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Adsorption and decomposition of trichlorosilane and trichlorogermane on porous silicon and Si(100)2×1 surfaces
J. Vac. Sci. Technol. A 13, 1–10 (1995)
https://doi.org/10.1116/1.579436
Photoelectron spectroscopy from atomic layer epitaxially grown ZnTe/ZnSe heterostructures
J. Vac. Sci. Technol. A 13, 11–16 (1995)
https://doi.org/10.1116/1.579423
Studies of Ag films deposited using partially ionized beam deposition
Zhong‐Min Ren; Yuan‐Cheng Du; Mao‐Qi He; Zhi‐Feng Ying; Xia‐Xing Xiong; Fu‐Ming Li; Yi Su; Liang‐Yao Chen; W. L. Brown
J. Vac. Sci. Technol. A 13, 17–20 (1995)
https://doi.org/10.1116/1.579435
Nuclear microprobe analysis of Hg1−xCdxTe metal–semiconductor–metal detectors on substrates of GaAs and GaAs/Si
J. Vac. Sci. Technol. A 13, 21–25 (1995)
https://doi.org/10.1116/1.579437
Desorption of positive and negative fluorine ions from BaF2 surfaces by core level excitation under electron bombardment
J. Vac. Sci. Technol. A 13, 26–29 (1995)
https://doi.org/10.1116/1.579438
Adsorption and decomposition of dichlorosilane on porous silicon surfaces
J. Vac. Sci. Technol. A 13, 35–41 (1995)
https://doi.org/10.1116/1.579440
Direct analysis of contamination in submicron contact holes by thermal desorption spectroscopy
J. Vac. Sci. Technol. A 13, 42–46 (1995)
https://doi.org/10.1116/1.579441
Study of tunneling current oscillation dependence on SiO2 thickness and Si roughness at the Si/SiO2 interface
J. Vac. Sci. Technol. A 13, 47–53 (1995)
https://doi.org/10.1116/1.579442
Kinetics and mechanism of plasma oxidation of tantalum silicides
J. Vac. Sci. Technol. A 13, 54–62 (1995)
https://doi.org/10.1116/1.579443
Dry etching of palladium thin films in fluorine containing plasmas: X‐ray photoelectron spectroscopy investigation
J. Vac. Sci. Technol. A 13, 63–66 (1995)
https://doi.org/10.1116/1.579444
Reactive ion etching induced damage with gas mixtures CHF3/O2 and SF6/O2
J. Vac. Sci. Technol. A 13, 67–72 (1995)
https://doi.org/10.1116/1.579445
Atomic layer molecular beam epitaxy growth of GaAs1−xPx layers: Study of P2 incorporation by the reflectance difference technique
J. Vac. Sci. Technol. A 13, 73–77 (1995)
https://doi.org/10.1116/1.579446
Growth modes of Pd, Ag, and Si thin films on B
J. Vac. Sci. Technol. A 13, 78–82 (1995)
https://doi.org/10.1116/1.579447
Auger electron spectroscopy as a real‐time compositional probe in molecular beam epitaxy
J. Vac. Sci. Technol. A 13, 83–91 (1995)
https://doi.org/10.1116/1.579448
Preparation and characterization of ZnO films by an evaporating method
J. Vac. Sci. Technol. A 13, 92–94 (1995)
https://doi.org/10.1116/1.579449
Effects of surface structures of MgO(100) single crystal substrates on ferroelectric PbTiO3 thin films grown by radio frequency sputtering
J. Vac. Sci. Technol. A 13, 95–100 (1995)
https://doi.org/10.1116/1.579392
Monte Carlo simulation of the thermalization of sputtered atoms and reflected atoms in the magnetron sputtering discharge
J. Vac. Sci. Technol. A 13, 101–112 (1995)
https://doi.org/10.1116/1.579874
Structure and ordering dynamics for Au deposition on Au(110) (1×2)
J. Vac. Sci. Technol. A 13, 117–121 (1995)
https://doi.org/10.1116/1.579422
Properties of aluminum overlayers on chemically modified TiO2(110) surfaces
J. Vac. Sci. Technol. A 13, 122–126 (1995)
https://doi.org/10.1116/1.579424
Modification of aluminum thin films
J. Vac. Sci. Technol. A 13, 127–131 (1995)
https://doi.org/10.1116/1.579425
Obtaining extremely high vacuum using sintered fine copper powder as a cryosorbent
J. Vac. Sci. Technol. A 13, 132–135 (1995)
https://doi.org/10.1116/1.579426
Electroless nickel plated aluminum alloy ConFlat flange and chamber
Fumio Watanabe; Yasuki Koyatsu; Kazunari Fujimori; Hirofumi Miki; Akinari Kasai; Takafumi Sato; Kazuo Miyamoto
J. Vac. Sci. Technol. A 13, 140–142 (1995)
https://doi.org/10.1116/1.579428
Optimum beam energy for high depth resolution secondary ion mass spectrometry
J. Vac. Sci. Technol. A 13, 143–146 (1995)
https://doi.org/10.1116/1.579429
In situ deoxidization/oxidization of a copper surface: A new concept for attaining ultralow outgassing rates from a vacuum wall
J. Vac. Sci. Technol. A 13, 147–150 (1995)
https://doi.org/10.1116/1.579430
Evidence of a simple cubic phase in electron beam vacuum evaporated indium–oxide on a glass substrate
J. Vac. Sci. Technol. A 13, 151–152 (1995)
https://doi.org/10.1116/1.579431
Real‐time monitoring of homoepitaxial and heteroepitaxial processes by p‐polarized reflectance spectroscopy
J. Vac. Sci. Technol. A 13, 153–155 (1995)
https://doi.org/10.1116/1.579432
Collimated magnetron sputter deposition with grazing angle ion bombardment
J. Vac. Sci. Technol. A 13, 156–158 (1995)
https://doi.org/10.1116/1.579433
Simple design of electron beam evaporators for 3d transition metals
J. Vac. Sci. Technol. A 13, 159–160 (1995)
https://doi.org/10.1116/1.579434
Low-temperature etching of silicon oxide and silicon nitride with hydrogen fluoride
Thorsten Lill, Mingmei Wang, et al.
Surface passivation approaches for silicon, germanium, and III–V semiconductors
Roel J. Theeuwes, Wilhelmus M. M. Kessels, et al.
Atomic layer deposition of nanofilms on porous polymer substrates: Strategies for success
Brian C. Welch, Jeanne Casetta, et al.