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Field emission characteristics of patterned free-standing diamond films
J. Vac. Sci. Technol. A 16, 922–925 (1998)
https://doi.org/10.1116/1.581212
Surface and intergallery catalytic properties of Cu(II)-exchanged hectorite: A scanning force microscope study
Timothy L. Porter; Kevin Manygoats; Michelle Bradley; Michael P. Eastman; Benjamin P. Reynolds; Amy E. Votava; Michael E. Hagerman
J. Vac. Sci. Technol. A 16, 926–931 (1998)
https://doi.org/10.1116/1.581213
Comparison of the initial oxidation of polycrystalline indium and ultrathin deposits of indium on the Au (111) surface
J. Vac. Sci. Technol. A 16, 937–942 (1998)
https://doi.org/10.1116/1.581215
Adsorption of oxygen on Pd(111): Precursor kinetics and coverage-dependent sticking
J. Vac. Sci. Technol. A 16, 943–947 (1998)
https://doi.org/10.1116/1.581216
Atomic force microscopy and scanning tunneling microscopy/spectroscopy investigations of molybdenum ditellurides
J. Vac. Sci. Technol. A 16, 951–955 (1998)
https://doi.org/10.1116/1.581218
Electronic structure calculations of small molecule adsorbates on (110) and (100)
J. Vac. Sci. Technol. A 16, 956–960 (1998)
https://doi.org/10.1116/1.581219
Surface cleaning aluminum foil with ozone gas
J. Vac. Sci. Technol. A 16, 961–963 (1998)
https://doi.org/10.1116/1.581220
Atomic force microscopy study of the faceting on MgO(110) surface
J. Vac. Sci. Technol. A 16, 964–967 (1998)
https://doi.org/10.1116/1.581279
Atomic force microscopy study of microcrystalline SiC fabricated by ion beam synthesis
J. Vac. Sci. Technol. A 16, 968–973 (1998)
https://doi.org/10.1116/1.581280
Ellipsometric and low energy electron diffraction study of the layer growth of xenon physisorbed on Ag (111) surface
J. Vac. Sci. Technol. A 16, 974–978 (1998)
https://doi.org/10.1116/1.581480
Desorption of metastable particles induced by electronic excitation at the surface of rare-gas solid with physisorbed hydrogen
J. Vac. Sci. Technol. A 16, 979–983 (1998)
https://doi.org/10.1116/1.581281
Ammonia decomposition on Ru(001) using gas-phase atomic hydrogen
J. Vac. Sci. Technol. A 16, 984–989 (1998)
https://doi.org/10.1116/1.581282
Novel electronic and magnetic properties of ultrathin chromium oxide films grown on Pt(111)
P. S. Robbert; H. Geisler; C. A. Ventrice, Jr.; J. van Ek; S. Chaturvedi; J. A. Rodriguez; M. Kuhn; U. Diebold
J. Vac. Sci. Technol. A 16, 990–995 (1998)
https://doi.org/10.1116/1.581283
Coadsorption of sodium and water on MgO(100)/Mo(100) studied by ultraviolet photoelectron and metastable impact electron spectroscopies
J. Vac. Sci. Technol. A 16, 996–999 (1998)
https://doi.org/10.1116/1.581284
Oxygen adsorption and oxide formation on (111)
J. Vac. Sci. Technol. A 16, 1000–1005 (1998)
https://doi.org/10.1116/1.581221
Voltage-dependent scanning tunneling microscopy images of the Ge(111)- surface
J. Vac. Sci. Technol. A 16, 1006–1009 (1998)
https://doi.org/10.1116/1.581222
Carbon monoxide oxidation on Ir (110)
J. Vac. Sci. Technol. A 16, 1010–1013 (1998)
https://doi.org/10.1116/1.581223
A fast x-ray photoelectron spectroscopy study of the reaction over Rh(533): Identifying surface species
J. Vac. Sci. Technol. A 16, 1014–1016 (1998)
https://doi.org/10.1116/1.581224
Near edge x-ray absorption fine structure study of benzene adsorbed on metal surfaces: Comparison to benzene cluster complexes
J. Vac. Sci. Technol. A 16, 1017–1022 (1998)
https://doi.org/10.1116/1.581225
Vibrational study of and radicals on the Cu(111) surface by high resolution electron energy loss spectroscopy
J. Vac. Sci. Technol. A 16, 1023–1030 (1998)
https://doi.org/10.1116/1.581226
Scanning tunneling microscopy study of benzene adsorption on
J. Vac. Sci. Technol. A 16, 1031–1036 (1998)
https://doi.org/10.1116/1.581227
Multiple bonding geometries and binding state conversion of benzene/Si(100)
J. Vac. Sci. Technol. A 16, 1037–1042 (1998)
https://doi.org/10.1116/1.581228
Surface segregation of low-energy ion-induced defects in Si
J. Vac. Sci. Technol. A 16, 1043–1046 (1998)
https://doi.org/10.1116/1.581229
Lateral manipulation of single Cu atoms on flat and stepped copper surfaces
J. Vac. Sci. Technol. A 16, 1047–1049 (1998)
https://doi.org/10.1116/1.581230
Photoexcited surfaces: Properties and chemisorption
J. Vac. Sci. Technol. A 16, 1050–1054 (1998)
https://doi.org/10.1116/1.581231
Surface structure and bonding in the strongly correlated metal oxides NiO and
J. Vac. Sci. Technol. A 16, 1055–1058 (1998)
https://doi.org/10.1116/1.581232
Scanning tunneling microscopy of equilibrium crystal shapes
J. Vac. Sci. Technol. A 16, 1059–1065 (1998)
https://doi.org/10.1116/1.581233
Reaction of 1,2-ethanedithiol on clean, sulfur-modified, and carbon-modified Mo (110) surfaces
J. Vac. Sci. Technol. A 16, 1066–1072 (1998)
https://doi.org/10.1116/1.581234
Bonding nature between oxygen and sodium on Si(113) surface
Chan-Cuk Hwang; Ki-Seok An; Rae-Jun Park; Jeong-Seon Kim; Ju-Bong Lee; Chong-Yun Park; Akio Kimura; Akito Kakizaki
J. Vac. Sci. Technol. A 16, 1073–1077 (1998)
https://doi.org/10.1116/1.581235
Nonstoichiometry on (110) and interfaces
J. Vac. Sci. Technol. A 16, 1078–1085 (1998)
https://doi.org/10.1116/1.581236
Photoelectron microspectroscopy observations of a cleaved surface of semiconductor double heterostructure
Takanori Kiyokura; Fumihiko Maeda; Yoshio Watanabe; Yoshiaki Kadota; Yoshinori Iketaki; Yoshiaki Horikawa; Masaharu Oshima; Eiji Shigemasa; Akira Yagishita
J. Vac. Sci. Technol. A 16, 1086–1090 (1998)
https://doi.org/10.1116/1.581237
Auger electron spectroscopy depth profiling of Ge/Si multilayers using and ions
J. Vac. Sci. Technol. A 16, 1091–1095 (1998)
https://doi.org/10.1116/1.581238
Determination and application of the depth resolution function in sputter profiling with secondary ion mass spectroscopy and Auger electron spectroscopy
J. Vac. Sci. Technol. A 16, 1096–1102 (1998)
https://doi.org/10.1116/1.581239
Tungsten silicide composition analysis by Rutherford backscattering spectroscopy, Auger electron spectroscopy, and x-ray photoelectron spectroscopy
J. Vac. Sci. Technol. A 16, 1103–1105 (1998)
https://doi.org/10.1116/1.581240
Quantitative uses of the x-ray photoelectron spectroscopy valence band region in the analysis of polymer blends
J. Vac. Sci. Technol. A 16, 1106–1111 (1998)
https://doi.org/10.1116/1.581241
Valence band x-ray photoelectron spectroscopic investigation of surface cleanliness of aluminum metal and its alloys
J. Vac. Sci. Technol. A 16, 1112–1116 (1998)
https://doi.org/10.1116/1.581242
Ellipsomicroscopy for surface imaging: A novel tool to investigate surface dynamics
J. Vac. Sci. Technol. A 16, 1117–1121 (1998)
https://doi.org/10.1116/1.581243
Two-dimensional imaging of surface morphology by energy-analyzed secondary electrons and Auger electron spectroscopy for stepped Si(111) surfaces
J. Vac. Sci. Technol. A 16, 1122–1126 (1998)
https://doi.org/10.1116/1.581244
A plasma-polymerized protective film for transmission electron microscopy specimen preparation by focused ion beam etching
J. Vac. Sci. Technol. A 16, 1127–1130 (1998)
https://doi.org/10.1116/1.581245
Measurement and control of sticking probability of on stainless steel surfaces
J. Vac. Sci. Technol. A 16, 1131–1136 (1998)
https://doi.org/10.1116/1.581246
Design of a low cost, low magnetic susceptibility, ultrahigh vacuum compatible, flanged electrical break
J. Vac. Sci. Technol. A 16, 1137–1138 (1998)
https://doi.org/10.1116/1.581247
Design and pumping characteristics of a compact titanium–vanadium non-evaporable getter pump
J. Vac. Sci. Technol. A 16, 1139–1144 (1998)
https://doi.org/10.1116/1.581248
Measurements of the helium propagation at 4.4 K in a 480 m long stainless steel pipe
J. Vac. Sci. Technol. A 16, 1145–1150 (1998)
https://doi.org/10.1116/1.581249
Miniature quadrupole residual gas analyzer for process monitoring at milliTorr pressures
J. Vac. Sci. Technol. A 16, 1157–1162 (1998)
https://doi.org/10.1116/1.581251
Application of calculated physical adsorption isotherms to a radon sensor
J. Vac. Sci. Technol. A 16, 1169–1171 (1998)
https://doi.org/10.1116/1.581253
The morphology of duplex and quadruplex DNA on mica
Tera Muir; Emily Morales; Jeffrey Root; Indira Kumar; Brian Garcia; Christian Vellandi; Dena Jenigian; Thomas Marsh; Eric Henderson; James Vesenka
J. Vac. Sci. Technol. A 16, 1172–1177 (1998)
https://doi.org/10.1116/1.581254
A numerical simulation of the evolution of nanometer-scale surface topography generated by ion milling
J. Vac. Sci. Technol. A 16, 1178–1182 (1998)
https://doi.org/10.1116/1.581255
Cell-based sensor microelectrode array characterized by imaging x-ray photoelectron spectroscopy, scanning electron microscopy, impedance measurements, and extracellular recordings
D. R. Jung; D. S. Cuttino; J. J. Pancrazio; P. Manos; T. Cluster; R. S. Sathanoori; L. E. Aloi; M. G. Coulombe; M. A. Czarnaski; D. A. Borkholder; G. T. A. Kovacs; P. Bey; D. A. Stenger; J. J. Hickman
J. Vac. Sci. Technol. A 16, 1183–1188 (1998)
https://doi.org/10.1116/1.581256
Pit-free electropolishing of aluminum and its application for process chamber
J. Vac. Sci. Technol. A 16, 1196–1200 (1998)
https://doi.org/10.1116/1.581258
Self-consistent particle simulation of radio-frequency discharge with implementation of all ion–neutral reactive collisions
J. Vac. Sci. Technol. A 16, 1201–1206 (1998)
https://doi.org/10.1116/1.581259
Studies on structural, electrical, compositional, and mechanical properties of thin films produced by low-pressure chemical vapor deposition
S. Santucci; L. Lozzi; M. Passacantando; P. Picozzi; P. Petricola; G. Moccia; R. Alfonsetti; R. Diamanti
J. Vac. Sci. Technol. A 16, 1207–1212 (1998)
https://doi.org/10.1116/1.581260
Properties of ZnO:In film prepared by sputtering of facing ZnO:In and Zn targets
J. Vac. Sci. Technol. A 16, 1213–1217 (1998)
https://doi.org/10.1116/1.581261
-type transparent conducting thin films prepared by rf magnetron sputtering
J. Vac. Sci. Technol. A 16, 1218–1221 (1998)
https://doi.org/10.1116/1.581262
X-ray photoelectron spectroscopy characterization of the oxidation of electroplated and sputter deposited copper surfaces
J. Vac. Sci. Technol. A 16, 1227–1232 (1998)
https://doi.org/10.1116/1.581264
Submicron contacts for electrical characterization of semiconducting thin films
C. Ballif; M. Regula; F. Lévy; F. Burmeister; C. Schäfle; Th. Matthes; P. Leiderer; Ph. Niedermann; W. Gutmannsbauer; R. Bucher
J. Vac. Sci. Technol. A 16, 1239–1243 (1998)
https://doi.org/10.1116/1.581266
Control of the preferred orientation of AlN thin films by collimated sputtering
J. Vac. Sci. Technol. A 16, 1244–1246 (1998)
https://doi.org/10.1116/1.581267
Generation of vapor stream using a porous rod in an electron beam evaporation process
J. Vac. Sci. Technol. A 16, 1247–1250 (1998)
https://doi.org/10.1116/1.581268
Effects of treatment on the recrystallization and electro-optical properties of CdTe thin films
J. Vac. Sci. Technol. A 16, 1251–1257 (1998)
https://doi.org/10.1116/1.581269
Microstructure-dependent ferroelectric properties of thin films fabricated by radio frequency magnetron sputtering
J. Vac. Sci. Technol. A 16, 1258–1261 (1998)
https://doi.org/10.1116/1.581270
X-ray photoelectron spectroscopy study of TiN films produced with tetrakis(dimethylamido)titanium and selected N-containing precursors on
J. Vac. Sci. Technol. A 16, 1262–1267 (1998)
https://doi.org/10.1116/1.581271
Large magnetoresistance effect in as-grown epitaxial films prepared by a molecular beam epitaxy coevaporation technique
J. Vac. Sci. Technol. A 16, 1268–1271 (1998)
https://doi.org/10.1116/1.581272
Hardness enhancement by compositionally modulated structure of Ti/TiN multilayer films
J. Vac. Sci. Technol. A 16, 1272–1276 (1998)
https://doi.org/10.1116/1.581273
Computer modeling as a tool to predict deposition rate and film composition in the reactive sputtering process
J. Vac. Sci. Technol. A 16, 1277–1285 (1998)
https://doi.org/10.1116/1.581274
Modeling of the deposition of stoichiometric using nonarcing direct current magnetron sputtering
J. Vac. Sci. Technol. A 16, 1286–1292 (1998)
https://doi.org/10.1116/1.581275
Atomistic simulations of organic thin film deposition through hyperthermal cluster impacts
J. Vac. Sci. Technol. A 16, 1293–1296 (1998)
https://doi.org/10.1116/1.581276
Determining thickness of thin metal films with spectroscopic ellipsometry for applications in magnetic random-access memory
J. Vac. Sci. Technol. A 16, 1297–1302 (1998)
https://doi.org/10.1116/1.581277
In situ sputter deposition discharge diagnostics for tailoring ceramic film growth
J. Vac. Sci. Technol. A 16, 1303–1310 (1998)
https://doi.org/10.1116/1.581278
Growth of SiC and films by pulsed laser ablation of SiC in Ar and environments
J. Vac. Sci. Technol. A 16, 1311–1315 (1998)
https://doi.org/10.1116/1.581143
Plasma enhanced selective area microcrystalline silicon deposition on hydrogenated amorphous silicon: Surface modification for controlled nucleation
J. Vac. Sci. Technol. A 16, 1316–1320 (1998)
https://doi.org/10.1116/1.581144
Synergetic effects in ion beam energy and substrate temperature during hyperthermal particle film deposition
J. Vac. Sci. Technol. A 16, 1321–1326 (1998)
https://doi.org/10.1116/1.581145
Seeded pulsed supersonic molecular beam growth of silicon carbide thin films
J. Vac. Sci. Technol. A 16, 1327–1330 (1998)
https://doi.org/10.1116/1.581522
Cubic boron nitride thin film deposition by unbalanced magnetron sputtering and dc pulsed substrate biasing
J. Vac. Sci. Technol. A 16, 1331–1335 (1998)
https://doi.org/10.1116/1.581146
Structural and magnetic properties of Fe/Rh(001) sputter deposited multilayers
J. Vac. Sci. Technol. A 16, 1336–1341 (1998)
https://doi.org/10.1116/1.581147
Co on stepped Cu(100) surfaces: A comparison of experimental data with Monte Carlo growth simulations
J. Vac. Sci. Technol. A 16, 1342–1347 (1998)
https://doi.org/10.1116/1.581148
Characterization and photoemission dichroism of epitaxially grown Gd(0001)/Y(0001)
S. R. Mishra; T. R. Cummins; G. D. Waddill; K. W. Goodman; J. G. Tobin; W. J. Gammon; T. Sherwood; D. P. Pappas
J. Vac. Sci. Technol. A 16, 1348–1354 (1998)
https://doi.org/10.1116/1.581149
Directly identifying the order of layer switching in magnetic multilayers
J. Vac. Sci. Technol. A 16, 1355–1358 (1998)
https://doi.org/10.1116/1.581150
Comparison of x-ray magnetic circular dichroism at the and edges of Mo, Ru, Rh, and Pd
J. Vac. Sci. Technol. A 16, 1359–1363 (1998)
https://doi.org/10.1116/1.581151
Magnetization of ultrathin Fe films deposited on Gd (0001)
J. Vac. Sci. Technol. A 16, 1364–1367 (1998)
https://doi.org/10.1116/1.581152
Quantum well states in high-quality Cu films deposited on Co (100): A high resolution photoemission study
J. Vac. Sci. Technol. A 16, 1368–1373 (1998)
https://doi.org/10.1116/1.581153
Magnetic nanostructures produced by electron beam patterning of direct write transition metal fluoride resists
J. Vac. Sci. Technol. A 16, 1374–1379 (1998)
https://doi.org/10.1116/1.581154
Biaxially oriented conductive thin films on
J. Vac. Sci. Technol. A 16, 1380–1383 (1998)
https://doi.org/10.1116/1.581155
Analysis of films by highly charged ion based time-of-flight secondary ion mass spectrometry and elastic recoil detection
J. Vac. Sci. Technol. A 16, 1384–1387 (1998)
https://doi.org/10.1116/1.581523
Sharing of Auger electron spectroscopy and x-ray photoelectron spectroscopy spectral data through the Internet
J. Vac. Sci. Technol. A 16, 1388–1393 (1998)
https://doi.org/10.1116/1.581156
Characterization of zinc implanted silica: Effects of thermal annealing and picosecond laser radiation
Jinli Chen; R. Mu; A. Ueda; M. H. Wu; Y.-S. Tung; Z. Gu; D. O. Henderson; C. W. White; J. D. Budai; R. A. Zuhr
J. Vac. Sci. Technol. A 16, 1409–1413 (1998)
https://doi.org/10.1116/1.581159
Numerical study on near field imaging of fluorescence decay of near-surface molecule cluster
J. Vac. Sci. Technol. A 16, 1414–1419 (1998)
https://doi.org/10.1116/1.581160
Interference in far-field radiation of two contra-propagating surface plasmon polaritons in the Kretchmann configuration
J. Vac. Sci. Technol. A 16, 1420–1424 (1998)
https://doi.org/10.1116/1.581161
Imaging and direct manipulation of nanoscale three-dimensional features using the noncontact atomic force microscope
J. Vac. Sci. Technol. A 16, 1425–1429 (1998)
https://doi.org/10.1116/1.581162
The use of a Si-based resist system and Ti electrode for the fabrication of sub-10 nm metal-insulator-metal tunnel junctions
J. Vac. Sci. Technol. A 16, 1430–1434 (1998)
https://doi.org/10.1116/1.581163
Observation of channel shortening in -metal–oxide–semiconductor field-effect transistors arising from interconnect plasma processing
J. Vac. Sci. Technol. A 16, 1435–1439 (1998)
https://doi.org/10.1116/1.581164
Evaluation of plasma charging damage during polysilicon gate etching process in a decoupled plasma source reactor
J. Vac. Sci. Technol. A 16, 1440–1443 (1998)
https://doi.org/10.1116/1.581165
Probe diagnostics in a full wave resonator radio-frequency discharge
J. Vac. Sci. Technol. A 16, 1444–1448 (1998)
https://doi.org/10.1116/1.581166
Dynamic images of plasma processes: Use of Fourier blobs for endpoint detection during plasma etching of patterned wafers
J. Vac. Sci. Technol. A 16, 1449–1453 (1998)
https://doi.org/10.1116/1.581167
Effect of upper hybrid waves on uniform electron cyclotron resonance plasmas
J. Vac. Sci. Technol. A 16, 1454–1458 (1998)
https://doi.org/10.1116/1.581168
Role of gas feed delivery and dilutent on oxide etching in an inductively coupled plasma etch system
J. Vac. Sci. Technol. A 16, 1459–1463 (1998)
https://doi.org/10.1116/1.581169
Characterization of the etch rate non-uniformity in a magnetically enhanced reactive ion etcher
J. Vac. Sci. Technol. A 16, 1464–1468 (1998)
https://doi.org/10.1116/1.581170
Passivation role of fluorine on the anticorrosion of AlCu films after plasma etching
Kyu-Ha Baek; Chang-Il Kim; Kwang-Ho Kwon; Tae-Hyung Kim; Eui-Goo Chang; Sun Jin Yun; Yong-Sun Yoon; Sang-Gi Kim; Kee-Soo Nam
J. Vac. Sci. Technol. A 16, 1469–1472 (1998)
https://doi.org/10.1116/1.581171
Hydrogen and disilane adsorption on low energy ion-roughened Si (100)
J. Vac. Sci. Technol. A 16, 1473–1477 (1998)
https://doi.org/10.1116/1.581172
Etch characteristics of GaN using inductively coupled and plasmas
J. Vac. Sci. Technol. A 16, 1478–1482 (1998)
https://doi.org/10.1116/1.581173
A study of platinum electrode patterning in a reactive ion etcher
J. Vac. Sci. Technol. A 16, 1489–1496 (1998)
https://doi.org/10.1116/1.581175
Comparison of plasma chemistries for inductively coupled plasma etching of InGaAlP alloys
J. Vac. Sci. Technol. A 16, 1497–1501 (1998)
https://doi.org/10.1116/1.581176
Deep-submicron trench profile control using a magnetron enhanced reactive ion etching system for shallow trench isolation
J. Vac. Sci. Technol. A 16, 1502–1508 (1998)
https://doi.org/10.1116/1.581177
Characterization of low dielectric constant plasma enhanced chemical vapor deposition fluorinated silicon oxide films as intermetal dielectric materials
J. Vac. Sci. Technol. A 16, 1509–1513 (1998)
https://doi.org/10.1116/1.581178
Contact etch scaling with contact dimension
J. Vac. Sci. Technol. A 16, 1514–1518 (1998)
https://doi.org/10.1116/1.581179
Flow rate rule for high aspect ratio hole etching
J. Vac. Sci. Technol. A 16, 1519–1524 (1998)
https://doi.org/10.1116/1.581180
Stability of Si-O-F low-K dielectrics: Attack by water molecules as function of near-neighbor Si-F bonding arrangements
J. Vac. Sci. Technol. A 16, 1525–1528 (1998)
https://doi.org/10.1116/1.581181
Large-area high-density plasma excitation using standing pure and hybrid surface waves
J. Vac. Sci. Technol. A 16, 1537–1541 (1998)
https://doi.org/10.1116/1.581183
High-rate etching of GaAs using chlorine atmospheres doped with a Lewis acid
J. Vac. Sci. Technol. A 16, 1542–1546 (1998)
https://doi.org/10.1116/1.581184
Surface chemistry and damage in the high density plasma etching of gallium arsenide
J. Vac. Sci. Technol. A 16, 1547–1551 (1998)
https://doi.org/10.1116/1.581185
Proposal for an etching mechanism of InP in mixtures based on plasma diagnostics and surface analysis
J. Vac. Sci. Technol. A 16, 1552–1559 (1998)
https://doi.org/10.1116/1.581186
Spatially-averaged model for plasma etch processes: Comparison of different approaches to electron kinetics
J. Vac. Sci. Technol. A 16, 1560–1565 (1998)
https://doi.org/10.1116/1.581187
Visualization of etching mechanisms of a vicinal Cu surface using scanning tunneling microscopy
J. Vac. Sci. Technol. A 16, 1566–1570 (1998)
https://doi.org/10.1116/1.581188
Halogen uptake by thin layers on exposure to and plasmas, investigated by vacuum transfer x-ray photoelectron spectroscopy
J. Vac. Sci. Technol. A 16, 1571–1576 (1998)
https://doi.org/10.1116/1.581189
Evaluation of trifluoroacetic anhydride as an alternative plasma enhanced chemical vapor deposition chamber clean chemistry
J. Vac. Sci. Technol. A 16, 1577–1581 (1998)
https://doi.org/10.1116/1.581190
Ultrahigh-selectivity silicon nitride etch process using an inductively coupled plasma source
J. Vac. Sci. Technol. A 16, 1582–1587 (1998)
https://doi.org/10.1116/1.581191
Suppression of notching by lowering the bias frequency in electron cyclotron resonance plasma with a divergent magnetic field
J. Vac. Sci. Technol. A 16, 1588–1593 (1998)
https://doi.org/10.1116/1.581192
etching in magnetic neutral loop discharge plasma
J. Vac. Sci. Technol. A 16, 1594–1599 (1998)
https://doi.org/10.1116/1.581193
Magnetic field optimization in a dielectric magnetically enhanced reactive ion etch reactor to produce an instantaneously uniform plasma
J. Vac. Sci. Technol. A 16, 1600–1603 (1998)
https://doi.org/10.1116/1.581126
Dielectric etching for 0.18 μm technologies
J. Vac. Sci. Technol. A 16, 1604–1608 (1998)
https://doi.org/10.1116/1.581127
Doping of group III nitrides
J. Vac. Sci. Technol. A 16, 1609–1614 (1998)
https://doi.org/10.1116/1.581128
Ultrahigh vacuum arcjet nitrogen source for selected energy epitaxy of group III nitrides by molecular beam epitaxy
F. J. Grunthaner; R. Bicknell-Tassius; P. Deelman; P. J. Grunthaner; C. Bryson; E. Snyder; J. L. Giuliani; J. P. Apruzese; P. Kepple
J. Vac. Sci. Technol. A 16, 1615–1620 (1998)
https://doi.org/10.1116/1.581129
Selective inductively coupled plasma etching of group-III nitrides in - and -based plasmas
R. J. Shul; C. G. Willison; M. M. Bridges; J. Han; J. W. Lee; S. J. Pearton; C. R. Abernathy; J. D. MacKenzie; S. M. Donovan; L. Zhang; L. F. Lester
J. Vac. Sci. Technol. A 16, 1621–1626 (1998)
https://doi.org/10.1116/1.581130
Effect of atomic hydrogen on Er luminescence from AlN
S. J. Pearton; C. R. Abernathy; J. D. MacKenzie; U. Hömmerich; J. M. Zavada; R. G. Wilson; R. N. Schwartz
J. Vac. Sci. Technol. A 16, 1627–1630 (1998)
https://doi.org/10.1116/1.581131
Comparison of inductively coupled plasma and /H2 etching of III-nitrides
J. Vac. Sci. Technol. A 16, 1631–1635 (1998)
https://doi.org/10.1116/1.581132
Electrical, optical, and structural properties of indium-tin-oxide thin films deposited on polyethylene terephthalate substrates by rf sputtering
J. Vac. Sci. Technol. A 16, 1636–1640 (1998)
https://doi.org/10.1116/1.581133
Wurtzite GaN surface structures studied by scanning tunneling microscopy and reflection high energy electron diffraction
A. R. Smith; V. Ramachandran; R. M. Feenstra; D. W. Greve; M.-S. Shin; M. Skowronski; J. Neugebauer; J. E. Northrup
J. Vac. Sci. Technol. A 16, 1641–1645 (1998)
https://doi.org/10.1116/1.581134
Enhanced Schottky barrier on InGaAs for high performance photodetector application
J. Vac. Sci. Technol. A 16, 1646–1649 (1998)
https://doi.org/10.1116/1.581135
Growth of GaS on GaAs (100) surfaces using the molecular precursor in ultrahigh vacuum
J. Vac. Sci. Technol. A 16, 1650–1653 (1998)
https://doi.org/10.1116/1.581136
Spectroscopic and thermal studies of -SiC:H film growth: Comparison of mono-, tri-, and tetramethylsilane
J. Vac. Sci. Technol. A 16, 1658–1663 (1998)
https://doi.org/10.1116/1.581138
Gate leakage current: A sensitive characterization parameter for plasma-induced damage detection in ultrathin oxide submicron transistors
J. Vac. Sci. Technol. A 16, 1664–1669 (1998)
https://doi.org/10.1116/1.581139
Ultrathin film growth by chemical vapor deposition of and on bare and -passivated Si(100) for gate dielectric applications
K.-A. Son; A. Y. Mao; B. Y. Kim; F. Liu; E. D. Pylant; D. A. Hess; J. M. White; D. L. Kwong; D. A. Roberts; R. N. Vrtis
J. Vac. Sci. Technol. A 16, 1670–1675 (1998)
https://doi.org/10.1116/1.581140
Octadecyltrichlorosilane self-assembled-monolayer islands as a self-patterned-mask for HF etching of on Si
J. Vac. Sci. Technol. A 16, 1680–1685 (1998)
https://doi.org/10.1116/1.581142
Transition metal nitride formed by simultaneous physisorption and thermal evaporation; TiN/Si(100)
J. Vac. Sci. Technol. A 16, 1686–1691 (1998)
https://doi.org/10.1116/1.581285
Measurements of epitaxially grown structures by ballistic electron emission microscopy and scanning tunneling microscopy
J. Vac. Sci. Technol. A 16, 1692–1696 (1998)
https://doi.org/10.1116/1.581286
Development of electron cyclotron resonance and inductively coupled plasma high density plasma etching for patterning of NiFe and NiFeCo
J. Vac. Sci. Technol. A 16, 1697–1701 (1998)
https://doi.org/10.1116/1.581287
Effects of “processing parameters” in plasma deposition: Acrylic acid revisited
J. Vac. Sci. Technol. A 16, 1702–1709 (1998)
https://doi.org/10.1116/1.581288
Surface studies of plasma source ion implantation treated polystyrene
J. Vac. Sci. Technol. A 16, 1710–1715 (1998)
https://doi.org/10.1116/1.581289
Real-time core-level spectroscopy of initial thermal oxide on Si(100)
J. Vac. Sci. Technol. A 16, 1716–1720 (1998)
https://doi.org/10.1116/1.581290
Optimization of nitrided gate dielectrics by plasma-assisted and rapid thermal processing
J. Vac. Sci. Technol. A 16, 1721–1729 (1998)
https://doi.org/10.1116/1.581291
Second-harmonic generation at the interface between Si(100) and thin layers
J. Vac. Sci. Technol. A 16, 1730–1734 (1998)
https://doi.org/10.1116/1.581292
Nanoscale scratch resistance of ultrathin protective overcoats on hard magnetic disks
J. Vac. Sci. Technol. A 16, 1741–1744 (1998)
https://doi.org/10.1116/1.581294
Study of substrate bias effect on corrosion susceptibility of thin film magnetic disks by accelerated chemical tests
J. Vac. Sci. Technol. A 16, 1745–1749 (1998)
https://doi.org/10.1116/1.581295
Carbon overcoat composition and structure analysis by secondary ion mass spectrometry
J. Vac. Sci. Technol. A 16, 1750–1756 (1998)
https://doi.org/10.1116/1.581296
Interface studies of tungsten nitride and titanium nitride composite metal gate electrodes with thin dielectric layers
J. Vac. Sci. Technol. A 16, 1757–1761 (1998)
https://doi.org/10.1116/1.581297
Hydrogen in silicon: Fundamental properties and consequences for devices
J. Vac. Sci. Technol. A 16, 1767–1771 (1998)
https://doi.org/10.1116/1.581299
Effects of surface phosphorus on the kinetics of hydrogen desorption from silane-adsorbed Si (100) surface at room temperatures
J. Vac. Sci. Technol. A 16, 1772–1774 (1998)
https://doi.org/10.1116/1.581300
Formation of periodic step and terrace structure on Si(100) surface during annealing in hydrogen diluted with inert gas
J. Vac. Sci. Technol. A 16, 1775–1778 (1998)
https://doi.org/10.1116/1.581301