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Formation of polytetrafluoroethylene thin films by using CO2 laser evaporation and XeCl laser ablation
J. Vac. Sci. Technol. A 14, 1981–1985 (1996)
https://doi.org/10.1116/1.580071
Synthesis and deposition of silicon nitride films by laser reactive ablation of silicon in low pressure ammonia: A parametric study
I. N. Mihãilescu; Adriana Litã; V. S. Teodorescu; Eniko Gyorgy; Rodica Alexandrescu; A. Luches; M. Martino; A. Barboricã
J. Vac. Sci. Technol. A 14, 1986–1994 (1996)
https://doi.org/10.1116/1.580072
YBa2Cu3O7−x thin film over 3 in. substrate using off‐axis excimer laser deposition
J. Vac. Sci. Technol. A 14, 1995–1998 (1996)
https://doi.org/10.1116/1.580073
Behavior of Si atoms in a silane electron cyclotron resonance plasma at high dissociations
J. Vac. Sci. Technol. A 14, 1999–2003 (1996)
https://doi.org/10.1116/1.580074
Relating electric field distribution of an electron cyclotron resonance cavity to dry etching characteristics
J. Vac. Sci. Technol. A 14, 2020–2025 (1996)
https://doi.org/10.1116/1.580077
Diamond‐like carbon film synthesized by ion beam assisted deposition and its tribological properties
J. Vac. Sci. Technol. A 14, 2039–2047 (1996)
https://doi.org/10.1116/1.580079
Reactive ion beam assisted deposition of zirconium oxyfluoride thin films
J. Vac. Sci. Technol. A 14, 2056–2061 (1996)
https://doi.org/10.1116/1.580081
Study of surface reactions during plasma enhanced chemical vapor deposition of SiO2 from SiH4, O2, and Ar plasma
J. Vac. Sci. Technol. A 14, 2062–2070 (1996)
https://doi.org/10.1116/1.580082
Reactor modeling for radio frequency plasma deposition of SiNxHy: Comparison between two reactor designs
J. Vac. Sci. Technol. A 14, 2071–2082 (1996)
https://doi.org/10.1116/1.580083
CFX radical generation by plasma interaction with fluorocarbon films on the reactor wall
J. Vac. Sci. Technol. A 14, 2083–2087 (1996)
https://doi.org/10.1116/1.580084
SiOxNy films deposited by remote plasma enhanced chemical vapor deposition using SiCl4
J. Vac. Sci. Technol. A 14, 2088–2093 (1996)
https://doi.org/10.1116/1.580085
Electron‐beam controlled radio frequency discharges for plasma processing
J. Vac. Sci. Technol. A 14, 2094–2101 (1996)
https://doi.org/10.1116/1.580086
Probe for measuring ion beam angular distribution
J. Vac. Sci. Technol. A 14, 2106–2112 (1996)
https://doi.org/10.1116/1.580088
Spatial distributions of electron density and electron temperature in direct current glow discharge
J. Vac. Sci. Technol. A 14, 2113–2121 (1996)
https://doi.org/10.1116/1.580089
Fluorocarbon high density plasmas. VII. Investigation of selective SiO2‐to‐Si3N4 high density plasma etch processes
J. Vac. Sci. Technol. A 14, 2127–2137 (1996)
https://doi.org/10.1116/1.580091
Ion‐assisted Si/XeF2‐etching: Influence of ion/neutral flux ratio and ion energy
J. Vac. Sci. Technol. A 14, 2138–2150 (1996)
https://doi.org/10.1116/1.580038
Role of nitrogen in the downstream etching of silicon nitride
J. Vac. Sci. Technol. A 14, 2151–2157 (1996)
https://doi.org/10.1116/1.580039
Characterization of helicon wave plasma designed for direct current sputtering
J. Vac. Sci. Technol. A 14, 2163–2168 (1996)
https://doi.org/10.1116/1.580041
Electrostatic scattering of ionic species in low pressure sputtering of Ti and TiN
J. Vac. Sci. Technol. A 14, 2175–2181 (1996)
https://doi.org/10.1116/1.580043
Discharge characteristics of a facing target sputtering device using unbalanced magnetrons
J. Vac. Sci. Technol. A 14, 2182–2186 (1996)
https://doi.org/10.1116/1.580044
High‐rate magnetron sputtering
J. Vac. Sci. Technol. A 14, 2187–2191 (1996)
https://doi.org/10.1116/1.580045
Oxidation‐enhanced roughening of thin Co films during sputtering by O+2 ions
J. Vac. Sci. Technol. A 14, 2192–2201 (1996)
https://doi.org/10.1116/1.580046
Characteristics of reactively sputtered Pt–SnO2 thin films for CO gas sensors
J. Vac. Sci. Technol. A 14, 2215–2219 (1996)
https://doi.org/10.1116/1.580049
Postdeposition annealing of radio frequency magnetron sputtered ZnO films
J. Vac. Sci. Technol. A 14, 2220–2230 (1996)
https://doi.org/10.1116/1.580050
Computational modeling of reactive gas modulation in radio frequency reactive sputtering
J. Vac. Sci. Technol. A 14, 2231–2234 (1996)
https://doi.org/10.1116/1.580051
Compact‐heating stage for use in sputtering in active oxygen gas environments
J. Vac. Sci. Technol. A 14, 2235–2237 (1996)
https://doi.org/10.1116/1.580052
Low‐temperature growth of aluminum nitride thin films on silicon by reactive radio frequency magnetron sputtering*
J. Vac. Sci. Technol. A 14, 2238–2242 (1996)
https://doi.org/10.1116/1.580053
Physical properties and chemical states of rf sputter deposited SiWOx films
J. Vac. Sci. Technol. A 14, 2243–2246 (1996)
https://doi.org/10.1116/1.580054
Formation of high temperature phases in sputter deposited Ti‐based films below 100 °C
J. Vac. Sci. Technol. A 14, 2247–2250 (1996)
https://doi.org/10.1116/1.580055
Cu (In,Ga)Se2 thin films and solar cells prepared by selenization of metallic precursors
Bülent M. Başol; Vijay K. Kapur; Arvind Halani; Craig R. Leidholm; Jon Sharp; James R. Sites; Amy Swartzlander; Richard Matson; Harin Ullal
J. Vac. Sci. Technol. A 14, 2251–2256 (1996)
https://doi.org/10.1116/1.580056
Analysis of aluminum nitride epitaxial growth by low pressure metal organic chemical vapor deposition
J. Vac. Sci. Technol. A 14, 2257–2262 (1996)
https://doi.org/10.1116/1.580057
Investigation of deep levels in ZnSe:Cl films grown by molecular beam epitaxy
J. Vac. Sci. Technol. A 14, 2269–2274 (1996)
https://doi.org/10.1116/1.580059
Surface‐extended x‐ray absorption fine structure study of silicon deposited onto GaAs(110)
J. Vac. Sci. Technol. A 14, 2275–2281 (1996)
https://doi.org/10.1116/1.580060
Adsorption controlled Si(1−x)Gex growth during chemical vapor deposition
J. Vac. Sci. Technol. A 14, 2282–2288 (1996)
https://doi.org/10.1116/1.580061
Cleaning thin‐film diamond surfaces for device fabrication: An Auger electron spectroscopic study
J. Vac. Sci. Technol. A 14, 2303–2307 (1996)
https://doi.org/10.1116/1.580063
Isothermal hydrogen desorption from the diamond (100)2×1 surface
J. Vac. Sci. Technol. A 14, 2308–2314 (1996)
https://doi.org/10.1116/1.580064
Time‐resolved mass spectrometry in rough vacuum environment
J. Vac. Sci. Technol. A 14, 2315–2324 (1996)
https://doi.org/10.1116/1.580065
Thermal stability of photochemical native oxide films on Hg1−xCdxTe
J. Vac. Sci. Technol. A 14, 2325–2330 (1996)
https://doi.org/10.1116/1.580017
Numerical ellipsometry: Applications of a new algorithm for real‐time, in situ film growth monitoring
J. Vac. Sci. Technol. A 14, 2331–2336 (1996)
https://doi.org/10.1116/1.580018
Molecular beam sampling to analyze the reaction mechanism of chemical vapor deposition
J. Vac. Sci. Technol. A 14, 2337–2342 (1996)
https://doi.org/10.1116/1.580019
In situ wafer temperature monitoring of silicon etching using diffuse reflectance spectroscopy
J. Vac. Sci. Technol. A 14, 2356–2360 (1996)
https://doi.org/10.1116/1.580022
Relative sensitivity factors of B related to SiGe alloy composition on secondary ion mass spectrometry with an oxygen primary ion beam
J. Vac. Sci. Technol. A 14, 2361–2365 (1996)
https://doi.org/10.1116/1.580023
Surface chemical reaction between polycarbonate and kilo‐electron‐volt energy Ar+ ion in oxygen environment
J. Vac. Sci. Technol. A 14, 2366–2371 (1996)
https://doi.org/10.1116/1.580024
Interaction of water with clean and gallium precovered Fe(111) surfaces
J. Vac. Sci. Technol. A 14, 2372–2377 (1996)
https://doi.org/10.1116/1.580025
Microtribological studies of unlubricated and lubricated surfaces using atomic force/friction force microscopy
J. Vac. Sci. Technol. A 14, 2378–2391 (1996)
https://doi.org/10.1116/1.580026
Comparison of submicron particle analysis by Auger electron spectroscopy, time‐of‐flight secondary ion mass spectrometry, and secondary electron microscopy with energy dispersive x‐ray spectroscopy
Kenton D. Childs; David Narum; Lori A. LaVanier; Patricia M. Lindley; Bruno W. Schueler; George Mulholland; Alain C. Diebold
J. Vac. Sci. Technol. A 14, 2392–2404 (1996)
https://doi.org/10.1116/1.580027
Recoil spectrometry of thin film reactions in the Pd/InP system
Leif Persson; Mohamed El Bouanani; Mikael Hult; Patrik Jönsson; Harry J. Whitlow; Margaretha Andersson; Kristina Georgsson; Ian F. Bubb; Peter N. Johnston; Scott R. Walker; David D. Cohen; Nick Dytlewski; Carina Zaring; Mikael Östling
J. Vac. Sci. Technol. A 14, 2405–2413 (1996)
https://doi.org/10.1116/1.580028
Focusing glass capillary array molecular beam inlet for a high sensitivity mass spectrometer system
J. Vac. Sci. Technol. A 14, 2414–2417 (1996)
https://doi.org/10.1116/1.580029
Physical properties of diamondlike carbon films deposited in mixed atmospheres of C2H4–Ar, C2H4–H2, and C2H4–N2
Masatoshi Nakayama; Yasuhiro Matsuba; Junichi Shimamura; Yasuyuki Yamamoto; Hiroshi Chihara; Hideo Kato; Kazunori Maruyama; Kiichiro Kamata
J. Vac. Sci. Technol. A 14, 2418–2426 (1996)
https://doi.org/10.1116/1.580030
Conductance and leakage in superconducting tunnel junctions
J. Vac. Sci. Technol. A 14, 2427–2432 (1996)
https://doi.org/10.1116/1.580031
Schottky barrier at the Au/Gap (110) interface
J. Vac. Sci. Technol. A 14, 2433–2436 (1996)
https://doi.org/10.1116/1.580032
Characterization of as‐grown and annealed thin SiO2 films formed in 0.1 M HCl
J. Vac. Sci. Technol. A 14, 2437–2442 (1996)
https://doi.org/10.1116/1.580033
Solid phase epitaxy with x‐ray irradiation using a compact synchrotron radiation source AURORA
J. Vac. Sci. Technol. A 14, 2443–2447 (1996)
https://doi.org/10.1116/1.580034
Electronic states of a clean Si(110) 16×2 surface studied by angle resolved photoemission and surface differential reflectivity
J. Vac. Sci. Technol. A 14, 2448–2453 (1996)
https://doi.org/10.1116/1.580035
Effect of a surface layer on the stress relaxation of thin films
J. Vac. Sci. Technol. A 14, 2454–2461 (1996)
https://doi.org/10.1116/1.580036
Residual macroscopic stress in highly preferentially oriented titanium nitride coatings deposited on various steel types
J. Vac. Sci. Technol. A 14, 2462–2469 (1996)
https://doi.org/10.1116/1.580037
Changes in refractive index and in chemical state of synchrotron radiation irradiated fluorinated polyimide films
Yasuko Yamada Maruo; Shigekuni Sasaki; Tsuneyuki Haga; Hiroo Kinoshita; Toshiyuki Horiuchi; Toshiaki Tamamura
J. Vac. Sci. Technol. A 14, 2470–2474 (1996)
https://doi.org/10.1116/1.580003
Photoelectron spectroscopy during pulsed laser melting of surfaces
J. Vac. Sci. Technol. A 14, 2475–2479 (1996)
https://doi.org/10.1116/1.580004
Photoluminescence measurements in the phase transition region for CdS thin films
J. Vac. Sci. Technol. A 14, 2480–2482 (1996)
https://doi.org/10.1116/1.580005
Measurement of the elastic stress of thin films deposited on gallium arsenide
J. Vac. Sci. Technol. A 14, 2483–2487 (1996)
https://doi.org/10.1116/1.580006
Characterization of silicon oxynitride thin films by infrared reflection absorption spectroscopy
J. Vac. Sci. Technol. A 14, 2488–2492 (1996)
https://doi.org/10.1116/1.580007
Effects of Y or Gd addition on the structures and resistivities of Al thin films
J. Vac. Sci. Technol. A 14, 2499–2504 (1996)
https://doi.org/10.1116/1.580009
Formation of chromium oxide on 316L austenitic stainless steel
J. Vac. Sci. Technol. A 14, 2505–2510 (1996)
https://doi.org/10.1116/1.580010
Characteristics of Cu thin films on a glass substrate by partially ionized beam deposition at room temperature
J. Vac. Sci. Technol. A 14, 2517–2521 (1996)
https://doi.org/10.1116/1.580012
High temperature oxidation of thin CrN coatings deposited on steel
J. Vac. Sci. Technol. A 14, 2527–2534 (1996)
https://doi.org/10.1116/1.580014
Growth dynamics and surface fine structure of ZnO ultrafine particle films
J. Vac. Sci. Technol. A 14, 2547–2550 (1996)
https://doi.org/10.1116/1.579979
Direct observation of β‐TaH phase precipitation in tantalum–hydrogen solid solution
J. Vac. Sci. Technol. A 14, 2551–2553 (1996)
https://doi.org/10.1116/1.579980
Growth of ultrathin crystalline Al2O3 films on Ru(0001) and Re(0001) surfaces
J. Vac. Sci. Technol. A 14, 2554–2563 (1996)
https://doi.org/10.1116/1.579981
Whiskers grown on aluminum thin films during heat treatments
J. Vac. Sci. Technol. A 14, 2570–2576 (1996)
https://doi.org/10.1116/1.579983
Measurements of the tangential momentum accommodation coefficient in the transition flow regime with a spinning rotor gauge
J. Vac. Sci. Technol. A 14, 2592–2598 (1996)
https://doi.org/10.1116/1.579986
Synchrotron radiation induced gas desorption from a Prototype Large Hadron Collider beam screen at cryogenic temperatures
J. Vac. Sci. Technol. A 14, 2618–2623 (1996)
https://doi.org/10.1116/1.579989
Vacuum chamber for the wiggler of the Taiwan Light Source at the Synchrotron Radiation Research Center
J. Vac. Sci. Technol. A 14, 2624–2626 (1996)
https://doi.org/10.1116/1.579990
Outgassing rate characteristic of a stainless‐steel extreme high vacuum system
J. Vac. Sci. Technol. A 14, 2636–2640 (1996)
https://doi.org/10.1116/1.579992
Outgassing from aluminum surface layer induced by synchrotron radiation
J. Vac. Sci. Technol. A 14, 2641–2644 (1996)
https://doi.org/10.1116/1.579993
Secondary ion mass spectroscopy resolution with ultra‐low beam energies
J. Vac. Sci. Technol. A 14, 2645–2650 (1996)
https://doi.org/10.1116/1.579994
Preparation of crystalline beta barium borate (β‐BaB2O4) thin films by opposed‐targets magnetron sputtering
J. Vac. Sci. Technol. A 14, 2651–2654 (1996)
https://doi.org/10.1116/1.579995
Compact electron cyclotron resonance plasma source for molecular beam epitaxy applications
J. Vac. Sci. Technol. A 14, 2655–2658 (1996)
https://doi.org/10.1116/1.579996
IBM‐personal computer data acquisition and processing system to upgrade an out‐of‐date mass spectrometer
R. López Callejas; M. J. Pozas Cárdenas; G. Cruz Cruz; L. Meléndez Lugo; E. Chávez Alarcón; R. Valencia Alvarado; M. G. Olayo González; A. Flores Orta
J. Vac. Sci. Technol. A 14, 2659–2661 (1996)
https://doi.org/10.1116/1.579997
Temperature dependence of a‐C:H film deposition in a CH4 radio frequency plasma
J. Vac. Sci. Technol. A 14, 2666–2668 (1996)
https://doi.org/10.1116/1.579999
Hollow‐cathode assisted sputtering
J. Vac. Sci. Technol. A 14, 2674–2676 (1996)
https://doi.org/10.1116/1.580002
Machine-learning-enabled on-the-fly analysis of RHEED patterns during thin film deposition by molecular beam epitaxy
Tiffany C. Kaspar, Sarah Akers, et al.
Recent trends in thermal atomic layer deposition chemistry
Georgi Popov, Miika Mattinen, et al.
Low-resistivity molybdenum obtained by atomic layer deposition
Kees van der Zouw, Bernhard Y. van der Wel, et al.