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Residual stress in low pressure chemical vapor deposition ${SiN}_{x}$ films deposited from silane and ammonia

P. Temple-Boyer; C. Rossi; E. Saint-Etienne; E. Scheid

J. Vac. Sci. Technol. A 16, 2003–2007 (1998) https://doi.org/10.1116/1.581302

View articletitled, Residual stress in low pressure chemical vapor deposition <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SiN</mi><mrow><mi>x</mi></mrow></msub></math> films deposited from silane and ammonia

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Plasma cleaning and nitridation of sapphire substrates for ${Al}_{x} {Ga}_{1−x} N$ epitaxy as studied by x-ray photoelectron diffraction

M. Seelmann-Eggebert; H. Zimmermann; H. Obloh; R. Niebuhr; B. Wachtendorf

J. Vac. Sci. Technol. A 16, 2008–2015 (1998) https://doi.org/10.1116/1.581303

Abstract

View articletitled, Plasma cleaning and nitridation of sapphire substrates for <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Al</mi><mrow><mi>x</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ga</mi><mrow><mtext>1−x</mtext></mrow></msub><mi mathvariant="normal" xmlns="">N</mi></math> epitaxy as studied by x-ray photoelectron diffraction

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Application of a toroidal plasma source to TiN thin film deposition

B. C. Zhang; R. C. Cross

J. Vac. Sci. Technol. A 16, 2016–2020 (1998) https://doi.org/10.1116/1.581304

Abstract

View articletitled, Application of a toroidal plasma source to TiN thin film deposition

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Plasma-deposited silicon oxide and silicon nitride films on poly(ethylene terephthalate): A multitechnique study of the interphase regions

A. S. da Silva Sobrinho; N. Schühler; J. E. Klemberg-Sapieha; M. R. Wertheimer; M. Andrews; S. C. Gujrathi

J. Vac. Sci. Technol. A 16, 2021–2030 (1998) https://doi.org/10.1116/1.581305

Abstract

View articletitled, Plasma-deposited silicon oxide and silicon nitride films on poly(ethylene terephthalate): A multitechnique study of the interphase regions

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Reactive ion etching for AlGalnP/GaInP laser structures

Y. Z. Juang; Y. K. Su; S. J. Chang; D. F. Huang; S. C. Chang

J. Vac. Sci. Technol. A 16, 2031–2036 (1998) https://doi.org/10.1116/1.581306

Abstract

View articletitled, Reactive ion etching for AlGalnP/GaInP laser structures

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Reactive ion etching of piezoelectric materials in ${CF}_{4} / {CHF}_{3}$ plasmas

Patrick W. Leech

J. Vac. Sci. Technol. A 16, 2037–2041 (1998) https://doi.org/10.1116/1.581307

Abstract

View articletitled, Reactive ion etching of piezoelectric materials in <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">CF</mi><mrow><mi mathvariant="normal">4</mi></mrow></msub><mi xmlns="">/</mi><msub xmlns=""><mi mathvariant="normal">CHF</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub></math> plasmas

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Deposition and characterization of gold thin films on Si by ${CF}_{4} {+O}_{2}$ gas microwave plasma

Yasuyuki Taniguchi; Tadashi Shin-mura

J. Vac. Sci. Technol. A 16, 2042–2046 (1998) https://doi.org/10.1116/1.581308

Abstract

View articletitled, Deposition and characterization of gold thin films on Si by <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">CF</mi><mrow><mi mathvariant="normal">4</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">+O</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math> gas microwave plasma

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Remote plasma etching of silicon nitride and silicon dioxide using ${NF}_{3} / O_{2}$ gas mixtures

B. E. E. Kastenmeier; P. J. Matsuo; G. S. Oehrlein; J. G. Langan

J. Vac. Sci. Technol. A 16, 2047–2056 (1998) https://doi.org/10.1116/1.581309

Abstract

View articletitled, Remote plasma etching of silicon nitride and silicon dioxide using <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">NF</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub><mi xmlns="">/</mi><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math> gas mixtures

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Effects of wall recombination on the etch rate and plasma composition of an etch reactor

Gabriel I. Font; Iain D. Boyd; Jitendra Balakrishnan

J. Vac. Sci. Technol. A 16, 2057–2064 (1998) https://doi.org/10.1116/1.581310

Abstract

View articletitled, Effects of wall recombination on the etch rate and plasma composition of an etch reactor

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Radial distributions of ion velocity, temperature, and density in ultrahigh-frequency, inductively coupled, and electron cyclotron resonance plasmas

Toshiki Nakano; Seiji Samukawa

J. Vac. Sci. Technol. A 16, 2065–2072 (1998) https://doi.org/10.1116/1.581311

Abstract

View articletitled, Radial distributions of ion velocity, temperature, and density in ultrahigh-frequency, inductively coupled, and electron cyclotron resonance plasmas

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Reactive sputtered titanium carbide/nitride and diamondlike carbon coatings

Jianguo Deng; Manuel Braun; Ying Wei

J. Vac. Sci. Technol. A 16, 2073–2077 (1998) https://doi.org/10.1116/1.581312

Abstract

View articletitled, Reactive sputtered titanium carbide/nitride and diamondlike carbon coatings

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Influence of surface impurities on plasma-driven permeation of deuterium through nickel

Yuji Hatano; Hirofumi Nakamura; Hirotaka Furuya; Masayasu Sugisaki

J. Vac. Sci. Technol. A 16, 2078–2083 (1998) https://doi.org/10.1116/1.581313

Abstract

View articletitled, Influence of surface impurities on plasma-driven permeation of deuterium through nickel

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Properties of various sputter-deposited Cu–N thin films

Dao-yuan Wang; Norio Nakamine; Yasunori Hayashi

J. Vac. Sci. Technol. A 16, 2084–2092 (1998) https://doi.org/10.1116/1.581314

Abstract

View articletitled, Properties of various sputter-deposited Cu–N thin films

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Carbon nitride thin-film growth by pulsed laser deposition

Ming Y. Chen; P. Terrence Murray

J. Vac. Sci. Technol. A 16, 2093–2098 (1998) https://doi.org/10.1116/1.581315

Abstract

View articletitled, Carbon nitride thin-film growth by pulsed laser deposition

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Influence of reactor wall conditions on etch processes in inductively coupled fluorocarbon plasmas

M. Schaepkens; R. C. M. Bosch; T. E. F. M. Standaert; G. S. Oehrlein; J. M. Cook

J. Vac. Sci. Technol. A 16, 2099–2107 (1998) https://doi.org/10.1116/1.581316

Abstract

View articletitled, Influence of reactor wall conditions on etch processes in inductively coupled fluorocarbon plasmas

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Electrical impedance analysis and etch rate maximization in ${NF}_{3} /Ar$ discharges

J. G. Langan; S. W. Rynders; B. S. Felker; S. E. Beck

J. Vac. Sci. Technol. A 16, 2108–2114 (1998) https://doi.org/10.1116/1.581317

Abstract

View articletitled, Electrical impedance analysis and etch rate maximization in <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">NF</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub><mi mathvariant="normal" xmlns="">/Ar</mi></math> discharges

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Chemical downstream etching of tungsten

M. G. Blain; R. L. Jarecki; R. J. Simonson

J. Vac. Sci. Technol. A 16, 2115–2119 (1998) https://doi.org/10.1116/1.581511

Abstract

View articletitled, Chemical downstream etching of tungsten

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Electrical and optical properties of amorphous fluorocarbon films prepared by plasma polymerization of perfluoro-1,3-dimethylcyclohexane

A. Weber; R. Pöckelmann; C.-P. Klages

J. Vac. Sci. Technol. A 16, 2120–2124 (1998) https://doi.org/10.1116/1.581318

Abstract

View articletitled, Electrical and optical properties of amorphous fluorocarbon films prepared by plasma polymerization of perfluoro-1,3-dimethylcyclohexane

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Metal bonding during sputter film deposition

T. Shimatsu; R. H. Mollema; D. Monsma; E. G. Keim; J. C. Lodder

J. Vac. Sci. Technol. A 16, 2125–2131 (1998) https://doi.org/10.1116/1.581319

Abstract

View articletitled, Metal bonding during sputter film deposition

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Kinetic energy distribution of nitrogen ions in an electron cyclotron resonance plasma

Z. Y. Fan; N. Newman

J. Vac. Sci. Technol. A 16, 2132–2139 (1998) https://doi.org/10.1116/1.581320

Abstract

View articletitled, Kinetic energy distribution of nitrogen ions in an electron cyclotron resonance plasma

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Molecular beam epitaxial growth of AlN single crystalline films on Si (111) using radio-frequency plasma assisted nitrogen radical source

K. Yasutake; A. Takeuchi; H. Kakiuchi; K. Yoshii

J. Vac. Sci. Technol. A 16, 2140–2147 (1998) https://doi.org/10.1116/1.581321

Abstract

View articletitled, Molecular beam epitaxial growth of AlN single crystalline films on Si (111) using radio-frequency plasma assisted nitrogen radical source

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Distribution of species within an ethylene electron cyclotron resonance-microwave plasma

S. F. Webb; G. A. Gaddy; Rik Blumenthal

J. Vac. Sci. Technol. A 16, 2148–2152 (1998) https://doi.org/10.1116/1.581322

Abstract

View articletitled, Distribution of species within an ethylene electron cyclotron resonance-microwave plasma

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Inductively coupled plasma etch processes for NiMnSb

J. Hong; J. A. Caballero; E. S. Lambers; J. R. Childress; S. J. Pearton

J. Vac. Sci. Technol. A 16, 2153–2161 (1998) https://doi.org/10.1116/1.581323

Abstract

View articletitled, Inductively coupled plasma etch processes for NiMnSb

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Dually driven radio frequency plasma simulation with a three moment model

Heon Chang Kim; Vasilios I. Manousiouthakis

J. Vac. Sci. Technol. A 16, 2162–2172 (1998) https://doi.org/10.1116/1.581324

Abstract

View articletitled, Dually driven radio frequency plasma simulation with a three moment model

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Electron velocity distribution functions in a sputtering magnetron discharge for the $E \times B$ direction

T. E. Sheridan; M. J. Goeckner; J. Goree

J. Vac. Sci. Technol. A 16, 2173–2176 (1998) https://doi.org/10.1116/1.581325

Abstract

View articletitled, Electron velocity distribution functions in a sputtering magnetron discharge for the <math xmlns="http://www.w3.org/1998/Math/MathML"><mi mathvariant="normal" xmlns="">E</mi><mi xmlns="">×</mi><mi mathvariant="normal" xmlns="">B</mi></math> direction

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Comparison of plasma chemistries for dry etching thin film electroluminescent display materials

J. W. Lee; B. Pathangey; M. R. Davidson; P. H. Holloway; E. S. Lambers; B. Davydov; T. J. Anderson; S. J. Pearton

J. Vac. Sci. Technol. A 16, 2177–2186 (1998) https://doi.org/10.1116/1.581326

Abstract

View articletitled, Comparison of plasma chemistries for dry etching thin film electroluminescent display materials

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Experiments on the plasma assisted chemical vapor deposition of copper

Satish K. Lakshmanan; William N. Gill

J. Vac. Sci. Technol. A 16, 2187–2197 (1998) https://doi.org/10.1116/1.581327

Abstract

View articletitled, Experiments on the plasma assisted chemical vapor deposition of copper

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Determination of metal vapor ion concentration in an argon/copper plasma for ionized physical vapor deposition

J. E. Foster; A. E. Wendt; W. W. Wang; J. H. Booske

J. Vac. Sci. Technol. A 16, 2198–2203 (1998) https://doi.org/10.1116/1.581512

Abstract

View articletitled, Determination of metal vapor ion concentration in an argon/copper plasma for ionized physical vapor deposition

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Inductively coupled plasma etching of bulk 6H-SiC and thin-film SiCN in ${NF}_{3}$ chemistries

J. J. Wang; E. S. Lambers; S. J. Pearton; M. Ostling; C.-M. Zetterling; J. M. Grow; F. Ren; R. J. Shul

J. Vac. Sci. Technol. A 16, 2204–2209 (1998) https://doi.org/10.1116/1.581328

Abstract

View articletitled, Inductively coupled plasma etching of bulk 6H-SiC and thin-film SiCN in <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">NF</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub></math> chemistries

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Effect of substrate bias on the properties of $a -C:H$ films by direct current saddle-field plasma-enhanced chemical-vapor deposition

Young-Zo Yoo; HyoGun Kim; Hong-Kyu Jang; YoungGeun Jeong; Geunsik Kim

J. Vac. Sci. Technol. A 16, 2210–2214 (1998) https://doi.org/10.1116/1.581329

Abstract

View articletitled, Effect of substrate bias on the properties of <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">a</mi><mi mathvariant="normal" xmlns="">-C:H</mi></math> films by direct current saddle-field plasma-enhanced chemical-vapor deposition

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Role of oxygen in ion-enhanced etching of poly-Si and ${WSi}_{x}$ with chlorine

Gowri P. Kota; J. W. Coburn; David B. Graves

J. Vac. Sci. Technol. A 16, 2215–2221 (1998) https://doi.org/10.1116/1.581330

Abstract

View articletitled, Role of oxygen in ion-enhanced etching of poly-Si and <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">WSi</mi><mrow><mi>x</mi></mrow></msub></math> with chlorine

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Surface productions of CF and ${CF}_{2}$ radicals in high-density fluorocarbon plasmas

C. Suzuki; K. Sasaki; K. Kadota

J. Vac. Sci. Technol. A 16, 2222–2226 (1998) https://doi.org/10.1116/1.581331

Abstract

View articletitled, Surface productions of CF and <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">CF</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math> radicals in high-density fluorocarbon plasmas

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Simulations of ${BCl}_{3} {/Cl}_{2} /Ar$ plasmas with comparisons to diagnostic data

Ellen Meeks; Pauline Ho; Aili Ting; Richard J. Buss

J. Vac. Sci. Technol. A 16, 2227–2239 (1998) https://doi.org/10.1116/1.581332

Abstract

View articletitled, Simulations of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">BCl</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">/Cl</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><mi mathvariant="normal" xmlns="">/Ar</mi></math> plasmas with comparisons to diagnostic data

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Role of the bias voltage during the deposition of thin tin oxide films by plasma assisted chemical vapor deposition

F. Arefi-Khonsari; F. Hellegouarc’h; J. Amouroux

J. Vac. Sci. Technol. A 16, 2240–2244 (1998) https://doi.org/10.1116/1.581333

Abstract

View articletitled, Role of the bias voltage during the deposition of thin tin oxide films by plasma assisted chemical vapor deposition

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Challenges in electron cyclotron resonance plasma etching of ${LiNbO}_{3}$ surface for fabrication of ridge optical waveguides

Naoki Mitsugi; Hirotoshi Nagata; Kaori Shima; Masumi Tamai

J. Vac. Sci. Technol. A 16, 2245–2251 (1998) https://doi.org/10.1116/1.581334

Abstract

View articletitled, Challenges in electron cyclotron resonance plasma etching of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">LiNbO</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub></math> surface for fabrication of ridge optical waveguides

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Synchrotron radiation induced SiC formation on Si substrate employing methanol and H radical

M. Ikeda; M. Inayoshi; M. Hori; T. Goto; M. Hiramatsu; A. Hiraya

J. Vac. Sci. Technol. A 16, 2252–2256 (1998) https://doi.org/10.1116/1.581335

Abstract

View articletitled, Synchrotron radiation induced SiC formation on Si substrate employing methanol and H radical

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Application of target factor analysis and linear least squares fitting to extracting chemical information from Auger depth profiles of a Mo/Si thin multilayer system

T. Morohashi; T. Hoshi; H. Nikaido; M. Kudo

J. Vac. Sci. Technol. A 16, 2257–2260 (1998) https://doi.org/10.1116/1.581336

Abstract

View articletitled, Application of target factor analysis and linear least squares fitting to extracting chemical information from Auger depth profiles of a Mo/Si thin multilayer system

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MgO(100) surface relaxation by symmetrized automated tensor low energy electron diffraction analysis

D. Ferry; J. Suzanne; V. Panella; A. Barbieri; M. A. Van Hove; J.-P. Bibérian

J. Vac. Sci. Technol. A 16, 2261–2266 (1998) https://doi.org/10.1116/1.581337

Abstract

View articletitled, MgO(100) surface relaxation by symmetrized automated tensor low energy electron diffraction analysis

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Studying low-pressure chemical vapor deposition a-Si:B alloys by optical spectroscopy

G.-R. Yang; Y.-P. Zhao; B. Y. Tong

J. Vac. Sci. Technol. A 16, 2267–2271 (1998) https://doi.org/10.1116/1.581338

Abstract

View articletitled, Studying low-pressure chemical vapor deposition a-Si:B alloys by optical spectroscopy

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Defect-associated photoluminescence and rapid thermal annealing effect on ${SiO}_{2}$ films grown in the plasma phase

Keunjoo Kim

J. Vac. Sci. Technol. A 16, 2272–2276 (1998) https://doi.org/10.1116/1.581339

Abstract

View articletitled, Defect-associated photoluminescence and rapid thermal annealing effect on <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SiO</mi><mrow><mn>2</mn></mrow></msub></math> films grown in the plasma phase

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High-quality Fe(001) single crystal films on MgO(001) substrates for electron spectroscopies

R. Bertacco; S. De Rossi; F. Ciccacci

J. Vac. Sci. Technol. A 16, 2277–2280 (1998) https://doi.org/10.1116/1.581340

Abstract

View articletitled, High-quality Fe(001) single crystal films on MgO(001) substrates for electron spectroscopies

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Microstructural characterization of ion assisted ${SiO}_{2}$ thin films by visible and infrared ellipsometry

A. Brunet-Bruneau; D. Souche; S. Fisson; V. Nguyen Van; G. Vuye; F. Abeles; J. Rivory

J. Vac. Sci. Technol. A 16, 2281–2286 (1998) https://doi.org/10.1116/1.581341

Abstract

View articletitled, Microstructural characterization of ion assisted <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SiO</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math> thin films by visible and infrared ellipsometry

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Optical properties of zirconia–yttria single crystal compounds by reflection electron energy loss spectroscopy

F. Yubero; J. P. Espinós; A. R. González-Elipe

J. Vac. Sci. Technol. A 16, 2287–2291 (1998) https://doi.org/10.1116/1.581342

Abstract

View articletitled, Optical properties of zirconia–yttria single crystal compounds by reflection electron energy loss spectroscopy

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Effect of fractal crystallization on the depositing sequence of a Pd/Ge thin film system

Chen Zhiwen; Zhang Shuyuan; Tan Shun; Hou Jianguo; Zhang Yuheng

J. Vac. Sci. Technol. A 16, 2292–2294 (1998) https://doi.org/10.1116/1.581343

Abstract

View articletitled, Effect of fractal crystallization on the depositing sequence of a Pd/Ge thin film system

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Delamination mechanism in relation to adhesion of cubic boron nitride

Ig-Hyeon Kim; Seon-Hyo Kim; Kyoung-Bo Kim

J. Vac. Sci. Technol. A 16, 2295–2299 (1998) https://doi.org/10.1116/1.581412

Abstract

View articletitled, Delamination mechanism in relation to adhesion of cubic boron nitride

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Electrical characterization of the $p- {Hg}_{1−x} {Zn}_{x} Te$ interface after anodic sulfidization treatments

O. Rousière; D. Lemoine; A. Quémerais; R. Granger; S. Rolland; R. Triboulet

J. Vac. Sci. Technol. A 16, 2300–2308 (1998) https://doi.org/10.1116/1.581344

Abstract

View articletitled, Electrical characterization of the <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">p-</mi><msub xmlns=""><mi mathvariant="normal">Hg</mi><mrow><mtext>1−x</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Zn</mi><mrow><mi>x</mi></mrow></msub><mi mathvariant="normal" xmlns="">Te</mi></math> interface after anodic sulfidization treatments

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Operation and oxidation of thermionic dispenser cathodes studied by high resolution photoemission

P. Bailey; B. C. C. Cowie; D. Norman

J. Vac. Sci. Technol. A 16, 2309–2317 (1998) https://doi.org/10.1116/1.581345

Abstract

View articletitled, Operation and oxidation of thermionic dispenser cathodes studied by high resolution photoemission

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Soft x-ray photoelectron diffraction study of epitaxial InGaAs/GaAs(001)

M. G. Proietti; S. Turchini; J. Garcı́a; M. C. Arsenio; C. Casado; F. Martelli; T. Prosperi

J. Vac. Sci. Technol. A 16, 2318–2325 (1998) https://doi.org/10.1116/1.581346

Abstract

View articletitled, Soft x-ray photoelectron diffraction study of epitaxial InGaAs/GaAs(001)

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Growth and characterization of epitaxial fcc Fe wedges on diamond (100)

Dongqi Li; D. J. Keavney; J. Pearson; J. S. Jiang; S. D. Bader; W. Keune

J. Vac. Sci. Technol. A 16, 2326–2329 (1998) https://doi.org/10.1116/1.581347

Abstract

View articletitled, Growth and characterization of epitaxial fcc Fe wedges on diamond (100)

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Metrology of sub-0.5 μm silicon epitaxial films

Weize Chen; Rafael Reif

J. Vac. Sci. Technol. A 16, 2330–2336 (1998) https://doi.org/10.1116/1.581348

Abstract

View articletitled, Metrology of sub-0.5 μm silicon epitaxial films

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Structural characteristics and hardness of zirconium carbide films prepared by tri-ion beam-assisted deposition

Xiao-Ming He; Li Shu; Hai-Bo Li; Heng-De Li; S.-T. Lee

J. Vac. Sci. Technol. A 16, 2337–2344 (1998) https://doi.org/10.1116/1.581349

Abstract

View articletitled, Structural characteristics and hardness of zirconium carbide films prepared by tri-ion beam-assisted deposition

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Improved optical scheme for nonintrusive vapor density monitoring by atomic absorption spectroscopy

A. Ray; A. Majumdar

J. Vac. Sci. Technol. A 16, 2345–2349 (1998) https://doi.org/10.1116/1.581350

Abstract

View articletitled, Improved optical scheme for nonintrusive vapor density monitoring by atomic absorption spectroscopy

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Photoreflectance spectroscopy investigation of two-dimensional cesium metallic clusters on GaAs(100)

D. Paget; B. Kierren; R. Houdré

J. Vac. Sci. Technol. A 16, 2350–2359 (1998) https://doi.org/10.1116/1.581351

Abstract

View articletitled, Photoreflectance spectroscopy investigation of two-dimensional cesium metallic clusters on GaAs(100)

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Piezoelectric, dielectric, and interfacial properties of aluminum nitride films

D. Liufu; K. C. Kao

J. Vac. Sci. Technol. A 16, 2360–2366 (1998) https://doi.org/10.1116/1.581352

Abstract

View articletitled, Piezoelectric, dielectric, and interfacial properties of aluminum nitride films

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Onset of oscillations during growth on a vicinal surface

S. Harris

J. Vac. Sci. Technol. A 16, 2367–2371 (1998) https://doi.org/10.1116/1.581353

Abstract

View articletitled, Onset of oscillations during growth on a vicinal surface

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Preparation of nearly oxygen-free AlN thin films by pulsed laser deposition

Maoqi He; Naiqun Cheng; Peizhen Zhou; Hideo Okabe; Joshua B. Halpern

J. Vac. Sci. Technol. A 16, 2372–2375 (1998) https://doi.org/10.1116/1.581354

Abstract

View articletitled, Preparation of nearly oxygen-free AlN thin films by pulsed laser deposition

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Molecular beam epitaxy and interface reactions of layered GaSe growth on sapphire (0001)

Scott Chegwidden; Zurong Dai; Marjorie A. Olmstead; Fumio S. Ohuchi

J. Vac. Sci. Technol. A 16, 2376–2380 (1998) https://doi.org/10.1116/1.581355

Abstract

View articletitled, Molecular beam epitaxy and interface reactions of layered GaSe growth on sapphire (0001)

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Thickness distribution in pulsed laser deposited PZT films

M. Tyunina; J. Wittborn; C. Björmander; K. V. Rao

J. Vac. Sci. Technol. A 16, 2381–2384 (1998) https://doi.org/10.1116/1.581356

Abstract

View articletitled, Thickness distribution in pulsed laser deposited PZT films

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Growth of SiC films via $C_{60}$ precursors and a model for the profile development of the silicon underlayer

Joshua A. Levinson; Alex V. Hamza; Eric S. G. Shaqfeh; Mehdi Balooch

J. Vac. Sci. Technol. A 16, 2385–2394 (1998) https://doi.org/10.1116/1.581357

Abstract

View articletitled, Growth of SiC films via <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">C</mi><mrow><mi mathvariant="normal">60</mi></mrow></msub></math> precursors and a model for the profile development of the silicon underlayer

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Growth and characterization of potassium-doped superfulleride thin films

Nathan Swami; Yujian You; Mark E. Thompson; Bruce E. Koel

J. Vac. Sci. Technol. A 16, 2395–2399 (1998) https://doi.org/10.1116/1.581358

Abstract

View articletitled, Growth and characterization of potassium-doped superfulleride thin films

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Influence of sticking coefficients on the behavior of sputtered atoms in an argon glow discharge: Modeling and comparison with experiment

A. Bogaerts; J. Naylor; M. Hatcher; W. J. Jones; R. Mason

J. Vac. Sci. Technol. A 16, 2400–2410 (1998) https://doi.org/10.1116/1.581359

Abstract

View articletitled, Influence of sticking coefficients on the behavior of sputtered atoms in an argon glow discharge: Modeling and comparison with experiment

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Microstructure and electronic properties of the refractory semiconductor ScN grown on MgO(001) by ultra-high-vacuum reactive magnetron sputter deposition

D. Gall; I. Petrov; L. D. Madsen; J.-E. Sundgren; J. E. Greene

J. Vac. Sci. Technol. A 16, 2411–2417 (1998) https://doi.org/10.1116/1.581360

Abstract

View articletitled, Microstructure and electronic properties of the refractory semiconductor ScN grown on MgO(001) by ultra-high-vacuum reactive magnetron sputter deposition

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Quantitative measurement of nodule formation in W–Ti sputtering

Chi-Fung Lo; Darryl Draper

J. Vac. Sci. Technol. A 16, 2418–2422 (1998) https://doi.org/10.1116/1.581361

Abstract

View articletitled, Quantitative measurement of nodule formation in W–Ti sputtering

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Interfacial reaction effects in the growth of MgO on GaAs(001) by reactive molecular beam epitaxy

S. W. Robey

J. Vac. Sci. Technol. A 16, 2423–2428 (1998) https://doi.org/10.1116/1.581413

Abstract

View articletitled, Interfacial reaction effects in the growth of MgO on GaAs(001) by reactive molecular beam epitaxy

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Structural coherence of sputtered ${Ni}_{3}$ Al/Ni multilayers

S. Tixier; P. Böni; H. Van Swygenhoven

J. Vac. Sci. Technol. A 16, 2429–2436 (1998) https://doi.org/10.1116/1.581362

Abstract

View articletitled, Structural coherence of sputtered <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Ni</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub></math>Al/Ni multilayers

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Structural change and heteroepitaxy induced by rapid thermal annealing of ${CaF}_{2}$ films on Si(111)

N. Mattoso; D. H. Mosca; W. H. Schreiner; I. Mazzaro; S. R. Teixeira; W. A. A. Macedo; M. D. Martins

J. Vac. Sci. Technol. A 16, 2437–2441 (1998) https://doi.org/10.1116/1.581363

Abstract

View articletitled, Structural change and heteroepitaxy induced by rapid thermal annealing of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">CaF</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math> films on Si(111)

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${PbTiO}_{3}$ buffer layer effects on the structural and electrical properties of ${Pb(Zr, Ti)O}_{3}$ thin films grown by sputtering on silicon substrates

G. Velu; T. Haccart; B. Jaber; D. Rèmiens

J. Vac. Sci. Technol. A 16, 2442–2447 (1998) https://doi.org/10.1116/1.581364

Abstract

View articletitled, <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">PbTiO</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub></math> buffer layer effects on the structural and electrical properties of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Pb(Zr, Ti)O</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub></math> thin films grown by sputtering on silicon substrates

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Control of structural, electrical properties of $({Ba,Sr)TiO}_{3} {/RuO}_{2}$ thin films by the application of amorphous $({Ba,Sr)TiO}_{3}$ layer

Su-Hyon Paek; Kong-Soo Lee; Jin-Yong Seong; Duck-Kyun Choi; Boum-Seock Kim; Chi-Sun Park

J. Vac. Sci. Technol. A 16, 2448–2453 (1998) https://doi.org/10.1116/1.581365

Abstract

View articletitled, Control of structural, electrical properties of <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">(</mi><msub xmlns=""><mi mathvariant="normal">Ba,Sr)TiO</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">/RuO</mi><mrow><mn>2</mn></mrow></msub></math> thin films by the application of amorphous <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">(</mi><msub xmlns=""><mi mathvariant="normal">Ba,Sr)TiO</mi><mrow><mn>3</mn></mrow></msub></math> layer

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Consequences of three-dimensional physical and electromagnetic structures on dust particle trapping in high plasma density material processing discharges

Helen H. Hwang; Eric R. Keiter; Mark J. Kushner

J. Vac. Sci. Technol. A 16, 2454–2462 (1998) https://doi.org/10.1116/1.581366

Abstract

View articletitled, Consequences of three-dimensional physical and electromagnetic structures on dust particle trapping in high plasma density material processing discharges

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Graphite growth influenced by crystallographic faces of Ni films

Masako Yudasaka; Rie Kikuchi; Yoshimasa Ohki; Susumu Yoshimura

J. Vac. Sci. Technol. A 16, 2463–2465 (1998) https://doi.org/10.1116/1.581367

Abstract

View articletitled, Graphite growth influenced by crystallographic faces of Ni films

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Atomic force microscopy and ellipsometry study of the nucleation and growth mechanism of polycrystalline silicon films on silicon dioxide

C. Basa; M. Tinani; E. A. Irene

J. Vac. Sci. Technol. A 16, 2466–2479 (1998) https://doi.org/10.1116/1.581368

Abstract

View articletitled, Atomic force microscopy and ellipsometry study of the nucleation and growth mechanism of polycrystalline silicon films on silicon dioxide

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Pulsed electron-beam technology for surface modification of metallic materials

D. I. Proskurovsky; V. P. Rotshtein; G. E. Ozur; A. B. Markov; D. S. Nazarov; V. A. Shulov; Yu. F. Ivanov; R. G. Buchheit

J. Vac. Sci. Technol. A 16, 2480–2488 (1998) https://doi.org/10.1116/1.581369

Abstract

View articletitled, Pulsed electron-beam technology for surface modification of metallic materials

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Influences of ion energy on morphology and preferred orientation of chromium thin films prepared by ion beam and vapor deposition

Naoto Kuratani; Akinori Ebe; Kiyoshi Ogata

J. Vac. Sci. Technol. A 16, 2489–2494 (1998) https://doi.org/10.1116/1.581370

Abstract

View articletitled, Influences of ion energy on morphology and preferred orientation of chromium thin films prepared by ion beam and vapor deposition

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In situ growth of evaporated ${TiO}_{2}$ thin films using oxygen radicals: Effect of deposition temperature

J. V. Grahn; M. Linder; E. Fredriksson

J. Vac. Sci. Technol. A 16, 2495–2500 (1998) https://doi.org/10.1116/1.581371

Abstract

View articletitled, In situ growth of evaporated <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">TiO</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math> thin films using oxygen radicals: Effect of deposition temperature

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Preparation of (001) cube textured ${CeO}_{2}$ buffer layers on rolling-textured substrates by ion beam assisted pulsed laser deposition

X. M. Xiong; R. P. Wang; Y. L. Zhou; X. X. Guo; H. B. Lu; S. H. Pan; G. Z. Yang; C. F. Liu; X. Wu; X. P. Zhang; L. Zhou

J. Vac. Sci. Technol. A 16, 2501–2504 (1998) https://doi.org/10.1116/1.581372

Abstract

View articletitled, Preparation of (001) cube textured <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">CeO</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math> buffer layers on rolling-textured substrates by ion beam assisted pulsed laser deposition

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Effect of bismuth on the ferroelectric properties of ${SrBi}_{2} {Ta}_{2} O_{9}$ thin films deposited on ${Pt/SiO}_{2} /Si$ by a modified radio-frequency magnetron sputtering technique

Cheol-Hoon Yang; Soon-Gil Yoon

J. Vac. Sci. Technol. A 16, 2505–2509 (1998) https://doi.org/10.1116/1.581373

Abstract

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Nitridation of vacuum evaporated molybdenum films in $H_{2} {/N}_{2}$ mixtures

Takao Amazawa; Hideo Oikawa

J. Vac. Sci. Technol. A 16, 2510–2516 (1998) https://doi.org/10.1116/1.581374

Abstract

View articletitled, Nitridation of vacuum evaporated molybdenum films in <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">H</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">/N</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math> mixtures

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Surface characterization of thin films of tetrathiofulvalene 7,7,8,8-tetracyano- $p$ -quinodimethane evaporated on NaCl(001)

J. Fraxedas; J. Caro; A. Figueras; P. Gorostiza; F. Sanz

J. Vac. Sci. Technol. A 16, 2517–2523 (1998) https://doi.org/10.1116/1.581375

Abstract

View articletitled, Surface characterization of thin films of tetrathiofulvalene 7,7,8,8-tetracyano-<math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">p</mi></math>-quinodimethane evaporated on NaCl(001)

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Helium sticking coefficient on cryopanels coated by activated carbon

I. Özdemir; D. Perinic

J. Vac. Sci. Technol. A 16, 2524–2527 (1998) https://doi.org/10.1116/1.581376

Abstract

View articletitled, Helium sticking coefficient on cryopanels coated by activated carbon

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Chemical and photochemical processes in sulfide passivation of GaAs(100): In situ optical study and photoemission analysis

V. L. Berkovits; V. P. Ulin; D. Paget; J. E. Bonnet; T. V. L’vova; P. Chiaradia; V. M. Lantratov

J. Vac. Sci. Technol. A 16, 2528–2538 (1998) https://doi.org/10.1116/1.581377

Abstract

View articletitled, Chemical and photochemical processes in sulfide passivation of GaAs(100): In situ optical study and photoemission analysis

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Surface cleaning with hydrogen plasma for low-defect-density ZnSe homoepitaxial growth

Tetsuichiro Ohno; Akira Ohki; Takashi Matsuoka

J. Vac. Sci. Technol. A 16, 2539–2545 (1998) https://doi.org/10.1116/1.581378

Abstract

View articletitled, Surface cleaning with hydrogen plasma for low-defect-density ZnSe homoepitaxial growth

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Chemical alteration of the native oxide layer on InP(111) by exposure to hyperthermal atomic hydrogen

John T. Wolan; Gar B. Hoflund

J. Vac. Sci. Technol. A 16, 2546–2552 (1998) https://doi.org/10.1116/1.581379

Abstract

View articletitled, Chemical alteration of the native oxide layer on InP(111) by exposure to hyperthermal atomic hydrogen

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Diamond-like bonds in amorphous hydrogenated carbon films induced by x-ray irradiation

Fumio Sato; Nobuo Saito; Yoshiyuki Hirano; Ahalapitiya H. Jayatissa; Kuniharu Takizawa; Seiji Kawado; Takanori Kato; Hiroshi Sugiyama; Yasushi Kagoshima; Masami Ando

J. Vac. Sci. Technol. A 16, 2553–2555 (1998) https://doi.org/10.1116/1.581380

Abstract

View articletitled, Diamond-like bonds in amorphous hydrogenated carbon films induced by x-ray irradiation

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Use of a new type of atomic hydrogen source for cleaning and hydrogenation of compound semiconductive materials

V. A. Kagadei; D. I. Proskurovsky

J. Vac. Sci. Technol. A 16, 2556–2561 (1998) https://doi.org/10.1116/1.581381

Abstract

View articletitled, Use of a new type of atomic hydrogen source for cleaning and hydrogenation of compound semiconductive materials

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Synthesis and structure of Al clusters supported on ${TiO}_{2} (110):$ A scanning tunneling microscopy study

X. Lai; C. Xu; D. W. Goodman

J. Vac. Sci. Technol. A 16, 2562–2566 (1998) https://doi.org/10.1116/1.581382

Abstract

View articletitled, Synthesis and structure of Al clusters supported on <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">TiO</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><mtext xmlns="">(110):</mtext></math> A scanning tunneling microscopy study

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Surface modification of (100) $n$ -GaAs by radio frequency hydrogen plasmas

J. L. Sullivan; S. O. Saied; R. Layberry; M. J. Cardwell

J. Vac. Sci. Technol. A 16, 2567–2571 (1998) https://doi.org/10.1116/1.581383

Abstract

View articletitled, Surface modification of (100) <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">n</mi></math>-GaAs by radio frequency hydrogen plasmas

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Observation of adsorption and reaction of ${NH}_{3}$ on crystalline ${Al}_{2} O_{3}$ under steady-state conditions using external-reflection infrared spectroscopy

V. M. Bermudez

J. Vac. Sci. Technol. A 16, 2572–2580 (1998) https://doi.org/10.1116/1.581384

Abstract

View articletitled, Observation of adsorption and reaction of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">NH</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub></math> on crystalline <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Al</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub></math> under steady-state conditions using external-reflection infrared spectroscopy

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Temperature-programmed desorption study of the etching of Ni(110) with 2,4-pentanedione

H. L. Nigg; R. I. Masel

J. Vac. Sci. Technol. A 16, 2581–2584 (1998) https://doi.org/10.1116/1.581385

Abstract

View articletitled, Temperature-programmed desorption study of the etching of Ni(110) with 2,4-pentanedione

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Heterogeneous reactions of ${NO}_{2}$ on NaCl and ${Al}_{2} O_{3}$ particles

A. L. Goodman; T. M. Miller; V. H. Grassian

J. Vac. Sci. Technol. A 16, 2585–2590 (1998) https://doi.org/10.1116/1.581386

Abstract

View articletitled, Heterogeneous reactions of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">NO</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math> on NaCl and <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Al</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub></math> particles

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Electrical properties of ${(Pb,La)TiO}_{3}$ thin films deposited by low pressure metal-organic chemical vapor deposition using solid delivery system

Ju Cheol Shin; Jong Myeong Lee; Suk-Kyoung Hong; Ho Jin Cho; Kwon Seok Kim; Cheol Seong Hwang; Hyeong Joon Kim

J. Vac. Sci. Technol. A 16, 2591–2594 (1998) https://doi.org/10.1116/1.581387

Abstract

View articletitled, Electrical properties of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">(Pb,La)TiO</mi><mrow><mn>3</mn></mrow></msub></math> thin films deposited by low pressure metal-organic chemical vapor deposition using solid delivery system

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Characteristic losses in metals: Al, Be, and Ni

H. H. Madden; R. Landers; G. G. Kleiman; D. M. Zehner

J. Vac. Sci. Technol. A 16, 2595–2603 (1998) https://doi.org/10.1116/1.581388

Abstract

View articletitled, Characteristic losses in metals: Al, Be, and Ni

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Copper diffusion in amorphous germanium

J. P. Doyle; A. Yu. Kuznetsov; B. G. Svensson

J. Vac. Sci. Technol. A 16, 2604–2607 (1998) https://doi.org/10.1116/1.581389

Abstract

View articletitled, Copper diffusion in amorphous germanium

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Thermally induced processes in thin layers, obtained by coevaporation of ${TeO}_{2}$ and Sn

I. Podolesheva; V. Platikanova; I. Konstantinov; V. Dimov; M. Tarassov

J. Vac. Sci. Technol. A 16, 2608–2613 (1998) https://doi.org/10.1116/1.581390

Abstract

View articletitled, Thermally induced processes in thin layers, obtained by coevaporation of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">TeO</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math> and Sn

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General technological modeling method for the design of transparent conductive ${In}_{2} O_{3}$ electrodes

G. Golan; A. Axelevitch; E. Rabinovitch

J. Vac. Sci. Technol. A 16, 2614–2618 (1998) https://doi.org/10.1116/1.581391

Abstract

View articletitled, General technological modeling method for the design of transparent conductive <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">In</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub></math> electrodes

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Boron incorporation with and without atomic hydrogen during the growth of doped layers on Si(100)

Conrad Silvestre; Phillip Thompson; Glenn Jernigan; David Simons

J. Vac. Sci. Technol. A 16, 2619–2624 (1998) https://doi.org/10.1116/1.581414

Abstract

View articletitled, Boron incorporation with and without atomic hydrogen during the growth of doped layers on Si(100)

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Evaluation of the ion bombardment energy for growing diamondlike carbon films in an electron cyclotron resonance plasma enhanced chemical vapor deposition

Dae-Hwan Kang; Seung-Chul Ha; Ki-Bum Kim; Seok-Hong Min

J. Vac. Sci. Technol. A 16, 2625–2631 (1998) https://doi.org/10.1116/1.581392

Abstract

View articletitled, Evaluation of the ion bombardment energy for growing diamondlike carbon films in an electron cyclotron resonance plasma enhanced chemical vapor deposition

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Study of the dynamics of point defects at Si(111)-7×7 surfaces with scanning tunneling microscopy

Ing-Shouh Hwang; Rong-Li Lo; Tien T. Tsong

J. Vac. Sci. Technol. A 16, 2632–2640 (1998) https://doi.org/10.1116/1.581393

Abstract

View articletitled, Study of the dynamics of point defects at Si(111)-7×7 surfaces with scanning tunneling microscopy

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Efficiency improvement in low temperature metal-oxide-semiconductor solar cells by thin metal film deposition on photon receiving area

Kuo-Chung Lee; Jenn-Gwo Hwu

J. Vac. Sci. Technol. A 16, 2641–2645 (1998) https://doi.org/10.1116/1.581394

Abstract

View articletitled, Efficiency improvement in low temperature metal-oxide-semiconductor solar cells by thin metal film deposition on photon receiving area

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Improved formation of silicon dioxide films in liquid phase deposition

C. J. Huang; M. P. Houng; Y. H. Wang; N. F. Wang; Jiann-Ruey Chen

J. Vac. Sci. Technol. A 16, 2646–2652 (1998) https://doi.org/10.1116/1.581395

Abstract

View articletitled, Improved formation of silicon dioxide films in liquid phase deposition

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Ballistic electron emission microscopy studies on ${Au/CaF}_{2} /n- Si (111)$ heterostructures

Touru Sumiya; Tadao Miura; Shun-ichiro Tanaka

J. Vac. Sci. Technol. A 16, 2653–2662 (1998) https://doi.org/10.1116/1.581396

Abstract

View articletitled, Ballistic electron emission microscopy studies on <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Au/CaF</mi><mrow><mn>2</mn></mrow></msub><mi xmlns="">/n-</mi><mi mathvariant="normal" xmlns="">Si</mi><mtext xmlns="">(111)</mtext></math> heterostructures

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Analysis of GaAs properties under biaxial tensile stress

Ki Soo Kim; Gye Mo Yang; Hyung Jae Lee

J. Vac. Sci. Technol. A 16, 2663–2667 (1998) https://doi.org/10.1116/1.581397

Abstract

View articletitled, Analysis of GaAs properties under biaxial tensile stress

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Structure engineering for hillock-free pure aluminum sputter deposition for gate and source line fabrication in active-matrix liquid crystal displays

Apostolos T. Voutsas; Yoshi Hibino; Rajiv Pethe; Ernest Demaray

J. Vac. Sci. Technol. A 16, 2668–2677 (1998) https://doi.org/10.1116/1.581398

Abstract

View articletitled, Structure engineering for hillock-free pure aluminum sputter deposition for gate and source line fabrication in active-matrix liquid crystal displays

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Control of performance and stability of thin film diodes using chromium nitride contacts

B. Mc Garvey; J. E. Curran; R. A. Ford; I. G. Gale; J. Hewett; M. Theobald

J. Vac. Sci. Technol. A 16, 2678–2682 (1998) https://doi.org/10.1116/1.581399

Abstract

View articletitled, Control of performance and stability of thin film diodes using chromium nitride contacts

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Hydrogen passivation at the Al/H:Si(111)-(1×1) interface

C. Grupp; A. Taleb-Ibrahimi

J. Vac. Sci. Technol. A 16, 2683–2686 (1998) https://doi.org/10.1116/1.581400

Abstract

View articletitled, Hydrogen passivation at the Al/H:Si(111)-(1×1) interface

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Mapping local susceptibility using a scanning coaxial write/read head

Valter Ström; K. V. Rao

J. Vac. Sci. Technol. A 16, 2687–2692 (1998) https://doi.org/10.1116/1.581401

Abstract

View articletitled, Mapping local susceptibility using a scanning coaxial write/read head

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Acquisition of clean ultrahigh vacuum using chemical treatment

K. Tatenuma; K. Uchida; T. Itoh; T. Momose; H. Ishimaru

J. Vac. Sci. Technol. A 16, 2693–2697 (1998) https://doi.org/10.1116/1.581402

Abstract

View articletitled, Acquisition of clean ultrahigh vacuum using chemical treatment

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Collision cell containment of dense gas targets for high vacuum applications

Andrew D. Ketsdever; E. P. Muntz

J. Vac. Sci. Technol. A 16, 2698–2702 (1998) https://doi.org/10.1116/1.581403

Abstract

View articletitled, Collision cell containment of dense gas targets for high vacuum applications

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Improvement of turbomolecular pumps for ultraclean, low-pressure, and high-gas-flow processing

Kazuhide Ino; Katsuyuki Sekine; Tadashi Shibata; Tadahiro Ohmi; Yasushi Maejima

J. Vac. Sci. Technol. A 16, 2703–2710 (1998) https://doi.org/10.1116/1.581404

Abstract

View articletitled, Improvement of turbomolecular pumps for ultraclean, low-pressure, and high-gas-flow processing

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Achievement of extremely high vacuum in an electrolytically polished stainless steel vacuum chamber

Shu Watanabe; Satoshi Kurokouchi; Shigeki Kato; Masakazu Aono

J. Vac. Sci. Technol. A 16, 2711–2717 (1998) https://doi.org/10.1116/1.581405

Abstract

View articletitled, Achievement of extremely high vacuum in an electrolytically polished stainless steel vacuum chamber

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Inner surface modification of 40Cr steel cylinder with a new plasma source ion implantation method

Mu Sun; Si-ze Yang; Wen-qing Yao

J. Vac. Sci. Technol. A 16, 2718–2721 (1998) https://doi.org/10.1116/1.581406

Abstract

View articletitled, Inner surface modification of 40Cr steel cylinder with a new plasma source ion implantation method

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Use of 2H-heptafluoropropane, 1-iodoheptafluoropropane, and 2-iodoheptafluoropropane for a high aspect ratio via etch in a high density plasma etch tool

Simon Karecki; Laura Pruette; Rafael Reif; Laurie Beu; Terry Sparks; Victor Vartanian

J. Vac. Sci. Technol. A 16, 2722–2724 (1998) https://doi.org/10.1116/1.581415

Abstract

View articletitled, Use of 2H-heptafluoropropane, 1-iodoheptafluoropropane, and 2-iodoheptafluoropropane for a high aspect ratio via etch in a high density plasma etch tool

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Heteroepitaxial growth of ${RuO}_{2}$ thin films on ${α-Al}_{2} O_{3}$ substrates with ${CeO}_{2}$ buffer layers by pulsed laser deposition

C. L. Chen; Q. X. Jia; Y. C. Lu; J. L. Smith; T. E. Mitchell

J. Vac. Sci. Technol. A 16, 2725–2727 (1998) https://doi.org/10.1116/1.581407

Abstract

View articletitled, Heteroepitaxial growth of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">RuO</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math> thin films on <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">α-Al</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub></math> substrates with <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">CeO</mi><mrow><mn>2</mn></mrow></msub></math> buffer layers by pulsed laser deposition

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Decay length of the pressure dependent deposition rate for magnetron sputtering

Tilo P. Drüsedau; Mirko Löhmann; Bernd Garke

J. Vac. Sci. Technol. A 16, 2728–2732 (1998) https://doi.org/10.1116/1.581408

Abstract

View articletitled, Decay length of the pressure dependent deposition rate for magnetron sputtering

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Thermodynamic theory for preferred orientation in carbon and cubic BN

D. R. McKenzie; M. M. M. Bilek

J. Vac. Sci. Technol. A 16, 2733–2734 (1998) https://doi.org/10.1116/1.581409

Abstract

View articletitled, Thermodynamic theory for preferred orientation in carbon and cubic BN

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Rapid thermal annealing of reactive sputtered tantalum oxide films on GaAs in $N_{2} O$ atmosphere

G. Eftekhari

J. Vac. Sci. Technol. A 16, 2735–2737 (1998) https://doi.org/10.1116/1.581410

Abstract

View articletitled, Rapid thermal annealing of reactive sputtered tantalum oxide films on GaAs in <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">N</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><mi mathvariant="normal" xmlns="">O</mi></math> atmosphere

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High-performance x-ray detector for appearance potential spectroscopy

G. Rangelov; K. Ertl; F. Passek; M. Vonbank; S. Bassen; J. Reinmuth; M. Donath; V. Dose

J. Vac. Sci. Technol. A 16, 2738–2741 (1998) https://doi.org/10.1116/1.581416

Abstract

View articletitled, High-performance x-ray detector for appearance potential spectroscopy

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Erratum: “Silicon oxycarbide formation on SiC surfaces and the $SiC / {SiO}_{2}$ interface” [J. Vac. Sci. Technol. A 15, 1597 (1997)]

C. Önneby; C. G. Pantano

J. Vac. Sci. Technol. A 16, 2742–2743 (1998) https://doi.org/10.1116/1.581411

View articletitled, Erratum: “Silicon oxycarbide formation on SiC surfaces and the <math xmlns="http://www.w3.org/1998/Math/MathML"><mi mathvariant="normal" xmlns="">SiC</mi><mi xmlns="">/</mi><msub xmlns=""><mi mathvariant="normal">SiO</mi><mrow><mn>2</mn></mrow></msub></math> interface” [J. Vac. Sci. Technol. A 15, 1597 (1997)]

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