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In situ x‐ray photoemission spectroscopic studies of Al/SiO2 interface formation
J. Vac. Sci. Technol. A 12, 1–6 (1994)
https://doi.org/10.1116/1.578883
Passivation with SiO2 on HgCdTe by direct photochemical‐vapor deposition*
J. Vac. Sci. Technol. A 12, 7–11 (1994)
https://doi.org/10.1116/1.578862
Thickness determination of thin oxide layers at the bottom of contact holes of semiconductor devices by Auger electron spectroscopy
J. Vac. Sci. Technol. A 12, 12–18 (1994)
https://doi.org/10.1116/1.578907
Pb preadsorption facilitates island formation during Ge growth on Si(111)
J. Vac. Sci. Technol. A 12, 23–28 (1994)
https://doi.org/10.1116/1.578890
Metallization of Teflon PFA. I. Interactions of evaporated Cr and Al measured by x‐ray photoelectron spectroscopy
J. Vac. Sci. Technol. A 12, 29–34 (1994)
https://doi.org/10.1116/1.578900
Correlation of x‐ray photoelectron spectroscopy and Rutherford backscattering spectroscopy depth profiles on Hg1−xCdxTe native oxides
J. Vac. Sci. Technol. A 12, 35–43 (1994)
https://doi.org/10.1116/1.578901
X‐ray photoelectron spectroscopy study of x‐ray irradiated metal/fluoropolymer interfaces
J. Vac. Sci. Technol. A 12, 44–50 (1994)
https://doi.org/10.1116/1.578902
Photoemission study of evaporated CuInS2 thin films. I. Surface stoichiometry and phase segregation
J. Vac. Sci. Technol. A 12, 51–55 (1994)
https://doi.org/10.1116/1.578857
Photoemission study of evaporated CuInS2 thin films. II. Electronic surface structure
J. Vac. Sci. Technol. A 12, 56–60 (1994)
https://doi.org/10.1116/1.578858
Three‐dimensional simulation of surface evolution during growth and erosion
J. Vac. Sci. Technol. A 12, 61–68 (1994)
https://doi.org/10.1116/1.578859
Dependence of etch characteristics on charge particles as measured by Langmuir probe in a multipolar electron cyclotron resonance source
J. Vac. Sci. Technol. A 12, 69–74 (1994)
https://doi.org/10.1116/1.578860
Comparing reactive ion etching of III–V compounds in Cl2/BCl3/Ar and CCl2F2/BCl3/Ar discharges
J. Vac. Sci. Technol. A 12, 75–82 (1994)
https://doi.org/10.1116/1.578861
Low temperature radio frequency sputter deposition of TiN thin films using optical emission spectroscopy as process monitor
J. Vac. Sci. Technol. A 12, 83–89 (1994)
https://doi.org/10.1116/1.578863
Plasma‐enhanced chemical vapor deposition of a‐SiC:H films from organosilicon precursors
J. Vac. Sci. Technol. A 12, 90–96 (1994)
https://doi.org/10.1116/1.578864
Angular impact energy distributions of argon ions at the powered electrode of a helicon plasma source
J. Vac. Sci. Technol. A 12, 97–105 (1994)
https://doi.org/10.1116/1.578865
Metastable argon beam source using a surface wave sustained plasma
J. Vac. Sci. Technol. A 12, 106–113 (1994)
https://doi.org/10.1116/1.578903
Characterization of electron cyclotyron resonance microwave plasma under critical configuration of magnetic field
J. Vac. Sci. Technol. A 12, 114–119 (1994)
https://doi.org/10.1116/1.578904
Deposition of gallium oxide and indium oxide on GaAs for in situ process use by alternating supply of TEGa, TMIn, and H2O2 as surge pulses
J. Vac. Sci. Technol. A 12, 120–124 (1994)
https://doi.org/10.1116/1.578905
Improved heteroepitaxial growth of layered NbSe2 on GaAs (111)B
J. Vac. Sci. Technol. A 12, 125–129 (1994)
https://doi.org/10.1116/1.578906
Effects of plasma enhancement on the carrier‐gas‐free metalorganic chemical‐vapor deposition of oxide superconducting thin films
J. Vac. Sci. Technol. A 12, 130–134 (1994)
https://doi.org/10.1116/1.578908
Structural and morphological characterization of Nb2O5 thin films deposited by reactive sputtering
J. Vac. Sci. Technol. A 12, 135–139 (1994)
https://doi.org/10.1116/1.578909
Surface reconstructions of (001) CdTe and their role in the dynamics of evaporation and molecular‐beam epitaxy growth
J. Vac. Sci. Technol. A 12, 140–147 (1994)
https://doi.org/10.1116/1.578910
Mo–Si multilayer as soft x‐ray mirrors for the wavelengths around 20 nm region
J. Vac. Sci. Technol. A 12, 148–152 (1994)
https://doi.org/10.1116/1.578911
Selective deposition of copper by chemical vapor deposition using Cu(HFA)2
J. Vac. Sci. Technol. A 12, 153–157 (1994)
https://doi.org/10.1116/1.578912
Reactive evaporation of potassium in CO2 and the formation of bulk intermediates
J. Vac. Sci. Technol. A 12, 158–160 (1994)
https://doi.org/10.1116/1.578913
C49/C54 phase transformation during chemical vapor deposition of TiSi2
J. Vac. Sci. Technol. A 12, 161–168 (1994)
https://doi.org/10.1116/1.578914
Adhesion measurement of Ti thin films on Si substrate using internal stress in overcoated Ni films
J. Vac. Sci. Technol. A 12, 169–173 (1994)
https://doi.org/10.1116/1.578915
Reflection high‐energy electron diffraction patterns of carbide‐contaminated silicon surfaces
J. Vac. Sci. Technol. A 12, 174–178 (1994)
https://doi.org/10.1116/1.578916
Mass spectroscopic study of the cracking of trimethylgallium in a heated doser
J. Vac. Sci. Technol. A 12, 179–184 (1994)
https://doi.org/10.1116/1.578917
Adhesion durability of tantalum BPDA‐PDA polyimide interfaces
J. Vac. Sci. Technol. A 12, 185–191 (1994)
https://doi.org/10.1116/1.578918
Adhesion, surface morphology, and gas sensing characteristics of thin‐gold‐film chemical sensors
J. Vac. Sci. Technol. A 12, 192–198 (1994)
https://doi.org/10.1116/1.578880
Thermodynamic analysis of AsH3 and PH3 decomposition including subhydrides
J. Vac. Sci. Technol. A 12, 204–215 (1994)
https://doi.org/10.1116/1.578884
Photodissociation of SF6 near the F 1s absorption edge
J. Vac. Sci. Technol. A 12, 216–218 (1994)
https://doi.org/10.1116/1.578885
Purity of atomic oxygen production from heated iridium surfaces
J. Vac. Sci. Technol. A 12, 219–223 (1994)
https://doi.org/10.1116/1.578886
Characterization of heated platinum filaments as a source of atomic oxygen
J. Vac. Sci. Technol. A 12, 224–227 (1994)
https://doi.org/10.1116/1.578887
Nonlinearities in sensitivity of quadrupole partial pressure analyzers operating at higher gas pressures
J. Vac. Sci. Technol. A 12, 228–234 (1994)
https://doi.org/10.1116/1.578888
Pump down of evacuated glazing
J. Vac. Sci. Technol. A 12, 241–247 (1994)
https://doi.org/10.1116/1.578891
Proposal of a sputter‐ion pump structure
J. Vac. Sci. Technol. A 12, 248–250 (1994)
https://doi.org/10.1116/1.578892
Properties of polysilicon films deposited on amorphous substrates using reactive plasma beam deposition technique
J. Vac. Sci. Technol. A 12, 251–254 (1994)
https://doi.org/10.1116/1.578893
Modification of the PHI sample mount for multiple‐ or micropositioning for Zalar rotation
J. Vac. Sci. Technol. A 12, 265–266 (1994)
https://doi.org/10.1116/1.578898