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Volume 14, Issue 4
July 1996
Journal of Vacuum Science & Technology A Cover Image for Volume 14, Issue 4
All Issues
ISSN 0734-2101
EISSN 1520-8559
Particle emission debris from a KrF laser–plasma x‐ray source
R. Bobkowski; R. Fedosejevs
J. Vac. Sci. Technol. A 14, 1973–1980 (1996) https://doi.org/10.1116/1.580070
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Formation of polytetrafluoroethylene thin films by using CO2 laser evaporation and XeCl laser ablation
Muneto Inayoshi; Masaru Hori; Toshio Goto; Mineo Hiramatsu; Masahito Nawata; Shuzo Hattori
J. Vac. Sci. Technol. A 14, 1981–1985 (1996) https://doi.org/10.1116/1.580071
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Synthesis and deposition of silicon nitride films by laser reactive ablation of silicon in low pressure ammonia: A parametric study
I. N. Mihãilescu; Adriana Litã; V. S. Teodorescu; Eniko Gyorgy; Rodica Alexandrescu; A. Luches; M. Martino; A. Barboricã
J. Vac. Sci. Technol. A 14, 1986–1994 (1996) https://doi.org/10.1116/1.580072
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YBa2Cu3O7−x thin film over 3 in. substrate using off‐axis excimer laser deposition
T. Nagaishi; H. Itozaki
J. Vac. Sci. Technol. A 14, 1995–1998 (1996) https://doi.org/10.1116/1.580073
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Behavior of Si atoms in a silane electron cyclotron resonance plasma at high dissociations
Y. Yamamoto; M. Hori; T. Goto; M. Hiramatsu
J. Vac. Sci. Technol. A 14, 1999–2003 (1996) https://doi.org/10.1116/1.580074
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Fluorocarbon radicals and surface reactions in fluorocarbon high density etching plasma. I. O2 addition to electron cyclotron resonance plasma employing CHF3
Kunimasa Takahashi; Masaru Hori; Toshio Goto
J. Vac. Sci. Technol. A 14, 2004–2010 (1996) https://doi.org/10.1116/1.580075
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Fluorocarbon radicals and surface reactions in fluorocarbon high density etching plasma. II. H2 addition to electron cyclotron resonance plasma employing CHF3
Kunimasa Takahashi; Masaru Hori; Toshio Goto
J. Vac. Sci. Technol. A 14, 2011–2019 (1996) https://doi.org/10.1116/1.580076
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Relating electric field distribution of an electron cyclotron resonance cavity to dry etching characteristics
K. K. Ko; S. W. Pang; M. Dahimene
J. Vac. Sci. Technol. A 14, 2020–2025 (1996) https://doi.org/10.1116/1.580077
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Ion desorption stability in superconducting high energy physics proton colliders
William C. Turner
J. Vac. Sci. Technol. A 14, 2026–2038 (1996) https://doi.org/10.1116/1.580078
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Diamond‐like carbon film synthesized by ion beam assisted deposition and its tribological properties
Xiaomimg He; Wenzhi Li; Hengde Li
J. Vac. Sci. Technol. A 14, 2039–2047 (1996) https://doi.org/10.1116/1.580079
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Radio frequency matching for helicon plasma sources
J. P. Rayner; A. D. Cheetham; G. N. French
J. Vac. Sci. Technol. A 14, 2048–2055 (1996) https://doi.org/10.1116/1.580080
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Reactive ion beam assisted deposition of zirconium oxyfluoride thin films
U. J. Gibson; K. D. Cornett
J. Vac. Sci. Technol. A 14, 2056–2061 (1996) https://doi.org/10.1116/1.580081
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Study of surface reactions during plasma enhanced chemical vapor deposition of SiO2 from SiH4, O2, and Ar plasma
Sang M. Han; Eray S. Aydil
J. Vac. Sci. Technol. A 14, 2062–2070 (1996) https://doi.org/10.1116/1.580082
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Reactor modeling for radio frequency plasma deposition of SiNxHy: Comparison between two reactor designs
H. Caquineau; G. Dupont; B. Despax; J. P. Couderc
J. Vac. Sci. Technol. A 14, 2071–2082 (1996) https://doi.org/10.1116/1.580083
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CFX radical generation by plasma interaction with fluorocarbon films on the reactor wall
Koji Miyata; Masaru Hori; Toshio Goto
J. Vac. Sci. Technol. A 14, 2083–2087 (1996) https://doi.org/10.1116/1.580084
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SiOxNy films deposited by remote plasma enhanced chemical vapor deposition using SiCl4
O. Sanchez; M. A. Aguilar; C. Falcony; J. M. Martinez‐Duart; J. M. Albella
J. Vac. Sci. Technol. A 14, 2088–2093 (1996) https://doi.org/10.1116/1.580085
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Electron‐beam controlled radio frequency discharges for plasma processing
Mark J. Kushner; Wenli Z. Collison; David N. Ruzic
J. Vac. Sci. Technol. A 14, 2094–2101 (1996) https://doi.org/10.1116/1.580086
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Vacuum ultraviolet emission from radio frequency plasmas of SF6 and CF4
Jan Li; J. W. McConkey
J. Vac. Sci. Technol. A 14, 2102–2105 (1996) https://doi.org/10.1116/1.580087
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Probe for measuring ion beam angular distribution
J. R. Kahn; H. R. Kaufman; C. A. Phillips; R. S. Robinson
J. Vac. Sci. Technol. A 14, 2106–2112 (1996) https://doi.org/10.1116/1.580088
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Spatial distributions of electron density and electron temperature in direct current glow discharge
W. H. Tao; M. A. Prelas; H. K. Yasuda
J. Vac. Sci. Technol. A 14, 2113–2121 (1996) https://doi.org/10.1116/1.580089
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Analysis of pulse‐time modulated high‐density discharges
M. Meyyappan
J. Vac. Sci. Technol. A 14, 2122–2126 (1996) https://doi.org/10.1116/1.580090
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Fluorocarbon high density plasmas. VII. Investigation of selective SiO2‐to‐Si3N4 high density plasma etch processes
Ying Zhang; Gottlieb S. Oehrlein; Ferdinand H. Bell
J. Vac. Sci. Technol. A 14, 2127–2137 (1996) https://doi.org/10.1116/1.580091
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Ion‐assisted Si/XeF2‐etching: Influence of ion/neutral flux ratio and ion energy
M. J. M. Vugts; L. J. F. Hermans; H. C. W. Beijerinck
J. Vac. Sci. Technol. A 14, 2138–2150 (1996) https://doi.org/10.1116/1.580038
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Role of nitrogen in the downstream etching of silicon nitride
M. G. Blain; T. L. Meisenheimer; J. E. Stevens
J. Vac. Sci. Technol. A 14, 2151–2157 (1996) https://doi.org/10.1116/1.580039
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Negative ion density in inductively coupled chlorine plasmas
G. A. Hebner
J. Vac. Sci. Technol. A 14, 2158–2162 (1996) https://doi.org/10.1116/1.580040
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Characterization of helicon wave plasma designed for direct current sputtering
J. Q. Zhang; Y. Setsuhara; T. Ariyasu; S. Miyake
J. Vac. Sci. Technol. A 14, 2163–2168 (1996) https://doi.org/10.1116/1.580041
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Origin of stresses in sputtered elemental and alloy thin films
C. Hudson; R. E. Somekh
J. Vac. Sci. Technol. A 14, 2169–2174 (1996) https://doi.org/10.1116/1.580042
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Electrostatic scattering of ionic species in low pressure sputtering of Ti and TiN
C. J. Backhouse; K. Robbie; J. Parks; J. N. Broughton; S. Dew; G. Este; M. J. Brett
J. Vac. Sci. Technol. A 14, 2175–2181 (1996) https://doi.org/10.1116/1.580043
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Discharge characteristics of a facing target sputtering device using unbalanced magnetrons
G. K. Muralidhar; J. Musil; S. Kadlec
J. Vac. Sci. Technol. A 14, 2182–2186 (1996) https://doi.org/10.1116/1.580044
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High‐rate magnetron sputtering
J. Musil; A. Rajský; A. J. Bell; J. Matouš; M. Čepera; J. Zeman
J. Vac. Sci. Technol. A 14, 2187–2191 (1996) https://doi.org/10.1116/1.580045
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Oxidation‐enhanced roughening of thin Co films during sputtering by O+2 ions
B. Mohadjeri; M. Petravić; B. G. Svensson
J. Vac. Sci. Technol. A 14, 2192–2201 (1996) https://doi.org/10.1116/1.580046
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Microstructure of radio frequency sputtered Ag1−xSix alloys
K. D. Leedy; J. M. Rigsbee
J. Vac. Sci. Technol. A 14, 2202–2206 (1996) https://doi.org/10.1116/1.580047
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Reactive sputter‐deposition and characterization of lead oxide films
Y. Pauleau; E. Harry
J. Vac. Sci. Technol. A 14, 2207–2214 (1996) https://doi.org/10.1116/1.580048
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Characteristics of reactively sputtered Pt–SnO2 thin films for CO gas sensors
M. Di Giulio; G. Micocci; A. Serra; A. Tepore; R. Rella; P. Siciliano
J. Vac. Sci. Technol. A 14, 2215–2219 (1996) https://doi.org/10.1116/1.580049
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Postdeposition annealing of radio frequency magnetron sputtered ZnO films
M. K. Puchert; P. Y. Timbrell; R. N. Lamb
J. Vac. Sci. Technol. A 14, 2220–2230 (1996) https://doi.org/10.1116/1.580050
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Computational modeling of reactive gas modulation in radio frequency reactive sputtering
Hidetoshi Sekiguchi; Takashi Murakami; Atsushi Kanzawa; Takahiro Imai; Takuya Honda
J. Vac. Sci. Technol. A 14, 2231–2234 (1996) https://doi.org/10.1116/1.580051
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Compact‐heating stage for use in sputtering in active oxygen gas environments
Y. Igarashi; Y. Fujino; T. Takahashi
J. Vac. Sci. Technol. A 14, 2235–2237 (1996) https://doi.org/10.1116/1.580052
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Low‐temperature growth of aluminum nitride thin films on silicon by reactive radio frequency magnetron sputtering*
Chien‐Chuan Cheng; Ying‐Chung Chen; Horng‐Jwo Wang; Wen‐Rong Chen
J. Vac. Sci. Technol. A 14, 2238–2242 (1996) https://doi.org/10.1116/1.580053
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Physical properties and chemical states of rf sputter deposited SiWOx films
Itaru Shibata; Toshikazu Nishide; Toshinori Hasegawa
J. Vac. Sci. Technol. A 14, 2243–2246 (1996) https://doi.org/10.1116/1.580054
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Formation of high temperature phases in sputter deposited Ti‐based films below 100 °C
J. Musil; A. J. Bell; J. Vlček; T. Hurkmans
J. Vac. Sci. Technol. A 14, 2247–2250 (1996) https://doi.org/10.1116/1.580055
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Cu (In,Ga)Se2 thin films and solar cells prepared by selenization of metallic precursors
Bülent M. Başol; Vijay K. Kapur; Arvind Halani; Craig R. Leidholm; Jon Sharp; James R. Sites; Amy Swartzlander; Richard Matson; Harin Ullal
J. Vac. Sci. Technol. A 14, 2251–2256 (1996) https://doi.org/10.1116/1.580056
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Analysis of aluminum nitride epitaxial growth by low pressure metal organic chemical vapor deposition
R. C. Buggeln; M. Meyyappan; S. J. Shamroth
J. Vac. Sci. Technol. A 14, 2257–2262 (1996) https://doi.org/10.1116/1.580057
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Preparation and characterization of a well‐ordered surface on a Si(001) substrate with a buried metal layer for application of infrared reflection spectroscopy
Yoshihiro Kobayashi; Koji Sumitomo; Kuniyil Prabhakaran; Toshio Ogino
J. Vac. Sci. Technol. A 14, 2263–2268 (1996) https://doi.org/10.1116/1.580058
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Investigation of deep levels in ZnSe:Cl films grown by molecular beam epitaxy
L. Hernández; O. de Melo; M. Meléndez‐Lira; Z. Rivera‐Alvarez; I. Hernández‐Calderón
J. Vac. Sci. Technol. A 14, 2269–2274 (1996) https://doi.org/10.1116/1.580059
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Surface‐extended x‐ray absorption fine structure study of silicon deposited onto GaAs(110)
M. L. Hasnaoui; A. M. Flank; M. Pompa; P. Lagarde
J. Vac. Sci. Technol. A 14, 2275–2281 (1996) https://doi.org/10.1116/1.580060
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Adsorption controlled Si(1−x)Gex growth during chemical vapor deposition
H. Kühne; A. Fischer; Th. Morgenstern; P. Zaumseil
J. Vac. Sci. Technol. A 14, 2282–2288 (1996) https://doi.org/10.1116/1.580061
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Visualization of a buried organic interface by imaging time‐of‐flight secondary ion mass spectrometry and scanning Auger microprobe of an ion‐beam crater edge
Patrick C. Schamberger; Gary L. Jones; Joseph A. Gardella, Jr.; Patrick J. McKeown; Larry E. Davis
J. Vac. Sci. Technol. A 14, 2289–2302 (1996) https://doi.org/10.1116/1.580062
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Cleaning thin‐film diamond surfaces for device fabrication: An Auger electron spectroscopic study
Bhaswar Baral; Simon S. M. Chan; Richard B. Jackman
J. Vac. Sci. Technol. A 14, 2303–2307 (1996) https://doi.org/10.1116/1.580063
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Isothermal hydrogen desorption from the diamond (100)2×1 surface
M. McGonigal; M. L. Kempel; M. S. Hammond; K. D. Jamison
J. Vac. Sci. Technol. A 14, 2308–2314 (1996) https://doi.org/10.1116/1.580064
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Time‐resolved mass spectrometry in rough vacuum environment
J. Laimer; O. Schnabl; C. G. Schwärzler; H. Störi
J. Vac. Sci. Technol. A 14, 2315–2324 (1996) https://doi.org/10.1116/1.580065
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Thermal stability of photochemical native oxide films on Hg1−xCdxTe
G. H. Winton; N. Warrington; L. Faraone
J. Vac. Sci. Technol. A 14, 2325–2330 (1996) https://doi.org/10.1116/1.580017
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Numerical ellipsometry: Applications of a new algorithm for real‐time, in situ film growth monitoring
Frank K. Urban, III; John Craig Comfort
J. Vac. Sci. Technol. A 14, 2331–2336 (1996) https://doi.org/10.1116/1.580018
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Molecular beam sampling to analyze the reaction mechanism of chemical vapor deposition
Y. Tsutsumi; M. Ikegawa; T. Usui; Y. Ichikawa; K. Watanabe; J. Kobayashi
J. Vac. Sci. Technol. A 14, 2337–2342 (1996) https://doi.org/10.1116/1.580019
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Infrared diode laser absorption spectroscopy measurements of CFX (X=1–3) radical densities in electron cyclotron resonance plasmas employing C4F8, C2F6, CF4, and CHF3 gases
Koji Miyata; Masaru Hori; Toshio Goto
J. Vac. Sci. Technol. A 14, 2343–2350 (1996) https://doi.org/10.1116/1.580020
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Atomic force microscopy of amorphous hydrogenated carbon–nitrogen films deposited by radio‐frequency‐plasma decomposition of methane–ammonia gas mixtures
R. Prioli; S. I. Zanette; A. O. Caride; D. F. Franceschini; F. L. Freire, Jr.
J. Vac. Sci. Technol. A 14, 2351–2355 (1996) https://doi.org/10.1116/1.580021
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In situ wafer temperature monitoring of silicon etching using diffuse reflectance spectroscopy
J. L. Booth; B. T. Beard; J. E. Stevens; M. G. Blain; T. L. Meisenheimer
J. Vac. Sci. Technol. A 14, 2356–2360 (1996) https://doi.org/10.1116/1.580022
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Relative sensitivity factors of B related to SiGe alloy composition on secondary ion mass spectrometry with an oxygen primary ion beam
Kiyohisa Fujinaga
J. Vac. Sci. Technol. A 14, 2361–2365 (1996) https://doi.org/10.1116/1.580023
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Surface chemical reaction between polycarbonate and kilo‐electron‐volt energy Ar+ ion in oxygen environment
Won‐Kook Choi; Seok‐Keun Koh; Hyung‐Jin Jung
J. Vac. Sci. Technol. A 14, 2366–2371 (1996) https://doi.org/10.1116/1.580024
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Interaction of water with clean and gallium precovered Fe(111) surfaces
P. Jiang; M. W. Zappone; Steven L. Bernasek; A. Robertson, Jr.
J. Vac. Sci. Technol. A 14, 2372–2377 (1996) https://doi.org/10.1116/1.580025
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Microtribological studies of unlubricated and lubricated surfaces using atomic force/friction force microscopy
Vilas N. Koinkar; Bharat Bhushan
J. Vac. Sci. Technol. A 14, 2378–2391 (1996) https://doi.org/10.1116/1.580026
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Comparison of submicron particle analysis by Auger electron spectroscopy, time‐of‐flight secondary ion mass spectrometry, and secondary electron microscopy with energy dispersive x‐ray spectroscopy
Kenton D. Childs; David Narum; Lori A. LaVanier; Patricia M. Lindley; Bruno W. Schueler; George Mulholland; Alain C. Diebold
J. Vac. Sci. Technol. A 14, 2392–2404 (1996) https://doi.org/10.1116/1.580027
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Recoil spectrometry of thin film reactions in the Pd/InP system
Leif Persson; Mohamed El Bouanani; Mikael Hult; Patrik Jönsson; Harry J. Whitlow; Margaretha Andersson; Kristina Georgsson; Ian F. Bubb; Peter N. Johnston; Scott R. Walker; David D. Cohen; Nick Dytlewski; Carina Zaring; Mikael Östling
J. Vac. Sci. Technol. A 14, 2405–2413 (1996) https://doi.org/10.1116/1.580028
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Focusing glass capillary array molecular beam inlet for a high sensitivity mass spectrometer system
Y. Ma; B. Y. H. Liu; H. S. Lee; K. Mauersberger; J. Morton
J. Vac. Sci. Technol. A 14, 2414–2417 (1996) https://doi.org/10.1116/1.580029
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Physical properties of diamondlike carbon films deposited in mixed atmospheres of C2H4–Ar, C2H4–H2, and C2H4–N2
Masatoshi Nakayama; Yasuhiro Matsuba; Junichi Shimamura; Yasuyuki Yamamoto; Hiroshi Chihara; Hideo Kato; Kazunori Maruyama; Kiichiro Kamata
J. Vac. Sci. Technol. A 14, 2418–2426 (1996) https://doi.org/10.1116/1.580030
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Conductance and leakage in superconducting tunnel junctions
M. S. Goodchild; Z. H. Barber; M. G. Blamire
J. Vac. Sci. Technol. A 14, 2427–2432 (1996) https://doi.org/10.1116/1.580031
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Schottky barrier at the Au/Gap (110) interface
M. Fanfoni; C. Goletti; P. Chiaradia; W. Ng; F. Cerrina; Y. Hwu; A. Terrasi; G. Margaritondo
J. Vac. Sci. Technol. A 14, 2433–2436 (1996) https://doi.org/10.1116/1.580032
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Characterization of as‐grown and annealed thin SiO2 films formed in 0.1 M HCl
E. M. Allegretto; J. A. Bardwell
J. Vac. Sci. Technol. A 14, 2437–2442 (1996) https://doi.org/10.1116/1.580033
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Solid phase epitaxy with x‐ray irradiation using a compact synchrotron radiation source AURORA
Takanori Katoh; Hironari Yamada; Fumio Sato; Yoshiyuki Hirano; Jun‐ichi Chikawa
J. Vac. Sci. Technol. A 14, 2443–2447 (1996) https://doi.org/10.1116/1.580034
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Electronic states of a clean Si(110) 16×2 surface studied by angle resolved photoemission and surface differential reflectivity
A. Crincenti; B. Nesterenko; P. Perfetti; G. LeLay; C. Sebenne
J. Vac. Sci. Technol. A 14, 2448–2453 (1996) https://doi.org/10.1116/1.580035
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Effect of a surface layer on the stress relaxation of thin films
M. D. Thouless; K. P. Rodbell; C. Cabral, Jr.
J. Vac. Sci. Technol. A 14, 2454–2461 (1996) https://doi.org/10.1116/1.580036
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Residual macroscopic stress in highly preferentially oriented titanium nitride coatings deposited on various steel types
C. Quaeyhaegens; G. Knuyt; L. M. Stals
J. Vac. Sci. Technol. A 14, 2462–2469 (1996) https://doi.org/10.1116/1.580037
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Changes in refractive index and in chemical state of synchrotron radiation irradiated fluorinated polyimide films
Yasuko Yamada Maruo; Shigekuni Sasaki; Tsuneyuki Haga; Hiroo Kinoshita; Toshiyuki Horiuchi; Toshiaki Tamamura
J. Vac. Sci. Technol. A 14, 2470–2474 (1996) https://doi.org/10.1116/1.580003
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Photoelectron spectroscopy during pulsed laser melting of surfaces
G. Gantner; H.‐G. Boyen; P. Oelhafen; K. Rink
J. Vac. Sci. Technol. A 14, 2475–2479 (1996) https://doi.org/10.1116/1.580004
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Photoluminescence measurements in the phase transition region for CdS thin films
H. Ariza‐Calderon; R. Lozada‐Morales; O. Zelaya‐Angel; J. G. Mendoza‐Alvarez; L. Baños
J. Vac. Sci. Technol. A 14, 2480–2482 (1996) https://doi.org/10.1116/1.580005
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Measurement of the elastic stress of thin films deposited on gallium arsenide
R. E. Mihailovich; T. Koscica; R. J. Zeto
J. Vac. Sci. Technol. A 14, 2483–2487 (1996) https://doi.org/10.1116/1.580006
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Characterization of silicon oxynitride thin films by infrared reflection absorption spectroscopy
M. Firon; C. Bonnelle; A. Mayeux
J. Vac. Sci. Technol. A 14, 2488–2492 (1996) https://doi.org/10.1116/1.580007
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Strengthening of Al2O3‐based ceramics by metalorganic chemical vapor deposition
I. Yu. Konyashin
J. Vac. Sci. Technol. A 14, 2493–2498 (1996) https://doi.org/10.1116/1.580008
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Effects of Y or Gd addition on the structures and resistivities of Al thin films
Shinji Takayama; Naganori Tsutsui
J. Vac. Sci. Technol. A 14, 2499–2504 (1996) https://doi.org/10.1116/1.580009
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Formation of chromium oxide on 316L austenitic stainless steel
Tadahiro Ohmi; Yoshinori Nakagawa; Masakazu Nakamura; Atushi Ohki; Tomoyuki Koyama
J. Vac. Sci. Technol. A 14, 2505–2510 (1996) https://doi.org/10.1116/1.580010
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Properties of radio frequency–sputtered alumina films on flat and grooved substrates
C. A. Ross
J. Vac. Sci. Technol. A 14, 2511–2516 (1996) https://doi.org/10.1116/1.580011
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Characteristics of Cu thin films on a glass substrate by partially ionized beam deposition at room temperature
Y. S. Yoon; K. H. Kim; H. G. Jang; H. J. Jung; S. K. Koh
J. Vac. Sci. Technol. A 14, 2517–2521 (1996) https://doi.org/10.1116/1.580012
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Effect of annealing on Ag films on Pt(111)
J. S. Tsay; C. S. Shern
J. Vac. Sci. Technol. A 14, 2522–2526 (1996) https://doi.org/10.1116/1.580013
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High temperature oxidation of thin CrN coatings deposited on steel
I. Milošev; J. M. Abels; H.‐H. Strehblow; B. Navinšek; M. Metikoš‐Hukovič
J. Vac. Sci. Technol. A 14, 2527–2534 (1996) https://doi.org/10.1116/1.580014
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Effect of energetic particles on the residual stresses in nonhydrogenated amorphous carbon films deposited on grounded substrates by dc magnetron sputtering
E. Mounier; Y. Pauleau
J. Vac. Sci. Technol. A 14, 2535–2543 (1996) https://doi.org/10.1116/1.580015
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Surface flatness of polished metal single crystals
C. Emil Tripa; John T. Yates, Jr.
J. Vac. Sci. Technol. A 14, 2544–2546 (1996) https://doi.org/10.1116/1.580016
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Growth dynamics and surface fine structure of ZnO ultrafine particle films
Zhao Dachun; Qu Zhongkai; Pan Xiaoren
J. Vac. Sci. Technol. A 14, 2547–2550 (1996) https://doi.org/10.1116/1.579979
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Direct observation of β‐TaH phase precipitation in tantalum–hydrogen solid solution
C. L. Chen; D. S. Zhou; T. E. Mitchell; H. Q. Ye
J. Vac. Sci. Technol. A 14, 2551–2553 (1996) https://doi.org/10.1116/1.579980
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Growth of ultrathin crystalline Al2O3 films on Ru(0001) and Re(0001) surfaces
Yutong Wu; Eric Garfunkel; Theodore E. Madey
J. Vac. Sci. Technol. A 14, 2554–2563 (1996) https://doi.org/10.1116/1.579981
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Solid‐state reaction of Ti and Ni thin films with aluminum nitride
Xiangjun He; Kun Tao; Yudian Fan
J. Vac. Sci. Technol. A 14, 2564–2569 (1996) https://doi.org/10.1116/1.579982
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Whiskers grown on aluminum thin films during heat treatments
Kenji Hinode; Yoshio Homma; Yasushi Sasaki
J. Vac. Sci. Technol. A 14, 2570–2576 (1996) https://doi.org/10.1116/1.579983
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Granular superconductor contacts to two‐dimensional electron gases
A. M. Marsh; D. A. Williams
J. Vac. Sci. Technol. A 14, 2577–2581 (1996) https://doi.org/10.1116/1.579984
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A critical evaluation of thermal mass flow meters
S. A. Tison
J. Vac. Sci. Technol. A 14, 2582–2591 (1996) https://doi.org/10.1116/1.579985
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Measurements of the tangential momentum accommodation coefficient in the transition flow regime with a spinning rotor gauge
David H. Gabis; Sudarshan K. Loyalka; Truman S. Storvick
J. Vac. Sci. Technol. A 14, 2592–2598 (1996) https://doi.org/10.1116/1.579986
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Effects of readsorption on outgassing rate measurements
P. A. Redhead
J. Vac. Sci. Technol. A 14, 2599–2609 (1996) https://doi.org/10.1116/1.579987
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Miniature peristaltic vacuum pump for use in portable instruments
Harley V. Piltingsrud
J. Vac. Sci. Technol. A 14, 2610–2617 (1996) https://doi.org/10.1116/1.579988
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Synchrotron radiation induced gas desorption from a Prototype Large Hadron Collider beam screen at cryogenic temperatures
R. Calder; O. Gröbner; A. G. Mathewson; V. V. Anashin; A. Dranichnikov; O. B. Malyshev
J. Vac. Sci. Technol. A 14, 2618–2623 (1996) https://doi.org/10.1116/1.579989
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Vacuum chamber for the wiggler of the Taiwan Light Source at the Synchrotron Radiation Research Center
D. J. Wang; J. R. Chen; G. Y. Hsiung; J. G. Shyy; J. R. Huang; S. N. Hsu; K. M. Hsiao; Y. C. Liu
J. Vac. Sci. Technol. A 14, 2624–2626 (1996) https://doi.org/10.1116/1.579990
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Rarefied gas flow through a long tube at any temperature ratio
Felix Sharipov
J. Vac. Sci. Technol. A 14, 2627–2635 (1996) https://doi.org/10.1116/1.579991
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Outgassing rate characteristic of a stainless‐steel extreme high vacuum system
Inkyu Chun; Boklae Cho; Sukmin Chung
J. Vac. Sci. Technol. A 14, 2636–2640 (1996) https://doi.org/10.1116/1.579992
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Outgassing from aluminum surface layer induced by synchrotron radiation
N. Ota; K. Kanazawa; M. Kobayashi; H. Ishimaru
J. Vac. Sci. Technol. A 14, 2641–2644 (1996) https://doi.org/10.1116/1.579993
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Secondary ion mass spectroscopy resolution with ultra‐low beam energies
J. B. Clegg; N. S. Smith; M. G. Dowsett; M. J. J. Theunissen; W. B. de Boer
J. Vac. Sci. Technol. A 14, 2645–2650 (1996) https://doi.org/10.1116/1.579994
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Preparation of crystalline beta barium borate (β‐BaB2O4) thin films by opposed‐targets magnetron sputtering
H. B. Liao; R. F. Xiao; P. Yu; G. K. L. Wong; J. Q. Zheng
J. Vac. Sci. Technol. A 14, 2651–2654 (1996) https://doi.org/10.1116/1.579995
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Compact electron cyclotron resonance plasma source for molecular beam epitaxy applications
U. Rössner; D. Brun‐Le Cunff; A. Barski; B. Daudin
J. Vac. Sci. Technol. A 14, 2655–2658 (1996) https://doi.org/10.1116/1.579996
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IBM‐personal computer data acquisition and processing system to upgrade an out‐of‐date mass spectrometer
R. López Callejas; M. J. Pozas Cárdenas; G. Cruz Cruz; L. Meléndez Lugo; E. Chávez Alarcón; R. Valencia Alvarado; M. G. Olayo González; A. Flores Orta
J. Vac. Sci. Technol. A 14, 2659–2661 (1996) https://doi.org/10.1116/1.579997
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Thermal stability of rapidly annealed CoSi2/n‐GaAs and CoSi2/p‐InP Schottky contacts
G. Eftekhari
J. Vac. Sci. Technol. A 14, 2662–2665 (1996) https://doi.org/10.1116/1.579998
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Temperature dependence of a‐C:H film deposition in a CH4 radio frequency plasma
Nobuki Mutsukura; Kazuhiko Saitoh
J. Vac. Sci. Technol. A 14, 2666–2668 (1996) https://doi.org/10.1116/1.579999
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Minimum profile ultrahigh vacuum gate valve based on linear/rotary motion feedthrough
Albert Stolow
J. Vac. Sci. Technol. A 14, 2669–2670 (1996) https://doi.org/10.1116/1.580000
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Simple, efficient technique for exposing surfaces to hydrogen atoms
V. M. Bermudez
J. Vac. Sci. Technol. A 14, 2671–2673 (1996) https://doi.org/10.1116/1.580001
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Hollow‐cathode assisted sputtering
C. J. Backhouse; S. K. Dew; M. J. Brett
J. Vac. Sci. Technol. A 14, 2674–2676 (1996) https://doi.org/10.1116/1.580002
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Cheap and stable titanium source for use in oxide molecular beam epitaxy systems
C. D. Theis; D. G. Schlom
J. Vac. Sci. Technol. A 14, 2677–2679 (1996) https://doi.org/10.1116/1.580185
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Erratum: Modeling the pump‐down of a reversibly adsorbed phase. I. Monolayer and submonolayer coverage [J. Vac. Sci. Technol. A 13, 467 (1995)]
P. A. Redhead
J. Vac. Sci. Technol. A 14, 2680 (1996) https://doi.org/10.1116/1.580186
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Erratum: Dynamic rate and thickness metrology during poly‐Si rapid thermal chemical vapor deposition from SiH4 using real time in situ mass spectrometry [J. Vac. Sci. Technol. A 14, 267 (1996)]
L. L. Tedder; G. W. Rubloff; B. F. Conaghan; G. N. Parsons
J. Vac. Sci. Technol. A 14, 2680 (1996) https://doi.org/10.1116/1.580187
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