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Adsorption and decomposition of trichlorosilane and trichlorogermane on porous silicon and Si(100)2×1 surfaces
J. Vac. Sci. Technol. A 13, 1–10 (1995)
https://doi.org/10.1116/1.579436
Photoelectron spectroscopy from atomic layer epitaxially grown ZnTe/ZnSe heterostructures
J. Vac. Sci. Technol. A 13, 11–16 (1995)
https://doi.org/10.1116/1.579423
Studies of Ag films deposited using partially ionized beam deposition
Zhong‐Min Ren; Yuan‐Cheng Du; Mao‐Qi He; Zhi‐Feng Ying; Xia‐Xing Xiong; Fu‐Ming Li; Yi Su; Liang‐Yao Chen; W. L. Brown
J. Vac. Sci. Technol. A 13, 17–20 (1995)
https://doi.org/10.1116/1.579435
Nuclear microprobe analysis of Hg1−xCdxTe metal–semiconductor–metal detectors on substrates of GaAs and GaAs/Si
J. Vac. Sci. Technol. A 13, 21–25 (1995)
https://doi.org/10.1116/1.579437
Desorption of positive and negative fluorine ions from BaF2 surfaces by core level excitation under electron bombardment
J. Vac. Sci. Technol. A 13, 26–29 (1995)
https://doi.org/10.1116/1.579438
Adsorption and decomposition of dichlorosilane on porous silicon surfaces
J. Vac. Sci. Technol. A 13, 35–41 (1995)
https://doi.org/10.1116/1.579440
Direct analysis of contamination in submicron contact holes by thermal desorption spectroscopy
J. Vac. Sci. Technol. A 13, 42–46 (1995)
https://doi.org/10.1116/1.579441
Study of tunneling current oscillation dependence on SiO2 thickness and Si roughness at the Si/SiO2 interface
J. Vac. Sci. Technol. A 13, 47–53 (1995)
https://doi.org/10.1116/1.579442
Kinetics and mechanism of plasma oxidation of tantalum silicides
J. Vac. Sci. Technol. A 13, 54–62 (1995)
https://doi.org/10.1116/1.579443
Dry etching of palladium thin films in fluorine containing plasmas: X‐ray photoelectron spectroscopy investigation
J. Vac. Sci. Technol. A 13, 63–66 (1995)
https://doi.org/10.1116/1.579444
Reactive ion etching induced damage with gas mixtures CHF3/O2 and SF6/O2
J. Vac. Sci. Technol. A 13, 67–72 (1995)
https://doi.org/10.1116/1.579445
Atomic layer molecular beam epitaxy growth of GaAs1−xPx layers: Study of P2 incorporation by the reflectance difference technique
J. Vac. Sci. Technol. A 13, 73–77 (1995)
https://doi.org/10.1116/1.579446
Growth modes of Pd, Ag, and Si thin films on B
J. Vac. Sci. Technol. A 13, 78–82 (1995)
https://doi.org/10.1116/1.579447
Auger electron spectroscopy as a real‐time compositional probe in molecular beam epitaxy
J. Vac. Sci. Technol. A 13, 83–91 (1995)
https://doi.org/10.1116/1.579448
Preparation and characterization of ZnO films by an evaporating method
J. Vac. Sci. Technol. A 13, 92–94 (1995)
https://doi.org/10.1116/1.579449
Effects of surface structures of MgO(100) single crystal substrates on ferroelectric PbTiO3 thin films grown by radio frequency sputtering
J. Vac. Sci. Technol. A 13, 95–100 (1995)
https://doi.org/10.1116/1.579392
Monte Carlo simulation of the thermalization of sputtered atoms and reflected atoms in the magnetron sputtering discharge
J. Vac. Sci. Technol. A 13, 101–112 (1995)
https://doi.org/10.1116/1.579874
Structure and ordering dynamics for Au deposition on Au(110) (1×2)
J. Vac. Sci. Technol. A 13, 117–121 (1995)
https://doi.org/10.1116/1.579422
Properties of aluminum overlayers on chemically modified TiO2(110) surfaces
J. Vac. Sci. Technol. A 13, 122–126 (1995)
https://doi.org/10.1116/1.579424
Modification of aluminum thin films
J. Vac. Sci. Technol. A 13, 127–131 (1995)
https://doi.org/10.1116/1.579425
Obtaining extremely high vacuum using sintered fine copper powder as a cryosorbent
J. Vac. Sci. Technol. A 13, 132–135 (1995)
https://doi.org/10.1116/1.579426
Electroless nickel plated aluminum alloy ConFlat flange and chamber
Fumio Watanabe; Yasuki Koyatsu; Kazunari Fujimori; Hirofumi Miki; Akinari Kasai; Takafumi Sato; Kazuo Miyamoto
J. Vac. Sci. Technol. A 13, 140–142 (1995)
https://doi.org/10.1116/1.579428
Optimum beam energy for high depth resolution secondary ion mass spectrometry
J. Vac. Sci. Technol. A 13, 143–146 (1995)
https://doi.org/10.1116/1.579429
In situ deoxidization/oxidization of a copper surface: A new concept for attaining ultralow outgassing rates from a vacuum wall
J. Vac. Sci. Technol. A 13, 147–150 (1995)
https://doi.org/10.1116/1.579430
Evidence of a simple cubic phase in electron beam vacuum evaporated indium–oxide on a glass substrate
J. Vac. Sci. Technol. A 13, 151–152 (1995)
https://doi.org/10.1116/1.579431
Real‐time monitoring of homoepitaxial and heteroepitaxial processes by p‐polarized reflectance spectroscopy
J. Vac. Sci. Technol. A 13, 153–155 (1995)
https://doi.org/10.1116/1.579432
Collimated magnetron sputter deposition with grazing angle ion bombardment
J. Vac. Sci. Technol. A 13, 156–158 (1995)
https://doi.org/10.1116/1.579433
Simple design of electron beam evaporators for 3d transition metals
J. Vac. Sci. Technol. A 13, 159–160 (1995)
https://doi.org/10.1116/1.579434