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Silicon surfaces treated by ${CF}_{4}$ ⁠, ${CF}_{4} {/H}_{2}$ ⁠, and ${CF}_{4} {/O}_{2}$ rf plasmas: Study by in situ Fourier transform infrared ellipsometry

Tatsuru Shirafuji; Winfred W. Stoffels; Hiroshi Moriguchi; Kunihide Tachibana

J. Vac. Sci. Technol. A 15, 209–215 (1997) https://doi.org/10.1116/1.580514

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Real-time diagnostics of II–VI molecular beam epitaxy by spectral ellipsometry

W. M. Duncan; M. J. Bevan; H. D. Shih

J. Vac. Sci. Technol. A 15, 216–222 (1997) https://doi.org/10.1116/1.580515

Abstract

View articletitled, Real-time diagnostics of II–VI molecular beam epitaxy by spectral ellipsometry

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Study of TiO_xN_y thin film selective surfaces produced by ion assisted deposition

A. Bittar; D. Cochrane; S. Caughley; I. Vickeridge

J. Vac. Sci. Technol. A 15, 223–229 (1997) https://doi.org/10.1116/1.580516

Abstract

View articletitled, Study of TiOxNy thin film selective surfaces produced by ion assisted deposition

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Two-dimensional imaging of ${CF}_{2}$ density by laser-induced fluorescence in ${CF}_{4}$ etching plasmas in the gaseous electronics conference reference cell

Brian K. McMillin; Michael R. Zachariah

J. Vac. Sci. Technol. A 15, 230–237 (1997) https://doi.org/10.1116/1.580517

Abstract

View articletitled, Two-dimensional imaging of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">CF</mi><mrow><mn>2</mn></mrow></msub></math> density by laser-induced fluorescence in <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">CF</mi><mrow><mn>4</mn></mrow></msub></math> etching plasmas in the gaseous electronics conference reference cell

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Sputtered gold films for surface-enhanced Raman scattering

L. Maya; C. E. Vallet; Y. H. Lee

J. Vac. Sci. Technol. A 15, 238–242 (1997) https://doi.org/10.1116/1.580518

Abstract

View articletitled, Sputtered gold films for surface-enhanced Raman scattering

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Sputtering investigation of boron nitride with secondary ion and secondary neutral mass spectrometry

J. Zhang; S. Bhattacharjee; V. Shutthanandan; P. K. Ray

J. Vac. Sci. Technol. A 15, 243–247 (1997) https://doi.org/10.1116/1.580519

Abstract

View articletitled, Sputtering investigation of boron nitride with secondary ion and secondary neutral mass spectrometry

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Studies of reactive sputtering of multi-phase chromium nitride

T. Nyberg; P. Skytt; B. Gålnander; C. Nender; J. Nordgren; S. Berg

J. Vac. Sci. Technol. A 15, 248–252 (1997) https://doi.org/10.1116/1.580520

Abstract

View articletitled, Studies of reactive sputtering of multi-phase chromium nitride

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Transmission electron microscopy of the sequence of phase formation in the interfacial solid-phase reactions in Ta/Si systems

Atsushi Noya; Mayumi Takeyama; Katsutaka Sasaki; Eiji Aoyagi; Kenji Hiraga

J. Vac. Sci. Technol. A 15, 253–257 (1997) https://doi.org/10.1116/1.580521

Abstract

View articletitled, Transmission electron microscopy of the sequence of phase formation in the interfacial solid-phase reactions in Ta/Si systems

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Experimental study on the scaling law of the outgassing rate with a pumping parameter

K. Akaishi; Y. Kubota; O. Motojima; M. Nakasuga; Y. Funato; M. Mushiaki

J. Vac. Sci. Technol. A 15, 258–264 (1997) https://doi.org/10.1116/1.580522

Abstract

View articletitled, Experimental study on the scaling law of the outgassing rate with a pumping parameter

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Adsorption isotherms of He and H₂ at liquid He temperatures

E. Wallén

J. Vac. Sci. Technol. A 15, 265–274 (1997) https://doi.org/10.1116/1.580523

Abstract

View articletitled, Adsorption isotherms of He and H2 at liquid He temperatures

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Crystallographic and microstructural studies of BaTiO₃ thin films grown on SrTiO₃ by laser molecular beam epitaxy

Da-Fu Cui; Hui-Sheng Wang; Zheng-Hao Chen; Yue-Liang Zhou; Hui-Bin Lu; Guo-Zhen Yang; Kun Ma; Hong Chen; Lin Li; Wei Liu; Yun Zhang

J. Vac. Sci. Technol. A 15, 275–278 (1997) https://doi.org/10.1116/1.580524

Abstract

View articletitled, Crystallographic and microstructural studies of BaTiO3 thin films grown on SrTiO3 by laser molecular beam epitaxy

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Comparison of low-temperature oxidation of crystalline Si and B with a-Si:B alloy: An x-ray photoelectron spectroscopy study

G.-R. Yang; Y.-P. Zhao; M. Abburi; S. Dabral; B. Y. Tong

J. Vac. Sci. Technol. A 15, 279–283 (1997) https://doi.org/10.1116/1.580525

Abstract

View articletitled, Comparison of low-temperature oxidation of crystalline Si and B with a-Si:B alloy: An x-ray photoelectron spectroscopy study

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Combined x-ray photoelectron/Auger electron spectroscopy/glancing angle x-ray diffraction/extended x-ray absorption fine structure investigation of TiB_xN_y coatings

M. A. Baker; T. P. Mollart; P. N. Gibson; W. Gissler

J. Vac. Sci. Technol. A 15, 284–291 (1997) https://doi.org/10.1116/1.580526

Abstract

View articletitled, Combined x-ray photoelectron/Auger electron spectroscopy/glancing angle x-ray diffraction/extended x-ray absorption fine structure investigation of TiBxNy coatings

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Sample charging of insulators with rough surfaces during Auger electron spectroscopy analysis

Jae-Won Park

J. Vac. Sci. Technol. A 15, 292–293 (1997) https://doi.org/10.1116/1.580527

Abstract

View articletitled, Sample charging of insulators with rough surfaces during Auger electron spectroscopy analysis

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X-ray absorption and Auger electron spectroscopy studies of the quality of diamond thin films grown by the oxy-acetylene flame method

A. Gutiérrez; M. F. López; I. García; A. Vázquez

J. Vac. Sci. Technol. A 15, 294–297 (1997) https://doi.org/10.1116/1.580483

Abstract

View articletitled, X-ray absorption and Auger electron spectroscopy studies of the quality of diamond thin films grown by the oxy-acetylene flame method

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Effect of ion bombardment in very-high frequency glow discharge on growth and properties of ${SiH}_{x}$ films

A. I. Kosarev; A. S. Smirnov; A. S. Abramov; A. J. Vinogradov; A. Yu. Ustavschikov; M. V. Shutov

J. Vac. Sci. Technol. A 15, 298–306 (1997) https://doi.org/10.1116/1.580484

Abstract

View articletitled, Effect of ion bombardment in very-high frequency glow discharge on growth and properties of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SiH</mi><mrow><mi>x</mi></mrow></msub></math> films

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Characterization of helicon wave plasma for a thin film deposition process

Seon-Hyo Kim; Ig-Hyeon Kim; Ki-Sung Kim

J. Vac. Sci. Technol. A 15, 307–312 (1997) https://doi.org/10.1116/1.580485

Abstract

View articletitled, Characterization of helicon wave plasma for a thin film deposition process

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Numerical study of the effects of reactor geometry on a chlorine plasma helicon etch reactor

Gabriel I. Font; Iain D. Boyd

J. Vac. Sci. Technol. A 15, 313–319 (1997) https://doi.org/10.1116/1.580486

Abstract

View articletitled, Numerical study of the effects of reactor geometry on a chlorine plasma helicon etch reactor

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Dual-plasma reactor for low temperature deposition of wide band-gap silicon alloys

R. Etemadi; C. Godet; J. Perrin; B. Drévillon; J. Huc; J. Y. Parey; J. C. Rostaing; F. Coeuret

J. Vac. Sci. Technol. A 15, 320–331 (1997) https://doi.org/10.1116/1.580487

Abstract

View articletitled, Dual-plasma reactor for low temperature deposition of wide band-gap silicon alloys

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Synthesis of epitaxial films of Fe₃O₄ and $α$ -Fe₂O₃ with various low-index orientations by oxygen-plasma-assisted molecular beam epitaxy

Y. Gao; Y. J. Kim; S. A. Chambers; G. Bai

J. Vac. Sci. Technol. A 15, 332–339 (1997) https://doi.org/10.1116/1.580488

Abstract

View articletitled, Synthesis of epitaxial films of Fe3O4 and <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">α</mi></math>-Fe2O3 with various low-index orientations by oxygen-plasma-assisted molecular beam epitaxy

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Quenching of electron temperature and electron density in ionized physical vapor deposition

M. Dickson; F. Qian; J. Hopwood

J. Vac. Sci. Technol. A 15, 340–344 (1997) https://doi.org/10.1116/1.580489

Abstract

View articletitled, Quenching of electron temperature and electron density in ionized physical vapor deposition

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Strain gradients and normal stresses in textured Mo thin films

S. G. Malhotra; Z. U. Rek; S. M. Yalisove; J. C. Bilello

J. Vac. Sci. Technol. A 15, 345–352 (1997) https://doi.org/10.1116/1.580490

Abstract

View articletitled, Strain gradients and normal stresses in textured Mo thin films

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Study of ultrathin polyamide-6,6 films on clean copper and platinum

J. Charlier; V. Detalle; F. Valin; C. Bureau; G. Lécayon

J. Vac. Sci. Technol. A 15, 353–364 (1997) https://doi.org/10.1116/1.580491

Abstract

View articletitled, Study of ultrathin polyamide-6,6 films on clean copper and platinum

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High-pressure flow reactor designed for an ultrahigh vacuum analysis system

C. Sellmer; A. Gaussmann; N. Kruse; R. Prins

J. Vac. Sci. Technol. A 15, 365–368 (1997) https://doi.org/10.1116/1.580492

Abstract

View articletitled, High-pressure flow reactor designed for an ultrahigh vacuum analysis system

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Preparation of low-temperature fluorinated oxides by anodic oxidation in dilute hydrofluosilicic acid (H₂SiF₆) solution

Ming-Jer Jeng; Jenn-Gwo Hwu

J. Vac. Sci. Technol. A 15, 369–373 (1997) https://doi.org/10.1116/1.580493

Abstract

View articletitled, Preparation of low-temperature fluorinated oxides by anodic oxidation in dilute hydrofluosilicic acid (H2SiF6) solution

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New aspects of K promoted nitridation of the InP(100) surface

Lei Huang; Texiu Zhao; Yiwei Duan; Xiaoping Wang; Erdong Lu; Pengshou Xu; C. C. Hsu

J. Vac. Sci. Technol. A 15, 374–376 (1997) https://doi.org/10.1116/1.580494

Abstract

View articletitled, New aspects of K promoted nitridation of the InP(100) surface

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Infrared study of Si-rich silicon oxide films deposited by plasma-enhanced chemical vapor deposition

A. Sassella; A. Borghesi; F. Corni; A. Monelli; G. Ottaviani; R. Tonini; B. Pivac; M. Bacchetta; L. Zanotti

J. Vac. Sci. Technol. A 15, 377–389 (1997) https://doi.org/10.1116/1.580495

Abstract

View articletitled, Infrared study of Si-rich silicon oxide films deposited by plasma-enhanced chemical vapor deposition

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Characteristics of hydrogenated aluminum nitride films prepared by radio frequency reactive sputtering and their application to surface acoustic wave devices

Yoon-Joong Yong; Jai-Young Lee

J. Vac. Sci. Technol. A 15, 390–393 (1997) https://doi.org/10.1116/1.580496

Abstract

View articletitled, Characteristics of hydrogenated aluminum nitride films prepared by radio frequency reactive sputtering and their application to surface acoustic wave devices

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A new silicon phosphide, Si₁₂P₅: Formation conditions, structure, and properties

J. R. A. Carlsson; L. D. Madsen; M. P. Johansson; L. Hultman; X.-H. Li; H. T. G. Hentzell; L. R. Wallenberg

J. Vac. Sci. Technol. A 15, 394–401 (1997) https://doi.org/10.1116/1.580497

Abstract

View articletitled, A new silicon phosphide, Si12P5: Formation conditions, structure, and properties

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Interaction of hydrogen plasmas with hydrocarbon films, investigated by infrared spectroscopy using an optical cavity substrate

A. von Keudell; W. Jacob

J. Vac. Sci. Technol. A 15, 402–407 (1997) https://doi.org/10.1116/1.580498

Abstract

View articletitled, Interaction of hydrogen plasmas with hydrocarbon films, investigated by infrared spectroscopy using an optical cavity substrate

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Interface formation between hydrogen terminated Si(111) and amorphous hydrogenated carbon (a-C:H)

J. Schäfer; J. Ristein; S. Miyazaki; L. Ley

J. Vac. Sci. Technol. A 15, 408–414 (1997) https://doi.org/10.1116/1.580499

Abstract

View articletitled, Interface formation between hydrogen terminated Si(111) and amorphous hydrogenated carbon (a-C:H)

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Thermal stability of Cu/W/Si contact systems using layers of Cu(111) and W(110) preferred orientations

Mayumi Takeyama; Atsushi Noya; Tomoyuki Fukuda

J. Vac. Sci. Technol. A 15, 415–420 (1997) https://doi.org/10.1116/1.580500

Abstract

View articletitled, Thermal stability of Cu/W/Si contact systems using layers of Cu(111) and W(110) preferred orientations

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Microstructure and corrosion resistance of plasma source ion nitrided austenitic stainless steel

M. K. Lei; Z. L. Zhang

J. Vac. Sci. Technol. A 15, 421–427 (1997) https://doi.org/10.1116/1.580501

Abstract

View articletitled, Microstructure and corrosion resistance of plasma source ion nitrided austenitic stainless steel

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Work function determination of zinc oxide films

K. B. Sundaram; Ashamin Khan

J. Vac. Sci. Technol. A 15, 428–430 (1997) https://doi.org/10.1116/1.580502

Abstract

View articletitled, Work function determination of zinc oxide films

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Room temperature preparation method of polycrystalline ${CuInSe}_{2}$ thin films

C. M. Joseph; C. S. Menon

J. Vac. Sci. Technol. A 15, 431–432 (1997) https://doi.org/10.1116/1.580503

View articletitled, Room temperature preparation method of polycrystalline <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">CuInSe</mi><mrow><mn>2</mn></mrow></msub></math> thin films

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Stability of rapidly annealed reactive sputter deposited nitrided silicon dioxide

G. Eftekhari

J. Vac. Sci. Technol. A 15, 433–435 (1997) https://doi.org/10.1116/1.580504

Abstract

View articletitled, Stability of rapidly annealed reactive sputter deposited nitrided silicon dioxide

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Thermal conductivity issues in the construction of manipulators for ultrahigh vacuum systems

Camelia Rusu; John T. Yates, Jr.

J. Vac. Sci. Technol. A 15, 436–438 (1997) https://doi.org/10.1116/1.580505

Abstract

View articletitled, Thermal conductivity issues in the construction of manipulators for ultrahigh vacuum systems

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Surface reactions of Ge chemical vapor deposition using diethylgermane

Hiromu Ishii; Yasuo Takahashi

J. Vac. Sci. Technol. A 15, 439–442 (1997) https://doi.org/10.1116/1.580506

View articletitled, Surface reactions of Ge chemical vapor deposition using diethylgermane

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