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Alternating current scanning tunneling spectroscopy of self‐assembled monolayers on gold

S. J. Stranick; P. S. Weiss; A. N. Parikh; D. L. Allara

J. Vac. Sci. Technol. A 11, 739–741 (1993) https://doi.org/10.1116/1.578339

Abstract

View articletitled, Alternating current scanning tunneling spectroscopy of self‐assembled monolayers on gold

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Correlative imaging in scanning near‐field optical microscopy

M. Vaez‐Iravani; R. Toledo‐Crow; Y. Chen

J. Vac. Sci. Technol. A 11, 742–747 (1993) https://doi.org/10.1116/1.578340

Abstract

View articletitled, Correlative imaging in scanning near‐field optical microscopy

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Fabrication of quantum dot structures using aerosol deposition and plasma etching techniques

I. Maximov; A. Gustafsson; H.‐C. Hansson; L. Samuelson; W. Seifert; A. Wiedensohler

J. Vac. Sci. Technol. A 11, 748–753 (1993) https://doi.org/10.1116/1.578341

Abstract

View articletitled, Fabrication of quantum dot structures using aerosol deposition and plasma etching techniques

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Scanning tunneling microscope‐based nanostructure fabrication system*

J. Schneir; J. A. Dagata; H. H. Harary

J. Vac. Sci. Technol. A 11, 754–757 (1993) https://doi.org/10.1116/1.578342

Abstract

View articletitled, Scanning tunneling microscope‐based nanostructure fabrication system*

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Force microscopy with actively stabilized differential fiber detection mechanism

M. Nonnenmacher; M. Vaez‐Iravani; H. K. Wickramasinghe

J. Vac. Sci. Technol. A 11, 758–762 (1993) https://doi.org/10.1116/1.578343

Abstract

View articletitled, Force microscopy with actively stabilized differential fiber detection mechanism

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Effects of HF solution in the electroless deposition process on silicon surfaces

L. A. Nagahara; T. Ohmori; K. Hashimoto; A. Fujishima

J. Vac. Sci. Technol. A 11, 763–767 (1993) https://doi.org/10.1116/1.578344

Abstract

View articletitled, Effects of HF solution in the electroless deposition process on silicon surfaces

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Tunnel current controlled atomic force microscope designs

H. S. Kim; P. J. Bryant

J. Vac. Sci. Technol. A 11, 768–772 (1993) https://doi.org/10.1116/1.578345

Abstract

View articletitled, Tunnel current controlled atomic force microscope designs

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Atomic force microscopy and manipulation of living glial cells

V. Parpura; P. G. Haydon; D. S. Sakaguchi; E. Henderson

J. Vac. Sci. Technol. A 11, 773–775 (1993) https://doi.org/10.1116/1.578346

Abstract

View articletitled, Atomic force microscopy and manipulation of living glial cells

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Comparative scanning probe microscopy study of the surface morphology of Au films grown from the vapor onto glass, fused silica, and muscovite mica

J. A. DeRose; D. B. Lampner; S. M. Lindsay; N. J. Tao

J. Vac. Sci. Technol. A 11, 776–780 (1993) https://doi.org/10.1116/1.578347

Abstract

View articletitled, Comparative scanning probe microscopy study of the surface morphology of Au films grown from the vapor onto glass, fused silica, and muscovite mica

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Scanning probe and transmission electron microscopy observations of cobalt naphthalocyanine molecules deposited onto a NaCl substrate

L. A. Nagahara; A. Manivannan; H. Yanagi; M. Toriida; M. Ashida; Y. Maruyama; K. Hashimoto; A. Fujishima

J. Vac. Sci. Technol. A 11, 781–785 (1993) https://doi.org/10.1116/1.578348

Abstract

View articletitled, Scanning probe and transmission electron microscopy observations of cobalt naphthalocyanine molecules deposited onto a NaCl substrate

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Density of states and hot electron effects in ballistic electron emission spectroscopy

R. Ludeke

J. Vac. Sci. Technol. A 11, 786–791 (1993) https://doi.org/10.1116/1.578349

Abstract

View articletitled, Density of states and hot electron effects in ballistic electron emission spectroscopy

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Carrier injection and scanning tunneling microscopy at the Si(111)‐2×1 surface

David G. Cahill; R. M. Feenstra

J. Vac. Sci. Technol. A 11, 792–796 (1993) https://doi.org/10.1116/1.578350

Abstract

View articletitled, Carrier injection and scanning tunneling microscopy at the Si(111)‐2×1 surface

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Micromachined tunneling displacement transducers for physical sensors

T. W. Kenny; W. J. Kaiser; J. A. Podosek; H. K. Rockstad; J. K. Reynolds; E. C. Vote

J. Vac. Sci. Technol. A 11, 797–802 (1993) https://doi.org/10.1116/1.578351

Abstract

View articletitled, Micromachined tunneling displacement transducers for physical sensors

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Rolling friction in a linear microactuator

R. Ghodssi; D. D. Denton; A. A. Seireg; B. Howland

J. Vac. Sci. Technol. A 11, 803–807 (1993) https://doi.org/10.1116/1.578308

Abstract

View articletitled, Rolling friction in a linear microactuator

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Scanning tunneling microscopy and atomic force microscopy studies of biomaterials at a liquid–solid interface

S. M. Lindsay; Y. L. Lyubchenko; N. J. Tao; Y. Q. Li; P. I. Oden; J. A. DeRose; J. Pan

J. Vac. Sci. Technol. A 11, 808–815 (1993) https://doi.org/10.1116/1.578309

Abstract

View articletitled, Scanning tunneling microscopy and atomic force microscopy studies of biomaterials at a liquid–solid interface

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Imaging entire genetically functional DNA molecules with the scanning tunneling microscope

D. P. Allison; T. Thundat; K. Bruce Jacobson; L. A. Bottomley; R. J. Warmack

J. Vac. Sci. Technol. A 11, 816–819 (1993) https://doi.org/10.1116/1.578310

Abstract

View articletitled, Imaging entire genetically functional DNA molecules with the scanning tunneling microscope

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Visualization of circular DNA molecules labeled with colloidal gold spheres using atomic force microscopy

Wen‐Ling Shaiu; James Vesenka; Daniel Jondle; Eric Henderson; Drena D. Larson

J. Vac. Sci. Technol. A 11, 820–823 (1993) https://doi.org/10.1116/1.578311

Abstract

View articletitled, Visualization of circular DNA molecules labeled with colloidal gold spheres using atomic force microscopy

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Atomic force microscopy of single‐ and double‐stranded deoxyribonucleic acid

T. Thundat; D. P. Allison; R. J. Warmack; M. J. Doktycz; K. Bruce Jacobson; G. M. Brown

J. Vac. Sci. Technol. A 11, 824–828 (1993) https://doi.org/10.1116/1.578312

Abstract

View articletitled, Atomic force microscopy of single‐ and double‐stranded deoxyribonucleic acid

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Deposition, characterization, and device development in diamond, silicon carbide, and gallium nitride thin films

Robert F. Davis

J. Vac. Sci. Technol. A 11, 829–837 (1993) https://doi.org/10.1116/1.578313

Abstract

View articletitled, Deposition, characterization, and device development in diamond, silicon carbide, and gallium nitride thin films

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Laser‐assisted nitridation of GaAs: Mechanisms

X.‐Y. Zhu; M. Wolf; J. M. White

J. Vac. Sci. Technol. A 11, 838–840 (1993) https://doi.org/10.1116/1.578314

Abstract

View articletitled, Laser‐assisted nitridation of GaAs: Mechanisms

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Temperature‐dependent composition, ordering, and band bending at GaP(100) surfaces

I. M. Vitomirov; A. Raisanen; L. J. Brillson; C. L. Lin; D. T. McInturff; P. D. Kirchner; J. M. Woodall

J. Vac. Sci. Technol. A 11, 841–847 (1993) https://doi.org/10.1116/1.578315

Abstract

View articletitled, Temperature‐dependent composition, ordering, and band bending at GaP(100) surfaces

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Calculation of the Schottky barrier height at the Al/GaAs(001) heterojunction: Effect of interfacial atomic relaxations

R. G. Dandrea; C. B. Duke

J. Vac. Sci. Technol. A 11, 848–853 (1993) https://doi.org/10.1116/1.578316

Abstract

View articletitled, Calculation of the Schottky barrier height at the Al/GaAs(001) heterojunction: Effect of interfacial atomic relaxations

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Schottky barrier formation at nonreactive interfaces: Ga/GaAs(100) and Pb/GaAs(100)

W. Chen; D. Mao; M. Santos; M. Shayegan; A. Kahn; P. S. Mangat; P. Soukiassian; L. T. Florez; J. P. Harbison

J. Vac. Sci. Technol. A 11, 854–859 (1993) https://doi.org/10.1116/1.578317

Abstract

View articletitled, Schottky barrier formation at nonreactive interfaces: Ga/GaAs(100) and Pb/GaAs(100)

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Schottky barrier height control at epitaxial NiAl/GaAs(001) interfaces by means of variable band gap interlayers

Scott A. Chambers

J. Vac. Sci. Technol. A 11, 860–868 (1993) https://doi.org/10.1116/1.578318

Abstract

View articletitled, Schottky barrier height control at epitaxial NiAl/GaAs(001) interfaces by means of variable band gap interlayers

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Growth of III–V materials by metalorganic molecular‐beam epitaxy

C. R. Abernathy

J. Vac. Sci. Technol. A 11, 869–875 (1993) https://doi.org/10.1116/1.578319

Abstract

View articletitled, Growth of III–V materials by metalorganic molecular‐beam epitaxy

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Mechanism of carbon incorporation during GaAs epitaxy

J. R. Creighton; B. A. Bansenauer; T. Huett; J. M. White

J. Vac. Sci. Technol. A 11, 876–883 (1993) https://doi.org/10.1116/1.578320

Abstract

View articletitled, Mechanism of carbon incorporation during GaAs epitaxy

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Chemical beam epitaxy and structural analysis of InAs/InP strained single‐ and multiquantum well heterostructures

A. Freundlich; A. Bensaoula; A. H. Bensaoula; V. Rossignol

J. Vac. Sci. Technol. A 11, 884–888 (1993) https://doi.org/10.1116/1.578321

Abstract

View articletitled, Chemical beam epitaxy and structural analysis of InAs/InP strained single‐ and multiquantum well heterostructures

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Transport in strain relaxed In_0.15Al_0.85As/In_0.17Ga_0.83As heterojunctions

J. M. Fernández; Jianhui Chen; H. H. Wieder

J. Vac. Sci. Technol. A 11, 889–892 (1993) https://doi.org/10.1116/1.578322

Abstract

View articletitled, Transport in strain relaxed In0.15Al0.85As/In0.17Ga0.83As heterojunctions

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Effects of thin film deposition rates, and process‐induced interfacial layers on the optical properties of plasma‐deposited SiO₂/Si₃N₄ Bragg reflectors

D. J. Stephens; S. S. He; G. Lucovsky; H. Mikkelsen; K. Leo; H. Kurz

J. Vac. Sci. Technol. A 11, 893–899 (1993) https://doi.org/10.1116/1.578323

Abstract

View articletitled, Effects of thin film deposition rates, and process‐induced interfacial layers on the optical properties of plasma‐deposited SiO2/Si3N4 Bragg reflectors

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In situ investigation of temperature and bias dependent effects on the oxide growth of Si and Ge in an electron cyclotron resonance

Y. Z. Hu; Y. Q. Wang; M. Li; J. Joseph; E. A. Irene

J. Vac. Sci. Technol. A 11, 900–904 (1993) https://doi.org/10.1116/1.578324

Abstract

View articletitled, In situ investigation of temperature and bias dependent effects on the oxide growth of Si and Ge in an electron cyclotron resonance

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Sequential deposition of SiO₂ and poly‐Si in isolation trenches

Thomas E. Zirkle; Syd R. Wilson; Sam L. Sundaram; Timothy S. Cale; Gregory B. Raupp

J. Vac. Sci. Technol. A 11, 905–910 (1993) https://doi.org/10.1116/1.578325

Abstract

View articletitled, Sequential deposition of SiO2 and poly‐Si in isolation trenches

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Influence of surface contaminants on W film growth on Si(100) from WF₆

S. L. Lantz; W. K. Ford; A. E. Bell; D. Danielson

J. Vac. Sci. Technol. A 11, 911–916 (1993) https://doi.org/10.1116/1.578326

Abstract

View articletitled, Influence of surface contaminants on W film growth on Si(100) from WF6

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Interface sharpness during the initial stages of growth of thin, short‐period III–V superlattices

J. G. Pellegrino; S. B. Qadri; C. M. Cotell; P. M. Amirtharaj; N. V. Nguyen; J. Comas

J. Vac. Sci. Technol. A 11, 917–922 (1993) https://doi.org/10.1116/1.578327

Abstract

View articletitled, Interface sharpness during the initial stages of growth of thin, short‐period III–V superlattices

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Model calculations of optical properties for disordered GaAs/AlAs superlattices

J. Strozier; Y. A. Zhang; C. Horton; A. Ignatiev; H. D. Shih

J. Vac. Sci. Technol. A 11, 923–928 (1993) https://doi.org/10.1116/1.578328

Abstract

View articletitled, Model calculations of optical properties for disordered GaAs/AlAs superlattices

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Geometric and electronic structure of epitaxial iron silicides

J. Alvarez; A. L. Vázquez de Parga; J. J. Hinarejos; J. de la Figuera; E. G. Michel; C. Ocal; R. Miranda

J. Vac. Sci. Technol. A 11, 929–933 (1993) https://doi.org/10.1116/1.578329

Abstract

View articletitled, Geometric and electronic structure of epitaxial iron silicides

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In situ internal reflection infrared study of aqueous hydrofluoric acid and ultraviolet/ozone treated silicon (100) surfaces

L. Zazzera; J. F. Evans

J. Vac. Sci. Technol. A 11, 934–939 (1993) https://doi.org/10.1116/1.578571

Abstract

View articletitled, In situ internal reflection infrared study of aqueous hydrofluoric acid and ultraviolet/ozone treated silicon (100) surfaces

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Reaction of NH₄F/HF solutions on Si (100) and Si (111) surfaces

D. Gräf; S. Bauer‐Mayer; A. Schnegg

J. Vac. Sci. Technol. A 11, 940–944 (1993) https://doi.org/10.1116/1.578572

Abstract

View articletitled, Reaction of NH4F/HF solutions on Si (100) and Si (111) surfaces

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Effects of predeposition HF/NH₄F treatments on the electrical properties of SiO₂/Si structures formed by low‐temperature plasma‐assisted oxidation and deposition processes

T. Yasuda; Y. Ma; Y. L. Chen; G. Lucovsky; D. Maher

J. Vac. Sci. Technol. A 11, 945–951 (1993) https://doi.org/10.1116/1.578573

Abstract

View articletitled, Effects of predeposition HF/NH4F treatments on the electrical properties of SiO2/Si structures formed by low‐temperature plasma‐assisted oxidation and deposition processes

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Formation of device‐quality metal–insulator–semiconductor structures with oxide–nitride–oxide dielectrics by low‐temperature plasma‐assisted processing, combined with high‐temperature rapid thermal annealing

Y. Ma; T. Yasuda; G. Lucovsky

J. Vac. Sci. Technol. A 11, 952–958 (1993) https://doi.org/10.1116/1.578574

Abstract

View articletitled, Formation of device‐quality metal–insulator–semiconductor structures with oxide–nitride–oxide dielectrics by low‐temperature plasma‐assisted processing, combined with high‐temperature rapid thermal annealing

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Oxidation of silicon with a hot oxygen beam

Tetsuo Ono; Susumu Hiraoka; Keizo Suzuki

J. Vac. Sci. Technol. A 11, 959–963 (1993) https://doi.org/10.1116/1.578575

Abstract

View articletitled, Oxidation of silicon with a hot oxygen beam

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Second‐harmonic generation in Si–SiO₂ heterostructures formed by chemical, thermal, and plasma‐assisted oxidation and deposition processes

C. H. Bjorkman; C. E. Shearon, Jr.; Y. Ma; T. Yasuda; G. Lucovsky; U. Emmerichs; C. Meyer; K. Leo; H. Kurz

J. Vac. Sci. Technol. A 11, 964–970 (1993) https://doi.org/10.1116/1.578576

Abstract

View articletitled, Second‐harmonic generation in Si–SiO2 heterostructures formed by chemical, thermal, and plasma‐assisted oxidation and deposition processes

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Effects of Ar⁺ sputtering and thermal annealing on optical scatter from Si(100) and Si(111)

M. R. Cohen; R. J. Simonson; M. M. Altamirano; K. L. Critchfield; W. T. Kemp; J. A. Meinhardt

J. Vac. Sci. Technol. A 11, 971–975 (1993) https://doi.org/10.1116/1.578577

Abstract

View articletitled, Effects of Ar+ sputtering and thermal annealing on optical scatter from Si(100) and Si(111)

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Virtual interface method for in situ ellipsometry of films grown on unknown substrates

F. K. Urban, III; M. F. Tabet

J. Vac. Sci. Technol. A 11, 976–980 (1993) https://doi.org/10.1116/1.578578

Abstract

View articletitled, Virtual interface method for in situ ellipsometry of films grown on unknown substrates

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Adsorption of Au on InSb(100): A scanning tunneling microscopy study

M. O. Schweitzer; F. M. Leibsle; T. S. Jones; C. F. McConville; N. V. Richardson

J. Vac. Sci. Technol. A 11, 981–984 (1993) https://doi.org/10.1116/1.578579

Abstract

View articletitled, Adsorption of Au on InSb(100): A scanning tunneling microscopy study

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Electrical and optical characterization of metal/n‐InP interfaces formed by a cryogenic process in high vacuum

Z. Q. Shi; W. A. Anderson

J. Vac. Sci. Technol. A 11, 985–989 (1993) https://doi.org/10.1116/1.578580

Abstract

View articletitled, Electrical and optical characterization of metal/n‐InP interfaces formed by a cryogenic process in high vacuum

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Electrical and chemical stability of Al/SiN_x/InP–metal–insulator– semiconductor diodes with gas phase polysulfide exposure on InP

R. W. M. Kwok; W. M. Lau; D. Landheer; S. Ingrey

J. Vac. Sci. Technol. A 11, 990–995 (1993) https://doi.org/10.1116/1.578581

Abstract

View articletitled, Electrical and chemical stability of Al/SiNx/InP–metal–insulator– semiconductor diodes with gas phase polysulfide exposure on InP

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Electrical and optical properties of ion beam sputtered ZnO:Al films as a function of film thickness

Y. Qu; T. A. Gessert; K. Ramanathan; R. G. Dhere; R. Noufi; T. J. Coutts

J. Vac. Sci. Technol. A 11, 996–1000 (1993) https://doi.org/10.1116/1.578582

Abstract

View articletitled, Electrical and optical properties of ion beam sputtered ZnO:Al films as a function of film thickness

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Preparation of Sb/GaSb{111}‐oriented multilayer structures using molecular‐beam epitaxy and migration enhanced epitaxy

W. C. Wang; J. A. Dura; J. T. Zborowski; A. Vigliante; H. C. Chen; T. D. Golding; J. R. Meyer

J. Vac. Sci. Technol. A 11, 1001–1005 (1993) https://doi.org/10.1116/1.578803

Abstract

View articletitled, Preparation of Sb/GaSb{111}‐oriented multilayer structures using molecular‐beam epitaxy and migration enhanced epitaxy

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Selective regrowth of III–V epitaxial layers by low pressure organometallic vapor phase epitaxy using CCl₄

W. S. Hobson; S. J. Pearton; J. L. Lopata

J. Vac. Sci. Technol. A 11, 1006–1010 (1993) https://doi.org/10.1116/1.578804

Abstract

View articletitled, Selective regrowth of III–V epitaxial layers by low pressure organometallic vapor phase epitaxy using CCl4

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Minority carrier lifetimes in molecular beam epitaxy grown Al_xGa_1−xAs/GaAs double heterostructures doped with aluminum

P. Sheldon; B. M. Keyes; R. K. Ahrenkiel; S. E. Asher

J. Vac. Sci. Technol. A 11, 1011–1015 (1993) https://doi.org/10.1116/1.578805

Abstract

View articletitled, Minority carrier lifetimes in molecular beam epitaxy grown AlxGa1−xAs/GaAs double heterostructures doped with aluminum

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Implant‐damage isolation of InP and InGaAsP

U. G. Akano; I. V. Mitchell; F. R. Shepherd; C. J. Miner; R. Rousina

J. Vac. Sci. Technol. A 11, 1016–1021 (1993) https://doi.org/10.1116/1.578806

Abstract

View articletitled, Implant‐damage isolation of InP and InGaAsP

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Surface type conversion of InP by H₂S plasma exposure: A photoemission investigation

Art J. Nelson; Sean P. Frigo; Richard Rosenberg

J. Vac. Sci. Technol. A 11, 1022–1027 (1993) https://doi.org/10.1116/1.578807

Abstract

View articletitled, Surface type conversion of InP by H2S plasma exposure: A photoemission investigation

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Thermal effects on the growth of SiO₂ on GaAs(100) by reduction of native oxides

I. Jiménez; F. J. Palomares; J. Avila; M. T. Cuberes; F. Soria; J. L. Sacedón; K. Horn

J. Vac. Sci. Technol. A 11, 1028–1032 (1993) https://doi.org/10.1116/1.578808

Abstract

View articletitled, Thermal effects on the growth of SiO2 on GaAs(100) by reduction of native oxides

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Electron and hole spin lifetimes in Zn_1−xMn_xSe and Zn_1−yFe_ySe based heterostructures

B. T. Jonker; J. Warnock; L. P. Fu; W. Y. Yu; W. C. Chou; A. Petrou

J. Vac. Sci. Technol. A 11, 1033–1038 (1993) https://doi.org/10.1116/1.578809

Abstract

View articletitled, Electron and hole spin lifetimes in Zn1−xMnxSe and Zn1−yFeySe based heterostructures

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Effects of chlorine based gettering on the electrical properties of rapid thermal oxidation/nitridation dielectric films

Youn Tae Kim; Chi Hoon Jun; Sang‐Koo Chung

J. Vac. Sci. Technol. A 11, 1039–1043 (1993) https://doi.org/10.1116/1.578810

Abstract

View articletitled, Effects of chlorine based gettering on the electrical properties of rapid thermal oxidation/nitridation dielectric films

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Epitaxial bilayer growth of CaF₂(111)/Pd(111) on CaF₂(111) substrates

B. H. Jo; R. W. Vook

J. Vac. Sci. Technol. A 11, 1044–1047 (1993) https://doi.org/10.1116/1.578438

Abstract

View articletitled, Epitaxial bilayer growth of CaF2(111)/Pd(111) on CaF2(111) substrates

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Photoemission study of diamond (100) surface

J. Wu; R. Cao; X. Yang; P. Pianetta; I. Lindau

J. Vac. Sci. Technol. A 11, 1048–1051 (1993) https://doi.org/10.1116/1.578439

Abstract

View articletitled, Photoemission study of diamond (100) surface

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On the nature of zero temperature coefficient of resistance of RuO₂ thin film resistor formation using in situ annealing

Q. X. Jia; K. L. Jiao; W. A. Anderson; F. M. Collins

J. Vac. Sci. Technol. A 11, 1052–1055 (1993) https://doi.org/10.1116/1.578440

Abstract

View articletitled, On the nature of zero temperature coefficient of resistance of RuO2 thin film resistor formation using in situ annealing

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Auger analysis of chromium films evaporated on polyimide

Jane G. Jinkins; Robert E. Davis

J. Vac. Sci. Technol. A 11, 1056–1060 (1993) https://doi.org/10.1116/1.578441

Abstract

View articletitled, Auger analysis of chromium films evaporated on polyimide

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Do we need a new methodology for GaAs passivation?

A. M. Green; W. E. Spicer

J. Vac. Sci. Technol. A 11, 1061–1069 (1993) https://doi.org/10.1116/1.578442

Abstract

View articletitled, Do we need a new methodology for GaAs passivation?

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Scanning tunneling microscopy of passivated gallium arsenide under ambient conditions

J. A. Dagata; W. Tseng; R. M. Silver

J. Vac. Sci. Technol. A 11, 1070–1074 (1993) https://doi.org/10.1116/1.578443

Abstract

View articletitled, Scanning tunneling microscopy of passivated gallium arsenide under ambient conditions

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Photoellipsometry determination of surface Fermi level in GaAs (100)

Yi‐Ming Xiong; Paul G. Snyder; John A. Woollam

J. Vac. Sci. Technol. A 11, 1075–1082 (1993) https://doi.org/10.1116/1.578444

Abstract

View articletitled, Photoellipsometry determination of surface Fermi level in GaAs (100)

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Chemical and electrochemical treatments of GaAs with Na₂S and (NH₄)₂S solutions: A surface chemical study

J. Yota; V. A. Burrows

J. Vac. Sci. Technol. A 11, 1083–1088 (1993) https://doi.org/10.1116/1.578445

Abstract

View articletitled, Chemical and electrochemical treatments of GaAs with Na2S and (NH4)2S solutions: A surface chemical study

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Analysis of GaAs(100) surfaces prepared with various wet and in situ sample treatments

X.‐S. Wang; K. W. Self; R. Maboudian; C. Huang; V. Bressler‐Hill; W. H. Weinberg

J. Vac. Sci. Technol. A 11, 1089–1093 (1993) https://doi.org/10.1116/1.578446

Abstract

View articletitled, Analysis of GaAs(100) surfaces prepared with various wet and in situ sample treatments

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Plasma passivation of gallium arsenide*

J. S. Herman; F. L. Terry, Jr.

J. Vac. Sci. Technol. A 11, 1094–1098 (1993) https://doi.org/10.1116/1.578447

Abstract

View articletitled, Plasma passivation of gallium arsenide*

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Scanning tunneling microscopy study of the ambient oxidation of passivated GaAs(100) surfaces

P. Moriarty; B. Murphy; G. Hughes

J. Vac. Sci. Technol. A 11, 1099–1105 (1993) https://doi.org/10.1116/1.578448

Abstract

View articletitled, Scanning tunneling microscopy study of the ambient oxidation of passivated GaAs(100) surfaces

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Control of As diffusion using ultrathin metal passivating layers at GaAs(100) surfaces

A. Raisanen; I. M. Vitomirov; L. J. Brillson; P. D. Kirchner; G. D. Pettit; J. M. Woodall

J. Vac. Sci. Technol. A 11, 1106–1113 (1993) https://doi.org/10.1116/1.578449

Abstract

View articletitled, Control of As diffusion using ultrathin metal passivating layers at GaAs(100) surfaces

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Model for charge movement after the radio frequency excitation is extinguished

Lawrence J. Overzet

J. Vac. Sci. Technol. A 11, 1114–1118 (1993) https://doi.org/10.1116/1.578450

Abstract

View articletitled, Model for charge movement after the radio frequency excitation is extinguished

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Growth and morphology of carbon grains

B. Ganguly; A. Garscadden; J. Williams; P. Haaland

J. Vac. Sci. Technol. A 11, 1119–1125 (1993) https://doi.org/10.1116/1.578451

Abstract

View articletitled, Growth and morphology of carbon grains

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Particulate temperature in radio frequency glow discharges

J. E. Daugherty; D. B. Graves

J. Vac. Sci. Technol. A 11, 1126–1131 (1993) https://doi.org/10.1116/1.578452

Abstract

View articletitled, Particulate temperature in radio frequency glow discharges

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Trapping and behavior of particulates in a radio frequency magnetron plasma etching tool

Gary S. Selwyn; Kurt L. Haller; Edward F. Patterson

J. Vac. Sci. Technol. A 11, 1132–1135 (1993) https://doi.org/10.1116/1.578453

Abstract

View articletitled, Trapping and behavior of particulates in a radio frequency magnetron plasma etching tool

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Computer calculation of neutral–radical densities in a CF₄ electron cyclotron resonance plasma processing system

K. A. Ashtiani; J. L. Shohet; R. E. P. Harvey

J. Vac. Sci. Technol. A 11, 1136–1141 (1993) https://doi.org/10.1116/1.578454

Abstract

View articletitled, Computer calculation of neutral–radical densities in a CF4 electron cyclotron resonance plasma processing system

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Bias voltage diagnostics during oxide etch in Drytek 384T

S. C. McNevin; D. J. Vitkavage; C. N. Bredbenner

J. Vac. Sci. Technol. A 11, 1142–1144 (1993) https://doi.org/10.1116/1.578455

Abstract

View articletitled, Bias voltage diagnostics during oxide etch in Drytek 384T

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Automating the analysis of Langmuir probe traces: Construction of an algorithm and sensitivity analysis for probe traces from an electron cyclotron resonance plasma source

J. B. Friedmann; C. Ritter; S. Bisgaard; J. L. Shohet

J. Vac. Sci. Technol. A 11, 1145–1151 (1993) https://doi.org/10.1116/1.578456

Abstract

View articletitled, Automating the analysis of Langmuir probe traces: Construction of an algorithm and sensitivity analysis for probe traces from an electron cyclotron resonance plasma source

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Double Langmuir probe diagnostic of a resonant cavity microwave discharge

W. McColl; C. Brooks; M. L. Brake

J. Vac. Sci. Technol. A 11, 1152–1155 (1993) https://doi.org/10.1116/1.578457

Abstract

View articletitled, Double Langmuir probe diagnostic of a resonant cavity microwave discharge

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Reactive ion etching of crystalline silicon using NF₃ diluted with H₂

A. J. Sidhwa; F. C. Goh; H. A. Naseem; W. D. Brown

J. Vac. Sci. Technol. A 11, 1156–1160 (1993) https://doi.org/10.1116/1.578458

Abstract

View articletitled, Reactive ion etching of crystalline silicon using NF3 diluted with H2

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Measurement of electron swarm parameters in GeH₄–Ar mixtures

H. Soejima; Y. Nakamura

J. Vac. Sci. Technol. A 11, 1161–1164 (1993) https://doi.org/10.1116/1.578459

Abstract

View articletitled, Measurement of electron swarm parameters in GeH4–Ar mixtures

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Experimental modeling of inductive discharges

Gaétan Chevalier; Francis F. Chen

J. Vac. Sci. Technol. A 11, 1165–1171 (1993) https://doi.org/10.1116/1.578488

Abstract

View articletitled, Experimental modeling of inductive discharges

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Plasma characterization and process control diagnostics

N. Hershkowitz; H. L. Maynard

J. Vac. Sci. Technol. A 11, 1172–1178 (1993) https://doi.org/10.1116/1.578489

Abstract

View articletitled, Plasma characterization and process control diagnostics

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In situ spectral ellipsometry for real‐time thickness measurement: Etching multilayer stacks

Steven A. Henck; Walter M. Duncan; Lee M. Lowenstein; Stephanie Watts Butler

J. Vac. Sci. Technol. A 11, 1179–1185 (1993) https://doi.org/10.1116/1.578490

Abstract

View articletitled, In situ spectral ellipsometry for real‐time thickness measurement: Etching multilayer stacks

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X‐ray and vacuum ultraviolet imaging for electron cyclotron resonance processing plasmas

K. H. Chew; J. L. Shohet; T. J. Castagna; K. L. Seaward; F. F. Mertz

J. Vac. Sci. Technol. A 11, 1186–1192 (1993) https://doi.org/10.1116/1.578491

Abstract

View articletitled, X‐ray and vacuum ultraviolet imaging for electron cyclotron resonance processing plasmas

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Measurements of neutral species in low pressure C₂F₆ discharges using diode laser absorption spectroscopy

H. C. Sun; V. Patel; E. A. Whittaker; B. Singh; J. H. Thomas, III

J. Vac. Sci. Technol. A 11, 1193–1198 (1993) https://doi.org/10.1116/1.578492

Abstract

View articletitled, Measurements of neutral species in low pressure C2F6 discharges using diode laser absorption spectroscopy

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Langmuir probe measurements of electron temperature and density scaling in multidipole radio frequency plasmas

C. Lai; R. A. Breun; P. W. Sandstrom; A. E. Wendt; N. Hershkowitz; R. Claude Woods

J. Vac. Sci. Technol. A 11, 1199–1205 (1993) https://doi.org/10.1116/1.578493

Abstract

View articletitled, Langmuir probe measurements of electron temperature and density scaling in multidipole radio frequency plasmas

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Etching of Si with Cl₂ using an electron cyclotron resonance source

K. T. Sung; S. W. Pang

J. Vac. Sci. Technol. A 11, 1206–1210 (1993) https://doi.org/10.1116/1.578494

Abstract

View articletitled, Etching of Si with Cl2 using an electron cyclotron resonance source

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Plasma etching: An enabling technology for gigahertz silicon integrated circuits

Alexander M. Voshchenkov

J. Vac. Sci. Technol. A 11, 1211–1220 (1993) https://doi.org/10.1116/1.578495

Abstract

View articletitled, Plasma etching: An enabling technology for gigahertz silicon integrated circuits

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X‐ray photoelectron spectroscopy study of low energy CF⁺ ion interactions with silicon

W. H. Chang; I. Bello; W. M. Lau

J. Vac. Sci. Technol. A 11, 1221–1225 (1993) https://doi.org/10.1116/1.578496

Abstract

View articletitled, X‐ray photoelectron spectroscopy study of low energy CF+ ion interactions with silicon

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Influence of different etching mechanisms on the angular dependence of silicon nitride etching

A. M. Barklund; H.‐O. Blom

J. Vac. Sci. Technol. A 11, 1226–1229 (1993) https://doi.org/10.1116/1.578497

Abstract

View articletitled, Influence of different etching mechanisms on the angular dependence of silicon nitride etching

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Electrostatic ion deflection in patterned substrates

C. M. Horwitz; T. Puzzer

J. Vac. Sci. Technol. A 11, 1230–1241 (1993) https://doi.org/10.1116/1.578498

Abstract

View articletitled, Electrostatic ion deflection in patterned substrates

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X‐ray photoelectron spectroscopic study of the interactions of CF⁺ ions with gallium arsenide

L. R. Williston; I. Bello; W. M. Lau

J. Vac. Sci. Technol. A 11, 1242–1247 (1993) https://doi.org/10.1116/1.578499

Abstract

View articletitled, X‐ray photoelectron spectroscopic study of the interactions of CF+ ions with gallium arsenide

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Preparation of microcellular foam in cylindrical gold targets

Paul G. Apen; Sherman V. Armstrong; Joyce E. Moore; Brent F. Espinoza; Vivian Gurule; Peter L. Gobby; Joel M. Williams

J. Vac. Sci. Technol. A 11, 1248–1251 (1993) https://doi.org/10.1116/1.578500

Abstract

View articletitled, Preparation of microcellular foam in cylindrical gold targets

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Electron‐beam rocket acceleration of hydrogen pellets

C. C. Tsai; C. A. Foster; S. L. Milora; D. E. Schechter; J. H. Whealton

J. Vac. Sci. Technol. A 11, 1252–1257 (1993) https://doi.org/10.1116/1.578535

Abstract

View articletitled, Electron‐beam rocket acceleration of hydrogen pellets

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Growth of plasma‐generated particles and behavior of particle clouds during sputtering of silicon and silicon dioxide

W. J. Yoo; Ch. Steinbrüchel

J. Vac. Sci. Technol. A 11, 1258–1263 (1993) https://doi.org/10.1116/1.578536

Abstract

View articletitled, Growth of plasma‐generated particles and behavior of particle clouds during sputtering of silicon and silicon dioxide

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Electrode material and geometry effects on the formation and electrical properties of particle traps in a plasma etch system

S. M. Collins; J. F. O’Hanlon; S. E. Beck; L. Hong

J. Vac. Sci. Technol. A 11, 1264–1267 (1993) https://doi.org/10.1116/1.578537

Abstract

View articletitled, Electrode material and geometry effects on the formation and electrical properties of particle traps in a plasma etch system

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Fabrication of waveguides using low‐temperature plasma processing techniques

E. S. Bulat; M. Tabasky; B. Tweed; C. Herrick; S. Hankin; N. J. Lewis; D. Oblas; T. Fitzgerald

J. Vac. Sci. Technol. A 11, 1268–1274 (1993) https://doi.org/10.1116/1.578538

Abstract

View articletitled, Fabrication of waveguides using low‐temperature plasma processing techniques

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Analytic model of the ion angular distribution in a collisional sheath

V. Vahedi; R. A. Stewart; M. A. Lieberman

J. Vac. Sci. Technol. A 11, 1275–1282 (1993) https://doi.org/10.1116/1.578539

Abstract

View articletitled, Analytic model of the ion angular distribution in a collisional sheath

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Etching rate characterization of SiO₂ and Si using ion energy flux and atomic fluorine density in a CF₄/O₂/Ar electron cyclotron resonance plasma

J. Ding; J.‐S. Jenq; G.‐H. Kim; H. L. Maynard; J. S. Hamers; N. Hershkowitz; J. W. Taylor

J. Vac. Sci. Technol. A 11, 1283–1288 (1993) https://doi.org/10.1116/1.578540

Abstract

View articletitled, Etching rate characterization of SiO2 and Si using ion energy flux and atomic fluorine density in a CF4/O2/Ar electron cyclotron resonance plasma

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Experimental scaling laws for multipolar electron cyclotron resonance plasma sources

F. C. Sze; J. Asmussen

J. Vac. Sci. Technol. A 11, 1289–1295 (1993) https://doi.org/10.1116/1.578541

Abstract

View articletitled, Experimental scaling laws for multipolar electron cyclotron resonance plasma sources

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Application of a high density inductively coupled plasma reactor to polysilicon etching

Roger Patrick; Philippe Schoenborn; Harry Toda; Frank Bose

J. Vac. Sci. Technol. A 11, 1296–1300 (1993) https://doi.org/10.1116/1.578542

Abstract

View articletitled, Application of a high density inductively coupled plasma reactor to polysilicon etching

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Transformer coupled plasma etch technology for the fabrication of subhalf micron structures

J. B. Carter; J. P. Holland; E. Peltzer; B. Richardson; E. Bogle; H. T. Nguyen; Y. Melaku; D. Gates; M. Ben‐Dor

J. Vac. Sci. Technol. A 11, 1301–1306 (1993) https://doi.org/10.1116/1.578543

Abstract

View articletitled, Transformer coupled plasma etch technology for the fabrication of subhalf micron structures

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Comparison of the operational performance of a compact electron cyclotron resonance plasma source at excitation frequencies of 2.45 GHz or 915 MHz

A. K. Srivastava; J. Asmussen, Jr.

J. Vac. Sci. Technol. A 11, 1307–1312 (1993) https://doi.org/10.1116/1.578544

Abstract

View articletitled, Comparison of the operational performance of a compact electron cyclotron resonance plasma source at excitation frequencies of 2.45 GHz or 915 MHz

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Compact electron cyclotron resonance ion source with a permanent magnet

M. Shimada; Y. Torii

J. Vac. Sci. Technol. A 11, 1313–1316 (1993) https://doi.org/10.1116/1.578545

Abstract

View articletitled, Compact electron cyclotron resonance ion source with a permanent magnet

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Two‐dimensional mapping of plasma parameters using probes in an electron cyclotron resonance etching device

J. A. Meyer; J. S. Hamers; G.‐H. Kim; N. Hershkowitz

J. Vac. Sci. Technol. A 11, 1317–1322 (1993) https://doi.org/10.1116/1.578546

Abstract

View articletitled, Two‐dimensional mapping of plasma parameters using probes in an electron cyclotron resonance etching device

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Reactive ion etching induced damage to SiO₂ and SiO₂–Si interfaces in polycrystalline Si overetch

Tieer Gu; R. A. Ditizio; O. O. Awadelkarim; S. J. Fonash; J. F. Rembetski; P. Aum; K. A. Reinhardt; Y. D. Chan

J. Vac. Sci. Technol. A 11, 1323–1326 (1993) https://doi.org/10.1116/1.578547

Abstract

View articletitled, Reactive ion etching induced damage to SiO2 and SiO2–Si interfaces in polycrystalline Si overetch

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Amorphous silicon alloys on c‐Si: Influence of substrate cleaning and ion bombardment on film adhesion and microstructure

S.‐Y. Yang; J. R. Abelson

J. Vac. Sci. Technol. A 11, 1327–1331 (1993) https://doi.org/10.1116/1.578548

Abstract

View articletitled, Amorphous silicon alloys on c‐Si: Influence of substrate cleaning and ion bombardment on film adhesion and microstructure

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Creation of deep gap states in Si during Cl₂ or HBr plasma etch exposures

O. O. Awadelkarim; T. Gu; R. A. Ditizio; P. I. Mikulan; S. J. Fonash; J. F. Rembetski; Y. D. Chan

J. Vac. Sci. Technol. A 11, 1332–1336 (1993) https://doi.org/10.1116/1.578549

Abstract

View articletitled, Creation of deep gap states in Si during Cl2 or HBr plasma etch exposures

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Dielectric and chemical modifications in polyimide films etched in O₂/CF₄ plasmas

Shien‐Yang Wu; Ressano De Souza‐Machado; Denice D. Denton

J. Vac. Sci. Technol. A 11, 1337–1345 (1993) https://doi.org/10.1116/1.578550

Abstract

View articletitled, Dielectric and chemical modifications in polyimide films etched in O2/CF4 plasmas

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Superlattices of YBa₂Cu₃O_7−δ/PrBa₂Cu₃O_7−δ grown by the pulsed organometallic beam epitaxy method

S. J. Duray; D. B. Buchholz; H. Zhang; S. N. Song; D. L. Schulz; V. P. Dravid; T. J. Marks; J. B. Ketterson; R. P. H. Chang

J. Vac. Sci. Technol. A 11, 1346–1348 (1993) https://doi.org/10.1116/1.578551

Abstract

View articletitled, Superlattices of YBa2Cu3O7−δ/PrBa2Cu3O7−δ grown by the pulsed organometallic beam epitaxy method

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Surface step density oscillation during the growth of YBa₂Cu₃O_7−x and DyBa₂Cu₃O_7−x superconducting thin films

N. Chandrasekhar; V. S. Achutharaman; A. M. Goldman

J. Vac. Sci. Technol. A 11, 1349–1353 (1993) https://doi.org/10.1116/1.578552

Abstract

View articletitled, Surface step density oscillation during the growth of YBa2Cu3O7−x and DyBa2Cu3O7−x superconducting thin films

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Growth and characterization of laser‐deposited superconducting Bi–Sr–Ca–Cu–O thin films

P. J. Kung; R. E. Muenchausen

J. Vac. Sci. Technol. A 11, 1354–1360 (1993) https://doi.org/10.1116/1.578553

Abstract

View articletitled, Growth and characterization of laser‐deposited superconducting Bi–Sr–Ca–Cu–O thin films

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Reactive coevaporation of DyBaCuO superconducting films: The segregation of bulk impurities on annealed MgO(100) substrates

Russell V. Smilgys; Steven W. Robey; C. K. Chiang; T. J. Hsieh

J. Vac. Sci. Technol. A 11, 1361–1366 (1993) https://doi.org/10.1116/1.578554

Abstract

View articletitled, Reactive coevaporation of DyBaCuO superconducting films: The segregation of bulk impurities on annealed MgO(100) substrates

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Cracking and debonding of microlaminates

Z. Suo

J. Vac. Sci. Technol. A 11, 1367–1372 (1993) https://doi.org/10.1116/1.578555

Abstract

View articletitled, Cracking and debonding of microlaminates

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Variational principle of thin film adhesion

Hyo‐Soo Jeong; Robert C. White

J. Vac. Sci. Technol. A 11, 1373–1376 (1993) https://doi.org/10.1116/1.578556

Abstract

View articletitled, Variational principle of thin film adhesion

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Real time stress measurements and elastic constant of aluminum nitride thin films on Si(111)

W. J. Meng; J. A. Sell; T. A. Perry; G. L. Eesley

J. Vac. Sci. Technol. A 11, 1377–1382 (1993) https://doi.org/10.1116/1.578557

Abstract

View articletitled, Real time stress measurements and elastic constant of aluminum nitride thin films on Si(111)

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Thin film sensors: The role of defects and impurity sites in controlling sensor response and selectivity

G. E. Collins; N. R. Armstrong; J. W. Pankow; C. Oden; R. Brina; C. Arbour; J.‐P. Dodelet

J. Vac. Sci. Technol. A 11, 1383–1391 (1993) https://doi.org/10.1116/1.578558

Abstract

View articletitled, Thin film sensors: The role of defects and impurity sites in controlling sensor response and selectivity

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Ultrathin heteroepitaxial SnO₂ films for use in gas sensors

G. E. Poirier; R. E. Cavicchi; S. Semancik

J. Vac. Sci. Technol. A 11, 1392–1395 (1993) https://doi.org/10.1116/1.578559

Abstract

View articletitled, Ultrathin heteroepitaxial SnO2 films for use in gas sensors

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Novel embedded capacitive sensors for monitoring the cure of polyimide in multichip modules

Zikang Pan; P. J. Hesketh; G. J. Maclay

J. Vac. Sci. Technol. A 11, 1396–1400 (1993) https://doi.org/10.1116/1.578560

Abstract

View articletitled, Novel embedded capacitive sensors for monitoring the cure of polyimide in multichip modules

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Sputtered high temperature thin film thermocouples

Kenneth G. Kreider

J. Vac. Sci. Technol. A 11, 1401–1405 (1993) https://doi.org/10.1116/1.578561

Abstract

View articletitled, Sputtered high temperature thin film thermocouples

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Properties of ferroelectric PbTiO₃ films grown in an ionized cluster beam system

Maria Huffman; T. S. Kalkur; L. Kammerdiner; R. Kwor; L. L. Levenson; M. Reeder

J. Vac. Sci. Technol. A 11, 1406–1410 (1993) https://doi.org/10.1116/1.578562

Abstract

View articletitled, Properties of ferroelectric PbTiO3 films grown in an ionized cluster beam system

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Development and fabrication of thin‐film BaTiO₃ capacitors using radio‐frequency magnetron sputtering

Z. Q. Shi; Q. X. Jia; W. A. Anderson

J. Vac. Sci. Technol. A 11, 1411–1413 (1993) https://doi.org/10.1116/1.578563

Abstract

View articletitled, Development and fabrication of thin‐film BaTiO3 capacitors using radio‐frequency magnetron sputtering

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Ellipsometry and x‐ray photoelectron spectroscopy study of SnO₂ reduction at the interface with sputtered a‐Si:H

Y. H. Yang; G. F. Feng; M. Katiyar; N. Maley; J. R. Abelson

J. Vac. Sci. Technol. A 11, 1414–1417 (1993) https://doi.org/10.1116/1.578564

Abstract

View articletitled, Ellipsometry and x‐ray photoelectron spectroscopy study of SnO2 reduction at the interface with sputtered a‐Si:H

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Saddle‐field ion source deposition of conductive thin films

G. F. Cardinale; D. G. Howitt

J. Vac. Sci. Technol. A 11, 1418–1421 (1993) https://doi.org/10.1116/1.578565

Abstract

View articletitled, Saddle‐field ion source deposition of conductive thin films

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Transparent and conductive GaN thin films prepared by an electron cyclotron resonance plasma metalorganic chemical vapor deposition method

H. Sato; T. Minami; E. Yamada; S. Takata; M. Ishii

J. Vac. Sci. Technol. A 11, 1422–1425 (1993) https://doi.org/10.1116/1.578566

Abstract

View articletitled, Transparent and conductive GaN thin films prepared by an electron cyclotron resonance plasma metalorganic chemical vapor deposition method

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Gas porosity formation in epitaxial TiN films deposited by reactive magnetron sputtering in mixed Ar/N₂ discharges

P. R. Kazansky; L. Hultman; I. Ivanov; J.‐E. Sundgren

J. Vac. Sci. Technol. A 11, 1426–1430 (1993) https://doi.org/10.1116/1.578567

Abstract

View articletitled, Gas porosity formation in epitaxial TiN films deposited by reactive magnetron sputtering in mixed Ar/N2 discharges

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Materials for superconducting electronics: In situ growth of PrGaO₃ thin films by metalorganic chemical vapor deposition

Bin Han; Deborah A. Neumayer; Douglas L. Schulz; Bruce J. Hinds; Tobin J. Marks

J. Vac. Sci. Technol. A 11, 1431–1434 (1993) https://doi.org/10.1116/1.578568

Abstract

View articletitled, Materials for superconducting electronics: In situ growth of PrGaO3 thin films by metalorganic chemical vapor deposition

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Role of stress relief in the hexagonal‐close‐packed to face‐centered‐cubic phase transformation in cobalt thin films

C. Cabral, Jr.; K. Barmak; J. Gupta; L. A. Clevenger; B. Arcot; D. A. Smith; J. M. E. Harper

J. Vac. Sci. Technol. A 11, 1435–1440 (1993) https://doi.org/10.1116/1.578569

Abstract

View articletitled, Role of stress relief in the hexagonal‐close‐packed to face‐centered‐cubic phase transformation in cobalt thin films

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Electrophoretic deposition of pure MoS₂ dry film lubricant coatings

Janda K. G. Panitz; M. T. Dugger; D. E. Peebles; D. R. Tallant; C. R. Hills

J. Vac. Sci. Technol. A 11, 1441–1446 (1993) https://doi.org/10.1116/1.578570

Abstract

View articletitled, Electrophoretic deposition of pure MoS2 dry film lubricant coatings

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Gas incorporation during ion‐assisted deposition in bias sputtering

B. Window; G. L. Harding

J. Vac. Sci. Technol. A 11, 1447–1450 (1993) https://doi.org/10.1116/1.578681

Abstract

View articletitled, Gas incorporation during ion‐assisted deposition in bias sputtering

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Design and performance of a novel powder flash evaporator

J. A. Shepherd; S. E. Sobottka; M. B. Williams

J. Vac. Sci. Technol. A 11, 1451–1453 (1993) https://doi.org/10.1116/1.578682

Abstract

View articletitled, Design and performance of a novel powder flash evaporator

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Ir–Zr alloys as diffusion barriers between Cu and Si(100)

H. Yang; C. M. Gilmore; D. E. Ramaker

J. Vac. Sci. Technol. A 11, 1454–1457 (1993) https://doi.org/10.1116/1.578683

Abstract

View articletitled, Ir–Zr alloys as diffusion barriers between Cu and Si(100)

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Oxidation behavior of annealed CoCr thin films

B. G. Demczyk

J. Vac. Sci. Technol. A 11, 1458–1463 (1993) https://doi.org/10.1116/1.578684

Abstract

View articletitled, Oxidation behavior of annealed CoCr thin films

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Investigation of a laser soldering process for the interconnection of thin film sensors with sputtered multilayer metallizations

R. Chabicovsky; J. Nicolics; L. Musiejovsky

J. Vac. Sci. Technol. A 11, 1464–1469 (1993) https://doi.org/10.1116/1.578685

Abstract

View articletitled, Investigation of a laser soldering process for the interconnection of thin film sensors with sputtered multilayer metallizations

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X‐ray diffraction analysis and x‐ray photoelectron spectroscopy of α‐ and β‐W thin films grown by ion beam assisted deposition

S. I. Shah; B. A. Doele; C. R. Fincher; K. M. Unruh; I. Weerasekera

J. Vac. Sci. Technol. A 11, 1470–1473 (1993) https://doi.org/10.1116/1.578686

Abstract

View articletitled, X‐ray diffraction analysis and x‐ray photoelectron spectroscopy of α‐ and β‐W thin films grown by ion beam assisted deposition

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Characteristics of oxygen implanted indium phosphide

L. He; W. A. Anderson

J. Vac. Sci. Technol. A 11, 1474–1479 (1993) https://doi.org/10.1116/1.578687

Abstract

View articletitled, Characteristics of oxygen implanted indium phosphide

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Metal ion implantation for large scale surface modification

Ian G. Brown

J. Vac. Sci. Technol. A 11, 1480–1485 (1993) https://doi.org/10.1116/1.578688

Abstract

View articletitled, Metal ion implantation for large scale surface modification

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Radio frequency plasma jet applied to coating of internal walls of narrow tubes

L. Bárdoš; S. Berg; H. Baránková

J. Vac. Sci. Technol. A 11, 1486–1490 (1993) https://doi.org/10.1116/1.578689

Abstract

View articletitled, Radio frequency plasma jet applied to coating of internal walls of narrow tubes

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Aluminum oxide thin film deposition by reactive ion plating using the cathode system composed of LaB₆ disc and Ta pipe

Y. Takahashi; K. Nitobe; J. Uramoto; T. Momose; H. Ishimaru

J. Vac. Sci. Technol. A 11, 1491–1495 (1993) https://doi.org/10.1116/1.578690

Abstract

View articletitled, Aluminum oxide thin film deposition by reactive ion plating using the cathode system composed of LaB6 disc and Ta pipe

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Characteristics of hollow cathode discharge plasma and its application for the reactive ion plating of TiN and TiC

K. W. Whang; Y. W. Seo

J. Vac. Sci. Technol. A 11, 1496–1500 (1993) https://doi.org/10.1116/1.578691

Abstract

View articletitled, Characteristics of hollow cathode discharge plasma and its application for the reactive ion plating of TiN and TiC

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Cosputtering and serial cosputtering using cylindrical rotatable magnetrons

A. Belkind

J. Vac. Sci. Technol. A 11, 1501–1509 (1993) https://doi.org/10.1116/1.578692

Abstract

View articletitled, Cosputtering and serial cosputtering using cylindrical rotatable magnetrons

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Deposition by glow discharge sputtering of thin epitaxial films of Ib–VIII alloys (AgPd, CuPd, CuRh)

M. P. Delplancke; F. Reniers; A. Asskali; M. Jardinier‐Offergeld; F. Bouillon

J. Vac. Sci. Technol. A 11, 1510–1515 (1993) https://doi.org/10.1116/1.578693

Abstract

View articletitled, Deposition by glow discharge sputtering of thin epitaxial films of Ib–VIII alloys (AgPd, CuPd, CuRh)

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Metastable states’ population densities in Gd atomic beam at high‐rate evaporation by electron beam heating

Akihiko Nishimura; Takashi Arisawa; Hironori Ohba; Takemasa Shibata

J. Vac. Sci. Technol. A 11, 1516–1521 (1993) https://doi.org/10.1116/1.578694

Abstract

View articletitled, Metastable states’ population densities in Gd atomic beam at high‐rate evaporation by electron beam heating

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Removing the energetic neutral problem in sputtering

B. Window

J. Vac. Sci. Technol. A 11, 1522–1527 (1993) https://doi.org/10.1116/1.578695

Abstract

View articletitled, Removing the energetic neutral problem in sputtering

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Reactive magnetron sputter deposition of niobium nitride films

M. S. Wong; W. D. Sproul; X. Chu; S. A. Barnett

J. Vac. Sci. Technol. A 11, 1528–1533 (1993) https://doi.org/10.1116/1.578696

Abstract

View articletitled, Reactive magnetron sputter deposition of niobium nitride films

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Reactive sputtering using two reactive gases, experiments and computer modeling

P. Carlsson; C. Nender; H. Barankova; S. Berg

J. Vac. Sci. Technol. A 11, 1534–1539 (1993) https://doi.org/10.1116/1.578501

Abstract

View articletitled, Reactive sputtering using two reactive gases, experiments and computer modeling

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Phase formation in sputter deposited metal (V, Nb, Zr, Y) oxides: Relationship to metal, metal–oxygen, and oxygen flux

Carolyn Rubin Aita

J. Vac. Sci. Technol. A 11, 1540–1547 (1993) https://doi.org/10.1116/1.578502

Abstract

View articletitled, Phase formation in sputter deposited metal (V, Nb, Zr, Y) oxides: Relationship to metal, metal–oxygen, and oxygen flux

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Sputter deposition of yttrium–oxides

A. F. Jankowski; L. R. Schrawyer; J. P. Hayes

J. Vac. Sci. Technol. A 11, 1548–1552 (1993) https://doi.org/10.1116/1.578503

Abstract

View articletitled, Sputter deposition of yttrium–oxides

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Effects of aluminum sputtering target surface grain relief and crystallographic orientation on sputtering I–V characteristics

A. Leybovich; T. Kuniya

J. Vac. Sci. Technol. A 11, 1553–1557 (1993) https://doi.org/10.1116/1.578504

Abstract

View articletitled, Effects of aluminum sputtering target surface grain relief and crystallographic orientation on sputtering I–V characteristics

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Effects of aluminum silicon copper sputtering target processing methods on thin film uniformity and process control during very large scale integrated device fabrication

J. A. Dunlop; B. Y. Pouliquen; T. J. Drinnon; D. T. Wilcoxen; J. C. Huneke; I. C. Ivanov; D. B. Knorr; D. P. Tracy

J. Vac. Sci. Technol. A 11, 1558–1565 (1993) https://doi.org/10.1116/1.578505

Abstract

View articletitled, Effects of aluminum silicon copper sputtering target processing methods on thin film uniformity and process control during very large scale integrated device fabrication

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Time‐dependent helium and hydrogen pressure profiles in a long, cryogenically cooled tube, pumped at periodic intervals

J. P. Hobson; K. M. Welch

J. Vac. Sci. Technol. A 11, 1566–1574 (1993) https://doi.org/10.1116/1.578506

Abstract

View articletitled, Time‐dependent helium and hydrogen pressure profiles in a long, cryogenically cooled tube, pumped at periodic intervals

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Radio‐frequency superconductivity technology: Its sensitivity to surface conditions

P. Kneisel

J. Vac. Sci. Technol. A 11, 1575–1583 (1993) https://doi.org/10.1116/1.578507

Abstract

View articletitled, Radio‐frequency superconductivity technology: Its sensitivity to surface conditions

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Gas permeation through a high density polyethylene microwave window

Viet Nguyen‐Tuong

J. Vac. Sci. Technol. A 11, 1584–1586 (1993) https://doi.org/10.1116/1.578508

Abstract

View articletitled, Gas permeation through a high density polyethylene microwave window

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Design of large aperture, low mass vacuum windows

M. Mapes; W. J. Leonhardt

J. Vac. Sci. Technol. A 11, 1587–1592 (1993) https://doi.org/10.1116/1.578509

Abstract

View articletitled, Design of large aperture, low mass vacuum windows

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Quantitative analysis of contaminants in ultrapure gases at the parts‐per‐trillion level using atmospheric pressure ionization mass spectroscopy

Kevin Siefering; Henry Berger; Walter Whitlock

J. Vac. Sci. Technol. A 11, 1593–1597 (1993) https://doi.org/10.1116/1.578510

Abstract

View articletitled, Quantitative analysis of contaminants in ultrapure gases at the parts‐per‐trillion level using atmospheric pressure ionization mass spectroscopy

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High sensitivity He desorption leak detection method

M. G. Rao

J. Vac. Sci. Technol. A 11, 1598–1601 (1993) https://doi.org/10.1116/1.578511

Abstract

View articletitled, High sensitivity He desorption leak detection method

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Low temperature organometallic gas introduction system for chemical beam epitaxy under micro gravity conditions

M. Zaltsberg; A. Bensaoula; C. Horton; R. Haacke; A. Freundlich; P. Mahavadi; V. Rossignol

J. Vac. Sci. Technol. A 11, 1602–1606 (1993) https://doi.org/10.1116/1.578512

Abstract

View articletitled, Low temperature organometallic gas introduction system for chemical beam epitaxy under micro gravity conditions

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Pumping of helium and hydrogen by sputter‐ion pumps. I. Helium pumping

K. M. Welch; D. J. Pate; R. J. Todd

J. Vac. Sci. Technol. A 11, 1607–1613 (1993) https://doi.org/10.1116/1.578466

Abstract

View articletitled, Pumping of helium and hydrogen by sputter‐ion pumps. I. Helium pumping

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New concepts in turbomolecular pump design

M. H. Hablanian

J. Vac. Sci. Technol. A 11, 1614–1619 (1993) https://doi.org/10.1116/1.578467

Abstract

View articletitled, New concepts in turbomolecular pump design

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Total pressure measurement down to 10⁻¹² Pa without electron stimulated desorption ion errors

Fumio Watanabe

J. Vac. Sci. Technol. A 11, 1620–1626 (1993) https://doi.org/10.1116/1.578468

Abstract

View articletitled, Total pressure measurement down to 10−12 Pa without electron stimulated desorption ion errors

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Safety and health considerations related to vacuum gauging

R. N. Peacock

J. Vac. Sci. Technol. A 11, 1627–1630 (1993) https://doi.org/10.1116/1.578469

Abstract

View articletitled, Safety and health considerations related to vacuum gauging

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Dynamics of adsorbate‐induced restructuring and reaction between adsorbates on Cu and Ni surfaces studied by scanning tunneling microscopy

F. Besenbacher; C. Klink; E. Lægsgaard; L. P. Nielsen; L. Ruan; I. Stensgaard

J. Vac. Sci. Technol. A 11, 1637–1639 (1993) https://doi.org/10.1116/1.578470

Abstract

View articletitled, Dynamics of adsorbate‐induced restructuring and reaction between adsorbates on Cu and Ni surfaces studied by scanning tunneling microscopy

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Real‐time scanning tunneling microscopy of phase transition and faceting on a vicinal Si(111) surface

M. Suzuki; Y. Homma; H. Hibino; T. Fukuda; T. Sato; M. Iwatsuki; K. Miki; H. Tokumoto

J. Vac. Sci. Technol. A 11, 1640–1643 (1993) https://doi.org/10.1116/1.578471

Abstract

View articletitled, Real‐time scanning tunneling microscopy of phase transition and faceting on a vicinal Si(111) surface

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Vacancy migration, adatom motion, and atomic bistability on the GaAs(110) surface studied by scanning tunneling microscopy

S. Gwo; A. R. Smith; C. K. Shih

J. Vac. Sci. Technol. A 11, 1644–1648 (1993) https://doi.org/10.1116/1.578472

Abstract

View articletitled, Vacancy migration, adatom motion, and atomic bistability on the GaAs(110) surface studied by scanning tunneling microscopy

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Elevated temperature oxidation and etching of the Si(111) 7×7 surface observed with scanning tunneling microscopy

J. Seiple; J. Pecquet; Z. Meng; J. P. Pelz

J. Vac. Sci. Technol. A 11, 1649–1653 (1993) https://doi.org/10.1116/1.578473

Abstract

View articletitled, Elevated temperature oxidation and etching of the Si(111) 7×7 surface observed with scanning tunneling microscopy

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Growth and morphology of partial and multilayer Fe thin films on Cu(100) and the effect of adsorbed gases studied by scanning tunneling microscopy

K. E. Johnson; D. D. Chambliss; R. J. Wilson; S. Chiang

J. Vac. Sci. Technol. A 11, 1654–1660 (1993) https://doi.org/10.1116/1.578474

Abstract

View articletitled, Growth and morphology of partial and multilayer Fe thin films on Cu(100) and the effect of adsorbed gases studied by scanning tunneling microscopy

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Face‐centered‐cubic (111) to body‐centered‐cubic (110) transition in epitaxial Fe on Cu(111)

M. T. Kief; W. F. Egelhoff, Jr.

J. Vac. Sci. Technol. A 11, 1661–1666 (1993) https://doi.org/10.1116/1.578475

Abstract

View articletitled, Face‐centered‐cubic (111) to body‐centered‐cubic (110) transition in epitaxial Fe on Cu(111)

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Ultrathin Fe films on TiO₂(110): Growth and reactivity

Jian‐Mei Pan; Theodore E. Madey

J. Vac. Sci. Technol. A 11, 1667–1674 (1993) https://doi.org/10.1116/1.578476

Abstract

View articletitled, Ultrathin Fe films on TiO2(110): Growth and reactivity

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Electronic and geometric structure of C₆₀ molecules on Au(001)

D. K. Kim; Y. D. Suh; K. H. Park; H. P. Noh; S. K. Kim; S. J. Oh; Young Kuk

J. Vac. Sci. Technol. A 11, 1675–1679 (1993) https://doi.org/10.1116/1.578477

Abstract

View articletitled, Electronic and geometric structure of C60 molecules on Au(001)

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Scanning tunneling microscopy studies of nucleation and growth in a reactive, epitaxial system: Co/Si(111)

P. A. Bennett; S. A. Parikh; D. G. Cahill

J. Vac. Sci. Technol. A 11, 1680–1685 (1993) https://doi.org/10.1116/1.578478

Abstract

View articletitled, Scanning tunneling microscopy studies of nucleation and growth in a reactive, epitaxial system: Co/Si(111)

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Ellipsometry investigation of nucleation and growth of electron cyclotron resonance plasma deposited silicon films

M. Li; Y. Z. Hu; J. Wall; K. Conrad; E. A. Irene

J. Vac. Sci. Technol. A 11, 1686–1691 (1993) https://doi.org/10.1116/1.578479

Abstract

View articletitled, Ellipsometry investigation of nucleation and growth of electron cyclotron resonance plasma deposited silicon films

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Nucleation and growth of chemical vapor deposition TiN films on Si (100) as studied by total reflection x‐ray fluorescence, atomic force microscopy, and Auger electron spectroscopy

Rama I. Hegde; Philip J. Tobin; Robert W. Fiordalice; Edward O. Travis

J. Vac. Sci. Technol. A 11, 1692–1695 (1993) https://doi.org/10.1116/1.578480

Abstract

View articletitled, Nucleation and growth of chemical vapor deposition TiN films on Si (100) as studied by total reflection x‐ray fluorescence, atomic force microscopy, and Auger electron spectroscopy

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Precision parts cleaning using supercritical fluids

Robert Purtell; Laura Rothman; Benjamin Eldridge; Catherine Chess

J. Vac. Sci. Technol. A 11, 1696–1701 (1993) https://doi.org/10.1116/1.578481

Abstract

View articletitled, Precision parts cleaning using supercritical fluids

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Model for the outgassing of water from metal surfaces

Minxu Li; H. F. Dylla

J. Vac. Sci. Technol. A 11, 1702–1707 (1993) https://doi.org/10.1116/1.578482

Abstract

View articletitled, Model for the outgassing of water from metal surfaces

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Cl₂ gas corrosion and outgassing of various surface‐treated aluminum alloys

H. Iguchi; T. Momose; H. Ishimaru

J. Vac. Sci. Technol. A 11, 1708–1713 (1993) https://doi.org/10.1116/1.578483

Abstract

View articletitled, Cl2 gas corrosion and outgassing of various surface‐treated aluminum alloys

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Evaluation of aluminum foils, Loctite, ferrites, and ‘‘mirror‐finished’’ stainless steel for use in ultrahigh vacuum applications

Vijendran Rao

J. Vac. Sci. Technol. A 11, 1714–1718 (1993) https://doi.org/10.1116/1.578484

Abstract

View articletitled, Evaluation of aluminum foils, Loctite, ferrites, and ‘‘mirror‐finished’’ stainless steel for use in ultrahigh vacuum applications

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Quick acquisition of clean ultrahigh vacuum by chemical process technology

K. Tatenuma; T. Momose; H. Ishimaru

J. Vac. Sci. Technol. A 11, 1719–1724 (1993) https://doi.org/10.1116/1.578485

Abstract

View articletitled, Quick acquisition of clean ultrahigh vacuum by chemical process technology

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Scanning tunneling microscope tip–sample interactions: Atomic modification of Si and nanometer Si Schottky diodes

Ph. Avouris; I.‐W. Lyo; Y. Hasegawa

J. Vac. Sci. Technol. A 11, 1725–1732 (1993) https://doi.org/10.1116/1.578486

Abstract

View articletitled, Scanning tunneling microscope tip–sample interactions: Atomic modification of Si and nanometer Si Schottky diodes

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First‐principles electronic properties of model silicon‐based quantum wires

J. W. Mintmire

J. Vac. Sci. Technol. A 11, 1733–1735 (1993) https://doi.org/10.1116/1.578487

Abstract

View articletitled, First‐principles electronic properties of model silicon‐based quantum wires

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Electroluminescence and photoluminescence from microporous silicon p‐n junctions

V. P. Kesan; E. Bassous; P. Munguia; S. F. Pesarcik; M. Freeman; S. S. Iyer; J.‐M. Halbout

J. Vac. Sci. Technol. A 11, 1736–1738 (1993) https://doi.org/10.1116/1.578416

Abstract

View articletitled, Electroluminescence and photoluminescence from microporous silicon p‐n junctions

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Spatial density of lines exposed in poly(methylmethacrylate) by electron beam lithography

Xiaokang Huang;