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Ultrahigh vacuum microscopy of the Si(111) boron √3×√3R30° surface
J. Vac. Sci. Technol. A 11, 469–473 (1993)
https://doi.org/10.1116/1.578758
X‐ray photoelectron and Auger electron spectroscopy study of ultraviolet/ozone oxidized, P2S5/(NH4)2S treated GaAs(100) surfaces
J. Vac. Sci. Technol. A 11, 474–480 (1993)
https://doi.org/10.1116/1.578759
In situ infrared measurements of film and gas properties during the plasma deposition of amorphous hydrogenated silicon
J. Vac. Sci. Technol. A 11, 490–502 (1993)
https://doi.org/10.1116/1.578761
Characterization of Tb at the interface of SiN/TbFeCo film by Auger electron spectroscopy
J. Vac. Sci. Technol. A 11, 503–508 (1993)
https://doi.org/10.1116/1.578762
Redistribution of solid fuel in inertial confinement fusion target by plasma
J. Vac. Sci. Technol. A 11, 509–513 (1993)
https://doi.org/10.1116/1.578763
Measuring the depth of fluorine incorporation in high and low density polyethylene by Rutherford backscattering spectrometry
J. Vac. Sci. Technol. A 11, 514–520 (1993)
https://doi.org/10.1116/1.578764
Analytical electron microscopy and Raman spectroscopy studies of carbon nitride thin films
J. Vac. Sci. Technol. A 11, 521–524 (1993)
https://doi.org/10.1116/1.578765
Geometric and electronic structures of Na/GaAs
J. Vac. Sci. Technol. A 11, 525–528 (1993)
https://doi.org/10.1116/1.578766
Observation of umklapp and surface bands in photoemission experiment on II–VI materials: A study of Cd0.6Hg0.4Te
J. Vac. Sci. Technol. A 11, 529–534 (1993)
https://doi.org/10.1116/1.578767
Electronic properties of ionic insulators on metal and semiconductor surfaces: RbCl on Si(100) and W(110)
J. Vac. Sci. Technol. A 11, 535–538 (1993)
https://doi.org/10.1116/1.578768
Surface reactivity of Zr–V–Fe getter alloys exposed to H2O, CO, and O2 at 300 and 700 K
J. Vac. Sci. Technol. A 11, 539–542 (1993)
https://doi.org/10.1116/1.578769
Residual stresses and fracture properties of magnetron sputtered Ti films on Si microelements
H. Ljungcrantz; L. Hultman; J.‐E. Sundgren; S. Johansson; N. Kristensen; J.‐Å. Schweitz; C. J. Shute
J. Vac. Sci. Technol. A 11, 543–553 (1993)
https://doi.org/10.1116/1.578770
Effect of surface re‐emission on the surface roughness of film growth in low pressure chemical vapor deposition
J. Vac. Sci. Technol. A 11, 557–568 (1993)
https://doi.org/10.1116/1.578772
Effects of processing on electrical properties of YBa2Cu3O7 films. I. Postdeposition anneal process
J. Vac. Sci. Technol. A 11, 574–579 (1993)
https://doi.org/10.1116/1.578774
Observation of oxygen enrichment in zirconium oxide films*
J. Vac. Sci. Technol. A 11, 580–587 (1993)
https://doi.org/10.1116/1.578775
Growth of DyBa2Cu3O7−x thin films on vicinal (100) SrTiO3 substrates
J. Vac. Sci. Technol. A 11, 597–603 (1993)
https://doi.org/10.1116/1.578777
Deposition of crystalline binary nitride films of tin, copper, and nickel by reactive sputtering
J. Vac. Sci. Technol. A 11, 604–608 (1993)
https://doi.org/10.1116/1.578778
Fabrication of NbN thin films by reactive sputtering
J. Vac. Sci. Technol. A 11, 615–620 (1993)
https://doi.org/10.1116/1.578780
Etching of zinc selenide and zinc telluride epitaxial films in a secondary afterglow plasma: A statistical experimental design study
J. Vac. Sci. Technol. A 11, 621–625 (1993)
https://doi.org/10.1116/1.578781
Epitaxial growth of GaP by remote plasma‐enhanced chemical vapor deposition
J. Vac. Sci. Technol. A 11, 626–630 (1993)
https://doi.org/10.1116/1.578782
Pregrowth treatment dependence of surface morphology for GaAs grown on exactly oriented (111)A substrates by molecular‐beam epitaxy
J. Vac. Sci. Technol. A 11, 631–636 (1993)
https://doi.org/10.1116/1.578783
Reflection high‐energy electron diffraction intensity monitored homoepitaxial growth of SrTiO3 buffer layer by pulsed laser deposition
J. Vac. Sci. Technol. A 11, 637–641 (1993)
https://doi.org/10.1116/1.578784
Influence of energy reflected from the target on thin film characteristics
J. Vac. Sci. Technol. A 11, 657–663 (1993)
https://doi.org/10.1116/1.578787
Power dissipation mechanisms in radio‐frequency driven silane discharges: The influence of discharge geometry
J. Vac. Sci. Technol. A 11, 664–671 (1993)
https://doi.org/10.1116/1.578788
Influence of magnetic field on the self‐bias potential on a radio frequency‐powered electrode in radio frequency plasma
J. Vac. Sci. Technol. A 11, 672–675 (1993)
https://doi.org/10.1116/1.578789
Sputtered atom transport in high‐current gas discharges: A self‐consistent computer simulation study
J. Vac. Sci. Technol. A 11, 676–681 (1993)
https://doi.org/10.1116/1.578790
Electric current oscillations in a parallel‐plate plasma reactor
J. Vac. Sci. Technol. A 11, 682–688 (1993)
https://doi.org/10.1116/1.578791
Using Fourier transform infrared absorption spectrometry to probe the injected neutral gas in a plasma having a high ionization fraction
J. Vac. Sci. Technol. A 11, 689–693 (1993)
https://doi.org/10.1116/1.578792
Characterization of an ultrahigh vacuum sputtering system
J. Vac. Sci. Technol. A 11, 694–700 (1993)
https://doi.org/10.1116/1.578793
Influence of clearance on the pumping performance of a molecular drag pump*
J. Vac. Sci. Technol. A 11, 704–710 (1993)
https://doi.org/10.1116/1.578795
Enhanced tribological performance of rigid disk by using chemically bonded lubricant
J. Vac. Sci. Technol. A 11, 711–714 (1993)
https://doi.org/10.1116/1.578796
Transmission ion channeling facility for structural studies of monolayer films on clean semiconductor surfaces
J. Vac. Sci. Technol. A 11, 715–722 (1993)
https://doi.org/10.1116/1.578797
Cryogenic trick for enhanced cooling using liquid nitrogen
J. Vac. Sci. Technol. A 11, 726–727 (1993)
https://doi.org/10.1116/1.578799
Linear thermal expansion coefficient and biaxial elastic modulus of diamondlike carbon films
J. Vac. Sci. Technol. A 11, 728–729 (1993)
https://doi.org/10.1116/1.578800
Close‐spaced vapor transport combined with free evaporation for doping of semiconductor thin films
J. Vac. Sci. Technol. A 11, 730–731 (1993)
https://doi.org/10.1116/1.578801
Method to calculate substrate temperature during intermittent radiant heating in vacuum
J. Vac. Sci. Technol. A 11, 732–735 (1993)
https://doi.org/10.1116/1.578802
Recommended Practice for the Calibration of Mass Spectrometers
James A. Basford; Mark D. Boeckmann; Robert E. Ellefson; Albert R. Filippelli; David H. Holkeboer; Laslo Lieszkovsky; Catherine M. Stupak
J. Vac. Sci. Technol. A 11, A22–A40 (1993)
https://doi.org/10.1116/1.4755937
Perspective on improving the quality of surface and material data analysis in the scientific literature with a focus on x-ray photoelectron spectroscopy (XPS)
George H. Major, Joshua W. Pinder, et al.
Low-resistivity molybdenum obtained by atomic layer deposition
Kees van der Zouw, Bernhard Y. van der Wel, et al.
Machine-learning-enabled on-the-fly analysis of RHEED patterns during thin film deposition by molecular beam epitaxy
Tiffany C. Kaspar, Sarah Akers, et al.