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‘‘Oriented film growth,’’ not ‘‘epitaxy’’ in HTSC film growth
J. Vac. Sci. Technol. A 12, 269–273 (1994)
https://doi.org/10.1116/1.578866
Improved substrate temperature control for growth of twin‐free cadmium mercury telluride by molecular beam epitaxy
J. Vac. Sci. Technol. A 12, 274–277 (1994)
https://doi.org/10.1116/1.578867
Low temperature growth of ZnTe by synchroton radiation using metalorganic sources
J. Vac. Sci. Technol. A 12, 278–281 (1994)
https://doi.org/10.1116/1.578868
Photoresponse probe of the space charge distribution in ferroelectric lead zirconate titanate thin film memory capacitors
J. Vac. Sci. Technol. A 12, 295–299 (1994)
https://doi.org/10.1116/1.578871
Electron cyclotron resonance plasma source for metalorganic chemical vapor deposition of silicon oxide films
J. Vac. Sci. Technol. A 12, 300–307 (1994)
https://doi.org/10.1116/1.578872
Fluorinated diamondlike carbon films deposited from radio‐frequency glow discharge in a triode reactor
J. Vac. Sci. Technol. A 12, 308–313 (1994)
https://doi.org/10.1116/1.578873
Fluorocarbon high‐density plasmas. I. Fluorocarbon film deposition and etching using CF4 and CHF3
J. Vac. Sci. Technol. A 12, 323–332 (1994)
https://doi.org/10.1116/1.578876
Fluorocarbon high‐density plasmas. II. Silicon dioxide and silicon etching using CF4 and CHF3
J. Vac. Sci. Technol. A 12, 333–344 (1994)
https://doi.org/10.1116/1.578877
Plasma fluorination of graphite
J. Vac. Sci. Technol. A 12, 365–368 (1994)
https://doi.org/10.1116/1.579248
Cleaning of metal parts in oxygen radio frequency plasma: Process study*
J. Vac. Sci. Technol. A 12, 369–378 (1994)
https://doi.org/10.1116/1.579249
Synchrotron radiation excited etching of SiC film using reactive species generated by a microwave discharge
J. Vac. Sci. Technol. A 12, 379–383 (1994)
https://doi.org/10.1116/1.579250
Elimination of serious artifacts in temperature programmed desorption spectroscopy
J. Vac. Sci. Technol. A 12, 384–387 (1994)
https://doi.org/10.1116/1.579251
Effects of processing on electrical properties of YBa2Cu3O7 films. II. In situ deposition processes
J. Vac. Sci. Technol. A 12, 388–392 (1994)
https://doi.org/10.1116/1.579252
Thermally induced changes in TeOx thin layers
J. Vac. Sci. Technol. A 12, 393–398 (1994)
https://doi.org/10.1116/1.579253
Acceleration of high current heavy ions using a variable energy radio‐frequency quadrupole linac and measurement of the input beam emittance
J. Vac. Sci. Technol. A 12, 399–404 (1994)
https://doi.org/10.1116/1.579254
Correction of dead time effects in time‐of‐flight mass spectrometry
J. Vac. Sci. Technol. A 12, 405–410 (1994)
https://doi.org/10.1116/1.579255
Study of the structure of the Rh/Ag surface using positron annihilation induced Auger electron spectroscopy
J. Vac. Sci. Technol. A 12, 411–417 (1994)
https://doi.org/10.1116/1.579256
Photoemission study of the growth of the LaF3/Si (111) interface
J. Vac. Sci. Technol. A 12, 418–422 (1994)
https://doi.org/10.1116/1.579257
Altered layer as sensitive initial chemical state indicator*
J. Vac. Sci. Technol. A 12, 423–427 (1994)
https://doi.org/10.1116/1.579258
Angular distributions of Auger electrons from surfaces: Conclusions from full multiple‐scattering simulations
J. Vac. Sci. Technol. A 12, 428–435 (1994)
https://doi.org/10.1116/1.579259
Structural and surface characterization of ultrafine iron carbide particles generated by laser pyrolysis. I. High temperature He treatment
J. Vac. Sci. Technol. A 12, 443–451 (1994)
https://doi.org/10.1116/1.579261
Improved quantification in secondary‐ion mass spectrometry detecting MCs+ molecular ions
J. Vac. Sci. Technol. A 12, 452–456 (1994)
https://doi.org/10.1116/1.579262
Measurement of complete Auger electron emission angular distributions from β‐SiC films on Si(100)
J. Vac. Sci. Technol. A 12, 457–464 (1994)
https://doi.org/10.1116/1.579263
Infrared spectroscopic study of initial stages of ultraviolet ozone oxidation of Si(100) and (111) surfaces
J. Vac. Sci. Technol. A 12, 465–470 (1994)
https://doi.org/10.1116/1.579264
Structure and properties of titanium nitride thin films deposited at low temperatures using direct current magnetron sputtering
J. Vac. Sci. Technol. A 12, 476–483 (1994)
https://doi.org/10.1116/1.579155
CO2 laser chemical vapor deposition of silica films in a parallel configuration: A study of gas phase phenomena
J. Vac. Sci. Technol. A 12, 484–493 (1994)
https://doi.org/10.1116/1.579156
Preparation of in‐plane textured Y2O3‐doped ZrO2 thin film on polycrystalline metallic tape by modified bias sputtering
J. Vac. Sci. Technol. A 12, 501–505 (1994)
https://doi.org/10.1116/1.579158
Properties of titanium layers deposited by collimation sputtering
J. Vac. Sci. Technol. A 12, 506–508 (1994)
https://doi.org/10.1116/1.579159
Interaction of Al with oxidized Ge/Si(001): A synchrotron radiation photoelectron spectroscopy study
J. Vac. Sci. Technol. A 12, 509–512 (1994)
https://doi.org/10.1116/1.579160
X‐ray photoelectron spectroscopy investigation of interfacial interactions in the Cr/BPDA‐PDA and Ti/BPDA‐PDA systems
J. Vac. Sci. Technol. A 12, 513–522 (1994)
https://doi.org/10.1116/1.579161
Application of dynamic in situ ellipsometry to the deposition of tin‐doped indium oxide films by reactive direct‐current magnetron sputtering
J. Vac. Sci. Technol. A 12, 523–528 (1994)
https://doi.org/10.1116/1.579162
Electrical properties of radio frequency magnetron‐sputtered (BaSr)TiO3 thin films on indium tin oxide‐coated glass substrate
J. Vac. Sci. Technol. A 12, 529–532 (1994)
https://doi.org/10.1116/1.579163
In situ deposition of YBa2Cu3O7−x superconducting thin film without high pressure oxygen during film cooling*
J. Vac. Sci. Technol. A 12, 533–535 (1994)
https://doi.org/10.1116/1.579164
Measurement of the angular distribution of sputtered neutrals in a planar magnetron geometry
J. Vac. Sci. Technol. A 12, 536–541 (1994)
https://doi.org/10.1116/1.579165
Electron source brightness and degeneracy from Fresnel fringes in field emission point projection microscopy
J. Vac. Sci. Technol. A 12, 542–547 (1994)
https://doi.org/10.1116/1.579166
Tritium purification via zirconium–manganese–iron alloy getter St 909 in flow processes
J. Vac. Sci. Technol. A 12, 548–553 (1994)
https://doi.org/10.1116/1.579167
Using characterized variable reservoir helium permeation leaks to generate low flows
J. Vac. Sci. Technol. A 12, 564–567 (1994)
https://doi.org/10.1116/1.578834
Causes of nonstability and nonreproducibility in widely used Bayard–Alpert ionization gauges
J. Vac. Sci. Technol. A 12, 574–579 (1994)
https://doi.org/10.1116/1.578836
Stable and reproducible Bayard–Alpert ionization gauge
J. Vac. Sci. Technol. A 12, 580–586 (1994)
https://doi.org/10.1116/1.578837
Charging effects in measurements of high‐temperature superconductors with high‐resolution electron‐energy‐loss spectroscopy
J. Vac. Sci. Technol. A 12, 587–590 (1994)
https://doi.org/10.1116/1.578838
Compact and inexpensive quartz capillaritron source
J. Vac. Sci. Technol. A 12, 591–593 (1994)
https://doi.org/10.1116/1.578839
Effect of anode bias on the index of refraction of Al2O3 thin films deposited by dc S‐Gun magnetron reactive sputtering
J. Vac. Sci. Technol. A 12, 594–597 (1994)
https://doi.org/10.1116/1.578840
Miniature multitarget sputtering system for the in situ x‐ray study of high Tc multilayer film growth
J. Vac. Sci. Technol. A 12, 598–600 (1994)
https://doi.org/10.1116/1.578841
Plasma treated screws for ultrahigh vacuum application
J. Vac. Sci. Technol. A 12, 601–602 (1994)
https://doi.org/10.1116/1.578842