Skip Nav Destination

Issues

Select Year

Issue

Role of $N_{2}$ addition on ${CF}_{4} {/O}_{2}$ remote plasma chemical dry etching of polycrystalline silicon

P. J. Matsuo; B. E. E. Kastenmeier; J. J. Beulens; G. S. Oehrlein

J. Vac. Sci. Technol. A 15, 1801–1813 (1997) https://doi.org/10.1116/1.580795

View articletitled, Role of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">N</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math> addition on <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">CF</mi><mrow><mi mathvariant="normal">4</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">/O</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math> remote plasma chemical dry etching of polycrystalline silicon

Open the PDF for in another window

Flexible fluorocarbon wire coatings by pulsed plasma enhanced chemical vapor deposition

Scott J. Limb; Karen K. Gleason; David J. Edell; Edward F. Gleason

J. Vac. Sci. Technol. A 15, 1814–1818 (1997) https://doi.org/10.1116/1.580796

Abstract

View articletitled, Flexible fluorocarbon wire coatings by pulsed plasma enhanced chemical vapor deposition

Open the PDF for in another window

Growth of very low temperature polysilicon film by remote plasma-enhanced chemical-vapor deposition

Jin-Ho Oh; Chong-Yun Park; Nam-Ihn Cho; Hyoung Gin Nam

J. Vac. Sci. Technol. A 15, 1819–1823 (1997) https://doi.org/10.1116/1.580797

Abstract

View articletitled, Growth of very low temperature polysilicon film by remote plasma-enhanced chemical-vapor deposition

Open the PDF for in another window

Highly oriented rutile-type ${TiO}_{2}$ films synthesized by ion beam enhanced deposition

Feng Zhang; Zhihong Zheng; Xingzhao Ding; Yingjun Mao; Yu Chen; Zhuyao Zhou; Shiqi Yang; Xianghuai Liu

J. Vac. Sci. Technol. A 15, 1824–1827 (1997) https://doi.org/10.1116/1.580798

Abstract

View articletitled, Highly oriented rutile-type <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">TiO</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math> films synthesized by ion beam enhanced deposition

Open the PDF for in another window

Plasma diagnostics and processings in ${CF}_{4} /He$ radio frequency discharge

N. Mutsukura; M. Shimada

J. Vac. Sci. Technol. A 15, 1828–1831 (1997) https://doi.org/10.1116/1.580799

Abstract

View articletitled, Plasma diagnostics and processings in <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">CF</mi><mrow><mi mathvariant="normal">4</mi></mrow></msub><mi mathvariant="normal" xmlns="">/He</mi></math> radio frequency discharge

Open the PDF for in another window

Some characteristics of wide gap $a- SiC:H$ films deposited by electron cyclotron resonance chemical vapor deposition using acetylene

S. F. Yoon; J. Ahn

J. Vac. Sci. Technol. A 15, 1832–1836 (1997) https://doi.org/10.1116/1.580649

Abstract

View articletitled, Some characteristics of wide gap <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">a-</mi><mi mathvariant="normal" xmlns="">SiC:H</mi></math> films deposited by electron cyclotron resonance chemical vapor deposition using acetylene

Open the PDF for in another window

Effect of reactor size on plasma polymerization of perfluoropropene

H. Y. Kim; H. K. Yasuda

J. Vac. Sci. Technol. A 15, 1837–1847 (1997) https://doi.org/10.1116/1.580650

Abstract

View articletitled, Effect of reactor size on plasma polymerization of perfluoropropene

Open the PDF for in another window

Early nitriding stage of evaporated-Ti thin films by N-ion implantation

Y. Kasukabe; S. Takeda; Y. Fiujno; Y. Yamada; S. Nagata; M. Kishimoto; S. Yamaguchi

J. Vac. Sci. Technol. A 15, 1848–1852 (1997) https://doi.org/10.1116/1.580651

Abstract

View articletitled, Early nitriding stage of evaporated-Ti thin films by N-ion implantation

Open the PDF for in another window

Kinetic study of low energy argon ion-enhanced plasma etching of polysilicon with atomic/molecular chlorine

Jane P. Chang; John C. Arnold; Gavin C. H. Zau; Hyung-Shik Shin; Herbert H. Sawin

J. Vac. Sci. Technol. A 15, 1853–1863 (1997) https://doi.org/10.1116/1.580652

Abstract

View articletitled, Kinetic study of low energy argon ion-enhanced plasma etching of polysilicon with atomic/molecular chlorine

Open the PDF for in another window

Improved current–voltage characteristics of downstream plasma enhanced chemical vapor deposition SiN_x deposited at low temperature by using He as a dilution gas

M. Arps; A. Markwitz

J. Vac. Sci. Technol. A 15, 1864–1873 (1997) https://doi.org/10.1116/1.580653

Abstract

View articletitled, Improved current–voltage characteristics of downstream plasma enhanced chemical vapor deposition SiNx deposited at low temperature by using He as a dilution gas

Open the PDF for in another window

Polysilicon-germanium gate patterning studies in a high density plasma helicon source

S. Vallon; C. Monget; O. Joubert; L. Vallier; F. H. Bell; M. Pons; J. L. Regolini; C. Morin; I. Sagnes

J. Vac. Sci. Technol. A 15, 1874–1880 (1997) https://doi.org/10.1116/1.580654

Abstract

View articletitled, Polysilicon-germanium gate patterning studies in a high density plasma helicon source

Open the PDF for in another window

Role of steady state fluorocarbon films in the etching of silicon dioxide using CHF₃ in an inductively coupled plasma reactor

N. R. Rueger; J. J. Beulens; M. Schaepkens; M. F. Doemling; J. M. Mirza; T. E. F. M. Standaert; G. S. Oehrlein

J. Vac. Sci. Technol. A 15, 1881–1889 (1997) https://doi.org/10.1116/1.580655

Abstract

View articletitled, Role of steady state fluorocarbon films in the etching of silicon dioxide using CHF3 in an inductively coupled plasma reactor

Open the PDF for in another window

Comparison of direct current and radio frequency argon magnetron discharges by optical emission and absorption spectroscopy

M. F. Dony; A. Ricard; M. Wautelet; J. P. Dauchot; M. Hecq

J. Vac. Sci. Technol. A 15, 1890–1896 (1997) https://doi.org/10.1116/1.580656

Abstract

View articletitled, Comparison of direct current and radio frequency argon magnetron discharges by optical emission and absorption spectroscopy

Open the PDF for in another window

Three-dimensional deposition of TiN film using low frequency (50 Hz) plasma chemical vapor deposition

M. Shimozuma; H. Date; T. Iwasaki; H. Tagashira; M. Yoshino; K. Yoshida

J. Vac. Sci. Technol. A 15, 1897–1901 (1997) https://doi.org/10.1116/1.580657

Abstract

View articletitled, Three-dimensional deposition of TiN film using low frequency (50 Hz) plasma chemical vapor deposition

Open the PDF for in another window

Ion-assisted etching and profile development of silicon in molecular chlorine

Joshua A. Levinson; Eric S. G. Shaqfeh; Mehdi Balooch; Alex V. Hamza

J. Vac. Sci. Technol. A 15, 1902–1912 (1997) https://doi.org/10.1116/1.580658

Abstract

View articletitled, Ion-assisted etching and profile development of silicon in molecular chlorine

Open the PDF for in another window

Integrated plasma equipment model for polysilicon etch profiles in an inductively coupled plasma reactor with subwafer and superwafer topography

Robert J. Hoekstra; Michael J. Grapperhaus; Mark J. Kushner

J. Vac. Sci. Technol. A 15, 1913–1921 (1997) https://doi.org/10.1116/1.580659

Abstract

View articletitled, Integrated plasma equipment model for polysilicon etch profiles in an inductively coupled plasma reactor with subwafer and superwafer topography

Open the PDF for in another window

Electron cyclotron resonance plasma enhanced direct current sputtering discharge with magnetic-mirror plasma confinement

M. Mišina; Y. Setsuhara; S. Miyake

J. Vac. Sci. Technol. A 15, 1922–1928 (1997) https://doi.org/10.1116/1.580660

Abstract

View articletitled, Electron cyclotron resonance plasma enhanced direct current sputtering discharge with magnetic-mirror plasma confinement

Open the PDF for in another window

Analysis of the growth processes of plasma-enhanced chemical vapor deposited diamond films from ${CO/H}_{2}$ and ${CH}_{4} {/H}_{2}$ mixtures using real-time spectroellipsometry

Joungchel Lee; R. W. Collins; Byungyou Hong; R. Messier; Y. E. Strausser

J. Vac. Sci. Technol. A 15, 1929–1936 (1997) https://doi.org/10.1116/1.580661

Abstract

View articletitled, Analysis of the growth processes of plasma-enhanced chemical vapor deposited diamond films from <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">CO/H</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math> and <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">CH</mi><mrow><mi mathvariant="normal">4</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">/H</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math> mixtures using real-time spectroellipsometry

Open the PDF for in another window

Stabilization of ${CF}_{4}$ plasma treated carbon surface by heat treated during and after plasma treatment

Yori Izumi; Kiichiro Kamata; Masaaki Katoh; Takeo Ohte; Akira Kojima

J. Vac. Sci. Technol. A 15, 1937–1942 (1997) https://doi.org/10.1116/1.580662

Abstract

View articletitled, Stabilization of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">CF</mi><mrow><mn>4</mn></mrow></msub></math> plasma treated carbon surface by heat treated during and after plasma treatment

Open the PDF for in another window

Deposition of titanium carbide films from mixed carbon and titanium plasma streams

Marie-Paule Delplancke-Ogletree; Othon R. Monteiro

J. Vac. Sci. Technol. A 15, 1943–1950 (1997) https://doi.org/10.1116/1.580663

Abstract

View articletitled, Deposition of titanium carbide films from mixed carbon and titanium plasma streams

Open the PDF for in another window

Low-temperature deposition of high-quality silicon dioxide films by sputtering-type electron cyclotron resonance plasma

H. Nakashima; K. Furukawa; Y. C. Liu; D. W. Gao; Y. Kashiwazaki; K. Muraoka; K. Shibata; T. Tsurushima

J. Vac. Sci. Technol. A 15, 1951–1954 (1997) https://doi.org/10.1116/1.580664

Abstract

View articletitled, Low-temperature deposition of high-quality silicon dioxide films by sputtering-type electron cyclotron resonance plasma

Open the PDF for in another window

Negative ion densities in chlorine- and boron trichloride-containing inductively coupled plasmas

C. B. Fleddermann; G. A. Hebner

J. Vac. Sci. Technol. A 15, 1955–1962 (1997) https://doi.org/10.1116/1.580665

Abstract

View articletitled, Negative ion densities in chlorine- and boron trichloride-containing inductively coupled plasmas

Open the PDF for in another window

Simulation of pressure effects in a multipulsed nitrogen plasma source ion implantation system

Michael J. Bear; John U. Guillory

J. Vac. Sci. Technol. A 15, 1963–1969 (1997) https://doi.org/10.1116/1.580666

Abstract

View articletitled, Simulation of pressure effects in a multipulsed nitrogen plasma source ion implantation system

Open the PDF for in another window

Carbon nitride thin films prepared by reactive sputtering: Elemental composition and structural characterization

M. M. Lacerda; D. F. Franceschini; F. L. Freire, Jr.; C. A. Achete; G. Mariotto

J. Vac. Sci. Technol. A 15, 1970–1975 (1997) https://doi.org/10.1116/1.580667

Abstract

View articletitled, Carbon nitride thin films prepared by reactive sputtering: Elemental composition and structural characterization

Open the PDF for in another window

A simplified collisional model of sputtering in the linear cascade regime

John E. Mahan; André Vantomme

J. Vac. Sci. Technol. A 15, 1976–1989 (1997) https://doi.org/10.1116/1.580668

Abstract

View articletitled, A simplified collisional model of sputtering in the linear cascade regime

Open the PDF for in another window

Effects of oxygen ion assist at 1–10 eV on growth of ${Bi}_{2} {(Sr,Ca)}_{2} {CuO}_{x}$ films at 540 °C by ion–beam sputtering

T. Endo; H. Yan; K. Abe; S. Nagase; Y. Ishida; H. Nishiku

J. Vac. Sci. Technol. A 15, 1990–1998 (1997) https://doi.org/10.1116/1.580669

Abstract

View articletitled, Effects of oxygen ion assist at 1–10 eV on growth of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Bi</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">(Sr,Ca)</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">CuO</mi><mrow><mi>x</mi></mrow></msub></math> films at 540 °C by ion–beam sputtering

Open the PDF for in another window

Planar magnetron sputtering discharge enhanced with radio frequency or microwave magnetoactive plasma

J. Musil; M. Mišina; D. Hovorka

J. Vac. Sci. Technol. A 15, 1999–2006 (1997) https://doi.org/10.1116/1.580670

Abstract

View articletitled, Planar magnetron sputtering discharge enhanced with radio frequency or microwave magnetoactive plasma

Open the PDF for in another window

Reactive sputtering of titanium diboride and titanium disilicide

L. Maya; C. E. Vallet; J. N. Fiedor

J. Vac. Sci. Technol. A 15, 2007–2012 (1997) https://doi.org/10.1116/1.580671

Abstract

View articletitled, Reactive sputtering of titanium diboride and titanium disilicide

Open the PDF for in another window

Method for the study of grain boundary diffusion effects by Auger electron spectroscopy sputter depth profiling

Y. S. Lee; K. Y. Lim; Y. D. Chung; C. N. Whang; J. J. Woo; Y. P. Lee

J. Vac. Sci. Technol. A 15, 2013–2016 (1997) https://doi.org/10.1116/1.580672

Abstract

View articletitled, Method for the study of grain boundary diffusion effects by Auger electron spectroscopy sputter depth profiling

Open the PDF for in another window

Morphology-dependent oxidation behavior of reactively sputtered titanium–nitride films

Kenji Hinode; Yoshio Homma; Mitsuaki Horiuchi; Toshikazu Takahashi

J. Vac. Sci. Technol. A 15, 2017–2022 (1997) https://doi.org/10.1116/1.580673

Abstract

View articletitled, Morphology-dependent oxidation behavior of reactively sputtered titanium–nitride films

Open the PDF for in another window

Particle contamination formation in magnetron sputtering processes

Gary S. Selwyn; Corey A. Weiss; Federico Sequeda; Carrie Huang

J. Vac. Sci. Technol. A 15, 2023–2028 (1997) https://doi.org/10.1116/1.580674

Abstract

View articletitled, Particle contamination formation in magnetron sputtering processes

Open the PDF for in another window

X-ray photoelectron spectroscopy study of TiC films grown by annealing thin Ti films on graphite

S. Miller; G. L. P. Berning; H. Plank; J. Roth

J. Vac. Sci. Technol. A 15, 2029–2034 (1997) https://doi.org/10.1116/1.580675

Abstract

View articletitled, X-ray photoelectron spectroscopy study of TiC films grown by annealing thin Ti films on graphite

Open the PDF for in another window

Pulse-modulated infrared-laser interferometric thermometry for non-contact silicon substrate temperature measurement

Jun Kikuchi; Shuzo Fujimura; Ryo Kurosaki; Hiroshi Yano

J. Vac. Sci. Technol. A 15, 2035–2042 (1997) https://doi.org/10.1116/1.580676

Abstract

View articletitled, Pulse-modulated infrared-laser interferometric thermometry for non-contact silicon substrate temperature measurement

Open the PDF for in another window

Preparation of GaSb(100) surfaces by ultraviolet irradiation

N. Bertru; M. Nouaoura; J. Bonnet; L. Lassabatere; E. Bedel; M. Mamy

J. Vac. Sci. Technol. A 15, 2043–2050 (1997) https://doi.org/10.1116/1.580606

Abstract

View articletitled, Preparation of GaSb(100) surfaces by ultraviolet irradiation

Open the PDF for in another window

Oxygen fixing on Cu due to electron-beam damage during Auger spectroscopy

J. M. Heras; L. Viscido

J. Vac. Sci. Technol. A 15, 2051–2057 (1997) https://doi.org/10.1116/1.580607

Abstract

View articletitled, Oxygen fixing on Cu due to electron-beam damage during Auger spectroscopy

Open the PDF for in another window

X-ray photoemission analysis of chemically treated I–III–VI semiconductor surfaces

A. J. Nelson; C. R. Schwerdtfeger; G. C. Herdt; D. King; M. Contreras; K. Ramanathan; W. L. O’Brien

J. Vac. Sci. Technol. A 15, 2058–2062 (1997) https://doi.org/10.1116/1.580608

Abstract

View articletitled, X-ray photoemission analysis of chemically treated I–III–VI semiconductor surfaces

Open the PDF for in another window

Mapping of ${Al}_{x} {Ga}_{1−x} As$ band edges by ballistic electron emission spectroscopy

X.-C. Cheng; D. A. Collins; T. C. McGill

J. Vac. Sci. Technol. A 15, 2063–2068 (1997) https://doi.org/10.1116/1.580609

Abstract

View articletitled, Mapping of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Al</mi><mrow><mi>x</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ga</mi><mrow><mtext>1−x</mtext></mrow></msub><mi mathvariant="normal" xmlns="">As</mi></math> band edges by ballistic electron emission spectroscopy

Open the PDF for in another window

Use of laser reflectometry for end-point detection during the etching of magnetic thin films

B. Khamsehpour; C. D. W. Wilkinson; J. N. Chapman

J. Vac. Sci. Technol. A 15, 2069–2073 (1997) https://doi.org/10.1116/1.580610

Abstract

View articletitled, Use of laser reflectometry for end-point detection during the etching of magnetic thin films

Open the PDF for in another window

Formation of the Cs/GaAs(001) interface: Work function, cesium sticking coefficient, and surface optical anisotropy

B. Kierren; D. Paget

J. Vac. Sci. Technol. A 15, 2074–2080 (1997) https://doi.org/10.1116/1.580611

Abstract

View articletitled, Formation of the Cs/GaAs(001) interface: Work function, cesium sticking coefficient, and surface optical anisotropy

Open the PDF for in another window

Transient charging and slow trapping in ultrathin ${SiO}_{2}$ films on Si during electron bombardment

N. Shamir; J. G. Mihaychuk; H. M. van Driel

J. Vac. Sci. Technol. A 15, 2081–2084 (1997) https://doi.org/10.1116/1.580612

Abstract

View articletitled, Transient charging and slow trapping in ultrathin <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SiO</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math> films on Si during electron bombardment

Open the PDF for in another window

X-ray absorption spectroscopy study of different solid carbon modifications

P. R. Bressler; M. Lübbe; D. R. T. Zahn; W. Braun

J. Vac. Sci. Technol. A 15, 2085–2087 (1997) https://doi.org/10.1116/1.580613

Abstract

View articletitled, X-ray absorption spectroscopy study of different solid carbon modifications

Open the PDF for in another window

Fabrication and characterization of graded refractive index silicon oxynitride thin films

S. Callard; A. Gagnaire; J. Joseph

J. Vac. Sci. Technol. A 15, 2088–2094 (1997) https://doi.org/10.1116/1.580614

Abstract

View articletitled, Fabrication and characterization of graded refractive index silicon oxynitride thin films

Open the PDF for in another window

Evaluation of correction parameters for elastic-scattering effects in x-ray photoelectron spectroscopy and Auger electron spectroscopy

A. Jablonski; C. J. Powell

J. Vac. Sci. Technol. A 15, 2095–2106 (1997) https://doi.org/10.1116/1.580615

Abstract

View articletitled, Evaluation of correction parameters for elastic-scattering effects in x-ray photoelectron spectroscopy and Auger electron spectroscopy

Open the PDF for in another window

Chemistry of actinide and lanthanide metal ions $(M^{+})$ in laser ablation of dispersions of inorganic compounds in polyimide and polytetrafluoroethylene

John K. Gibson

J. Vac. Sci. Technol. A 15, 2107–2118 (1997) https://doi.org/10.1116/1.580616

Abstract

View articletitled, Chemistry of actinide and lanthanide metal ions <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">(</mi><msup xmlns=""><mi mathvariant="normal">M</mi><mrow><mi mathvariant="normal">+</mi></mrow></msup><mi xmlns="">)</mi></math> in laser ablation of dispersions of inorganic compounds in polyimide and polytetrafluoroethylene

Open the PDF for in another window

Electron energy-loss spectroscopy of $({DMe–DCNQI)}_{2} Cu$

Michihiro Mochida; Toshihiro Shimada; Atsushi Koma

J. Vac. Sci. Technol. A 15, 2119–2121 (1997) https://doi.org/10.1116/1.580617

Abstract

View articletitled, Electron energy-loss spectroscopy of <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">(</mi><msub xmlns=""><mi mathvariant="normal">DMe–DCNQI)</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><mi mathvariant="normal" xmlns="">Cu</mi></math>

Open the PDF for in another window

High-resolution algorithm for quantitative elemental depth profiling by angle-resolved x-ray photoelectron spectroscopy

John M. Williams; Thomas P. Beebe, Jr.

J. Vac. Sci. Technol. A 15, 2122–2133 (1997) https://doi.org/10.1116/1.580618

Abstract

View articletitled, High-resolution algorithm for quantitative elemental depth profiling by angle-resolved x-ray photoelectron spectroscopy

Open the PDF for in another window

Laser single-photon ionization mass spectrometry measurements of SiCl and ${SiCl}_{2}$ during thermal etching of Si(100)

N. Materer; Rory S. Goodman; Stephen R. Leone

J. Vac. Sci. Technol. A 15, 2134–2142 (1997) https://doi.org/10.1116/1.580619

Abstract

View articletitled, Laser single-photon ionization mass spectrometry measurements of SiCl and <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SiCl</mi><mrow><mn>2</mn></mrow></msub></math> during thermal etching of Si(100)

Open the PDF for in another window

Analysis of the x-ray photoelectron spectrum of Teflon AF 1600

E. Sacher; J. E. Klemberg-Sapieha

J. Vac. Sci. Technol. A 15, 2143–2147 (1997) https://doi.org/10.1116/1.580620

Abstract

View articletitled, Analysis of the x-ray photoelectron spectrum of Teflon AF 1600

Open the PDF for in another window

Engineered sculptured nematic thin films

R. Messier; T. Gehrke; C. Frankel; V. C. Venugopal; W. Otaño; A. Lakhtakia

J. Vac. Sci. Technol. A 15, 2148–2152 (1997) https://doi.org/10.1116/1.580621

Abstract

View articletitled, Engineered sculptured nematic thin films

Open the PDF for in another window

Extended-spectral-range Fourier transform infrared-attenuated total reflection spectroscopy on Si surfaces using a novel Si coated Ge attenuated total reflection prism

E. Rudkevich; D. E. Savage; W. Cai; J. C. Bean; J. S. Sullivan; S. Nayak; T. F. Kuech; L. McCaughan; M. G. Lagally

J. Vac. Sci. Technol. A 15, 2153–2157 (1997) https://doi.org/10.1116/1.580622

Abstract

View articletitled, Extended-spectral-range Fourier transform infrared-attenuated total reflection spectroscopy on Si surfaces using a novel Si coated Ge attenuated total reflection prism

Open the PDF for in another window

Optimization of niobium thin films by experimental design

S. Knappe; C. Elster; H. Koch

J. Vac. Sci. Technol. A 15, 2158–2166 (1997) https://doi.org/10.1116/1.580528

Abstract

View articletitled, Optimization of niobium thin films by experimental design

Open the PDF for in another window

Microstructure, composition, and optical properties of ${PbTiO}_{3}$ thin films prepared by the sol-gel method

C. J. Lu; S. B. Ren; H. M. Shen; J. S. Liu; Y. N. Wang

J. Vac. Sci. Technol. A 15, 2167–2172 (1997) https://doi.org/10.1116/1.580530

Abstract

View articletitled, Microstructure, composition, and optical properties of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">PbTiO</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub></math> thin films prepared by the sol-gel method

Open the PDF for in another window

Orientation and order in microcontact-printed, self-assembled monolayers of alkanethiols on gold investigated with near edge x-ray absorption fine structure spectroscopy

Dorothee Fischer; Andreas Marti; Georg Hähner

J. Vac. Sci. Technol. A 15, 2173–2180 (1997) https://doi.org/10.1116/1.580529

Abstract

View articletitled, Orientation and order in microcontact-printed, self-assembled monolayers of alkanethiols on gold investigated with near edge x-ray absorption fine structure spectroscopy

Open the PDF for in another window

Decomposition of $B_{2} H_{6}$ on Ni(100)

Ryan M. Desrosiers; David W. Greve; Andrew J. Gellman

J. Vac. Sci. Technol. A 15, 2181–2189 (1997) https://doi.org/10.1116/1.580531

Abstract

View articletitled, Decomposition of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">B</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">H</mi><mrow><mi mathvariant="normal">6</mi></mrow></msub></math> on Ni(100)

Open the PDF for in another window

Growth and characterization of silicon thin films employing supersonic jets

K. A. Pacheco; B. A. Ferguson; C. B. Mullins

J. Vac. Sci. Technol. A 15, 2190–2195 (1997) https://doi.org/10.1116/1.580532

Abstract

View articletitled, Growth and characterization of silicon thin films employing supersonic jets

Open the PDF for in another window

Characterization of carbon and carbon nitride thin films using time-of-flight secondary-ion-mass spectrometry

L. J. Huang; Y. Hung; S. Chang; G. R. Massoumi; W. N. Lennard; I. V. Mitchell

J. Vac. Sci. Technol. A 15, 2196–2201 (1997) https://doi.org/10.1116/1.580533

Abstract

View articletitled, Characterization of carbon and carbon nitride thin films using time-of-flight secondary-ion-mass spectrometry

Open the PDF for in another window

Anodic fluoride on HgMnTe

Sun Weiguo; L. A. Kosyachenko; I. M. Rarenko

J. Vac. Sci. Technol. A 15, 2202–2206 (1997) https://doi.org/10.1116/1.580534

Abstract

View articletitled, Anodic fluoride on HgMnTe

Open the PDF for in another window

Growth of gallium nitride thin films by liquid-target pulsed laser deposition

R. F. Xiao; X. W. Sun; Z. F. Li; N. Cue; H. S. Kwok; Q. Z. Liu; S. S. Lau

J. Vac. Sci. Technol. A 15, 2207–2213 (1997) https://doi.org/10.1116/1.580535

Abstract

View articletitled, Growth of gallium nitride thin films by liquid-target pulsed laser deposition

Open the PDF for in another window

Atomic layer epitaxy growth of aluminum oxide thin films from a novel ${Al(CH}_{3})_{2} Cl$ precursor and $H_{2} O$

Kaupo Kukli; Mikko Ritala; Markku Leskelä; Janne Jokinen

J. Vac. Sci. Technol. A 15, 2214–2218 (1997) https://doi.org/10.1116/1.580536

Abstract

Open the PDF for in another window

Silicon epitaxy from pulsed supersonic jets: Growth, modeling, and simulation

Rajeev Malik; Erdogan Guljari

J. Vac. Sci. Technol. A 15, 2219–2225 (1997) https://doi.org/10.1116/1.580537

Abstract

View articletitled, Silicon epitaxy from pulsed supersonic jets: Growth, modeling, and simulation

Open the PDF for in another window

Growth mechanism of 3C–SiC(111) films on Si using tetramethylsilane by rapid thermal chemical vapor deposition

Y. H. Seo; K. S. Nahm; E.-K. Suh; H. J. Lee; Y. G. Hwang

J. Vac. Sci. Technol. A 15, 2226–2233 (1997) https://doi.org/10.1116/1.580538

Abstract

View articletitled, Growth mechanism of 3C–SiC(111) films on Si using tetramethylsilane by rapid thermal chemical vapor deposition

Open the PDF for in another window

Adhesion improvement between Au films and glass by 1 keV ${Ar}^{+}$ ion irradiation

H. G. Jang; K. H. Kim; S. Han; W. K. Choi; H.-J. Jung; S. K. Koh; H. B. Kim

J. Vac. Sci. Technol. A 15, 2234–2237 (1997) https://doi.org/10.1116/1.580539

Abstract

View articletitled, Adhesion improvement between Au films and glass by 1 keV <math xmlns="http://www.w3.org/1998/Math/MathML"><msup xmlns=""><mi mathvariant="normal">Ar</mi><mrow><mi mathvariant="normal">+</mi></mrow></msup></math> ion irradiation

Open the PDF for in another window

Generation of intense, hexapole-selected, supersonic beams of fluorocarbon radicals: CF, CF₂, and CF₃

Michael A. Weibel; Toby D. Hain; Thomas J. Curtiss

J. Vac. Sci. Technol. A 15, 2238–2246 (1997) https://doi.org/10.1116/1.580540

Abstract

View articletitled, Generation of intense, hexapole-selected, supersonic beams of fluorocarbon radicals: CF, CF2, and CF3

Open the PDF for in another window

Tunable diode laser spectroscopy measurement of ${CH}_{3}$ and $C_{2} H_{2}$ densities in a $H_{2} {O/CH}_{3} OH$ radio frequency chemical vapor deposition diamond system

Suchan Kim; D. P. Billesbach; R. Dillon

J. Vac. Sci. Technol. A 15, 2247–2251 (1997) https://doi.org/10.1116/1.580541

Abstract

Open the PDF for in another window

Molecular dynamics simulations of fluorosilyl species impacting fluorinated silicon surfaces with energies from 0.1 to 100 eV

B. A. Helmer; D. B. Graves

J. Vac. Sci. Technol. A 15, 2252–2261 (1997) https://doi.org/10.1116/1.580542

Abstract

View articletitled, Molecular dynamics simulations of fluorosilyl species impacting fluorinated silicon surfaces with energies from 0.1 to 100 eV

Open the PDF for in another window

Comparison of microstructural features of diamond composite coatings with polycrystalline diamond or boron nitride brazed on tungsten carbide tools

K. Jagannadham; N. D. Fan; R. Komanduri; J. Narayan

J. Vac. Sci. Technol. A 15, 2262–2275 (1997) https://doi.org/10.1116/1.580733

Abstract

View articletitled, Comparison of microstructural features of diamond composite coatings with polycrystalline diamond or boron nitride brazed on tungsten carbide tools

Open the PDF for in another window

Transmission through the quadrupole mass spectrometer mass filter: The effect of aperture and harmonics

A. C. C. Voo; R. Ng; J. J. Tunstall; S. Taylor

J. Vac. Sci. Technol. A 15, 2276–2281 (1997) https://doi.org/10.1116/1.580734

Abstract

View articletitled, Transmission through the quadrupole mass spectrometer mass filter: The effect of aperture and harmonics

Open the PDF for in another window

Characterization of defect levels in chemically deposited CdS films in the cubic-to-hexagonal phase transition

O. Vigil; I. Riech; M. Garcia-Rocha; O. Zelaya-Angel

J. Vac. Sci. Technol. A 15, 2282–2286 (1997) https://doi.org/10.1116/1.580735

Abstract

View articletitled, Characterization of defect levels in chemically deposited CdS films in the cubic-to-hexagonal phase transition

Open the PDF for in another window

Magnetic dichroism effect of binary alloys using a circularly polarized x ray

S. Z. Wu; F. O. Schumann; R. F. Willis; K. W. Goodman; J. G. Tobin; R. Carr

J. Vac. Sci. Technol. A 15, 2287–2290 (1997) https://doi.org/10.1116/1.580736

Abstract

View articletitled, Magnetic dichroism effect of binary alloys using a circularly polarized x ray

Open the PDF for in another window

Structural characterization of a Mo/Si multilayer reflector by means of x-ray diffraction measurements

Dong-Eon Kim; Dong-Ho Cha; Sang-Won Lee

J. Vac. Sci. Technol. A 15, 2291–2296 (1997) https://doi.org/10.1116/1.580737

Abstract

View articletitled, Structural characterization of a Mo/Si multilayer reflector by means of x-ray diffraction measurements

Open the PDF for in another window

Physical properties of dual ion beam deposited $(B_{0.5−x} {Si}_{x}) N_{0.5}$ films

X.-A. Zhao; C. W. Ong; K. F. Chan; Y. M. Ng; Y. C. Tsang; C. L. Choy; P. W. Chan

J. Vac. Sci. Technol. A 15, 2297–2306 (1997) https://doi.org/10.1116/1.580738

Abstract

View articletitled, Physical properties of dual ion beam deposited <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">(</mi><msub xmlns=""><mi mathvariant="normal">B</mi><mrow><mtext>0.5−x</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Si</mi><mrow><mi>x</mi></mrow></msub><mi xmlns="">)</mi><msub xmlns=""><mi mathvariant="normal">N</mi><mrow><mi mathvariant="normal">0.5</mi></mrow></msub></math> films

Open the PDF for in another window

Axially-resolved study of highly ionized physical vapor deposition

M. Dickson; J. Hopwood

J. Vac. Sci. Technol. A 15, 2307–2312 (1997) https://doi.org/10.1116/1.580739

Abstract

View articletitled, Axially-resolved study of highly ionized physical vapor deposition

Open the PDF for in another window

Fe–N gradient films and epitaxial ${Fe}_{16} N_{2}$ single-crystal films

M. B. Tian; E. Y. Jiang; D. C. Sun

J. Vac. Sci. Technol. A 15, 2313–2317 (1997) https://doi.org/10.1116/1.580740

Abstract

View articletitled, Fe–N gradient films and epitaxial <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Fe</mi><mrow><mi mathvariant="normal">16</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">N</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math> single-crystal films

Open the PDF for in another window

Characterization of the ion-plated TiN on AISI 304 stainless steel by energy filtering transmission electron microscopy

F. S. Shieu; L. H. Cheng; Y. C. Sung; J. H. Huang; G. P. Yu

J. Vac. Sci. Technol. A 15, 2318–2322 (1997) https://doi.org/10.1116/1.580741

Abstract

View articletitled, Characterization of the ion-plated TiN on AISI 304 stainless steel by energy filtering transmission electron microscopy

Open the PDF for in another window

Crystallinity and texture promotion in ${WS}_{2}$ thin films

M. Regula; C. Ballif; M. Remškar; F. Lévy

J. Vac. Sci. Technol. A 15, 2323–2329 (1997) https://doi.org/10.1116/1.580742

Abstract

View articletitled, Crystallinity and texture promotion in <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">WS</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math> thin films

Open the PDF for in another window

Deposition of copper films by an alternate supply of CuCl and Zn

Marika Juppo; Mikko Ritala; Markku Leskelä

J. Vac. Sci. Technol. A 15, 2330–2333 (1997) https://doi.org/10.1116/1.580743

Abstract

View articletitled, Deposition of copper films by an alternate supply of CuCl and Zn

Open the PDF for in another window

Comparative effects of adatom evaporation and ad-dimer diffusion for Si on Si(100)-2×1

J. L. Iguain; H. O. Mártin; C. M. Aldao

J. Vac. Sci. Technol. A 15, 2334–2338 (1997) https://doi.org/10.1116/1.580744

Abstract

View articletitled, Comparative effects of adatom evaporation and ad-dimer diffusion for Si on Si(100)-2×1

Open the PDF for in another window

Effects of Nd content in Al thin films on hillock formation

Takashi Onishi; Eiji Iwamura; Katsutoshi Takagi; Takashi Watanabe

J. Vac. Sci. Technol. A 15, 2339–2348 (1997) https://doi.org/10.1116/1.580745

Abstract

View articletitled, Effects of Nd content in Al thin films on hillock formation

Open the PDF for in another window

Degradation of ZnS field-emission display phosphors during electron-beam bombardment

J. S. Sebastian; H. C. Swart; T. A. Trottier; S. L. Jones; P. H. Holloway

J. Vac. Sci. Technol. A 15, 2349–2353 (1997) https://doi.org/10.1116/1.580746

Abstract

View articletitled, Degradation of ZnS field-emission display phosphors during electron-beam bombardment

Open the PDF for in another window

Characterization of heat-treated ITO/InP solar cells

Y. Rosenwaks; X. Li; T. J. Coutts

J. Vac. Sci. Technol. A 15, 2354–2358 (1997) https://doi.org/10.1116/1.580747

Abstract

View articletitled, Characterization of heat-treated ITO/InP solar cells

Open the PDF for in another window

Comparison of bromine etching of polycrystalline and single crystal Cu surfaces

C. Y. Nakakura; E. I. Altman

J. Vac. Sci. Technol. A 15, 2359–2368 (1997) https://doi.org/10.1116/1.580748

Abstract

View articletitled, Comparison of bromine etching of polycrystalline and single crystal Cu surfaces

Open the PDF for in another window

Proposal for a new self-focusing configuration involving porous silicon for field emission flat panel displays

Dan Nicolaescu; Valeriu Filip; Fumio Okuyama

J. Vac. Sci. Technol. A 15, 2369–2374 (1997) https://doi.org/10.1116/1.580749

Abstract

View articletitled, Proposal for a new self-focusing configuration involving porous silicon for field emission flat panel displays

Open the PDF for in another window

Slip coefficients for binary gas mixtures

I. N. Ivchenko; S. K. Loyalka; R. V. Tompson

J. Vac. Sci. Technol. A 15, 2375–2381 (1997) https://doi.org/10.1116/1.580750

Abstract

View articletitled, Slip coefficients for binary gas mixtures

Open the PDF for in another window

Characterization of a solid fluorocarbon film on magnetic recording media

T. E. Karis; G. W. Tyndall; D. Fenzel-Alexander; M. S. Crowder

J. Vac. Sci. Technol. A 15, 2382–2387 (1997) https://doi.org/10.1116/1.580751

Abstract

View articletitled, Characterization of a solid fluorocarbon film on magnetic recording media

Open the PDF for in another window

Mirror-finished, surface-seal-type gate valve with a long life of about $10^{4}$ cycles

M. Satou; T. Momose; K. Tamura; H. Ishimaru

J. Vac. Sci. Technol. A 15, 2388–2390 (1997) https://doi.org/10.1116/1.580752

Abstract

View articletitled, Mirror-finished, surface-seal-type gate valve with a long life of about <math xmlns="http://www.w3.org/1998/Math/MathML"><msup xmlns=""><mn>10</mn><mrow><mn>4</mn></mrow></msup></math> cycles

Open the PDF for in another window

Spinning rotor gauge in the range from $10^{−4}$ to atmospheric pressure

C. Boffito; M. Moraja; G. Pastore

J. Vac. Sci. Technol. A 15, 2391–2394 (1997) https://doi.org/10.1116/1.580753

Abstract

View articletitled, Spinning rotor gauge in the range from <math xmlns="http://www.w3.org/1998/Math/MathML"><msup xmlns=""><mn>10</mn><mrow><mtext>−4</mtext></mrow></msup></math> to atmospheric pressure

Open the PDF for in another window

Comparison of the standards for high and ultrahigh vacuum at three national standards laboratories

K. Jousten; A. R. Filippelli; C. R. Tilford; F. J. Redgrave

J. Vac. Sci. Technol. A 15, 2395–2406 (1997) https://doi.org/10.1116/1.580754

Abstract

View articletitled, Comparison of the standards for high and ultrahigh vacuum at three national standards laboratories

Open the PDF for in another window

Quartz crystal microbalance: A new design eliminates sensitivity outside the electrodes, often wrongly attributed to the electric fringing field

Peter J. Cumpson

J. Vac. Sci. Technol. A 15, 2407–2412 (1997) https://doi.org/10.1116/1.580755

Abstract

View articletitled, Quartz crystal microbalance: A new design eliminates sensitivity outside the electrodes, often wrongly attributed to the electric fringing field

Open the PDF for in another window

Study of distributed ion pumps in the Cornell Electron Storage Ring

Yulin Li; Roberto Kersevan; Nariman Mistry

J. Vac. Sci. Technol. A 15, 2413–2417 (1997) https://doi.org/10.1116/1.580756

Abstract

View articletitled, Study of distributed ion pumps in the Cornell Electron Storage Ring

Open the PDF for in another window

Recombination at the silicon nitride/silicon interface

J. R. Elmiger; R. Schieck; M. Kunst

J. Vac. Sci. Technol. A 15, 2418–2425 (1997) https://doi.org/10.1116/1.580757

Abstract

View articletitled, Recombination at the silicon nitride/silicon interface

Open the PDF for in another window

Molecular beam epitaxy of p-type ZnSSe using a nitric oxide plasma source

P. Uusimaa; K. Rakennus; A. Salokatve; M. Pessa; J. Likonen

J. Vac. Sci. Technol. A 15, 2426–2427 (1997) https://doi.org/10.1116/1.580758

View articletitled, Molecular beam epitaxy of p-type ZnSSe using a nitric oxide plasma source

Open the PDF for in another window

How to distinguish the Raman modes of epitaxial GaN with phonon features from sapphire substrate—Comments on “Optical properties of GaN film grown by metalorganic chemical vapor deposition” [J. Vac. Sci. Technol. A 14, 840 (1996)]

Zhe Chuan Feng; Matthew Schurman; Richard A. Stall

J. Vac. Sci. Technol. A 15, 2428–2430 (1997) https://doi.org/10.1116/1.580759

Abstract

View articletitled, How to distinguish the Raman modes of epitaxial GaN with phonon features from sapphire substrate—Comments on “Optical properties of GaN film grown by metalorganic chemical vapor deposition” [J. Vac. Sci. Technol. A 14, 840 (1996)]

Open the PDF for in another window

On the relation between preferential emission and bulk composition in binary alloy sputtering

Li-Ping Zheng; Ri-Sheng Li; Shu-You Li

J. Vac. Sci. Technol. A 15, 2431–2433 (1997) https://doi.org/10.1116/1.580760

Abstract

View articletitled, On the relation between preferential emission and bulk composition in binary alloy sputtering

Open the PDF for in another window

Rarefied gas flow through a long tube at arbitrary pressure and temperature drops

Felix Sharipov

J. Vac. Sci. Technol. A 15, 2434–2436 (1997) https://doi.org/10.1116/1.580904

Abstract

View articletitled, Rarefied gas flow through a long tube at arbitrary pressure and temperature drops

Open the PDF for in another window

Measurements of current transport in metal/ ${Si}_{1−x} {Ge}_{x}$ Schottky diodes

L. He; Z. Q. Shi

J. Vac. Sci. Technol. A 15, 2437–2440 (1997) https://doi.org/10.1116/1.580903

Abstract

View articletitled, Measurements of current transport in metal/<math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Si</mi><mrow><mtext>1−x</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ge</mi><mrow><mi>x</mi></mrow></msub></math> Schottky diodes

Open the PDF for in another window

Comparison of initial oxidation of Si(111)7×7 with ozone and oxygen investigated by second harmonic generation

Ken Nakamura; Akira Kurokawa; Shingo Ichimura

J. Vac. Sci. Technol. A 15, 2441–2445 (1997) https://doi.org/10.1116/1.580905

Abstract

View articletitled, Comparison of initial oxidation of Si(111)7×7 with ozone and oxygen investigated by second harmonic generation

Open the PDF for in another window

Orientation of vacuum–evaporated ${BaF}_{2}$ films in the presence of nitrogen

Parthasarathi Sircar; Norman G. LeBret

J. Vac. Sci. Technol. A 15, 2446–2448 (1997) https://doi.org/10.1116/1.580906

Abstract

View articletitled, Orientation of vacuum–evaporated <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">BaF</mi><mrow><mn>2</mn></mrow></msub></math> films in the presence of nitrogen

Open the PDF for in another window

High vacuum co-evaporator for thin film deposition of molecular organic conductors

J. Fraxedas; J. Caro; A. Figueras

J. Vac. Sci. Technol. A 15, 2449–2451 (1997) https://doi.org/10.1116/1.580907

View articletitled, High vacuum co-evaporator for thin film deposition of molecular organic conductors

Open the PDF for in another window

Improved design for an aluminum evaporator

H.-G. Keck; E. Kopatzki; R. J. Behm

J. Vac. Sci. Technol. A 15, 2452–2454 (1997) https://doi.org/10.1116/1.580908

Abstract

View articletitled, Improved design for an aluminum evaporator

Open the PDF for in another window

Erratum: Effects of readsorption on outgassing rate measurements [J. Vac. Sci. Technol. A 14, 2599 (1996)]

P. A. Redhead

J. Vac. Sci. Technol. A 15, 2455 (1997) https://doi.org/10.1116/1.580909

View articletitled, Erratum: Effects of readsorption on outgassing rate measurements [J. Vac. Sci. Technol. A 14, 2599 (1996)]

Open the PDF for in another window

Erratum: Relative sensitivity factors of B related to SiGe alloy composition on secondary ion mass spectrometry with an oxygen primary ion beam [J. Vac. Sci. Technol. A 14, 2361 (1996)]

Kiyohisa Fujinaga

J. Vac. Sci. Technol. A 15, 2456 (1997) https://doi.org/10.1116/1.580910

View articletitled, Erratum: Relative sensitivity factors of B related to SiGe alloy composition on secondary ion mass spectrometry with an oxygen primary ion beam [J. Vac. Sci. Technol. A 14, 2361 (1996)]

Open the PDF for in another window

Issues

RSS

Resources

Explore

pubs.aip.org

Connect with AIP Publishing

This Feature Is Available To Subscribers Only