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Breaking the ${Ga–CH}_{3}$ bond at cryogenic temperatures using atomic hydrogen. Adsorbed trimethylgallium reactivity

Douglas B. Mawhinney; John A. Glass, Jr.; John T. Yates, Jr.

J. Vac. Sci. Technol. A 17, 679–685 (1999) https://doi.org/10.1116/1.581686

Abstract

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Effects of Ar dilution on the optical emission spectra of fluorocarbon ultrahigh-frequency plasmas: $C_{4} F_{8}$ vs ${CF}_{4}$

Toshiki Nakano; Seiji Samukawa

J. Vac. Sci. Technol. A 17, 686–691 (1999) https://doi.org/10.1116/1.581687

Abstract

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Electron beam dissociation of CO and ${CO}_{2}$ on ZnS thin films

Y. Darici; P. H. Holloway; J. Sebastian; T. Trottier; S. Jones; J. Rodriquez

J. Vac. Sci. Technol. A 17, 692–697 (1999) https://doi.org/10.1116/1.581688

Abstract

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Evidence for germanium phosphide dots on Ge(001)

D. J. Bottomley; M. Iwami; Y. Uehara; S. Ushioda

J. Vac. Sci. Technol. A 17, 698–703 (1999) https://doi.org/10.1116/1.581689

Abstract

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Controller design issues in the feedback control of radio frequency plasma processing reactors

Shahid Rauf; Mark J. Kushner

J. Vac. Sci. Technol. A 17, 704–712 (1999) https://doi.org/10.1116/1.581690

Abstract

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Study of the dc saddle-field discharge: Application to methane

E. Sagnes; J. Szurmak; D. Manage; S. Zukotynski

J. Vac. Sci. Technol. A 17, 713–720 (1999) https://doi.org/10.1116/1.581694

Abstract

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Langmuir probe measurements in a low pressure inductively coupled plasma used for diamond deposition

Katsuyuki Okada; Shojiro Komatsu; Seiichiro Matsumoto

J. Vac. Sci. Technol. A 17, 721–725 (1999) https://doi.org/10.1116/1.581691

Abstract

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Plasma-enhanced metal organic chemical vapor deposition of high purity copper thin films using plasma reactor with the H atom source

Hong Jie Jin; Masaharu Shiratani; Takashi Kawasaki; Tsuyoshi Fukuzawa; Toshio Kinoshita; Yukio Watanabe; Hiroharu Kawasaki; Masaharu Toyofuku

J. Vac. Sci. Technol. A 17, 726–730 (1999) https://doi.org/10.1116/1.581692

Abstract

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High rate deposition of diamond-like carbon films by sheet-like plasma chemical vapor deposition

Ryozo Nonogaki; Suzuya Yamada; Tsutomu Araki; Tetsuya Wada

J. Vac. Sci. Technol. A 17, 731–734 (1999) https://doi.org/10.1116/1.581693

Abstract

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Low-temperature plasma deposition of dielectric coatings from organosilicon precursors

C.-T. Lin; F. Li; T. D. Mantei

J. Vac. Sci. Technol. A 17, 735–740 (1999) https://doi.org/10.1116/1.581642

Abstract

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Patterning of fluorine-, hydrogen-, and carbon-containing ${SiO}_{2}$ -like low dielectric constant materials in high-density fluorocarbon plasmas: Comparison with ${SiO}_{2}$

T. E. F. M. Standaert; P. J. Matsuo; S. D. Allen; G. S. Oehrlein; T. J. Dalton

J. Vac. Sci. Technol. A 17, 741–748 (1999) https://doi.org/10.1116/1.581643

Abstract

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Low damage reactive ion etching for photovoltaic applications

Sebastian Schaefer; Ralf Lüdemann

J. Vac. Sci. Technol. A 17, 749–754 (1999) https://doi.org/10.1116/1.581644

Abstract

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Silicon etch rate enhancement by traces of metal

P. G. M. Sebel; L. J. F. Hermans; H. C. W. Beijerinck

J. Vac. Sci. Technol. A 17, 755–762 (1999) https://doi.org/10.1116/1.581645

Abstract

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Bias-assisted etching of polycrystalline diamond films in hydrogen, oxygen, and argon microwave plasmas

W. J. Zhang; C. Sun; I. Bello; C. S. Lee; S. T. Lee

J. Vac. Sci. Technol. A 17, 763–767 (1999) https://doi.org/10.1116/1.581646

Abstract

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Effect of additive noble gases in chlorine-based inductively coupled plasma etching of GaN, InN, and AlN

Y. B. Hahn; D. C. Hays; S. M. Donovan; C. R. Abernathy; J. Han; R. J. Shul; H. Cho; K. B. Jung; S. J. Pearton

J. Vac. Sci. Technol. A 17, 768–773 (1999) https://doi.org/10.1116/1.581647

Abstract

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Degree of ${Cl}_{2}$ dissociation and etching characteristics in high-density plasmas

Seiji Samukawa

J. Vac. Sci. Technol. A 17, 774–779 (1999) https://doi.org/10.1116/1.581648

Abstract

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Characterization of high density ${CH}_{4} {/H}_{2} /Ar$ plasmas for compound semiconductor etching

C. R. Eddy, Jr.; D. Leonhardt; S. R. Douglass; V. A. Shamamian; B. D. Thoms; J. E. Butler

J. Vac. Sci. Technol. A 17, 780–792 (1999) https://doi.org/10.1116/1.581695

Abstract

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Smoothing of polycrystalline ${Cu(In,Ga)(Se,S)}_{2}$ thin films by low-energy ion-beam etching

F. Frost; G. Lippold; K. Otte; D. Hirsch; A. Schindler; F. Bigl

J. Vac. Sci. Technol. A 17, 793–798 (1999) https://doi.org/10.1116/1.581649

Abstract

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Platinum etching in ${Ar/Cl}_{2}$ plasmas with a photoresist mask

Teruo Shibano; Keisuke Nakamura; Takashi Takenaga; Kouichi Ono

J. Vac. Sci. Technol. A 17, 799–804 (1999) https://doi.org/10.1116/1.581650

Abstract

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Effect of nitric-phosphoric acid etches on material properties and back-contact formation of CdTe-based solar cells

Xiaonan Li; David W. Niles; Falah S. Hasoon; Richard J. Matson; Peter Sheldon

J. Vac. Sci. Technol. A 17, 805–809 (1999) https://doi.org/10.1116/1.581651

Abstract

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Adsorption and thermal decomposition of $C_{2} D_{5} I$ on the (110) and (111) planes of NiAl: A temperature programmed deposition and x-ray photoelectron spectroscopy study

Sanjay Chaturvedi; Daniel R. Strongin

J. Vac. Sci. Technol. A 17, 810–816 (1999) https://doi.org/10.1116/1.581652

Abstract

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Ellipsometric investigation of nucleation sites for chemical vapor deposition of Si on ${SiO}_{2}$ and ${Si}_{3} N_{4}$ surfaces

C. Basa; E. A. Irene

J. Vac. Sci. Technol. A 17, 817–822 (1999) https://doi.org/10.1116/1.581653

Abstract

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Preparation and operation of hydrogen cleaned GaAs(100) negative electron affinity photocathodes

K. A. Elamrawi; H. E. Elsayed-Ali

J. Vac. Sci. Technol. A 17, 823–831 (1999) https://doi.org/10.1116/1.581654

Abstract

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Platinum complex/Zn-porphyrin macrosystem assemblies: Electronic structure and conformational investigation by x-ray photoelectron spectroscopy

G. Polzonetti; A. Ferri; M. V. Russo; G. Iucci; S. Licoccia; R. Paolesse

J. Vac. Sci. Technol. A 17, 832–839 (1999) https://doi.org/10.1116/1.581655

Abstract

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Measurement of electron energy distribution function in an argon/copper plasma for ionized physical vapor deposition

Z. C. Lu; J. E. Foster; T. G. Snodgrass; J. H. Booske; A. E. Wendt

J. Vac. Sci. Technol. A 17, 840–844 (1999) https://doi.org/10.1116/1.581656

Abstract

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Development of a triplasmatron ion source for the generation of ${SF}_{5}^{+}$ and $F^{-}$ primary ion beams on an ion microscope secondary ion mass spectrometry instrument

Greg Gillen; R. Lance King; Frank Chmara

J. Vac. Sci. Technol. A 17, 845–852 (1999) https://doi.org/10.1116/1.581657

Abstract

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In situ x-ray photoelectron spectroscopy studies of interactions of evaporated metals with Poly(⁠ $p$ -phenylene vinylene) and its ring-substituted derivatives

M. Atreya; S. Li; E. T. Kang; K. G. Neoh; Z. H. Ma; K. L. Tan

J. Vac. Sci. Technol. A 17, 853–861 (1999) https://doi.org/10.1116/1.581658

Abstract

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Spectrophotometric analysis of aluminum nitride thin films

Han-Yong Joo; Hyeong Joon Kim; Sang June Kim; Sang Youl Kim

J. Vac. Sci. Technol. A 17, 862–870 (1999) https://doi.org/10.1116/1.582035

Abstract

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In situ substrate temperature measurements during radio frequency sputtering of ZnO thin film using fiber Bragg grating

N. K. Zayer; P. J. Henderson; A. J. C. Grellier; C. N. Pannell

J. Vac. Sci. Technol. A 17, 871–876 (1999) https://doi.org/10.1116/1.581696

Abstract

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Spectroellipsometric characterization of plasma-deposited Au/fluoropolymer nanocomposite films

Dan Dalacu; Ludvik Martinu

J. Vac. Sci. Technol. A 17, 877–883 (1999) https://doi.org/10.1116/1.581659

Abstract

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Friction-reducing mechanisms of molybdenum dithiocarbamate/zinc dithiophosphate combination: New insights in ${MoS}_{2}$ genesis

C. Grossiord; J.-M. Martin; Th. Le Mogne; K. Inoue; J. Igarashi

J. Vac. Sci. Technol. A 17, 884–890 (1999) https://doi.org/10.1116/1.581660

Abstract

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Real-time monitoring of structure and stress evolution of boron films grown on Si(100) by ultrahigh vacuum chemical vapor deposition

David C. Nesting; J. Kouvetakis; Sean Hearne; E. Chason; I. S. T. Tsong

J. Vac. Sci. Technol. A 17, 891–894 (1999) https://doi.org/10.1116/1.581661

Abstract

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Quantitative analysis of sputtered α- and α+β-brass surfaces by using Auger electron spectroscopy with principal component analysis-target factor analysis

G. E. Hammer

J. Vac. Sci. Technol. A 17, 895–898 (1999) https://doi.org/10.1116/1.582033

Abstract

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Influence of substrate bias voltage on the properties of ${CN}_{x}$ films prepared by reactive magnetron sputtering

V. Hajek; K. Rusnak; J. Vlcek; L. Martinu; S. C. Gujrathi

J. Vac. Sci. Technol. A 17, 899–908 (1999) https://doi.org/10.1116/1.581662

Abstract

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Crystalline SiC thin films deposited at room temperature using pulsed laser ablation of graphite and magnetron sputtering of silicon

Josekutty J. Nainaparampil; Jeffrey S. Zabinski

J. Vac. Sci. Technol. A 17, 909–916 (1999) https://doi.org/10.1116/1.581663

Abstract

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High-quality ${LaNiO}_{3}$ thin-film electrode grown by pulsed laser deposition

Xiangxin Guo; Chunling Li; Yueliang Zhou; Zhenghao Chen

J. Vac. Sci. Technol. A 17, 917–920 (1999) https://doi.org/10.1116/1.581664

Abstract

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Growth and structural properties of hydrogenated silicon films deposited by pulsed laser ablation

Sebastiano Trusso; Cirino Vasi; Fortunato Neri

J. Vac. Sci. Technol. A 17, 921–925 (1999) https://doi.org/10.1116/1.581665

Abstract

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Growth and structure of epitaxial ${CeO}_{2}$ by oxygen-plasma-assisted molecular beam epitaxy

Y. J. Kim; Y. Gao; G. S. Herman; S. Thevuthasan; W. Jiang; D. E. McCready; S. A. Chambers

J. Vac. Sci. Technol. A 17, 926–935 (1999) https://doi.org/10.1116/1.581666

Abstract

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Different effect of annealing temperature on resistivity for stoichiometric, W rich, and N rich tungsten nitride films

Jun Lin; Atsuhiro Tsukune; Toshiya Suzuki; Masao Yamada

J. Vac. Sci. Technol. A 17, 936–938 (1999) https://doi.org/10.1116/1.581667

Abstract

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Mass spectroscopy of recoiled ions, secondary ion mass spectroscopy, and Auger electron spectroscopy investigation of $Y_{2} O_{3}$ -stabilized ${ZrO}_{2} (100)$ and (110)

G. S. Herman; M. A. Henderson; K. A. Starkweather; E. P. McDaniel

J. Vac. Sci. Technol. A 17, 939–944 (1999) https://doi.org/10.1116/1.581668

Abstract

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Control of the structure and properties of aluminum oxide coatings deposited by pulsed magnetron sputtering

P. J. Kelly; R. D. Arnell

J. Vac. Sci. Technol. A 17, 945–953 (1999) https://doi.org/10.1116/1.581669

Abstract

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Effects of vacuum and inert gas annealing of ultrathin tantalum pentoxide films on Si(100)

A. Y. Mao; K. A. Son; J. M. White; D. L. Kwong; D. A. Roberts; R. N. Vrtis

J. Vac. Sci. Technol. A 17, 954–960 (1999) https://doi.org/10.1116/1.581670

Abstract

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Epitaxial growth and characterization of ${Ce}_{1−x} {Zr}_{x} O_{2}$ thin films

Y. Gao; G. S. Herman; S. Thevuthasan; C. H. F. Peden; S. A. Chambers

J. Vac. Sci. Technol. A 17, 961–969 (1999) https://doi.org/10.1116/1.581671

Abstract

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Modeling of silicon deposition process scale-up employing axisymmetric ring nozzle sources. I

G. Chen; I. D. Boyd

J. Vac. Sci. Technol. A 17, 970–977 (1999) https://doi.org/10.1116/1.581672

Abstract

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Three dimensional modeling of silicon deposition process scale-up employing supersonic jets. II

G. Chen; I. D. Boyd; J. R. Engstrom

J. Vac. Sci. Technol. A 17, 978–985 (1999) https://doi.org/10.1116/1.581673

Abstract

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Nanocrystalline WC and $WC /a- C$ composite coatings produced from intersected plasma fluxes at low deposition temperatures

A. A. Voevodin; J. P. O’Neill; S. V. Prasad; J. S. Zabinski

J. Vac. Sci. Technol. A 17, 986–992 (1999) https://doi.org/10.1116/1.581674

Abstract

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Behavior of thin Ta-based films in the Cu/barrier/Si system

Momtchil Stavrev; Dirk Fischer; Frank Praessler; Christian Wenzel; Kurt Drescher

J. Vac. Sci. Technol. A 17, 993–1001 (1999) https://doi.org/10.1116/1.581697

Abstract

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Thermal outgassing of vacuum glazing

M. Lenzen; G. M. Turner; R. E. Collins

J. Vac. Sci. Technol. A 17, 1002–1017 (1999) https://doi.org/10.1116/1.581675

Abstract

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Improvement of bonding strength between Au/Ti and ${SiO}_{2}$ films by Si layer insertion

Hirotoshi Nagata; Takashi Shinriki; Kaori Shima; Masumi Tamai; Eungi Min Haga

J. Vac. Sci. Technol. A 17, 1018–1023 (1999) https://doi.org/10.1116/1.581676

Abstract

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Electronic structure and mechanical properties of resistant coatings: The chromium molybdenum nitride system

P. Hones; R. Sanjinés; F. Lévy; O. Shojaei

J. Vac. Sci. Technol. A 17, 1024–1030 (1999) https://doi.org/10.1116/1.581677

Abstract

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Hydrogen plasma pretreatment effect on the deposition of aluminum thin films from metalorganic chemical vapor deposition using dimethylethylamine alane

Tae Woong Jang; Hwa Sung Rhee; Byung Tae Ahn

J. Vac. Sci. Technol. A 17, 1031–1035 (1999) https://doi.org/10.1116/1.581678

Abstract

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Optical and mechanical consequences of microstructural alteration of alpha platinum dioxide films

L. Maya; L. M. Anovitz; T. Thundat; C. S. Yust

J. Vac. Sci. Technol. A 17, 1036–1039 (1999) https://doi.org/10.1116/1.581679

Abstract

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Outgassing in thin wall stainless steel cells

Vincenc Nemanič; Janez Šetina

J. Vac. Sci. Technol. A 17, 1040–1046 (1999) https://doi.org/10.1116/1.581680

Abstract

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Metastable deexcitation spectroscopy study of oxygen adsorption on a polycrystalline titanium surface

Mitsunori Kurahashi; Yasushi Yamauchi

J. Vac. Sci. Technol. A 17, 1047–1052 (1999) https://doi.org/10.1116/1.581681

Abstract

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Characterization of the Ti-doped diamond-like carbon coatings on a type 304 stainless steel

W. P. Hsieh; D. Y. Wang; F. S. Shieu

J. Vac. Sci. Technol. A 17, 1053–1058 (1999) https://doi.org/10.1116/1.581682

Abstract

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Passivation of stainless steel by ${δ-Al}_{2} O_{3}$ films resistant to ozonized water

M. Yoshida; A. Seki; Y. Shirai; T. Ohmi

J. Vac. Sci. Technol. A 17, 1059–1065 (1999) https://doi.org/10.1116/1.581683

Abstract

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Particle measurements in vacuum tools by in situ particle monitor

Haruzo Miyashita; Toshio Kikuchi; Yohsuke Kawasaki; Yoshio Katakura; Nobuharu Ohsako

J. Vac. Sci. Technol. A 17, 1066–1070 (1999) https://doi.org/10.1116/1.581684

Abstract

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Thermal relaxation of hot filaments

Tomasz Durakiewicz; Stanislaw Halas

J. Vac. Sci. Technol. A 17, 1071–1074 (1999) https://doi.org/10.1116/1.581685

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