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Multiple steady states in electron cyclotron resonance plasma reactors
J. Vac. Sci. Technol. A 11, 2883–2892 (1993)
https://doi.org/10.1116/1.578663
Study of the effect of a probe on the plasma in the source region of an electron cyclotron resonance discharge
J. Vac. Sci. Technol. A 11, 2893–2896 (1993)
https://doi.org/10.1116/1.578664
Effects of substrate bias frequency in an electron cyclotron resonance plasma reactor
J. Vac. Sci. Technol. A 11, 2897–2902 (1993)
https://doi.org/10.1116/1.578665
Copper deposition by electron cyclotron resonance plasma
W. M. Holber; J. S. Logan; H. J. Grabarz; J. T. C. Yeh; J. B. O. Caughman; A. Sugerman; F. E. Turene
J. Vac. Sci. Technol. A 11, 2903–2910 (1993)
https://doi.org/10.1116/1.578666
Direct current bias as an ion current monitor in the transformer coupled plasma etcher
J. Vac. Sci. Technol. A 11, 2911–2913 (1993)
https://doi.org/10.1116/1.578667
Photo‐enhanced chemical vapor deposition: System design considerations
J. Vac. Sci. Technol. A 11, 2914–2923 (1993)
https://doi.org/10.1116/1.578668
Reaction pathways for ArF excimer laser assisted tungsten chemical vapor deposition from a WF6–H2 gas mixture
J. Vac. Sci. Technol. A 11, 2924–2930 (1993)
https://doi.org/10.1116/1.578669
Influence of ion beam modification on the oxidation behavior of intermetallic compound Ni3Al(0.1B)
Xianghuai Liu; Zhihong Zheng; Wei Huang; Zixin Lin; Xi Wang; Genqing Yang; Shichang Zou; S. Taniguchi; T. Shibata
J. Vac. Sci. Technol. A 11, 2938–2940 (1993)
https://doi.org/10.1116/1.578671
High quality, high deposition rate SiO2 films at low temperatures using silicon fluorides and plasma assisted deposition techniques
J. Vac. Sci. Technol. A 11, 2945–2949 (1993)
https://doi.org/10.1116/1.578673
Growth kinetics of Si hemispherical grains on clean amorphous‐Si surfaces
J. Vac. Sci. Technol. A 11, 2950–2953 (1993)
https://doi.org/10.1116/1.578674
Characterization of silicon dioxide films deposited at low pressure and temperature in a helicon diffusion reactor
J. Vac. Sci. Technol. A 11, 2954–2963 (1993)
https://doi.org/10.1116/1.578675
Structure and tribology of hard carbon films synthesized by ion beam deposition
J. Vac. Sci. Technol. A 11, 2964–2969 (1993)
https://doi.org/10.1116/1.578676
Relationship of crystallographic orientation and impurities to stress, resistivity, and morphology for sputtered copper films
J. Vac. Sci. Technol. A 11, 2970–2974 (1993)
https://doi.org/10.1116/1.578677
Highly transparent and conductive group IV impurity‐doped ZnO thin films prepared by radio frequency magnetron sputtering
J. Vac. Sci. Technol. A 11, 2975–2979 (1993)
https://doi.org/10.1116/1.578678
Sustained self‐sputtering using a direct current magnetron source
J. Vac. Sci. Technol. A 11, 2980–2984 (1993)
https://doi.org/10.1116/1.578679
Influence of the plasma on substrate heating during low‐frequency reactive sputtering of AIN
J. Vac. Sci. Technol. A 11, 2989–2993 (1993)
https://doi.org/10.1116/1.578286
Temperature control and measurement for diamond single crystals in ultrahigh vacuum
J. Vac. Sci. Technol. A 11, 3002–3006 (1993)
https://doi.org/10.1116/1.578288
Material properties and tribological performance of hydrogenated sputter carbon overcoat on rigid disk
J. Vac. Sci. Technol. A 11, 3007–3013 (1993)
https://doi.org/10.1116/1.578289
Deposition system for the synthesis of modulated, ultrathin‐film composites
J. Vac. Sci. Technol. A 11, 3014–3019 (1993)
https://doi.org/10.1116/1.578290
In situ substrate temperature measurement in high‐Tc superconducting film deposition
J. Vac. Sci. Technol. A 11, 3020–3025 (1993)
https://doi.org/10.1116/1.578291
Kinetic model for the chemical vapor deposition of tungsten in the silane reduction process
J. Vac. Sci. Technol. A 11, 3040–3046 (1993)
https://doi.org/10.1116/1.578294
Vapor deposition of parylene‐F by pyrolysis of dibromotetrafluoro‐p‐xylene
J. Vac. Sci. Technol. A 11, 3047–3052 (1993)
https://doi.org/10.1116/1.578295
Predicting intrawafer film thickness uniformity in an ultralow pressure chemical vapor deposition reactor
J. Vac. Sci. Technol. A 11, 3053–3061 (1993)
https://doi.org/10.1116/1.578296
Structural and optical studies in oxygenated amorphous CdTe films
F. J. Espinoza‐Beltran; O. Zelaya; F. Sanchez‐Sinencio; J. G. Mendoza‐Alvarez; M. H. Farias; L. Baños
J. Vac. Sci. Technol. A 11, 3062–3066 (1993)
https://doi.org/10.1116/1.578297
Stress stabilization of β‐tantalum and its crystal structure
Kazuaki Kondo; Masaaki Nakabayashi; Ken’ichi Kawakami; Tatsuo Chijimatsu; Masafumi Nakaishi; Masao Yamada; Masaki Yamabe; Kenji Sugishima
J. Vac. Sci. Technol. A 11, 3067–3071 (1993)
https://doi.org/10.1116/1.578298
Repair of a liquid metal ion emitter by a liquid metal ion emitter
J. Vac. Sci. Technol. A 11, 3072–3075 (1993)
https://doi.org/10.1116/1.578299
Interface studies between transition metals and poly(vilylidene fluoride)
J. Vac. Sci. Technol. A 11, 3076–3080 (1993)
https://doi.org/10.1116/1.578300
Evolution of atomic‐scale surface structures during ion bombardment: A fractal simulation
J. Vac. Sci. Technol. A 11, 3085–3091 (1993)
https://doi.org/10.1116/1.578302
Magnetic force microscope combined with a scanning electron microscope
J. Vac. Sci. Technol. A 11, 3092–3098 (1993)
https://doi.org/10.1116/1.578303
Modification of the x‐ray photoemission spectrum of in situ deposited thin films of Y1Ba2Cu3O7−y for various oxygen treatments
J. Vac. Sci. Technol. A 11, 3099–3105 (1993)
https://doi.org/10.1116/1.578304
Temperature‐dependent x‐ray photoelectron diffraction of Pb(100): Experimental results and the single‐scattering cluster model
J. Vac. Sci. Technol. A 11, 3106–3110 (1993)
https://doi.org/10.1116/1.578305
Measurement of CO pressures in the ultrahigh vacuum regime using resonance‐enhanced multiphoton‐ionization time‐of‐flight mass spectroscopy
J. Vac. Sci. Technol. A 11, 3111–3120 (1993)
https://doi.org/10.1116/1.578306
Hybrid Cu–Al beam pipe for KEK B factory
J. Vac. Sci. Technol. A 11, 3121–3125 (1993)
https://doi.org/10.1116/1.578307
Perspectives and limitations of vacuum microtubes
J. Vac. Sci. Technol. A 11, 3126–3129 (1993)
https://doi.org/10.1116/1.578460
Film deposition with a facing magnets magnetron sputtering method
J. Vac. Sci. Technol. A 11, 3130–3132 (1993)
https://doi.org/10.1116/1.578461
Calibration of type‐C thermocouples to liquid helium temperature
J. Vac. Sci. Technol. A 11, 3133–3134 (1993)
https://doi.org/10.1116/1.578462
A permanent, retractable screen for charge neutralization of insulating specimens during x‐ray photoelectron spectroscopy analysis
J. Vac. Sci. Technol. A 11, 3135–3137 (1993)
https://doi.org/10.1116/1.578463
Machine-learning-enabled on-the-fly analysis of RHEED patterns during thin film deposition by molecular beam epitaxy
Tiffany C. Kaspar, Sarah Akers, et al.
Recent trends in thermal atomic layer deposition chemistry
Georgi Popov, Miika Mattinen, et al.
Low-resistivity molybdenum obtained by atomic layer deposition
Kees van der Zouw, Bernhard Y. van der Wel, et al.