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Molecular beam epitaxy of GaN(0001) utilizing NH₃ and/or NH⁺_x ions: Growth kinetics and defect structure

N.‐E. Lee; R. C. Powell; Y.‐W. Kim; J. E. Greene

J. Vac. Sci. Technol. A 13, 2293–2302 (1995) https://doi.org/10.1116/1.579512

View articletitled, Molecular beam epitaxy of GaN(0001) utilizing NH3 and/or NH+x ions: Growth kinetics and defect structure

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Preparation and properties of Ti(Y)N coatings

Zhiming Yu; Zhujin Jin; Changqing Liu; Li Yu; Shaoxia Dai

J. Vac. Sci. Technol. A 13, 2303–2309 (1995) https://doi.org/10.1116/1.579513

Abstract

View articletitled, Preparation and properties of Ti(Y)N coatings

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Comprehensive interpretation of the preferred orientation of vapor‐phase grown polycrystalline silicon films

Hiroaki Kakinuma

J. Vac. Sci. Technol. A 13, 2310–2317 (1995) https://doi.org/10.1116/1.579514

Abstract

View articletitled, Comprehensive interpretation of the preferred orientation of vapor‐phase grown polycrystalline silicon films

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Effect of substrate temperature on the deposition of polytetrafluoroethylene by an ionization‐assisted evaporation method

H. Usui; H. Koshikawa; K. Tanaka

J. Vac. Sci. Technol. A 13, 2318–2324 (1995) https://doi.org/10.1116/1.579515

Abstract

View articletitled, Effect of substrate temperature on the deposition of polytetrafluoroethylene by an ionization‐assisted evaporation method

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Manifold arsenic and phosphorus effusion source for GaAsP alloys

C. E. C. Wood; F. G. Johnson; S. A. Tabatabaei

J. Vac. Sci. Technol. A 13, 2325–2327 (1995) https://doi.org/10.1116/1.579516

Abstract

View articletitled, Manifold arsenic and phosphorus effusion source for GaAsP alloys

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Study of titanium–nitrogen films deposited in an electron beam evaporation unit

J. D. Brown; M. R. Govers

J. Vac. Sci. Technol. A 13, 2328–2335 (1995) https://doi.org/10.1116/1.579517

Abstract

View articletitled, Study of titanium–nitrogen films deposited in an electron beam evaporation unit

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Growth of ternary alloy Si_1−x−yGe_xC_y by rapid thermal chemical vapor deposition

S. Bodnar; J. L. Regolini

J. Vac. Sci. Technol. A 13, 2336–2340 (1995) https://doi.org/10.1116/1.579518

Abstract

View articletitled, Growth of ternary alloy Si1−x−yGexCy by rapid thermal chemical vapor deposition

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Structure of stacking fault pyramids in silicon‐on‐insulator material

M. E. Twigg

J. Vac. Sci. Technol. A 13, 2341–2347 (1995) https://doi.org/10.1116/1.579519

Abstract

View articletitled, Structure of stacking fault pyramids in silicon‐on‐insulator material

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Real‐time monitoring of the deposition and growth of thin organic films by in situ ellipsometry

J. F. Wall; E. Clauberg; R. W. Murray; E. A. Irene

J. Vac. Sci. Technol. A 13, 2348–2354 (1995) https://doi.org/10.1116/1.579520

Abstract

View articletitled, Real‐time monitoring of the deposition and growth of thin organic films by in situ ellipsometry

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Investigation of SiO₂ plasma enhanced chemical vapor deposition through tetraethoxysilane using attenuated total reflection Fourier transform infrared spectroscopy

Shashank C. Deshmukh; Eray S. Aydil

J. Vac. Sci. Technol. A 13, 2355–2367 (1995) https://doi.org/10.1116/1.579521

Abstract

View articletitled, Investigation of SiO2 plasma enhanced chemical vapor deposition through tetraethoxysilane using attenuated total reflection Fourier transform infrared spectroscopy

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Reflectance anisotropy spectroscopy: A probe for surface chemistry on Na₂S‐passivated and (NH₄)₂S‐passivated (001) GaAs

D. Paget; V. L. Berkovits; A. O. Gusev

J. Vac. Sci. Technol. A 13, 2368–2377 (1995) https://doi.org/10.1116/1.579476

Abstract

View articletitled, Reflectance anisotropy spectroscopy: A probe for surface chemistry on Na2S‐passivated and (NH4)2S‐passivated (001) GaAs

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Study of the optical constants determination of thin films: Dependence on theoretical assumptions

R. M. Bueno; J. F. Trigo; J. M. Martínez‐Duart; E. Elizalde; J. M. Sanz

J. Vac. Sci. Technol. A 13, 2378–2383 (1995) https://doi.org/10.1116/1.579477

Abstract

View articletitled, Study of the optical constants determination of thin films: Dependence on theoretical assumptions

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Quantitative determination of titanium nitride films by high energy resolution Auger electron spectroscopy

Qing Yu Zhang

J. Vac. Sci. Technol. A 13, 2384–2389 (1995) https://doi.org/10.1116/1.579478

Abstract

View articletitled, Quantitative determination of titanium nitride films by high energy resolution Auger electron spectroscopy

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Stresses in a coated solid due to shear and normal boundary tractions

Lanshi Zheng; S. Ramalingam

J. Vac. Sci. Technol. A 13, 2390–2398 (1995) https://doi.org/10.1116/1.579479

Abstract

View articletitled, Stresses in a coated solid due to shear and normal boundary tractions

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Thermal annealing of the epitaxial Al/Si(111)7×7 interface: Al clustering, interfacial reaction, and Al‐induced p⁺ doping

H. J. Wen; M. Dähne‐Prietsch; A. Bauer; M. T. Cuberes; I. Manke; G. Kaindl

J. Vac. Sci. Technol. A 13, 2399–2406 (1995) https://doi.org/10.1116/1.579480

Abstract

View articletitled, Thermal annealing of the epitaxial Al/Si(111)7×7 interface: Al clustering, interfacial reaction, and Al‐induced p+ doping

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Electric states of segregated metal atom on metal surfaces and potential use for field emitter

Michiko Yoshitake; Kazuhiro Yoshihara

J. Vac. Sci. Technol. A 13, 2407–2411 (1995) https://doi.org/10.1116/1.579481

Abstract

View articletitled, Electric states of segregated metal atom on metal surfaces and potential use for field emitter

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Pressure effect on YBa₂Cu₃O₇ thin film growth in off‐axis radio frequency magnetron sputtering

S. C. Wu; W. C. Tsai; C. K. Huang; H. T. Hsu; C. J. Huang; T. Y. Tseng

J. Vac. Sci. Technol. A 13, 2412–2419 (1995) https://doi.org/10.1116/1.579482

Abstract

View articletitled, Pressure effect on YBa2Cu3O7 thin film growth in off‐axis radio frequency magnetron sputtering

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Radio frequency electric‐mirror sputtering deposition

Morito Matsuoka; Shun‐ichi Tohno

J. Vac. Sci. Technol. A 13, 2420–2426 (1995) https://doi.org/10.1116/1.579483

Abstract

View articletitled, Radio frequency electric‐mirror sputtering deposition

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Oxide film deposition by radio frequency sputtering with electron cyclotron resonance plasma stimulation

Morito Matsuoka; Shun‐ichi Tohno

J. Vac. Sci. Technol. A 13, 2427–2434 (1995) https://doi.org/10.1116/1.579484

Abstract

View articletitled, Oxide film deposition by radio frequency sputtering with electron cyclotron resonance plasma stimulation

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Angular distribution of sputtered neutrals in a post magnetron geometry: Measurement and Monte Carlo simulation

C. Eisenmenger‐Sittner; R. Beyerknecht; A. Bergauer; W. Bauer; G. Betz

J. Vac. Sci. Technol. A 13, 2435–2443 (1995) https://doi.org/10.1116/1.579485

Abstract

View articletitled, Angular distribution of sputtered neutrals in a post magnetron geometry: Measurement and Monte Carlo simulation

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Study of microdroplet generation from vacuum arcs on graphite cathodes

Munther Kandah; Jean‐Luc Meunier

J. Vac. Sci. Technol. A 13, 2444–2450 (1995) https://doi.org/10.1116/1.579486

Abstract

View articletitled, Study of microdroplet generation from vacuum arcs on graphite cathodes

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Synchrotron‐radiation‐excited etching and total electron yield measurement of silicon and silicon nitride

Osamu Kitamura; Shingo Terakado; Shigeo Suzuki; Masao Nakao; Tetsuji Sekitani; Kenichiro Tanaka

J. Vac. Sci. Technol. A 13, 2451–2455 (1995) https://doi.org/10.1116/1.579487

Abstract

View articletitled, Synchrotron‐radiation‐excited etching and total electron yield measurement of silicon and silicon nitride

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Simulations of real‐time control of two‐dimensional features in inductively coupled plasma sources for etching applications

P. L. G. Ventzek; N. Yamada; Y. Sakai; H. Tagashira; K. Kitamori

J. Vac. Sci. Technol. A 13, 2456–2463 (1995) https://doi.org/10.1116/1.579488

Abstract

View articletitled, Simulations of real‐time control of two‐dimensional features in inductively coupled plasma sources for etching applications

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Characterization at different aspect ratios (radius/length) of a radio frequency inductively coupled plasma source

P. N. Wainman; M. A. Lieberman; A. J. Lichtenberg; R. A. Stewart; C. Lee

J. Vac. Sci. Technol. A 13, 2464–2469 (1995) https://doi.org/10.1116/1.579489

Abstract

View articletitled, Characterization at different aspect ratios (radius/length) of a radio frequency inductively coupled plasma source

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Evaluation of the background signal for mass spectrometry under high ambient hydrogen pressures in plasma discharges

Y. Nakashima; K. Tsuchiya; K. Ohtoshi; M. Shoji; K. Yatsu; T. Tamano

J. Vac. Sci. Technol. A 13, 2470–2475 (1995) https://doi.org/10.1116/1.579490

Abstract

View articletitled, Evaluation of the background signal for mass spectrometry under high ambient hydrogen pressures in plasma discharges

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Helicon plasma source excited by a flat spiral coil

J. E. Stevens; M. J. Sowa; J. L. Cecchi

J. Vac. Sci. Technol. A 13, 2476–2482 (1995) https://doi.org/10.1116/1.579491

Abstract

View articletitled, Helicon plasma source excited by a flat spiral coil

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Silicon oxide deposition in an electron cyclotron resonance plasma with microwave spectroscopic monitoring of SiO

Kok Heng Chew; Jian Chen; R. Claude Woods; J. Leon Shohet

J. Vac. Sci. Technol. A 13, 2483–2489 (1995) https://doi.org/10.1116/1.579492

Abstract

View articletitled, Silicon oxide deposition in an electron cyclotron resonance plasma with microwave spectroscopic monitoring of SiO

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Plasma‐structure dependence of the growth mechanism of plasma‐polymerized fluorocarbon films with residual radicals

M. Horie

J. Vac. Sci. Technol. A 13, 2490–2497 (1995) https://doi.org/10.1116/1.579493

Abstract

View articletitled, Plasma‐structure dependence of the growth mechanism of plasma‐polymerized fluorocarbon films with residual radicals

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Spatially averaged (global) model of time modulated high density argon plasmas

Sumio Ashida; C. Lee; M. A. Lieberman

J. Vac. Sci. Technol. A 13, 2498–2507 (1995) https://doi.org/10.1116/1.579494

Abstract

View articletitled, Spatially averaged (global) model of time modulated high density argon plasmas

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Performance characteristics of an oxygen radical beam radio‐frequency source

Fumikazu Imai; Kimio Kunimori; Hisakazu Nozoye

J. Vac. Sci. Technol. A 13, 2508–2512 (1995) https://doi.org/10.1116/1.579495

Abstract

View articletitled, Performance characteristics of an oxygen radical beam radio‐frequency source

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Conventional and dynamic actinometry of discharges of hydrocarbon–oxygen–argon mixtures

Steven F. Durrant; Mário A. Bica de Moraes

J. Vac. Sci. Technol. A 13, 2513–2518 (1995) https://doi.org/10.1116/1.579496

Abstract

View articletitled, Conventional and dynamic actinometry of discharges of hydrocarbon–oxygen–argon mixtures

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Diamond‐like carbon films grown using a saddle field source

O. S. Panwar; D. Sarangi; Sushil Kumar; P. N. Dixit; R. Bhattacharyya

J. Vac. Sci. Technol. A 13, 2519–2524 (1995) https://doi.org/10.1116/1.579497

Abstract

View articletitled, Diamond‐like carbon films grown using a saddle field source

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Interface reaction of Al/W and chemical properties of Al–W bimetallic bonding

Mitsuo Tsukada; Shin‐ichi Ohfuji

J. Vac. Sci. Technol. A 13, 2525–2531 (1995) https://doi.org/10.1116/1.579498

Abstract

View articletitled, Interface reaction of Al/W and chemical properties of Al–W bimetallic bonding

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Adsorption of β‐radioactive ⁸Li on single crystal surfaces: Thermal desorption spectroscopy and nuclear magnetic resonance experiments

M. Detje; M. Röckelein; W. Preyss; H.‐D. Ebinger; H. J. Jänsch; H. Reich; R. Veith; W. Widdra; D. Fick

J. Vac. Sci. Technol. A 13, 2532–2539 (1995) https://doi.org/10.1116/1.579499

Abstract

View articletitled, Adsorption of β‐radioactive 8Li on single crystal surfaces: Thermal desorption spectroscopy and nuclear magnetic resonance experiments

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Reactivity of Ni on oxygen‐covered W(110) surfaces

J. E. Whitten; R. Gomer

J. Vac. Sci. Technol. A 13, 2540–2546 (1995) https://doi.org/10.1116/1.579500

Abstract

View articletitled, Reactivity of Ni on oxygen‐covered W(110) surfaces

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DIPLOMA: An experimental system to study MeV and keV particle‐ and photon‐induced desorption of molecules

G. Brinkmalm; P. Håkansson; J. Kjellberg; B. U. R. Sundqvist

J. Vac. Sci. Technol. A 13, 2547–2552 (1995) https://doi.org/10.1116/1.579501

Abstract

View articletitled, DIPLOMA: An experimental system to study MeV and keV particle‐ and photon‐induced desorption of molecules

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Radiation‐induced decomposition of PF₃ on Ru(0001)

H.‐S. Tao; U. Diebold; V. Chakarian; D. K. Shuh; J. A. Yarmoff; N. D. Shinn; T. E. Madey

J. Vac. Sci. Technol. A 13, 2553–2557 (1995) https://doi.org/10.1116/1.579502

Abstract

View articletitled, Radiation‐induced decomposition of PF3 on Ru(0001)

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Interaction of H₂O and Cl₂ on iron oxide surfaces

E. Murray; J. A. Kelber

J. Vac. Sci. Technol. A 13, 2558–2563 (1995) https://doi.org/10.1116/1.579503

Abstract

View articletitled, Interaction of H2O and Cl2 on iron oxide surfaces

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Hollow foam microshells for liquid‐layered cryogenic inertial confinement fusion targets

Diana Schroen‐Carey; George E. Overturf, III; Robert Reibold; Steven R. Buckley; Stephan A. Letts; Robert Cook

J. Vac. Sci. Technol. A 13, 2564–2568 (1995) https://doi.org/10.1116/1.579450

Abstract

View articletitled, Hollow foam microshells for liquid‐layered cryogenic inertial confinement fusion targets

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Low contamination ultrahigh vacuum system of the Synchrotron Radiation Research Center 1.3 GeV electron storage ring

G. Y. Hsiung; J. R. Huang; D. J. Wang; J. G. Shyy; J. C. Lee; R. J. Sheu; H. S. Tzeng; S. N. Hsu; S. Y. Perng; K. M. Hsiao; W. D. Wey; J. R. Chen; Y. C. Liu

J. Vac. Sci. Technol. A 13, 2569–2573 (1995) https://doi.org/10.1116/1.579451

Abstract

View articletitled, Low contamination ultrahigh vacuum system of the Synchrotron Radiation Research Center 1.3 GeV electron storage ring

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Residual current of the modified Lafferty gauge

Nobuaki Gotoh; Takashi Momose; Hajime Ishimaru; Ron Paitich

J. Vac. Sci. Technol. A 13, 2574–2578 (1995) https://doi.org/10.1116/1.579452

Abstract

View articletitled, Residual current of the modified Lafferty gauge

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Liquid helium cryopumps with low‐emissivity Al film coatings and low helium consumption

Nobuaki Gotoh; Takashi Momose; Hajime Ishimaru; M. P. Larin

J. Vac. Sci. Technol. A 13, 2579–2581 (1995) https://doi.org/10.1116/1.579453

Abstract

View articletitled, Liquid helium cryopumps with low‐emissivity Al film coatings and low helium consumption

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Long‐term stability of Bayard–Alpert gauge performance: Results obtained from repeated calibrations against the National Institute of Standards and Technology primary vacuum standard

A. R. Filippelli; P. J. Abbott

J. Vac. Sci. Technol. A 13, 2582–2586 (1995) https://doi.org/10.1116/1.579454

Abstract

View articletitled, Long‐term stability of Bayard–Alpert gauge performance: Results obtained from repeated calibrations against the National Institute of Standards and Technology primary vacuum standard

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Attaining an ultralow outgassing rate of 10⁻¹² Pa m³ s⁻¹ m⁻² from an oxygen‐free high conductivity copper chamber with beryllium–copper–alloy flanges

Fumio Watanabe; Yasuki Koyatsu; Hirofumi Miki

J. Vac. Sci. Technol. A 13, 2587–2591 (1995) https://doi.org/10.1116/1.579455

Abstract

View articletitled, Attaining an ultralow outgassing rate of 10−12 Pa m3 s−1 m−2 from an oxygen‐free high conductivity copper chamber with beryllium–copper–alloy flanges

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Transition gas flow in drag pumps and capillary leaks

John C. Helmer; Giampaolo Levi

J. Vac. Sci. Technol. A 13, 2592–2599 (1995) https://doi.org/10.1116/1.579456

Abstract

View articletitled, Transition gas flow in drag pumps and capillary leaks

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Modeling of reactive sputtering of compound films in the presence of bias sputtering

M. Wautelet; F. Debal; J. P. Dauchot; M. Hecq

J. Vac. Sci. Technol. A 13, 2600–2605 (1995) https://doi.org/10.1116/1.579457

Abstract

View articletitled, Modeling of reactive sputtering of compound films in the presence of bias sputtering

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Neuronal cells cultured on modified microelectronic device surfaces

Andreas Offenhäusser; Jürgen Rühe; Wolfgang Knoll

J. Vac. Sci. Technol. A 13, 2606–2612 (1995) https://doi.org/10.1116/1.579458

Abstract

View articletitled, Neuronal cells cultured on modified microelectronic device surfaces

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Protein–platelet and platelet–leukocyte interaction at materials in contact with human blood

Håkan Nygren; Magnus Braide; Christin Karlsson

J. Vac. Sci. Technol. A 13, 2613–2618 (1995) https://doi.org/10.1116/1.579459

Abstract

View articletitled, Protein–platelet and platelet–leukocyte interaction at materials in contact with human blood

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Bioreactivity of titanium implant alloys

Susan J. Kerber

J. Vac. Sci. Technol. A 13, 2619–2623 (1995) https://doi.org/10.1116/1.579460

Abstract

View articletitled, Bioreactivity of titanium implant alloys

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Surface spectroscopic characterization of TiNi nearly equiatomic shape memory alloys for implants

S. A. Shabalovskaya; J. W. Anderegg

J. Vac. Sci. Technol. A 13, 2624–2632 (1995) https://doi.org/10.1116/1.579461

Abstract

View articletitled, Surface spectroscopic characterization of TiNi nearly equiatomic shape memory alloys for implants

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Surface characterization of titanium implants

G. N. Raikar; J. C. Gregory; J. L. Ong; L. C. Lucas; J. E. Lemons; D. Kawahara; M. Nakamura

J. Vac. Sci. Technol. A 13, 2633–2637 (1995) https://doi.org/10.1116/1.579462

Abstract

View articletitled, Surface characterization of titanium implants

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Microfabricated metal and oxide fibers for biological applications

J. Gold; B. Nilsson; B. Kasemo

J. Vac. Sci. Technol. A 13, 2638–2643 (1995) https://doi.org/10.1116/1.579463

Abstract

View articletitled, Microfabricated metal and oxide fibers for biological applications

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