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Interfacial forces

Jacob Israelachvili

J. Vac. Sci. Technol. A 10, 2961–2971 (1992) https://doi.org/10.1116/1.577894

Abstract

View articletitled, Interfacial forces

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Emergence of atomic‐level structural information for ordered metal–solution interfaces: Some recent contributions from in situ infrared spectroscopy and scanning tunneling microscopy

Xiaoping Gao; Si‐Chung Chang; Xudong Jiang; Antoinette Hamelin; Michael J. Weaver

J. Vac. Sci. Technol. A 10, 2972–2980 (1992) https://doi.org/10.1116/1.577895

Abstract

View articletitled, Emergence of atomic‐level structural information for ordered metal–solution interfaces: Some recent contributions from in situ infrared spectroscopy and scanning tunneling microscopy

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Photon emission at metal/solution interface induced by electron injection from solvated electrons

Kei Murakoshi; Kohei Uosaki

J. Vac. Sci. Technol. A 10, 2981–2984 (1992) https://doi.org/10.1116/1.577896

Abstract

View articletitled, Photon emission at metal/solution interface induced by electron injection from solvated electrons

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Comparison of Cu(111) in aqueous electrolytes and in ultrahigh vacuum: An optical second harmonic generation study

E. K. L. Wong; K. A. Friedrich; J. M. Robinson; R. A. Bradley; G. L. Richmond

J. Vac. Sci. Technol. A 10, 2985–2990 (1992) https://doi.org/10.1116/1.577897

Abstract

View articletitled, Comparison of Cu(111) in aqueous electrolytes and in ultrahigh vacuum: An optical second harmonic generation study

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X‐ray photoelectron spectroscopy study on the electrical double layer at an Al₂O₃–Al interface

Hideo Sambe; David E. Ramaker

J. Vac. Sci. Technol. A 10, 2991–2995 (1992) https://doi.org/10.1116/1.577898

Abstract

View articletitled, X‐ray photoelectron spectroscopy study on the electrical double layer at an Al2O3–Al interface

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Observation of electronic structure at the metal/electrolyte and metal/vacuum interface by second‐harmonic generation

R. A. Bradley; R. Georgiadis; S. D. Kevan; G. L. Richmond

J. Vac. Sci. Technol. A 10, 2996–3000 (1992) https://doi.org/10.1116/1.577899

Abstract

View articletitled, Observation of electronic structure at the metal/electrolyte and metal/vacuum interface by second‐harmonic generation

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Electrochemical and in situ atomic force microscopy and scanning tunneling microscopy investigations of titanium in oxalic acid solution

Gilbert M. Brown; T. Thundat; D. P. Allison; R. J. Warmack

J. Vac. Sci. Technol. A 10, 3001–3006 (1992) https://doi.org/10.1116/1.577856

Abstract

View articletitled, Electrochemical and in situ atomic force microscopy and scanning tunneling microscopy investigations of titanium in oxalic acid solution

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Influence of adsorbed and implanted sulfur on the corrosion of iron in calcium nitrate at 60 °C

D. R. Baer; C. F. Windisch, Jr.; T. F. Soran; R. H. Jones; M. H. Engelhard

J. Vac. Sci. Technol. A 10, 3007–3011 (1992) https://doi.org/10.1116/1.577857

Abstract

View articletitled, Influence of adsorbed and implanted sulfur on the corrosion of iron in calcium nitrate at 60 °C

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Copper adlayer formation on Au(111) from sulfuric acid electrolyte

Michael P. Green; Karrie J. Hanson

J. Vac. Sci. Technol. A 10, 3012–3018 (1992) https://doi.org/10.1116/1.577858

Abstract

View articletitled, Copper adlayer formation on Au(111) from sulfuric acid electrolyte

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Surface x‐ray diffraction study of the Au(111) electrode in 0.01 M NaCl: Electrochemically induced surface reconstruction

B. M. Ocko; Alan Gibaud; Jia Wang

J. Vac. Sci. Technol. A 10, 3019–3025 (1992) https://doi.org/10.1116/1.577859

Abstract

View articletitled, Surface x‐ray diffraction study of the Au(111) electrode in 0.01 M NaCl: Electrochemically induced surface reconstruction

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H₂O adsorption on Ni(s) (111) surfaces: Evidence for a step induced influence on the adsorption geometry

Carsten Benndorf; Carolin Mundt

J. Vac. Sci. Technol. A 10, 3026–3031 (1992) https://doi.org/10.1116/1.577860

Abstract

View articletitled, H2O adsorption on Ni(s) (111) surfaces: Evidence for a step induced influence on the adsorption geometry

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GaAs deposition on the (100) and (110) planes of gold by electrochemical atomic layer epitaxy: A low‐energy electron diffraction, Auger electron spectroscopy, and scanning tunneling microscopy study

Ignacio Villegas; John L. Stickney

J. Vac. Sci. Technol. A 10, 3032–3038 (1992) https://doi.org/10.1116/1.577861

Abstract

View articletitled, GaAs deposition on the (100) and (110) planes of gold by electrochemical atomic layer epitaxy: A low‐energy electron diffraction, Auger electron spectroscopy, and scanning tunneling microscopy study

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X‐ray photoemission study of SF₆/O₂ triode reactive ion etching of polycrystalline silicon, silicon dioxide, and their interface

J. H. Thomas, III; B. Singh

J. Vac. Sci. Technol. A 10, 3039–3047 (1992) https://doi.org/10.1116/1.577862

Abstract

View articletitled, X‐ray photoemission study of SF6/O2 triode reactive ion etching of polycrystalline silicon, silicon dioxide, and their interface

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Dual excitation reactive ion etcher for low energy plasma processing

Haruhiro H. Goto; Hans‐Dirk Löwe; Tadahiro Ohmi

J. Vac. Sci. Technol. A 10, 3048–3054 (1992) https://doi.org/10.1116/1.577863

Abstract

View articletitled, Dual excitation reactive ion etcher for low energy plasma processing

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Microwave plasma enhanced chemical vapor deposition in magnetic fields below electron cyclotron resonance

Oleg A. Popov; Sergej Y. Shapoval; Merle D. Yoder, Jr.

J. Vac. Sci. Technol. A 10, 3055–3059 (1992) https://doi.org/10.1116/1.577864

Abstract

View articletitled, Microwave plasma enhanced chemical vapor deposition in magnetic fields below electron cyclotron resonance

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Reactive ion etching of poly(tetrafluoroethylene) in O₂–CF₄ plasmas

F. D. Egitto; L. J. Matienzo; H. B. Schreyer

J. Vac. Sci. Technol. A 10, 3060–3064 (1992) https://doi.org/10.1116/1.577865

Abstract

View articletitled, Reactive ion etching of poly(tetrafluoroethylene) in O2–CF4 plasmas

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Optical emission spectroscopy of zinc sulfide etch

Glennis J. Orloff

J. Vac. Sci. Technol. A 10, 3065–3069 (1992) https://doi.org/10.1116/1.577866

Abstract

View articletitled, Optical emission spectroscopy of zinc sulfide etch

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Effect of the radio‐frequency voltage phase in a balanced triode plasma etching reactor

J. H. Thomas, III; B. Singh

J. Vac. Sci. Technol. A 10, 3070–3075 (1992) https://doi.org/10.1116/1.577867

Abstract

View articletitled, Effect of the radio‐frequency voltage phase in a balanced triode plasma etching reactor

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Study of W/Ti triode plasma etching

J. F. Coulon; G. Turban; P. Rabinzohn; L. Jeannerot

J. Vac. Sci. Technol. A 10, 3076–3085 (1992) https://doi.org/10.1116/1.577868

Abstract

View articletitled, Study of W/Ti triode plasma etching

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Energy‐resolved angular distributions of O⁺ ions at the radio‐frequency‐powered electrode in reactive ion etching

Joachim Janes; Christoph Huth

J. Vac. Sci. Technol. A 10, 3086–3091 (1992) https://doi.org/10.1116/1.577869

Abstract

View articletitled, Energy‐resolved angular distributions of O+ ions at the radio‐frequency‐powered electrode in reactive ion etching

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Etching of silicon in low‐pressure plasmas containing fluorine and oxygen: A comparison of real‐time and postplasma surface studies

Gottlieb S. Oehrlein; Gerrit M. W. Kroesen; J. Lennart Lindström

J. Vac. Sci. Technol. A 10, 3092–3099 (1992) https://doi.org/10.1116/1.577870

Abstract

View articletitled, Etching of silicon in low‐pressure plasmas containing fluorine and oxygen: A comparison of real‐time and postplasma surface studies

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Characterization of a radio frequency plasma source for molecular beam epitaxial growth of high‐T_c superconductor films

Jean‐Pierre Locquet; Erich Mächler

J. Vac. Sci. Technol. A 10, 3100–3103 (1992) https://doi.org/10.1116/1.577871

Abstract

View articletitled, Characterization of a radio frequency plasma source for molecular beam epitaxial growth of high‐Tc superconductor films

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Contamination by sputtering in mirror field electron cyclotron resonance microwave plasma sources

S. M. Gorbatkin; L. A. Berry

J. Vac. Sci. Technol. A 10, 3104–3113 (1992) https://doi.org/10.1116/1.577872

Abstract

View articletitled, Contamination by sputtering in mirror field electron cyclotron resonance microwave plasma sources

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Doppler shift measurements of ion energy distribution widths in an electron cyclotron resonance/multipole hybrid reactor

John Forster; C. Chris Klepper; Lee A. Berry; S. M. Gorbatkin

J. Vac. Sci. Technol. A 10, 3114–3118 (1992) https://doi.org/10.1116/1.577873

Abstract

View articletitled, Doppler shift measurements of ion energy distribution widths in an electron cyclotron resonance/multipole hybrid reactor

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Langmuir probe and optical emission studies of Ar, O₂, and N₂ plasmas produced by an electron cyclotron resonance microwave source

A. A. Shatas; Y. Z. Hu; E. A. Irene

J. Vac. Sci. Technol. A 10, 3119–3124 (1992) https://doi.org/10.1116/1.577874

Abstract

View articletitled, Langmuir probe and optical emission studies of Ar, O2, and N2 plasmas produced by an electron cyclotron resonance microwave source

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Electrical characteristics of plasma‐deposited diamondlike carbon/silicon metal–insulator–semiconductor structures

Jayshree Seth; M. I. Chaudhry; S. V. Babu

J. Vac. Sci. Technol. A 10, 3125–3130 (1992) https://doi.org/10.1116/1.577875

Abstract

View articletitled, Electrical characteristics of plasma‐deposited diamondlike carbon/silicon metal–insulator–semiconductor structures

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Growth characteristics of photolytic laser‐induced chemical vapor deposition of tungsten from WF₆

Péter Mogyorósi; Jan‐Otto Carlsson

J. Vac. Sci. Technol. A 10, 3131–3135 (1992) https://doi.org/10.1116/1.577876

Abstract

View articletitled, Growth characteristics of photolytic laser‐induced chemical vapor deposition of tungsten from WF6

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Temperature distribution in an ideal azimuthally symmetric chemical‐vapor‐deposition reactor

David E. Kotecki; Richard A. Conti

J. Vac. Sci. Technol. A 10, 3136–3142 (1992) https://doi.org/10.1116/1.577877

Abstract

View articletitled, Temperature distribution in an ideal azimuthally symmetric chemical‐vapor‐deposition reactor

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Quantitative correlation of infrared absorption with nuclear magnetic resonance measurements of hydrogen content in diamond films

K. M. McNamara; K. K. Gleason; C. J. Robinson

J. Vac. Sci. Technol. A 10, 3143–3148 (1992) https://doi.org/10.1116/1.577834

Abstract

View articletitled, Quantitative correlation of infrared absorption with nuclear magnetic resonance measurements of hydrogen content in diamond films

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X‐ray photoelectron spectroscopy study of polymer surface reactions in F₂ and O₂ gases and plasmas

I. Tepermeister; H. H. Sawin

J. Vac. Sci. Technol. A 10, 3149–3157 (1992) https://doi.org/10.1116/1.577835

Abstract

View articletitled, X‐ray photoelectron spectroscopy study of polymer surface reactions in F2 and O2 gases and plasmas

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X‐ray photoemission spectroscopy studies of cesium and oxygen on GaAs(100)

T. Balasubramanian; Jianming Cao; Y. Gao

J. Vac. Sci. Technol. A 10, 3158–3165 (1992) https://doi.org/10.1116/1.577836

Abstract

View articletitled, X‐ray photoemission spectroscopy studies of cesium and oxygen on GaAs(100)

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Effects of different pretreatments on the surface structure of silicon and the adhesion of metal films

I. Kondo; T. Yoneyama; K. Kondo; O. Takenaka; A. Kinbara

J. Vac. Sci. Technol. A 10, 3166–3170 (1992) https://doi.org/10.1116/1.577837

Abstract

View articletitled, Effects of different pretreatments on the surface structure of silicon and the adhesion of metal films

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Ultraviolet ozone oxidation of Si surface studied by photoemission and surface infrared spectroscopy

Michio Niwano; Maki Suemitsu; Yutaka Ishibashi; Yuki Takeda; Nobuo Miyamoto; Koji Honma

J. Vac. Sci. Technol. A 10, 3171–3175 (1992) https://doi.org/10.1116/1.577838

Abstract

View articletitled, Ultraviolet ozone oxidation of Si surface studied by photoemission and surface infrared spectroscopy

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In situ photoreflectance study of Schottky barrier formation in InP(110)

J. S. Hwang; S. L. Tyan

J. Vac. Sci. Technol. A 10, 3176–3178 (1992) https://doi.org/10.1116/1.577839

Abstract

View articletitled, In situ photoreflectance study of Schottky barrier formation in InP(110)

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Differential method for measuring coverage‐dependent adsorption probabilities

Andrew M. Glines; Michael A. DeAngelis; A. Brad Anton

J. Vac. Sci. Technol. A 10, 3179–3183 (1992) https://doi.org/10.1116/1.577840

Abstract

View articletitled, Differential method for measuring coverage‐dependent adsorption probabilities

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Nulling optical bridge for nonintrusive temperature measurements

Daniel Guidotti; John G. Wilman

J. Vac. Sci. Technol. A 10, 3184–3192 (1992) https://doi.org/10.1116/1.577841

Abstract

View articletitled, Nulling optical bridge for nonintrusive temperature measurements

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Heat transport in cold‐wall single‐wafer low pressure chemical‐vapor‐deposition reactors

A. Hasper; J. E. J. Schmitz; J. Holleman; J. F. Verwey

J. Vac. Sci. Technol. A 10, 3193–3202 (1992) https://doi.org/10.1116/1.577842

Abstract

View articletitled, Heat transport in cold‐wall single‐wafer low pressure chemical‐vapor‐deposition reactors

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Resistivity measurements of thin film iridium on silicon

Geoffrey K. Reeves; Malcolm W. Lawn; Robert G. Elliman

J. Vac. Sci. Technol. A 10, 3203–3206 (1992) https://doi.org/10.1116/1.577843

Abstract

View articletitled, Resistivity measurements of thin film iridium on silicon

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Structural properties of Y₂O₃ stabilized ZrO₂ films deposited by reactive thermal coevaporation

J. P. Chéron; F. Tcheliebou; A. Boyer

J. Vac. Sci. Technol. A 10, 3207–3209 (1992) https://doi.org/10.1116/1.577844

Abstract

View articletitled, Structural properties of Y2O3 stabilized ZrO2 films deposited by reactive thermal coevaporation

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Sputtered neutrals mass spectrometry of organic molecules using multiphoton postionization

M. Terhorst; G. Kampwerth; E. Niehuis; A. Benninghoven

J. Vac. Sci. Technol. A 10, 3210–3215 (1992) https://doi.org/10.1116/1.577845

Abstract

View articletitled, Sputtered neutrals mass spectrometry of organic molecules using multiphoton postionization

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Temperature programmed desorption mass spectrometry of organic matrix compounds

Donald D. Beck; Nancy Somers

J. Vac. Sci. Technol. A 10, 3216–3220 (1992) https://doi.org/10.1116/1.577846

Abstract

View articletitled, Temperature programmed desorption mass spectrometry of organic matrix compounds

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Molecular‐beam experiment for adsorption kinetics and catalytic reactions studies

B. Calpini; M. Croci; R. David; R. Monot

J. Vac. Sci. Technol. A 10, 3221–3228 (1992) https://doi.org/10.1116/1.577847

Abstract

View articletitled, Molecular‐beam experiment for adsorption kinetics and catalytic reactions studies

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Design considerations for high‐flux collisionally opaque molecular beams

David C. Gray; Herbert H. Sawin

J. Vac. Sci. Technol. A 10, 3229–3238 (1992) https://doi.org/10.1116/1.577848

Abstract

View articletitled, Design considerations for high‐flux collisionally opaque molecular beams

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Ion sputter effects on HgTe, CdTe, and HgCdTe

C. M. Stahle; C. R. Helms

J. Vac. Sci. Technol. A 10, 3239–3245 (1992) https://doi.org/10.1116/1.577849

Abstract

View articletitled, Ion sputter effects on HgTe, CdTe, and HgCdTe

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Comparison of ion‐implantation‐induced damage in narrow‐gap (0.1 eV) Hg_1−xCd_xTe and Hg_1−xZn_xTe

C. Uzan‐Saguy; V. Richter; M. Shaanan; R. Kalish; R. Triboulet

J. Vac. Sci. Technol. A 10, 3246–3252 (1992) https://doi.org/10.1116/1.577850

Abstract

View articletitled, Comparison of ion‐implantation‐induced damage in narrow‐gap (0.1 eV) Hg1−xCdxTe and Hg1−xZnxTe

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Rutile‐type TiO₂ formation by ion beam dynamic mixing

S. Miyake; K. Honda; T. Kohno; Y. Setsuhara; M. Satou; A. Chayahara

J. Vac. Sci. Technol. A 10, 3253–3259 (1992) https://doi.org/10.1116/1.577851

Abstract

View articletitled, Rutile‐type TiO2 formation by ion beam dynamic mixing

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Variation of the lead content in sputtered copper–lead films due to resputtering effects

Christoph Eisenmenger‐Sittner; Anton Bergauer; Alfred Wagendristel; Walter Gärtner

J. Vac. Sci. Technol. A 10, 3260–3265 (1992) https://doi.org/10.1116/1.577852

Abstract

View articletitled, Variation of the lead content in sputtered copper–lead films due to resputtering effects

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Thin films from energetic cluster impact: A feasibility study

Hellmut Haberland; Martin Karrais; Martin Mall; Yonca Thurner

J. Vac. Sci. Technol. A 10, 3266–3271 (1992) https://doi.org/10.1116/1.577853

Abstract

View articletitled, Thin films from energetic cluster impact: A feasibility study

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Study on direct current reactive sputtering deposition of aluminum nitride thin films

F. C. Stedile; I. J. R. Baumvol; W. H. Schreiner; F. L. Freire, Jr.

J. Vac. Sci. Technol. A 10, 3272–3277 (1992) https://doi.org/10.1116/1.577854

Abstract

View articletitled, Study on direct current reactive sputtering deposition of aluminum nitride thin films

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Stress and microhardness in sputter deposited molybdenum and chromium films

B. Window; G. L. Harding; C. Horrigan; T. Bell

J. Vac. Sci. Technol. A 10, 3278–3282 (1992) https://doi.org/10.1116/1.577855

Abstract

View articletitled, Stress and microhardness in sputter deposited molybdenum and chromium films

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Use of an externally applied axial magnetic field to control ion/neutral flux ratios incident at the substrate during magnetron sputter deposition

I. Petrov; F. Adibi; J. E. Greene; W. D. Sproul; W.‐D. Münz

J. Vac. Sci. Technol. A 10, 3283–3287 (1992) https://doi.org/10.1116/1.577812

Abstract

View articletitled, Use of an externally applied axial magnetic field to control ion/neutral flux ratios incident at the substrate during magnetron sputter deposition

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Effects of target presputtering on stoichiometry of sputtered Bi–Sr–Ca–Cu–O thin films

YiFeng Yang; Ji Ung Lee; James E. Nordman

J. Vac. Sci. Technol. A 10, 3288–3291 (1992) https://doi.org/10.1116/1.577813

Abstract

View articletitled, Effects of target presputtering on stoichiometry of sputtered Bi–Sr–Ca–Cu–O thin films

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Cluster formation in the vapor produced by laser pulsing of the Y₁Ba₂Cu₃O₇ superconducting solid

M. Moalem; D. R. Olander; M. Balooch; M. J. Fluss

J. Vac. Sci. Technol. A 10, 3292–3299 (1992) https://doi.org/10.1116/1.577814

Abstract

View articletitled, Cluster formation in the vapor produced by laser pulsing of the Y1Ba2Cu3O7 superconducting solid

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Characterization of radio frequency unbalanced magnetrons

B. Window; G. L. Harding

J. Vac. Sci. Technol. A 10, 3300–3304 (1992) https://doi.org/10.1116/1.577815

Abstract

View articletitled, Characterization of radio frequency unbalanced magnetrons

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High reflectivity dielectric mirror deposition by reactive magnetron sputtering

A. Scherer; M. Walther; L. M. Schiavone; B. P. Van der Gaag; E. D. Beebe

J. Vac. Sci. Technol. A 10, 3305–3311 (1992) https://doi.org/10.1116/1.577816

Abstract

View articletitled, High reflectivity dielectric mirror deposition by reactive magnetron sputtering

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Highly reflective x‐ray mirror

Sei‐ichi Itabashi; Ikuo Okada; Takashi Kaneko; Seitaro Matsuo; Hideo Yoshihara

J. Vac. Sci. Technol. A 10, 3312–3317 (1992) https://doi.org/10.1116/1.577817

Abstract

View articletitled, Highly reflective x‐ray mirror

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Low resistivity body‐centered cubic tantalum thin films as diffusion barriers between copper and silicon

Philip Catania; James P. Doyle; Jerome J. Cuomo

J. Vac. Sci. Technol. A 10, 3318–3321 (1992) https://doi.org/10.1116/1.577818

Abstract

View articletitled, Low resistivity body‐centered cubic tantalum thin films as diffusion barriers between copper and silicon

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1/f noise in Bi₂Sr₂Ca₂Cu₃–O and its impact on bolometer performance

R. W. Zindler; R. R. Parsons

J. Vac. Sci. Technol. A 10, 3322–3324 (1992) https://doi.org/10.1116/1.577819

Abstract

View articletitled, 1/f noise in Bi2Sr2Ca2Cu3–O and its impact on bolometer performance

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Ag segregation and epitaxial Cr growth on Ag(100)

C. Krembel; M. C. Hanf; J. C. Peruchetti; D. Bolmont; G. Gewinner

J. Vac. Sci. Technol. A 10, 3325–3332 (1992) https://doi.org/10.1116/1.577820

Abstract

View articletitled, Ag segregation and epitaxial Cr growth on Ag(100)

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Ion spectroscopy gauge: Total pressure measurements down to 10⁻¹² Pa with discrimination against electron‐stimulated‐desorption ions

Fumio Watanabe

J. Vac. Sci. Technol. A 10, 3333–3339 (1992) https://doi.org/10.1116/1.577821

Abstract

View articletitled, Ion spectroscopy gauge: Total pressure measurements down to 10−12 Pa with discrimination against electron‐stimulated‐desorption ions

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Pumping characteristics of sputter ion pumps with high‐magnetic‐flux densities in an ultrahigh‐vacuum range

Kenji Ohara; Ichiro Ando; Nagamitsu Yoshimura

J. Vac. Sci. Technol. A 10, 3340–3343 (1992) https://doi.org/10.1116/1.577822

Abstract

View articletitled, Pumping characteristics of sputter ion pumps with high‐magnetic‐flux densities in an ultrahigh‐vacuum range

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Design and evaluation of a primary high‐vacuum standard

W. Jitschin; K. Jousten; D. Wandrey

J. Vac. Sci. Technol. A 10, 3344–3351 (1992) https://doi.org/10.1116/1.577823

Abstract

View articletitled, Design and evaluation of a primary high‐vacuum standard

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Pumping performance of a new type of hybrid molecular pump

Dechun Ba; Naiheng Yang; Xiaodong Wang; Shijin Pang; Yu Zhu; Xiaozhen Wang

J. Vac. Sci. Technol. A 10, 3352–3355 (1992) https://doi.org/10.1116/1.577824

Abstract

View articletitled, Pumping performance of a new type of hybrid molecular pump

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Kinetics of morphological change during annealing of amorphous yttria

S. N. Mukherjee; C. R. Aita

J. Vac. Sci. Technol. A 10, 3356–3358 (1992) https://doi.org/10.1116/1.577825

Abstract

View articletitled, Kinetics of morphological change during annealing of amorphous yttria

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Potassium Auger emission by K⁺ ion bombardment of Ag surface

I. Terzić; M. M. Tošić; Z. Rakočević

J. Vac. Sci. Technol. A 10, 3359–3361 (1992) https://doi.org/10.1116/1.577826

Abstract

View articletitled, Potassium Auger emission by K+ ion bombardment of Ag surface

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Cyclic annealing‐induced microstructural and crystallographic changes in crystalline yttria films on silica

S. N. Mukherjee; C. R. Aita

J. Vac. Sci. Technol. A 10, 3362–3364 (1992) https://doi.org/10.1116/1.577827

Abstract

View articletitled, Cyclic annealing‐induced microstructural and crystallographic changes in crystalline yttria films on silica

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Growth of sodium clusters at the surface of Na β″‐alumina crystals induced by electron bombardment

C. A. Achete; F. L. Freire, Jr.

J. Vac. Sci. Technol. A 10, 3365–3367 (1992) https://doi.org/10.1116/1.577828

Abstract

View articletitled, Growth of sodium clusters at the surface of Na β″‐alumina crystals induced by electron bombardment

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Attempt to grow diamond phase carbon films from an organic solution

Yoshikatsu Namba

J. Vac. Sci. Technol. A 10, 3368–3370 (1992) https://doi.org/10.1116/1.577829

Abstract

View articletitled, Attempt to grow diamond phase carbon films from an organic solution

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Uniformity of targets erosion and magnetic film thickness distribution in the target‐facing‐type sputtering method

Qihua Fan

J. Vac. Sci. Technol. A 10, 3371–3375 (1992) https://doi.org/10.1116/1.577830

Abstract

View articletitled, Uniformity of targets erosion and magnetic film thickness distribution in the target‐facing‐type sputtering method

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Utilizing a portable cycle purge nitrogen venturi for removal of process gases in semiconductor processing gas systems

Jeffrey P. Fournier; Michael E. Elta

J. Vac. Sci. Technol. A 10, 3376–3377 (1992) https://doi.org/10.1116/1.577831

View articletitled, Utilizing a portable cycle purge nitrogen venturi for removal of process gases in semiconductor processing gas systems

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Errors in curve fitting of profilometer data

John H. Selverian

J. Vac. Sci. Technol. A 10, 3378–3382 (1992) https://doi.org/10.1116/1.577832

Abstract

View articletitled, Errors in curve fitting of profilometer data

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Erratum: ‘‘Imaging monolayer structure by means of Auger electrons’’ [J. Vac. Sci. Technol. A 10, 158 (1992)]

Douglas G. Frank; Oliver M. R. Chyan; Teresa Golden; Arthur T. Hubbard

J. Vac. Sci. Technol. A 10, 3383 (1992) https://doi.org/10.1116/1.577833

View articletitled, Erratum: ‘‘Imaging monolayer structure by means of Auger electrons’’ [J. Vac. Sci. Technol. A 10, 158 (1992)]

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