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Fabrication of excess PbO-doped ${Pb(Zr}_{0.52} {Ti}_{0.48}) O_{3}$ thin films using radio frequency magnetron sputtering method

Tae Song Kim; Dong Joo Kim; Jeon Kook Lee; Hyung Jin Jung

J. Vac. Sci. Technol. A 15, 2831–2835 (1997) https://doi.org/10.1116/1.580835

View articletitled, Fabrication of excess PbO-doped <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Pb(Zr</mi><mrow><mtext>0.52</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ti</mi><mrow><mtext>0.48</mtext></mrow></msub><mi xmlns="">)</mi><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mn>3</mn></mrow></msub></math> thin films using radio frequency magnetron sputtering method

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Properties of crystallized ${Si}_{1−x} {Ge}_{x}$ thin films deposited by sputtering

Emil V. Jelenkovic; K. Y. Tong; Z. Sun; C. L. Mak; W. Y. Cheung

J. Vac. Sci. Technol. A 15, 2836–2841 (1997) https://doi.org/10.1116/1.580836

Abstract

View articletitled, Properties of crystallized <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Si</mi><mrow><mtext>1−x</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ge</mi><mrow><mi>x</mi></mrow></msub></math> thin films deposited by sputtering

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Direct current magnetron sputtered W–AlN cermet solar absorber films

Qi-Chu Zhang

J. Vac. Sci. Technol. A 15, 2842–2846 (1997) https://doi.org/10.1116/1.580837

Abstract

View articletitled, Direct current magnetron sputtered W–AlN cermet solar absorber films

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Simulation of sputter deposition at high pressures

T. Smy; L. Tan; S. S. Winterton; S. K. Dew; M. J. Brett

J. Vac. Sci. Technol. A 15, 2847–2853 (1997) https://doi.org/10.1116/1.580838

Abstract

View articletitled, Simulation of sputter deposition at high pressures

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Time dependence and spatial distribution of the deposition rate of ${YBa}_{2} {Cu}_{3} O_{7}$ thin films in 90° off-axis sputtering

P. G. Quigley; R. A. Rao; C. B. Eom

J. Vac. Sci. Technol. A 15, 2854–2858 (1997) https://doi.org/10.1116/1.580839

Abstract

View articletitled, Time dependence and spatial distribution of the deposition rate of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">YBa</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Cu</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mi mathvariant="normal">7</mi></mrow></msub></math> thin films in 90° off-axis sputtering

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Mass and energy measurements of the species responsible for $c BN$ growth in rf bias sputter conditions

Osamu Tsuda; Yoshinao Tatebayashi; Yukiko Yamada-Takamura; Toyonobu Yoshida

J. Vac. Sci. Technol. A 15, 2859–2863 (1997) https://doi.org/10.1116/1.580840

Abstract

View articletitled, Mass and energy measurements of the species responsible for <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">c</mi><mi mathvariant="normal" xmlns="">BN</mi></math> growth in rf bias sputter conditions

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Discharge disruptions in a helicon plasma source

K. P. Shamrai; V. F. Virko; H.-O. Blom; V. P. Pavlenko; V. B. Taranov; L. B. Jonsson; C. Hedlund; S. Berg

J. Vac. Sci. Technol. A 15, 2864–2874 (1997) https://doi.org/10.1116/1.580841

Abstract

View articletitled, Discharge disruptions in a helicon plasma source

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Development of an energetic ion assisted mixing and deposition process for ${TiN}_{x}$ and diamondlike carbon films, using a co-axial geometry in plasma source ion implantation

Shamim M. Malik; R. P. Fetherston; J. R. Conrad

J. Vac. Sci. Technol. A 15, 2875–2879 (1997) https://doi.org/10.1116/1.580842

Abstract

View articletitled, Development of an energetic ion assisted mixing and deposition process for <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">TiN</mi><mrow><mi>x</mi></mrow></msub></math> and diamondlike carbon films, using a co-axial geometry in plasma source ion implantation

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Influence on selective SiO₂/Si etching of carbon atoms produced by CH₄ addition to a C₄F₈ permanent magnet electron cyclotron resonance etching plasma

Shoji Den; Tatsushi Kuno; Masafumi Ito; Masaru Hori; Toshio Goto; Patrick O’Keeffe; Yuzo Hayashi; Yuichi Sakamoto

J. Vac. Sci. Technol. A 15, 2880–2884 (1997) https://doi.org/10.1116/1.580843

Abstract

View articletitled, Influence on selective SiO2/Si etching of carbon atoms produced by CH4 addition to a C4F8 permanent magnet electron cyclotron resonance etching plasma

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Characterization of an azimuthally symmetric helicon wave high density plasma source

G. R. Tynan; A. D. Bailey, III; G. A. Campbell; R. Charatan; A. de Chambrier; G. Gibson; D. J. Hemker; K. Jones; A. Kuthi; C. Lee; T. Shoji; M. Wilcoxson

J. Vac. Sci. Technol. A 15, 2885–2892 (1997) https://doi.org/10.1116/1.580844

Abstract

View articletitled, Characterization of an azimuthally symmetric helicon wave high density plasma source

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Structure and chemical composition of fluorinated ${SiO}_{2}$ films deposited using ${SiF}_{4} {/O}_{2}$ plasmas

Sang M. Han; Eray S. Aydil

J. Vac. Sci. Technol. A 15, 2893–2904 (1997) https://doi.org/10.1116/1.580845

Abstract

View articletitled, Structure and chemical composition of fluorinated <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SiO</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math> films deposited using <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SiF</mi><mrow><mi mathvariant="normal">4</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">/O</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math> plasmas

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Characteristics of spray pyrolytic ZnO:In thin films grown from zinc acetate and indium nitrate

A. Maldonado; M. de la L. Olvera; R. Asomoza; E. P. Zironi; J. Cañetas-Ortega; J. Palacios-Gómez

J. Vac. Sci. Technol. A 15, 2905–2907 (1997) https://doi.org/10.1116/1.580883

Abstract

View articletitled, Characteristics of spray pyrolytic ZnO:In thin films grown from zinc acetate and indium nitrate

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Structure of fluorine-doped silicon oxide films deposited by plasma-enhanced chemical vapor deposition

M. Yoshimaru; S. Koizumi; K. Shimokawa

J. Vac. Sci. Technol. A 15, 2908–2914 (1997) https://doi.org/10.1116/1.580884

Abstract

View articletitled, Structure of fluorine-doped silicon oxide films deposited by plasma-enhanced chemical vapor deposition

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Interaction between water and fluorine-doped silicon oxide films deposited by plasma-enhanced chemical vapor deposition

M. Yoshimaru; S. Koizumi; K. Shimokawa

J. Vac. Sci. Technol. A 15, 2915–2922 (1997) https://doi.org/10.1116/1.580885

Abstract

View articletitled, Interaction between water and fluorine-doped silicon oxide films deposited by plasma-enhanced chemical vapor deposition

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Parametrization of the Laframboise theory for cylindrical Langmuir probe analysis

Michael Mausbach

J. Vac. Sci. Technol. A 15, 2923–2929 (1997) https://doi.org/10.1116/1.580886

Abstract

View articletitled, Parametrization of the Laframboise theory for cylindrical Langmuir probe analysis

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Electrical characterization of a processing plasma chamber

Weston C. Roth; Robert N. Carlile; John F. O’Hanlon

J. Vac. Sci. Technol. A 15, 2930–2937 (1997) https://doi.org/10.1116/1.580887

Abstract

View articletitled, Electrical characterization of a processing plasma chamber

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Investigation of stored energy in plasma deposited ${TiN}_{x}$ films

H. Wulff; C. Eggs

J. Vac. Sci. Technol. A 15, 2938–2944 (1997) https://doi.org/10.1116/1.580888

Abstract

View articletitled, Investigation of stored energy in plasma deposited <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">TiN</mi><mrow><mi>x</mi></mrow></msub></math> films

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Effect of grain size and Pb dopant on luminescence in ${BaTiO}_{3}$

R. S. Katiyar; J. F. Meng; Brajesh K. Rai

J. Vac. Sci. Technol. A 15, 2945–2948 (1997) https://doi.org/10.1116/1.580889

Abstract

View articletitled, Effect of grain size and Pb dopant on luminescence in <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">BaTiO</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub></math>

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Experimental test of the propagation of a He pressure front in a long, cryogenically cooled tube

E. Wallén

J. Vac. Sci. Technol. A 15, 2949–2958 (1997) https://doi.org/10.1116/1.580890

Abstract

View articletitled, Experimental test of the propagation of a He pressure front in a long, cryogenically cooled tube

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Transition metal cleaning using thermal beams

Jane P. Chang; Zhe Zhang; Han Xu; Herbert H. Sawin; Jeffery W. Butterbaugh

J. Vac. Sci. Technol. A 15, 2959–2967 (1997) https://doi.org/10.1116/1.580891

Abstract

View articletitled, Transition metal cleaning using thermal beams

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Doping of amorphous and microcrystalline silicon films deposited by hot-wire chemical vapor deposition using phosphine and trimethylboron

P. Brogueira; V. Chu; A. C. Ferro; J. P. Conde

J. Vac. Sci. Technol. A 15, 2968–2982 (1997) https://doi.org/10.1116/1.580892

Abstract

View articletitled, Doping of amorphous and microcrystalline silicon films deposited by hot-wire chemical vapor deposition using phosphine and trimethylboron

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Characterization of carbon nitride produced by high-current vacuum arc deposition

J. Hartmann; P. Siemroth; B. Schultrich; B. Rauschenbach

J. Vac. Sci. Technol. A 15, 2983–2987 (1997) https://doi.org/10.1116/1.580893

Abstract

View articletitled, Characterization of carbon nitride produced by high-current vacuum arc deposition

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Diamond films grown by hot filament chemical vapor deposition from a solid carbon source

H. K. Woo; S. T. Lee; C. S. Lee; I. Bello; Y. W. Lam

J. Vac. Sci. Technol. A 15, 2988–2992 (1997) https://doi.org/10.1116/1.580894

Abstract

View articletitled, Diamond films grown by hot filament chemical vapor deposition from a solid carbon source

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Dependence of atomic layer-deposited ${Al}_{2} O_{3}$ films characteristics on growth temperature and Al precursors of ${Al(CH}_{3})_{3}$ and ${AlCl}_{3}$

Sun Jin Yun; Kyung-Ho Lee; Jarmo Skarp; Hae-Rim Kim; Kee-Soo Nam

J. Vac. Sci. Technol. A 15, 2993–2997 (1997) https://doi.org/10.1116/1.580895

Abstract

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Kinetics of adsorption and photodesorption of hydrogen on copper surfaces

W. H. Bailey; T. S. Rahman; M. Strongin; J. W. Davenport

J. Vac. Sci. Technol. A 15, 2998–3004 (1997) https://doi.org/10.1116/1.580896

Abstract

View articletitled, Kinetics of adsorption and photodesorption of hydrogen on copper surfaces

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Surface processes occurring on ${TiSi}_{2}$ and ${CoSi}_{2}$ in fluorine-based plasmas. Reactive ion etching in ${CF}_{4} {/CHF}_{3}$ plasmas

M. R. Baklanov; S. Vanhaelemeersch; W. Storm; Y-B. Kim; W. Vandervorst; K. Maex

J. Vac. Sci. Technol. A 15, 3005–3014 (1997) https://doi.org/10.1116/1.580897

Abstract

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Ion distribution functions in inductively coupled radio frequency discharges in argon–chlorine mixtures

J. R. Woodworth; M. E. Riley; P. A. Miller; C. A. Nichols; T. W. Hamilton

J. Vac. Sci. Technol. A 15, 3015–3023 (1997) https://doi.org/10.1116/1.580898

Abstract

View articletitled, Ion distribution functions in inductively coupled radio frequency discharges in argon–chlorine mixtures

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Analysis of the etching of silicon in an inductively coupled chlorine plasma using laser thermal desorption

Jae Y. Choe; Irving P. Herman; Vincent M. Donnelly

J. Vac. Sci. Technol. A 15, 3024–3031 (1997) https://doi.org/10.1116/1.580899

Abstract

View articletitled, Analysis of the etching of silicon in an inductively coupled chlorine plasma using laser thermal desorption

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Ge growth on Si(001) studied by x-ray photoelectron spectroscopy peak shape analysis and atomic force microscopy

M. Schleberger; A. Cohen Simonsen; S. Tougaard; J. L. Hansen; A. Nylandsted Larsen

J. Vac. Sci. Technol. A 15, 3032–3035 (1997) https://doi.org/10.1116/1.580900

Abstract

View articletitled, Ge growth on Si(001) studied by x-ray photoelectron spectroscopy peak shape analysis and atomic force microscopy

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Reflectance anisotropy of the Si(100)1×2-As surface: Discrete dipole calculation

C. H. Patterson; D. Herrendörfer

J. Vac. Sci. Technol. A 15, 3036–3043 (1997) https://doi.org/10.1116/1.580901

Abstract

View articletitled, Reflectance anisotropy of the Si(100)1×2-As surface: Discrete dipole calculation

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Na impurity chemistry in photovoltaic CIGS thin films: Investigation with x-ray photoelectron spectroscopy

David W. Niles; Kannan Ramanathan; Falah Hasoon; Rommel Noufi; Brian J. Tielsch; Julia E. Fulghum

J. Vac. Sci. Technol. A 15, 3044–3049 (1997) https://doi.org/10.1116/1.580902

Abstract

View articletitled, Na impurity chemistry in photovoltaic CIGS thin films: Investigation with x-ray photoelectron spectroscopy

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X-ray photoelectron spectroscopy characterization of semiconductor thin films using simultaneous Mg/Zr excitation

Daniel F. Allgeyer

J. Vac. Sci. Technol. A 15, 3050–3059 (1997) https://doi.org/10.1116/1.580846

Abstract

View articletitled, X-ray photoelectron spectroscopy characterization of semiconductor thin films using simultaneous Mg/Zr excitation

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Preparation and optical studies on flash evaporated Sb₂S₃ thin films

S. Mahanty; J. M. Merino; M. León

J. Vac. Sci. Technol. A 15, 3060–3064 (1997) https://doi.org/10.1116/1.580847

Abstract

View articletitled, Preparation and optical studies on flash evaporated Sb2S3 thin films

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Reflection adsorption infrared spectroscopy of the oxidation of thin films of boron and hafnium diboride grown on Hf(0001)

Michael Belyansky; Michael Trenary

J. Vac. Sci. Technol. A 15, 3065–3068 (1997) https://doi.org/10.1116/1.580848

Abstract

View articletitled, Reflection adsorption infrared spectroscopy of the oxidation of thin films of boron and hafnium diboride grown on Hf(0001)

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Ultrahigh vacuum deposition–reflectometer system for the in situ investigation of Y/Mo extreme-ultraviolet multilayer mirrors

Claude Montcalm; Brian T. Sullivan; Martial Ranger; Henri Pépin

J. Vac. Sci. Technol. A 15, 3069–3081 (1997) https://doi.org/10.1116/1.580849

Abstract

View articletitled, Ultrahigh vacuum deposition–reflectometer system for the in situ investigation of Y/Mo extreme-ultraviolet multilayer mirrors

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Low temperature deposition of epitaxial titanium carbide on MgO(001) by co-evaporation of C₆₀ and Ti

L. Norin; S. McGinnis; U. Jansson; J.-O. Carlsson

J. Vac. Sci. Technol. A 15, 3082–3085 (1997) https://doi.org/10.1116/1.580850

Abstract

View articletitled, Low temperature deposition of epitaxial titanium carbide on MgO(001) by co-evaporation of C60 and Ti

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Roles of ion irradiation for crystalline growth and internal stresses in nickel films onto silicon substrates prepared by the ion beam and vapor deposition method

Naoto Kuratani; Yasuo Murakami; Osamu Imai; Akinori Ebe; Satoshi Nishiyama; Kiyoshi Ogata

J. Vac. Sci. Technol. A 15, 3086–3092 (1997) https://doi.org/10.1116/1.580851

Abstract

View articletitled, Roles of ion irradiation for crystalline growth and internal stresses in nickel films onto silicon substrates prepared by the ion beam and vapor deposition method

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Temperature dependence of the electron induced gas desorption yields on stainless steel, copper, and aluminum

J. Gómez-Goñi; A. G. Mathewson

J. Vac. Sci. Technol. A 15, 3093–3103 (1997) https://doi.org/10.1116/1.580852

Abstract

View articletitled, Temperature dependence of the electron induced gas desorption yields on stainless steel, copper, and aluminum

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Surface kinetic study of ion-induced chemical vapor deposition of copper for focused ion beam applications

T. P. Chiang; H. H. Sawin; C. V. Thompson

J. Vac. Sci. Technol. A 15, 3104–3114 (1997) https://doi.org/10.1116/1.580853

Abstract

View articletitled, Surface kinetic study of ion-induced chemical vapor deposition of copper for focused ion beam applications

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Deconvolution of the Gaussian-convoluted profiles of mercury ions implanted into nickel

Bo-Rong Shi; N. Cue; Ke-Ming Wang

J. Vac. Sci. Technol. A 15, 3115–3119 (1997) https://doi.org/10.1116/1.580854

Abstract

View articletitled, Deconvolution of the Gaussian-convoluted profiles of mercury ions implanted into nickel

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Kinetics of F atoms and fluorocarbon radicals studied by threshold ionization mass spectrometry in a microwave ${CF}_{4}$ plasma

A. Tserepi; W. Schwarzenbach; J. Derouard; N. Sadeghi

J. Vac. Sci. Technol. A 15, 3120–3126 (1997) https://doi.org/10.1116/1.580855

Abstract

View articletitled, Kinetics of F atoms and fluorocarbon radicals studied by threshold ionization mass spectrometry in a microwave <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">CF</mi><mrow><mi mathvariant="normal">4</mi></mrow></msub></math> plasma

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Static secondary ion mass spectrometry study of the decomposition of triethylgallium on GaAs (100)

K. C. Wong; M. S. Jackson; M. T. McEllistrem; R. D. Culp; J. G. Ekerdt

J. Vac. Sci. Technol. A 15, 3127–3133 (1997) https://doi.org/10.1116/1.580856

Abstract

View articletitled, Static secondary ion mass spectrometry study of the decomposition of triethylgallium on GaAs (100)

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Plasma fluorination of polyimide thin films

Kazuhiko Endo; Toru Tatsumi

J. Vac. Sci. Technol. A 15, 3134–3137 (1997) https://doi.org/10.1116/1.580857

Abstract

View articletitled, Plasma fluorination of polyimide thin films

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Improved growth and thermal stability of Parylene films

Seshadri Ganguli; Hemant Agrawal; Bin Wang; Jack F. McDonald; Toh -M. Lu; G.-R. Yang; William N. Gill

J. Vac. Sci. Technol. A 15, 3138–3142 (1997) https://doi.org/10.1116/1.580858

Abstract

View articletitled, Improved growth and thermal stability of Parylene films

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Electrical properties of metal–insulator–semiconductor structures with silicon nitride dielectrics deposited by low temperature plasma enhanced chemical vapor deposition distributed electron cyclotron resonance

M. C. Hugon; F. Delmotte; B. Agius; J. L. Courant

J. Vac. Sci. Technol. A 15, 3143–3153 (1997) https://doi.org/10.1116/1.580859

Abstract

View articletitled, Electrical properties of metal–insulator–semiconductor structures with silicon nitride dielectrics deposited by low temperature plasma enhanced chemical vapor deposition distributed electron cyclotron resonance

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Analysis and characterization of native oxide growth on epitaxial ${Si}_{1−x} {Ge}_{x}$ films after a chemical clean

I.-M. Lee; C. G. Takoudis

J. Vac. Sci. Technol. A 15, 3154–3157 (1997) https://doi.org/10.1116/1.580860

Abstract

View articletitled, Analysis and characterization of native oxide growth on epitaxial <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Si</mi><mrow><mtext>1−x</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ge</mi><mrow><mi>x</mi></mrow></msub></math> films after a chemical clean

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Energy spectra of secondary neutrals obtained by means of the electrostatic energy filter of a commercial low-pressure HF-plasma secondary neutral mass spectrometer

Holger Jenett; Vasile-Dan Hodoroaba

J. Vac. Sci. Technol. A 15, 3158–3162 (1997) https://doi.org/10.1116/1.580861

Abstract

View articletitled, Energy spectra of secondary neutrals obtained by means of the electrostatic energy filter of a commercial low-pressure HF-plasma secondary neutral mass spectrometer

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Corrosion resistance of titanium nitride and mixed titanium/titanium nitride coatings on iron in humid ${SO}_{2}$ -containing atmospheres

A. C. Agudelo; J. R. Gancedo; J. F. Marco; Darko Hanžel

J. Vac. Sci. Technol. A 15, 3163–3169 (1997) https://doi.org/10.1116/1.580862

Abstract

View articletitled, Corrosion resistance of titanium nitride and mixed titanium/titanium nitride coatings on iron in humid <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SO</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math>-containing atmospheres

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Erratum: “Three-dimensional deposition of TiN film using low frequency (50 Hz) plasma chemical vapor deposition” [J. Vac. Sci. Technol. A 15, 1897 (1997)]

M. Shimozuma; H. Date; T. Iwasaki; H. Tagashira; M. Yoshino; K. Yoshida

J. Vac. Sci. Technol. A 15, 3170 (1997) https://doi.org/10.1116/1.580863

View articletitled, Erratum: “Three-dimensional deposition of TiN film using low frequency (50 Hz) plasma chemical vapor deposition” [J. Vac. Sci. Technol. A 15, 1897 (1997)]

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