogenated silicon carbide from ${SiH}_{4} / {CH}_{4}$ plasmas

Patrick R. McCurdy; Jason M. Truitt; Ellen R. Fisher

J. Vac. Sci. Technol. A 17, 2475–2484 (1999) https://doi.org/10.1116/1.582105

Abstract

View articletitled, Pulsed and continuous wave plasma deposition of amorphous, hydrogenated silicon carbide from <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SiH</mi><mrow><mn>4</mn></mrow></msub><mi xmlns="">/</mi><msub xmlns=""><mi mathvariant="normal">CH</mi><mrow><mn>4</mn></mrow></msub></math> plasmas

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Analytical modeling of silicon etch process in high density plasma

Shahram Abdollahi-Alibeik; James P. McVittie; Krishna C. Saraswat; Valeriy Sukharev; Philippe Schoenborn

J. Vac. Sci. Technol. A 17, 2485–2491 (1999) https://doi.org/10.1116/1.581986

Abstract

View articletitled, Analytical modeling of silicon etch process in high density plasma

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Selective etching of ${SiO}_{2}$ over polycrystalline silicon using ${CHF}_{3}$ in an inductively coupled plasma reactor

N. R. Rueger; M. F. Doemling; M. Schaepkens; J. J. Beulens; T. E. F. M. Standaert; G. S. Oehrlein

J. Vac. Sci. Technol. A 17, 2492–2502 (1999) https://doi.org/10.1116/1.581987

Abstract

View articletitled, Selective etching of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SiO</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math> over polycrystalline silicon using <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">CHF</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub></math> in an inductively coupled plasma reactor

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Reactive ion etching for mesa structuring in HgCdTe

E. P. G. Smith; C. A. Musca; D. A. Redfern; J. M. Dell; L. Faraone

J. Vac. Sci. Technol. A 17, 2503–2509 (1999) https://doi.org/10.1116/1.581988

Abstract

View articletitled, Reactive ion etching for mesa structuring in HgCdTe

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Two-dimensional CT images of two-frequency capacitively coupled plasma

T. Kitajima; Y. Takeo; T. Makabe

J. Vac. Sci. Technol. A 17, 2510–2516 (1999) https://doi.org/10.1116/1.581989

Abstract

View articletitled, Two-dimensional CT images of two-frequency capacitively coupled plasma

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Mechanism of fluorine reduction in $C_{4} F_{8} /Ar$ parallel-plate-type electron-cyclotron-resonance plasma by a Si top plate

Hisataka Hayashi; Mitsuru Okigawa; Satoshi Morishita; Makoto Sekine

J. Vac. Sci. Technol. A 17, 2517–2524 (1999) https://doi.org/10.1116/1.581990

Abstract

View articletitled, Mechanism of fluorine reduction in <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">C</mi><mrow><mi mathvariant="normal">4</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">F</mi><mrow><mi mathvariant="normal">8</mi></mrow></msub><mi mathvariant="normal" xmlns="">/Ar</mi></math> parallel-plate-type electron-cyclotron-resonance plasma by a Si top plate

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Characterization and enhanced properties of plasma immersion ion processed diamond-like carbon films

X. M. He; J.-F. Bardeau; K. C. Walter; M. Nastasi

J. Vac. Sci. Technol. A 17, 2525–2530 (1999) https://doi.org/10.1116/1.581991

Abstract

View articletitled, Characterization and enhanced properties of plasma immersion ion processed diamond-like carbon films

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Investigations of different dry etching methods on ${LaAlO}_{3}$

J. Dienelt; K. Zimmer; F. Bigl; R. Höhne

J. Vac. Sci. Technol. A 17, 2531–2534 (1999) https://doi.org/10.1116/1.581992

Abstract

View articletitled, Investigations of different dry etching methods on <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">LaAlO</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub></math>

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Optimization of hardness by the control of microwave power in TiN thin film deposited by electron cyclotron resonance assisted sputtering in a nitrogen plasma

Carl Carney; Delcie Durham

J. Vac. Sci. Technol. A 17, 2535–2541 (1999) https://doi.org/10.1116/1.581993

Abstract

View articletitled, Optimization of hardness by the control of microwave power in TiN thin film deposited by electron cyclotron resonance assisted sputtering in a nitrogen plasma

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Low temperature polycrystalline silicon film formation with and without charged species in an electron cyclotron resonance ${SiH}_{4} / H_{2}$ plasma-enhanced chemical vapor deposition

Ryoichi Nozawa; Kazuya Murata; Masafumi Ito; Masaru Hori; Toshio Goto

J. Vac. Sci. Technol. A 17, 2542–2545 (1999) https://doi.org/10.1116/1.581994

Abstract

View articletitled, Low temperature polycrystalline silicon film formation with and without charged species in an electron cyclotron resonance <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SiH</mi><mrow><mn>4</mn></mrow></msub><mi xmlns="">/</mi><msub xmlns=""><mi mathvariant="normal">H</mi><mrow><mn>2</mn></mrow></msub></math> plasma-enhanced chemical vapor deposition

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Very uniform and high aspect ratio anisotropy ${SiO}_{2}$ etching process in magnetic neutral loop discharge plasma

W. Chen; Y. Morikawa; M. Itoh; T. Hayashi; K. Sugita; H. Shindo; T. Uchida

J. Vac. Sci. Technol. A 17, 2546–2550 (1999) https://doi.org/10.1116/1.581995

Abstract

View articletitled, Very uniform and high aspect ratio anisotropy <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SiO</mi><mrow><mn>2</mn></mrow></msub></math> etching process in magnetic neutral loop discharge plasma

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New radical control method for high-performance dielectric etching with nonperfluorocompound gas chemistries in ultrahigh-frequency plasma

Seiji Samukawa; Tomonori Mukai; Ken-ichiro Tsuda

J. Vac. Sci. Technol. A 17, 2551–2556 (1999) https://doi.org/10.1116/1.581996

Abstract

View articletitled, New radical control method for high-performance dielectric etching with nonperfluorocompound gas chemistries in ultrahigh-frequency plasma

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Mechanism of $C_{4} F_{8}$ dissociation in parallel-plate-type plasma

Hisataka Hayashi; Satoshi Morishita; Tetsuya Tatsumi; Yukinobu Hikosaka; Shuichi Noda; Hideo Nakagawa; Shoji Kobayashi; Masami Inoue; Tyuji Hoshino

J. Vac. Sci. Technol. A 17, 2557–2571 (1999) https://doi.org/10.1116/1.581997

Abstract

View articletitled, Mechanism of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">C</mi><mrow><mn>4</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">F</mi><mrow><mn>8</mn></mrow></msub></math> dissociation in parallel-plate-type plasma

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Operating high-density plasma sources in a low-density range: Applications to metal etch processes

P. Czuprynski; O. Joubert; L. Vallier; N. Sadeghi

J. Vac. Sci. Technol. A 17, 2572–2580 (1999) https://doi.org/10.1116/1.581998

Abstract

View articletitled, Operating high-density plasma sources in a low-density range: Applications to metal etch processes

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Etching polyimide with a nonequilibrium atmospheric-pressure plasma jet

J. Y. Jeong; S. E. Babayan; A. Schütze; V. J. Tu; J. Park; I. Henins; G. S. Selwyn; R. F. Hicks

J. Vac. Sci. Technol. A 17, 2581–2585 (1999) https://doi.org/10.1116/1.581999

Abstract

View articletitled, Etching polyimide with a nonequilibrium atmospheric-pressure plasma jet

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Fourier-transform infrared measurements of ${CHF}_{3} {/O}_{2}$ discharges in an electron cyclotron resonance reactor

M. J. Goeckner; N. A. Goeckner

J. Vac. Sci. Technol. A 17, 2586–2592 (1999) https://doi.org/10.1116/1.582000

Abstract

View articletitled, Fourier-transform infrared measurements of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">CHF</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">/O</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math> discharges in an electron cyclotron resonance reactor

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Characterizing metal-masked silica etch process in a ${CHF}_{3} {/CF}_{4}$ inductively coupled plasma

Byungwhan Kim; Kwang-Ho Kwon; Sang-Ho Park

J. Vac. Sci. Technol. A 17, 2593–2597 (1999) https://doi.org/10.1116/1.581917

Abstract

View articletitled, Characterizing metal-masked silica etch process in a <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">CHF</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">/CF</mi><mrow><mi mathvariant="normal">4</mi></mrow></msub></math> inductively coupled plasma

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Microscopic modeling of InP etching in ${CH}_{4} {–H}_{2}$ plasma

L. Houlet; A. Rhallabi; G. Turban

J. Vac. Sci. Technol. A 17, 2598–2606 (1999) https://doi.org/10.1116/1.581918

Abstract

View articletitled, Microscopic modeling of InP etching in <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">CH</mi><mrow><mi mathvariant="normal">4</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">–H</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math> plasma

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Hydrogenated amorphous carbon nitride films on Si(100) deposited by direct current saddle-field plasma-enhanced chemical vapor deposition

H. K. Jang; G. Kim; Y. S. Lee; S. W. Whangbo; C. N. Whang; Y-Z. Yoo; H. G. Kim

J. Vac. Sci. Technol. A 17, 2607–2611 (1999) https://doi.org/10.1116/1.581919

Abstract

View articletitled, Hydrogenated amorphous carbon nitride films on Si(100) deposited by direct current saddle-field plasma-enhanced chemical vapor deposition

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Silicon nitride films deposited at substrate temperatures <100 °C in a permanent magnet electron cyclotron resonance plasma

C. Doughty; D. C. Knick; J. B. Bailey; J. E. Spencer

J. Vac. Sci. Technol. A 17, 2612–2618 (1999) https://doi.org/10.1116/1.582103

Abstract

View articletitled, Silicon nitride films deposited at substrate temperatures <100 °C in a permanent magnet electron cyclotron resonance plasma

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Stoichiometry dependency of the firing and sustain voltage properties of MgO thin films for alternating current plasma display panels

Choongyong Son; Jinhui Cho; Jong-Wan Park

J. Vac. Sci. Technol. A 17, 2619–2622 (1999) https://doi.org/10.1116/1.581920

Abstract

View articletitled, Stoichiometry dependency of the firing and sustain voltage properties of MgO thin films for alternating current plasma display panels

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Development and characterization of surface chemistries for microfabricated biosensors

Steven W. Metzger; Mohan Natesan; Carolyn Yanavich; James Schneider; Gil U Lee

J. Vac. Sci. Technol. A 17, 2623–2628 (1999) https://doi.org/10.1116/1.581921

Abstract

View articletitled, Development and characterization of surface chemistries for microfabricated biosensors

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Oxynitridation of cubic silicon carbide (100) surfaces

F. Amy; L. Douillard; V. Yu. Aristov; P. Soukiassian

J. Vac. Sci. Technol. A 17, 2629–2633 (1999) https://doi.org/10.1116/1.581922

Abstract

View articletitled, Oxynitridation of cubic silicon carbide (100) surfaces

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Novel reflectron time of flight analyzer for surface analysis using secondary ion mass spectroscopy and mass spectroscopy of recoiled ions

V. S. Smentkowski; A. R. Krauss; D. M. Gruen; J. C. Holecek; J. A. Schultz

J. Vac. Sci. Technol. A 17, 2634–2641 (1999) https://doi.org/10.1116/1.581923

Abstract

View articletitled, Novel reflectron time of flight analyzer for surface analysis using secondary ion mass spectroscopy and mass spectroscopy of recoiled ions

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Thermal reaction of Pt film with 〈110〉 GaN epilayer

S. M. Gasser; E. Kolawa; M.-A. Nicolet

J. Vac. Sci. Technol. A 17, 2642–2646 (1999) https://doi.org/10.1116/1.581924

Abstract

View articletitled, Thermal reaction of Pt film with 〈110〉 GaN epilayer

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Density-functional cluster study of K adsorption on GaAs(110) surface

M. Panda; A. K. Ray

J. Vac. Sci. Technol. A 17, 2647–2654 (1999) https://doi.org/10.1116/1.581925

Abstract

View articletitled, Density-functional cluster study of K adsorption on GaAs(110) surface

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Composition and structure of HCl-isopropanol treated and vacuum annealed GaAs(100) surfaces

O. E. Tereshchenko; S. I. Chikichev; A. S. Terekhov

J. Vac. Sci. Technol. A 17, 2655–2662 (1999) https://doi.org/10.1116/1.581926

Abstract

View articletitled, Composition and structure of HCl-isopropanol treated and vacuum annealed GaAs(100) surfaces

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Analysis of P adsorption and desorption on the (001) InP surface using surface photoabsorption

Tae-Wan Lee; Heedon Hwang; Youngboo Moon; Euijoon Yoon; Young Dong Kim

J. Vac. Sci. Technol. A 17, 2663–2667 (1999) https://doi.org/10.1116/1.581927

Abstract

View articletitled, Analysis of P adsorption and desorption on the (001) InP surface using surface photoabsorption

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Cryogenic stabilization of high vapor pressure samples for surface analysis under ultrahigh vacuum conditions

J. J. Bruckner; K. Wozniak; S. Hardcastle; A. Sklyarov; S. Seal; T. L. Barr

J. Vac. Sci. Technol. A 17, 2668–2675 (1999) https://doi.org/10.1116/1.581928

Abstract

View articletitled, Cryogenic stabilization of high vapor pressure samples for surface analysis under ultrahigh vacuum conditions

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Atomic flux measurement by diode-laser-based atomic absorption spectroscopy

Weizhi Wang; R. H. Hammond; M. M. Fejer; M. R. Beasley

J. Vac. Sci. Technol. A 17, 2676–2684 (1999) https://doi.org/10.1116/1.581929

Abstract

View articletitled, Atomic flux measurement by diode-laser-based atomic absorption spectroscopy

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Interface morphology of CdS thin films grown on cadmium stannate and glass substrates studied by grazing incidence x-ray scattering

S. Huang; Y. L. Soo; M. Bechmann; Y. H. Kao; X. Wu; T. J. Coutts; R. Dhere; H. R. Moutinho

J. Vac. Sci. Technol. A 17, 2685–2691 (1999) https://doi.org/10.1116/1.581930

Abstract

View articletitled, Interface morphology of CdS thin films grown on cadmium stannate and glass substrates studied by grazing incidence x-ray scattering

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Low energy cathodoluminescence spectroscopy of etched 6H-SiC surfaces

A. P. Young; J. Jones; L. J. Brillson

J. Vac. Sci. Technol. A 17, 2692–2695 (1999) https://doi.org/10.1116/1.581931

Abstract

View articletitled, Low energy cathodoluminescence spectroscopy of etched 6H-SiC surfaces

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Sorption properties and temperature-dependent near-surface chemistry of the ${BaLi}_{4}$ intermetallic compound

R. M. Caloi; P. Manini; S. Vandré; E. Magnano; J. Kovac; E. Narducci; M. Sancrotti

J. Vac. Sci. Technol. A 17, 2696–2702 (1999) https://doi.org/10.1116/1.581932

Abstract

View articletitled, Sorption properties and temperature-dependent near-surface chemistry of the <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">BaLi</mi><mrow><mi mathvariant="normal">4</mi></mrow></msub></math> intermetallic compound

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Spatially resolved fluorine actinometry

Steven Shannon; James Paul Holloway; M. L. Brake

J. Vac. Sci. Technol. A 17, 2703–2708 (1999) https://doi.org/10.1116/1.581933

Abstract

View articletitled, Spatially resolved fluorine actinometry

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Computer study of boron segregation at the Si(100)– $2×1$ and Si(111)– $\sqrt{3} \times \sqrt{3}$ surfaces

V. G. Zavodinsky; I. A. Kuyanov; E. N. Chukurov

J. Vac. Sci. Technol. A 17, 2709–2712 (1999) https://doi.org/10.1116/1.581934

Abstract

View articletitled, Computer study of boron segregation at the Si(100)–<math xmlns="http://www.w3.org/1998/Math/MathML"><mtext xmlns="">2×1</mtext></math> and Si(111)–<math xmlns="http://www.w3.org/1998/Math/MathML"><msqrt xmlns=""><mrow><mn>3</mn></mrow></msqrt><mi xmlns="">×</mi><msqrt xmlns=""><mrow><mn>3</mn></mrow></msqrt></math> surfaces

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Carbon impurity characterization on a linear plasma device using visible emission spectroscopy

D. G. Whyte; R. P. Seraydarian; R. P. Doerner

J. Vac. Sci. Technol. A 17, 2713–2718 (1999) https://doi.org/10.1116/1.581935

Abstract

View articletitled, Carbon impurity characterization on a linear plasma device using visible emission spectroscopy

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Oxygen-induced changes in electron-energy-loss spectra for Al, Be and Ni

H. H. Madden; R. Landers; G. G. Kleiman; D. M. Zehner

J. Vac. Sci. Technol. A 17, 2719–2730 (1999) https://doi.org/10.1116/1.581936

Abstract

View articletitled, Oxygen-induced changes in electron-energy-loss spectra for Al, Be and Ni

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Investigation of slider surfaces after wear using photoemission electron microscopy

Simone Anders; Thomas Stammler; Walton Fong; David B. Bogy; C. Singh Bhatia; Joachim Stöhr

J. Vac. Sci. Technol. A 17, 2731–2736 (1999) https://doi.org/10.1116/1.581937

Abstract

View articletitled, Investigation of slider surfaces after wear using photoemission electron microscopy

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Enhanced secondary electron yield from oxidized regions on amorphous carbon films studied by x-ray spectromicroscopy

Javier Díaz; Simone Anders; Aline Cossy-Favre; Mahesh Samant; Joachim Stöhr

J. Vac. Sci. Technol. A 17, 2737–2740 (1999) https://doi.org/10.1116/1.581938

Abstract

View articletitled, Enhanced secondary electron yield from oxidized regions on amorphous carbon films studied by x-ray spectromicroscopy

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Thickness determination of metal thin films with spectroscopic ellipsometry for x-ray mirror and multilayer applications

Chian Liu; J. Erdmann; J. Maj; A. Macrander

J. Vac. Sci. Technol. A 17, 2741–2748 (1999) https://doi.org/10.1116/1.581939

Abstract

View articletitled, Thickness determination of metal thin films with spectroscopic ellipsometry for x-ray mirror and multilayer applications

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Preferred orientation in carbon and boron nitride: Does a thermodynamic theory of elastic strain energy get it right?

K. F. McCarty

J. Vac. Sci. Technol. A 17, 2749–2752 (1999) https://doi.org/10.1116/1.581940

Abstract

View articletitled, Preferred orientation in carbon and boron nitride: Does a thermodynamic theory of elastic strain energy get it right?

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Effects of moisture on Fowler–Nordheim characterization of thin silicon-oxide films

Charles A. Peterson; Richard K. Workman; Dror Sarid; Bert Vermeire; Harold G. Parks; Dennis Adderton; Peter Maivald

J. Vac. Sci. Technol. A 17, 2753–2758 (1999) https://doi.org/10.1116/1.581941

Abstract

View articletitled, Effects of moisture on Fowler–Nordheim characterization of thin silicon-oxide films

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Molecular dynamics simulations of ${Cl}_{2}^{+}$ impacts onto a chlorinated silicon surface: Energies and angles of the reflected ${Cl}_{2}$ and Cl fragments

B. A. Helmer; D. B. Graves

J. Vac. Sci. Technol. A 17, 2759–2770 (1999) https://doi.org/10.1116/1.581942

Abstract

View articletitled, Molecular dynamics simulations of <math xmlns="http://www.w3.org/1998/Math/MathML"><msubsup xmlns=""><mi mathvariant="normal">Cl</mi><mrow><mi mathvariant="normal">2</mi></mrow><mrow><mi mathvariant="normal">+</mi></mrow></msubsup></math> impacts onto a chlorinated silicon surface: Energies and angles of the reflected <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Cl</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math> and Cl fragments

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X-ray photoelectron spectroscopy study of bombardment-induced compositional changes in ${ZrO}_{2}$ ⁠, ${SiO}_{2}$ ⁠, and ${ZrSiO}_{4}$

Fabio Iacona; Roger Kelly; Giovanni Marletta

J. Vac. Sci. Technol. A 17, 2771–2778 (1999) https://doi.org/10.1116/1.581943

Abstract

View articletitled, X-ray photoelectron spectroscopy study of bombardment-induced compositional changes in <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">ZrO</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math>⁠, <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SiO</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math>⁠, and <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">ZrSiO</mi><mrow><mi mathvariant="normal">4</mi></mrow></msub></math>

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Electronic structure, depth profile, and complex impedance spectroscopy of Pd doped ZnO ultrafine particle films

Zhao Dachun; Qu Zhongkai; Pan Xiaoren

J. Vac. Sci. Technol. A 17, 2779–2784 (1999) https://doi.org/10.1116/1.581944

Abstract

View articletitled, Electronic structure, depth profile, and complex impedance spectroscopy of Pd doped ZnO ultrafine particle films

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Temperature programmed desorption from graphite

D. Schleussner; D. Rösler; J. Becker; W. Knapp; Ch. Edelmann; C. Garcı́a-Rosales; P. Franzen; R. Behrisch

J. Vac. Sci. Technol. A 17, 2785–2790 (1999) https://doi.org/10.1116/1.581945

Abstract

View articletitled, Temperature programmed desorption from graphite

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High resolution x-ray photoelectron spectroscopy and INDO/S–CI study of the core electron shakeup states of pyromellitic dianhydride-4,4^′-oxydianiline polyimide

Y. Nakayama; P. Persson; S. Lunell; S. P. Kowalczyk; B. Wannberg; U. Gelius

J. Vac. Sci. Technol. A 17, 2791–2799 (1999) https://doi.org/10.1116/1.581946

Abstract

View articletitled, High resolution x-ray photoelectron spectroscopy and INDO/S–CI study of the core electron shakeup states of pyromellitic dianhydride-4,4′-oxydianiline polyimide

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Nickel-induced effect on the surface morphology of rapid-quenched Si(111)

T. Fukuda

J. Vac. Sci. Technol. A 17, 2800–2804 (1999) https://doi.org/10.1116/1.582020

Abstract

View articletitled, Nickel-induced effect on the surface morphology of rapid-quenched Si(111)

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Negative ion resputtering in ${Ta}_{2} {Zn}_{3} O_{8}$ thin films

Philip D. Rack; Michael D. Potter; Andrew Woodard; Santosh Kurinec

J. Vac. Sci. Technol. A 17, 2805–2810 (1999) https://doi.org/10.1116/1.581947

Abstract

View articletitled, Negative ion resputtering in <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Ta</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Zn</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mi mathvariant="normal">8</mi></mrow></msub></math> thin films

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Effects of thermal annealing on the microstructure and mechanical properties of carbon–nitrogen films deposited by radio frequency-magnetron sputtering

M. M. Lacerda; F. L. Freire, Jr.; R. Prioli; C. M. Lepinski; G. Mariotto

J. Vac. Sci. Technol. A 17, 2811–2818 (1999) https://doi.org/10.1116/1.582021

Abstract

View articletitled, Effects of thermal annealing on the microstructure and mechanical properties of carbon–nitrogen films deposited by radio frequency-magnetron sputtering

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Molecular dynamics simulation of Cu and Ar ion sputtering of Cu (111) surfaces

J. D. Kress; D. E. Hanson; A. F. Voter; C. L. Liu; X.-Y. Liu; D. G. Coronell

J. Vac. Sci. Technol. A 17, 2819–2825 (1999) https://doi.org/10.1116/1.581948

Abstract

View articletitled, Molecular dynamics simulation of Cu and Ar ion sputtering of Cu (111) surfaces

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High-rate deposition of biaxially textured yttria-stabilized zirconia by dual magnetron oblique sputtering

D. Y. Kaufman; P. M. DeLuca; T. Tsai; S. A. Barnett

J. Vac. Sci. Technol. A 17, 2826–2829 (1999) https://doi.org/10.1116/1.581949

Abstract

View articletitled, High-rate deposition of biaxially textured yttria-stabilized zirconia by dual magnetron oblique sputtering

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Deposition of copper by using self-sputtering

Jianming Fu; Peijun Ding; Fernand Dorleans; Zheng Xu; Fusen Chen

J. Vac. Sci. Technol. A 17, 2830–2834 (1999) https://doi.org/10.1116/1.581950

Abstract

View articletitled, Deposition of copper by using self-sputtering

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Particle growth in a sputtering discharge

D. Samsonov; J. Goree

J. Vac. Sci. Technol. A 17, 2835–2840 (1999) https://doi.org/10.1116/1.581951

Abstract

View articletitled, Particle growth in a sputtering discharge

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Influence of the plasma pressure on the microstructure and on the optical and mechanical properties of amorphous carbon films deposited by direct current magnetron sputtering

L. G. Jacobsohn; F. L. Freire, Jr.

J. Vac. Sci. Technol. A 17, 2841–2849 (1999) https://doi.org/10.1116/1.582022

Abstract

View articletitled, Influence of the plasma pressure on the microstructure and on the optical and mechanical properties of amorphous carbon films deposited by direct current magnetron sputtering

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Establishing the relationship between process, structure, and properties of TiN films deposited by electron cyclotron resonance assisted reactive sputtering. I. Variations in hardness and roughness as a function of process parameters

Carl Carney; Delcie Durham

J. Vac. Sci. Technol. A 17, 2850–2858 (1999) https://doi.org/10.1116/1.581952

Abstract

View articletitled, Establishing the relationship between process, structure, and properties of TiN films deposited by electron cyclotron resonance assisted reactive sputtering. I. Variations in hardness and roughness as a function of process parameters

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Establishing the relationship between process, structure, and properties on titanium nitride films deposited by electron cyclotron resonance assisted reactive sputtering. II. A process model

Carl Carney; Delcie Durham

J. Vac. Sci. Technol. A 17, 2859–2868 (1999) https://doi.org/10.1116/1.582025

Abstract

View articletitled, Establishing the relationship between process, structure, and properties on titanium nitride films deposited by electron cyclotron resonance assisted reactive sputtering. II. A process model

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Instabilities of the reactive sputtering process involving one metallic target and two reactive gases

Nicolas Martin; Christophe Rousselot

J. Vac. Sci. Technol. A 17, 2869–2878 (1999) https://doi.org/10.1116/1.581953

Abstract

View articletitled, Instabilities of the reactive sputtering process involving one metallic target and two reactive gases

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Influence of the sputtering variables in the ion bombardment during off-axis deposition of ${YBa}_{2} {Cu}_{3} O_{x}$ films

M. Acosta; O. Ares; Victor Sosa; C. Acosta; J. L. Peña

J. Vac. Sci. Technol. A 17, 2879–2884 (1999) https://doi.org/10.1116/1.581954

Abstract

View articletitled, Influence of the sputtering variables in the ion bombardment during off-axis deposition of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">YBa</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Cu</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mi>x</mi></mrow></msub></math> films

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High performance Al–N cermet solar coatings deposited by a cylindrical direct current magnetron sputter coater

Qi-Chu Zhang; K. Zhao; B.-C. Zhang; L.-F. Wang; Z.-L. Shen; D.-Q. Lu; D.-L. Xie; B.-F. Li

J. Vac. Sci. Technol. A 17, 2885–2890 (1999) https://doi.org/10.1116/1.581955

Abstract

View articletitled, High performance Al–N cermet solar coatings deposited by a cylindrical direct current magnetron sputter coater

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Microstructure modification of silver films deposited by ionized magnetron sputter deposition

K.-F. Chiu; M. G. Blamire; Z. H. Barber

J. Vac. Sci. Technol. A 17, 2891–2895 (1999) https://doi.org/10.1116/1.581956

Abstract

View articletitled, Microstructure modification of silver films deposited by ionized magnetron sputter deposition

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Energy transfer into the growing film during sputter deposition: An investigation by calorimetric measurements and Monte Carlo simulations

Tilo P. Drüsedau; Torsten Bock; Thomas-Maik John; Frank Klabunde; Wolfgang Eckstein

J. Vac. Sci. Technol. A 17, 2896–2905 (1999) https://doi.org/10.1116/1.581957

Abstract

View articletitled, Energy transfer into the growing film during sputter deposition: An investigation by calorimetric measurements and Monte Carlo simulations

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Optical constants of crystalline ${WO}_{3}$ deposited by magnetron sputtering

Michael J. DeVries; Chris Trimble; Thomas E. Tiwald; Daniel W. Thompson; John A. Woollam; Jeffrey S. Hale

J. Vac. Sci. Technol. A 17, 2906–2910 (1999) https://doi.org/10.1116/1.581958

Abstract

View articletitled, Optical constants of crystalline <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">WO</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub></math> deposited by magnetron sputtering

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Growth of Mg films on H-terminated Si (111)

Koichiro Saiki; Kouichi Nishita; Yasuo Ariga; Atsushi Koma

J. Vac. Sci. Technol. A 17, 2911–2914 (1999) https://doi.org/10.1116/1.581959

Abstract

View articletitled, Growth of Mg films on H-terminated Si (111)

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Synthesis of hard TiN coatings with suppressed columnar growth and reduced stress

M. M. Lacerda; Y. H. Chen; B. Zhou; M. U. Guruz; Y. W. Chung

J. Vac. Sci. Technol. A 17, 2915–2919 (1999) https://doi.org/10.1116/1.581960

Abstract

View articletitled, Synthesis of hard TiN coatings with suppressed columnar growth and reduced stress

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Interdiffusion studies of single crystal TiN/NbN superlattice thin films

C. Engström; J. Birch; L. Hultman; C. Lavoie; C. Cabral; J. L. Jordan-Sweet; J. R. A. Carlsson

J. Vac. Sci. Technol. A 17, 2920–2927 (1999) https://doi.org/10.1116/1.581961

Abstract

View articletitled, Interdiffusion studies of single crystal TiN/NbN superlattice thin films

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Vacuum deposited biaxial thin films with all principal axes inclined to the substrate

Ian Hodgkinson; Qi Hong Wu

J. Vac. Sci. Technol. A 17, 2928–2932 (1999) https://doi.org/10.1116/1.581962

Abstract

View articletitled, Vacuum deposited biaxial thin films with all principal axes inclined to the substrate

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Visible and infrared photochromic properties of amorphous ${WO}_{3−x}$ films

Yeon-Gon Mo; R. O. Dillon; P. G. Snyder

J. Vac. Sci. Technol. A 17, 2933–2938 (1999) https://doi.org/10.1116/1.581963

Abstract

View articletitled, Visible and infrared photochromic properties of amorphous <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">WO</mi><mrow><mtext>3−x</mtext></mrow></msub></math> films

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Ferroelectric properties of ${Pb(Zr, Ti)O}_{3}$ thin films deposited on annealed ${IrO}_{2}$ and Ir bottom electrodes

Hee-Soo Lee; Woo-Sik Um; Kwang-Taek Hwang; Hyun-Gyoo Shin; Young-Bae Kim; Keun-Ho Auh

J. Vac. Sci. Technol. A 17, 2939–2943 (1999) https://doi.org/10.1116/1.581964

Abstract

View articletitled, Ferroelectric properties of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Pb(Zr, Ti)O</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub></math> thin films deposited on annealed <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">IrO</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math> and Ir bottom electrodes

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Dual ion beam deposited boron-rich boron nitride films

K. F. Chan; C. W. Ong; C. L. Choy; R. W. M. Kwok

J. Vac. Sci. Technol. A 17, 2944–2949 (1999) https://doi.org/10.1116/1.581965

Abstract

View articletitled, Dual ion beam deposited boron-rich boron nitride films

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Processing and characterization of nanometer sized copper sulfide particles

S. Seal; L. Bracho; S. Shukla; J. Morgiel

J. Vac. Sci. Technol. A 17, 2950–2956 (1999) https://doi.org/10.1116/1.581966

Abstract

View articletitled, Processing and characterization of nanometer sized copper sulfide particles

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Ex situ growth of the c-axis preferred oriented ${SrBi}_{2} {Ta}_{2} O_{9}$ thin films on ${Pt/Ti/SiO}_{2} /Si$ substrates

Choelhwyi Bae; Jeon-Kook Lee; Si-Hyung Lee; Hyung-Jin Jung

J. Vac. Sci. Technol. A 17, 2957–2961 (1999) https://doi.org/10.1116/1.581967

Abstract

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Study of interdiffusion between thin Y–Ba–Cu–O films and MgO substrates by applying Rutherford backscattering spectrometry combined with scanning tunneling microscopy

Y. Fujino; Y. Igarashi; S. Yamaura; N. Suzuki; K. Iimura

J. Vac. Sci. Technol. A 17, 2962–2968 (1999) https://doi.org/10.1116/1.582112

Abstract

View articletitled, Study of interdiffusion between thin Y–Ba–Cu–O films and MgO substrates by applying Rutherford backscattering spectrometry combined with scanning tunneling microscopy

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Integration of fluorinated amorphous carbon as low-dielectric constant insulator: Effects of heating and deposition of tantalum nitride

J. P. Chang; H. W. Krautter; W. Zhu; R. L. Opila; C. S. Pai

J. Vac. Sci. Technol. A 17, 2969–2974 (1999) https://doi.org/10.1116/1.581968

Abstract

View articletitled, Integration of fluorinated amorphous carbon as low-dielectric constant insulator: Effects of heating and deposition of tantalum nitride

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Precise, scalable shadow mask patterning of vacuum-deposited organic light emitting devices

P. F. Tian; V. Bulovic; P. E. Burrows; G. Gu; S. R. Forrest; T. X. Zhou

J. Vac. Sci. Technol. A 17, 2975–2981 (1999) https://doi.org/10.1116/1.581969

Abstract

View articletitled, Precise, scalable shadow mask patterning of vacuum-deposited organic light emitting devices

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Butanethiol on Au{100}-(5×20) using a simple retractable doser

St. J. Dixon-Warren; V. Bondzie; N. Burson; L. Lucchesi; Y. Yu; L. Zhang

J. Vac. Sci. Technol. A 17, 2982–2986 (1999) https://doi.org/10.1116/1.581970

Abstract

View articletitled, Butanethiol on Au{100}-(5×20) using a simple retractable doser

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Bi/Sb superlattices grown by molecular beam epitaxy

Sunglae Cho; Yunki Kim; Antonio DiVenere; George K. Wong; John B. Ketterson; Jung-Il Hong

J. Vac. Sci. Technol. A 17, 2987–2990 (1999) https://doi.org/10.1116/1.581971

Abstract

View articletitled, Bi/Sb superlattices grown by molecular beam epitaxy

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Surface morphology of homoepitaxially grown (111), (001), and (110) diamond studied by low energy electron diffraction and reflection high-energy electron diffraction

Mikka Nishitani-Gamo; Kian Ping Loh; Isao Sakaguchi; Tomohide Takami; Isao Kusunoki; Toshihiro Ando

J. Vac. Sci. Technol. A 17, 2991–3002 (1999) https://doi.org/10.1116/1.581972

Abstract

View articletitled, Surface morphology of homoepitaxially grown (111), (001), and (110) diamond studied by low energy electron diffraction and reflection high-energy electron diffraction

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Effects of grid bias on $ZnO /α- {Al}_{2} O_{3} (0001)$ heteroepitaxy

S. J. Doh; S. I. Park; T. S. Cho; Jung Ho Je

J. Vac. Sci. Technol. A 17, 3003–3007 (1999) https://doi.org/10.1116/1.581973

Abstract

View articletitled, Effects of grid bias on <math xmlns="http://www.w3.org/1998/Math/MathML"><mi mathvariant="normal" xmlns="">ZnO</mi><mi xmlns="">/α-</mi><msub xmlns=""><mi mathvariant="normal">Al</mi><mrow><mn>2</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mn>3</mn></mrow></msub><mtext xmlns="">(0001)</mtext></math> heteroepitaxy

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Self-limiting growth conditions on (001) InP by alternate triethylindium and tertiarybutylphosphine supply in ultrahigh vacuum

Nobuyuki Otsuka; Jun-ichi Nishizawa; Hideyuki Kikuchi; Yutaka Oyama

J. Vac. Sci. Technol. A 17, 3008–3018 (1999) https://doi.org/10.1116/1.581974

Abstract

View articletitled, Self-limiting growth conditions on (001) InP by alternate triethylindium and tertiarybutylphosphine supply in ultrahigh vacuum

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Growth kinetics of GaN and effects of flux ratio on the properties of GaN films grown by plasma-assisted molecular beam epitaxy

J. M. Myoung; O. Gluschenkov; K. Kim; S. Kim

J. Vac. Sci. Technol. A 17, 3019–3028 (1999) https://doi.org/10.1116/1.581975

Abstract

View articletitled, Growth kinetics of GaN and effects of flux ratio on the properties of GaN films grown by plasma-assisted molecular beam epitaxy

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Residual stress in GaN films grown by metalorganic chemical vapor deposition

Ying Chen; Daniel A. Gulino; Ryan Higgins

J. Vac. Sci. Technol. A 17, 3029–3032 (1999) https://doi.org/10.1116/1.581976

Abstract

View articletitled, Residual stress in GaN films grown by metalorganic chemical vapor deposition

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Metalorganic chemical vapor deposition of barium strontium titanate thin films with a more coordinatively saturated Ti precursor, ${Ti(dmae)}_{4} (dmae=dimethylaminoethoxide)$

Jung-Hyun Lee; Joo-Young Kim; Jae-Young Shim; Shi-Woo Rhee

J. Vac. Sci. Technol. A 17, 3033–3037 (1999) https://doi.org/10.1116/1.582001

Abstract

View articletitled, Metalorganic chemical vapor deposition of barium strontium titanate thin films with a more coordinatively saturated Ti precursor, <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Ti(dmae)</mi><mrow><mi mathvariant="normal">4</mi></mrow></msub><mi mathvariant="normal" xmlns="">(dmae=dimethylaminoethoxide)</mi></math>

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Improved GaN growth using a quasihot wall metal-organic chemical vapor epitaxy reactor

S. R. Chung; J. C. Chen; T. L. Worchesky

J. Vac. Sci. Technol. A 17, 3038–3044 (1999) https://doi.org/10.1116/1.582002

Abstract

View articletitled, Improved GaN growth using a quasihot wall metal-organic chemical vapor epitaxy reactor

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Giant enhancement of magneto-optical response and increase in perpendicular magnetic anisotropy of ultrathin Co/Pt(111) films upon thermal annealing

M.-T. Lin; C. C. Kuo; H. Y. Her; Y. E. Wu; J. S. Tsay; C. S. Shern

J. Vac. Sci. Technol. A 17, 3045–3050 (1999) https://doi.org/10.1116/1.582003

Abstract

View articletitled, Giant enhancement of magneto-optical response and increase in perpendicular magnetic anisotropy of ultrathin Co/Pt(111) films upon thermal annealing

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Parametrization of Laframboise’s results for spherical and cylindrical Langmuir probes

A. Karamcheti; Ch. Steinbrüchel

J. Vac. Sci. Technol. A 17, 3051–3056 (1999) https://doi.org/10.1116/1.582004

Abstract

View articletitled, Parametrization of Laframboise’s results for spherical and cylindrical Langmuir probes

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Versatile and economical specimen heater for ultrahigh vacuum applications

K. W. Bryant; M. J. Bozack

J. Vac. Sci. Technol. A 17, 3057–3061 (1999) https://doi.org/10.1116/1.582005

Abstract

View articletitled, Versatile and economical specimen heater for ultrahigh vacuum applications

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Rarefied gas flow through a long rectangular channel

Felix Sharipov

J. Vac. Sci. Technol. A 17, 3062–3066 (1999) https://doi.org/10.1116/1.582006

Abstract

View articletitled, Rarefied gas flow through a long rectangular channel

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Influence of an electrical field on the macroparticle size distribution in a vacuum arc

M. Keidar; R. Aharonov; I. I. Beilis

J. Vac. Sci. Technol. A 17, 3067–3073 (1999) https://doi.org/10.1116/1.582007

Abstract

View articletitled, Influence of an electrical field on the macroparticle size distribution in a vacuum arc

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Mechanism of enhanced plasma transport of vacuum arc plasma through curved magnetic ducts

T. Zhang; Z. M. Zeng; X. B. Tian; B. Y. Tang; P. K. Chu; I. G. Brown; H. X. Zhang

J. Vac. Sci. Technol. A 17, 3074–3076 (1999) https://doi.org/10.1116/1.582008

Abstract

View articletitled, Mechanism of enhanced plasma transport of vacuum arc plasma through curved magnetic ducts

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Graphite macroparticle filtering efficiency of three different magnetic filter designs used in the filtered cathodic vacuum arc deposition of tetrahedral amorphous carbon films

M. Hakovirta; K. C. Walter; B. P. Wood; M. Nastasi

J. Vac. Sci. Technol. A 17, 3077–3080 (1999) https://doi.org/10.1116/1.582009

Abstract

View articletitled, Graphite macroparticle filtering efficiency of three different magnetic filter designs used in the filtered cathodic vacuum arc deposition of tetrahedral amorphous carbon films

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Recommended practices for measuring the performance and characteristics of closed-loop gaseous helium cryopumps

Kimo M. Welch; Bruce Andeen; Johan E. de Rijke; Christopher A. Foster; Marsbed H. Hablanian; Ralph C. Longsworth; William E. Millikin, Jr.; Y. Tito Sasaki; Constantinos Tzemos

J. Vac. Sci. Technol. A 17, 3081–3095 (1999) https://doi.org/10.1116/1.582023

Abstract

View articletitled, Recommended practices for measuring the performance and characteristics of closed-loop gaseous helium cryopumps

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Power dissipation in turbomolecular pumps at high pressure

R. Cerruti; M. Spagnol; J. C. Helmer

J. Vac. Sci. Technol. A 17, 3096–3102 (1999) https://doi.org/10.1116/1.582010

Abstract

View articletitled, Power dissipation in turbomolecular pumps at high pressure

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Entrapment pump: Noble gas pump for use in combination with a getter pump

Fumio Watanabe; Akinari Kasai

J. Vac. Sci. Technol. A 17, 3103–3107 (1999) https://doi.org/10.1116/1.582011

Abstract

View articletitled, Entrapment pump: Noble gas pump for use in combination with a getter pump

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BRIEF REPORTS AND COMMENTS

Electric degradation behavior of hot filament in diamond chemical vapor deposition

Guangchao Chen; Rongfang Huang; Lishi Wen

J. Vac. Sci. Technol. A 17, 3108–3110 (1999) https://doi.org/10.1116/1.582029

View articletitled, Electric degradation behavior of hot filament in diamond chemical vapor deposition

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RAPID COMMUNICATIONS

Epitaxial growth of ${Zn}_{2} Y$ ferrite films by pulsed laser deposition

H. Kim; J. S. Horwitz; A. Piqué; H. S. Newman; P. Lubitz; M. M. Miller; D. L. Knies; D. B. Chrisey

J. Vac. Sci. Technol. A 17, 3111–3114 (1999) https://doi.org/10.1116/1.582012

Abstract

View articletitled, Epitaxial growth of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Zn</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><mi mathvariant="normal" xmlns="">Y</mi></math> ferrite films by pulsed laser deposition

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Chemical vapor deposition of barium strontium titanate films using a single mixture of metalorganic precursors

Jung-Hyun Lee; Man-Young Park; Shi-Woo Rhee

J. Vac. Sci. Technol. A 17, 3115–3117 (1999) https://doi.org/10.1116/1.582024

Abstract

View articletitled, Chemical vapor deposition of barium strontium titanate films using a single mixture of metalorganic precursors

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SHOP NOTES

Measuring the magnetic field distribution of a magnetron sputtering target

Edval J. P. Santos

J. Vac. Sci. Technol. A 17, 3118–3120 (1999) https://doi.org/10.1116/1.582013

Abstract

View articletitled, Measuring the magnetic field distribution of a magnetron sputtering target

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Video-game controller joystick

Richard L. Kurtz; Krishnan Subramanian; Gary J. Mankey

J. Vac. Sci. Technol. A 17, 3121–3122 (1999) https://doi.org/10.1116/1.582014

Abstract

View articletitled, Video-game controller joystick

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PAPERS FROM THE AVS - ULTRA CLEAN SOCIETY SESSION

Influence of wafer’s back-surface finish on dry-etching characteristics

S. Muramatsu; K. Ando; H. Nanbu; H. Miyamoto; T. Kitano

J. Vac. Sci. Technol. A 17, 3125–3128 (1999) https://doi.org/10.1116/1.582015

Abstract

View articletitled, Influence of wafer’s back-surface finish on dry-etching characteristics

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Silicon nitride film growth for advanced gate dielectric at low temperature employing high-density and low-energy ion bombardment

Katsuyuki Sekine; Yuji Saito; Masaki Hirayama; Tadahiro Ohmi

J. Vac. Sci. Technol. A 17, 3129–3133 (1999) https://doi.org/10.1116/1.582016

Abstract

View articletitled, Silicon nitride film growth for advanced gate dielectric at low temperature employing high-density and low-energy ion bombardment

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Low-temperature large-grain poly-Si direct deposition by microwave plasma enhanced chemical vapor deposition using ${SiH}_{4} /Xe$

Wataru Shindo; Shigefumi Sakai; Hiroaki Tanaka; Chuan Jie Zhong; Tadahiro Ohmi

J. Vac. Sci. Technol. A 17, 3134–3138 (1999) https://doi.org/10.1116/1.582017

Abstract

View articletitled, Low-temperature large-grain poly-Si direct deposition by microwave plasma enhanced chemical vapor deposition using <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SiH</mi><mrow><mi mathvariant="normal">4</mi></mrow></msub><mi mathvariant="normal" xmlns="">/Xe</mi></math>

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Clean aluminum oxide formation on surface of aluminum cylinder in an ultraclean gas-sampling system

Yoshio Ishihara; Noriko Itou; Tetsuya Kimijima; Takashi Hirano

J. Vac. Sci. Technol. A 17, 3139–3143 (1999) https://doi.org/10.1116/1.582018

Abstract

View articletitled, Clean aluminum oxide formation on surface of aluminum cylinder in an ultraclean gas-sampling system

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Gradational lead screw vacuum pump development

Kiyoshi Ando; Isao Akutsu; Tadahiro Ohmi

J. Vac. Sci. Technol. A 17, 3144–3148 (1999) https://doi.org/10.1116/1.582019

Abstract

View articletitled, Gradational lead screw vacuum pump development

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