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Particle emission debris from a KrF laser–plasma x‐ray source

R. Bobkowski; R. Fedosejevs

J. Vac. Sci. Technol. A 14, 1973–1980 (1996) https://doi.org/10.1116/1.580070

Abstract

View articletitled, Particle emission debris from a KrF laser–plasma x‐ray source

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Formation of polytetrafluoroethylene thin films by using CO₂ laser evaporation and XeCl laser ablation

Muneto Inayoshi; Masaru Hori; Toshio Goto; Mineo Hiramatsu; Masahito Nawata; Shuzo Hattori

J. Vac. Sci. Technol. A 14, 1981–1985 (1996) https://doi.org/10.1116/1.580071

Abstract

View articletitled, Formation of polytetrafluoroethylene thin films by using CO2 laser evaporation and XeCl laser ablation

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Synthesis and deposition of silicon nitride films by laser reactive ablation of silicon in low pressure ammonia: A parametric study

I. N. Mihãilescu; Adriana Litã; V. S. Teodorescu; Eniko Gyorgy; Rodica Alexandrescu; A. Luches; M. Martino; A. Barboricã

J. Vac. Sci. Technol. A 14, 1986–1994 (1996) https://doi.org/10.1116/1.580072

Abstract

View articletitled, Synthesis and deposition of silicon nitride films by laser reactive ablation of silicon in low pressure ammonia: A parametric study

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YBa₂Cu₃O_7−x thin film over 3 in. substrate using off‐axis excimer laser deposition

T. Nagaishi; H. Itozaki

J. Vac. Sci. Technol. A 14, 1995–1998 (1996) https://doi.org/10.1116/1.580073

Abstract

View articletitled, YBa2Cu3O7−x thin film over 3 in. substrate using off‐axis excimer laser deposition

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Behavior of Si atoms in a silane electron cyclotron resonance plasma at high dissociations

Y. Yamamoto; M. Hori; T. Goto; M. Hiramatsu

J. Vac. Sci. Technol. A 14, 1999–2003 (1996) https://doi.org/10.1116/1.580074

Abstract

View articletitled, Behavior of Si atoms in a silane electron cyclotron resonance plasma at high dissociations

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Fluorocarbon radicals and surface reactions in fluorocarbon high density etching plasma. I. O₂ addition to electron cyclotron resonance plasma employing CHF₃

Kunimasa Takahashi; Masaru Hori; Toshio Goto

J. Vac. Sci. Technol. A 14, 2004–2010 (1996) https://doi.org/10.1116/1.580075

Abstract

View articletitled, Fluorocarbon radicals and surface reactions in fluorocarbon high density etching plasma. I. O2 addition to electron cyclotron resonance plasma employing CHF3

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Fluorocarbon radicals and surface reactions in fluorocarbon high density etching plasma. II. H₂ addition to electron cyclotron resonance plasma employing CHF₃

Kunimasa Takahashi; Masaru Hori; Toshio Goto

J. Vac. Sci. Technol. A 14, 2011–2019 (1996) https://doi.org/10.1116/1.580076

Abstract

View articletitled, Fluorocarbon radicals and surface reactions in fluorocarbon high density etching plasma. II. H2 addition to electron cyclotron resonance plasma employing CHF3

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Relating electric field distribution of an electron cyclotron resonance cavity to dry etching characteristics

K. K. Ko; S. W. Pang; M. Dahimene

J. Vac. Sci. Technol. A 14, 2020–2025 (1996) https://doi.org/10.1116/1.580077

Abstract

View articletitled, Relating electric field distribution of an electron cyclotron resonance cavity to dry etching characteristics

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Ion desorption stability in superconducting high energy physics proton colliders

William C. Turner

J. Vac. Sci. Technol. A 14, 2026–2038 (1996) https://doi.org/10.1116/1.580078

Abstract

View articletitled, Ion desorption stability in superconducting high energy physics proton colliders

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Diamond‐like carbon film synthesized by ion beam assisted deposition and its tribological properties

Xiaomimg He; Wenzhi Li; Hengde Li

J. Vac. Sci. Technol. A 14, 2039–2047 (1996) https://doi.org/10.1116/1.580079

Abstract

View articletitled, Diamond‐like carbon film synthesized by ion beam assisted deposition and its tribological properties

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Radio frequency matching for helicon plasma sources

J. P. Rayner; A. D. Cheetham; G. N. French

J. Vac. Sci. Technol. A 14, 2048–2055 (1996) https://doi.org/10.1116/1.580080

Abstract

View articletitled, Radio frequency matching for helicon plasma sources

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Reactive ion beam assisted deposition of zirconium oxyfluoride thin films

U. J. Gibson; K. D. Cornett

J. Vac. Sci. Technol. A 14, 2056–2061 (1996) https://doi.org/10.1116/1.580081

Abstract

View articletitled, Reactive ion beam assisted deposition of zirconium oxyfluoride thin films

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Study of surface reactions during plasma enhanced chemical vapor deposition of SiO₂ from SiH₄, O₂, and Ar plasma

Sang M. Han; Eray S. Aydil

J. Vac. Sci. Technol. A 14, 2062–2070 (1996) https://doi.org/10.1116/1.580082

Abstract

View articletitled, Study of surface reactions during plasma enhanced chemical vapor deposition of SiO2 from SiH4, O2, and Ar plasma

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Reactor modeling for radio frequency plasma deposition of SiN_xH_y: Comparison between two reactor designs

H. Caquineau; G. Dupont; B. Despax; J. P. Couderc

J. Vac. Sci. Technol. A 14, 2071–2082 (1996) https://doi.org/10.1116/1.580083

Abstract

View articletitled, Reactor modeling for radio frequency plasma deposition of SiNxHy: Comparison between two reactor designs

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CF_X radical generation by plasma interaction with fluorocarbon films on the reactor wall

Koji Miyata; Masaru Hori; Toshio Goto

J. Vac. Sci. Technol. A 14, 2083–2087 (1996) https://doi.org/10.1116/1.580084

Abstract

View articletitled, CFX radical generation by plasma interaction with fluorocarbon films on the reactor wall

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SiO_xN_y films deposited by remote plasma enhanced chemical vapor deposition using SiCl₄

O. Sanchez; M. A. Aguilar; C. Falcony; J. M. Martinez‐Duart; J. M. Albella

J. Vac. Sci. Technol. A 14, 2088–2093 (1996) https://doi.org/10.1116/1.580085

Abstract

View articletitled, SiOxNy films deposited by remote plasma enhanced chemical vapor deposition using SiCl4

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Electron‐beam controlled radio frequency discharges for plasma processing

Mark J. Kushner; Wenli Z. Collison; David N. Ruzic

J. Vac. Sci. Technol. A 14, 2094–2101 (1996) https://doi.org/10.1116/1.580086

Abstract

View articletitled, Electron‐beam controlled radio frequency discharges for plasma processing

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Vacuum ultraviolet emission from radio frequency plasmas of SF₆ and CF₄

Jan Li; J. W. McConkey

J. Vac. Sci. Technol. A 14, 2102–2105 (1996) https://doi.org/10.1116/1.580087

Abstract

View articletitled, Vacuum ultraviolet emission from radio frequency plasmas of SF6 and CF4

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Probe for measuring ion beam angular distribution

J. R. Kahn; H. R. Kaufman; C. A. Phillips; R. S. Robinson

J. Vac. Sci. Technol. A 14, 2106–2112 (1996) https://doi.org/10.1116/1.580088

Abstract

View articletitled, Probe for measuring ion beam angular distribution

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Spatial distributions of electron density and electron temperature in direct current glow discharge

W. H. Tao; M. A. Prelas; H. K. Yasuda

J. Vac. Sci. Technol. A 14, 2113–2121 (1996) https://doi.org/10.1116/1.580089

Abstract

View articletitled, Spatial distributions of electron density and electron temperature in direct current glow discharge

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Analysis of pulse‐time modulated high‐density discharges

M. Meyyappan

J. Vac. Sci. Technol. A 14, 2122–2126 (1996) https://doi.org/10.1116/1.580090

Abstract

View articletitled, Analysis of pulse‐time modulated high‐density discharges

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Fluorocarbon high density plasmas. VII. Investigation of selective SiO₂‐to‐Si₃N₄ high density plasma etch processes

Ying Zhang; Gottlieb S. Oehrlein; Ferdinand H. Bell

J. Vac. Sci. Technol. A 14, 2127–2137 (1996) https://doi.org/10.1116/1.580091

Abstract

View articletitled, Fluorocarbon high density plasmas. VII. Investigation of selective SiO2‐to‐Si3N4 high density plasma etch processes

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Ion‐assisted Si/XeF₂‐etching: Influence of ion/neutral flux ratio and ion energy

M. J. M. Vugts; L. J. F. Hermans; H. C. W. Beijerinck

J. Vac. Sci. Technol. A 14, 2138–2150 (1996) https://doi.org/10.1116/1.580038

Abstract

View articletitled, Ion‐assisted Si/XeF2‐etching: Influence of ion/neutral flux ratio and ion energy

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Role of nitrogen in the downstream etching of silicon nitride

M. G. Blain; T. L. Meisenheimer; J. E. Stevens

J. Vac. Sci. Technol. A 14, 2151–2157 (1996) https://doi.org/10.1116/1.580039

Abstract

View articletitled, Role of nitrogen in the downstream etching of silicon nitride

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Negative ion density in inductively coupled chlorine plasmas

G. A. Hebner

J. Vac. Sci. Technol. A 14, 2158–2162 (1996) https://doi.org/10.1116/1.580040

Abstract

View articletitled, Negative ion density in inductively coupled chlorine plasmas

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Characterization of helicon wave plasma designed for direct current sputtering

J. Q. Zhang; Y. Setsuhara; T. Ariyasu; S. Miyake

J. Vac. Sci. Technol. A 14, 2163–2168 (1996) https://doi.org/10.1116/1.580041

Abstract

View articletitled, Characterization of helicon wave plasma designed for direct current sputtering

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Origin of stresses in sputtered elemental and alloy thin films

C. Hudson; R. E. Somekh

J. Vac. Sci. Technol. A 14, 2169–2174 (1996) https://doi.org/10.1116/1.580042

Abstract

View articletitled, Origin of stresses in sputtered elemental and alloy thin films

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Electrostatic scattering of ionic species in low pressure sputtering of Ti and TiN

C. J. Backhouse; K. Robbie; J. Parks; J. N. Broughton; S. Dew; G. Este; M. J. Brett

J. Vac. Sci. Technol. A 14, 2175–2181 (1996) https://doi.org/10.1116/1.580043

Abstract

View articletitled, Electrostatic scattering of ionic species in low pressure sputtering of Ti and TiN

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Discharge characteristics of a facing target sputtering device using unbalanced magnetrons

G. K. Muralidhar; J. Musil; S. Kadlec

J. Vac. Sci. Technol. A 14, 2182–2186 (1996) https://doi.org/10.1116/1.580044

Abstract

View articletitled, Discharge characteristics of a facing target sputtering device using unbalanced magnetrons

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High‐rate magnetron sputtering

J. Musil; A. Rajský; A. J. Bell; J. Matouš; M. Čepera; J. Zeman

J. Vac. Sci. Technol. A 14, 2187–2191 (1996) https://doi.org/10.1116/1.580045

Abstract

View articletitled, High‐rate magnetron sputtering

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Oxidation‐enhanced roughening of thin Co films during sputtering by O⁺₂ ions

B. Mohadjeri; M. Petravić; B. G. Svensson

J. Vac. Sci. Technol. A 14, 2192–2201 (1996) https://doi.org/10.1116/1.580046

Abstract

View articletitled, Oxidation‐enhanced roughening of thin Co films during sputtering by O+2 ions

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Microstructure of radio frequency sputtered Ag_1−xSi_x alloys

K. D. Leedy; J. M. Rigsbee

J. Vac. Sci. Technol. A 14, 2202–2206 (1996) https://doi.org/10.1116/1.580047

Abstract

View articletitled, Microstructure of radio frequency sputtered Ag1−xSix alloys

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Reactive sputter‐deposition and characterization of lead oxide films

Y. Pauleau; E. Harry

J. Vac. Sci. Technol. A 14, 2207–2214 (1996) https://doi.org/10.1116/1.580048

Abstract

View articletitled, Reactive sputter‐deposition and characterization of lead oxide films

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Characteristics of reactively sputtered Pt–SnO₂ thin films for CO gas sensors

M. Di Giulio; G. Micocci; A. Serra; A. Tepore; R. Rella; P. Siciliano

J. Vac. Sci. Technol. A 14, 2215–2219 (1996) https://doi.org/10.1116/1.580049

Abstract

View articletitled, Characteristics of reactively sputtered Pt–SnO2 thin films for CO gas sensors

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Postdeposition annealing of radio frequency magnetron sputtered ZnO films

M. K. Puchert; P. Y. Timbrell; R. N. Lamb

J. Vac. Sci. Technol. A 14, 2220–2230 (1996) https://doi.org/10.1116/1.580050

Abstract

View articletitled, Postdeposition annealing of radio frequency magnetron sputtered ZnO films

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Computational modeling of reactive gas modulation in radio frequency reactive sputtering

Hidetoshi Sekiguchi; Takashi Murakami; Atsushi Kanzawa; Takahiro Imai; Takuya Honda

J. Vac. Sci. Technol. A 14, 2231–2234 (1996) https://doi.org/10.1116/1.580051

Abstract

View articletitled, Computational modeling of reactive gas modulation in radio frequency reactive sputtering

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Compact‐heating stage for use in sputtering in active oxygen gas environments

Y. Igarashi; Y. Fujino; T. Takahashi

J. Vac. Sci. Technol. A 14, 2235–2237 (1996) https://doi.org/10.1116/1.580052

Abstract

View articletitled, Compact‐heating stage for use in sputtering in active oxygen gas environments

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Low‐temperature growth of aluminum nitride thin films on silicon by reactive radio frequency magnetron sputtering^*

Chien‐Chuan Cheng; Ying‐Chung Chen; Horng‐Jwo Wang; Wen‐Rong Chen

J. Vac. Sci. Technol. A 14, 2238–2242 (1996) https://doi.org/10.1116/1.580053

Abstract

View articletitled, Low‐temperature growth of aluminum nitride thin films on silicon by reactive radio frequency magnetron sputtering*

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Physical properties and chemical states of rf sputter deposited SiWO_x films

Itaru Shibata; Toshikazu Nishide; Toshinori Hasegawa

J. Vac. Sci. Technol. A 14, 2243–2246 (1996) https://doi.org/10.1116/1.580054

Abstract

View articletitled, Physical properties and chemical states of rf sputter deposited SiWOx films

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Formation of high temperature phases in sputter deposited Ti‐based films below 100 °C

J. Musil; A. J. Bell; J. Vlček; T. Hurkmans

J. Vac. Sci. Technol. A 14, 2247–2250 (1996) https://doi.org/10.1116/1.580055

Abstract

View articletitled, Formation of high temperature phases in sputter deposited Ti‐based films below 100 °C

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Cu (In,Ga)Se₂ thin films and solar cells prepared by selenization of metallic precursors

Bülent M. Başol; Vijay K. Kapur; Arvind Halani; Craig R. Leidholm; Jon Sharp; James R. Sites; Amy Swartzlander; Richard Matson; Harin Ullal

J. Vac. Sci. Technol. A 14, 2251–2256 (1996) https://doi.org/10.1116/1.580056

Abstract

View articletitled, Cu (In,Ga)Se2 thin films and solar cells prepared by selenization of metallic precursors

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Analysis of aluminum nitride epitaxial growth by low pressure metal organic chemical vapor deposition

R. C. Buggeln; M. Meyyappan; S. J. Shamroth

J. Vac. Sci. Technol. A 14, 2257–2262 (1996) https://doi.org/10.1116/1.580057

Abstract

View articletitled, Analysis of aluminum nitride epitaxial growth by low pressure metal organic chemical vapor deposition

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Preparation and characterization of a well‐ordered surface on a Si(001) substrate with a buried metal layer for application of infrared reflection spectroscopy

Yoshihiro Kobayashi; Koji Sumitomo; Kuniyil Prabhakaran; Toshio Ogino

J. Vac. Sci. Technol. A 14, 2263–2268 (1996) https://doi.org/10.1116/1.580058

Abstract

View articletitled, Preparation and characterization of a well‐ordered surface on a Si(001) substrate with a buried metal layer for application of infrared reflection spectroscopy

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Investigation of deep levels in ZnSe:Cl films grown by molecular beam epitaxy

L. Hernández; O. de Melo; M. Meléndez‐Lira; Z. Rivera‐Alvarez; I. Hernández‐Calderón

J. Vac. Sci. Technol. A 14, 2269–2274 (1996) https://doi.org/10.1116/1.580059

Abstract

View articletitled, Investigation of deep levels in ZnSe:Cl films grown by molecular beam epitaxy

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Surface‐extended x‐ray absorption fine structure study of silicon deposited onto GaAs(110)

M. L. Hasnaoui; A. M. Flank; M. Pompa; P. Lagarde

J. Vac. Sci. Technol. A 14, 2275–2281 (1996) https://doi.org/10.1116/1.580060

Abstract

View articletitled, Surface‐extended x‐ray absorption fine structure study of silicon deposited onto GaAs(110)

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Adsorption controlled Si_(1−x)Ge_x growth during chemical vapor deposition

H. Kühne; A. Fischer; Th. Morgenstern; P. Zaumseil

J. Vac. Sci. Technol. A 14, 2282–2288 (1996) https://doi.org/10.1116/1.580061

Abstract

View articletitled, Adsorption controlled Si(1−x)Gex growth during chemical vapor deposition

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Visualization of a buried organic interface by imaging time‐of‐flight secondary ion mass spectrometry and scanning Auger microprobe of an ion‐beam crater edge

Patrick C. Schamberger; Gary L. Jones; Joseph A. Gardella, Jr.; Patrick J. McKeown; Larry E. Davis

J. Vac. Sci. Technol. A 14, 2289–2302 (1996) https://doi.org/10.1116/1.580062

Abstract

View articletitled, Visualization of a buried organic interface by imaging time‐of‐flight secondary ion mass spectrometry and scanning Auger microprobe of an ion‐beam crater edge

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Cleaning thin‐film diamond surfaces for device fabrication: An Auger electron spectroscopic study

Bhaswar Baral; Simon S. M. Chan; Richard B. Jackman

J. Vac. Sci. Technol. A 14, 2303–2307 (1996) https://doi.org/10.1116/1.580063

Abstract

View articletitled, Cleaning thin‐film diamond surfaces for device fabrication: An Auger electron spectroscopic study

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Isothermal hydrogen desorption from the diamond (100)2×1 surface

M. McGonigal; M. L. Kempel; M. S. Hammond; K. D. Jamison

J. Vac. Sci. Technol. A 14, 2308–2314 (1996) https://doi.org/10.1116/1.580064

Abstract

View articletitled, Isothermal hydrogen desorption from the diamond (100)2×1 surface

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Time‐resolved mass spectrometry in rough vacuum environment

J. Laimer; O. Schnabl; C. G. Schwärzler; H. Störi

J. Vac. Sci. Technol. A 14, 2315–2324 (1996) https://doi.org/10.1116/1.580065

Abstract

View articletitled, Time‐resolved mass spectrometry in rough vacuum environment

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Thermal stability of photochemical native oxide films on Hg_1−xCd_xTe

G. H. Winton; N. Warrington; L. Faraone

J. Vac. Sci. Technol. A 14, 2325–2330 (1996) https://doi.org/10.1116/1.580017

Abstract

View articletitled, Thermal stability of photochemical native oxide films on Hg1−xCdxTe

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Numerical ellipsometry: Applications of a new algorithm for real‐time, in situ film growth monitoring

Frank K. Urban, III; John Craig Comfort

J. Vac. Sci. Technol. A 14, 2331–2336 (1996) https://doi.org/10.1116/1.580018

Abstract

View articletitled, Numerical ellipsometry: Applications of a new algorithm for real‐time, in situ film growth monitoring

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Molecular beam sampling to analyze the reaction mechanism of chemical vapor deposition

Y. Tsutsumi; M. Ikegawa; T. Usui; Y. Ichikawa; K. Watanabe; J. Kobayashi

J. Vac. Sci. Technol. A 14, 2337–2342 (1996) https://doi.org/10.1116/1.580019

Abstract

View articletitled, Molecular beam sampling to analyze the reaction mechanism of chemical vapor deposition

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Infrared diode laser absorption spectroscopy measurements of CF_X (X=1–3) radical densities in electron cyclotron resonance plasmas employing C₄F₈, C₂F₆, CF₄, and CHF₃ gases

Koji Miyata; Masaru Hori; Toshio Goto

J. Vac. Sci. Technol. A 14, 2343–2350 (1996) https://doi.org/10.1116/1.580020

Abstract

View articletitled, Infrared diode laser absorption spectroscopy measurements of CFX (X=1–3) radical densities in electron cyclotron resonance plasmas employing C4F8, C2F6, CF4, and CHF3 gases

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Atomic force microscopy of amorphous hydrogenated carbon–nitrogen films deposited by radio‐frequency‐plasma decomposition of methane–ammonia gas mixtures

R. Prioli; S. I. Zanette; A. O. Caride; D. F. Franceschini; F. L. Freire, Jr.

J. Vac. Sci. Technol. A 14, 2351–2355 (1996) https://doi.org/10.1116/1.580021

Abstract

View articletitled, Atomic force microscopy of amorphous hydrogenated carbon–nitrogen films deposited by radio‐frequency‐plasma decomposition of methane–ammonia gas mixtures

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In situ wafer temperature monitoring of silicon etching using diffuse reflectance spectroscopy

J. L. Booth; B. T. Beard; J. E. Stevens; M. G. Blain; T. L. Meisenheimer

J. Vac. Sci. Technol. A 14, 2356–2360 (1996) https://doi.org/10.1116/1.580022

Abstract

View articletitled, In situ wafer temperature monitoring of silicon etching using diffuse reflectance spectroscopy

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Relative sensitivity factors of B related to SiGe alloy composition on secondary ion mass spectrometry with an oxygen primary ion beam

Kiyohisa Fujinaga

J. Vac. Sci. Technol. A 14, 2361–2365 (1996) https://doi.org/10.1116/1.580023

Abstract

View articletitled, Relative sensitivity factors of B related to SiGe alloy composition on secondary ion mass spectrometry with an oxygen primary ion beam

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Surface chemical reaction between polycarbonate and kilo‐electron‐volt energy Ar⁺ ion in oxygen environment

Won‐Kook Choi; Seok‐Keun Koh; Hyung‐Jin Jung

J. Vac. Sci. Technol. A 14, 2366–2371 (1996) https://doi.org/10.1116/1.580024

Abstract

View articletitled, Surface chemical reaction between polycarbonate and kilo‐electron‐volt energy Ar+ ion in oxygen environment

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Interaction of water with clean and gallium precovered Fe(111) surfaces

P. Jiang; M. W. Zappone; Steven L. Bernasek; A. Robertson, Jr.

J. Vac. Sci. Technol. A 14, 2372–2377 (1996) https://doi.org/10.1116/1.580025

Abstract

View articletitled, Interaction of water with clean and gallium precovered Fe(111) surfaces

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Microtribological studies of unlubricated and lubricated surfaces using atomic force/friction force microscopy

Vilas N. Koinkar; Bharat Bhushan

J. Vac. Sci. Technol. A 14, 2378–2391 (1996) https://doi.org/10.1116/1.580026

Abstract

View articletitled, Microtribological studies of unlubricated and lubricated surfaces using atomic force/friction force microscopy

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Comparison of submicron particle analysis by Auger electron spectroscopy, time‐of‐flight secondary ion mass spectrometry, and secondary electron microscopy with energy dispersive x‐ray spectroscopy

Kenton D. Childs; David Narum; Lori A. LaVanier; Patricia M. Lindley; Bruno W. Schueler; George Mulholland; Alain C. Diebold

J. Vac. Sci. Technol. A 14, 2392–2404 (1996) https://doi.org/10.1116/1.580027

Abstract

View articletitled, Comparison of submicron particle analysis by Auger electron spectroscopy, time‐of‐flight secondary ion mass spectrometry, and secondary electron microscopy with energy dispersive x‐ray spectroscopy

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Recoil spectrometry of thin film reactions in the Pd/InP system

Leif Persson; Mohamed El Bouanani; Mikael Hult; Patrik Jönsson; Harry J. Whitlow; Margaretha Andersson; Kristina Georgsson; Ian F. Bubb; Peter N. Johnston; Scott R. Walker; David D. Cohen; Nick Dytlewski; Carina Zaring; Mikael Östling

J. Vac. Sci. Technol. A 14, 2405–2413 (1996) https://doi.org/10.1116/1.580028

Abstract

View articletitled, Recoil spectrometry of thin film reactions in the Pd/InP system

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Focusing glass capillary array molecular beam inlet for a high sensitivity mass spectrometer system

Y. Ma; B. Y. H. Liu; H. S. Lee; K. Mauersberger; J. Morton

J. Vac. Sci. Technol. A 14, 2414–2417 (1996) https://doi.org/10.1116/1.580029

Abstract

View articletitled, Focusing glass capillary array molecular beam inlet for a high sensitivity mass spectrometer system

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Physical properties of diamondlike carbon films deposited in mixed atmospheres of C₂H₄–Ar, C₂H₄–H₂, and C₂H₄–N₂

Masatoshi Nakayama; Yasuhiro Matsuba; Junichi Shimamura; Yasuyuki Yamamoto; Hiroshi Chihara; Hideo Kato; Kazunori Maruyama; Kiichiro Kamata

J. Vac. Sci. Technol. A 14, 2418–2426 (1996) https://doi.org/10.1116/1.580030

Abstract

View articletitled, Physical properties of diamondlike carbon films deposited in mixed atmospheres of C2H4–Ar, C2H4–H2, and C2H4–N2

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Conductance and leakage in superconducting tunnel junctions

M. S. Goodchild; Z. H. Barber; M. G. Blamire

J. Vac. Sci. Technol. A 14, 2427–2432 (1996) https://doi.org/10.1116/1.580031

Abstract

View articletitled, Conductance and leakage in superconducting tunnel junctions

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Schottky barrier at the Au/Gap (110) interface

M. Fanfoni; C. Goletti; P. Chiaradia; W. Ng; F. Cerrina; Y. Hwu; A. Terrasi; G. Margaritondo

J. Vac. Sci. Technol. A 14, 2433–2436 (1996) https://doi.org/10.1116/1.580032

Abstract

View articletitled, Schottky barrier at the Au/Gap (110) interface

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Characterization of as‐grown and annealed thin SiO₂ films formed in 0.1 M HCl

E. M. Allegretto; J. A. Bardwell

J. Vac. Sci. Technol. A 14, 2437–2442 (1996) https://doi.org/10.1116/1.580033

Abstract

View articletitled, Characterization of as‐grown and annealed thin SiO2 films formed in 0.1 M HCl

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Solid phase epitaxy with x‐ray irradiation using a compact synchrotron radiation source AURORA

Takanori Katoh; Hironari Yamada; Fumio Sato; Yoshiyuki Hirano; Jun‐ichi Chikawa

J. Vac. Sci. Technol. A 14, 2443–2447 (1996) https://doi.org/10.1116/1.580034

Abstract

View articletitled, Solid phase epitaxy with x‐ray irradiation using a compact synchrotron radiation source AURORA

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Electronic states of a clean Si(110) 16×2 surface studied by angle resolved photoemission and surface differential reflectivity

A. Crincenti; B. Nesterenko; P. Perfetti; G. LeLay; C. Sebenne

J. Vac. Sci. Technol. A 14, 2448–2453 (1996) https://doi.org/10.1116/1.580035

Abstract

View articletitled, Electronic states of a clean Si(110) 16×2 surface studied by angle resolved photoemission and surface differential reflectivity

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Effect of a surface layer on the stress relaxation of thin films

M. D. Thouless; K. P. Rodbell; C. Cabral, Jr.

J. Vac. Sci. Technol. A 14, 2454–2461 (1996) https://doi.org/10.1116/1.580036

Abstract

View articletitled, Effect of a surface layer on the stress relaxation of thin films

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Residual macroscopic stress in highly preferentially oriented titanium nitride coatings deposited on various steel types

C. Quaeyhaegens; G. Knuyt; L. M. Stals

J. Vac. Sci. Technol. A 14, 2462–2469 (1996) https://doi.org/10.1116/1.580037

Abstract

View articletitled, Residual macroscopic stress in highly preferentially oriented titanium nitride coatings deposited on various steel types

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Changes in refractive index and in chemical state of synchrotron radiation irradiated fluorinated polyimide films

Yasuko Yamada Maruo; Shigekuni Sasaki; Tsuneyuki Haga; Hiroo Kinoshita; Toshiyuki Horiuchi; Toshiaki Tamamura

J. Vac. Sci. Technol. A 14, 2470–2474 (1996) https://doi.org/10.1116/1.580003

Abstract

View articletitled, Changes in refractive index and in chemical state of synchrotron radiation irradiated fluorinated polyimide films

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Photoelectron spectroscopy during pulsed laser melting of surfaces

G. Gantner; H.‐G. Boyen; P. Oelhafen; K. Rink

J. Vac. Sci. Technol. A 14, 2475–2479 (1996) https://doi.org/10.1116/1.580004

Abstract

View articletitled, Photoelectron spectroscopy during pulsed laser melting of surfaces

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Photoluminescence measurements in the phase transition region for CdS thin films

H. Ariza‐Calderon; R. Lozada‐Morales; O. Zelaya‐Angel; J. G. Mendoza‐Alvarez; L. Baños

J. Vac. Sci. Technol. A 14, 2480–2482 (1996) https://doi.org/10.1116/1.580005

Abstract

View articletitled, Photoluminescence measurements in the phase transition region for CdS thin films

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Measurement of the elastic stress of thin films deposited on gallium arsenide

R. E. Mihailovich; T. Koscica; R. J. Zeto

J. Vac. Sci. Technol. A 14, 2483–2487 (1996) https://doi.org/10.1116/1.580006

Abstract

View articletitled, Measurement of the elastic stress of thin films deposited on gallium arsenide

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Characterization of silicon oxynitride thin films by infrared reflection absorption spectroscopy

M. Firon; C. Bonnelle; A. Mayeux

J. Vac. Sci. Technol. A 14, 2488–2492 (1996) https://doi.org/10.1116/1.580007

Abstract

View articletitled, Characterization of silicon oxynitride thin films by infrared reflection absorption spectroscopy

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Strengthening of Al₂O₃‐based ceramics by metalorganic chemical vapor deposition

I. Yu. Konyashin

J. Vac. Sci. Technol. A 14, 2493–2498 (1996) https://doi.org/10.1116/1.580008

Abstract

View articletitled, Strengthening of Al2O3‐based ceramics by metalorganic chemical vapor deposition

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Effects of Y or Gd addition on the structures and resistivities of Al thin films

Shinji Takayama; Naganori Tsutsui

J. Vac. Sci. Technol. A 14, 2499–2504 (1996) https://doi.org/10.1116/1.580009

Abstract

View articletitled, Effects of Y or Gd addition on the structures and resistivities of Al thin films

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Formation of chromium oxide on 316L austenitic stainless steel

Tadahiro Ohmi; Yoshinori Nakagawa; Masakazu Nakamura; Atushi Ohki; Tomoyuki Koyama

J. Vac. Sci. Technol. A 14, 2505–2510 (1996) https://doi.org/10.1116/1.580010

Abstract

View articletitled, Formation of chromium oxide on 316L austenitic stainless steel

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Properties of radio frequency–sputtered alumina films on flat and grooved substrates

C. A. Ross

J. Vac. Sci. Technol. A 14, 2511–2516 (1996) https://doi.org/10.1116/1.580011

Abstract

View articletitled, Properties of radio frequency–sputtered alumina films on flat and grooved substrates

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Characteristics of Cu thin films on a glass substrate by partially ionized beam deposition at room temperature

Y. S. Yoon; K. H. Kim; H. G. Jang; H. J. Jung; S. K. Koh

J. Vac. Sci. Technol. A 14, 2517–2521 (1996) https://doi.org/10.1116/1.580012

Abstract

View articletitled, Characteristics of Cu thin films on a glass substrate by partially ionized beam deposition at room temperature

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Effect of annealing on Ag films on Pt(111)

J. S. Tsay; C. S. Shern

J. Vac. Sci. Technol. A 14, 2522–2526 (1996) https://doi.org/10.1116/1.580013

Abstract

View articletitled, Effect of annealing on Ag films on Pt(111)

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High temperature oxidation of thin CrN coatings deposited on steel

I. Milošev; J. M. Abels; H.‐H. Strehblow; B. Navinšek; M. Metikoš‐Hukovič

J. Vac. Sci. Technol. A 14, 2527–2534 (1996) https://doi.org/10.1116/1.580014

Abstract

View articletitled, High temperature oxidation of thin CrN coatings deposited on steel

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Effect of energetic particles on the residual stresses in nonhydrogenated amorphous carbon films deposited on grounded substrates by dc magnetron sputtering

E. Mounier; Y. Pauleau

J. Vac. Sci. Technol. A 14, 2535–2543 (1996) https://doi.org/10.1116/1.580015

Abstract

View articletitled, Effect of energetic particles on the residual stresses in nonhydrogenated amorphous carbon films deposited on grounded substrates by dc magnetron sputtering

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Surface flatness of polished metal single crystals

C. Emil Tripa; John T. Yates, Jr.

J. Vac. Sci. Technol. A 14, 2544–2546 (1996) https://doi.org/10.1116/1.580016

Abstract

View articletitled, Surface flatness of polished metal single crystals

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Growth dynamics and surface fine structure of ZnO ultrafine particle films

Zhao Dachun; Qu Zhongkai; Pan Xiaoren

J. Vac. Sci. Technol. A 14, 2547–2550 (1996) https://doi.org/10.1116/1.579979

Abstract

View articletitled, Growth dynamics and surface fine structure of ZnO ultrafine particle films

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Direct observation of β‐TaH phase precipitation in tantalum–hydrogen solid solution

C. L. Chen; D. S. Zhou; T. E. Mitchell; H. Q. Ye

J. Vac. Sci. Technol. A 14, 2551–2553 (1996) https://doi.org/10.1116/1.579980

Abstract

View articletitled, Direct observation of β‐TaH phase precipitation in tantalum–hydrogen solid solution

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Growth of ultrathin crystalline Al₂O₃ films on Ru(0001) and Re(0001) surfaces

Yutong Wu; Eric Garfunkel; Theodore E. Madey

J. Vac. Sci. Technol. A 14, 2554–2563 (1996) https://doi.org/10.1116/1.579981

Abstract

View articletitled, Growth of ultrathin crystalline Al2O3 films on Ru(0001) and Re(0001) surfaces

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Solid‐state reaction of Ti and Ni thin films with aluminum nitride

Xiangjun He; Kun Tao; Yudian Fan

J. Vac. Sci. Technol. A 14, 2564–2569 (1996) https://doi.org/10.1116/1.579982

Abstract

View articletitled, Solid‐state reaction of Ti and Ni thin films with aluminum nitride

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Whiskers grown on aluminum thin films during heat treatments

Kenji Hinode; Yoshio Homma; Yasushi Sasaki

J. Vac. Sci. Technol. A 14, 2570–2576 (1996) https://doi.org/10.1116/1.579983

Abstract

View articletitled, Whiskers grown on aluminum thin films during heat treatments

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Granular superconductor contacts to two‐dimensional electron gases

A. M. Marsh; D. A. Williams

J. Vac. Sci. Technol. A 14, 2577–2581 (1996) https://doi.org/10.1116/1.579984

Abstract

View articletitled, Granular superconductor contacts to two‐dimensional electron gases

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A critical evaluation of thermal mass flow meters

S. A. Tison

J. Vac. Sci. Technol. A 14, 2582–2591 (1996) https://doi.org/10.1116/1.579985

Abstract

View articletitled, A critical evaluation of thermal mass flow meters

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Measurements of the tangential momentum accommodation coefficient in the transition flow regime with a spinning rotor gauge

David H. Gabis; Sudarshan K. Loyalka; Truman S. Storvick

J. Vac. Sci. Technol. A 14, 2592–2598 (1996) https://doi.org/10.1116/1.579986

Abstract

View articletitled, Measurements of the tangential momentum accommodation coefficient in the transition flow regime with a spinning rotor gauge

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Effects of readsorption on outgassing rate measurements

P. A. Redhead

J. Vac. Sci. Technol. A 14, 2599–2609 (1996) https://doi.org/10.1116/1.579987

Abstract

View articletitled, Effects of readsorption on outgassing rate measurements

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Miniature peristaltic vacuum pump for use in portable instruments

Harley V. Piltingsrud

J. Vac. Sci. Technol. A 14, 2610–2617 (1996) https://doi.org/10.1116/1.579988

Abstract

View articletitled, Miniature peristaltic vacuum pump for use in portable instruments

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Synchrotron radiation induced gas desorption from a Prototype Large Hadron Collider beam screen at cryogenic temperatures

R. Calder; O. Gröbner; A. G. Mathewson; V. V. Anashin; A. Dranichnikov; O. B. Malyshev

J. Vac. Sci. Technol. A 14, 2618–2623 (1996) https://doi.org/10.1116/1.579989

Abstract

View articletitled, Synchrotron radiation induced gas desorption from a Prototype Large Hadron Collider beam screen at cryogenic temperatures

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Vacuum chamber for the wiggler of the Taiwan Light Source at the Synchrotron Radiation Research Center

D. J. Wang; J. R. Chen; G. Y. Hsiung; J. G. Shyy; J. R. Huang; S. N. Hsu; K. M. Hsiao; Y. C. Liu

J. Vac. Sci. Technol. A 14, 2624–2626 (1996) https://doi.org/10.1116/1.579990

Abstract

View articletitled, Vacuum chamber for the wiggler of the Taiwan Light Source at the Synchrotron Radiation Research Center

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Rarefied gas flow through a long tube at any temperature ratio

Felix Sharipov

J. Vac. Sci. Technol. A 14, 2627–2635 (1996) https://doi.org/10.1116/1.579991

Abstract

View articletitled, Rarefied gas flow through a long tube at any temperature ratio

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Outgassing rate characteristic of a stainless‐steel extreme high vacuum system

Inkyu Chun; Boklae Cho; Sukmin Chung

J. Vac. Sci. Technol. A 14, 2636–2640 (1996) https://doi.org/10.1116/1.579992

Abstract

View articletitled, Outgassing rate characteristic of a stainless‐steel extreme high vacuum system

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Outgassing from aluminum surface layer induced by synchrotron radiation

N. Ota; K. Kanazawa; M. Kobayashi; H. Ishimaru

J. Vac. Sci. Technol. A 14, 2641–2644 (1996) https://doi.org/10.1116/1.579993

Abstract

View articletitled, Outgassing from aluminum surface layer induced by synchrotron radiation

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Secondary ion mass spectroscopy resolution with ultra‐low beam energies

J. B. Clegg; N. S. Smith; M. G. Dowsett; M. J. J. Theunissen; W. B. de Boer

J. Vac. Sci. Technol. A 14, 2645–2650 (1996) https://doi.org/10.1116/1.579994

Abstract

View articletitled, Secondary ion mass spectroscopy resolution with ultra‐low beam energies

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Preparation of crystalline beta barium borate (β‐BaB₂O₄) thin films by opposed‐targets magnetron sputtering

H. B. Liao; R. F. Xiao; P. Yu; G. K. L. Wong; J. Q. Zheng

J. Vac. Sci. Technol. A 14, 2651–2654 (1996) https://doi.org/10.1116/1.579995

Abstract

View articletitled, Preparation of crystalline beta barium borate (β‐BaB2O4) thin films by opposed‐targets magnetron sputtering

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Compact electron cyclotron resonance plasma source for molecular beam epitaxy applications

U. Rössner; D. Brun‐Le Cunff; A. Barski; B. Daudin

J. Vac. Sci. Technol. A 14, 2655–2658 (1996) https://doi.org/10.1116/1.579996

Abstract

View articletitled, Compact electron cyclotron resonance plasma source for molecular beam epitaxy applications

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IBM‐personal computer data acquisition and processing system to upgrade an out‐of‐date mass spectrometer

R. López Callejas; M. J. Pozas Cárdenas; G. Cruz Cruz; L. Meléndez Lugo; E. Chávez Alarcón; R. Valencia Alvarado; M. G. Olayo González; A. Flores Orta

J. Vac. Sci. Technol. A 14, 2659–2661 (1996) https://doi.org/10.1116/1.579997

Abstract

View articletitled, IBM‐personal computer data acquisition and processing system to upgrade an out‐of‐date mass spectrometer

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Thermal stability of rapidly annealed CoSi₂/n‐GaAs and CoSi₂/p‐InP Schottky contacts

G. Eftekhari

J. Vac. Sci. Technol. A 14, 2662–2665 (1996) https://doi.org/10.1116/1.579998

Abstract

View articletitled, Thermal stability of rapidly annealed CoSi2/n‐GaAs and CoSi2/p‐InP Schottky contacts

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Temperature dependence of a‐C:H film deposition in a CH₄ radio frequency plasma

Nobuki Mutsukura; Kazuhiko Saitoh

J. Vac. Sci. Technol. A 14, 2666–2668 (1996) https://doi.org/10.1116/1.579999

Abstract

View articletitled, Temperature dependence of a‐C:H film deposition in a CH4 radio frequency plasma

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Minimum profile ultrahigh vacuum gate valve based on linear/rotary motion feedthrough

Albert Stolow

J. Vac. Sci. Technol. A 14, 2669–2670 (1996) https://doi.org/10.1116/1.580000

Abstract

View articletitled, Minimum profile ultrahigh vacuum gate valve based on linear/rotary motion feedthrough

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Simple, efficient technique for exposing surfaces to hydrogen atoms

V. M. Bermudez

J. Vac. Sci. Technol. A 14, 2671–2673 (1996) https://doi.org/10.1116/1.580001

Abstract

View articletitled, Simple, efficient technique for exposing surfaces to hydrogen atoms

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Hollow‐cathode assisted sputtering

C. J. Backhouse; S. K. Dew; M. J. Brett

J. Vac. Sci. Technol. A 14, 2674–2676 (1996) https://doi.org/10.1116/1.580002

View articletitled, Hollow‐cathode assisted sputtering

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Cheap and stable titanium source for use in oxide molecular beam epitaxy systems

C. D. Theis; D. G. Schlom

J. Vac. Sci. Technol. A 14, 2677–2679 (1996) https://doi.org/10.1116/1.580185

View articletitled, Cheap and stable titanium source for use in oxide molecular beam epitaxy systems

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Erratum: Modeling the pump‐down of a reversibly adsorbed phase. I. Monolayer and submonolayer coverage [J. Vac. Sci. Technol. A 13, 467 (1995)]

P. A. Redhead

J. Vac. Sci. Technol. A 14, 2680 (1996) https://doi.org/10.1116/1.580186

View articletitled, Erratum: Modeling the pump‐down of a reversibly adsorbed phase. I. Monolayer and submonolayer coverage [J. Vac. Sci. Technol. A 13, 467 (1995)]

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Erratum: Dynamic rate and thickness metrology during poly‐Si rapid thermal chemical vapor deposition from SiH₄ using real time in situ mass spectrometry [J. Vac. Sci. Technol. A 14, 267 (1996)]

L. L. Tedder; G. W. Rubloff; B. F. Conaghan; G. N. Parsons

J. Vac. Sci. Technol. A 14, 2680 (1996) https://doi.org/10.1116/1.580187

View articletitled, Erratum: Dynamic rate and thickness metrology during poly‐Si rapid thermal chemical vapor deposition from SiH4 using real time in situ mass spectrometry [J. Vac. Sci. Technol. A 14, 267 (1996)]

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