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Vacuum gauging with complementary metal–oxide–semiconductor microsensors

O. Paul; O. Brand; R. Lenggenhager; H. Baltes

J. Vac. Sci. Technol. A 13, 503–508 (1995) https://doi.org/10.1116/1.579774

Abstract

View articletitled, Vacuum gauging with complementary metal–oxide–semiconductor microsensors

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Optical method for low pressure measurements

I. Bello; S. Bederka; L. Haworth

J. Vac. Sci. Technol. A 13, 509–514 (1995) https://doi.org/10.1116/1.579775

Abstract

View articletitled, Optical method for low pressure measurements

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Surface analysis of carbon on ozone treated metals

T. Momose; Y. Maeda; K. Asano; H. Ishimaru

J. Vac. Sci. Technol. A 13, 515–519 (1995) https://doi.org/10.1116/1.579776

Abstract

View articletitled, Surface analysis of carbon on ozone treated metals

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Outgassing reduction of type 304 stainless steel by surface oxidation in air

Kenji Odaka; Shinjiro Ueda

J. Vac. Sci. Technol. A 13, 520–523 (1995) https://doi.org/10.1116/1.579777

Abstract

View articletitled, Outgassing reduction of type 304 stainless steel by surface oxidation in air

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Enhancement of hydrogen pumping by injecting fluorine into the exhaust system of turbomolecular pumps

N. Ogure; A. Shibata; K. Ono; N. Hayasaka; H. Okano; K. Okumura

J. Vac. Sci. Technol. A 13, 524–530 (1995) https://doi.org/10.1116/1.579778

Abstract

View articletitled, Enhancement of hydrogen pumping by injecting fluorine into the exhaust system of turbomolecular pumps

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Pumping behavior of ion pump elements at high and misaligned magnetic fields

H. C. Hseuh; W. S. Jiang; M. Mapes

J. Vac. Sci. Technol. A 13, 531–535 (1995) https://doi.org/10.1116/1.579779

Abstract

View articletitled, Pumping behavior of ion pump elements at high and misaligned magnetic fields

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Modeling of a multistage claw rotor vacuum pump

I. V. Ioffe; V. A. Koss; M. Gray; R. G. Livesey

J. Vac. Sci. Technol. A 13, 536–539 (1995) https://doi.org/10.1116/1.579780

Abstract

View articletitled, Modeling of a multistage claw rotor vacuum pump

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Vacuum characteristics of titanium

Michio Minato; Yoshio Itoh

J. Vac. Sci. Technol. A 13, 540–544 (1995) https://doi.org/10.1116/1.579781

Abstract

View articletitled, Vacuum characteristics of titanium

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Recombination limited outgassing of stainless steel

Boude C. Moore

J. Vac. Sci. Technol. A 13, 545–548 (1995) https://doi.org/10.1116/1.579782

Abstract

View articletitled, Recombination limited outgassing of stainless steel

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Theoretical submonolayer adsorption isotherms for hydrogen on a heterogeneous surface

J. P. Hobson

J. Vac. Sci. Technol. A 13, 549–550 (1995) https://doi.org/10.1116/1.579783

Abstract

View articletitled, Theoretical submonolayer adsorption isotherms for hydrogen on a heterogeneous surface

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Pumping characteristics of a cryopump with Ar sorbent in He and in a D₂/He mixture

M. M. Menon; G. J. Laughon; R. Maingi; M. R. Wade; D. L. Hillis; M. A. Mahdavi

J. Vac. Sci. Technol. A 13, 551–555 (1995) https://doi.org/10.1116/1.579784

Abstract

View articletitled, Pumping characteristics of a cryopump with Ar sorbent in He and in a D2/He mixture

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TiN thin film on stainless steel for extremely high vacuum material

K. Saito; S. Inayoshi; Y. Ikeda; Y. Yang; S. Tsukahara

J. Vac. Sci. Technol. A 13, 556–561 (1995) https://doi.org/10.1116/1.579785

Abstract

View articletitled, TiN thin film on stainless steel for extremely high vacuum material

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Secondary ion mass spectroscopy analysis for aluminum surfaces treated by glow discharge cleaning

J. R. Chen; G. Y. Hsiung; Y. C. Liu; W. H. Lee; C. C. Nee

J. Vac. Sci. Technol. A 13, 562–570 (1995) https://doi.org/10.1116/1.579786

Abstract

View articletitled, Secondary ion mass spectroscopy analysis for aluminum surfaces treated by glow discharge cleaning

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Reduction of outgassing rate by glow discharge cleaning

Minxu Li; H. F. Dylla

J. Vac. Sci. Technol. A 13, 571–575 (1995) https://doi.org/10.1116/1.579787

Abstract

View articletitled, Reduction of outgassing rate by glow discharge cleaning

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X‐ray photoelectron spectroscopy analysis of cleaning procedures for synchrotron radiation beamline materials at the Advanced Photon Source

Y. Li; D. Ryding; C. Liu; T. M. Kuzay; M. W. McDowell; R. A. Rosenberg

J. Vac. Sci. Technol. A 13, 576–580 (1995) https://doi.org/10.1116/1.579788

Abstract

View articletitled, X‐ray photoelectron spectroscopy analysis of cleaning procedures for synchrotron radiation beamline materials at the Advanced Photon Source

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Photon stimulated desorption measurements of extruded copper and of welded copper beam chambers for the PEP‐II asymmetric B factory

C. L. Foerster; C. Lanni; C. Perkins; M. Calderon; W. Barletta

J. Vac. Sci. Technol. A 13, 581–584 (1995) https://doi.org/10.1116/1.579789

Abstract

View articletitled, Photon stimulated desorption measurements of extruded copper and of welded copper beam chambers for the PEP‐II asymmetric B factory

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Photodesorption from a copper chamber with a broached inner surface

T. Kobari; M. Matumoto; N. Hirano; M. Katane; M. Matsuzaki; Y. Hori; M. Kobayashi; M. Nagai

J. Vac. Sci. Technol. A 13, 585–589 (1995) https://doi.org/10.1116/1.579790

Abstract

View articletitled, Photodesorption from a copper chamber with a broached inner surface

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Chemical vapor deposited TiCN: A new barrier metallization for submicron via and contact applications

M. Eizenberg; K. Littau; S. Ghanayem; M. Liao; R. Mosely; A. K. Sinha

J. Vac. Sci. Technol. A 13, 590–595 (1995) https://doi.org/10.1116/1.579791

Abstract

View articletitled, Chemical vapor deposited TiCN: A new barrier metallization for submicron via and contact applications

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Plasma enhanced chemical vapor deposition of TiO₂ in microwave‐radio frequency hybrid plasma reactor

Young H. Lee; Kevin K. Chan; Michael J. Brady

J. Vac. Sci. Technol. A 13, 596–601 (1995) https://doi.org/10.1116/1.579792

Abstract

View articletitled, Plasma enhanced chemical vapor deposition of TiO2 in microwave‐radio frequency hybrid plasma reactor

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Interface characterization of an InP/InGaAs resonant tunneling diode by scanning tunneling microscopy

W. Wu; S. L. Skala; J. R. Tucker; J. W. Lyding; A. Seabaugh; E. A. Beam, III; D. Jovanovic

J. Vac. Sci. Technol. A 13, 602–606 (1995) https://doi.org/10.1116/1.579793

Abstract

View articletitled, Interface characterization of an InP/InGaAs resonant tunneling diode by scanning tunneling microscopy

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Fourier transform infrared study of rapid thermal annealing of a‐Si:N:H(D) films prepared by remote plasma‐enhanced chemical vapor deposition

Z. Lu; P. Santos‐Filho; G. Stevens; M. J. Williams; G. Lucovsky

J. Vac. Sci. Technol. A 13, 607–613 (1995) https://doi.org/10.1116/1.579794

Abstract

View articletitled, Fourier transform infrared study of rapid thermal annealing of a‐Si:N:H(D) films prepared by remote plasma‐enhanced chemical vapor deposition

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Electrical transport properties of hot electrons at metal, insulator, and semiconductor interfaces

R. Ludeke; A. Bauer

J. Vac. Sci. Technol. A 13, 614–622 (1995) https://doi.org/10.1116/1.579795

Abstract

View articletitled, Electrical transport properties of hot electrons at metal, insulator, and semiconductor interfaces

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Epitaxial growth of a metal(CoSi₂)/insulator(CaF₂) nanometer‐thick heterostructure and its application to quantum‐effect devices

M. Asada; M. Watanabe; T. Suemasu; Y. Kohno; W. Saitoh

J. Vac. Sci. Technol. A 13, 623–628 (1995) https://doi.org/10.1116/1.579796

Abstract

View articletitled, Epitaxial growth of a metal(CoSi2)/insulator(CaF2) nanometer‐thick heterostructure and its application to quantum‐effect devices

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Optical waveguides on silicon chips

S. Yokoyama; T. Nagata; Y. Kuroda; T. Doi; T. Namba; K. Miyake; T. Miyamoto; S. Miyazaki; M. Koyanagi; M. Hirose

J. Vac. Sci. Technol. A 13, 629–635 (1995) https://doi.org/10.1116/1.579797

Abstract

View articletitled, Optical waveguides on silicon chips

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Si_1−xGe_x/Si multiple quantum wells on Si(100) and Si(110) for infrared absorption

T. L. Kreifels; R. L. Hengehold; Y. K. Yeo; P. E. Thompson; D. S. Simons

J. Vac. Sci. Technol. A 13, 636–641 (1995) https://doi.org/10.1116/1.579798

Abstract

View articletitled, Si1−xGex/Si multiple quantum wells on Si(100) and Si(110) for infrared absorption

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Silicon nitride encapsulation of sulfide passivated GaAs/AlGaAs microdisk lasers

W. S. Hobson; F. Ren; U. Mohideen; R. E. Slusher; M. Lamont Schnoes; S. J. Pearton

J. Vac. Sci. Technol. A 13, 642–645 (1995) https://doi.org/10.1116/1.579799

Abstract

View articletitled, Silicon nitride encapsulation of sulfide passivated GaAs/AlGaAs microdisk lasers

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Correlation of surface morphology with chemical structures of sulfur‐passivated GaAs(100) investigated by scanning tunneling microscopy and x‐ray photoelectron spectroscopy

Jeong Sook Ha; Seong‐Ju Park; Sung‐Bock Kim; El‐Hang Lee

J. Vac. Sci. Technol. A 13, 646–651 (1995) https://doi.org/10.1116/1.579800

Abstract

View articletitled, Correlation of surface morphology with chemical structures of sulfur‐passivated GaAs(100) investigated by scanning tunneling microscopy and x‐ray photoelectron spectroscopy

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Sulfide‐assisted reordering at the InP surface and SiN_x/InP interface

R. W. M. Kwok; G. Jin; B. K. L. So; K. C. Hui; L. Huang; W. M. Lau; C. C. Hsu; D. Landheer

J. Vac. Sci. Technol. A 13, 652–657 (1995) https://doi.org/10.1116/1.579801

Abstract

View articletitled, Sulfide‐assisted reordering at the InP surface and SiNx/InP interface

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Sputter deposition of yttria‐stabilized zirconia onto a porous Au substrate

A. F. Jankowski; J. P. Hayes

J. Vac. Sci. Technol. A 13, 658–661 (1995) https://doi.org/10.1116/1.579802

Abstract

View articletitled, Sputter deposition of yttria‐stabilized zirconia onto a porous Au substrate

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Sb ion implantation and annealing of SiGeC heteroepitaxial layers on Si(001)

R. Garcia; K. E. Daley; S. Sego; R. J. Culbertson; D. B. Poker

J. Vac. Sci. Technol. A 13, 662–665 (1995) https://doi.org/10.1116/1.579803

Abstract

View articletitled, Sb ion implantation and annealing of SiGeC heteroepitaxial layers on Si(001)

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Zincblende–CdSe on GaSb(110): Characterization of epitaxial growth and electronic structure

G. Neuhold; K. Horn; K. O. Magnusson; D. A. Evans

J. Vac. Sci. Technol. A 13, 666–671 (1995) https://doi.org/10.1116/1.579804

Abstract

View articletitled, Zincblende–CdSe on GaSb(110): Characterization of epitaxial growth and electronic structure

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Effect of substrate pretreatment on growth of GaN on (0001) sapphire by low pressure metalorganic chemical vapor deposition

C.‐Y. Hwang; M. J. Schurman; W. E. Mayo; Y. Li; Y. Lu; H. Liu; T. Salagaj; R. A. Stall

J. Vac. Sci. Technol. A 13, 672–675 (1995) https://doi.org/10.1116/1.579805

Abstract

View articletitled, Effect of substrate pretreatment on growth of GaN on (0001) sapphire by low pressure metalorganic chemical vapor deposition

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Conformality of SiO₂ films from tetraethoxysilane‐sourced remote microwave plasma‐enhanced chemical vapor deposition

Gregory B. Raupp; Dimitri A. Levedakis; Timothy S. Cale

J. Vac. Sci. Technol. A 13, 676–680 (1995) https://doi.org/10.1116/1.579806

Abstract

View articletitled, Conformality of SiO2 films from tetraethoxysilane‐sourced remote microwave plasma‐enhanced chemical vapor deposition

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Molecular beam epitaxy growth and characterizations of (Zn, Mg)(S,Se) epilayers for II–VI blue/green laser diodes

D. C. Grillo; M. D. Ringle; G. C. Hua; J. Han; R. L. Gunshor; A. V. Nurmikko

J. Vac. Sci. Technol. A 13, 681–682 (1995) https://doi.org/10.1116/1.579807

Abstract

View articletitled, Molecular beam epitaxy growth and characterizations of (Zn, Mg)(S,Se) epilayers for II–VI blue/green laser diodes

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Molecular beam epitaxial growth of ZnMgSSe and its application to blue and green laser diodes

M. Ikeda; A. Ishibashi; Y. Mori

J. Vac. Sci. Technol. A 13, 683–689 (1995) https://doi.org/10.1116/1.579808

Abstract

View articletitled, Molecular beam epitaxial growth of ZnMgSSe and its application to blue and green laser diodes

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Deep levels near ‘‘buried’’ ZnSe/GaAs(100) heterointerfaces

A. Raisanen; L. J. Brillson; L. Vanzetti; L. Sorba; A. Franciosi

J. Vac. Sci. Technol. A 13, 690–695 (1995) https://doi.org/10.1116/1.579809

Abstract

View articletitled, Deep levels near ‘‘buried’’ ZnSe/GaAs(100) heterointerfaces

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Heteroepitaxy of lattice‐matched compound semiconductors on silicon

Klaus J. Bachmann; Nikolaus Dietz; Amy E. Miller; David Venables; James T. Kelliher

J. Vac. Sci. Technol. A 13, 696–704 (1995) https://doi.org/10.1116/1.579810

Abstract

View articletitled, Heteroepitaxy of lattice‐matched compound semiconductors on silicon

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InGaN/AlGaN blue‐light‐emitting diodes

Shuji Nakamura

J. Vac. Sci. Technol. A 13, 705–710 (1995) https://doi.org/10.1116/1.579811

Abstract

View articletitled, InGaN/AlGaN blue‐light‐emitting diodes

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Deposition of AlN at lower temperatures by atmospheric metalorganic chemical vapor deposition using dimethylethylamine alane and ammonia

J. N. Kidder, Jr.; J. S. Kuo; A. Ludviksson; T. P. Pearsall; J. W. Rogers, Jr.; John M. Grant; Lynn R. Allen; Sheng Teng Hsu

J. Vac. Sci. Technol. A 13, 711–715 (1995) https://doi.org/10.1116/1.579812

Abstract

View articletitled, Deposition of AlN at lower temperatures by atmospheric metalorganic chemical vapor deposition using dimethylethylamine alane and ammonia

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Growth of In_xGa_1−xN and In_xAl_1−xN on GaAs metalorganic molecular beam epitaxy

C. R. Abernathy; J. D. MacKenzie; S. R. Bharatan; K. S. Jones; S. J. Pearton

J. Vac. Sci. Technol. A 13, 716–718 (1995) https://doi.org/10.1116/1.579813

Abstract

View articletitled, Growth of InxGa1−xN and InxAl1−xN on GaAs metalorganic molecular beam epitaxy

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Outdiffusion of deuterium from GaN, AlN, and InN

R. G. Wilson; S. J. Pearton; C. R. Abernathy; J. M. Zavada

J. Vac. Sci. Technol. A 13, 719–723 (1995) https://doi.org/10.1116/1.579814

Abstract

View articletitled, Outdiffusion of deuterium from GaN, AlN, and InN

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Magnetron reactive ion etching of AlN and InN in BCl₃ plasmas

G. F. McLane; L. Casas; R. T. Lareau; D. W. Eckart; C. B. Vartuli; S. J. Pearton; C. R. Abernathy

J. Vac. Sci. Technol. A 13, 724–726 (1995) https://doi.org/10.1116/1.579815

Abstract

View articletitled, Magnetron reactive ion etching of AlN and InN in BCl3 plasmas

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Ellipsometry for III–V epitaxial growth diagnostics

G. N. Maracas; C. H. Kuo; S. Anand; R. Droopad; G. R. L. Sohie; T. Levola

J. Vac. Sci. Technol. A 13, 727–732 (1995) https://doi.org/10.1116/1.579816

Abstract

View articletitled, Ellipsometry for III–V epitaxial growth diagnostics

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Real‐time monitoring of resonant‐tunneling diode growth using spectroscopic ellipsometry

F. G. Celii; Y.‐C. Kao; A. J. Katz; T. S. Moise

J. Vac. Sci. Technol. A 13, 733–739 (1995) https://doi.org/10.1116/1.579817

Abstract

View articletitled, Real‐time monitoring of resonant‐tunneling diode growth using spectroscopic ellipsometry

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Real‐time spectroscopic ellipsometry monitoring of Si_1−xGe_x/Si epitaxial growth

C. Pickering; D. A. O. Hope; R. T. Carline; D. J. Robbins

J. Vac. Sci. Technol. A 13, 740–744 (1995) https://doi.org/10.1116/1.579818

Abstract

View articletitled, Real‐time spectroscopic ellipsometry monitoring of Si1−xGex/Si epitaxial growth

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Observation of surface symmetry for Si/XeF₂ and Si/Cl₂ system using second‐harmonic generation

Satoshi Haraichi; Fumio Sasaki; Shunsuke Kobayashi; Masanori Komuro; Toshiro Tani

J. Vac. Sci. Technol. A 13, 745–749 (1995) https://doi.org/10.1116/1.579819

Abstract

View articletitled, Observation of surface symmetry for Si/XeF2 and Si/Cl2 system using second‐harmonic generation

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Effect of hydrogen annealing on second‐harmonic generation from SiO₂/Si(111) interfaces

Hiroyuki Hirayama; Fuminori Ito; Kohji Watanabe

J. Vac. Sci. Technol. A 13, 750–752 (1995) https://doi.org/10.1116/1.579820

Abstract

View articletitled, Effect of hydrogen annealing on second‐harmonic generation from SiO2/Si(111) interfaces

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Nanoscale structures in III–V semiconductors using sidewall masking and high ion density dry etching

F. Ren; S. J. Pearton; C. R. Abernathy; J. R. Lothian

J. Vac. Sci. Technol. A 13, 753–757 (1995) https://doi.org/10.1116/1.579821

Abstract

View articletitled, Nanoscale structures in III–V semiconductors using sidewall masking and high ion density dry etching

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Low resistivity ohmic contacts to moderately doped n‐GaAs with low‐temperature processing

Michael L. Lovejoy; Arnold J. Howard; Kevin R. Zavadil; Dennis J. Rieger; Randy J. Shul; Peter A. Barnes

J. Vac. Sci. Technol. A 13, 758–762 (1995) https://doi.org/10.1116/1.579822

Abstract

View articletitled, Low resistivity ohmic contacts to moderately doped n‐GaAs with low‐temperature processing

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Sensor for measuring the atomic fraction in highly dissociated hydrogen

W. L. Gardner

J. Vac. Sci. Technol. A 13, 763–766 (1995) https://doi.org/10.1116/1.579823

Abstract

View articletitled, Sensor for measuring the atomic fraction in highly dissociated hydrogen

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Oxidation and 6H‐SiC–SiO₂ interfaces

B. Hornetz; H.‐J. Michel; J. Halbritter

J. Vac. Sci. Technol. A 13, 767–771 (1995) https://doi.org/10.1116/1.579824

Abstract

View articletitled, Oxidation and 6H‐SiC–SiO2 interfaces

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Evolution of atomic‐scale roughening on Si(001)‐(2×1) surfaces resulting from high temperature oxidation

J. V. Seiple; J. P. Pelz

J. Vac. Sci. Technol. A 13, 772–776 (1995) https://doi.org/10.1116/1.579825

Abstract

View articletitled, Evolution of atomic‐scale roughening on Si(001)‐(2×1) surfaces resulting from high temperature oxidation

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Atomically resolved scanning tunneling microscopy study of the adsorption and dissociation of methylchloride on Si(001)

Michael J. Bronikowski; Robert J. Hamers

J. Vac. Sci. Technol. A 13, 777–781 (1995) https://doi.org/10.1116/1.579826

Abstract

View articletitled, Atomically resolved scanning tunneling microscopy study of the adsorption and dissociation of methylchloride on Si(001)

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Roughness in Si_1−xGe_x/Si superlattices: Growth temperature dependence

R. L. Headrick; J.‐M. Baribeau

J. Vac. Sci. Technol. A 13, 782–786 (1995) https://doi.org/10.1116/1.579827

Abstract

View articletitled, Roughness in Si1−xGex/Si superlattices: Growth temperature dependence

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Buffer layer–modulation‐doped field‐effect‐transistor interactions in the Al_0.33Ga_0.67As/GaAs superlattice system

J. G. Pellegrino; C. A. Richter; J. A. Dura; P. M. Amirtharaj; S. B. Qadri; B. Roughani

J. Vac. Sci. Technol. A 13, 787–791 (1995) https://doi.org/10.1116/1.579828

Abstract

View articletitled, Buffer layer–modulation‐doped field‐effect‐transistor interactions in the Al0.33Ga0.67As/GaAs superlattice system

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Interfacial properties of metal–insulator–semiconductor capacitors on GaAs(110)

L. J. Huang; K. Rajesh; W. M. Lau; S. Ingrey; D. Landheer; J.‐P. Noël; Z. H. Lu

J. Vac. Sci. Technol. A 13, 792–796 (1995) https://doi.org/10.1116/1.579829

Abstract

View articletitled, Interfacial properties of metal–insulator–semiconductor capacitors on GaAs(110)

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The correlation between selective oxide etching and thermodynamic prediction

S. C. McNevin

J. Vac. Sci. Technol. A 13, 797–800 (1995) https://doi.org/10.1116/1.579830

Abstract

View articletitled, The correlation between selective oxide etching and thermodynamic prediction

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High rate and highly selective SiO₂ etching employing inductively coupled plasma and discussion on reaction kinetics

Yasuhiro Horiike; Kazuhiro Kubota; Haruo Shindo; Takayuki Fukasawa

J. Vac. Sci. Technol. A 13, 801–809 (1995) https://doi.org/10.1116/1.579831

Abstract

View articletitled, High rate and highly selective SiO2 etching employing inductively coupled plasma and discussion on reaction kinetics

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Tungsten etching using an electron cyclotron resonance plasma

T. Maruyama; N. Fujiwara; K. Shiozawa; M. Yoneda

J. Vac. Sci. Technol. A 13, 810–814 (1995) https://doi.org/10.1116/1.579832

Abstract

View articletitled, Tungsten etching using an electron cyclotron resonance plasma

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Application of electron cyclotron resonance plasma source to conductive film deposition

Masaru Shimada; Toshiro Ono; Hiroshi Nishimura; Seitaro Matsuo

J. Vac. Sci. Technol. A 13, 815–819 (1995) https://doi.org/10.1116/1.579833

Abstract

View articletitled, Application of electron cyclotron resonance plasma source to conductive film deposition

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Plasma‐enhanced chemical vapor deposition of silicon, germanium, and tin nitride thin films from metalorganic precursors

David M. Hoffman; Sri Prakash Rangarajan; Satish D. Athavale; Demetre J. Economou; Jia‐Rui Liu; Zongshuang Zheng; Wei‐Kan Chu

J. Vac. Sci. Technol. A 13, 820–825 (1995) https://doi.org/10.1116/1.579834

Abstract

View articletitled, Plasma‐enhanced chemical vapor deposition of silicon, germanium, and tin nitride thin films from metalorganic precursors

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Analysis of the oxygen contamination present in SiN_x films deposited by electron cyclotron resonance

S. García; J. M. Martin; M. Fernández; I. Mártil; G. González‐Diaz

J. Vac. Sci. Technol. A 13, 826–830 (1995) https://doi.org/10.1116/1.579835

Abstract

View articletitled, Analysis of the oxygen contamination present in SiNx films deposited by electron cyclotron resonance

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Synergistic sputtering effects during ion bombardment with two ion species

S. Berg; I. V. Katardjiev

J. Vac. Sci. Technol. A 13, 831–833 (1995) https://doi.org/10.1116/1.579836

Abstract

View articletitled, Synergistic sputtering effects during ion bombardment with two ion species

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High‐aspect‐ratio Si etching for microsensor fabrication

W. H. Juan; S. W. Pang

J. Vac. Sci. Technol. A 13, 834–838 (1995) https://doi.org/10.1116/1.579837

Abstract

View articletitled, High‐aspect‐ratio Si etching for microsensor fabrication

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Composition of the oxygen plasmas from two inductively coupled sources

M. Tuszewski; J. T. Scheuer; J. A. Tobin

J. Vac. Sci. Technol. A 13, 839–842 (1995) https://doi.org/10.1116/1.579838

Abstract

View articletitled, Composition of the oxygen plasmas from two inductively coupled sources

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Radio frequency hollow cathode discharge for large‐area double‐sided foil processing

D. Korzec; M. Schott; J. Engemann

J. Vac. Sci. Technol. A 13, 843–848 (1995) https://doi.org/10.1116/1.579839

Abstract

View articletitled, Radio frequency hollow cathode discharge for large‐area double‐sided foil processing

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High density, low temperature dry etching in GaAs and InP device technology

S. J. Pearton; C. R. Abernathy; F. Ren

J. Vac. Sci. Technol. A 13, 849–852 (1995) https://doi.org/10.1116/1.579840

Abstract

View articletitled, High density, low temperature dry etching in GaAs and InP device technology

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Substrate bias effects in high‐aspect‐ratio SiO₂ contact etching using an inductively coupled plasma reactor

A. C. Westerheim; A. H. Labun; J. H. Dubash; J. C. Arnold; H. H. Sawin; V. Yu‐Wang

J. Vac. Sci. Technol. A 13, 853–858 (1995) https://doi.org/10.1116/1.579841

Abstract

View articletitled, Substrate bias effects in high‐aspect‐ratio SiO2 contact etching using an inductively coupled plasma reactor

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The effect of the presheath on the ion angular distribution at the wafer surface

Jie Zheng; Ralf P. Brinkmann; James P. McVittie

J. Vac. Sci. Technol. A 13, 859–864 (1995) https://doi.org/10.1116/1.579842

Abstract

View articletitled, The effect of the presheath on the ion angular distribution at the wafer surface

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Ponderomotive effects in helicon plasmas

R. D. Brown; J. H. Gilland; N. Hershkowitz; R. A. Breun

J. Vac. Sci. Technol. A 13, 865–870 (1995) https://doi.org/10.1116/1.579843

Abstract

View articletitled, Ponderomotive effects in helicon plasmas

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Large area radio frequency plasma for microelectronics processing

Z. Yu; D. Shaw; P. Gonzales; G. J. Collins

J. Vac. Sci. Technol. A 13, 871–874 (1995) https://doi.org/10.1116/1.579844

Abstract

View articletitled, Large area radio frequency plasma for microelectronics processing

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Large volume electron cyclotron resonance plasma generation by use of the slotted antenna microwave source

J. Engemann; M. Schott; F. Werner; D. Korzec

J. Vac. Sci. Technol. A 13, 875–882 (1995) https://doi.org/10.1116/1.579845

Abstract

View articletitled, Large volume electron cyclotron resonance plasma generation by use of the slotted antenna microwave source

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Performance and modeling of a permanent magnet electron cyclotron resonance plasma source

A. Saproo; T. D. Mantei

J. Vac. Sci. Technol. A 13, 883–886 (1995) https://doi.org/10.1116/1.579846

Abstract

View articletitled, Performance and modeling of a permanent magnet electron cyclotron resonance plasma source

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Diagnostics and control of radicals in an inductively coupled etching reactor

H. Sugai; K. Nakamura; Y. Hikosaka; M. Nakamura

J. Vac. Sci. Technol. A 13, 887–893 (1995) https://doi.org/10.1116/1.579847

Abstract

View articletitled, Diagnostics and control of radicals in an inductively coupled etching reactor

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Monitoring InP and GaAs etched in Cl₂/Ar using optical emission spectroscopy and mass spectrometry

S. Thomas, III; K. K. Ko; S. W. Pang

J. Vac. Sci. Technol. A 13, 894–899 (1995) https://doi.org/10.1116/1.579848

Abstract

View articletitled, Monitoring InP and GaAs etched in Cl2/Ar using optical emission spectroscopy and mass spectrometry

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Effect of plasma overetch of polysilicon on gate oxide damage

Calvin T. Gabriel; James P. McVittie

J. Vac. Sci. Technol. A 13, 900–904 (1995) https://doi.org/10.1116/1.579849

Abstract

View articletitled, Effect of plasma overetch of polysilicon on gate oxide damage

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Plasma‐induced gate‐oxide charging issues for sub‐0.5 μm complementary metal–oxide–semiconductor technologies

A. K. Stamper; J. B. Lasky; J. W. Adkisson

J. Vac. Sci. Technol. A 13, 905–911 (1995) https://doi.org/10.1116/1.579850

Abstract

View articletitled, Plasma‐induced gate‐oxide charging issues for sub‐0.5 μm complementary metal–oxide–semiconductor technologies

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Plasma‐induced damage of GaAs during etching of refractory metal contacts

R. J. Shul; M. L. Lovejoy; A. G. Baca; J. C. Zolper; D. J. Rieger; M. J. Hafich; R. F. Corless; C. B. Vartuli

J. Vac. Sci. Technol. A 13, 912–917 (1995) https://doi.org/10.1116/1.579851

Abstract

View articletitled, Plasma‐induced damage of GaAs during etching of refractory metal contacts

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Spatiotemporal powder formation and trapping in radio frequency silane plasmas using two‐dimensional polarization‐sensitive laser scattering

J.‐L. Dorier; Ch. Hollenstein; A. A. Howling

J. Vac. Sci. Technol. A 13, 918–926 (1995) https://doi.org/10.1116/1.579852

Abstract

View articletitled, Spatiotemporal powder formation and trapping in radio frequency silane plasmas using two‐dimensional polarization‐sensitive laser scattering

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Dynamics of particulates in the afterglow of a radio frequency excited plasma

Chung‐Kyu Yeon; Jung‐hun Kim; Ki‐Woong Whang

J. Vac. Sci. Technol. A 13, 927–930 (1995) https://doi.org/10.1116/1.579853

Abstract

View articletitled, Dynamics of particulates in the afterglow of a radio frequency excited plasma

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Reactive ion etching‐induced damage in GaAs/AlGaAs quantum well structures and recovery by rapid thermal annealing and hydrogen passivation

Byueng‐Su Yoo; Seong‐Ju Park; Kyung‐Ho Park

J. Vac. Sci. Technol. A 13, 931–934 (1995) https://doi.org/10.1116/1.579653

Abstract

View articletitled, Reactive ion etching‐induced damage in GaAs/AlGaAs quantum well structures and recovery by rapid thermal annealing and hydrogen passivation

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Ion and neutral argon temperatures in electron cyclotron resonance plasmas by Doppler broadened emission spectroscopy

David V. Tsu; R. T. Young; S. R. Ovshinsky; C. C. Klepper; L. A. Berry

J. Vac. Sci. Technol. A 13, 935–942 (1995) https://doi.org/10.1116/1.579654

Abstract

View articletitled, Ion and neutral argon temperatures in electron cyclotron resonance plasmas by Doppler broadened emission spectroscopy

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Identification of plasma induced failure modes in the development of a bipolar‐complementary metal–oxide–semiconductor process

J. J. Hackenberg; M. J. Dion; D. F. Hemmenway; L. G. Pearce; J. W. Werner

J. Vac. Sci. Technol. A 13, 943–947 (1995) https://doi.org/10.1116/1.579655

Abstract

View articletitled, Identification of plasma induced failure modes in the development of a bipolar‐complementary metal–oxide–semiconductor process

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Preparation of germanium doped plasma polymerized coatings as inertial confinement fusion target ablators

Raymond Brusasco; Michael Saculla; Robert Cook

J. Vac. Sci. Technol. A 13, 948–951 (1995) https://doi.org/10.1116/1.579656

Abstract

View articletitled, Preparation of germanium doped plasma polymerized coatings as inertial confinement fusion target ablators

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Development of neutral‐beam‐assisted etcher

Takashi Yunogami; Ken’etsu Yokogawa; Tatsumi Mizutani

J. Vac. Sci. Technol. A 13, 952–958 (1995) https://doi.org/10.1116/1.579657

Abstract

View articletitled, Development of neutral‐beam‐assisted etcher

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Hyperthermal neutral beam etching

Konstantinos P. Giapis; Teresa A. Moore; Timothy K. Minton

J. Vac. Sci. Technol. A 13, 959–965 (1995) https://doi.org/10.1116/1.579658

Abstract

View articletitled, Hyperthermal neutral beam etching

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Molecular dynamics simulation of atomic layer etching of silicon

Satish D. Athavale; Demetre J. Economou

J. Vac. Sci. Technol. A 13, 966–971 (1995) https://doi.org/10.1116/1.579659

Abstract

View articletitled, Molecular dynamics simulation of atomic layer etching of silicon

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Defect production and recombination during low‐energy ion processing

B. K. Kellerman; J. A. Floro; E. Chason; D. K. Brice; S. T. Picraux; J. M. White

J. Vac. Sci. Technol. A 13, 972–978 (1995) https://doi.org/10.1116/1.579660

Abstract

View articletitled, Defect production and recombination during low‐energy ion processing

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Precision shell characterization using radial averaging of x‐ray images

Richard B. Stephens

J. Vac. Sci. Technol. A 13, 979–982 (1995) https://doi.org/10.1116/1.579661

Abstract

View articletitled, Precision shell characterization using radial averaging of x‐ray images

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The design, performance, and application of an atomic force microscope‐based profilometer

R. L. McEachern; C. E. Moore; R. J. Wallace

J. Vac. Sci. Technol. A 13, 983–989 (1995) https://doi.org/10.1116/1.579662

Abstract

View articletitled, The design, performance, and application of an atomic force microscope‐based profilometer

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Thin film sensors for automobiles

Y. Taga

J. Vac. Sci. Technol. A 13, 990–995 (1995) https://doi.org/10.1116/1.579663

Abstract

View articletitled, Thin film sensors for automobiles

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Increasing the selectivity of commercially available tin oxide based gas sensors for monitoring combustible gases in process environments

Roger M. Hawk; Arvind Narayanaswamy

J. Vac. Sci. Technol. A 13, 996–1000 (1995) https://doi.org/10.1116/1.579664

Abstract

View articletitled, Increasing the selectivity of commercially available tin oxide based gas sensors for monitoring combustible gases in process environments

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Piezoelectric tactile integrated circuit sensor

Edward S. Kolesar, Jr.; Craig S. Dyson

J. Vac. Sci. Technol. A 13, 1001–1007 (1995) https://doi.org/10.1116/1.579388

Abstract

View articletitled, Piezoelectric tactile integrated circuit sensor

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Composition and morphology of a MgF₂/Al multilayer thin film reflective coating

J. J. Weimer; J. Kim; M. Zukic; D. G. Torr

J. Vac. Sci. Technol. A 13, 1008–1012 (1995) https://doi.org/10.1116/1.579389

Abstract

View articletitled, Composition and morphology of a MgF2/Al multilayer thin film reflective coating

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Production and characterization of multilayer KCl:LiF thin films on glass

F. Somma; A. Ercoli; S. Santucci; L. Lozzi; M. Passacantando; P. Picozzi

J. Vac. Sci. Technol. A 13, 1013–1016 (1995) https://doi.org/10.1116/1.579390

Abstract

View articletitled, Production and characterization of multilayer KCl:LiF thin films on glass

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Smart thin film TiNi/piezoelectric heterostructures

P. G. Mercado; A. P. Jardine

J. Vac. Sci. Technol. A 13, 1017–1021 (1995) https://doi.org/10.1116/1.579391

Abstract

View articletitled, Smart thin film TiNi/piezoelectric heterostructures

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Microstructures of sputtered PbTiO₃ thin films

Toshifumi Satoh; Kiyotaka Wasa; Kenji Tabata; Hideaki Adachi; Yo Ichikawa; Kentaro Setsune

J. Vac. Sci. Technol. A 13, 1022–1026 (1995) https://doi.org/10.1116/1.579577

Abstract

View articletitled, Microstructures of sputtered PbTiO3 thin films

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A novel technique for characterizing the surface coverage of thin‐film chemical vapor deposition in ultra‐high‐aspect‐ratio microstructures

Robert J. Soave; G. William Tasker; Alan M. Then; James W. Mayer; Yosi Shacham‐Diamand

J. Vac. Sci. Technol. A 13, 1027–1031 (1995) https://doi.org/10.1116/1.579578

Abstract

View articletitled, A novel technique for characterizing the surface coverage of thin‐film chemical vapor deposition in ultra‐high‐aspect‐ratio microstructures

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Fabrication of thin films with highly porous microstructures

K. Robbie; L. J. Friedrich; S. K. Dew; T. Smy; M. J. Brett

J. Vac. Sci. Technol. A 13, 1032–1035 (1995) https://doi.org/10.1116/1.579579

Abstract

View articletitled, Fabrication of thin films with highly porous microstructures

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Heteroepitaxial growth of C₇₀ films on MoS₂(0001) and their characterization by low energy electron diffraction and photoelectron spectroscopy

Bo‐ying Han; K. Hevesi; Li‐ming Yu; G. Gensterblum; J.‐J. Pireaux; P. A. Thiry; R. Caudano

J. Vac. Sci. Technol. A 13, 1036–1039 (1995) https://doi.org/10.1116/1.579580

Abstract

View articletitled, Heteroepitaxial growth of C70 films on MoS2(0001) and their characterization by low energy electron diffraction and photoelectron spectroscopy

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Magnetic, microstructural, and compositional characterization of Fe–N thin films for recording sensor applications

Y. K. Kim; P. B. Narayan

J. Vac. Sci. Technol. A 13, 1040–1043 (1995) https://doi.org/10.1116/1.579581

Abstract

View articletitled, Magnetic, microstructural, and compositional characterization of Fe–N thin films for recording sensor applications

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Positron annihilation studies of diamondlike nanocomposite films

P. Asoka‐Kumar; B. F. Dorfman; M. G. Abraizov; D. Yan; Fred H. Pollak

J. Vac. Sci. Technol. A 13, 1044–1047 (1995) https://doi.org/10.1116/1.579582

Abstract

View articletitled, Positron annihilation studies of diamondlike nanocomposite films

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Calculation of the figure of merit for indium tin oxide films based on basic theory

S. A. Knickerbocker; A. K. Kulkarni

J. Vac. Sci. Technol. A 13, 1048–1052 (1995) https://doi.org/10.1116/1.579583

Abstract

View articletitled, Calculation of the figure of merit for indium tin oxide films based on basic theory

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Low temperature formation of textured ZnO transparent electrodes by magnetron sputtering

Tadatsugu Minami; Hideo Sonohara; Shinzo Takata; Ichiro Fukuda

J. Vac. Sci. Technol. A 13, 1053–1057 (1995) https://doi.org/10.1116/1.579584

Abstract

View articletitled, Low temperature formation of textured ZnO transparent electrodes by magnetron sputtering

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Vacuum conditions for sputtering thin film TiNi

A. Peter Jardine

J. Vac. Sci. Technol. A 13, 1058–1062 (1995) https://doi.org/10.1116/1.579585

Abstract

View articletitled, Vacuum conditions for sputtering thin film TiNi

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Ionized magnetron sputter deposition of amorphous carbon nitride thin films

D. Li; S. Lopez; Y. W. Chung; M. S. Wong; W. D. Sproul

J. Vac. Sci. Technol. A 13, 1063–1066 (1995) https://doi.org/10.1116/1.579586

Abstract

View articletitled, Ionized magnetron sputter deposition of amorphous carbon nitride thin films

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Residual stress in metal ion implanted titanium nitride films studied by glancing incidence x‐ray diffraction

Anthony J. Perry; James R. Treglio; Vaclav Valvoda; David Rafaja

J. Vac. Sci. Technol. A 13, 1067–1072 (1995) https://doi.org/10.1116/1.579587

Abstract

View articletitled, Residual stress in metal ion implanted titanium nitride films studied by glancing incidence x‐ray diffraction

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Sputter deposition of cermet fuel electrodes for solid oxide fuel cells

T. Tsai; S. A. Barnett

J. Vac. Sci. Technol. A 13, 1073–1077 (1995) https://doi.org/10.1116/1.579588

Abstract

View articletitled, Sputter deposition of cermet fuel electrodes for solid oxide fuel cells

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Morphology of precursors and CuIn_1−xGa_xSe₂ thin films prepared by a two‐stage selenization process

Neelkanth G. Dhere; Shanker Kuttath; Helio R. Moutinho

J. Vac. Sci. Technol. A 13, 1078–1082 (1995) https://doi.org/10.1116/1.579589

Abstract

View articletitled, Morphology of precursors and CuIn1−xGaxSe2 thin films prepared by a two‐stage selenization process

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Growth of chalcopyrite Cu(In,Ga)Se₂/CuIn₃Se₅ absorbers by radio frequency sputtering

J. L. Hernández‐Rojas; I. Mártil; J. Santamaria; G. González‐Diaz; F. Sánchez‐Quesada

J. Vac. Sci. Technol. A 13, 1083–1087 (1995) https://doi.org/10.1116/1.579590

Abstract

View articletitled, Growth of chalcopyrite Cu(In,Ga)Se2/CuIn3Se5 absorbers by radio frequency sputtering

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Attaining a solar energy economy with active thin film structures

R. B. Goldner

J. Vac. Sci. Technol. A 13, 1088–1094 (1995) https://doi.org/10.1116/1.579591

Abstract

View articletitled, Attaining a solar energy economy with active thin film structures

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Properties of transparent zinc‐stannate conducting films prepared by radio frequency magnetron sputtering

T. Minami; S. Takata; H. Sato; H. Sonohara

J. Vac. Sci. Technol. A 13, 1095–1099 (1995) https://doi.org/10.1116/1.579592

Abstract

View articletitled, Properties of transparent zinc‐stannate conducting films prepared by radio frequency magnetron sputtering

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Oxygen content of indium tin oxide films fabricated by reactive sputtering

Shinichi Honda; Akira Tsujimoto; Michio Watamori; Kenjiro Oura

J. Vac. Sci. Technol. A 13, 1100–1103 (1995) https://doi.org/10.1116/1.579593

Abstract

View articletitled, Oxygen content of indium tin oxide films fabricated by reactive sputtering

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Structure and composition of hydrogenated Ti_xC_y thin films prepared by reactive sputtering

M. P. Delplancke; V. Vassileris; R. Winand

J. Vac. Sci. Technol. A 13, 1104–1110 (1995) https://doi.org/10.1116/1.579594

Abstract

View articletitled, Structure and composition of hydrogenated TixCy thin films prepared by reactive sputtering

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Synchrotron radiation photoelectron emission microscopy of chemical‐vapor‐deposited diamond electron emitters

J. D. Shovlin; M. E. Kordesch; D. Dunham; B. P. Tonner; W. Engel

J. Vac. Sci. Technol. A 13, 1111–1115 (1995) https://doi.org/10.1116/1.579595

Abstract

View articletitled, Synchrotron radiation photoelectron emission microscopy of chemical‐vapor‐deposited diamond electron emitters

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Surface spectroscopic studies of the deposition of TiN thin films from tetrakis‐(dimethylamido)‐titanium and ammonia

J. S. Corneille; P. J. Chen; C. M. Truong; W. S. Oh; D. W. Goodman

J. Vac. Sci. Technol. A 13, 1116–1120 (1995) https://doi.org/10.1116/1.579596

Abstract

View articletitled, Surface spectroscopic studies of the deposition of TiN thin films from tetrakis‐(dimethylamido)‐titanium and ammonia

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Characterization of aluminum based oxide layers formed by microwave plasma

Zivit Katz‐Tsameret; Avi Raveh

J. Vac. Sci. Technol. A 13, 1121–1127 (1995) https://doi.org/10.1116/1.579597

Abstract

View articletitled, Characterization of aluminum based oxide layers formed by microwave plasma

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Investigation of pyroelectric characteristics of lead titanate thin films for microsensor applications

K. K. Deb; K. W. Bennett; P. S. Brody

J. Vac. Sci. Technol. A 13, 1128–1132 (1995) https://doi.org/10.1116/1.579598

Abstract

View articletitled, Investigation of pyroelectric characteristics of lead titanate thin films for microsensor applications

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ReSi₂ thin‐film infrared detectors

James P. Becker; John E. Mahan; Robert G. Long

J. Vac. Sci. Technol. A 13, 1133–1135 (1995) https://doi.org/10.1116/1.579599

Abstract

View articletitled, ReSi2 thin‐film infrared detectors

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Surface analysis at low to ultrahigh vacuum by ion scattering and direct recoil spectroscopy

M. S. Hammond; J. A. Schultz; A. R. Krauss

J. Vac. Sci. Technol. A 13, 1136–1144 (1995) https://doi.org/10.1116/1.579600

Abstract

View articletitled, Surface analysis at low to ultrahigh vacuum by ion scattering and direct recoil spectroscopy

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Spectroscopic ellipsometry of thin films on transparent substrates: A formalism for data interpretation

Y. H. Yang; J. R. Abelson

J. Vac. Sci. Technol. A 13, 1145–1149 (1995) https://doi.org/10.1116/1.579601

Abstract

View articletitled, Spectroscopic ellipsometry of thin films on transparent substrates: A formalism for data interpretation

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Optical emission spectroscopy of H₂–CO and H₂O–CH₃OH plasmas for diamond growth

R. Manukonda; R. Dillon; T. Furtak

J. Vac. Sci. Technol. A 13, 1150–1154 (1995) https://doi.org/10.1116/1.579602

Abstract

View articletitled, Optical emission spectroscopy of H2–CO and H2O–CH3OH plasmas for diamond growth

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Effect of 20–95 eV Ar ion bombardment of GaAs(001): In pursuit of damage‐free ion‐assisted growth and etching

J. Mirecki Millunchick; L. Hultman; S. A. Barnett

J. Vac. Sci. Technol. A 13, 1155–1159 (1995) https://doi.org/10.1116/1.579603

Abstract

View articletitled, Effect of 20–95 eV Ar ion bombardment of GaAs(001): In pursuit of damage‐free ion‐assisted growth and etching

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A molecular dynamics study of transient processes during deposition on (001) metal surfaces

C. M. Gilmore; J. A. Sprague

J. Vac. Sci. Technol. A 13, 1160–1164 (1995) https://doi.org/10.1116/1.579854

Abstract

View articletitled, A molecular dynamics study of transient processes during deposition on (001) metal surfaces

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Annealing study of gold films using scanning tunneling microscopy

D. Porath; E. Bar‐Sadeh; M. Wolovelsky; A. Grayevsky; Y. Goldstein; O. Millo

J. Vac. Sci. Technol. A 13, 1165–1170 (1995) https://doi.org/10.1116/1.579855

Abstract

View articletitled, Annealing study of gold films using scanning tunneling microscopy

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Role of temporal delay in dual‐laser ablated plumes

S. Witanachchi; P. Mukherjee

J. Vac. Sci. Technol. A 13, 1171–1174 (1995) https://doi.org/10.1116/1.579856

Abstract

View articletitled, Role of temporal delay in dual‐laser ablated plumes

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Large‐area pulsed laser deposition: Techniques and applications

J. A. Greer; M. D. Tabat

J. Vac. Sci. Technol. A 13, 1175–1181 (1995) https://doi.org/10.1116/1.579857

Abstract

View articletitled, Large‐area pulsed laser deposition: Techniques and applications

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Film deposition and surface modification using intense pulsed ion beams

C. A. Meli; K. S. Grabowski; D. D. Hinshelwood; S. J. Stephanakis; D. J. Rej; W. J. Waganaar

J. Vac. Sci. Technol. A 13, 1182–1187 (1995) https://doi.org/10.1116/1.579858

Abstract

View articletitled, Film deposition and surface modification using intense pulsed ion beams

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Reactive direct current magnetron sputtering of aluminum oxide coatings

W. D. Sproul; M. E. Graham; M. S. Wong; S. Lopez; D. Li; R. A. Scholl

J. Vac. Sci. Technol. A 13, 1188–1191 (1995) https://doi.org/10.1116/1.579859

Abstract

View articletitled, Reactive direct current magnetron sputtering of aluminum oxide coatings

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Simultaneous deposition and lamination process in vacuum

A. W. Freeland; J. R. Germundson; R. L. Swisher; K. P. Barnes; J. A. Phipps; C. T. Wan

J. Vac. Sci. Technol. A 13, 1192–1195 (1995) https://doi.org/10.1116/1.579860

Abstract

View articletitled, Simultaneous deposition and lamination process in vacuum

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Thermomechanical and chemical properties of SiC–C functionally gradient coatings on graphite

M. R. Richards; A. C. Richards; M. Taya; F. S. Ohuchi

J. Vac. Sci. Technol. A 13, 1196–1201 (1995) https://doi.org/10.1116/1.579861

Abstract

View articletitled, Thermomechanical and chemical properties of SiC–C functionally gradient coatings on graphite

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Plasma‐based surface engineering processes for wear and corrosion protection

A. Matthews; A. Leyland; B. Dorn; P. R. Stevenson; M. Bin‐Sudin; C. Rebholz; A. Voevodin; J. Schneider

J. Vac. Sci. Technol. A 13, 1202–1207 (1995) https://doi.org/10.1116/1.579862

Abstract

View articletitled, Plasma‐based surface engineering processes for wear and corrosion protection

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A vacuum technology for coating TiCN‐based cermets

I. Yu. Konyashin

J. Vac. Sci. Technol. A 13, 1208–1212 (1995) https://doi.org/10.1116/1.579863

Abstract

View articletitled, A vacuum technology for coating TiCN‐based cermets

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Surface trimer crystallization on poly (ethylene terephthalate) studied by time‐of‐flight secondary ion mass spectrometry

S. Reichlmaier; S. R. Bryan; D. Briggs

J. Vac. Sci. Technol. A 13, 1217–1223 (1995) https://doi.org/10.1116/1.579864

Abstract

View articletitled, Surface trimer crystallization on poly (ethylene terephthalate) studied by time‐of‐flight secondary ion mass spectrometry

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Scanning photoelectron microscope with submicron lateral resolution using a Wolter‐type x‐ray focusing mirror

Ken Ninomiya; Masaki Hasegawa

J. Vac. Sci. Technol. A 13, 1224–1228 (1995) https://doi.org/10.1116/1.579865

Abstract

View articletitled, Scanning photoelectron microscope with submicron lateral resolution using a Wolter‐type x‐ray focusing mirror

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Scanning Auger microscopy and x‐ray photoelectron spectroscopy studies of Roman bronzes

E. Paparazzo; L. Moretto; J. P. Northover; C. D’Amato; A. Palmieri

J. Vac. Sci. Technol. A 13, 1229–1233 (1995) https://doi.org/10.1116/1.579866

Abstract

View articletitled, Scanning Auger microscopy and x‐ray photoelectron spectroscopy studies of Roman bronzes

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Strain imaging analysis of Si using Raman microscopy

K. Ajito; J. P. H. Sukamto; L. A. Nagahara; K. Hashimoto; A. Fujishima

J. Vac. Sci. Technol. A 13, 1234–1238 (1995) https://doi.org/10.1116/1.579867

Abstract

View articletitled, Strain imaging analysis of Si using Raman microscopy

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Nature of the use of adventitious carbon as a binding energy standard

Tery L. Barr; Sudipta Seal

J. Vac. Sci. Technol. A 13, 1239–1246 (1995) https://doi.org/10.1116/1.579868

Abstract

View articletitled, Nature of the use of adventitious carbon as a binding energy standard

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Oxidation of gold by ultraviolet light and ozone at 25 °C

David E. King

J. Vac. Sci. Technol. A 13, 1247–1253 (1995) https://doi.org/10.1116/1.579869

Abstract

View articletitled, Oxidation of gold by ultraviolet light and ozone at 25 °C

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X‐ray photoelectron and infrared spectroscopies of Cu‐implanted silica and borosilicate glasses

D. O. Henderson; M. A. George; Y. S. Tung; R. Mu; A. Burger; S. H. Morgan; W. E. Collins; C. W. White; R. A. Zuhr; R. H. Magruder, III

J. Vac. Sci. Technol. A 13, 1254–1259 (1995) https://doi.org/10.1116/1.579870

Abstract

View articletitled, X‐ray photoelectron and infrared spectroscopies of Cu‐implanted silica and borosilicate glasses

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Investigations of the surface chemistry of pathogenic silicates

Sudipta Seal; Susan Krezoski; Steven E. Hardcastle; Tery L. Barr; David H. Petering; Chi‐Feng Cheng; Jacek Klinowski; Peter H. Evans

J. Vac. Sci. Technol. A 13, 1260–1266 (1995) https://doi.org/10.1116/1.579871

Abstract

View articletitled, Investigations of the surface chemistry of pathogenic silicates

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Depth profiling free carbon in silicon carbide

T. E. Paulson; V. J. Bojan; B. M. Wichterman; C. G. Pantano

J. Vac. Sci. Technol. A 13, 1267–1274 (1995) https://doi.org/10.1116/1.579872

Abstract

View articletitled, Depth profiling free carbon in silicon carbide

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Metal overlayers on organic functional groups of self‐organized molecular assemblies. V. Ion scattering spectroscopy and x‐ray photoelectron spectroscopy of Ag/COOH interfaces

G. C. Herdt; A. W. Czanderna

J. Vac. Sci. Technol. A 13, 1275–1280 (1995) https://doi.org/10.1116/1.579873

Abstract

View articletitled, Metal overlayers on organic functional groups of self‐organized molecular assemblies. V. Ion scattering spectroscopy and x‐ray photoelectron spectroscopy of Ag/COOH interfaces

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Comparative analysis of trimethylmethoxysilane and trimethylchlorosilane bonding on polished copper surfaces

S. Mishra; J. J. Weimer

J. Vac. Sci. Technol. A 13, 1281–1285 (1995) https://doi.org/10.1116/1.579550

Abstract

View articletitled, Comparative analysis of trimethylmethoxysilane and trimethylchlorosilane bonding on polished copper surfaces

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Counterion and dopant induced effects on the structure of electropolymerized polyaniline thin films

T. L. Porter; D. Minore; A. G. Sykes

J. Vac. Sci. Technol. A 13, 1286–1289 (1995) https://doi.org/10.1116/1.579551

Abstract

View articletitled, Counterion and dopant induced effects on the structure of electropolymerized polyaniline thin films

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Thickness determination of uniform overlayers on rough substrates: A comparison of calculations for Al₂O₃/Al to x‐ray photoelectron spectroscopy and atomic force microscopy experiments on technical aluminum foils

P. L. J. Gunter; J. W. Niemantsverdriet

J. Vac. Sci. Technol. A 13, 1290–1292 (1995) https://doi.org/10.1116/1.579552

Abstract

View articletitled, Thickness determination of uniform overlayers on rough substrates: A comparison of calculations for Al2O3/Al to x‐ray photoelectron spectroscopy and atomic force microscopy experiments on technical aluminum foils

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Quantitative depth profiling of oxygen in homoepitaxial SrTiO₃ films

Michio Watamori; Kenjiro Oura; Takao Nakamura

J. Vac. Sci. Technol. A 13, 1293–1298 (1995) https://doi.org/10.1116/1.579553

Abstract

View articletitled, Quantitative depth profiling of oxygen in homoepitaxial SrTiO3 films

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An x‐ray photoelectron spectroscopic study of voltage bias implantation and nitrogen etching of aluminum

Michael A. Rooke; John A. Rotole; Peter M. A. Sherwood

J. Vac. Sci. Technol. A 13, 1299–1303 (1995) https://doi.org/10.1116/1.579554

Abstract

View articletitled, An x‐ray photoelectron spectroscopic study of voltage bias implantation and nitrogen etching of aluminum

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Inelastic mean free pathlengths of electrons for quantitative investigations of ultrathin technological surface layers by angle‐resolved x‐ray photoelectron spectrometry

Werner H. Gries

J. Vac. Sci. Technol. A 13, 1304–1309 (1995) https://doi.org/10.1116/1.579555

Abstract

View articletitled, Inelastic mean free pathlengths of electrons for quantitative investigations of ultrathin technological surface layers by angle‐resolved x‐ray photoelectron spectrometry

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Simultaneous dual‐element analyses of refractory metals in naturally occurring matrices using resonance ionization of sputtered atoms

W. F. Calaway; R. C. Wiens; D. S. Burnett; M. J. Pellin; D. M. Gruen

J. Vac. Sci. Technol. A 13, 1310–1315 (1995) https://doi.org/10.1116/1.579556

Abstract

View articletitled, Simultaneous dual‐element analyses of refractory metals in naturally occurring matrices using resonance ionization of sputtered atoms

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Resolution in sputter depth profiling assessed by AlAs/GaAs superlattices

K. Kajiwara; R. Shimizu

J. Vac. Sci. Technol. A 13, 1316–1320 (1995) https://doi.org/10.1116/1.579557

Abstract

View articletitled, Resolution in sputter depth profiling assessed by AlAs/GaAs superlattices

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The effect of tilt angle on As implants in Si

J. M. Anthony; J. A. Keenan

J. Vac. Sci. Technol. A 13, 1321–1324 (1995) https://doi.org/10.1116/1.579558

Abstract

View articletitled, The effect of tilt angle on As implants in Si

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Nondestructive and quantitative depth profiling analysis of ion bombarded Ta₂O₅ surfaces by medium energy ion scattering spectroscopy

J. C. Lee; C. S. Chung; H. J. Kang; Y. P. Kim; H. K. Kim; D. W. Moon

J. Vac. Sci. Technol. A 13, 1325–1330 (1995) https://doi.org/10.1116/1.579559

Abstract

View articletitled, Nondestructive and quantitative depth profiling analysis of ion bombarded Ta2O5 surfaces by medium energy ion scattering spectroscopy

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Probing the different phases of self‐assembled monolayers on metal surfaces: Temperature dependence of the C–H stretching modes

F. Bensebaa; T. H. Ellis; A. Badia; R. B. Lennox

J. Vac. Sci. Technol. A 13, 1331–1336 (1995) https://doi.org/10.1116/1.579560

Abstract

View articletitled, Probing the different phases of self‐assembled monolayers on metal surfaces: Temperature dependence of the C–H stretching modes

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Metal overlayers on organic functional groups of self‐assembled monolayers. VI. X‐ray photoelectron spectroscopy of Cr/COOH on 16‐mercaptohexadecanoic acid

D. R. Jung; A. W. Czanderna

J. Vac. Sci. Technol. A 13, 1337–1344 (1995) https://doi.org/10.1116/1.579561

Abstract

View articletitled, Metal overlayers on organic functional groups of self‐assembled monolayers. VI. X‐ray photoelectron spectroscopy of Cr/COOH on 16‐mercaptohexadecanoic acid

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Adsorption of perfluorinated n‐alkanoic acids on native aluminum oxide surfaces

R. M. Wallace; P. J. Chen; S. A. Henck; D. A. Webb

J. Vac. Sci. Technol. A 13, 1345–1350 (1995) https://doi.org/10.1116/1.579562

Abstract

View articletitled, Adsorption of perfluorinated n‐alkanoic acids on native aluminum oxide surfaces

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Probing the interfacial properties of poly(vinyl acetate‐ethylene) copolymer/poly(vinyl chloride) laminations by time‐of‐flight secondary ion mass spectrometry

Paula A. Cornelio Clark; Sharon A. Gardner; David Horwat

J. Vac. Sci. Technol. A 13, 1351–1358 (1995) https://doi.org/10.1116/1.579563

Abstract

View articletitled, Probing the interfacial properties of poly(vinyl acetate‐ethylene) copolymer/poly(vinyl chloride) laminations by time‐of‐flight secondary ion mass spectrometry

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Surface chemistry at metallic step defect sites

John T. Yates, Jr.

J. Vac. Sci. Technol. A 13, 1359–1367 (1995) https://doi.org/10.1116/1.579564

Abstract

View articletitled, Surface chemistry at metallic step defect sites

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Surface chemistry of 1,1‐dimethylhydrazine on platinum

A. L. Schwaner; M. Kovar; Diann J. Alberas; J. M. White

J. Vac. Sci. Technol. A 13, 1368–1372 (1995) https://doi.org/10.1116/1.579565

Abstract

View articletitled, Surface chemistry of 1,1‐dimethylhydrazine on platinum

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Simulation and sensitivity analysis of the heterogeneous oxidation of methane on a platinum foil

F. Behrendt; O. Deutschmann; U. Maas; J. Warnatz

J. Vac. Sci. Technol. A 13, 1373–1377 (1995) https://doi.org/10.1116/1.579566

Abstract

View articletitled, Simulation and sensitivity analysis of the heterogeneous oxidation of methane on a platinum foil

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Surface relaxation of PbTe(100)

A. A. Lazarides; C. B. Duke; A. Paton; A. Kahn

J. Vac. Sci. Technol. A 13, 1378–1381 (1995) https://doi.org/10.1116/1.579567

Abstract

View articletitled, Surface relaxation of PbTe(100)

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High resolution photoemission and Auger parameter studies of electronic structure of tin oxides

L. Kövér; G. Moretti; Zs. Kovács; R. Sanjinés; I. Cserny; G. Margaritondo; J. Pálinkás; H. Adachi

J. Vac. Sci. Technol. A 13, 1382–1388 (1995) https://doi.org/10.1116/1.579568

Abstract

View articletitled, High resolution photoemission and Auger parameter studies of electronic structure of tin oxides

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Modification of overlayer growth kinetics by surface interlayers: The Si(111)√7×√3‐indium surface

S. L. Surnev; J. Kraft; F. P. Netzer

J. Vac. Sci. Technol. A 13, 1389–1395 (1995) https://doi.org/10.1116/1.579569

Abstract

View articletitled, Modification of overlayer growth kinetics by surface interlayers: The Si(111)√7×√3‐indium surface

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Surface reaction–diffusion fronts observed with photoelectron emission microscopy during carbon deposition on Mo(310)

Adrian Garcia; Martin E. Kordesch

J. Vac. Sci. Technol. A 13, 1396–1399 (1995) https://doi.org/10.1116/1.579570

Abstract

View articletitled, Surface reaction–diffusion fronts observed with photoelectron emission microscopy during carbon deposition on Mo(310)

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Multibounce direct scattering of N₂ from Cu(110): Experiment and trajectory simulations

Jennifer L. W. Siders; Greg O. Sitz

J. Vac. Sci. Technol. A 13, 1400–1404 (1995) https://doi.org/10.1116/1.579571

Abstract

View articletitled, Multibounce direct scattering of N2 from Cu(110): Experiment and trajectory simulations

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Role of C in O removal from ultrathin layers of oxidized La on Pd(100)

G. W. Graham; B. U. M. Rao; M. Ahmad

J. Vac. Sci. Technol. A 13, 1405–1408 (1995) https://doi.org/10.1116/1.579572

Abstract

View articletitled, Role of C in O removal from ultrathin layers of oxidized La on Pd(100)

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The early stages of ruthenium oxidation

J. Hrbek; D. G. van Campen; I. J. Malik

J. Vac. Sci. Technol. A 13, 1409–1412 (1995) https://doi.org/10.1116/1.579573

Abstract

View articletitled, The early stages of ruthenium oxidation

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Disorder effects at the Al(110) surface

W. Schommers; C. Mayer; H. Göbel; P. von Blanckenhagen

J. Vac. Sci. Technol. A 13, 1413–1415 (1995) https://doi.org/10.1116/1.579574

Abstract

View articletitled, Disorder effects at the Al(110) surface

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Scattering of ³He from the NiO(001) surface

G. G. Bishop; J. Baker; E. S. Gillman; J. J. Hernández; S. A. Safron; J. G. Skofronick

J. Vac. Sci. Technol. A 13, 1416–1420 (1995) https://doi.org/10.1116/1.579575

Abstract

View articletitled, Scattering of 3He from the NiO(001) surface

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Resonant neutralization of ⁷Li⁺ scattered from Cs/Al(100) as a probe of the local electrostatic potential

C. B. Weare; J. A. Yarmoff

J. Vac. Sci. Technol. A 13, 1421–1425 (1995) https://doi.org/10.1116/1.579576

Abstract

View articletitled, Resonant neutralization of 7Li+ scattered from Cs/Al(100) as a probe of the local electrostatic potential

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Effect of preadsorbed oxygen on the direct dissociative chemisorption of ethane on Ir(110)

D. Kelly; W. Hago; W. H. Weinberg

J. Vac. Sci. Technol. A 13, 1426–1430 (1995) https://doi.org/10.1116/1.579681

Abstract

View articletitled, Effect of preadsorbed oxygen on the direct dissociative chemisorption of ethane on Ir(110)

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Boron‐induced reconstructions of Si(001) investigated by scanning tunneling microscopy

Yajun Wang; Robert J. Hamers

J. Vac. Sci. Technol. A 13, 1431–1437 (1995) https://doi.org/10.1116/1.579682

Abstract

View articletitled, Boron‐induced reconstructions of Si(001) investigated by scanning tunneling microscopy

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Scanning tunneling microscopy observation of hydrogen‐induced Ag cluster formation on the Si(111) surfaces

Hideaki Ohnishi; Yasuji Yamamoto; Kenjiro Oura; Itsuo Katayama; Yasuyuki Ohba

J. Vac. Sci. Technol. A 13, 1438–1442 (1995) https://doi.org/10.1116/1.579683

Abstract

View articletitled, Scanning tunneling microscopy observation of hydrogen‐induced Ag cluster formation on the Si(111) surfaces

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Initial growth of ultrathin Pd films on Cu(001)

J. Yao; Y. G. Shen; D. J. O’Connor; B. V. King

J. Vac. Sci. Technol. A 13, 1443–1447 (1995) https://doi.org/10.1116/1.579684

Abstract

View articletitled, Initial growth of ultrathin Pd films on Cu(001)

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Surface chemistry of carbon tetrabromide on GaAs(100)

M. McEllistrem; J. M. White

J. Vac. Sci. Technol. A 13, 1448–1454 (1995) https://doi.org/10.1116/1.579685

Abstract

View articletitled, Surface chemistry of carbon tetrabromide on GaAs(100)

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Surface chemistry of 1,1‐dimethylhydrazine on GaAs(100)

Y.‐M. Sun; D. W. Sloan; M. McEllistrem; A. L. Schwaner; J. M. White

J. Vac. Sci. Technol. A 13, 1455–1460 (1995) https://doi.org/10.1116/1.579686

Abstract

View articletitled, Surface chemistry of 1,1‐dimethylhydrazine on GaAs(100)

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Surface chemistry of diethylsilane and diethylgermane on Ge(100)

A. Mahajan; B. K. Kellerman; John M. Heitzinger; S. Banerjee; A. Tasch; J. M. White; J. G. Ekerdt

J. Vac. Sci. Technol. A 13, 1461–1468 (1995) https://doi.org/10.1116/1.579687

Abstract

View articletitled, Surface chemistry of diethylsilane and diethylgermane on Ge(100)

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