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Volume 17, Issue 2

March 1999

ISSN 0734-2101

EISSN 1520-8559

ARTICLES

Molecularly engineered low temperature atomic layer growth of aluminum nitride on Si(100)

Herng Liu; J. W. Rogers, Jr.

J. Vac. Sci. Technol. A 17, 325–331 (1999) https://doi.org/10.1116/1.581591

Abstract

View articletitled, Molecularly engineered low temperature atomic layer growth of aluminum nitride on Si(100)

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Study on the transition temperature and phase formation sequence in TiZr silicides on Si(100)

Taeho Cha; Sanghyun Yoon; Dongkun Lee; Hyun Ryu; Hwackjoo Lee; Changsoo Kim; Hyeongtag Jeon

J. Vac. Sci. Technol. A 17, 332–337 (1999) https://doi.org/10.1116/1.581592

Abstract

View articletitled, Study on the transition temperature and phase formation sequence in TiZr silicides on Si(100)

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Synthesis and characterization of In–Tl–Sb compounds grown by molecular beam epitaxy

M. J. Antonell; C. R. Abernathy; W. A. Acree; M. A. Berding; A. Sher

J. Vac. Sci. Technol. A 17, 338–341 (1999) https://doi.org/10.1116/1.581639

Abstract

View articletitled, Synthesis and characterization of In–Tl–Sb compounds grown by molecular beam epitaxy

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Line-of-sight mass spectrometric study of As/Sb exchange on Sb-terminated and Ga-terminated GaSb (001) during molecular beam epitaxy

Qianghua Xie; J. E. Van Nostrand

J. Vac. Sci. Technol. A 17, 342–346 (1999) https://doi.org/10.1116/1.581593

Abstract

View articletitled, Line-of-sight mass spectrometric study of As/Sb exchange on Sb-terminated and Ga-terminated GaSb (001) during molecular beam epitaxy

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Study of ohmic multilayer metal contacts to $p$ -type ZnSe

A. Rinta-Möykky; P. Uusimaa; S. Suhonen; M. Valden; A. Salokatve; M. Pessa; J. Likonen

J. Vac. Sci. Technol. A 17, 347–353 (1999) https://doi.org/10.1116/1.581594

Abstract

View articletitled, Study of ohmic multilayer metal contacts to <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">p</mi></math>-type ZnSe

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Ge(001):B gas-source molecular beam epitaxy: B surface segregation, hydrogen desorption, and film growth kinetics

H. Kim; J. E. Greene

J. Vac. Sci. Technol. A 17, 354–362 (1999) https://doi.org/10.1116/1.581595

Abstract

View articletitled, Ge(001):B gas-source molecular beam epitaxy: B surface segregation, hydrogen desorption, and film growth kinetics

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Effects of surface chemical treatment on the formation of metal GaAs interfaces

Daisei Shoji; Masanori Shinohara; Taka-aki Miura; Michio Niwano; Nobuo Miyamoto

J. Vac. Sci. Technol. A 17, 363–372 (1999) https://doi.org/10.1116/1.581596

Abstract

View articletitled, Effects of surface chemical treatment on the formation of metal GaAs interfaces

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Model of interfacial thermal resistance of diamond composites

K. Jagannadham

J. Vac. Sci. Technol. A 17, 373–379 (1999) https://doi.org/10.1116/1.581597

Abstract

View articletitled, Model of interfacial thermal resistance of diamond composites

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Combined beam profile reflectometry, beam profile ellipsometry and ultraviolet-visible spectrophotometry for the characterization of ultrathin oxide-nitride-oxide films on silicon

J. M. Leng; J. Opsal; D. E. Aspnes

J. Vac. Sci. Technol. A 17, 380–384 (1999) https://doi.org/10.1116/1.581598

Abstract

View articletitled, Combined beam profile reflectometry, beam profile ellipsometry and ultraviolet-visible spectrophotometry for the characterization of ultrathin oxide-nitride-oxide films on silicon

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Water dissociation and selective absorption in the ${Zr[V}_{0.5} {Fe}_{0.5}]_{2}$ gettering alloy: An x-ray photoemission spectroscopy investigation

E. Narducci; J. Kovac; F. Ghezzi; N. Venkataramani; M. Sancrotti

J. Vac. Sci. Technol. A 17, 385–390 (1999) https://doi.org/10.1116/1.581640

Abstract

View articletitled, Water dissociation and selective absorption in the <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Zr[V</mi><mrow><mi mathvariant="normal">0.5</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Fe</mi><mrow><mtext>0.5</mtext></mrow></msub><msub xmlns=""><mi>]</mi><mrow><mn>2</mn></mrow></msub></math> gettering alloy: An x-ray photoemission spectroscopy investigation

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Analysis of silicon oxynitrides with spectroscopic ellipsometry and Auger spectroscopy, compared to analyses by Rutherford backscattering spectrometry and Fourier transform infrared spectroscopy

Harland G. Tompkins; Richard B. Gregory; Paul W. Deal; Steven M. Smith

J. Vac. Sci. Technol. A 17, 391–397 (1999) https://doi.org/10.1116/1.582030

Abstract

View articletitled, Analysis of silicon oxynitrides with spectroscopic ellipsometry and Auger spectroscopy, compared to analyses by Rutherford backscattering spectrometry and Fourier transform infrared spectroscopy

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Transmission characteristics of multilayer structure in the soft x-ray spectral region and its application to the design of quarter-wave plates at 13 and 4.4 nm

Dong-Eon Kim; Su-Mi Lee; In-joon Jeon

J. Vac. Sci. Technol. A 17, 398–402 (1999) https://doi.org/10.1116/1.581599

Abstract

View articletitled, Transmission characteristics of multilayer structure in the soft x-ray spectral region and its application to the design of quarter-wave plates at 13 and 4.4 nm

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Investigation of electron-beam-induced phase transitions in amorphous aluminum trifluoride thin films using transmission electron microscopy

G. S. Chen

J. Vac. Sci. Technol. A 17, 403–410 (1999) https://doi.org/10.1116/1.581600

Abstract

View articletitled, Investigation of electron-beam-induced phase transitions in amorphous aluminum trifluoride thin films using transmission electron microscopy

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Electron spectroscopic study of C–N bond formation by low-energy nitrogen ion implantation of graphite and diamond surfaces

I. Gouzman; R. Brener; A. Hoffman

J. Vac. Sci. Technol. A 17, 411–420 (1999) https://doi.org/10.1116/1.581601

Abstract

View articletitled, Electron spectroscopic study of C–N bond formation by low-energy nitrogen ion implantation of graphite and diamond surfaces

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A ${(NH}_{4})_{2} S_{x}$ -treated InSb(001) surface studied by using x-ray photoelectron spectroscopy, low-energy electron diffraction, and inverse photoemission spectroscopy

S. Ichikawa; Y. Suzuki; N. Sanada; N. Utsumi; T. Yamaguchi; X. Y. Gong; Y. Fukuda

J. Vac. Sci. Technol. A 17, 421–424 (1999) https://doi.org/10.1116/1.581602

Abstract

View articletitled, A <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">(NH</mi><mrow><mi mathvariant="normal">4</mi></mrow></msub><msub xmlns=""><mi>)</mi><mrow><mn>2</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">S</mi><mrow><mi>x</mi></mrow></msub></math>-treated InSb(001) surface studied by using x-ray photoelectron spectroscopy, low-energy electron diffraction, and inverse photoemission spectroscopy

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Effects of helium dilution of $TEOS - O_{2} - C_{2} F_{6}$ gas mixture on plasma-enhanced chemical vapor deposition of fluorine-doped silicon oxide film

Masaki Yoshimaru; Satoshi Koizumi; Kimiaki Shimokawa; Y. Mori; H. Fukuda; N. Matsuki

J. Vac. Sci. Technol. A 17, 425–432 (1999) https://doi.org/10.1116/1.581603

Abstract

View articletitled, Effects of helium dilution of <math xmlns="http://www.w3.org/1998/Math/MathML"><mi mathvariant="normal" xmlns="">TEOS</mi><mi xmlns="">–</mi><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><mi xmlns="">–</mi><msub xmlns=""><mi mathvariant="normal">C</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">F</mi><mrow><mi mathvariant="normal">6</mi></mrow></msub></math> gas mixture on plasma-enhanced chemical vapor deposition of fluorine-doped silicon oxide film

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Silicon nitride thin films deposited by electron cyclotron resonance plasma-enhanced chemical vapor deposition

M. Lapeyrade; M. P. Besland; C. Meva’a; A. Sibaï; G. Hollinger

J. Vac. Sci. Technol. A 17, 433–444 (1999) https://doi.org/10.1116/1.582106

Abstract

View articletitled, Silicon nitride thin films deposited by electron cyclotron resonance plasma-enhanced chemical vapor deposition

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Pulsed plasma-enhanced chemical vapor deposition from ${CH}_{2} F_{2},$ $C_{2} H_{2} F_{4},$ and ${CHClF}_{2}$

Catherine B. Labelle; Karen K. Gleason

J. Vac. Sci. Technol. A 17, 445–452 (1999) https://doi.org/10.1116/1.581604

Abstract

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Depth dependence of hydrogenation using electron cyclotron plasma in GaAs-on-Si solar cell structures

H. Kakinuma; T. Ueda; S. Gotoh; M. Akiyama

J. Vac. Sci. Technol. A 17, 453–457 (1999) https://doi.org/10.1116/1.581605

Abstract

View articletitled, Depth dependence of hydrogenation using electron cyclotron plasma in GaAs-on-Si solar cell structures

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Effect of postplasma treatment on characteristics of electron cyclotron resonance chemical vapor deposition SiOF films

Seoghyeong Lee; Jong-Wan Park

J. Vac. Sci. Technol. A 17, 458–462 (1999) https://doi.org/10.1116/1.581606

Abstract

View articletitled, Effect of postplasma treatment on characteristics of electron cyclotron resonance chemical vapor deposition SiOF films

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Color, structure, and properties of TiN coatings prepared by plasma enhanced chemical vapor deposition

Jae-Woong Nah; Byoung-June Kim; Dong-Kak Lee; Jung-Joong Lee

J. Vac. Sci. Technol. A 17, 463–469 (1999) https://doi.org/10.1116/1.581607

Abstract

View articletitled, Color, structure, and properties of TiN coatings prepared by plasma enhanced chemical vapor deposition

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Audio-frequency glow discharge for plasma chemical vapor deposition from organic compounds of the carbon family

J. Tyczkowski

J. Vac. Sci. Technol. A 17, 470–479 (1999) https://doi.org/10.1116/1.581608

Abstract

View articletitled, Audio-frequency glow discharge for plasma chemical vapor deposition from organic compounds of the carbon family

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Langmuir probe studies of a transformer-coupled plasma, aluminum etcher

M. V. Malyshev; V. M. Donnelly; A. Kornblit; N. A. Ciampa; J. I. Colonell; J. T. C. Lee

J. Vac. Sci. Technol. A 17, 480–492 (1999) https://doi.org/10.1116/1.581609

Abstract

View articletitled, Langmuir probe studies of a transformer-coupled plasma, aluminum etcher

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Comparison of electron property measurements in an inductively coupled plasma made by Langmuir probe and laser Thomson scattering techniques

M. D. Bowden; M. Kogano; Y. Suetome; T. Hori; K. Uchino; K. Muraoka

J. Vac. Sci. Technol. A 17, 493–499 (1999) https://doi.org/10.1116/1.581610

Abstract

View articletitled, Comparison of electron property measurements in an inductively coupled plasma made by Langmuir probe and laser Thomson scattering techniques

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Effects of rare gas dilution for control of dissociation, ionization, and radical density in fluorocarbon ultrahigh-frequency plasmas

Seiji Samukawa; Toshiki Nakano

J. Vac. Sci. Technol. A 17, 500–505 (1999) https://doi.org/10.1116/1.581611

Abstract

View articletitled, Effects of rare gas dilution for control of dissociation, ionization, and radical density in fluorocarbon ultrahigh-frequency plasmas

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Energy distribution of ions bombarding biased electrodes in high density plasma reactors

Erik A. Edelberg; Andrew Perry; Neil Benjamin; Eray S. Aydil

J. Vac. Sci. Technol. A 17, 506–516 (1999) https://doi.org/10.1116/1.581612

Abstract

View articletitled, Energy distribution of ions bombarding biased electrodes in high density plasma reactors

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Planar laser-induced fluorescence of ${CF}_{2}$ in $O_{2} / {CF}_{4}$ and $O_{2} / C_{2} F_{6}$ chamber-cleaning plasmas: Spatial uniformity and comparison to electrical measurements

Kristen L. Steffens; Mark A. Sobolewski

J. Vac. Sci. Technol. A 17, 517–527 (1999) https://doi.org/10.1116/1.581613

Abstract

View articletitled, Planar laser-induced fluorescence of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">CF</mi><mrow><mn>2</mn></mrow></msub></math> in <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mn>2</mn></mrow></msub><mi xmlns="">/</mi><msub xmlns=""><mi mathvariant="normal">CF</mi><mrow><mn>4</mn></mrow></msub></math> and <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mn>2</mn></mrow></msub><mi xmlns="">/</mi><msub xmlns=""><mi mathvariant="normal">C</mi><mrow><mn>2</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">F</mi><mrow><mn>6</mn></mrow></msub></math> chamber-cleaning plasmas: Spatial uniformity and comparison to electrical measurements

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Radial profile of energetic particles bombarding the substrate in a glow discharge

Juan Carlos Moreno-Marı́n; Isabel Abril; Rafael Garcia-Molina

J. Vac. Sci. Technol. A 17, 528–534 (1999) https://doi.org/10.1116/1.581614

Abstract

View articletitled, Radial profile of energetic particles bombarding the substrate in a glow discharge

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Patterning of NiFe and NiFeCo in ${CO/NH}_{3}$ high density plasmas

K. B. Jung; J. Hong; H. Cho; S. Onishi; D. Johnson; Y. D. Park; J. R. Childress; S. J. Pearton

J. Vac. Sci. Technol. A 17, 535–539 (1999) https://doi.org/10.1116/1.581615

Abstract

View articletitled, Patterning of NiFe and NiFeCo in <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">CO/NH</mi><mrow><mn>3</mn></mrow></msub></math> high density plasmas

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Formation of alkylsiloxane self-assembled monolayers on ${Si}_{3} N_{4}$

Myung M. Sung; G. Jonathan Kluth; Roya Maboudian

J. Vac. Sci. Technol. A 17, 540–544 (1999) https://doi.org/10.1116/1.581616

Abstract

View articletitled, Formation of alkylsiloxane self-assembled monolayers on <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Si</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">N</mi><mrow><mi mathvariant="normal">4</mi></mrow></msub></math>

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Growth kinetics and relationship between structure and mechanical properties of $a- C(N):H$ films deposited in acetylene–nitrogen atmospheres

L. G. Jacobsohn; F. L. Freire, Jr.; D. F. Franceschini; M. M. Lacerda; G. Mariotto

J. Vac. Sci. Technol. A 17, 545–551 (1999) https://doi.org/10.1116/1.581641

Abstract

View articletitled, Growth kinetics and relationship between structure and mechanical properties of <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">a-</mi><mi mathvariant="normal" xmlns="">C(N):H</mi></math> films deposited in acetylene–nitrogen atmospheres

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Temperature dependence of ${SiO}_{2}$ /Si interfacial structure formed by radio-frequency magnetron sputter deposited ${SiO}_{2}$ thin films on Si(111)

Boquan Li; Toshiyuki Fujimoto; Isao Kojima

J. Vac. Sci. Technol. A 17, 552–554 (1999) https://doi.org/10.1116/1.581617

Abstract

View articletitled, Temperature dependence of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SiO</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math>/Si interfacial structure formed by radio-frequency magnetron sputter deposited <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SiO</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math> thin films on Si(111)

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Rectangular magnetron with full target erosion

J. Musil

J. Vac. Sci. Technol. A 17, 555–563 (1999) https://doi.org/10.1116/1.581618

Abstract

View articletitled, Rectangular magnetron with full target erosion

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Composition, structure, and dielectric tunability of epitaxial ${SrTiO}_{3}$ thin films grown by radio frequency magnetron sputtering

Xin Wang; Ulf Helmersson; Lynnette D. Madsen; Ivan P. Ivanov; Peter Münger; Staffan Rudner; B. Hjörvarsson; Jan-Eric Sundgren

J. Vac. Sci. Technol. A 17, 564–570 (1999) https://doi.org/10.1116/1.581619

Abstract

View articletitled, Composition, structure, and dielectric tunability of epitaxial <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SrTiO</mi><mrow><mn>3</mn></mrow></msub></math> thin films grown by radio frequency magnetron sputtering

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Comparison of the temperature dependence of the properties of ion beam and magnetron sputtered Fe films on (100) GaAs

S. D. Bernstein; T. Y. Wong; R. W. Tustison

J. Vac. Sci. Technol. A 17, 571–576 (1999) https://doi.org/10.1116/1.581620

Abstract

View articletitled, Comparison of the temperature dependence of the properties of ion beam and magnetron sputtered Fe films on (100) GaAs

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Transmission electron microscopy study of platinum clusters on ${Al}_{2} O_{3} /NiAl(110)$ under the influence of electron irradiation

S. A. Nepijko; M. Klimenkov; H. Kuhlenbeck; H.-J. Freund

J. Vac. Sci. Technol. A 17, 577–583 (1999) https://doi.org/10.1116/1.581621

Abstract

View articletitled, Transmission electron microscopy study of platinum clusters on <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Al</mi><mrow><mn>2</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mn>3</mn></mrow></msub><mi mathvariant="normal" xmlns="">/NiAl(110)</mi></math> under the influence of electron irradiation

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Polymerization of dual ion beam deposited ${CN}_{x}$ films with increasing N content

Y. M. Ng; C. W. Ong; X.-A. Zhao; C. L. Choy

J. Vac. Sci. Technol. A 17, 584–592 (1999) https://doi.org/10.1116/1.581622

Abstract

View articletitled, Polymerization of dual ion beam deposited <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">CN</mi><mrow><mi>x</mi></mrow></msub></math> films with increasing N content

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X-ray emission study of ion beam mixed Cu/Al films on polyimide

E. Z. Kurmaev; D. A. Zatsepin; R. P. Winarski; S. Stadler; D. L. Ederer; A. Moewes; V. V. Fedorenko; S. N. Shamin; V. R. Galakhov; G. S. Chang; C. N. Whang

J. Vac. Sci. Technol. A 17, 593–596 (1999) https://doi.org/10.1116/1.581623

Abstract

View articletitled, X-ray emission study of ion beam mixed Cu/Al films on polyimide

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Study of stress evolution of boron nitride films prepared by ion assisted deposition

Michael Zeitler; Stefan Sienz; Bernd Rauschenbach

J. Vac. Sci. Technol. A 17, 597–602 (1999) https://doi.org/10.1116/1.581624

Abstract

View articletitled, Study of stress evolution of boron nitride films prepared by ion assisted deposition

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Mechanical properties and residual stress in AlN/Al mixed films prepared by ion-beam-assisted deposition

Yoshihisa Watanabe; Shingo Uchiyama; Yoshikazu Nakamura; Chunlang Li; Tohru Sekino; Koichi Niihara

J. Vac. Sci. Technol. A 17, 603–607 (1999) https://doi.org/10.1116/1.582034

Abstract

View articletitled, Mechanical properties and residual stress in AlN/Al mixed films prepared by ion-beam-assisted deposition

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Particle generation in W–Ti deposition

Chi-Fung Lo; Paul Gilman

J. Vac. Sci. Technol. A 17, 608–610 (1999) https://doi.org/10.1116/1.581625

Abstract

View articletitled, Particle generation in W–Ti deposition

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Influence of crucible material and source alloy composition on thermally evaporated indium tin oxide layers

H. R. Kerp; M. W. M. van Cleef; A. B. Wit; R. E. I. Schropp; R. Galloni; P. Lazzeri

J. Vac. Sci. Technol. A 17, 611–614 (1999) https://doi.org/10.1116/1.581626

Abstract

View articletitled, Influence of crucible material and source alloy composition on thermally evaporated indium tin oxide layers

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Velocity distribution of organic molecules emitted from effusion cells measured by time-of-flight technique

Toshihiro Shimada; Jun Koide; Kyoung Ah Cho; Atsushi Koma

J. Vac. Sci. Technol. A 17, 615–618 (1999) https://doi.org/10.1116/1.581627

Abstract

View articletitled, Velocity distribution of organic molecules emitted from effusion cells measured by time-of-flight technique

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Formation of $β- {FeSi}_{2}$ films by pulsed laser deposition using iron target

Zhengxin Liu; Masayuki Okoshi; Mitsugu Hanabusa

J. Vac. Sci. Technol. A 17, 619–623 (1999) https://doi.org/10.1116/1.581628

Abstract

View articletitled, Formation of <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">β-</mi><msub xmlns=""><mi mathvariant="normal">FeSi</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math> films by pulsed laser deposition using iron target

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Processing of porous GaAs at low frequency sparking

A. Gudiño-Martínez; E. Rosendo; M. A. Vidal; H. Navarro-Contreras; M. Rojas-López

J. Vac. Sci. Technol. A 17, 624–629 (1999) https://doi.org/10.1116/1.581629

Abstract

View articletitled, Processing of porous GaAs at low frequency sparking

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Ni content and grain size dependency of perovskite structure ${La}_{0.8} {Sr}_{0.2} {Co}_{1−x} {Ni}_{x} O_{3−δ}$ thin films for CO gas sensor

C. M. Chiu; Y. H. Chang

J. Vac. Sci. Technol. A 17, 630–634 (1999) https://doi.org/10.1116/1.581638

Abstract

View articletitled, Ni content and grain size dependency of perovskite structure <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">La</mi><mrow><mi mathvariant="normal">0.8</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Sr</mi><mrow><mi mathvariant="normal">0.2</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Co</mi><mrow><mtext>1−x</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ni</mi><mrow><mi>x</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mtext>3−δ</mtext></mrow></msub></math> thin films for CO gas sensor

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Photon stimulated desorption of an unbaked stainless steel chamber by 3.75 keV critical energy photons

C. Herbeaux; P. Marin; V. Baglin; O. Gröbner

J. Vac. Sci. Technol. A 17, 635–643 (1999) https://doi.org/10.1116/1.581630

Abstract

View articletitled, Photon stimulated desorption of an unbaked stainless steel chamber by 3.75 keV critical energy photons

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Study of the surface morphology and gas sensing properties of ${WO}_{3}$ thin films deposited by vacuum thermal evaporation

S. Santucci; L. Lozzi; M. Passacantando; S. Di Nardo; A. R. Phani; C. Cantalini; M. Pelino

J. Vac. Sci. Technol. A 17, 644–649 (1999) https://doi.org/10.1116/1.581631

Abstract

View articletitled, Study of the surface morphology and gas sensing properties of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">WO</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub></math> thin films deposited by vacuum thermal evaporation

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Measurements of trace gaseous ambient impurities on an atmospheric pressure rapid thermal processor

Eiichi Kondoh; Guy Vereecke; Marc M. Heyns; Karen Maex; Thomas Gutt

J. Vac. Sci. Technol. A 17, 650–656 (1999) https://doi.org/10.1116/1.581632

Abstract

View articletitled, Measurements of trace gaseous ambient impurities on an atmospheric pressure rapid thermal processor

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Fluorination of Si(001)-2×1 surface near step edges: A mechanism for surface defect induced etching

Deepak Srivastava; Timur Halicioglu; Tracy A. Schoolcraft

J. Vac. Sci. Technol. A 17, 657–661 (1999) https://doi.org/10.1116/1.581633

Abstract

View articletitled, Fluorination of Si(001)-2×1 surface near step edges: A mechanism for surface defect induced etching

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BRIEF REPORTS AND COMMENTS

Chemical and structural alterations induced at ${Kapton}^{®}$ surfaces by air exposures following atomic oxygen or 1 keV ${Ar}^{+}$ treatments

John T. Wolan; Gar B. Hoflund

J. Vac. Sci. Technol. A 17, 662–664 (1999) https://doi.org/10.1116/1.582027

View articletitled, Chemical and structural alterations induced at <math xmlns="http://www.w3.org/1998/Math/MathML"><msup xmlns=""><mi mathvariant="normal">Kapton</mi><mrow><mi mathvariant="normal">®</mi></mrow></msup></math> surfaces by air exposures following atomic oxygen or 1 keV <math xmlns="http://www.w3.org/1998/Math/MathML"><msup xmlns=""><mi mathvariant="normal">Ar</mi><mrow><mi mathvariant="normal">+</mi></mrow></msup></math> treatments

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Mechanism of nitrogen removal from silicon nitride by nitric oxide

M. G. Blain

J. Vac. Sci. Technol. A 17, 665–667 (1999) https://doi.org/10.1116/1.582028

View articletitled, Mechanism of nitrogen removal from silicon nitride by nitric oxide

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SHOP NOTES

Transferable resistively heated metal evaporator for ultrahigh vacuum

Thomas G. Drummond; James S. Burgess; William T. Wallace; Andrew J. Leavitt

J. Vac. Sci. Technol. A 17, 668–669 (1999) https://doi.org/10.1116/1.581634

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Photon shield for atomic hydrogen plasma sources

H. Nienhaus; B. Gergen; H. S. Bergh; A. Majumdar; W. H. Weinberg; E. W. McFarland

J. Vac. Sci. Technol. A 17, 670–672 (1999) https://doi.org/10.1116/1.581635

Abstract

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A convenient means of securing gaskets during assembly of vertically oriented knife-edge flanges

P. R. McCabe; A. L. Utz

J. Vac. Sci. Technol. A 17, 673 (1999) https://doi.org/10.1116/1.581636

View articletitled, A convenient means of securing gaskets during assembly of vertically oriented knife-edge flanges

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Ultrahigh vacuum dual fluid line rotatable connector

B. Kaczer; D. E. Jones; H.-J. Im; J. P. Pelz

J. Vac. Sci. Technol. A 17, 674–675 (1999) https://doi.org/10.1116/1.581637

Abstract

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