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Surface‐immobilized plasma proteins and platelet activation in the non‐self‐ recognition of foreign materials

Håkan Nygren; Pentti Tengvall; Ingemar Lundström

J. Vac. Sci. Technol. A 14, 669–673 (1996) https://doi.org/10.1116/1.580369

View articletitled, Surface‐immobilized plasma proteins and platelet activation in the non‐self‐ recognition of foreign materials

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In situ high‐resolution atomic force microscope imaging of biological surfaces

I. Yu. Sokolov; M. Firtel; G. S. Henderson

J. Vac. Sci. Technol. A 14, 674–678 (1996) https://doi.org/10.1116/1.580370

Abstract

View articletitled, In situ high‐resolution atomic force microscope imaging of biological surfaces

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Non‐self‐recognition of metals in blood and peritoneal cavity

Sanjiv Kanagaraja; Lars E. Ericson; Håkan Nygren

J. Vac. Sci. Technol. A 14, 679–684 (1996) https://doi.org/10.1116/1.580371

Abstract

View articletitled, Non‐self‐recognition of metals in blood and peritoneal cavity

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Optical properties of cobalt oxide films deposited by spray pyrolysis

P. Ruzakowski Athey; F. K. Urban, III; M. F. Tabet; W. A. McGahan

J. Vac. Sci. Technol. A 14, 685–692 (1996) https://doi.org/10.1116/1.580372

Abstract

View articletitled, Optical properties of cobalt oxide films deposited by spray pyrolysis

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Determination of chemistry and microstructure in SiO_x (0.1<x<0.8) films by x‐ray photoelectron spectroscopy

Jeffrey R. Shallenberger

J. Vac. Sci. Technol. A 14, 693–698 (1996) https://doi.org/10.1116/1.580373

Abstract

View articletitled, Determination of chemistry and microstructure in SiOx (0.1<x<0.8) films by x‐ray photoelectron spectroscopy

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A study of Si compounds by Zr Lα photoelectron spectroscopy

A. R. Chourasia; S. J. Hood; D. R. Chopra

J. Vac. Sci. Technol. A 14, 699–703 (1996) https://doi.org/10.1116/1.580374

Abstract

View articletitled, A study of Si compounds by Zr Lα photoelectron spectroscopy

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Thin metal films deposited at low temperature for optoelectronic device application

L. He; Z. Q. Shi

J. Vac. Sci. Technol. A 14, 704–708 (1996) https://doi.org/10.1116/1.580375

Abstract

View articletitled, Thin metal films deposited at low temperature for optoelectronic device application

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Charge issues in high oxygen gas ratio tetraethylorthosilicate plasma enhanced chemical vapor deposition films

D. A. DeCrosta; J. J. Hackenberg

J. Vac. Sci. Technol. A 14, 709–713 (1996) https://doi.org/10.1116/1.580376

Abstract

View articletitled, Charge issues in high oxygen gas ratio tetraethylorthosilicate plasma enhanced chemical vapor deposition films

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Experimental and theoretical study of vibrations of a cantilevered beam using a ZnO piezoelectric sensor

B. R. Jooste; H. J. Viljoen; S. L. Rohde; N. F. J. van Rensburg

J. Vac. Sci. Technol. A 14, 714–719 (1996) https://doi.org/10.1116/1.580377

Abstract

View articletitled, Experimental and theoretical study of vibrations of a cantilevered beam using a ZnO piezoelectric sensor

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Reflective coatings for large‐area solar concentrators

P. M. Martin; J. D. Affinito; M. E. Gross; D. C. Stewart; W. D. Bennett; R. J. Kelley; W. E. Horne

J. Vac. Sci. Technol. A 14, 720–726 (1996) https://doi.org/10.1116/1.580378

Abstract

View articletitled, Reflective coatings for large‐area solar concentrators

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Scaleup of a nitrogen glow‐discharge process for silver–poly(ethylene terephthalate) adhesion

J. M. Grace; D. R. Freeman; R. Corts; W. Kosel

J. Vac. Sci. Technol. A 14, 727–732 (1996) https://doi.org/10.1116/1.580379

Abstract

View articletitled, Scaleup of a nitrogen glow‐discharge process for silver–poly(ethylene terephthalate) adhesion

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High rate vacuum deposition of polymer electrolytes

J. D. Affinito; M. E. Gross; C. A. Coronado; G. C. Dunham; P. M. Martin

J. Vac. Sci. Technol. A 14, 733–738 (1996) https://doi.org/10.1116/1.580380

Abstract

View articletitled, High rate vacuum deposition of polymer electrolytes

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Development of a multilayer thin‐film solar control windshield

J. J. Finley

J. Vac. Sci. Technol. A 14, 739–746 (1996) https://doi.org/10.1116/1.580381

Abstract

View articletitled, Development of a multilayer thin‐film solar control windshield

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Reactive‐sputter deposition and structure of RuO₂ films on sapphire and strontium titanate

Q. Wang; Wayne L. Gladfelter; D. Fennell Evans; Yue Fan; Alfonso Franciosi

J. Vac. Sci. Technol. A 14, 747–752 (1996) https://doi.org/10.1116/1.580382

Abstract

View articletitled, Reactive‐sputter deposition and structure of RuO2 films on sapphire and strontium titanate

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Response characteristics of lead phthalocyanine gas sensor: Effect of operating temperature and postdeposition annealing

C. J. Liu; J. C. Hsieh; Y. H. Ju

J. Vac. Sci. Technol. A 14, 753–756 (1996) https://doi.org/10.1116/1.580383

Abstract

View articletitled, Response characteristics of lead phthalocyanine gas sensor: Effect of operating temperature and postdeposition annealing

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Estimation and verification of the optical properties of indium tin oxide based on the energy band diagram

S. A. Knickerbocker; A. K. Kulkarni

J. Vac. Sci. Technol. A 14, 757–761 (1996) https://doi.org/10.1116/1.580384

Abstract

View articletitled, Estimation and verification of the optical properties of indium tin oxide based on the energy band diagram

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Temperature‐dependent Raman scattering in PT and PMN‐PT thin films

E. Ching‐Prado; J. Cordero; R. S. Katiyar; A. S. Bhalla

J. Vac. Sci. Technol. A 14, 762–767 (1996) https://doi.org/10.1116/1.580385

Abstract

View articletitled, Temperature‐dependent Raman scattering in PT and PMN‐PT thin films

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Formation of an in situ diffusion barrier while diffusing aluminum through boron‐enriched nickel

D. J. Peterman

J. Vac. Sci. Technol. A 14, 768–771 (1996) https://doi.org/10.1116/1.580386

Abstract

View articletitled, Formation of an in situ diffusion barrier while diffusing aluminum through boron‐enriched nickel

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Phase development in sputter deposited titanium dioxide

M. D. Wiggins; M. C. Nelson; C. R. Aita

J. Vac. Sci. Technol. A 14, 772–776 (1996) https://doi.org/10.1116/1.580387

Abstract

View articletitled, Phase development in sputter deposited titanium dioxide

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Nitrogen‐ion irradiation during the deposition of C_1−xN_x thin films by ion beam sputtering technique

Satoshi Kobayashi; Keiko Miyazaki; Shinji Nozaki; Hiroshi Morisaki; Shigeo Fukui; Susumu Masaki

J. Vac. Sci. Technol. A 14, 777–780 (1996) https://doi.org/10.1116/1.580388

Abstract

View articletitled, Nitrogen‐ion irradiation during the deposition of C1−xNx thin films by ion beam sputtering technique

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Surface processing by gas cluster ion beams at the atomic (molecular) level

I. Yamada; J. Matsuo; Z. Insepov; D. Takeuchi; M. Akizuki; N. Toyoda

J. Vac. Sci. Technol. A 14, 781–785 (1996) https://doi.org/10.1116/1.580389

Abstract

View articletitled, Surface processing by gas cluster ion beams at the atomic (molecular) level

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Numerical ellipsometry: Real‐time solutions using mapping onto the complex index plane

D. Barton; J. C. Comfort; F. K. Urban, III

J. Vac. Sci. Technol. A 14, 786–790 (1996) https://doi.org/10.1116/1.580390

Abstract

View articletitled, Numerical ellipsometry: Real‐time solutions using mapping onto the complex index plane

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High transmittance–low resistivity ZnO:Ga films by laser ablation

G. A. Hirata; J. McKittrick; J. Siqueiros; O. A. Lopez; T. Cheeks; O. Contreras; J. Y. Yi

J. Vac. Sci. Technol. A 14, 791–794 (1996) https://doi.org/10.1116/1.580391

Abstract

View articletitled, High transmittance–low resistivity ZnO:Ga films by laser ablation

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Zirconium silicate thin films for antireflection coatings

J. D. Barrie; E. L. Fletcher, II

J. Vac. Sci. Technol. A 14, 795–799 (1996) https://doi.org/10.1116/1.580392

Abstract

View articletitled, Zirconium silicate thin films for antireflection coatings

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Sputter deposited piezoelectric fiber coatings for acousto‐optic modulators

G. R. Fox; C. A. P. Muller; N. Setter; N. H. Ky; H. G. Limberger

J. Vac. Sci. Technol. A 14, 800–805 (1996) https://doi.org/10.1116/1.580393

Abstract

View articletitled, Sputter deposited piezoelectric fiber coatings for acousto‐optic modulators

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Development of Cu‐doped ZnTe as a back‐contact interface layer for thin‐film CdS/CdTe solar cells

T. A. Gessert; A. R. Mason; P. Sheldon; A. B. Swartzlander; D. Niles; T. J. Coutts

J. Vac. Sci. Technol. A 14, 806–812 (1996) https://doi.org/10.1116/1.580394

Abstract

View articletitled, Development of Cu‐doped ZnTe as a back‐contact interface layer for thin‐film CdS/CdTe solar cells

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Elemental steps in the growth of AlN thin films on NiAl upon thermal decomposition of ammonia

P. Gassmann; G. Schmitz; J. Boysen; F. Bartolucci; R. Franchy

J. Vac. Sci. Technol. A 14, 813–818 (1996) https://doi.org/10.1116/1.580395

Abstract

View articletitled, Elemental steps in the growth of AlN thin films on NiAl upon thermal decomposition of ammonia

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Electronic structure of cubic gallium nitride films grown on GaAs

S. A. Ding; G. Neuhold; J. H. Weaver; P. Häberle; K. Horn; O. Brandt; H. Yang; K. Ploog

J. Vac. Sci. Technol. A 14, 819–824 (1996) https://doi.org/10.1116/1.580396

Abstract

View articletitled, Electronic structure of cubic gallium nitride films grown on GaAs

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Supersonic‐jet‐assisted growth of GaN and GaAs films

B. A. Ferguson; A. Sellidj; B. B. Doris; C. B. Mullins

J. Vac. Sci. Technol. A 14, 825–830 (1996) https://doi.org/10.1116/1.580397

Abstract

View articletitled, Supersonic‐jet‐assisted growth of GaN and GaAs films

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Unintentional hydrogenation of GaN and related alloys during processing

S. J. Pearton; C. R. Abernathy; C. B. Vartuli; J. W. Lee; J. D. MacKenzie; R. G. Wilson; R. J. Shul; F. Ren; J. M. Zavada

J. Vac. Sci. Technol. A 14, 831–835 (1996) https://doi.org/10.1116/1.580398

Abstract

View articletitled, Unintentional hydrogenation of GaN and related alloys during processing

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Patterning of AlN, InN, and GaN in KOH‐based solutions

J. R. Mileham; S. J. Pearton; C. R. Abernathy; J. D. MacKenzie; R. J. Shul; S. P. Kilcoyne

J. Vac. Sci. Technol. A 14, 836–839 (1996) https://doi.org/10.1116/1.580399

Abstract

View articletitled, Patterning of AlN, InN, and GaN in KOH‐based solutions

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Optical properties of GaN film grown by metalorganic chemical vapor deposition

R. Zhang; K. Yang; L. H. Qin; B. Shen; H. T. Shi; Y. Shi; S. L. Gu; Y. D. Zheng; Z. C. Huang; J. C. Chen

J. Vac. Sci. Technol. A 14, 840–843 (1996) https://doi.org/10.1116/1.580400

Abstract

View articletitled, Optical properties of GaN film grown by metalorganic chemical vapor deposition

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Zinc sulfide on GaP(110): Characterization of epitaxial growth and electronic structure

D. Wolfframm; P. Bailey; D. A. Evans; G. Neuhold; K. Horn

J. Vac. Sci. Technol. A 14, 844–848 (1996) https://doi.org/10.1116/1.580401

Abstract

View articletitled, Zinc sulfide on GaP(110): Characterization of epitaxial growth and electronic structure

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Different growth modes in GaAs(110) homoepitaxy

D. M. Holmes; J. G. Belk; J. L. Sudijono; J. H. Neave; T. S. Jones; B. A. Joyce

J. Vac. Sci. Technol. A 14, 849–853 (1996) https://doi.org/10.1116/1.580402

Abstract

View articletitled, Different growth modes in GaAs(110) homoepitaxy

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Atomic scale flattening and hydrogen termination of the Si(001) surface by wet‐chemical treatment

Yukinori Morita; Hiroshi Tokumoto

J. Vac. Sci. Technol. A 14, 854–858 (1996) https://doi.org/10.1116/1.580403

Abstract

View articletitled, Atomic scale flattening and hydrogen termination of the Si(001) surface by wet‐chemical treatment

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Study of buried interfaces by soft x‐ray fluorescence spectroscopy excited by synchrotron radiation

D. L. Ederer; J. A. Carlisle; J. Jimenez; J. J. Jia; K. Osborn; T. A. Callcott; R. C. C. Perera; J. H. Underwood; L. J. Terminello; A. Asfaw; F. J. Himpsel

J. Vac. Sci. Technol. A 14, 859–866 (1996) https://doi.org/10.1116/1.580404

Abstract

View articletitled, Study of buried interfaces by soft x‐ray fluorescence spectroscopy excited by synchrotron radiation

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Internal photoinjection and deep level luminescence at ZnSe/GaAs heterointerfaces

X. Yang; L. J. Brillson; A. D. Raisanen; L. Vanzetti; A. Bonanni; A. Franciosi

J. Vac. Sci. Technol. A 14, 867–871 (1996) https://doi.org/10.1116/1.580405

Abstract

View articletitled, Internal photoinjection and deep level luminescence at ZnSe/GaAs heterointerfaces

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Tetraethylorthosilicate reaction rates on SiO₂ at 1000 K: Zero‐order dependence on hydroxyl coverage and implications for reactions with three‐membered siloxane rings

Michael E. Bartram; Harry K. Moffat

J. Vac. Sci. Technol. A 14, 872–878 (1996) https://doi.org/10.1116/1.580406

Abstract

View articletitled, Tetraethylorthosilicate reaction rates on SiO2 at 1000 K: Zero‐order dependence on hydroxyl coverage and implications for reactions with three‐membered siloxane rings

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Hydrogen adsorption on GaAs (001) surfaces observed by surface photoabsorption and reflectance difference spectroscopy

Kunihiko Uwai; Naoki Kobayashi

J. Vac. Sci. Technol. A 14, 879–884 (1996) https://doi.org/10.1116/1.580407

Abstract

View articletitled, Hydrogen adsorption on GaAs (001) surfaces observed by surface photoabsorption and reflectance difference spectroscopy

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Evolution of GaSb epitaxy on GaAs(001)‐c(4×4)

P. M. Thibado; B. R. Bennett; M. E. Twigg; B. V. Shanabrook; L. J. Whitman

J. Vac. Sci. Technol. A 14, 885–889 (1996) https://doi.org/10.1116/1.580408

Abstract

View articletitled, Evolution of GaSb epitaxy on GaAs(001)‐c(4×4)

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Influence of transition metal impurities on oxygen precipitation in Czochralski‐grown silicon

B. Shen; R. Zhang; Y. Shi; Y. D. Zheng; T. Sekiguchi; K. Sumino

J. Vac. Sci. Technol. A 14, 890–895 (1996) https://doi.org/10.1116/1.580409

Abstract

View articletitled, Influence of transition metal impurities on oxygen precipitation in Czochralski‐grown silicon

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Molecular beam epitaxy growth and characterization of GaN and Al_xGa_1−xN on 6H‐SiC

S. Sinharoy; G. Augustine; L. B. Rowland; A. K. Agarwal; R. L. Messham; M. C. Driver; R. H. Hopkins

J. Vac. Sci. Technol. A 14, 896–899 (1996) https://doi.org/10.1116/1.580410

Abstract

View articletitled, Molecular beam epitaxy growth and characterization of GaN and AlxGa1−xN on 6H‐SiC

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Electrical characterization of Pt/SrBi₂Ta₂O₉/Pt capacitors fabricated by the pulsed laser ablated deposition technique

Jeon‐Kook Lee; Hyung‐Jin Jung; O. Auciello; A. I. Kingon

J. Vac. Sci. Technol. A 14, 900–904 (1996) https://doi.org/10.1116/1.580411

Abstract

View articletitled, Electrical characterization of Pt/SrBi2Ta2O9/Pt capacitors fabricated by the pulsed laser ablated deposition technique

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Solid phase epitaxy of β‐FeSi₂ on Si(100)

H. Chen; P. Han; X. D. Huang; Y. D. Zheng

J. Vac. Sci. Technol. A 14, 905–907 (1996) https://doi.org/10.1116/1.580412

Abstract

View articletitled, Solid phase epitaxy of β‐FeSi2 on Si(100)

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Low temperature growth of AlN(0001) on Al(111) using hydrazoic acid (HN₃)

John N. Russell, Jr.; Victor M. Bermudez; Andrés Leming

J. Vac. Sci. Technol. A 14, 908–912 (1996) https://doi.org/10.1116/1.580413

Abstract

View articletitled, Low temperature growth of AlN(0001) on Al(111) using hydrazoic acid (HN3)

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Silicon‐based group IV heterostructures for optoelectronic applications

Richard A. Soref

J. Vac. Sci. Technol. A 14, 913–918 (1996) https://doi.org/10.1116/1.580414

Abstract

View articletitled, Silicon‐based group IV heterostructures for optoelectronic applications

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Deposition mechanism and electrical properties of low pressure chemically vapor deposited W as a gate electrode

Kijoon Kim; J. H. Sone; S.‐O. Kim; J. S. Park; Hyeong Joon Kim

J. Vac. Sci. Technol. A 14, 919–923 (1996) https://doi.org/10.1116/1.580415

Abstract

View articletitled, Deposition mechanism and electrical properties of low pressure chemically vapor deposited W as a gate electrode

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Growth of (111)B‐oriented resonant tunneling devices in a gas source molecular beam epitaxy system

L. Cong; J. D. Albrecht; D. Cohen; P. P. Ruden; M. I. Nathan

J. Vac. Sci. Technol. A 14, 924–927 (1996) https://doi.org/10.1116/1.580416

Abstract

View articletitled, Growth of (111)B‐oriented resonant tunneling devices in a gas source molecular beam epitaxy system

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Optimization of selective TiSi₂ chemical vapor deposition by mechanistic chemical kinetics

R. P. Southwell; M. A. Mendicino; E. G. Seebauer

J. Vac. Sci. Technol. A 14, 928–934 (1996) https://doi.org/10.1116/1.580417

Abstract

View articletitled, Optimization of selective TiSi2 chemical vapor deposition by mechanistic chemical kinetics

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Reordering at the gas‐phase polysulfide passivated GaAs(110) surface

B. K. L. So; R. W. M. Kwok; G. Jin; G. Y. Cao; G. K. C. Hui; L. Huang; W. M. Lau; S. P. Wong

J. Vac. Sci. Technol. A 14, 935–940 (1996) https://doi.org/10.1116/1.580418

Abstract

View articletitled, Reordering at the gas‐phase polysulfide passivated GaAs(110) surface

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Reduction of gap states of ternary III–V semiconductor surfaces by sulfur passivation: Comparative studies of AlGaAs and InGaP

J. M. Seo; Y.‐K. Kim; H. G. Lee; Y.‐S. Chung; S. Kim

J. Vac. Sci. Technol. A 14, 941–945 (1996) https://doi.org/10.1116/1.580419

Abstract

View articletitled, Reduction of gap states of ternary III–V semiconductor surfaces by sulfur passivation: Comparative studies of AlGaAs and InGaP

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Simple equipment tolerant reflectometry for monitoring of molecular beam epitaxy and metalorganic chemical vapor deposition growth

J. C. Bean; L. J. Peticolas; R. Lum; M. L. McDonald

J. Vac. Sci. Technol. A 14, 946–951 (1996) https://doi.org/10.1116/1.580420

Abstract

View articletitled, Simple equipment tolerant reflectometry for monitoring of molecular beam epitaxy and metalorganic chemical vapor deposition growth

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The chemical composition of diamond plasmas

H. Zhu; S. F. Webb; Rik Blumenthal

J. Vac. Sci. Technol. A 14, 952–959 (1996) https://doi.org/10.1116/1.580421

Abstract

View articletitled, The chemical composition of diamond plasmas

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Optical approaches to determine near‐surface compositions during epitaxy

D. E. Aspnes

J. Vac. Sci. Technol. A 14, 960–966 (1996) https://doi.org/10.1116/1.580422

Abstract

View articletitled, Optical approaches to determine near‐surface compositions during epitaxy

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Lightly nitrided N₂O/O₂ gate oxidation process for submicron complementary metal–oxide semiconductor technology

P. K. Roy; Y. Ma; M. Weinhoffer

J. Vac. Sci. Technol. A 14, 967–970 (1996) https://doi.org/10.1116/1.580423

Abstract

View articletitled, Lightly nitrided N2O/O2 gate oxidation process for submicron complementary metal–oxide semiconductor technology

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High‐precision x‐ray reflectivity study of ultrathin SiO₂ on Si

N. Awaji; Y. Sugita; T. Nakanishi; S. Ohkubo; K. Takasaki; S. Komiya

J. Vac. Sci. Technol. A 14, 971–976 (1996) https://doi.org/10.1116/1.580424

Abstract

View articletitled, High‐precision x‐ray reflectivity study of ultrathin SiO2 on Si

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Feature scale simulation studies of TEOS‐sourced remote microwave plasma‐enhanced chemical vapor deposition of silicon dioxide: Role of oxygen atom recombination

Moneth Virmani; Dimitri A. Levedakis; Gregory B. Raupp; Timothy S. Cale

J. Vac. Sci. Technol. A 14, 977–983 (1996) https://doi.org/10.1116/1.580066

Abstract

View articletitled, Feature scale simulation studies of TEOS‐sourced remote microwave plasma‐enhanced chemical vapor deposition of silicon dioxide: Role of oxygen atom recombination

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Experiments and modeling of a helicon source

A. W. Molvik; T. D. Rognlien; J. A. Byers; R. H. Cohen; A. R. Ellingboe; E. B. Hooper; H. S. McLean; B. W. Stallard; P. A. Vitello

J. Vac. Sci. Technol. A 14, 984–989 (1996) https://doi.org/10.1116/1.580067

Abstract

View articletitled, Experiments and modeling of a helicon source

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Correlation of antenna charging and gate oxide reliability

Calvin T. Gabriel; Subhash R. Nariani

J. Vac. Sci. Technol. A 14, 990–994 (1996) https://doi.org/10.1116/1.580068

Abstract

View articletitled, Correlation of antenna charging and gate oxide reliability

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Contribution of short lifetime radicals to the growth of particles in SiH₄ high frequency discharges and the effects of particles on deposited films

Yukio Watanabe; Masaharu Shiratani; Tsuyoshi Fukuzawa; Hiroharu Kawasaki; Yoshio Ueda; Sanjay Singh; Hiroshi Ohkura

J. Vac. Sci. Technol. A 14, 995–1001 (1996) https://doi.org/10.1116/1.580069

Abstract

View articletitled, Contribution of short lifetime radicals to the growth of particles in SiH4 high frequency discharges and the effects of particles on deposited films

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New ultrahigh‐frequency plasma discharge for overcoming the limitations of etching processes

Seiji Samukawa; Toshiki Nakano

J. Vac. Sci. Technol. A 14, 1002–1006 (1996) https://doi.org/10.1116/1.580121

Abstract

View articletitled, New ultrahigh‐frequency plasma discharge for overcoming the limitations of etching processes

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Effects of magnetic field on oxide etching characteristics in planar type radio frequency inductively coupled plasma

Ho‐Jun Lee; Jung‐Hun Kim; Ki‐Woong Whang; Jung‐Hoon Joo

J. Vac. Sci. Technol. A 14, 1007–1010 (1996) https://doi.org/10.1116/1.580122

Abstract

View articletitled, Effects of magnetic field on oxide etching characteristics in planar type radio frequency inductively coupled plasma

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High density plasma etching of III–V nitrides

C. B. Vartuli; S. J. Pearton; C. R. Abernathy; R. J. Shul; A. J. Howard; S. P. Kilcoyne; J. E. Parmeter; M. Hagerott‐Crawford

J. Vac. Sci. Technol. A 14, 1011–1014 (1996) https://doi.org/10.1116/1.580123

Abstract

View articletitled, High density plasma etching of III–V nitrides

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Fabrication of special inertial confinement fusion targets using a depolymerizable mandrel technique

Stephan A. Letts; Evelyn M. Fearon; Leslie M. Allison; Robert Cook

J. Vac. Sci. Technol. A 14, 1015–1018 (1996) https://doi.org/10.1116/1.580124

Abstract

View articletitled, Fabrication of special inertial confinement fusion targets using a depolymerizable mandrel technique

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Preparation and characterization of beryllium doped organic plasma polymer coatings

R. Brusasco; S. Letts; P. Miller; M. Saculla; R. Cook

J. Vac. Sci. Technol. A 14, 1019–1024 (1996) https://doi.org/10.1116/1.580125

Abstract

View articletitled, Preparation and characterization of beryllium doped organic plasma polymer coatings

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Fabrication of large‐sized polystyrene shells

Uichi Kubo; Hitoshi Nakano

J. Vac. Sci. Technol. A 14, 1025–1027 (1996) https://doi.org/10.1116/1.580126

Abstract

View articletitled, Fabrication of large‐sized polystyrene shells

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Response surface study of resist etching in high density oxygen plasma and interactions of O₂ plasma with NiFe, Cu, Ta, and Al₂O₃

R. Hsiao; D. Miller; A. Kellock

J. Vac. Sci. Technol. A 14, 1028–1032 (1996) https://doi.org/10.1116/1.580127

Abstract

View articletitled, Response surface study of resist etching in high density oxygen plasma and interactions of O2 plasma with NiFe, Cu, Ta, and Al2O3

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Noncontact minority carrier lifetime measurement of Si and SiGe epilayers prepared by ultrahigh vacuum electron cyclotron resonance chemical vapor deposition

Seok‐Hee Hwang; Yun‐Phil Eo; Jung‐Hyun Seo; Ki‐Woong Whang; Euijoon Yoon; Heung‐Sik Tae

J. Vac. Sci. Technol. A 14, 1033–1036 (1996) https://doi.org/10.1116/1.580128

Abstract

View articletitled, Noncontact minority carrier lifetime measurement of Si and SiGe epilayers prepared by ultrahigh vacuum electron cyclotron resonance chemical vapor deposition

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Formation of TiN films with low Cl concentration by pulsed plasma chemical vapor deposition

Kenji Hiramatsu; Hiroshi Ohnishi; Toru Takahama; Ken‐ichiro Yamanishi

J. Vac. Sci. Technol. A 14, 1037–1040 (1996) https://doi.org/10.1116/1.580129

Abstract

View articletitled, Formation of TiN films with low Cl concentration by pulsed plasma chemical vapor deposition

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Etch rate and plasma density radial uniformity measurements in a cusped field helicon plasma etcher

A. K. Quick; R. T. S. Chen; N. Hershkowitz

J. Vac. Sci. Technol. A 14, 1041–1045 (1996) https://doi.org/10.1116/1.580130

Abstract

View articletitled, Etch rate and plasma density radial uniformity measurements in a cusped field helicon plasma etcher

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Magnetron reactive ion etching of group III‐nitride ternary alloys

G. F. McLane; T. Monahan; D. W. Eckart; S. J. Pearton; C. R. Abernathy

J. Vac. Sci. Technol. A 14, 1046–1049 (1996) https://doi.org/10.1116/1.580131

Abstract

View articletitled, Magnetron reactive ion etching of group III‐nitride ternary alloys

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New broad beam gas ion source for industrial application

N. V. Gavrilov; G. A. Mesyats; S. P. Nikulin; G. V. Radkovskii; Alexander Elkind; Anthony J. Perry; James R. Treglio

J. Vac. Sci. Technol. A 14, 1050–1055 (1996) https://doi.org/10.1116/1.580132

Abstract

View articletitled, New broad beam gas ion source for industrial application

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Sidewall and surface induced damage comparison between reactive ion etching and inductive plasma etching of InP using a CH₄/H₂/O₂ gas mixture

J. Etrillard; F. Héliot; P. Ossart; M. Juhel; G. Patriarche; P. Carcenac; C. Vieu; M. Puech; P. Maquin

J. Vac. Sci. Technol. A 14, 1056–1061 (1996) https://doi.org/10.1116/1.580133

Abstract

View articletitled, Sidewall and surface induced damage comparison between reactive ion etching and inductive plasma etching of InP using a CH4/H2/O2 gas mixture

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Study of radiation damage and contamination by magnetized inductively coupled plasma etching

Hyeon‐Soo Kim; Wook‐Jun Nam; Geun‐Young Yeom; Ho‐Jun Lee; Jung‐Hoon Kim; Ki‐Woong Whang

J. Vac. Sci. Technol. A 14, 1062–1066 (1996) https://doi.org/10.1116/1.580134

Abstract

View articletitled, Study of radiation damage and contamination by magnetized inductively coupled plasma etching

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Aspect ratio dependent etching on metal etch: Modeling and experiment

Richard Jun Xie; Joseph D. Kava; Mark Siegel

J. Vac. Sci. Technol. A 14, 1067–1071 (1996) https://doi.org/10.1116/1.580135

Abstract

View articletitled, Aspect ratio dependent etching on metal etch: Modeling and experiment

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In situ boron doping of Si and Si_1−xGe_x epitaxial layers by ultrahigh vacuum electron cyclotron resonance chemical vapor deposition

Jin‐Won Park; Ki‐Hyun Hwang; Sung‐Jae Joo; Euijoon Yoon; Seok‐Hee Hwang; Ki‐Woong Whang

J. Vac. Sci. Technol. A 14, 1072–1075 (1996) https://doi.org/10.1116/1.580136

Abstract

View articletitled, In situ boron doping of Si and Si1−xGex epitaxial layers by ultrahigh vacuum electron cyclotron resonance chemical vapor deposition

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A simple optical emission method for measuring percent dissociations of feed gases in plasmas: Application to Cl₂ in a high‐density helical resonator plasma

V. M. Donnelly

J. Vac. Sci. Technol. A 14, 1076–1087 (1996) https://doi.org/10.1116/1.580137

Abstract

View articletitled, A simple optical emission method for measuring percent dissociations of feed gases in plasmas: Application to Cl2 in a high‐density helical resonator plasma

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Effect of hydrogen addition to fluorocarbon gases (CF₄, C₄F₈) in selective SiO₂/Si etching by electron cyclotron resonance plasma

Hyun‐Ho Doh; Jung‐Hun Kim; Ki‐Woong Whang; Seok‐Hyun Lee

J. Vac. Sci. Technol. A 14, 1088–1091 (1996) https://doi.org/10.1116/1.580138

Abstract

View articletitled, Effect of hydrogen addition to fluorocarbon gases (CF4, C4F8) in selective SiO2/Si etching by electron cyclotron resonance plasma

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The role of polymer deposited in differential dielectric etch

S. Fang; C. Chiang; D. Fraser; B. Lee; P. Keswick; M. Chang; K. Fung

J. Vac. Sci. Technol. A 14, 1092–1095 (1996) https://doi.org/10.1116/1.580274

Abstract

View articletitled, The role of polymer deposited in differential dielectric etch

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Characterization of a low‐frequency inductively coupled plasma source

M. Tuszewski; J. A. Tobin

J. Vac. Sci. Technol. A 14, 1096–1101 (1996) https://doi.org/10.1116/1.580275

Abstract

View articletitled, Characterization of a low‐frequency inductively coupled plasma source

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Temperature dependent electron cyclotron resonance etching of InP, GaP, and GaAs

R. J. Shul; A. J. Howard; C. B. Vartuli; P. A. Barnes; W. Seng

J. Vac. Sci. Technol. A 14, 1102–1106 (1996) https://doi.org/10.1116/1.580276

Abstract

View articletitled, Temperature dependent electron cyclotron resonance etching of InP, GaP, and GaAs

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Role of substrates for heteroepitaxial growth of low room‐temperature resistivity RuO₂ thin films deposited by pulsed laser deposition

Q. X. Jia; X. D. Wu; G. Song; S. R. Foltyn

J. Vac. Sci. Technol. A 14, 1107–1110 (1996) https://doi.org/10.1116/1.580277

Abstract

View articletitled, Role of substrates for heteroepitaxial growth of low room‐temperature resistivity RuO2 thin films deposited by pulsed laser deposition

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Mechanisms affecting kinetic energies of laser‐ablated materials

K. R. Chen; J. N. Leboeuf; R. F. Wood; D. B. Geohegan; J. M. Donato; C. L. Liu; A. A. Puretzky

J. Vac. Sci. Technol. A 14, 1111–1114 (1996) https://doi.org/10.1116/1.580278

Abstract

View articletitled, Mechanisms affecting kinetic energies of laser‐ablated materials

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Ion implantation for silicon device manufacturing: A vacuum perspective

Michael I. Current

J. Vac. Sci. Technol. A 14, 1115–1123 (1996) https://doi.org/10.1116/1.580279

Abstract

View articletitled, Ion implantation for silicon device manufacturing: A vacuum perspective

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Low dielectric constant, fluorine‐doped SiO₂ for intermetal dielectric

D. R. Denison; J. C. Barbour; J. H. Burkhart

J. Vac. Sci. Technol. A 14, 1124–1126 (1996) https://doi.org/10.1116/1.580280

Abstract

View articletitled, Low dielectric constant, fluorine‐doped SiO2 for intermetal dielectric

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Failure mechanisms of anodized aluminum parts used in chemical vapor deposition chambers

Srihari Ponnekanti; Laxman Murugesh; Eric Hanson

J. Vac. Sci. Technol. A 14, 1127–1131 (1996) https://doi.org/10.1116/1.580281

Abstract

View articletitled, Failure mechanisms of anodized aluminum parts used in chemical vapor deposition chambers

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Dry development of sub‐0.25 μm features patterned with 193 nm silylation resist

S. C. Palmateer; A. R. Forte; R. R. Kunz; M. W. Horn

J. Vac. Sci. Technol. A 14, 1132–1136 (1996) https://doi.org/10.1116/1.580282

Abstract

View articletitled, Dry development of sub‐0.25 μm features patterned with 193 nm silylation resist

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Optical emission diagnostics for contact etching in Applied Materials Centura HDP 5300 etcher

Keith Guinn; K. Tokashiki; S. C. McNevin; M. Cerullo

J. Vac. Sci. Technol. A 14, 1137–1141 (1996) https://doi.org/10.1116/1.580283

Abstract

View articletitled, Optical emission diagnostics for contact etching in Applied Materials Centura HDP 5300 etcher

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Simulation and experimental study of re‐emission during sputter deposition of Ti–W films

B. R. Rogers; T. S. Cale; Y. K. Chang

J. Vac. Sci. Technol. A 14, 1142–1146 (1996) https://doi.org/10.1116/1.580284

Abstract

View articletitled, Simulation and experimental study of re‐emission during sputter deposition of Ti–W films

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Three‐dimensional equipment modeling for chemical vapor deposition

Christoph Werner; Matthias Ilg; Kevin Uram

J. Vac. Sci. Technol. A 14, 1147–1151 (1996) https://doi.org/10.1116/1.580285

Abstract

View articletitled, Three‐dimensional equipment modeling for chemical vapor deposition

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Study of station flow dynamics in a sequential multiwafer chemical vapor deposition batch reactor using reactor modeling

E. J. McInerney

J. Vac. Sci. Technol. A 14, 1152–1155 (1996) https://doi.org/10.1116/1.580286

Abstract

View articletitled, Study of station flow dynamics in a sequential multiwafer chemical vapor deposition batch reactor using reactor modeling

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Surface barrier detection in plasma‐enhanced chemical vapor deposition oxides

Jerris Peavey; Robert Dawson; John Lowell

J. Vac. Sci. Technol. A 14, 1156–1160 (1996) https://doi.org/10.1116/1.580287

Abstract

View articletitled, Surface barrier detection in plasma‐enhanced chemical vapor deposition oxides

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Issues of atomic‐resolution structure and chemical analysis by scanning probe microscopy and spectroscopy

R. Wiesendanger; M. Bode; R. Pascal; W. Allers; U. D. Schwarz

J. Vac. Sci. Technol. A 14, 1161–1167 (1996) https://doi.org/10.1116/1.580259

Abstract

View articletitled, Issues of atomic‐resolution structure and chemical analysis by scanning probe microscopy and spectroscopy

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Quantitative two‐dimensional dopant profiling of abrupt dopant profiles by cross‐sectional scanning capacitance microscopy

Y. Huang; C. C. Williams; M. A. Wendman

J. Vac. Sci. Technol. A 14, 1168–1171 (1996) https://doi.org/10.1116/1.580260

Abstract

View articletitled, Quantitative two‐dimensional dopant profiling of abrupt dopant profiles by cross‐sectional scanning capacitance microscopy

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Photothermal imaging by scanning thermal microscopy

E. Oesterschulze; M. Stopka

J. Vac. Sci. Technol. A 14, 1172–1177 (1996) https://doi.org/10.1116/1.580261

Abstract

View articletitled, Photothermal imaging by scanning thermal microscopy

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Room temperature Coulomb blockade and Coulomb staircase from self‐assembled nanostructures

R. P. Andres; S. Datta; M. Dorogi; J. Gomez; J. I. Henderson; D. B. Janes; V. R. Kolagunta; C. P. Kubiak; W. Mahoney; R. F. Osifchin; R. Reifenberger; M. P. Samanta; W. Tian

J. Vac. Sci. Technol. A 14, 1178–1183 (1996) https://doi.org/10.1116/1.580262

Abstract

View articletitled, Room temperature Coulomb blockade and Coulomb staircase from self‐assembled nanostructures

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Adsorption of CO on Pd/Al₂O₃/Ta(110) model catalysts

D. R. Rainer; M.‐C. Wu; D. I. Mahon; D. W. Goodman

J. Vac. Sci. Technol. A 14, 1184–1188 (1996) https://doi.org/10.1116/1.580263

Abstract

View articletitled, Adsorption of CO on Pd/Al2O3/Ta(110) model catalysts

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Control of etch profile for fabrication of Si microsensors

W. H. Juan; S. W. Pang

J. Vac. Sci. Technol. A 14, 1189–1193 (1996) https://doi.org/10.1116/1.580264

Abstract

View articletitled, Control of etch profile for fabrication of Si microsensors

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Ultrafine silicon quantum wires fabricated by selective chemical etching and thermal oxidation

Y. Shi; J. L. Liu; F. Wang; Y. Lu; R. Zhang; S. L. Gu; P. Han; L. Q. Hu; Y. D. Zheng; C. Y. Lin; D. A. Du

J. Vac. Sci. Technol. A 14, 1194–1198 (1996) https://doi.org/10.1116/1.580265

Abstract

View articletitled, Ultrafine silicon quantum wires fabricated by selective chemical etching and thermal oxidation

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Optical response from the ultraviolet to the far infrared and atomic force microscopy of Au implanted in CaF₂

D. O. Henderson; Y. S. Tung; A. Ueda; R. Mu; Y. Xue; C. Hall; W. E. Collins; C. W. White; R. A. Zuhr; Jane G. Zhu; Paul W. Wang

J. Vac. Sci. Technol. A 14, 1199–1204 (1996) https://doi.org/10.1116/1.580266

Abstract

View articletitled, Optical response from the ultraviolet to the far infrared and atomic force microscopy of Au implanted in CaF2

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Controlled bias ramping for scanning tunneling microscopy of molecular adsorbates

J. S. Roach; I. H. Musselman; J. Honeyman

J. Vac. Sci. Technol. A 14, 1205–1207 (1996) https://doi.org/10.1116/1.580267

Abstract

View articletitled, Controlled bias ramping for scanning tunneling microscopy of molecular adsorbates

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Nanometer scale lithography of silicon(100) surfaces using tapping mode atomic force microscopy

J. Servat; P. Gorostiza; F. Sanz; F. Pérez‐Murano; N. Barniol; G. Abadal; X. Aymerich

J. Vac. Sci. Technol. A 14, 1208–1212 (1996) https://doi.org/10.1116/1.580268

Abstract

View articletitled, Nanometer scale lithography of silicon(100) surfaces using tapping mode atomic force microscopy

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Electric field effects on force curves for oxidized silicon tips and ice surfaces in a controlled environment

C. R. Slaughterbeck; E. W. Kukes; B. Pittenger; D. J. Cook; P. C. Williams; V. L. Eden; S. C. Fain, Jr.

J. Vac. Sci. Technol. A 14, 1213–1218 (1996) https://doi.org/10.1116/1.580269

Abstract

View articletitled, Electric field effects on force curves for oxidized silicon tips and ice surfaces in a controlled environment

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Geometrical capacitance of the tip–semiconductor junction

A. Sakai; S. Kurokawa; Y. Hasegawa

J. Vac. Sci. Technol. A 14, 1219–1222 (1996) https://doi.org/10.1116/1.580270

Abstract

View articletitled, Geometrical capacitance of the tip–semiconductor junction

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Scanning probe anodization: Nanolithography using thin films of anodically oxidizable materials as resists

Hiroyuki Sugimura; Nobuyuki Nakagiri

J. Vac. Sci. Technol. A 14, 1223–1227 (1996) https://doi.org/10.1116/1.580271

Abstract

View articletitled, Scanning probe anodization: Nanolithography using thin films of anodically oxidizable materials as resists

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Standardized procedure for calibrating height scales in atomic force microscopy on the order of 1 nm

M. Suzuki; S. Aoyama; T. Futatsuki; A. J. Kelly; T. Osada; A. Nakano; Y. Sakakibara; Y. Suzuki; H. Takami; T. Takenobu; M. Yasutake

J. Vac. Sci. Technol. A 14, 1228–1232 (1996) https://doi.org/10.1116/1.580272

Abstract

View articletitled, Standardized procedure for calibrating height scales in atomic force microscopy on the order of 1 nm

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Chemical vapor deposition diamond for tips in nanoprobe experiments

Ph. Niedermann; W. Hänni; N. Blanc; R. Christoph; J. Burger

J. Vac. Sci. Technol. A 14, 1233–1236 (1996) https://doi.org/10.1116/1.580273

Abstract

View articletitled, Chemical vapor deposition diamond for tips in nanoprobe experiments

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Beam vacuum system of Brookhaven’s muon storage ring

H. C. Hseuh; L. Snydstrup; M. Mapes; C. Pai

J. Vac. Sci. Technol. A 14, 1237–1241 (1996) https://doi.org/10.1116/1.579934

Abstract

View articletitled, Beam vacuum system of Brookhaven’s muon storage ring

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Commercial helium permeation leak standards: Their properties and reliability

P. J. Abbott; S. A. Tison

J. Vac. Sci. Technol. A 14, 1242–1246 (1996) https://doi.org/10.1116/1.579935

Abstract

View articletitled, Commercial helium permeation leak standards: Their properties and reliability

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Fundamental leak calibration system for gas leaks with a defined pressure difference over the leak element

U. Wälchli; A. L. Stöckli; F. Rapp; M. A. Bösch; A. Schmid

J. Vac. Sci. Technol. A 14, 1247–1251 (1996) https://doi.org/10.1116/1.579936

Abstract

View articletitled, Fundamental leak calibration system for gas leaks with a defined pressure difference over the leak element

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Designing low pressure systems with continuum models

Vikram Singh; Butch Berney; Anantha Krishnan

J. Vac. Sci. Technol. A 14, 1252–1257 (1996) https://doi.org/10.1116/1.579937

Abstract

View articletitled, Designing low pressure systems with continuum models

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High‐pressure effects in miniature arrays of quadrupole analyzers for residual gas analysis from 10⁻⁹ to 10⁻² Torr

R. J. Ferran; S. Boumsellek

J. Vac. Sci. Technol. A 14, 1258–1265 (1996) https://doi.org/10.1116/1.579938

Abstract

View articletitled, High‐pressure effects in miniature arrays of quadrupole analyzers for residual gas analysis from 10−9 to 10−2 Torr

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Using diode laser spectroscopy to evaluate techniques for acceleration of etch chamber evacuation

James J. F. McAndrew; Ronald S. Inman

J. Vac. Sci. Technol. A 14, 1266–1272 (1996) https://doi.org/10.1116/1.579939

Abstract

View articletitled, Using diode laser spectroscopy to evaluate techniques for acceleration of etch chamber evacuation

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Photon stimulated desorption measurement of an extruded aluminum beam chamber for the Advanced Photon Source

C. L. Foerster; C. Lanni; J. R. Noonan; R. A. Rosenberg

J. Vac. Sci. Technol. A 14, 1273–1276 (1996) https://doi.org/10.1116/1.579940

Abstract

View articletitled, Photon stimulated desorption measurement of an extruded aluminum beam chamber for the Advanced Photon Source

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Analysis of ultrahigh vacuum isotherm data with the Brunauer–Emmett–Teller equation

J. P. Hobson

J. Vac. Sci. Technol. A 14, 1277–1280 (1996) https://doi.org/10.1116/1.579941

Abstract

View articletitled, Analysis of ultrahigh vacuum isotherm data with the Brunauer–Emmett–Teller equation

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Alpha‐particle gas‐pressure sensor

M. G. Buehler; L. D. Bell; M. H. Hecht

J. Vac. Sci. Technol. A 14, 1281–1287 (1996) https://doi.org/10.1116/1.579942

Abstract

View articletitled, Alpha‐particle gas‐pressure sensor

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Enhanced ignition of cold cathode gauges through the use of radioactive isotopes

K. M. Welch; L. A. Smart; R. J. Todd

J. Vac. Sci. Technol. A 14, 1288–1291 (1996) https://doi.org/10.1116/1.579943

Abstract

View articletitled, Enhanced ignition of cold cathode gauges through the use of radioactive isotopes

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Starting delays in cold‐cathode gauges at low pressures

B. R. F. Kendall; E. Drubetsky

J. Vac. Sci. Technol. A 14, 1292–1296 (1996) https://doi.org/10.1116/1.579944

Abstract

View articletitled, Starting delays in cold‐cathode gauges at low pressures

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A primary standard high vacuum calibration station for industrial applications

P. D. Levine; J. R. Sweda

J. Vac. Sci. Technol. A 14, 1297–1302 (1996) https://doi.org/10.1116/1.579945

Abstract

View articletitled, A primary standard high vacuum calibration station for industrial applications

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Energy correction by evaporated gold in x‐ray photoelectron spectroscopy

T. Ogama

J. Vac. Sci. Technol. A 14, 1309–1313 (1996) https://doi.org/10.1116/1.579946

Abstract

View articletitled, Energy correction by evaporated gold in x‐ray photoelectron spectroscopy

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The nature of hydrogen in x‐ray photoelectron spectroscopy: General patterns from hydroxides to hydrogen bonding

S. J. Kerber; J. J. Bruckner; K. Wozniak; S. Seal; S. Hardcastle; T. L. Barr

J. Vac. Sci. Technol. A 14, 1314–1320 (1996) https://doi.org/10.1116/1.579947

Abstract

View articletitled, The nature of hydrogen in x‐ray photoelectron spectroscopy: General patterns from hydroxides to hydrogen bonding

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Preparation and characterization of anisotropic chain structures in polyimide films

Hai‐Ming Wu; Yang‐Ming Zhu; Qi Luo; Xiao‐Ming Yang; Zu‐Hong Lu; Yu Wei

J. Vac. Sci. Technol. A 14, 1321–1325 (1996) https://doi.org/10.1116/1.579948

Abstract

View articletitled, Preparation and characterization of anisotropic chain structures in polyimide films

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In situ Fourier transform infrared‐attenuated total reflection spectroscopy monitoring of polyaniline synthesis mechanism on the p‐type silicon electrode

Qinbai Fan; Lily M. Ng

J. Vac. Sci. Technol. A 14, 1326–1329 (1996) https://doi.org/10.1116/1.579949

Abstract

View articletitled, In situ Fourier transform infrared‐attenuated total reflection spectroscopy monitoring of polyaniline synthesis mechanism on the p‐type silicon electrode

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Thin polymer films prepared by radio frequency plasma sputtering of polytetrafluoroethylene and polyetherimide targets

G. A. Hishmeh; T. L. Barr; A. Sklyarov; S. Hardcastle

J. Vac. Sci. Technol. A 14, 1330–1338 (1996) https://doi.org/10.1116/1.579950

Abstract

View articletitled, Thin polymer films prepared by radio frequency plasma sputtering of polytetrafluoroethylene and polyetherimide targets

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Surface functionalization of polymeric substrates from radio frequency‐plasma‐generated silylium ions

Z. Q. Hua; F. Denes; R. A. Young

J. Vac. Sci. Technol. A 14, 1339–1347 (1996) https://doi.org/10.1116/1.579951

Abstract

View articletitled, Surface functionalization of polymeric substrates from radio frequency‐plasma‐generated silylium ions

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Auger electron spectroscopy and x‐ray photoelectron spectroscopy studies of adhesion failure of Ni/Au‐plated contacts in ceramic electronic packages

D. N. Braski; E. D. Winters

J. Vac. Sci. Technol. A 14, 1348–1351 (1996) https://doi.org/10.1116/1.579952

Abstract

View articletitled, Auger electron spectroscopy and x‐ray photoelectron spectroscopy studies of adhesion failure of Ni/Au‐plated contacts in ceramic electronic packages

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Detection of tribochemical reactions using photoelectron emission microscopy

Eric L. Montei; Martin E. Kordesch

J. Vac. Sci. Technol. A 14, 1352–1356 (1996) https://doi.org/10.1116/1.579953

Abstract

View articletitled, Detection of tribochemical reactions using photoelectron emission microscopy

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A spectroscopic investigation of phosphate adsorption onto iron oxides

M. G. Nooney; T. S. Murrell; J. S. Corneille; E. I. Rusert; L. R. Hossner; D. W. Goodman

J. Vac. Sci. Technol. A 14, 1357–1361 (1996) https://doi.org/10.1116/1.579954

Abstract

View articletitled, A spectroscopic investigation of phosphate adsorption onto iron oxides

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In situ observation of the oxidation and reduction processes on Fe‐Cr alloys

M. G. Walls; A. Ponthieux; B. Rondot; R. A. Owen

J. Vac. Sci. Technol. A 14, 1362–1367 (1996) https://doi.org/10.1116/1.579955

Abstract

View articletitled, In situ observation of the oxidation and reduction processes on Fe‐Cr alloys

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Interplay between step velocity and morphology during the dissolution of CaCO₃ surface

Yong Liang; Donald R. Baer; James M. McCoy; John P. LaFemina

J. Vac. Sci. Technol. A 14, 1368–1375 (1996) https://doi.org/10.1116/1.579956

Abstract

View articletitled, Interplay between step velocity and morphology during the dissolution of CaCO3 surface

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Chemical microanalysis by reflected electron energy loss microscopy

E. Paparazzo

J. Vac. Sci. Technol. A 14, 1376–1381 (1996) https://doi.org/10.1116/1.579957

Abstract

View articletitled, Chemical microanalysis by reflected electron energy loss microscopy

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A novel vacuum process for OH addition to polystyrene, polyethylene, and Teflon^T^M

J. Q. Sun; I. Bello; S. Bederka; W. M. Lau; Zhangda Lin

J. Vac. Sci. Technol. A 14, 1382–1386 (1996) https://doi.org/10.1116/1.579958

Abstract

View articletitled, A novel vacuum process for OH addition to polystyrene, polyethylene, and TeflonTM

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Molecular beam epitaxial growth and characterization of mixed (Ti,Nb)O₂ rutile films on TiO₂(100)

S. A. Chambers; Y. Gao; S. Thevuthasan; Y. Liang; N. R. Shivaparan; R. J. Smith

J. Vac. Sci. Technol. A 14, 1387–1394 (1996) https://doi.org/10.1116/1.579959

Abstract

View articletitled, Molecular beam epitaxial growth and characterization of mixed (Ti,Nb)O2 rutile films on TiO2(100)

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The growth and characterization of layered, binary thin‐film oxides: MgO–NiO and CaO–NiO

C. Xu; W. S. Oh; Q. Guo; D. W. Goodman

J. Vac. Sci. Technol. A 14, 1395–1400 (1996) https://doi.org/10.1116/1.579960

Abstract

View articletitled, The growth and characterization of layered, binary thin‐film oxides: MgO–NiO and CaO–NiO

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High resolution digital Auger database of true spectra for Auger electron spectroscopy intensities

M. P. Seah; I. S. Gilmore

J. Vac. Sci. Technol. A 14, 1401–1407 (1996) https://doi.org/10.1116/1.579961

Abstract

View articletitled, High resolution digital Auger database of true spectra for Auger electron spectroscopy intensities

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Carbon reference Auger electron spectra measured with a high‐performance cylindrical mirror analyzer

Keisuke Goto; Yoshinori Takeichi

J. Vac. Sci. Technol. A 14, 1408–1414 (1996) https://doi.org/10.1116/1.579962

Abstract

View articletitled, Carbon reference Auger electron spectra measured with a high‐performance cylindrical mirror analyzer

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Surface nanostructure determination by x‐ray photoemission spectroscopy peak shape analysis

S. Tougaard

J. Vac. Sci. Technol. A 14, 1415–1423 (1996) https://doi.org/10.1116/1.579963

Abstract

View articletitled, Surface nanostructure determination by x‐ray photoemission spectroscopy peak shape analysis

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Curve fitting in surface analysis and the effect of background inclusion in the fitting process

Peter M. A. Sherwood

J. Vac. Sci. Technol. A 14, 1424–1432 (1996) https://doi.org/10.1116/1.579964

Abstract

View articletitled, Curve fitting in surface analysis and the effect of background inclusion in the fitting process

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Quantitative surface composition analysis using very high intensity nonresonant multiphoton ionization

Chun He; Julian Basler; Anumita Paul; Christopher H. Becker

J. Vac. Sci. Technol. A 14, 1433–1438 (1996) https://doi.org/10.1116/1.579965

Abstract

View articletitled, Quantitative surface composition analysis using very high intensity nonresonant multiphoton ionization

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The chemistry of simple alkyl species on Pt(111) generated by hyperthermal collisions

Darren J. Oakes; Helen E. Newell; Frank J. M. Rutten; Martin R. S. McCoustra; Michael A. Chesters

J. Vac. Sci. Technol. A 14, 1439–1447 (1996) https://doi.org/10.1116/1.579966

Abstract

View articletitled, The chemistry of simple alkyl species on Pt(111) generated by hyperthermal collisions

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Adsorption of CO and hydrogen on the K‐modified Ir(111) surface

M. Schick; J. Lauterbach; W. H. Weinberg

J. Vac. Sci. Technol. A 14, 1448–1452 (1996) https://doi.org/10.1116/1.579967

Abstract

View articletitled, Adsorption of CO and hydrogen on the K‐modified Ir(111) surface

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Electron‐induced surface chemistry: Synthesis of NH_x fragments on Ag(111)

A. L. Schwaner; E. D. Pylant; J. M. White

J. Vac. Sci. Technol. A 14, 1453–1456 (1996) https://doi.org/10.1116/1.579968

Abstract

View articletitled, Electron‐induced surface chemistry: Synthesis of NHx fragments on Ag(111)

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Basis for the structure sensitivity of the CO+NO reaction on palladium

S. M. Vesecky; D. R. Rainer; D. W. Goodman

J. Vac. Sci. Technol. A 14, 1457–1463 (1996) https://doi.org/10.1116/1.579969

Abstract

View articletitled, Basis for the structure sensitivity of the CO+NO reaction on palladium

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A model catalyst for methanol synthesis: Zn‐deposited and Zn‐free Cu surfaces

I. Nakamura; T. Fujitani; T. Uchijima; J. Nakamura

J. Vac. Sci. Technol. A 14, 1464–1468 (1996) https://doi.org/10.1116/1.579970

Abstract

View articletitled, A model catalyst for methanol synthesis: Zn‐deposited and Zn‐free Cu surfaces

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Ethylene oxide interaction with Pd surfaces: Experimental and theoretical results

Ratna Shekhar; Mark A. Barteau

J. Vac. Sci. Technol. A 14, 1469–1474 (1996) https://doi.org/10.1116/1.579971

Abstract

View articletitled, Ethylene oxide interaction with Pd surfaces: Experimental and theoretical results

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Reactivities of carbon‐ and nitrogen‐modified Mo(110): A comparison of modification effects by surface and interstitial adatoms

B. Frühberger; J. G. Chen; J. Eng, Jr.; B. E. Bent

J. Vac. Sci. Technol. A 14, 1475–1481 (1996) https://doi.org/10.1116/1.579972

Abstract

View articletitled, Reactivities of carbon‐ and nitrogen‐modified Mo(110): A comparison of modification effects by surface and interstitial adatoms

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Electronic and vibrational spectra of InP quantum dots formed by sequential ion implantation

R. Mu; D. O. Henderson; Y. S. Tung; A. Ueda; C. Hall; W. E. Collins; C. W. White; R. A. Zuhr; Jane G. Zhu

J. Vac. Sci. Technol. A 14, 1482–1487 (1996) https://doi.org/10.1116/1.579973

Abstract

View articletitled, Electronic and vibrational spectra of InP quantum dots formed by sequential ion implantation

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Scanning force microscopy and polymerization studies on cast thin films of hectorite and montmorillonite

Timothy L. Porter; Michael P. Eastman; Michael E. Hagerman; Jennifer L. Attuso; Edlin D. Bain

J. Vac. Sci. Technol. A 14, 1488–1493 (1996) https://doi.org/10.1116/1.579974

Abstract

View articletitled, Scanning force microscopy and polymerization studies on cast thin films of hectorite and montmorillonite

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Structural and chemical characterization of vapor‐deposited polythiophene films

T. R. Dillingham; D. M. Cornelison; S. W. Townsend

J. Vac. Sci. Technol. A 14, 1494–1498 (1996) https://doi.org/10.1116/1.579975

Abstract

View articletitled, Structural and chemical characterization of vapor‐deposited polythiophene films

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Interaction of SiH₄ with Si(100)2×1 and with Si(111)7×7 at 690 K: A comparative scanning tunneling microscopy study

M. Fehrenbacher; J. Spitzmüller; U. Memmert; H. Rauscher; R. J. Behm

J. Vac. Sci. Technol. A 14, 1499–1504 (1996) https://doi.org/10.1116/1.579976

Abstract

View articletitled, Interaction of SiH4 with Si(100)2×1 and with Si(111)7×7 at 690 K: A comparative scanning tunneling microscopy study

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Dependence of photochemically etched porous silicon formation on photoetching wavelength and power

L. A. Jones; Ö. Yükseker; D. F. Thomas

J. Vac. Sci. Technol. A 14, 1505–1510 (1996) https://doi.org/10.1116/1.579977

Abstract

View articletitled, Dependence of photochemically etched porous silicon formation on photoetching wavelength and power

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Coadsorption of CO and hydrogen on the Ir(111) surface

J. Lauterbach; M. Schick; W. H. Weinberg

J. Vac. Sci. Technol. A 14, 1511–1515 (1996) https://doi.org/10.1116/1.579978

Abstract

View articletitled, Coadsorption of CO and hydrogen on the Ir(111) surface

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Electron‐induced surface chemistry: Production and characterization of NH₂ and NH species on Pt(111)

Y.‐M. Sun; D. Sloan; H. Ihm; J. M. White

J. Vac. Sci. Technol. A 14, 1516–1521 (1996) https://doi.org/10.1116/1.580288

Abstract

View articletitled, Electron‐induced surface chemistry: Production and characterization of NH2 and NH species on Pt(111)

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Evidence for a surface optical phonon mode on NaCl(001)

G. Benedek; A. Glebov; W. Silvestri; J. G. Skofronick

J. Vac. Sci. Technol. A 14, 1522–1525 (1996) https://doi.org/10.1116/1.580289

Abstract

View articletitled, Evidence for a surface optical phonon mode on NaCl(001)

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Chemical and spectroscopic studies of metal oxide surfaces

D. W. Goodman

J. Vac. Sci. Technol. A 14, 1526–1531 (1996) https://doi.org/10.1116/1.580290

Abstract

View articletitled, Chemical and spectroscopic studies of metal oxide surfaces

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Interactions of small molecules with TiO₂(110) surfaces: The role of defects

Li‐Qiong Wang; A. N. Shultz; D. R. Baer; M. H. Engelhard

J. Vac. Sci. Technol. A 14, 1532–1538 (1996) https://doi.org/10.1116/1.580291

Abstract

View articletitled, Interactions of small molecules with TiO2(110) surfaces: The role of defects

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Chemical sensors with catalytic metal gates

Ingemar Lundström; Lars‐Gunnar Petersson

J. Vac. Sci. Technol. A 14, 1539–1545 (1996) https://doi.org/10.1116/1.580292

Abstract

View articletitled, Chemical sensors with catalytic metal gates

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Interaction of CO with Pd clusters supported on a thin alumina film

A. Sandell; J. Libuda; P. A. Brühwiler; S. Andersson; A. J. Maxwell; M. Bäumer; N. Mårtensson; H. J. Freund

J. Vac. Sci. Technol. A 14, 1546–1551 (1996) https://doi.org/10.1116/1.580293

Abstract

View articletitled, Interaction of CO with Pd clusters supported on a thin alumina film

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Photochemistry of O₂ on Ag(110) using picosecond ultraviolet laser pulses

V. J. Erkkila; M. A. Hoffbauer; J. M. White

J. Vac. Sci. Technol. A 14, 1552–1556 (1996) https://doi.org/10.1116/1.580294

Abstract

View articletitled, Photochemistry of O2 on Ag(110) using picosecond ultraviolet laser pulses

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Photoreactions of methyl iodide multilayers on the TiO₂(110) surface

Seong Han Kim; Kimberly A. Briggman; Peter C. Stair; Eric Weitz

J. Vac. Sci. Technol. A 14, 1557–1561 (1996) https://doi.org/10.1116/1.580295

Abstract

View articletitled, Photoreactions of methyl iodide multilayers on the TiO2(110) surface

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Scattering of H₂ (v=1, J=1) from Cu(110): Survival probability versus incident energy

Michael Gostein; Greg O. Sitz

J. Vac. Sci. Technol. A 14, 1562–1565 (1996) https://doi.org/10.1116/1.580296

Abstract

View articletitled, Scattering of H2 (v=1, J=1) from Cu(110): Survival probability versus incident energy

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Dynamics of molecular chemisorption of N₂ on the Ru(001) surface

D. C. Seets; M. C. Wheeler; C. B. Mullins

J. Vac. Sci. Technol. A 14, 1566–1571 (1996) https://doi.org/10.1116/1.580297

Abstract

View articletitled, Dynamics of molecular chemisorption of N2 on the Ru(001) surface

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Kinetics and dynamics of the trapping‐mediated dissociative chemisorption of oxygen on Ru(001)

M. C. Wheeler; D. C. Seets; C. B. Mullins

J. Vac. Sci. Technol. A 14, 1572–1577 (1996) https://doi.org/10.1116/1.580298

Abstract

View articletitled, Kinetics and dynamics of the trapping‐mediated dissociative chemisorption of oxygen on Ru(001)

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Effect of preadsorbates on the dissociation dynamics of ethane on Ir(110)

W. Hago; D. Kelly; W. H. Weinberg

J. Vac. Sci. Technol. A 14, 1578–1582 (1996) https://doi.org/10.1116/1.580299

Abstract

View articletitled, Effect of preadsorbates on the dissociation dynamics of ethane on Ir(110)

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Dynamics and structure of chemisorbed CO on Cu(110): An electron‐stimulated desorption ion angular distribution study

Joachim Ahner; Dan Mocuta; R. D. Ramsier; John T. Yates, Jr.

J. Vac. Sci. Technol. A 14, 1583–1587 (1996) https://doi.org/10.1116/1.580300

Abstract

View articletitled, Dynamics and structure of chemisorbed CO on Cu(110): An electron‐stimulated desorption ion angular distribution study

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Trapping‐mediated dissociative chemisorption of propane on Ir(110)

D. Kelly; W. H. Weinberg

J. Vac. Sci. Technol. A 14, 1588–1592 (1996) https://doi.org/10.1116/1.580301

Abstract

View articletitled, Trapping‐mediated dissociative chemisorption of propane on Ir(110)

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Grain size and hillock growth of vacuum‐evaporated SnO₂ thin films

W. K. Man; H. Yan; S. P. Wong; I. H. Wilson; T. K. S. Wong

J. Vac. Sci. Technol. A 14, 1593–1597 (1996) https://doi.org/10.1116/1.580302

Abstract

View articletitled, Grain size and hillock growth of vacuum‐evaporated SnO2 thin films

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Intermediate states in the adsorption of NO on Ir(111): Substrate temperature effects

J. E. Davis; S. G. Karseboom; P. D. Nolan; C. B. Mullins

J. Vac. Sci. Technol. A 14, 1598–1603 (1996) https://doi.org/10.1116/1.580303

Abstract

View articletitled, Intermediate states in the adsorption of NO on Ir(111): Substrate temperature effects

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Numerical study of apparent activation energies of diamond growth rates in hot filament chemical vapor deposition systems

Frank Behrendt; Olaf Deutschmann; Bernhard Ruf; Jürgen Warnatz

J. Vac. Sci. Technol. A 14, 1604–1608 (1996) https://doi.org/10.1116/1.580304

Abstract

View articletitled, Numerical study of apparent activation energies of diamond growth rates in hot filament chemical vapor deposition systems

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Interaction of sulfur and bimetallic surfaces: Fe‐promoted sulfidation of Mo(110)

José A. Rodriguez; Markus Kuhn

J. Vac. Sci. Technol. A 14, 1609–1613 (1996) https://doi.org/10.1116/1.580305

Abstract

View articletitled, Interaction of sulfur and bimetallic surfaces: Fe‐promoted sulfidation of Mo(110)

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Surface chemistry study of water vapor and oxygen on Ni₃(Al, Ti)(100) and Ni₃Fe surfaces

W. J. Chia; Y. W. Chung

J. Vac. Sci. Technol. A 14, 1614–1619 (1996) https://doi.org/10.1116/1.580306

Abstract

View articletitled, Surface chemistry study of water vapor and oxygen on Ni3(Al, Ti)(100) and Ni3Fe surfaces

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Adsorption and ionization of HCl on an ice surface

Sally F. Banham; John R. Sodeau; Andrew B. Horn; Martin R. S. McCoustra; Michael A. Chesters

J. Vac. Sci. Technol. A 14, 1620–1626 (1996) https://doi.org/10.1116/1.580307

Abstract

View articletitled, Adsorption and ionization of HCl on an ice surface

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Fast photoreactions of oxygenates on tropospheric fly ash particles

H. Idriss; E. G. Seebauer

J. Vac. Sci. Technol. A 14, 1627–1632 (1996) https://doi.org/10.1116/1.580308

Abstract

View articletitled, Fast photoreactions of oxygenates on tropospheric fly ash particles

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Molecular dynamics simulation of multilayer homoepitaxial deposition on face‐centered‐cubic(100) metal surfaces

Cynthia L. Kelchner; Andrew E. DePristo

J. Vac. Sci. Technol. A 14, 1633–1636 (1996) https://doi.org/10.1116/1.580309

Abstract

View articletitled, Molecular dynamics simulation of multilayer homoepitaxial deposition on face‐centered‐cubic(100) metal surfaces

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Epitaxial growth of Co₃O₄ on CoO(100)

G. A. Carson; M. H. Nassir; M. A. Langell

J. Vac. Sci. Technol. A 14, 1637–1642 (1996) https://doi.org/10.1116/1.580310

Abstract