Skip Nav Destination

Issues

Select Year

Issue

Supersonic molecular beam scattering as a probe of thin film deposition processes

L.‐Q. Xia; M. E. Jones; N. Maity; J. R. Engstrom

J. Vac. Sci. Technol. A 13, 2651–2664 (1995) https://doi.org/10.1116/1.579464

Abstract

View articletitled, Supersonic molecular beam scattering as a probe of thin film deposition processes

Open the PDF for in another window

Effect of surface excitations in determining the inelastic mean free path by elastic peak electron spectroscopy

Y. F. Chen

J. Vac. Sci. Technol. A 13, 2665–2670 (1995) https://doi.org/10.1116/1.579465

Abstract

View articletitled, Effect of surface excitations in determining the inelastic mean free path by elastic peak electron spectroscopy

Open the PDF for in another window

X‐ray photoelectron spectroscopy study of submonolayer native oxides on HF‐treated Si surfaces

Fumiko Yano; Akiko Hiraoka; Toshihiko Itoga; Hisao Kojima; Keiichi Kanehori; Yasuhiro Mitsui

J. Vac. Sci. Technol. A 13, 2671–2675 (1995) https://doi.org/10.1116/1.579466

Abstract

View articletitled, X‐ray photoelectron spectroscopy study of submonolayer native oxides on HF‐treated Si surfaces

Open the PDF for in another window

An x‐ray photoelectron spectroscopy study of the interaction and chemical passivation of chemically etched (100) oriented Hg_1−xCd_xTe (x=0.226) utilizing chromium and aluminum

J. P. Williams; S. P. Wilks; R. H. Williams; H. A. Tarry

J. Vac. Sci. Technol. A 13, 2676–2683 (1995) https://doi.org/10.1116/1.579467

Abstract

View articletitled, An x‐ray photoelectron spectroscopy study of the interaction and chemical passivation of chemically etched (100) oriented Hg1−xCdxTe (x=0.226) utilizing chromium and aluminum

Open the PDF for in another window

Interface exciton luminescence: An indication of interface inhomogeneities in single GaAs/GaAlAs heterostructures

V. N. Bessolov; V. V. Evstropov; M. V. Lebedev

J. Vac. Sci. Technol. A 13, 2684–2688 (1995) https://doi.org/10.1116/1.579468

Abstract

View articletitled, Interface exciton luminescence: An indication of interface inhomogeneities in single GaAs/GaAlAs heterostructures

Open the PDF for in another window

Application of high‐resolution electron energy loss spectroscopy to the adsorption and the photoreaction of CH₂I₂ and CD₃OD on a MoO_x thin film

Hong He; Junji Nakamura; Naoki Takehiro; Ken‐ichi Tanaka

J. Vac. Sci. Technol. A 13, 2689–2697 (1995) https://doi.org/10.1116/1.579469

Abstract

View articletitled, Application of high‐resolution electron energy loss spectroscopy to the adsorption and the photoreaction of CH2I2 and CD3OD on a MoOx thin film

Open the PDF for in another window

In situ infrared spectroscopic study on the role of surface hydrides and fluorides in the silicon chemical vapor deposition process

Chan‐Hwa Chung; Sang Heup Moon; Shi‐Woo Rhee

J. Vac. Sci. Technol. A 13, 2698–2702 (1995) https://doi.org/10.1116/1.579470

Abstract

View articletitled, In situ infrared spectroscopic study on the role of surface hydrides and fluorides in the silicon chemical vapor deposition process

Open the PDF for in another window

Characterization of molecular beam epitaxy grown CdF₂ layers by x‐ray diffraction and CaF₂:Sm photoluminescence probe

N. S. Sokolov; N. N. Faleev; S. V. Gastev; N. L. Yakovlev; A. Izumi; K. Tsutsui

J. Vac. Sci. Technol. A 13, 2703–2708 (1995) https://doi.org/10.1116/1.579471

Abstract

View articletitled, Characterization of molecular beam epitaxy grown CdF2 layers by x‐ray diffraction and CaF2:Sm photoluminescence probe

Open the PDF for in another window

Thermal desorption spectroscopy study of HF/DF‐treated Si(100) surfaces

Keizo Kinoshita; Iwao Nishiyama

J. Vac. Sci. Technol. A 13, 2709–2714 (1995) https://doi.org/10.1116/1.579472

Abstract

View articletitled, Thermal desorption spectroscopy study of HF/DF‐treated Si(100) surfaces

Open the PDF for in another window

Modification of surface condition and irradiation effects of synchrotron radiation on photoexcited etching of SiC

Shingo Terakado; Masayoshi Ogura; Shigeo Suzuki; Masao Nakao; Kenichiro Tanaka

J. Vac. Sci. Technol. A 13, 2715–2720 (1995) https://doi.org/10.1116/1.579473

Abstract

View articletitled, Modification of surface condition and irradiation effects of synchrotron radiation on photoexcited etching of SiC

Open the PDF for in another window

Study of electron‐beam effects on trimethylsilane covered Si(100)

M. V. Ascherl; J. H. Campbell; J. Lozano; J. H. Craig, Jr.

J. Vac. Sci. Technol. A 13, 2721–2725 (1995) https://doi.org/10.1116/1.579474

Abstract

View articletitled, Study of electron‐beam effects on trimethylsilane covered Si(100)

Open the PDF for in another window

Thermogravimetric analysis of selected condensed materials on a quartz crystal microbalance

Terry E. Phillips; C. Brent Bargeron; Richard C. Benson

J. Vac. Sci. Technol. A 13, 2726–2731 (1995) https://doi.org/10.1116/1.579475

Abstract

View articletitled, Thermogravimetric analysis of selected condensed materials on a quartz crystal microbalance

Open the PDF for in another window

Microstructure and characterization of electron‐trapping stimulable phosphor SrS:(Eu,Sm) thin film on glass

T. J. Hsieh; R. Revay; D. Brower; P. H. Chi; D. S. Simons; D. E. Newbury; S. W. Robey

J. Vac. Sci. Technol. A 13, 2732–2738 (1995) https://doi.org/10.1116/1.579696

Abstract

View articletitled, Microstructure and characterization of electron‐trapping stimulable phosphor SrS:(Eu,Sm) thin film on glass

Open the PDF for in another window

New method to predict corrosion characteristics of Zn‐metallized thin films for film capacitors

J. G. Na

J. Vac. Sci. Technol. A 13, 2739–2741 (1995) https://doi.org/10.1116/1.579697

Abstract

View articletitled, New method to predict corrosion characteristics of Zn‐metallized thin films for film capacitors

Open the PDF for in another window

Origins of atmospheric contamination in amorphous silicon prepared by very high frequency (70 MHz) glow discharge

U. Kroll; J. Meier; H. Keppner; A. Shah; S. D. Littlewood; I. E. Kelly; P. Giannoulès

J. Vac. Sci. Technol. A 13, 2742–2746 (1995) https://doi.org/10.1116/1.579698

Abstract

View articletitled, Origins of atmospheric contamination in amorphous silicon prepared by very high frequency (70 MHz) glow discharge

Open the PDF for in another window

An actinometric study of C₂H₂ plasma polymerization and film properties

Rogério Pinto Mota; Tadashi Shiosawa; Steven Frederick Durrant; Mário Antônio Bica de Moraes

J. Vac. Sci. Technol. A 13, 2747–2752 (1995) https://doi.org/10.1116/1.579699

Abstract

View articletitled, An actinometric study of C2H2 plasma polymerization and film properties

Open the PDF for in another window

In situ measurements of the recombination at the crystalline silicon/amorphous silicon heterointerface by time resolved microwave conductivity measurements during low temperature annealing and silane plasma exposure

H. C. Neitzert; M. Kunst

J. Vac. Sci. Technol. A 13, 2753–2757 (1995) https://doi.org/10.1116/1.579700

Abstract

View articletitled, In situ measurements of the recombination at the crystalline silicon/amorphous silicon heterointerface by time resolved microwave conductivity measurements during low temperature annealing and silane plasma exposure

Open the PDF for in another window

Change in refractive index and in chemical state of electron beam irradiated fluorinated polyimide films

Yasuko Yamada Maruo; Shigekuni Sasaki; Toshiaki Tamamura

J. Vac. Sci. Technol. A 13, 2758–2763 (1995) https://doi.org/10.1116/1.579701

Abstract

View articletitled, Change in refractive index and in chemical state of electron beam irradiated fluorinated polyimide films

Open the PDF for in another window

Structural investigation of monolayer Sb on Si(100)‐2×1 utilizing a Monte Carlo simulation of channeling and channeled ion energy loss

M. A. Boshart; A. A. Bailes, III; A. Dygo; L. E. Seiberling

J. Vac. Sci. Technol. A 13, 2764–2771 (1995) https://doi.org/10.1116/1.579702

Abstract

View articletitled, Structural investigation of monolayer Sb on Si(100)‐2×1 utilizing a Monte Carlo simulation of channeling and channeled ion energy loss

Open the PDF for in another window

Chemical reactions of triethylantimony on GaAs(100)

John M. Heitzinger; J. G. Ekerdt

J. Vac. Sci. Technol. A 13, 2772–2780 (1995) https://doi.org/10.1116/1.579703

Abstract

View articletitled, Chemical reactions of triethylantimony on GaAs(100)

Open the PDF for in another window

Methane adsorption and hydrogen isothermal desorption kinetics on a C(001)–(1×1) surface

Toshihiko Nishimori; Hitoshi Sakamoto; Yuji Takakuwa; Shozo Kono

J. Vac. Sci. Technol. A 13, 2781–2786 (1995) https://doi.org/10.1116/1.579704

Abstract

View articletitled, Methane adsorption and hydrogen isothermal desorption kinetics on a C(001)–(1×1) surface

Open the PDF for in another window

Laterally resolved measurements of cesium iodide quantum yield

Tiziana dell’Orto; J. Almeida; C. Coluzza; E. Conforto; Gelsomina De Stasio; G. Margaritondo; G. Paic; A. Braem; F. Piuz; B. P. Tonner

J. Vac. Sci. Technol. A 13, 2787–2790 (1995) https://doi.org/10.1116/1.579705

Abstract

View articletitled, Laterally resolved measurements of cesium iodide quantum yield

Open the PDF for in another window

Modeling the pump‐down of a reversibly adsorbed phase. II. Multilayer coverage

P. A. Redhead

J. Vac. Sci. Technol. A 13, 2791–2796 (1995) https://doi.org/10.1116/1.579706

Abstract

View articletitled, Modeling the pump‐down of a reversibly adsorbed phase. II. Multilayer coverage

Open the PDF for in another window

Phosphorus impurities in Mg_xZn_1−xTe alloys

F. El Akkad; M. Abdel Naby; M. Ali Omar

J. Vac. Sci. Technol. A 13, 2797–2802 (1995) https://doi.org/10.1116/1.579707

Abstract

View articletitled, Phosphorus impurities in MgxZn1−xTe alloys

Open the PDF for in another window

Effect of the composition and anion vacancies in the band gap and band levels of Cu–In–Se–Te thin films

R. Díaz; M. León

J. Vac. Sci. Technol. A 13, 2803–2807 (1995) https://doi.org/10.1116/1.579708

Abstract

View articletitled, Effect of the composition and anion vacancies in the band gap and band levels of Cu–In–Se–Te thin films

Open the PDF for in another window

Effects of nitrogen pressure and ion flux on the properties of direct current reactive magnetron sputtered Zr–N films

Shozo Inoue; Kikuo Tominaga; Ronald P. Howson; Kazuya Kusaka

J. Vac. Sci. Technol. A 13, 2808–2813 (1995) https://doi.org/10.1116/1.579709

Abstract

View articletitled, Effects of nitrogen pressure and ion flux on the properties of direct current reactive magnetron sputtered Zr–N films

Open the PDF for in another window

Effect of N⁺₂ ion bombardment on the compositional change and residual stress of AlN film synthesized by ion beam assisted deposition

Ig‐Hyeon Kim; Seon‐Hyo Kim

J. Vac. Sci. Technol. A 13, 2814–2818 (1995) https://doi.org/10.1116/1.579710

Abstract

View articletitled, Effect of N+2 ion bombardment on the compositional change and residual stress of AlN film synthesized by ion beam assisted deposition

Open the PDF for in another window

X‐ray photoelectron spectroscopy study of the difference between reactively evaporated and direct sputter‐deposited TiN films and their oxidation properties

P. Prieto; R. E. Kirby

J. Vac. Sci. Technol. A 13, 2819–2826 (1995) https://doi.org/10.1116/1.579711

Abstract

View articletitled, X‐ray photoelectron spectroscopy study of the difference between reactively evaporated and direct sputter‐deposited TiN films and their oxidation properties

Open the PDF for in another window

Ion beam assisted deposition of Al films on Si

A. Terrasi; S. Ravesi; C. Marcellino; C. Spinella; S. Pannitteri

J. Vac. Sci. Technol. A 13, 2827–2831 (1995) https://doi.org/10.1116/1.579712

Abstract

View articletitled, Ion beam assisted deposition of Al films on Si

Open the PDF for in another window

Origin of intrinsic stress in Y₂O₃ films deposited by reactive sputtering

H. M. Choi; S. K. Choi

J. Vac. Sci. Technol. A 13, 2832–2835 (1995) https://doi.org/10.1116/1.579713

Abstract

View articletitled, Origin of intrinsic stress in Y2O3 films deposited by reactive sputtering

Open the PDF for in another window

Low‐energy (5<E_i<100 eV), high‐brightness, ultrahigh vacuum ion source for primary ion beam deposition: Applications for Al and Ge

Y.‐W. Kim; I. Petrov; H. Ito; J. E. Greene

J. Vac. Sci. Technol. A 13, 2836–2842 (1995) https://doi.org/10.1116/1.579714

Abstract

View articletitled, Low‐energy (5<Ei<100 eV), high‐brightness, ultrahigh vacuum ion source for primary ion beam deposition: Applications for Al and Ge

Open the PDF for in another window

Preparation of cubic boron nitride films by radio frequency bias sputtering

Osamu Tsuda; Yukiko Yamada; Tsuyoshi Fujii; Toyonobu Yoshida

J. Vac. Sci. Technol. A 13, 2843–2847 (1995) https://doi.org/10.1116/1.579715

Abstract

View articletitled, Preparation of cubic boron nitride films by radio frequency bias sputtering

Open the PDF for in another window

Mass and energy selected ion beam for deposition and ion induced surface modifications

O. M. Küttel; P. Groening; R. G. Agostino; L. Schlapbach

J. Vac. Sci. Technol. A 13, 2848–2855 (1995) https://doi.org/10.1116/1.579610

Abstract

View articletitled, Mass and energy selected ion beam for deposition and ion induced surface modifications

Open the PDF for in another window

Effect of substrate bias on the properties of diamondlike carbon films deposited using unbalanced magnetron sputtering

Soon‐Cheon Seo; David C. Ingram; Hugh H. Richardson

J. Vac. Sci. Technol. A 13, 2856–2862 (1995) https://doi.org/10.1116/1.579604

Abstract

View articletitled, Effect of substrate bias on the properties of diamondlike carbon films deposited using unbalanced magnetron sputtering

Open the PDF for in another window

Chemical vapor deposition of aluminum from dimethylaluminumhydride (DMAH): Characteristics of DMAH vaporization and Al growth kinetics

Eiichi Kondoh; Tomohiro Ohta

J. Vac. Sci. Technol. A 13, 2863–2871 (1995) https://doi.org/10.1116/1.579605

Abstract

View articletitled, Chemical vapor deposition of aluminum from dimethylaluminumhydride (DMAH): Characteristics of DMAH vaporization and Al growth kinetics

Open the PDF for in another window

Deposition and properties of Mo–N films

Kwang‐Lung Lin; Yu‐Jin Ho

J. Vac. Sci. Technol. A 13, 2872–2876 (1995) https://doi.org/10.1116/1.579606

Abstract

View articletitled, Deposition and properties of Mo–N films

Open the PDF for in another window

Investigation of polycrystalline CdTe thin films deposited by physical vapor deposition, close‐spaced sublimation, and sputtering

H. R. Moutinho; F. S. Hasoon; F. Abulfotuh; L. L. Kazmerski

J. Vac. Sci. Technol. A 13, 2877–2883 (1995) https://doi.org/10.1116/1.579607

Abstract

View articletitled, Investigation of polycrystalline CdTe thin films deposited by physical vapor deposition, close‐spaced sublimation, and sputtering

Open the PDF for in another window

Effects of atomic chlorine wall recombination: Comparison of a plasma chemistry model with experiment

E. Meeks; J. W. Shon; Y. Ra; P. Jones

J. Vac. Sci. Technol. A 13, 2884–2889 (1995) https://doi.org/10.1116/1.579608

Abstract

View articletitled, Effects of atomic chlorine wall recombination: Comparison of a plasma chemistry model with experiment

Open the PDF for in another window

Power required to maintain an electron in a discharge: Its use as a reference parameter in magnetized high frequency plasmas

J. Margot; M. Moisan; M. Fortin

J. Vac. Sci. Technol. A 13, 2890–2899 (1995) https://doi.org/10.1116/1.579611

Abstract

View articletitled, Power required to maintain an electron in a discharge: Its use as a reference parameter in magnetized high frequency plasmas

Open the PDF for in another window

Low temperature deposition of silicon nitride films by distributed electron cyclotron resonance plasma‐enhanced chemical vapor deposition

S. Sitbon; M. C. Hugon; B. Agius; F. Abel; J. L. Courant; M. Puech

J. Vac. Sci. Technol. A 13, 2900–2907 (1995) https://doi.org/10.1116/1.579609

Abstract

View articletitled, Low temperature deposition of silicon nitride films by distributed electron cyclotron resonance plasma‐enhanced chemical vapor deposition

Open the PDF for in another window

Heating uniformity of a microwave discharge plasma to redistribute a solid fuel layer inside a cryogenic target for inertial confinement fusion

C. M. Chen; T. Norimatsu; Y. Izawa; T. Yamanaka; S. Nakai

J. Vac. Sci. Technol. A 13, 2908–2913 (1995) https://doi.org/10.1116/1.579612

Abstract

View articletitled, Heating uniformity of a microwave discharge plasma to redistribute a solid fuel layer inside a cryogenic target for inertial confinement fusion

Open the PDF for in another window

Plasma chemical vapor deposition and properties of hard C₃N₄ thin films

S. Vepr̆ek; J. Weidmann; F. Glatz

J. Vac. Sci. Technol. A 13, 2914–2919 (1995) https://doi.org/10.1116/1.579613

Abstract

View articletitled, Plasma chemical vapor deposition and properties of hard C3N4 thin films

Open the PDF for in another window

Automated Langmuir probe characterization of methane/hydrogen low‐pressure radio frequency discharges in a production reactor

F. A. Cali; P. A. F. Herbert; W. M. Kelly

J. Vac. Sci. Technol. A 13, 2920–2923 (1995) https://doi.org/10.1116/1.579614

Abstract

View articletitled, Automated Langmuir probe characterization of methane/hydrogen low‐pressure radio frequency discharges in a production reactor

Open the PDF for in another window

High rate–low temperature deposition of silicon dioxide films by remote plasma enhanced chemical vapor deposition using silicon tetrachloride

J. C. Alonso; S. J. Ramírez; M. García; A. Ortiz

J. Vac. Sci. Technol. A 13, 2924–2929 (1995) https://doi.org/10.1116/1.579615

Abstract

View articletitled, High rate–low temperature deposition of silicon dioxide films by remote plasma enhanced chemical vapor deposition using silicon tetrachloride

Open the PDF for in another window

Measurement of the amount of oxygen generated by quartz source walls in a SF₆ dense plasma: Application to a helicon reactor

R. Petri; N. Sadeghi; D. Henry

J. Vac. Sci. Technol. A 13, 2930–2934 (1995) https://doi.org/10.1116/1.579616

Abstract

View articletitled, Measurement of the amount of oxygen generated by quartz source walls in a SF6 dense plasma: Application to a helicon reactor

Open the PDF for in another window

Thermal desorption spectroscopic analysis for residual chlorine on Al–Si–Cu after Cl₂ electron cyclotron resonance plasma etching

Yuden Teraoka; Hidemitsu Aoki; Iwao Nishiyama; Eiji Ikawa; Takamaro Kikkawa

J. Vac. Sci. Technol. A 13, 2935–2938 (1995) https://doi.org/10.1116/1.579617

Abstract

View articletitled, Thermal desorption spectroscopic analysis for residual chlorine on Al–Si–Cu after Cl2 electron cyclotron resonance plasma etching

Open the PDF for in another window

Fluid simulations of particle contamination in postplasma processes

M. P. Garrity; T. W. Peterson; L. M. Garrett; J. F. O’Hanlon

J. Vac. Sci. Technol. A 13, 2939–2944 (1995) https://doi.org/10.1116/1.579618

Abstract

View articletitled, Fluid simulations of particle contamination in postplasma processes

Open the PDF for in another window

Time‐resolved Fourier transform infrared emission as a plasma diagnostic

G. Hancock; J. P. Sucksmith

J. Vac. Sci. Technol. A 13, 2945–2949 (1995) https://doi.org/10.1116/1.579619

Abstract

View articletitled, Time‐resolved Fourier transform infrared emission as a plasma diagnostic

Open the PDF for in another window

Postplasma particle dynamics in a Gaseous Electronics Conference RF Reference Cell

S. M. Collins; D. A. Brown; J. F. O’Hanlon; R. N. Carlile

J. Vac. Sci. Technol. A 13, 2950–2953 (1995) https://doi.org/10.1116/1.579620

Abstract

View articletitled, Postplasma particle dynamics in a Gaseous Electronics Conference RF Reference Cell

Open the PDF for in another window

General geometry calculations of one‐stage molecular flow transmission probabilities for turbomolecular pumps

S. Katsimichas; A. J. H. Goddard; R. Lewington; C. R. E. de Oliveira

J. Vac. Sci. Technol. A 13, 2954–2961 (1995) https://doi.org/10.1116/1.579621

Abstract

View articletitled, General geometry calculations of one‐stage molecular flow transmission probabilities for turbomolecular pumps

Open the PDF for in another window

Multicomponent vapor transport model for viscous, transitional, and molecular flow

Michael J. Ernst; Harold F. Hemond

J. Vac. Sci. Technol. A 13, 2962–2971 (1995) https://doi.org/10.1116/1.579622

Abstract

View articletitled, Multicomponent vapor transport model for viscous, transitional, and molecular flow

Open the PDF for in another window

High performance Pirani vacuum gauge

Jin‐Shown Shie; Bruce C. S. Chou; Yeong‐Maw Chen

J. Vac. Sci. Technol. A 13, 2972–2979 (1995) https://doi.org/10.1116/1.579623

Abstract

View articletitled, High performance Pirani vacuum gauge

Open the PDF for in another window

Miniaturized thin film thermal vacuum sensor

W. J. Alvesteffer; D. C. Jacobs; D. H. Baker

J. Vac. Sci. Technol. A 13, 2980–2985 (1995) https://doi.org/10.1116/1.579624

Abstract

View articletitled, Miniaturized thin film thermal vacuum sensor

Open the PDF for in another window

Plasma source ion nitriding: A new low temperature, low‐pressure nitriding approach

M. K. Lei; Z. L. Zhang

J. Vac. Sci. Technol. A 13, 2986–2990 (1995) https://doi.org/10.1116/1.579625

Abstract

View articletitled, Plasma source ion nitriding: A new low temperature, low‐pressure nitriding approach

Open the PDF for in another window

First thin film realization of a helicoidal bianisotropic medium

Kevin Robbie; Michael J. Brett; Akhlesh Lakhtakia

J. Vac. Sci. Technol. A 13, 2991–2993 (1995) https://doi.org/10.1116/1.579626

View articletitled, First thin film realization of a helicoidal bianisotropic medium

Open the PDF for in another window

Large grain size CdTe films grown on glass substrates at low temperature

M. Zapata‐Torres; R. Castro‐Rodríguez; A. Zapata‐Navarro; John L. Wallace; Ramón Pomes; J. L. Peña; M. H. Farías

J. Vac. Sci. Technol. A 13, 2994–2996 (1995) https://doi.org/10.1116/1.579627

Abstract

View articletitled, Large grain size CdTe films grown on glass substrates at low temperature

Open the PDF for in another window

Effect of substrate heating and high energy heavy ion irradiation on the performance of Cr films

Sangeeta Srivastav; Amitabh Jain

J. Vac. Sci. Technol. A 13, 2997–2999 (1995) https://doi.org/10.1116/1.579628

View articletitled, Effect of substrate heating and high energy heavy ion irradiation on the performance of Cr films

Open the PDF for in another window

Al–Mg alloy from a beer can as a simple source of Mg metal for evaporators in ultrahigh vacuum applications

F. J. Esposto; C. Cory; K. Griffiths; P. R. Norton; R. S. Timsit

J. Vac. Sci. Technol. A 13, 3000–3002 (1995) https://doi.org/10.1116/1.579629

View articletitled, Al–Mg alloy from a beer can as a simple source of Mg metal for evaporators in ultrahigh vacuum applications

Open the PDF for in another window

Use of an inexpensive solid state differential sensor as a 0–35 mbar pressure gauge

Marc Fleury; Louis D. Smullin

J. Vac. Sci. Technol. A 13, 3003 (1995) https://doi.org/10.1116/1.579630

Abstract

View articletitled, Use of an inexpensive solid state differential sensor as a 0–35 mbar pressure gauge

Open the PDF for in another window

Issues

RSS

Resources

Explore

pubs.aip.org

Connect with AIP Publishing

This Feature Is Available To Subscribers Only