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Formation of polytetrafluoroethylene thin films by using CO2 laser evaporation and XeCl laser ablation
J. Vac. Sci. Technol. A 14, 1981–1985 (1996)
https://doi.org/10.1116/1.580071
Synthesis and deposition of silicon nitride films by laser reactive ablation of silicon in low pressure ammonia: A parametric study
I. N. Mihãilescu; Adriana Litã; V. S. Teodorescu; Eniko Gyorgy; Rodica Alexandrescu; A. Luches; M. Martino; A. Barboricã
J. Vac. Sci. Technol. A 14, 1986–1994 (1996)
https://doi.org/10.1116/1.580072
YBa2Cu3O7−x thin film over 3 in. substrate using off‐axis excimer laser deposition
J. Vac. Sci. Technol. A 14, 1995–1998 (1996)
https://doi.org/10.1116/1.580073
Behavior of Si atoms in a silane electron cyclotron resonance plasma at high dissociations
J. Vac. Sci. Technol. A 14, 1999–2003 (1996)
https://doi.org/10.1116/1.580074
Relating electric field distribution of an electron cyclotron resonance cavity to dry etching characteristics
J. Vac. Sci. Technol. A 14, 2020–2025 (1996)
https://doi.org/10.1116/1.580077
Ion desorption stability in superconducting high energy physics proton colliders
J. Vac. Sci. Technol. A 14, 2026–2038 (1996)
https://doi.org/10.1116/1.580078
Diamond‐like carbon film synthesized by ion beam assisted deposition and its tribological properties
J. Vac. Sci. Technol. A 14, 2039–2047 (1996)
https://doi.org/10.1116/1.580079
Reactive ion beam assisted deposition of zirconium oxyfluoride thin films
J. Vac. Sci. Technol. A 14, 2056–2061 (1996)
https://doi.org/10.1116/1.580081
Study of surface reactions during plasma enhanced chemical vapor deposition of SiO2 from SiH4, O2, and Ar plasma
J. Vac. Sci. Technol. A 14, 2062–2070 (1996)
https://doi.org/10.1116/1.580082
Reactor modeling for radio frequency plasma deposition of SiNxHy: Comparison between two reactor designs
J. Vac. Sci. Technol. A 14, 2071–2082 (1996)
https://doi.org/10.1116/1.580083
CFX radical generation by plasma interaction with fluorocarbon films on the reactor wall
J. Vac. Sci. Technol. A 14, 2083–2087 (1996)
https://doi.org/10.1116/1.580084
SiOxNy films deposited by remote plasma enhanced chemical vapor deposition using SiCl4
J. Vac. Sci. Technol. A 14, 2088–2093 (1996)
https://doi.org/10.1116/1.580085
Electron‐beam controlled radio frequency discharges for plasma processing
J. Vac. Sci. Technol. A 14, 2094–2101 (1996)
https://doi.org/10.1116/1.580086
Vacuum ultraviolet emission from radio frequency plasmas of SF6 and CF4
J. Vac. Sci. Technol. A 14, 2102–2105 (1996)
https://doi.org/10.1116/1.580087
Spatial distributions of electron density and electron temperature in direct current glow discharge
J. Vac. Sci. Technol. A 14, 2113–2121 (1996)
https://doi.org/10.1116/1.580089
Fluorocarbon high density plasmas. VII. Investigation of selective SiO2‐to‐Si3N4 high density plasma etch processes
J. Vac. Sci. Technol. A 14, 2127–2137 (1996)
https://doi.org/10.1116/1.580091
Ion‐assisted Si/XeF2‐etching: Influence of ion/neutral flux ratio and ion energy
J. Vac. Sci. Technol. A 14, 2138–2150 (1996)
https://doi.org/10.1116/1.580038
Role of nitrogen in the downstream etching of silicon nitride
J. Vac. Sci. Technol. A 14, 2151–2157 (1996)
https://doi.org/10.1116/1.580039
Characterization of helicon wave plasma designed for direct current sputtering
J. Vac. Sci. Technol. A 14, 2163–2168 (1996)
https://doi.org/10.1116/1.580041
Electrostatic scattering of ionic species in low pressure sputtering of Ti and TiN
J. Vac. Sci. Technol. A 14, 2175–2181 (1996)
https://doi.org/10.1116/1.580043
Discharge characteristics of a facing target sputtering device using unbalanced magnetrons
J. Vac. Sci. Technol. A 14, 2182–2186 (1996)
https://doi.org/10.1116/1.580044
High‐rate magnetron sputtering
J. Vac. Sci. Technol. A 14, 2187–2191 (1996)
https://doi.org/10.1116/1.580045
Oxidation‐enhanced roughening of thin Co films during sputtering by O+2 ions
J. Vac. Sci. Technol. A 14, 2192–2201 (1996)
https://doi.org/10.1116/1.580046
Microstructure of radio frequency sputtered Ag1−xSix alloys
J. Vac. Sci. Technol. A 14, 2202–2206 (1996)
https://doi.org/10.1116/1.580047
Reactive sputter‐deposition and characterization of lead oxide films
J. Vac. Sci. Technol. A 14, 2207–2214 (1996)
https://doi.org/10.1116/1.580048
Characteristics of reactively sputtered Pt–SnO2 thin films for CO gas sensors
J. Vac. Sci. Technol. A 14, 2215–2219 (1996)
https://doi.org/10.1116/1.580049
Postdeposition annealing of radio frequency magnetron sputtered ZnO films
J. Vac. Sci. Technol. A 14, 2220–2230 (1996)
https://doi.org/10.1116/1.580050
Computational modeling of reactive gas modulation in radio frequency reactive sputtering
J. Vac. Sci. Technol. A 14, 2231–2234 (1996)
https://doi.org/10.1116/1.580051
Compact‐heating stage for use in sputtering in active oxygen gas environments
J. Vac. Sci. Technol. A 14, 2235–2237 (1996)
https://doi.org/10.1116/1.580052
Low‐temperature growth of aluminum nitride thin films on silicon by reactive radio frequency magnetron sputtering*
J. Vac. Sci. Technol. A 14, 2238–2242 (1996)
https://doi.org/10.1116/1.580053
Physical properties and chemical states of rf sputter deposited SiWOx films
J. Vac. Sci. Technol. A 14, 2243–2246 (1996)
https://doi.org/10.1116/1.580054
Formation of high temperature phases in sputter deposited Ti‐based films below 100 °C
J. Vac. Sci. Technol. A 14, 2247–2250 (1996)
https://doi.org/10.1116/1.580055
Cu (In,Ga)Se2 thin films and solar cells prepared by selenization of metallic precursors
Bülent M. Başol; Vijay K. Kapur; Arvind Halani; Craig R. Leidholm; Jon Sharp; James R. Sites; Amy Swartzlander; Richard Matson; Harin Ullal
J. Vac. Sci. Technol. A 14, 2251–2256 (1996)
https://doi.org/10.1116/1.580056
Analysis of aluminum nitride epitaxial growth by low pressure metal organic chemical vapor deposition
J. Vac. Sci. Technol. A 14, 2257–2262 (1996)
https://doi.org/10.1116/1.580057
Investigation of deep levels in ZnSe:Cl films grown by molecular beam epitaxy
J. Vac. Sci. Technol. A 14, 2269–2274 (1996)
https://doi.org/10.1116/1.580059
Surface‐extended x‐ray absorption fine structure study of silicon deposited onto GaAs(110)
J. Vac. Sci. Technol. A 14, 2275–2281 (1996)
https://doi.org/10.1116/1.580060
Adsorption controlled Si(1−x)Gex growth during chemical vapor deposition
J. Vac. Sci. Technol. A 14, 2282–2288 (1996)
https://doi.org/10.1116/1.580061
Cleaning thin‐film diamond surfaces for device fabrication: An Auger electron spectroscopic study
J. Vac. Sci. Technol. A 14, 2303–2307 (1996)
https://doi.org/10.1116/1.580063
Isothermal hydrogen desorption from the diamond (100)2×1 surface
J. Vac. Sci. Technol. A 14, 2308–2314 (1996)
https://doi.org/10.1116/1.580064
Time‐resolved mass spectrometry in rough vacuum environment
J. Vac. Sci. Technol. A 14, 2315–2324 (1996)
https://doi.org/10.1116/1.580065
Thermal stability of photochemical native oxide films on Hg1−xCdxTe
J. Vac. Sci. Technol. A 14, 2325–2330 (1996)
https://doi.org/10.1116/1.580017
Numerical ellipsometry: Applications of a new algorithm for real‐time, in situ film growth monitoring
J. Vac. Sci. Technol. A 14, 2331–2336 (1996)
https://doi.org/10.1116/1.580018
Molecular beam sampling to analyze the reaction mechanism of chemical vapor deposition
J. Vac. Sci. Technol. A 14, 2337–2342 (1996)
https://doi.org/10.1116/1.580019
In situ wafer temperature monitoring of silicon etching using diffuse reflectance spectroscopy
J. Vac. Sci. Technol. A 14, 2356–2360 (1996)
https://doi.org/10.1116/1.580022
Relative sensitivity factors of B related to SiGe alloy composition on secondary ion mass spectrometry with an oxygen primary ion beam
J. Vac. Sci. Technol. A 14, 2361–2365 (1996)
https://doi.org/10.1116/1.580023
Surface chemical reaction between polycarbonate and kilo‐electron‐volt energy Ar+ ion in oxygen environment
J. Vac. Sci. Technol. A 14, 2366–2371 (1996)
https://doi.org/10.1116/1.580024
Interaction of water with clean and gallium precovered Fe(111) surfaces
J. Vac. Sci. Technol. A 14, 2372–2377 (1996)
https://doi.org/10.1116/1.580025
Microtribological studies of unlubricated and lubricated surfaces using atomic force/friction force microscopy
J. Vac. Sci. Technol. A 14, 2378–2391 (1996)
https://doi.org/10.1116/1.580026
Comparison of submicron particle analysis by Auger electron spectroscopy, time‐of‐flight secondary ion mass spectrometry, and secondary electron microscopy with energy dispersive x‐ray spectroscopy
Kenton D. Childs; David Narum; Lori A. LaVanier; Patricia M. Lindley; Bruno W. Schueler; George Mulholland; Alain C. Diebold
J. Vac. Sci. Technol. A 14, 2392–2404 (1996)
https://doi.org/10.1116/1.580027
Recoil spectrometry of thin film reactions in the Pd/InP system
Leif Persson; Mohamed El Bouanani; Mikael Hult; Patrik Jönsson; Harry J. Whitlow; Margaretha Andersson; Kristina Georgsson; Ian F. Bubb; Peter N. Johnston; Scott R. Walker; David D. Cohen; Nick Dytlewski; Carina Zaring; Mikael Östling
J. Vac. Sci. Technol. A 14, 2405–2413 (1996)
https://doi.org/10.1116/1.580028
Focusing glass capillary array molecular beam inlet for a high sensitivity mass spectrometer system
J. Vac. Sci. Technol. A 14, 2414–2417 (1996)
https://doi.org/10.1116/1.580029
Physical properties of diamondlike carbon films deposited in mixed atmospheres of C2H4–Ar, C2H4–H2, and C2H4–N2
Masatoshi Nakayama; Yasuhiro Matsuba; Junichi Shimamura; Yasuyuki Yamamoto; Hiroshi Chihara; Hideo Kato; Kazunori Maruyama; Kiichiro Kamata
J. Vac. Sci. Technol. A 14, 2418–2426 (1996)
https://doi.org/10.1116/1.580030
Conductance and leakage in superconducting tunnel junctions
J. Vac. Sci. Technol. A 14, 2427–2432 (1996)
https://doi.org/10.1116/1.580031
Schottky barrier at the Au/Gap (110) interface
J. Vac. Sci. Technol. A 14, 2433–2436 (1996)
https://doi.org/10.1116/1.580032
Characterization of as‐grown and annealed thin SiO2 films formed in 0.1 M HCl
J. Vac. Sci. Technol. A 14, 2437–2442 (1996)
https://doi.org/10.1116/1.580033
Solid phase epitaxy with x‐ray irradiation using a compact synchrotron radiation source AURORA
J. Vac. Sci. Technol. A 14, 2443–2447 (1996)
https://doi.org/10.1116/1.580034
Electronic states of a clean Si(110) 16×2 surface studied by angle resolved photoemission and surface differential reflectivity
J. Vac. Sci. Technol. A 14, 2448–2453 (1996)
https://doi.org/10.1116/1.580035
Effect of a surface layer on the stress relaxation of thin films
J. Vac. Sci. Technol. A 14, 2454–2461 (1996)
https://doi.org/10.1116/1.580036
Residual macroscopic stress in highly preferentially oriented titanium nitride coatings deposited on various steel types
J. Vac. Sci. Technol. A 14, 2462–2469 (1996)
https://doi.org/10.1116/1.580037
Changes in refractive index and in chemical state of synchrotron radiation irradiated fluorinated polyimide films
Yasuko Yamada Maruo; Shigekuni Sasaki; Tsuneyuki Haga; Hiroo Kinoshita; Toshiyuki Horiuchi; Toshiaki Tamamura
J. Vac. Sci. Technol. A 14, 2470–2474 (1996)
https://doi.org/10.1116/1.580003
Photoelectron spectroscopy during pulsed laser melting of surfaces
J. Vac. Sci. Technol. A 14, 2475–2479 (1996)
https://doi.org/10.1116/1.580004
Photoluminescence measurements in the phase transition region for CdS thin films
J. Vac. Sci. Technol. A 14, 2480–2482 (1996)
https://doi.org/10.1116/1.580005
Measurement of the elastic stress of thin films deposited on gallium arsenide
J. Vac. Sci. Technol. A 14, 2483–2487 (1996)
https://doi.org/10.1116/1.580006
Characterization of silicon oxynitride thin films by infrared reflection absorption spectroscopy
J. Vac. Sci. Technol. A 14, 2488–2492 (1996)
https://doi.org/10.1116/1.580007
Strengthening of Al2O3‐based ceramics by metalorganic chemical vapor deposition
J. Vac. Sci. Technol. A 14, 2493–2498 (1996)
https://doi.org/10.1116/1.580008
Effects of Y or Gd addition on the structures and resistivities of Al thin films
J. Vac. Sci. Technol. A 14, 2499–2504 (1996)
https://doi.org/10.1116/1.580009
Formation of chromium oxide on 316L austenitic stainless steel
J. Vac. Sci. Technol. A 14, 2505–2510 (1996)
https://doi.org/10.1116/1.580010
Properties of radio frequency–sputtered alumina films on flat and grooved substrates
J. Vac. Sci. Technol. A 14, 2511–2516 (1996)
https://doi.org/10.1116/1.580011
Characteristics of Cu thin films on a glass substrate by partially ionized beam deposition at room temperature
J. Vac. Sci. Technol. A 14, 2517–2521 (1996)
https://doi.org/10.1116/1.580012
Effect of annealing on Ag films on Pt(111)
J. Vac. Sci. Technol. A 14, 2522–2526 (1996)
https://doi.org/10.1116/1.580013
High temperature oxidation of thin CrN coatings deposited on steel
J. Vac. Sci. Technol. A 14, 2527–2534 (1996)
https://doi.org/10.1116/1.580014
Growth dynamics and surface fine structure of ZnO ultrafine particle films
J. Vac. Sci. Technol. A 14, 2547–2550 (1996)
https://doi.org/10.1116/1.579979
Direct observation of β‐TaH phase precipitation in tantalum–hydrogen solid solution
J. Vac. Sci. Technol. A 14, 2551–2553 (1996)
https://doi.org/10.1116/1.579980
Growth of ultrathin crystalline Al2O3 films on Ru(0001) and Re(0001) surfaces
J. Vac. Sci. Technol. A 14, 2554–2563 (1996)
https://doi.org/10.1116/1.579981
Solid‐state reaction of Ti and Ni thin films with aluminum nitride
J. Vac. Sci. Technol. A 14, 2564–2569 (1996)
https://doi.org/10.1116/1.579982
Whiskers grown on aluminum thin films during heat treatments
J. Vac. Sci. Technol. A 14, 2570–2576 (1996)
https://doi.org/10.1116/1.579983
Granular superconductor contacts to two‐dimensional electron gases
J. Vac. Sci. Technol. A 14, 2577–2581 (1996)
https://doi.org/10.1116/1.579984
Measurements of the tangential momentum accommodation coefficient in the transition flow regime with a spinning rotor gauge
J. Vac. Sci. Technol. A 14, 2592–2598 (1996)
https://doi.org/10.1116/1.579986
Synchrotron radiation induced gas desorption from a Prototype Large Hadron Collider beam screen at cryogenic temperatures
J. Vac. Sci. Technol. A 14, 2618–2623 (1996)
https://doi.org/10.1116/1.579989
Vacuum chamber for the wiggler of the Taiwan Light Source at the Synchrotron Radiation Research Center
J. Vac. Sci. Technol. A 14, 2624–2626 (1996)
https://doi.org/10.1116/1.579990
Outgassing rate characteristic of a stainless‐steel extreme high vacuum system
J. Vac. Sci. Technol. A 14, 2636–2640 (1996)
https://doi.org/10.1116/1.579992
Outgassing from aluminum surface layer induced by synchrotron radiation
J. Vac. Sci. Technol. A 14, 2641–2644 (1996)
https://doi.org/10.1116/1.579993
Secondary ion mass spectroscopy resolution with ultra‐low beam energies
J. Vac. Sci. Technol. A 14, 2645–2650 (1996)
https://doi.org/10.1116/1.579994
Preparation of crystalline beta barium borate (β‐BaB2O4) thin films by opposed‐targets magnetron sputtering
J. Vac. Sci. Technol. A 14, 2651–2654 (1996)
https://doi.org/10.1116/1.579995
Compact electron cyclotron resonance plasma source for molecular beam epitaxy applications
J. Vac. Sci. Technol. A 14, 2655–2658 (1996)
https://doi.org/10.1116/1.579996
IBM‐personal computer data acquisition and processing system to upgrade an out‐of‐date mass spectrometer
R. López Callejas; M. J. Pozas Cárdenas; G. Cruz Cruz; L. Meléndez Lugo; E. Chávez Alarcón; R. Valencia Alvarado; M. G. Olayo González; A. Flores Orta
J. Vac. Sci. Technol. A 14, 2659–2661 (1996)
https://doi.org/10.1116/1.579997
Thermal stability of rapidly annealed CoSi2/n‐GaAs and CoSi2/p‐InP Schottky contacts
J. Vac. Sci. Technol. A 14, 2662–2665 (1996)
https://doi.org/10.1116/1.579998
Temperature dependence of a‐C:H film deposition in a CH4 radio frequency plasma
J. Vac. Sci. Technol. A 14, 2666–2668 (1996)
https://doi.org/10.1116/1.579999
Minimum profile ultrahigh vacuum gate valve based on linear/rotary motion feedthrough
J. Vac. Sci. Technol. A 14, 2669–2670 (1996)
https://doi.org/10.1116/1.580000
Hollow‐cathode assisted sputtering
J. Vac. Sci. Technol. A 14, 2674–2676 (1996)
https://doi.org/10.1116/1.580002
Cheap and stable titanium source for use in oxide molecular beam epitaxy systems
J. Vac. Sci. Technol. A 14, 2677–2679 (1996)
https://doi.org/10.1116/1.580185