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PAPERS FROM THE 45TH NATIONAL SYMPOSIUM OF THE AMERICAN VACUUM SOCIETY

APPLIED SURFACE SCIENCE

X-ray photoelectron spectroscopy investigations of the chemistries of soils

T. L. Barr; E. E. Hoppe; S. Hardcastle; S. Seal

J. Vac. Sci. Technol. A 17, 1079–1085 (1999) https://doi.org/10.1116/1.581778

Abstract

View articletitled, X-ray photoelectron spectroscopy investigations of the chemistries of soils

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Characterization of silicon oxynitride thin films by x-ray photoelectron spectroscopy

J. R. Shallenberger; D. A. Cole; S. W. Novak

J. Vac. Sci. Technol. A 17, 1086–1090 (1999) https://doi.org/10.1116/1.582038

Abstract

View articletitled, Characterization of silicon oxynitride thin films by x-ray photoelectron spectroscopy

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Valence band x-ray photoelectron spectroscopic studies to distinguish between oxidized aluminum species

John A. Rotole; Peter M. A. Sherwood

J. Vac. Sci. Technol. A 17, 1091–1096 (1999) https://doi.org/10.1116/1.581779

Abstract

View articletitled, Valence band x-ray photoelectron spectroscopic studies to distinguish between oxidized aluminum species

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Interface matching in oxides of rocksalt/rocksalt(001) and rocksalt/perovskite(001)

G. Chern; C. Cheng

J. Vac. Sci. Technol. A 17, 1097–1102 (1999) https://doi.org/10.1116/1.581780

Abstract

View articletitled, Interface matching in oxides of rocksalt/rocksalt(001) and rocksalt/perovskite(001)

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Optical and structural characterization of copper-based colloidal particles in ${SiO}_{2}$ coatings

A. Mendoza-Galván; J. F. Pérez-Robles; F. J. Espinoza-Beltrán; R. Ramı́rez-Bon; Y. V. Vorobiev; J. González-Hernández; G. Martı́nez

J. Vac. Sci. Technol. A 17, 1103–1108 (1999) https://doi.org/10.1116/1.581781

Abstract

View articletitled, Optical and structural characterization of copper-based colloidal particles in <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SiO</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math> coatings

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Role of surface chemistry on the nature of passive oxide film growth on Fe–Cr (low and high) steels at high temperatures

S. Seal; R. Nardelli; A. Kale; V. Desai; E. Armacanqui

J. Vac. Sci. Technol. A 17, 1109–1115 (1999) https://doi.org/10.1116/1.581782

Abstract

View articletitled, Role of surface chemistry on the nature of passive oxide film growth on Fe–Cr (low and high) steels at high temperatures

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Improvements to the analysis of x-ray photoelectron spectra using a maximum entropy method for deconvolution

N. S. McIntyre; T. Do; H. Piao; S. J. Splinter

J. Vac. Sci. Technol. A 17, 1116–1121 (1999) https://doi.org/10.1116/1.581783

Abstract

View articletitled, Improvements to the analysis of x-ray photoelectron spectra using a maximum entropy method for deconvolution

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Consistency of calculated and measured electron inelastic mean free paths

C. J. Powell; A. Jablonski

J. Vac. Sci. Technol. A 17, 1122–1126 (1999) https://doi.org/10.1116/1.581784

Abstract

View articletitled, Consistency of calculated and measured electron inelastic mean free paths

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Quantitative high-resolution imaging with sputter-initiated resonance ionization spectroscopy

K. F. Willey; H. F. Arlinghaus; T. J. Whitaker

J. Vac. Sci. Technol. A 17, 1127–1129 (1999) https://doi.org/10.1116/1.581908

Abstract

View articletitled, Quantitative high-resolution imaging with sputter-initiated resonance ionization spectroscopy

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Secondary ion mass spectrometry of deep trench capacitors in dynamic random access memory

C. C. Parks; H. Glawischnig; M. Levy; R. Stengl; Chr. Dieseldorff

J. Vac. Sci. Technol. A 17, 1130–1134 (1999) https://doi.org/10.1116/1.581785

Abstract

View articletitled, Secondary ion mass spectrometry of deep trench capacitors in dynamic random access memory

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Nitrogen incorporation and trace element analysis of nanocrystalline diamond thin films by secondary ion mass spectrometry

D. Zhou; F. A. Stevie; L. Chow; J. McKinley; H. Gnaser; V. H. Desai

J. Vac. Sci. Technol. A 17, 1135–1140 (1999) https://doi.org/10.1116/1.581786

Abstract

View articletitled, Nitrogen incorporation and trace element analysis of nanocrystalline diamond thin films by secondary ion mass spectrometry

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BIOMATERIAL INTERFACES

Atomic force microscopy observation of human lymphoid cells chronically infected with the human immunodeficiency virus

A. Cricenti; R. Generosi; M. Girasole; M. A. Scarselli; P. Perfetti; S. Bach; V. Colizzi

J. Vac. Sci. Technol. A 17, 1141–1144 (1999) https://doi.org/10.1116/1.581787

Abstract

View articletitled, Atomic force microscopy observation of human lymphoid cells chronically infected with the human immunodeficiency virus

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ELECTRONIC MATERIALS AND PROCESSING

Fundamental issues in wafer bonding

U. Gösele; Y. Bluhm; G. Kästner; P. Kopperschmidt; G. Kräuter; R. Scholz; A. Schumacher; St. Senz; Q.-Y. Tong; L.-J. Huang; Y.-L. Chao; T. H. Lee

J. Vac. Sci. Technol. A 17, 1145–1152 (1999) https://doi.org/10.1116/1.581788

Abstract

View articletitled, Fundamental issues in wafer bonding

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Reduced carbon contaminant, low-temperature silicon substrate preparation for “defect-free” homoepitaxy

Patrick J. Taylor; W. A. Jesser; M. Martinka; K. M. Singley; J. H. Dinan; R. T. Lareau; M. C. Wood; W. W. Clark, III

J. Vac. Sci. Technol. A 17, 1153–1159 (1999) https://doi.org/10.1116/1.581789

Abstract

View articletitled, Reduced carbon contaminant, low-temperature silicon substrate preparation for “defect-free” homoepitaxy

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Process optimization of dielectrics chemical mechanical planarization processes for ultralarge scale integration multilevel metallization

H. Treichel; R. Frausto; S. Srivatsan; B. Whithers; T. Meyer; R. Morishige

J. Vac. Sci. Technol. A 17, 1160–1167 (1999) https://doi.org/10.1116/1.581909

Abstract

View articletitled, Process optimization of dielectrics chemical mechanical planarization processes for ultralarge scale integration multilevel metallization

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Studies on passivation behavior of tungsten in application to chemical mechanical polishing

D. Tamboli; S. Seal; V. Desai; A. Maury

J. Vac. Sci. Technol. A 17, 1168–1173 (1999) https://doi.org/10.1116/1.581790

Abstract

View articletitled, Studies on passivation behavior of tungsten in application to chemical mechanical polishing

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Low damage dry etching of III–V materials for heterojunction bipolar transistor applications using a chlorinated inductively coupled plasma

J. Etrillard; J. F. Bresse; C. Daguet; M. Riet; J. Mba

J. Vac. Sci. Technol. A 17, 1174–1181 (1999) https://doi.org/10.1116/1.581791

Abstract

View articletitled, Low damage dry etching of III–V materials for heterojunction bipolar transistor applications using a chlorinated inductively coupled plasma

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Comparison of morphology and interfacial composition of Pd ultrathin films on 6H–SiC and 4H–SiC at different annealing temperatures

W. J. Lu; D. T. Shi; A. Burger; W. E. Collins

J. Vac. Sci. Technol. A 17, 1182–1190 (1999) https://doi.org/10.1116/1.581792

Abstract

View articletitled, Comparison of morphology and interfacial composition of Pd ultrathin films on 6H–SiC and 4H–SiC at different annealing temperatures

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Field emission from as-grown and surface modified BN and CN thin films

N. Badi; A. Tempez; D. Starikov; A. Bensaoula; V. P. Ageev; A. Karabutov; M. V. Ugarov; V. Frolov; E. Loubnin; K. Waters; A. Shultz

J. Vac. Sci. Technol. A 17, 1191–1195 (1999) https://doi.org/10.1116/1.581793

Abstract

View articletitled, Field emission from as-grown and surface modified BN and CN thin films

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Synthesis and current–voltage characterization of tin dioxide varistors

A. S. Kale; S. Seal; S. K. Date; P. N. Santhosh; R. N. Barve

J. Vac. Sci. Technol. A 17, 1196–1200 (1999) https://doi.org/10.1116/1.581794

Abstract

View articletitled, Synthesis and current–voltage characterization of tin dioxide varistors

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Side-wall damage in a transmission electron microscopy specimen of crystalline Si prepared by focused ion beam etching

N. I. Kato; Y. Kohno; H. Saka

J. Vac. Sci. Technol. A 17, 1201–1204 (1999) https://doi.org/10.1116/1.581795

Abstract

View articletitled, Side-wall damage in a transmission electron microscopy specimen of crystalline Si prepared by focused ion beam etching

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Heat transfer in ultrahigh vacuum scanning thermal microscopy

W. Müller-Hirsch; A. Kraft; M. T. Hirsch; J. Parisi; A. Kittel

J. Vac. Sci. Technol. A 17, 1205–1210 (1999) https://doi.org/10.1116/1.581796

Abstract

View articletitled, Heat transfer in ultrahigh vacuum scanning thermal microscopy

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Effects of variously configured magnets on the characteristics of inductively coupled plasmas

S. W. Hwang; Y. J. Lee; H. R. Han; J. B. Yoo; G. Y. Yeom

J. Vac. Sci. Technol. A 17, 1211–1216 (1999) https://doi.org/10.1116/1.581797

Abstract

View articletitled, Effects of variously configured magnets on the characteristics of inductively coupled plasmas

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Enhanced electrical performance of Au/n-GaN Schottky diodes by novel processing

L. He; X. J. Wang; R. Zhang

J. Vac. Sci. Technol. A 17, 1217–1220 (1999) https://doi.org/10.1116/1.581798

Abstract

View articletitled, Enhanced electrical performance of Au/n-GaN Schottky diodes by novel processing

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W and ${WSi}_{x}$ Ohmic contacts on p- and n-type GaN

X. A. Cao; F. Ren; S. J. Pearton; A. Zeitouny; M. Eizenberg; J. C. Zolper; C. R. Abernathy; J. Han; R. J. Shul; J. R. Lothian

J. Vac. Sci. Technol. A 17, 1221–1225 (1999) https://doi.org/10.1116/1.581799

Abstract

View articletitled, W and <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">WSi</mi><mrow><mi>x</mi></mrow></msub></math> Ohmic contacts on p- and n-type GaN

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Redistribution and activation of implanted S, Se, Te, Be, Mg, and C in GaN

R. G. Wilson; J. M. Zavada; X. A. Cao; R. K. Singh; S. J. Pearton; H. J. Guo; S. J. Pennycook; M. Fu; J. A. Sekhar; V. Scarvepalli; R. J. Shu; J. Han; D. J. Rieger; J. C. Zolper; C. R. Abernathy

J. Vac. Sci. Technol. A 17, 1226–1229 (1999) https://doi.org/10.1116/1.581800

Abstract

View articletitled, Redistribution and activation of implanted S, Se, Te, Be, Mg, and C in GaN

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Facet formation of a GaN-based device using chemically assisted ion beam etching with a photoresist mask

W. J. Lee; H. S. Kim; G. Y. Yeom; J. W. Lee; T. I. Kim

J. Vac. Sci. Technol. A 17, 1230–1234 (1999) https://doi.org/10.1116/1.581801

Abstract

View articletitled, Facet formation of a GaN-based device using chemically assisted ion beam etching with a photoresist mask

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Metal–insulator–semiconductor Schottky barrier structures fabricated using interfacial BN layers grown on GaN and SiC for optoelectronic device applications

D. Starikov; N. Badi; I. Berishev; N. Medelci; O. Kameli; M. Sayhi; V. Zomorrodian; A. Bensaoula

J. Vac. Sci. Technol. A 17, 1235–1238 (1999) https://doi.org/10.1116/1.581802

Abstract

View articletitled, Metal–insulator–semiconductor Schottky barrier structures fabricated using interfacial BN layers grown on GaN and SiC for optoelectronic device applications

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Carbon incorporation in SiGeC alloys grown by ultrahigh vacuum chemical vapor deposition

A. C. Mocuta; D. W. Greve

J. Vac. Sci. Technol. A 17, 1239–1243 (1999) https://doi.org/10.1116/1.581803

Abstract

View articletitled, Carbon incorporation in SiGeC alloys grown by ultrahigh vacuum chemical vapor deposition

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X-ray photoelectron spectroscopy and time-of-flight secondary ion mass spectrometry study of the role of Ti and TiN caps on the ${cobalt/SiO}_{2}$ interface

T. Conard; E. Kondoh; H. De Witte; K. Maex; W. Vandervorst

J. Vac. Sci. Technol. A 17, 1244–1249 (1999) https://doi.org/10.1116/1.581804

Abstract

View articletitled, X-ray photoelectron spectroscopy and time-of-flight secondary ion mass spectrometry study of the role of Ti and TiN caps on the <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">cobalt/SiO</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math> interface

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Structure of ultrathin ${SiO}_{2} /Si (111)$ interfaces studied by photoelectron spectroscopy

J. W. Keister; J. E. Rowe; J. J. Kolodziej; H. Niimi; H.-S. Tao; T. E. Madey; G. Lucovsky

J. Vac. Sci. Technol. A 17, 1250–1257 (1999) https://doi.org/10.1116/1.581805

Abstract

View articletitled, Structure of ultrathin <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SiO</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><mi mathvariant="normal" xmlns="">/Si</mi><mtext xmlns="">(111)</mtext></math> interfaces studied by photoelectron spectroscopy

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Cathodoluminescence spectroscopy of nitrided ${SiO}_{2} - Si$ interfaces

A. P. Young; R. Bandhu; J. Schäfer; H. Niimi; G. Lucovsky

J. Vac. Sci. Technol. A 17, 1258–1262 (1999) https://doi.org/10.1116/1.581806

Abstract

View articletitled, Cathodoluminescence spectroscopy of nitrided <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SiO</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><mi xmlns="">–</mi><mi mathvariant="normal" xmlns="">Si</mi></math> interfaces

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Effect of substrate temperature in ${SiO}_{x} N_{y}$ films deposited by electron cyclotron resonance

A. del Prado; F. L. Martı́nez; I. Mártil; G. González-Dı́az; M. Fernández

J. Vac. Sci. Technol. A 17, 1263–1268 (1999) https://doi.org/10.1116/1.582039

Abstract

View articletitled, Effect of substrate temperature in <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SiO</mi><mrow><mi>x</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">N</mi><mrow><mi>y</mi></mrow></msub></math> films deposited by electron cyclotron resonance

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Roughness at ${Si/SiO}_{2}$ interfaces and silicon oxidation

Xidong Chen; J. M. Gibson

J. Vac. Sci. Technol. A 17, 1269–1274 (1999) https://doi.org/10.1116/1.581807

Abstract

View articletitled, Roughness at <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Si/SiO</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math> interfaces and silicon oxidation

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Ultrathin silicon oxide film on Si(100) fabricated by highly concentrated ozone at atmospheric pressure

K. Nakamura; S. Ichimura; A. Kurokawa; K. Koike; G. Inoue; T. Fukuda

J. Vac. Sci. Technol. A 17, 1275–1279 (1999) https://doi.org/10.1116/1.581808

Abstract

View articletitled, Ultrathin silicon oxide film on Si(100) fabricated by highly concentrated ozone at atmospheric pressure

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Thermal stability of $a- {SiN}_{x} : H$ films deposited by plasma electron cyclotron resonance

F. L. Martı́nez; A. del Prado; D. Bravo; F. López; I. Mártil; G. González-Dı́az

J. Vac. Sci. Technol. A 17, 1280–1284 (1999) https://doi.org/10.1116/1.582110

Abstract

View articletitled, Thermal stability of <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">a-</mi><msub xmlns=""><mi mathvariant="normal">SiN</mi><mrow><mi>x</mi></mrow></msub><mi xmlns="">:</mi><mi mathvariant="normal" xmlns="">H</mi></math> films deposited by plasma electron cyclotron resonance

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Two-dimensional carrier profiling of InP-based structures using scanning spreading resistance microscopy

P. De Wolf; M. Geva; C. L. Reynolds; T. Hantschel; W. Vandervorst; R. B. Bylsma

J. Vac. Sci. Technol. A 17, 1285–1288 (1999) https://doi.org/10.1116/1.581809

Abstract

View articletitled, Two-dimensional carrier profiling of InP-based structures using scanning spreading resistance microscopy

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Temperature dependence of molecular beam epitaxy of GaN on SiC (0001)

V. Ramachandran; A. R. Smith; R. M. Feenstra; D. W. Greve

J. Vac. Sci. Technol. A 17, 1289–1293 (1999) https://doi.org/10.1116/1.581810

Abstract

View articletitled, Temperature dependence of molecular beam epitaxy of GaN on SiC (0001)

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Silicon nitride islands as oxidation masks for the formation of silicon nanopillars

Jeong Sook Ha; Kang-Ho Park; Wan Soo Yun; El-Hang Lee

J. Vac. Sci. Technol. A 17, 1294–1299 (1999) https://doi.org/10.1116/1.582100

Abstract

View articletitled, Silicon nitride islands as oxidation masks for the formation of silicon nanopillars

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Real-time optical control of ${Ga}_{1−x} {In}_{x} P$ film growth by p-polarized reflectance

N. Dietz; V. Woods; K. Ito; I. Lauko

J. Vac. Sci. Technol. A 17, 1300–1306 (1999) https://doi.org/10.1116/1.581811

Abstract

View articletitled, Real-time optical control of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Ga</mi><mrow><mtext>1−x</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">In</mi><mrow><mi>x</mi></mrow></msub><mi mathvariant="normal" xmlns="">P</mi></math> film growth by p-polarized reflectance

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In situ formation, reactions, and electrical characterization of molecular beam epitaxy-grown metal/semiconductor interfaces

L. C. Chen; D. A. Caldwell; T. G. Finstad; C. J. Palmstro/m

J. Vac. Sci. Technol. A 17, 1307–1312 (1999) https://doi.org/10.1116/1.581910

Abstract

View articletitled, In situ formation, reactions, and electrical characterization of molecular beam epitaxy-grown metal/semiconductor interfaces

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MAGNETIC INTERFACES AND NANOSTRUCTURES

Investigation of resonant photoemission in Gd with x-ray linear dichroism

S. R. Mishra; T. R. Cummins; G. D. Waddill; W. J. Gammon; G. van der Laan; K. W. Goodman; J. G. Tobin

J. Vac. Sci. Technol. A 17, 1313–1318 (1999) https://doi.org/10.1116/1.581812

Abstract

View articletitled, Investigation of resonant photoemission in Gd with x-ray linear dichroism

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Unoccupied band structure of strained gadolinium

Takashi Komesu; C. Waldfried; P. A. Dowben

J. Vac. Sci. Technol. A 17, 1319–1321 (1999) https://doi.org/10.1116/1.581813

Abstract

View articletitled, Unoccupied band structure of strained gadolinium

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Fermi surface study of pseudomorphic ${Fe}_{1−x} {Ni}_{x}$ and ${Co}_{1−x} {Ni}_{x}$ thin films on Cu(100)

M. Hochstrasser; F. O. Schumann; R. F. Willis; T. Cummins; G. D. Waddill; S. R. Mishra; J. G. Tobin; E. Rotenberg

J. Vac. Sci. Technol. A 17, 1322–1325 (1999) https://doi.org/10.1116/1.581814

Abstract

View articletitled, Fermi surface study of pseudomorphic <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Fe</mi><mrow><mtext>1−x</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ni</mi><mrow><mi>x</mi></mrow></msub></math> and <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Co</mi><mrow><mtext>1−x</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ni</mi><mrow><mi>x</mi></mrow></msub></math> thin films on Cu(100)

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Comparison of ${Cl}_{2}$ and $F_{2}$ based chemistries for the inductively coupled plasma etching of NiMnSb thin films

J. Hong; J. A. Caballero; E. S. Lambers; J. R. Childress; S. J. Pearton

J. Vac. Sci. Technol. A 17, 1326–1330 (1999) https://doi.org/10.1116/1.581815

Abstract

View articletitled, Comparison of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Cl</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math> and <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">F</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math> based chemistries for the inductively coupled plasma etching of NiMnSb thin films

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Reversal behavior in a bimodal magneto-optical medium

R. A. Fry; L. H. Bennett; E. Della Torre

J. Vac. Sci. Technol. A 17, 1331–1334 (1999) https://doi.org/10.1116/1.581816

Abstract

View articletitled, Reversal behavior in a bimodal magneto-optical medium

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Magnetization dynamics: A study of the ferromagnet/antiferromagnet interface and exchange biasing

R. E. Camley; B. V. McGrath; R. J. Astalos; R. L. Stamps; Joo-Von Kim; Leonard Wee

J. Vac. Sci. Technol. A 17, 1335–1339 (1999) https://doi.org/10.1116/1.581817

Abstract

View articletitled, Magnetization dynamics: A study of the ferromagnet/antiferromagnet interface and exchange biasing

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MANUFACTURING SCIENCE AND TECHNOLOGY

Reaction/annealing pathways for forming ultrathin silicon nitride films for composite oxide–nitride gate dielectrics with nitrided crystalline silicon–dielectric interfaces for application in advanced complementary metal–oxide–semiconductor devices

G. Lucovsky

J. Vac. Sci. Technol. A 17, 1340–1351 (1999) https://doi.org/10.1116/1.581818

Abstract

View articletitled, Reaction/annealing pathways for forming ultrathin silicon nitride films for composite oxide–nitride gate dielectrics with nitrided crystalline silicon–dielectric interfaces for application in advanced complementary metal–oxide–semiconductor devices

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Design of a 300 mm chemical vapor deposition tungsten reactor using computational fluid dynamics

E. J. McInerney; T. M. Pratt; A. Taheri

J. Vac. Sci. Technol. A 17, 1352–1355 (1999) https://doi.org/10.1116/1.581819

Abstract

View articletitled, Design of a 300 mm chemical vapor deposition tungsten reactor using computational fluid dynamics

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Plasma-induced nitridation of gate oxide dielectrics: Linked equipment-feature atomic scale simulations

Valeriy Sukharev; Sheldon Aronowitz; Vladimir Zubkov; Helmut Puchner; John Haywood; Jim Kimball

J. Vac. Sci. Technol. A 17, 1356–1363 (1999) https://doi.org/10.1116/1.581820

Abstract

View articletitled, Plasma-induced nitridation of gate oxide dielectrics: Linked equipment-feature atomic scale simulations

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Complete solvent free stripping of via structures using ${NF}_{3} {/H}_{2} {O/O}_{2}$ ashing chemistry

Wing kei Au; Randy Solis; Richard Bersin; Han Xu; M. Boumerzoug

J. Vac. Sci. Technol. A 17, 1364–1368 (1999) https://doi.org/10.1116/1.581821

Abstract

View articletitled, Complete solvent free stripping of via structures using <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">NF</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">/H</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">O/O</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math> ashing chemistry

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Using historical wafermap data for automated yield analysis

Kenneth W. Tobin; Thomas P. Karnowski; Shaun S. Gleason; David Jensen; Fred Lakhani

J. Vac. Sci. Technol. A 17, 1369–1376 (1999) https://doi.org/10.1116/1.581822

Abstract

View articletitled, Using historical wafermap data for automated yield analysis

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Advances in broadband radio-frequency sensing for real-time control of plasma-based semiconductor processing

Craig Garvin; Dennis S. Grimard; J. W. Grizzle

J. Vac. Sci. Technol. A 17, 1377–1383 (1999) https://doi.org/10.1116/1.581823

Abstract

View articletitled, Advances in broadband radio-frequency sensing for real-time control of plasma-based semiconductor processing

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On-line patterned wafer thickness control of chemical-mechanical polishing

Taber H. Smith; Simon J. Fang; Jerry A. Stefani; Greg B. Shinn; Duane S. Boning; Stephanie W. Butler

J. Vac. Sci. Technol. A 17, 1384–1390 (1999) https://doi.org/10.1116/1.581824

Abstract

View articletitled, On-line patterned wafer thickness control of chemical-mechanical polishing

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Surface cleaning on aluminum for ultrahigh vacuum using supercritical fluid ${CO}_{2}$ with $H_{2} O$ and NaCl as additives

T. Momose; H. Yoshida; Z. Sherverni; T. Ebina; K. Tatenuma; Y. Ikushima

J. Vac. Sci. Technol. A 17, 1391–1393 (1999) https://doi.org/10.1116/1.581825

Abstract

View articletitled, Surface cleaning on aluminum for ultrahigh vacuum using supercritical fluid <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">CO</mi><mrow><mn>2</mn></mrow></msub></math> with <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">H</mi><mrow><mn>2</mn></mrow></msub><mi mathvariant="normal" xmlns="">O</mi></math> and NaCl as additives

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NANOMETER-SCALE SCIENCE AND TECHNOLOGY

Quantum-dot cellular automata

G. L. Snider; A. O. Orlov; I. Amlani; X. Zuo; G. H. Bernstein; C. S. Lent; J. L. Merz; W. Porod

J. Vac. Sci. Technol. A 17, 1394–1398 (1999) https://doi.org/10.1116/1.581826

Abstract

View articletitled, Quantum-dot cellular automata

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Proposal of atom/molecule switching devices

Yasuo Wada

J. Vac. Sci. Technol. A 17, 1399–1405 (1999) https://doi.org/10.1116/1.581827

Abstract

View articletitled, Proposal of atom/molecule switching devices

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Self-organized Ge quantum wires on Si(111) substrates

G. Jin; Y. S. Tang; J. L. Liu; K. L. Wang

J. Vac. Sci. Technol. A 17, 1406–1409 (1999) https://doi.org/10.1116/1.581828

Abstract

View articletitled, Self-organized Ge quantum wires on Si(111) substrates

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Formation and characterization of metal atom nanostructures on Si(112) facet surfaces

S. M. Prokes; O. J. Glembocki

J. Vac. Sci. Technol. A 17, 1410–1414 (1999) https://doi.org/10.1116/1.581829

Abstract

View articletitled, Formation and characterization of metal atom nanostructures on Si(112) facet surfaces

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Self-assembled ${CaF}_{2}$ nanostructures on silicon

D. Y. Petrovykh; J. Viernow; J.-L. Lin; F. M. Leibsle; F. K. Men; A. Kirakosian; F. J. Himpsel

J. Vac. Sci. Technol. A 17, 1415–1419 (1999) https://doi.org/10.1116/1.581916

Abstract

View articletitled, Self-assembled <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">CaF</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math> nanostructures on silicon

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Raman scattering and infrared absorption in multiple boron-doped Ge dots

J. L. Liu; W. G. Wu; Y. S. Tang; K. L. Wang; T. Radetic; R. Gronsky

J. Vac. Sci. Technol. A 17, 1420–1424 (1999) https://doi.org/10.1116/1.581830

Abstract

View articletitled, Raman scattering and infrared absorption in multiple boron-doped Ge dots

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Fabrication of nanometer size photoresist wire patterns with a silver nanocrystal shadowmask

S. H. Choi; K. L. Wang; M. S. Leung; G. W. Stupian; N. Presser; S. W. Chung; G. Markovich; S. H. Kim; J. R. Heath

J. Vac. Sci. Technol. A 17, 1425–1427 (1999) https://doi.org/10.1116/1.581831

Abstract

View articletitled, Fabrication of nanometer size photoresist wire patterns with a silver nanocrystal shadowmask

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Polycrystalline nanopore arrays with hexagonal ordering on aluminum

A. P. Li; F. Müller; A. Birner; K. Nielsch; U. Gösele

J. Vac. Sci. Technol. A 17, 1428–1431 (1999) https://doi.org/10.1116/1.581832

Abstract

View articletitled, Polycrystalline nanopore arrays with hexagonal ordering on aluminum

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Proximity x-ray lithography of siloxane and polymer films containing benzyl chloride functional groups

W. J. Dressick; C. S. Dulcey; S. L. Brandow; H. Witschi; P. F. Neeley

J. Vac. Sci. Technol. A 17, 1432–1440 (1999) https://doi.org/10.1116/1.581833

Abstract

View articletitled, Proximity x-ray lithography of siloxane and polymer films containing benzyl chloride functional groups

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Field-induced manipulation of Ag clusters for tailoring of nanostructures on a silicon surface

Kang-Ho Park; Jeong Sook Ha; Wan Soo Yun; El-Hang Lee

J. Vac. Sci. Technol. A 17, 1441–1444 (1999) https://doi.org/10.1116/1.581834

Abstract

View articletitled, Field-induced manipulation of Ag clusters for tailoring of nanostructures on a silicon surface

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Two mechanisms of scanning tunneling microscopy assisted nanostructure formation using precursor molecules

I. Lyubinetsky; S. Mezhenny; W. J. Choyke; J. T. Yates, Jr.

J. Vac. Sci. Technol. A 17, 1445–1450 (1999) https://doi.org/10.1116/1.581911

Abstract

View articletitled, Two mechanisms of scanning tunneling microscopy assisted nanostructure formation using precursor molecules

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Current-induced nanochemistry: Local oxidation of thin metal films

R. Martel; T. Schmidt; R. L. Sandstrom; Ph. Avouris

J. Vac. Sci. Technol. A 17, 1451–1456 (1999) https://doi.org/10.1116/1.581835

Abstract

View articletitled, Current-induced nanochemistry: Local oxidation of thin metal films

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Automated, high precision measurement of critical dimensions using the atomic force microscope

Donald A. Chernoff; David L. Burkhead

J. Vac. Sci. Technol. A 17, 1457–1462 (1999) https://doi.org/10.1116/1.581836

Abstract

View articletitled, Automated, high precision measurement of critical dimensions using the atomic force microscope

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Substrate effects on electronic properties of atomic chains

Toshishige Yamada

J. Vac. Sci. Technol. A 17, 1463–1468 (1999) https://doi.org/10.1116/1.581837

Abstract

View articletitled, Substrate effects on electronic properties of atomic chains

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PARTIAL PRESSURE MEASUREMENTS AND PROCESS CONTROL

Semiconductor and thin film applications of a quadrupole mass spectrometer

Robert K. Waits

J. Vac. Sci. Technol. A 17, 1469–1478 (1999) https://doi.org/10.1116/1.581838

Abstract

View articletitled, Semiconductor and thin film applications of a quadrupole mass spectrometer

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PLASMA SCIENCE AND TECHNOLOGY

Increase of etch resistance of deep ultraviolet photoresist by implantation

K. K. Ong; M. H. Liang; L. H. Chan; C. P. Soo

J. Vac. Sci. Technol. A 17, 1479–1482 (1999) https://doi.org/10.1116/1.581839

Abstract

View articletitled, Increase of etch resistance of deep ultraviolet photoresist by implantation

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Etch characteristics of optical waveguides using inductively coupled plasmas with multidipole magnets

K. J. An; D. H. Lee; J. B. Yoo; J. Lee; G. Y. Yeom

J. Vac. Sci. Technol. A 17, 1483–1487 (1999) https://doi.org/10.1116/1.581840

Abstract

View articletitled, Etch characteristics of optical waveguides using inductively coupled plasmas with multidipole magnets

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In situ cleaning of GaAs and ${Al}_{x} {Ga}_{1−x} As$ surfaces and production of ohmic contacts using an atomic hydrogen source based on a reflected arc discharge

V. A. Kagadei; D. I. Proskurovsky

J. Vac. Sci. Technol. A 17, 1488–1493 (1999) https://doi.org/10.1116/1.581841

Abstract

View articletitled, In situ cleaning of GaAs and <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Al</mi><mrow><mi>x</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ga</mi><mrow><mtext>1−x</mtext></mrow></msub><mi mathvariant="normal" xmlns="">As</mi></math> surfaces and production of ohmic contacts using an atomic hydrogen source based on a reflected arc discharge

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Gate oxide damage: Testing approaches and methodologies

Calvin T. Gabriel

J. Vac. Sci. Technol. A 17, 1494–1500 (1999) https://doi.org/10.1116/1.581842

Abstract

View articletitled, Gate oxide damage: Testing approaches and methodologies

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Evaluation of charging damage test structures for ion implantation processes

M. J. Goeckner; S. B. Felch; J. Weeman; S. Mehta; J. S. Reedholm

J. Vac. Sci. Technol. A 17, 1501–1509 (1999) https://doi.org/10.1116/1.581843

Abstract

View articletitled, Evaluation of charging damage test structures for ion implantation processes

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Reactive ion etching of Si by Cl and Cl₂ ions: Molecular dynamics simulations with comparisons to experiment

D. E. Hanson; J. D. Kress; A. F. Voter

J. Vac. Sci. Technol. A 17, 1510–1513 (1999) https://doi.org/10.1116/1.581844

Abstract

View articletitled, Reactive ion etching of Si by Cl and Cl2 ions: Molecular dynamics simulations with comparisons to experiment

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Characterization of 100 MHz inductively coupled plasma (ICP) by comparison with 13.56 MHz ICP

H. Nakagawa; S. Morishita; S. Noda; M. Okigawa; M. Inoue; M. Sekine; K. Ito

J. Vac. Sci. Technol. A 17, 1514–1519 (1999) https://doi.org/10.1116/1.581845

Abstract

View articletitled, Characterization of 100 MHz inductively coupled plasma (ICP) by comparison with 13.56 MHz ICP

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Volume/surface effects on electron energy and dissociation reactions in large-volume plasma reactors

Keizo Kinoshita; Shuichi Noda; Satoshi Morishita; Naoshi Itabashi; Mitsuru Okigawa; Makoto Sekine; Masami Inoue

J. Vac. Sci. Technol. A 17, 1520–1525 (1999) https://doi.org/10.1116/1.581846

Abstract

View articletitled, Volume/surface effects on electron energy and dissociation reactions in large-volume plasma reactors

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Improvement on lithography pattern profile by plasma treatment

C. P. Soo; A. J. Bourdillon; S. Valiyaveettil; A. Huan; A. Wee; M. H. Fan; T. C. Ang; L. H. Chan

J. Vac. Sci. Technol. A 17, 1526–1530 (1999) https://doi.org/10.1116/1.582101

Abstract

View articletitled, Improvement on lithography pattern profile by plasma treatment

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Formation of large positive silicon-cluster ions in a remote silane plasma

W. M. M. Kessels; C. M. Leewis; A. Leroux; M. C. M. van de Sanden; D. C. Schram

J. Vac. Sci. Technol. A 17, 1531–1535 (1999) https://doi.org/10.1116/1.581847

Abstract

View articletitled, Formation of large positive silicon-cluster ions in a remote silane plasma

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Challenges in plasma etching and patterning for fabrication of new systems and devices

M. Engelhardt; V. Weinrich; N. Nagel; W. Hartner

J. Vac. Sci. Technol. A 17, 1536–1538 (1999) https://doi.org/10.1116/1.581848

Abstract

View articletitled, Challenges in plasma etching and patterning for fabrication of new systems and devices

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Use of a one atmosphere uniform glow discharge plasma to kill a broad spectrum of microorganisms

K. Kelly-Wintenberg; Amanda Hodge; T. C. Montie; Liliana Deleanu; Daniel Sherman; J. Reece Roth; Peter Tsai; Larry Wadsworth

J. Vac. Sci. Technol. A 17, 1539–1544 (1999) https://doi.org/10.1116/1.581849

Abstract

View articletitled, Use of a one atmosphere uniform glow discharge plasma to kill a broad spectrum of microorganisms

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Ion and neutral species in $C_{2} F_{6}$ and ${CHF}_{3}$ dielectric etch discharges

RaviPrakash Jayaraman; Robert T. McGrath; G. A. Hebner

J. Vac. Sci. Technol. A 17, 1545–1551 (1999) https://doi.org/10.1116/1.581850

Abstract

View articletitled, Ion and neutral species in <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">C</mi><mrow><mn>2</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">F</mi><mrow><mn>6</mn></mrow></msub></math> and <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">CHF</mi><mrow><mn>3</mn></mrow></msub></math> dielectric etch discharges

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Studies of ion bombardment in high density plasmas containing ${CF}_{4}$

J. K. Olthoff; Yicheng Wang

J. Vac. Sci. Technol. A 17, 1552–1555 (1999) https://doi.org/10.1116/1.581851

Abstract

View articletitled, Studies of ion bombardment in high density plasmas containing <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">CF</mi><mrow><mn>4</mn></mrow></msub></math>

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Microloading effect in ultrafine ${SiO}_{2}$ hole/trench etching

Y. Feurprier; Y. Chinzei; M. Ogata; T. Kikuchi; M. Ozawa; T. Ichiki; Y. Horiike

J. Vac. Sci. Technol. A 17, 1556–1561 (1999) https://doi.org/10.1116/1.581852

Abstract

View articletitled, Microloading effect in ultrafine <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SiO</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math> hole/trench etching

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Etch rate control in a 27 MHz reactive ion etching system for ultralarge scale integrated circuit processing

T. Tatsumi; Y. Hikosaka; S. Morishita; M. Matsui; M. Sekine

J. Vac. Sci. Technol. A 17, 1562–1569 (1999) https://doi.org/10.1116/1.582102

Abstract

View articletitled, Etch rate control in a 27 MHz reactive ion etching system for ultralarge scale integrated circuit processing

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SELECTED ENERGY EPITAXY

Selected energy epitaxial deposition of GaN and AlN on SiC(0001) using seeded supersonic free jets of ${NH}_{3}$ in helium

V. M. Torres; R. B. Doak; B. J. Wilkens; D. J. Smith; I. S. T. Tsong

J. Vac. Sci. Technol. A 17, 1570–1576 (1999) https://doi.org/10.1116/1.582036

Abstract

View articletitled, Selected energy epitaxial deposition of GaN and AlN on SiC(0001) using seeded supersonic free jets of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">NH</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub></math> in helium

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SURFACE SCIENCE

Adsorption structures of NO/Pt(111) investigated by scanning tunneling microscopy

M. Matsumoto; N. Tatsumi; K. Fukutani; T. Okano; T. Yamada; K. Miyake; K. Hate; H. Shigekawa

J. Vac. Sci. Technol. A 17, 1577–1580 (1999) https://doi.org/10.1116/1.581853

Abstract

View articletitled, Adsorption structures of NO/Pt(111) investigated by scanning tunneling microscopy

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Nickelocene adsorption on single-crystal surfaces

D. L. Pugmire; C. M. Woodbridge; S. Root; M. A. Langell

J. Vac. Sci. Technol. A 17, 1581–1586 (1999) https://doi.org/10.1116/1.581854

Abstract

View articletitled, Nickelocene adsorption on single-crystal surfaces

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Atom probe analysis of the dissociation of CO and $N_{2}$ gases on a W(110)-oriented tip

Tetsuo Shimizu; Akihiko Ohi; Hiroshi Tokumoto

J. Vac. Sci. Technol. A 17, 1587–1591 (1999) https://doi.org/10.1116/1.581855

Abstract

View articletitled, Atom probe analysis of the dissociation of CO and <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">N</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math> gases on a W(110)-oriented tip

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Synthesis and decomposition of formate on Cu(111) and Cu(110) surfaces: Structure sensitivity

I. Nakamura; H. Nakano; T. Fujitani; T. Uchijima; J. Nakamura

J. Vac. Sci. Technol. A 17, 1592–1595 (1999) https://doi.org/10.1116/1.581856

Abstract

View articletitled, Synthesis and decomposition of formate on Cu(111) and Cu(110) surfaces: Structure sensitivity

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Intermediate structures appearing in the phase transition of $Si (111)-7×7$ to $(√3×√3)R30°$ induced by ${HBO}_{2}$ molecular irradiation

K. Miyake; T. Kaikoh; K. Hata; R. Morita; M. Yamashita; H. Shigekawa

J. Vac. Sci. Technol. A 17, 1596–1601 (1999) https://doi.org/10.1116/1.581857

Abstract

View articletitled, Intermediate structures appearing in the phase transition of <math xmlns="http://www.w3.org/1998/Math/MathML"><mi mathvariant="normal" xmlns="">Si</mi><mtext xmlns="">(111)-7×7</mtext></math> to <math xmlns="http://www.w3.org/1998/Math/MathML"><mtext xmlns="">(√3×√3)R30°</mtext></math> induced by <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">HBO</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math> molecular irradiation

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GaCl molecular beam cell for surface dynamics studies

Masafumi Ohashi; Masashi Ozeki

J. Vac. Sci. Technol. A 17, 1602–1605 (1999) https://doi.org/10.1116/1.581858

Abstract

View articletitled, GaCl molecular beam cell for surface dynamics studies

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Conversion efficiency of graphite atomic-scale defects to etched pits in thermal oxidation reaction

J. R. Hahn; H. Kang

J. Vac. Sci. Technol. A 17, 1606–1609 (1999) https://doi.org/10.1116/1.581859

Abstract

View articletitled, Conversion efficiency of graphite atomic-scale defects to etched pits in thermal oxidation reaction

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Control of atomic step arrangements on a patterned Si(111) substrate by using molecular beam epitaxy

H. Omi; T. Ogino

J. Vac. Sci. Technol. A 17, 1610–1614 (1999) https://doi.org/10.1116/1.581907

Abstract

View articletitled, Control of atomic step arrangements on a patterned Si(111) substrate by using molecular beam epitaxy

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Reconstructions of Ag on high-index silicon surfaces

S. R. Blankenship; H. H. Song; A. A. Baski; J. A. Carlisle

J. Vac. Sci. Technol. A 17, 1615–1620 (1999) https://doi.org/10.1116/1.581860

Abstract

View articletitled, Reconstructions of Ag on high-index silicon surfaces

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Photoelectron diffraction intensity calculation by using tensor low-energy electron diffraction theory

Shinji Omori; Yoshimasa Nihei

J. Vac. Sci. Technol. A 17, 1621–1625 (1999) https://doi.org/10.1116/1.581861

Abstract

View articletitled, Photoelectron diffraction intensity calculation by using tensor low-energy electron diffraction theory

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Disappearance of element-specific Kikuchi bands from fluoride surfaces

Shinji Omori; Yoshimasa Nihei

J. Vac. Sci. Technol. A 17, 1626–1629 (1999) https://doi.org/10.1116/1.581862

Abstract

View articletitled, Disappearance of element-specific Kikuchi bands from fluoride surfaces

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Structure and electronic states of single-crystal ${Fe}_{1−x} {Ni}_{x} O_{y}$ $(0⩽x⩽1)$ thin films

G. Chern; C. L. Chang; C. L. Chen; C. L. Dong

J. Vac. Sci. Technol. A 17, 1630–1634 (1999) https://doi.org/10.1116/1.581863

Abstract

View articletitled, Structure and electronic states of single-crystal <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Fe</mi><mrow><mtext>1−x</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ni</mi><mrow><mi>x</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mi>y</mi></mrow></msub></math> <math xmlns="http://www.w3.org/1998/Math/MathML"><mtext xmlns="">(0⩽x⩽1)</mtext></math> thin films

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Low-energy electron diffraction study of the multilayer relaxation of Cu(211)

Th. Seyller; R. D. Diehl; F. Jona

J. Vac. Sci. Technol. A 17, 1635–1638 (1999) https://doi.org/10.1116/1.581864

Abstract

View articletitled, Low-energy electron diffraction study of the multilayer relaxation of Cu(211)

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Scanning tunneling microscopy and spectroscopy of tungsten oxide thin films in air

S. Santucci; L. Lozzi; M. Passacantando; L. Odorisio; C. Cantalini

J. Vac. Sci. Technol. A 17, 1639–1646 (1999) https://doi.org/10.1116/1.581865

Abstract

View articletitled, Scanning tunneling microscopy and spectroscopy of tungsten oxide thin films in air

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Auger electron spectroscopy low energy electron diffraction study of the growth mode of Ag on Au(111), (311), and (554) single-crystal surfaces

V. Rooryck; C. Buess-Herman; G. A. Attard; F. Reniers

J. Vac. Sci. Technol. A 17, 1647–1651 (1999) https://doi.org/10.1116/1.581866

Abstract

View articletitled, Auger electron spectroscopy low energy electron diffraction study of the growth mode of Ag on Au(111), (311), and (554) single-crystal surfaces

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Analysis of high-index Si(001) surfaces by reflectance difference spectroscopy

L. Mantese; Q. K. Xue; T. Sakurai; D. E. Aspnes

J. Vac. Sci. Technol. A 17, 1652–1656 (1999) https://doi.org/10.1116/1.581867

Abstract

View articletitled, Analysis of high-index Si(001) surfaces by reflectance difference spectroscopy

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Mg clusters on MgO surfaces: Characterization with metastable impact electron spectroscopy, ultraviolet photoelectron spectroscopy (HeI), and temperature programmed desorption

J. Günster; J. Stultz; S. Krischok; D. W. Goodman; P. Stracke; V. Kempter

J. Vac. Sci. Technol. A 17, 1657–1662 (1999) https://doi.org/10.1116/1.581868

Abstract

View articletitled, Mg clusters on MgO surfaces: Characterization with metastable impact electron spectroscopy, ultraviolet photoelectron spectroscopy (HeI), and temperature programmed desorption

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Effect of tensile strain on $B$ -type step energy on $Si (001)-(2×1)$ surfaces determined by switch-kink counting

E. R. Heller; D. E. Jones; J. P. Pelz; Y. H. Xie; P. J. Silverman

J. Vac. Sci. Technol. A 17, 1663–1669 (1999) https://doi.org/10.1116/1.581869

Abstract

View articletitled, Effect of tensile strain on <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">B</mi></math>-type step energy on <math xmlns="http://www.w3.org/1998/Math/MathML"><mi mathvariant="normal" xmlns="">Si</mi><mtext xmlns="">(001)-(2×1)</mtext></math> surfaces determined by switch-kink counting

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Scanning tunneling microscope studies of boron-doped Si(001)

J.-F. Nielsen; H.-J Im; J. P. Pelz; M. Krueger; B. Borovsky; E. Ganz

J. Vac. Sci. Technol. A 17, 1670–1675 (1999) https://doi.org/10.1116/1.581870

Abstract

View articletitled, Scanning tunneling microscope studies of boron-doped Si(001)

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Thallium overlayers on Si(111): Structures of a “new” group III element

Lucia Vitali; Friedrich P. Leisenberger; Michael G. Ramsey; Falko P. Netzer

J. Vac. Sci. Technol. A 17, 1676–1682 (1999) https://doi.org/10.1116/1.581871

Abstract

View articletitled, Thallium overlayers on Si(111): Structures of a “new” group III element

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Ultrathin Cu films on Si(111): Schottky barrier formation and sensor applications

H. Nienhaus; H. S. Bergh; B. Gergen; A. Majumdar; W. H. Weinberg; E. W. McFarland

J. Vac. Sci. Technol. A 17, 1683–1687 (1999) https://doi.org/10.1116/1.581872

Abstract

View articletitled, Ultrathin Cu films on Si(111): Schottky barrier formation and sensor applications

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Reconstructed oxide structures stable in air: Silicate monolayers on hexagonal SiC surfaces

U. Starke; J. Schardt; J. Bernhardt; K. Heinz

J. Vac. Sci. Technol. A 17, 1688–1692 (1999) https://doi.org/10.1116/1.581873

Abstract

View articletitled, Reconstructed oxide structures stable in air: Silicate monolayers on hexagonal SiC surfaces

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Electromigration induced dynamics of surface dislocations and atomic steps

N. Shimoni; O. Biham; O. Millo

J. Vac. Sci. Technol. A 17, 1693–1695 (1999) https://doi.org/10.1116/1.581874

Abstract

View articletitled, Electromigration induced dynamics of surface dislocations and atomic steps

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Growth of Ag rows on Si(5 5 12)

H. H. Song; K. M. Jones; A. A. Baski

J. Vac. Sci. Technol. A 17, 1696–1699 (1999) https://doi.org/10.1116/1.581875

Abstract

View articletitled, Growth of Ag rows on Si(5 5 12)

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Enantiospecific adsorption of chiral hydrocarbons on naturally chiral Pt and Cu surfaces

Timothy D. Power; David S. Sholl

J. Vac. Sci. Technol. A 17, 1700–1704 (1999) https://doi.org/10.1116/1.581876

Abstract

View articletitled, Enantiospecific adsorption of chiral hydrocarbons on naturally chiral Pt and Cu surfaces

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Role of steps and kinks in catalytic activity

L. P. Ford; P. Blowers; R. I. Masel

J. Vac. Sci. Technol. A 17, 1705–1709 (1999) https://doi.org/10.1116/1.581877

Abstract

View articletitled, Role of steps and kinks in catalytic activity

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Theoretical studies of surface reactions on metals: I. Ethyl to ethylene conversion on platinum; II. Photodissociation of methane on platinum

J. L. Whitten

J. Vac. Sci. Technol. A 17, 1710–1716 (1999) https://doi.org/10.1116/1.581878

Abstract

View articletitled, Theoretical studies of surface reactions on metals: I. Ethyl to ethylene conversion on platinum; II. Photodissociation of methane on platinum

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Oxygen adsorption on well-defined gold particles on ${TiO}_{2} (110)$

V. A. Bondzie; S. C. Parker; C. T. Campbell

J. Vac. Sci. Technol. A 17, 1717–1720 (1999) https://doi.org/10.1116/1.581879

Abstract

View articletitled, Oxygen adsorption on well-defined gold particles on <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">TiO</mi><mrow><mn>2</mn></mrow></msub><mtext xmlns="">(110)</mtext></math>

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Monte Carlo simulations of the kinetics of catalytic reactions on nanometer-sized particles, with diffusion over facet boundaries

H. Persson; P. Thormählen; V. P. Zhdanov; B. Kasemo

J. Vac. Sci. Technol. A 17, 1721–1726 (1999) https://doi.org/10.1116/1.581880

Abstract

View articletitled, Monte Carlo simulations of the kinetics of catalytic reactions on nanometer-sized particles, with diffusion over facet boundaries

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Initial stages of Al(111) oxidation by oxygen: Temperature and surface morphology effects

V. Zhukov; I. Popova; J. T. Yates, Jr.

J. Vac. Sci. Technol. A 17, 1727–1732 (1999) https://doi.org/10.1116/1.581881

Abstract

View articletitled, Initial stages of Al(111) oxidation by oxygen: Temperature and surface morphology effects

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Synchrotron-radiation stimulated desorption of ${SiO}_{2}$ thin films on Si(111) surfaces observed by scanning tunneling microscopy

T. Miyamae; H. Uchida; I. H. Munro; T. Urisu

J. Vac. Sci. Technol. A 17, 1733–1736 (1999) https://doi.org/10.1116/1.581882

Abstract

View articletitled, Synchrotron-radiation stimulated desorption of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SiO</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math> thin films on Si(111) surfaces observed by scanning tunneling microscopy

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Effect of growth rate on the nucleation of $α- {Fe}_{2} O_{3}$ on $α- {Al}_{2} O_{3} (0001)$ by oxygen-plasma-assisted molecular beam epitaxy

S. I. Yi; Y. Liang; S. A. Chambers

J. Vac. Sci. Technol. A 17, 1737–1742 (1999) https://doi.org/10.1116/1.581883

Abstract

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Nature, growth, and stability of vanadium oxides on Pd(111)

F. P. Leisenberger; S. Surnev; L. Vitali; M. G. Ramsey; F. P. Netzer

J. Vac. Sci. Technol. A 17, 1743–1749 (1999) https://doi.org/10.1116/1.581884

Abstract

View articletitled, Nature, growth, and stability of vanadium oxides on Pd(111)

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Formation of hydronium and methoxonium on Pt(110): Ab initio determination of spectroscopically observed species

P. Blowers; N. Chen; R. I. Masel

J. Vac. Sci. Technol. A 17, 1750–1755 (1999) https://doi.org/10.1116/1.581885

Abstract

View articletitled, Formation of hydronium and methoxonium on Pt(110): Ab initio determination of spectroscopically observed species

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Dynamics of the striped nanostructure of the oxidized Cu(110) surface: A momentum-resolved electron stimulated desorption ion angular distribution study

D. Mocuta; J. Ahner; J.-G. Lee; S. Denev; J. T. Yates, Jr.

J. Vac. Sci. Technol. A 17, 1756–1760 (1999) https://doi.org/10.1116/1.581886

Abstract

View articletitled, Dynamics of the striped nanostructure of the oxidized Cu(110) surface: A momentum-resolved electron stimulated desorption ion angular distribution study

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THIN FILMS

Photoemission spectroscopy analysis of ZnO:Ga films for display applications

E. W. Forsythe; Yongli Gao; L. G. Provost; G. S. Tompa

J. Vac. Sci. Technol. A 17, 1761–1764 (1999) https://doi.org/10.1116/1.581887

Abstract

View articletitled, Photoemission spectroscopy analysis of ZnO:Ga films for display applications

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Transparent and conductive multicomponent oxide films prepared by magnetron sputtering

Tadatsugu Minami

J. Vac. Sci. Technol. A 17, 1765–1772 (1999) https://doi.org/10.1116/1.581888

Abstract

View articletitled, Transparent and conductive multicomponent oxide films prepared by magnetron sputtering

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Work function modification of indium–tin–oxide used in organic light emitting devices

S. M. Tadayyon; K. Griffiths; P. R. Norton; C. Tripp; Z. Popovic

J. Vac. Sci. Technol. A 17, 1773–1778 (1999) https://doi.org/10.1116/1.581889

Abstract

View articletitled, Work function modification of indium–tin–oxide used in organic light emitting devices

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Implications of contact mechanics models for mechanical properties measurements using scanning force microscopy

W. N. Unertl

J. Vac. Sci. Technol. A 17, 1779–1786 (1999) https://doi.org/10.1116/1.581890

Abstract

View articletitled, Implications of contact mechanics models for mechanical properties measurements using scanning force microscopy

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Nanotribology of single crystal ZnO surfaces: Restructuring at high temperature annealing

J. J. Nainaparampil; J. S. Zabinski; S. V. Prasad

J. Vac. Sci. Technol. A 17, 1787–1792 (1999) https://doi.org/10.1116/1.581891

Abstract

View articletitled, Nanotribology of single crystal ZnO surfaces: Restructuring at high temperature annealing

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Investigation of induced recrystallization and stress in close-spaced sublimated and radio-frequency magnetron sputtered CdTe thin films

H. R. Moutinho; R. G. Dhere; M. M. Al-Jassim; D. H. Levi; L. L. Kazmerski

J. Vac. Sci. Technol. A 17, 1793–1798 (1999) https://doi.org/10.1116/1.581892

Abstract

View articletitled, Investigation of induced recrystallization and stress in close-spaced sublimated and radio-frequency magnetron sputtered CdTe thin films

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Characterization of thin metal films processed at different temperatures

J. E. Siewenie; L. He

J. Vac. Sci. Technol. A 17, 1799–1804 (1999) https://doi.org/10.1116/1.581893

Abstract

View articletitled, Characterization of thin metal films processed at different temperatures

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Optical properties of Ge:Sb:Te ternary alloys

E. Garcı́a-Garcı́a; A. Mendoza-Galván; Y. Vorobiev; E. Morales-Sánchez; J. González-Hernández; G. Martı́nez; B. S. Chao

J. Vac. Sci. Technol. A 17, 1805–1810 (1999) https://doi.org/10.1116/1.581894

Abstract

View articletitled, Optical properties of Ge:Sb:Te ternary alloys

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Influence of annealing temperature on the formation and characteristics of sol-gel prepared ZnO films

R. Castanedo-Pérez; O. Jiménez-Sandoval; S. Jiménez-Sandoval; J. Márquez-Marı́n; A. Mendoza-Galván; G. Torres-Delgado; A. Maldonado-Alvarez

J. Vac. Sci. Technol. A 17, 1811–1816 (1999) https://doi.org/10.1116/1.581895

Abstract

View articletitled, Influence of annealing temperature on the formation and characteristics of sol-gel prepared ZnO films

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Growth and characterization of epitaxial films of tungsten-doped vanadium oxides on sapphire (110) by reactive magnetron sputtering

P. Jin; M. Tazawa; M. Ikeyama; S. Tanemura; K. Macák; X. Wang; S. Olafsson; U. Helmersson

J. Vac. Sci. Technol. A 17, 1817–1821 (1999) https://doi.org/10.1116/1.581896

Abstract

View articletitled, Growth and characterization of epitaxial films of tungsten-doped vanadium oxides on sapphire (110) by reactive magnetron sputtering

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Stability of transparent conducting oxide films for use at high temperatures

Tadatsugu Minami; Toshihiro Miyata; Takashi Yamamoto

J. Vac. Sci. Technol. A 17, 1822–1826 (1999) https://doi.org/10.1116/1.581897

Abstract

View articletitled, Stability of transparent conducting oxide films for use at high temperatures

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Target compound layer formation during reactive sputtering

L. B. Jonsson; T. Nyberg; S. Berg

J. Vac. Sci. Technol. A 17, 1827–1831 (1999) https://doi.org/10.1116/1.581898

Abstract

View articletitled, Target compound layer formation during reactive sputtering

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Porous polycrystalline silicon conductivity sensor

P. G. Han; H. Wong; M. C. Poon; N. Wang

J. Vac. Sci. Technol. A 17, 1832–1835 (1999) https://doi.org/10.1116/1.581899

Abstract

View articletitled, Porous polycrystalline silicon conductivity sensor

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Thickness and index measurement of transparent thin films using neural network processed reflectance data

Milad F. Tabet; William A. McGahan

J. Vac. Sci. Technol. A 17, 1836–1839 (1999) https://doi.org/10.1116/1.581900

Abstract

View articletitled, Thickness and index measurement of transparent thin films using neural network processed reflectance data

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Density measurement of thin glass layers for gas barrier films

Norihito Fukugami; Hideo Nishino; Masa-aki Yanaka; Kozue Tomiyama; Yusuke Tsukahara

J. Vac. Sci. Technol. A 17, 1840–1842 (1999) https://doi.org/10.1116/1.581901

Abstract

View articletitled, Density measurement of thin glass layers for gas barrier films

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Accurate and rapid determination of thickness, n and k spectra, and resistivity of indium–tin–oxide films

K. Zhang; A. R. Forouhi; I. Bloomer

J. Vac. Sci. Technol. A 17, 1843–1847 (1999) https://doi.org/10.1116/1.581902

Abstract

View articletitled, Accurate and rapid determination of thickness, n and k spectra, and resistivity of indium–tin–oxide films

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Dislocation network developed in titanium nitride by ion implantation

Anthony J. Perry; Yuri P. Sharkeev; Daniel E. Geist; Sergey V. Fortuna

J. Vac. Sci. Technol. A 17, 1848–1853 (1999) https://doi.org/10.1116/1.581903

Abstract

View articletitled, Dislocation network developed in titanium nitride by ion implantation

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Obtaining optical constants of thin ${Ge}_{x} {Sb}_{y} {Te}_{z}$ films from measurements of reflection and transmission

David V. Tsu

J. Vac. Sci. Technol. A 17, 1854–1860 (1999) https://doi.org/10.1116/1.581904

Abstract

View articletitled, Obtaining optical constants of thin <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Ge</mi><mrow><mi>x</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Sb</mi><mrow><mi>y</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Te</mi><mrow><mi>z</mi></mrow></msub></math> films from measurements of reflection and transmission

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Process monitoring of hemispherical-grained silicon thin films for dynamic random access memory applications

Clive Hayzelden; Albert Bivas; Carlos L. Ygartua; Kin-Chung Chan

J. Vac. Sci. Technol. A 17, 1861–1865 (1999) https://doi.org/10.1116/1.581905

Abstract

View articletitled, Process monitoring of hemispherical-grained silicon thin films for dynamic random access memory applications

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Thin-film gas sensors based on high-temperature-operated metal oxides

M. Fleischer; H. Meixner

J. Vac. Sci. Technol. A 17, 1866–1872 (1999) https://doi.org/10.1116/1.581906

Abstract

View articletitled, Thin-film gas sensors based on high-temperature-operated metal oxides

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Characterization of sol-gel prepared WO₃ thin films as a gas sensor

C. Cantalini; M. Z. Atashbar; Y. Li; M. K. Ghantasala; S. Santucci; W. Wlodarski; M. Passacantando

J. Vac. Sci. Technol. A 17, 1873–1879 (1999) https://doi.org/10.1116/1.581698

Abstract

View articletitled, Characterization of sol-gel prepared WO3 thin films as a gas sensor

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In situ study of interface reactions of ion beam sputter deposited $({Ba}_{0.5} {Sr}_{0.5} {)TiO}_{3}$ films on Si, ${SiO}_{2},$ and Ir

Y. Gao; A. H. Mueller; E. A. Irene; O. Auciello; A. Krauss; J. A. Schultz

J. Vac. Sci. Technol. A 17, 1880–1886 (1999) https://doi.org/10.1116/1.582099

Abstract

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Ordered binary oxide films of $V_{2} O_{3} (0001)$ on ${Al}_{2} O_{3}$

Q. Guo; D. Y. Kim; S. C. Street; D. W. Goodman

J. Vac. Sci. Technol. A 17, 1887–1892 (1999) https://doi.org/10.1116/1.581699

Abstract

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Ultralarge scale integrated metallization and interconnects

Christine Whitman; Mehrdad M. Moslehi; Ajit Paranjpe; Lino Velo; Tom Omstead

J. Vac. Sci. Technol. A 17, 1893–1897 (1999) https://doi.org/10.1116/1.581700

Abstract

View articletitled, Ultralarge scale integrated metallization and interconnects

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Effects of collimator aspect ratio and deposition temperature on copper sputtered seedlayers

E. C. Cooney, III; D. C. Strippe; J. W. Korejwa; A. H. Simon; C. Uzoh

J. Vac. Sci. Technol. A 17, 1898–1903 (1999) https://doi.org/10.1116/1.581701

Abstract

View articletitled, Effects of collimator aspect ratio and deposition temperature on copper sputtered seedlayers

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Cobalt sputtering target and sputter deposition of Co thin films for cobalt silicide metallization

Hao Zhang; John Poole; Rick Eller; Mark Keefe

J. Vac. Sci. Technol. A 17, 1904–1910 (1999) https://doi.org/10.1116/1.581702

Abstract

View articletitled, Cobalt sputtering target and sputter deposition of Co thin films for cobalt silicide metallization

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Improvement of morphological stability of Ag thin film on a TiN layer with a thin interposing metal layer

C. Y. Hong; Y. C. Peng; L. J. Chen; W. Y. Hsieh; Y. F. Hsieh

J. Vac. Sci. Technol. A 17, 1911–1915 (1999) https://doi.org/10.1116/1.581703

Abstract

View articletitled, Improvement of morphological stability of Ag thin film on a TiN layer with a thin interposing metal layer

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Preferential sputtering effects in thin film processing

S. Berg; I. V. Katardjiev

J. Vac. Sci. Technol. A 17, 1916–1925 (1999) https://doi.org/10.1116/1.581704

Abstract

View articletitled, Preferential sputtering effects in thin film processing

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Reactor-scale models for rf diode sputtering of metal thin films

S. Desa; S. Ghosal; R. L. Kosut; J. L. Ebert; T. E. Abrahamson; A. Kozak; D. W. Zou; X. Zhou; J. F. Groves; H. N. G. Wadley

J. Vac. Sci. Technol. A 17, 1926–1933 (1999) https://doi.org/10.1116/1.581705

Abstract

View articletitled, Reactor-scale models for rf diode sputtering of metal thin films

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Using pulsed direct current power for reactive sputtering of ${Al}_{2} O_{3}$

A. Belkind; A. Freilich; R. Scholl

J. Vac. Sci. Technol. A 17, 1934–1940 (1999) https://doi.org/10.1116/1.581706

Abstract

View articletitled, Using pulsed direct current power for reactive sputtering of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Al</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub></math>

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Novel approach to collimated physical vapor deposition

J. C. S. Kools; A. P. Paranjpe; D. H. Heimanson; P. V. Schwartz; K. Song; B. Bergner; S. McAllister; R. W. Van Ysseldyk

J. Vac. Sci. Technol. A 17, 1941–1945 (1999) https://doi.org/10.1116/1.581707

Abstract

View articletitled, Novel approach to collimated physical vapor deposition

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Polysilicon thin film transistors fabricated on low temperature plastic substrates

Paul G. Carey; Patrick M. Smith; Steven D. Theiss; Paul Wickboldt

J. Vac. Sci. Technol. A 17, 1946–1949 (1999) https://doi.org/10.1116/1.581708

Abstract

View articletitled, Polysilicon thin film transistors fabricated on low temperature plastic substrates

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Ex situ characterization of phase transformations and associated microstructures in polycrystalline thin films

K. Barmak; J. M. Rickman; C. Michaelsen; R. A. Ristau; J. Kim; G. A. Lucadamo; D. T. Carpenter; W. S. Tong

J. Vac. Sci. Technol. A 17, 1950–1957 (1999) https://doi.org/10.1116/1.581709

Abstract

View articletitled, Ex situ characterization of phase transformations and associated microstructures in polycrystalline thin films

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Structure and electronic properties of the novel semiconductor alloy ${Cd}_{1−x} {Cu}_{x} Te$

S. López-López; G. Torres-Delgado; S. Jiménez-Sandoval; O. Jiménez-Sandoval; R. Castanedo-Pérez; M. Meléndez-Lira

J. Vac. Sci. Technol. A 17, 1958–1962 (1999) https://doi.org/10.1116/1.581710

Abstract

View articletitled, Structure and electronic properties of the novel semiconductor alloy <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Cd</mi><mrow><mtext>1−x</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Cu</mi><mrow><mi>x</mi></mrow></msub><mi mathvariant="normal" xmlns="">Te</mi></math>

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Annealing of copper electrodeposits

C. H. Seah; S. Mridha; L. H. Chan

J. Vac. Sci. Technol. A 17, 1963–1967 (1999) https://doi.org/10.1116/1.581711

Abstract

View articletitled, Annealing of copper electrodeposits

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Polymerized C-Si films on metal substrates: Cu adhesion/diffusion barriers for ultralarge scale integration?

Li Chen; Jeffry A. Kelber

J. Vac. Sci. Technol. A 17, 1968–1973 (1999) https://doi.org/10.1116/1.581712

Abstract

View articletitled, Polymerized C-Si films on metal substrates: Cu adhesion/diffusion barriers for ultralarge scale integration?

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Ultrahigh rate, wide area, plasma polymerized films from high molecular weight/low vapor pressure liquid or solid monomer precursors

J. D. Affinito; M. E. Gross; P. A. Mounier; M.-K. Shi; G. L. Graff

J. Vac. Sci. Technol. A 17, 1974–1981 (1999) https://doi.org/10.1116/1.581713

Abstract

View articletitled, Ultrahigh rate, wide area, plasma polymerized films from high molecular weight/low vapor pressure liquid or solid monomer precursors

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Structural and electrical properties of ${SrTiO}_{3}$ thin films prepared by plasma enhanced metalorganic chemical vapor deposition

Y. B. Hahn; D. O. Kim

J. Vac. Sci. Technol. A 17, 1982–1986 (1999) https://doi.org/10.1116/1.581714

Abstract

View articletitled, Structural and electrical properties of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SrTiO</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub></math> thin films prepared by plasma enhanced metalorganic chemical vapor deposition

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Assessment of as-deposited microcrystalline silicon films on polymer substrates using electron cyclotron resonance-plasma enhanced chemical vapor deposition

Sanghoon Bae; Stephen J. Fonash

J. Vac. Sci. Technol. A 17, 1987–1990 (1999) https://doi.org/10.1116/1.581715

Abstract

View articletitled, Assessment of as-deposited microcrystalline silicon films on polymer substrates using electron cyclotron resonance-plasma enhanced chemical vapor deposition

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VACUUM METALLURGY

Unbalanced magnetron sputtered carbon composite coatings

X. T. Zeng

J. Vac. Sci. Technol. A 17, 1991–1995 (1999) https://doi.org/10.1116/1.581716

Abstract