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Scanning tunneling microscopy of DNA: The chemical modification of gold surfaces for immobilization of DNA
L. A. Bottomley; J. N. Haseltine; D. P. Allison; R. J. Warmack; T. Thundat; R. A. Sachleben; G. M. Brown; R. P. Woychik; K. Bruce Jacobson; T. L. Ferrell
J. Vac. Sci. Technol. A 10, 591–595 (1992)
https://doi.org/10.1116/1.577735
Intramolecular imaging of physisorbed molecules with the scanning tunneling microscope at liquid/graphite interface
J. Vac. Sci. Technol. A 10, 600–602 (1992)
https://doi.org/10.1116/1.577737
Possible many‐body effects in scanning tunneling microscopy of molecular adsorbates
J. Vac. Sci. Technol. A 10, 603–605 (1992)
https://doi.org/10.1116/1.577738
Surface structural study of poly‐hydroxy‐aniline and aniline‐(3‐aminophenyl boronic acid) copolymer films
J. Vac. Sci. Technol. A 10, 606–610 (1992)
https://doi.org/10.1116/1.577739
Sub‐centimeter micromachined electron microscope
J. Vac. Sci. Technol. A 10, 611–616 (1992)
https://doi.org/10.1116/1.577696
Direct synthesis of GaAs quantum‐wire structures by molecular‐beam epitaxy on (311) surfaces
J. Vac. Sci. Technol. A 10, 617–622 (1992)
https://doi.org/10.1116/1.577697
Polybutadiene emulsion particles observed by scanning tunneling microscopy
J. Vac. Sci. Technol. A 10, 623–626 (1992)
https://doi.org/10.1116/1.577698
Atomic force microscopy of deoxyribonucleic acid strands adsorbed on mica: The effect of humidity on apparent width and image contrast
J. Vac. Sci. Technol. A 10, 630–635 (1992)
https://doi.org/10.1116/1.577700
Nanometer‐scale instability at sliding interfaces: Tribological considerations in scanning tunneling microscopy
J. Vac. Sci. Technol. A 10, 636–640 (1992)
https://doi.org/10.1116/1.577701
First‐principles calculations of electronic subband structure and elementary excitations of a quantum wire
J. Vac. Sci. Technol. A 10, 645–650 (1992)
https://doi.org/10.1116/1.577703
Scanning tunneling microscopy study of supported Pt and Pd catalysts: Microstructure and morphology
J. Vac. Sci. Technol. A 10, 651–656 (1992)
https://doi.org/10.1116/1.577704
Si(111)–(2√3×2√3)Sn reconstruction studied by ion scattering spectrometry and scanning tunneling microscopy
J. Vac. Sci. Technol. A 10, 657–663 (1992)
https://doi.org/10.1116/1.577705
Optical study of strained quantum well wires
I‐Hsing Tan; Takashi Yasuda; Richard Mirin; David Lishan; Evelyn Hu; John Bowers; James Merz; Ming Yuan He; Anthony Evans
J. Vac. Sci. Technol. A 10, 664–668 (1992)
https://doi.org/10.1116/1.577706
Faceting, reconstruction, and defect microstructure at ceramic surfaces revealed by atomic force microscopy
J. Vac. Sci. Technol. A 10, 669–673 (1992)
https://doi.org/10.1116/1.577707
Scanning probe metrology
J. Vac. Sci. Technol. A 10, 674–679 (1992)
https://doi.org/10.1116/1.577708
Tip–sample forces in scanning probe microscopy in air and vacuum
J. Vac. Sci. Technol. A 10, 680–683 (1992)
https://doi.org/10.1116/1.577709
Nonplanar step and terrace configurated surfaces as templates for crystal growth dynamics studies
J. Vac. Sci. Technol. A 10, 691–696 (1992)
https://doi.org/10.1116/1.577711
InGaAs quantum well wires grown on patterned GaAs substrates
Richard P. Mirin; I‐Hsing Tan; Helge Weman; Marilyn Leonard; Takashi Yasuda; John E. Bowers; Evelyn L. Hu
J. Vac. Sci. Technol. A 10, 697–700 (1992)
https://doi.org/10.1116/1.577712
Low‐resistivity p‐type ZnSe:N grown by molecular beam epitaxy using a nitrogen free‐radical source
J. Vac. Sci. Technol. A 10, 701–704 (1992)
https://doi.org/10.1116/1.577713
Role of ion energy in ion beam oxidation of semiconductors: Experimental study and model
J. Vac. Sci. Technol. A 10, 713–718 (1992)
https://doi.org/10.1116/1.577715
Stacked oxide as trench gate dielectric
J. Vac. Sci. Technol. A 10, 728–732 (1992)
https://doi.org/10.1116/1.577717
Electrical and dielectric properties of thin film BaTiO3 capacitors deposited by radio frequency magnetron sputtering
J. Vac. Sci. Technol. A 10, 733–736 (1992)
https://doi.org/10.1116/1.578153
Growth sequence dependence of interdiffusion at the GaAs/In0.53Ga0.47As strained‐layer heterojunction
J. Vac. Sci. Technol. A 10, 737–740 (1992)
https://doi.org/10.1116/1.578154
Homojunction band discontinuities induced by dipolar intralayers: Al–As in Ge
J. Vac. Sci. Technol. A 10, 741–743 (1992)
https://doi.org/10.1116/1.578155
Internally detected electron photoexcitation spectroscopy on heterostructures
J. Vac. Sci. Technol. A 10, 744–748 (1992)
https://doi.org/10.1116/1.578156
Surface and interface states for GaAs(100) (1×1) and (4×2)‐c(8×2) reconstructions
I. M. Vitomirov; A. D. Raisanen; A. C. Finnefrock; R. E. Viturro; S. Chang; L. J. Brillson; P. D. Kirchner; G. D. Pettit; J. M. Woodall
J. Vac. Sci. Technol. A 10, 749–753 (1992)
https://doi.org/10.1116/1.578157
Amorphous Si as an interfacial control layer for SiNx/InP
J. Vac. Sci. Technol. A 10, 754–758 (1992)
https://doi.org/10.1116/1.578158
Enhanced structural and electronic properties of strained Ge(100) films grown by molecular‐beam epitaxy with a Sb surfactant layer
J. Vac. Sci. Technol. A 10, 759–764 (1992)
https://doi.org/10.1116/1.578159
Interfacial band alignments for LaF3, NdF3, and TmF3 heterojunctions on Si(111)
J. Vac. Sci. Technol. A 10, 765–768 (1992)
https://doi.org/10.1116/1.578160
Epitaxial relations and electrical properties of low‐temperature‐grown CaF2 on Si(111)
J. Vac. Sci. Technol. A 10, 769–774 (1992)
https://doi.org/10.1116/1.578161
Calculations of the barrier height and charge distribution of a metal–dielectric interface
J. Vac. Sci. Technol. A 10, 775–780 (1992)
https://doi.org/10.1116/1.578162
Si/SiO2 interfaces formed by remote plasma‐enhanced chemical vapor deposition of SiO2 on plasma‐processed Si substrates
J. Vac. Sci. Technol. A 10, 781–787 (1992)
https://doi.org/10.1116/1.578163
Stacked gates with doped μc‐Si electrodes and SiO2 dielectrics, both deposited by remote plasma‐enhanced chemical vapor deposition
J. Vac. Sci. Technol. A 10, 788–791 (1992)
https://doi.org/10.1116/1.578164
Dry surface cleaning in integrated vacuum reactive ion etching processes
J. Vac. Sci. Technol. A 10, 792–794 (1992)
https://doi.org/10.1116/1.578165
Preoxidation Si cleaning and its impact on metal oxide semiconductor characteristics
J. Vac. Sci. Technol. A 10, 795–801 (1992)
https://doi.org/10.1116/1.577674
Carbon and oxygen removal from silicon (100) surfaces by remote plasma cleaning techniques
J. Vac. Sci. Technol. A 10, 817–822 (1992)
https://doi.org/10.1116/1.577678
Excimer laser cleaning and processing of Si(100) substrates in ultrahigh vacuum and reactive gases
J. Vac. Sci. Technol. A 10, 823–828 (1992)
https://doi.org/10.1116/1.577679
III–V surface processing
J. Vac. Sci. Technol. A 10, 829–836 (1992)
https://doi.org/10.1116/1.577680
Surface chemistry of GaAs treated with buffered HF and NH4F solutions: Slow reactions of process residuals
J. Vac. Sci. Technol. A 10, 837–842 (1992)
https://doi.org/10.1116/1.577681
Temperature optimization in an azimuthally symmetric single‐wafer chemical vapor deposition reactor: The low pressure regime
J. Vac. Sci. Technol. A 10, 843–849 (1992)
https://doi.org/10.1116/1.577682
Application of computational fluid modeling to the development of semiconductor chemical vapor deposition systems
J. Vac. Sci. Technol. A 10, 850–855 (1992)
https://doi.org/10.1116/1.577683
Surface analysis studies of copper chemical vapor deposition from 1,5‐cyclooctadiene‐copper(I)‐hexafluoroacetylacetonate
J. Vac. Sci. Technol. A 10, 863–868 (1992)
https://doi.org/10.1116/1.577685
Nucleation and growth of silicon on SiO2 during SiH4 low pressure chemical vapor deposition as studied by hydrogen desorption titration
J. Vac. Sci. Technol. A 10, 869–873 (1992)
https://doi.org/10.1116/1.577686
Transmission electron microscopy and vibrational spectroscopy studies of undoped and doped Si,H and Si,C:H films
J. Vac. Sci. Technol. A 10, 874–880 (1992)
https://doi.org/10.1116/1.577687
Structures of selected boranes and carboranes
J. Vac. Sci. Technol. A 10, 881–885 (1992)
https://doi.org/10.1116/1.577688
Formation of compound semiconductors by electrochemical atomic layer epitaxy
J. Vac. Sci. Technol. A 10, 886–891 (1992)
https://doi.org/10.1116/1.577689
Low temperature, low pressure CdZnS films produced by metalorganic chemical vapor deposition
J. Vac. Sci. Technol. A 10, 897–902 (1992)
https://doi.org/10.1116/1.577691
Dopant diffusion in silicides: Effect of diffusion paths
J. Vac. Sci. Technol. A 10, 907–911 (1992)
https://doi.org/10.1116/1.577693
Reduction in diffusion of copper in parylene by thermal pretreatment
J. Vac. Sci. Technol. A 10, 916–919 (1992)
https://doi.org/10.1116/1.577695
Adsorption kinetics of n‐alkyl thiols on gold studied by second harmonic generation and x‐ray photoelectron spectroscopy
J. Vac. Sci. Technol. A 10, 926–929 (1992)
https://doi.org/10.1116/1.577879
Diffuse optical reflectivity measurements on GaAs during molecular‐beam epitaxy processing
J. Vac. Sci. Technol. A 10, 930–933 (1992)
https://doi.org/10.1116/1.577880
In situ real‐time ellipsometry for film thickness measurement and control
J. Vac. Sci. Technol. A 10, 934–938 (1992)
https://doi.org/10.1116/1.577881
In situ characterization of sputtered thin films using a normal incidence laser reflectometer
J. Vac. Sci. Technol. A 10, 939–944 (1992)
https://doi.org/10.1116/1.577882
Monitoring of the aluminum nitride sputtering deposition by soft x‐ray emission spectroscopy
J. Vac. Sci. Technol. A 10, 945–949 (1992)
https://doi.org/10.1116/1.577883
Silicon nitride/silicon oxynitride/silicon dioxide thin film multilayer characterized by variable angle spectroscopic ellipsometry
J. Vac. Sci. Technol. A 10, 950–954 (1992)
https://doi.org/10.1116/1.577884
Synthesis of boron nitride ultrathin films: The bonding and chemistry of ammonia and hydrazine on Ru(0001) and B/Ru(0001) surfaces
J. Vac. Sci. Technol. A 10, 955–959 (1992)
https://doi.org/10.1116/1.577885
Electron beam patterning of epitaxial CaF2 and Ca0.5Sr0.5F2/(100)GaAs
J. Vac. Sci. Technol. A 10, 960–964 (1992)
https://doi.org/10.1116/1.577886
Synthesis and characterization of SiO2 films deposited using tetraethylorthosilicate/ozone at low processing pressures (10−1 to 10−3)
J. Vac. Sci. Technol. A 10, 970–973 (1992)
https://doi.org/10.1116/1.577888
Polarization of electronic charge and distortion of surface geometry by a scanning tunneling microscopy tip: Si(100)
J. Vac. Sci. Technol. A 10, 974–977 (1992)
https://doi.org/10.1116/1.577889
Theoretical studies of clean and hydrogenated diamond (100) by molecular mechanics
J. Vac. Sci. Technol. A 10, 978–984 (1992)
https://doi.org/10.1116/1.577890
Si(111)(7×7) dangling bond contribution to surface recombination
J. Vac. Sci. Technol. A 10, 985–989 (1992)
https://doi.org/10.1116/1.577891
Minority‐carrier lifetime and photon recycling in n‐GaAs
J. Vac. Sci. Technol. A 10, 990–995 (1992)
https://doi.org/10.1116/1.577892
Amorphization of c‐Si by the sputter deposition of Au studied by x‐ray photoelectron diffraction
J. Vac. Sci. Technol. A 10, 1002–1005 (1992)
https://doi.org/10.1116/1.578193
Nondestructive evaluation of silicon‐on‐insulator substrates using x‐ray double crystal topography
J. Vac. Sci. Technol. A 10, 1006–1011 (1992)
https://doi.org/10.1116/1.578194
Interfacial reactions in the Co/Si/GaAs and Si/Co/GaAs systems
J. Vac. Sci. Technol. A 10, 1020–1028 (1992)
https://doi.org/10.1116/1.578196
Limits on the use of tunneling to describe the Pd–Ge ohmic contact to GaAs
J. Vac. Sci. Technol. A 10, 1029–1034 (1992)
https://doi.org/10.1116/1.578197
Influence of monoenergetic surface state occupation on Fermi level pinning of metal–GaAs interfaces
J. Vac. Sci. Technol. A 10, 1035–1040 (1992)
https://doi.org/10.1116/1.578198
Kinetics of particle formation in the sputtering and reactive ion etching of silicon
J. Vac. Sci. Technol. A 10, 1041–1047 (1992)
https://doi.org/10.1116/1.578199
Powder dynamics in very high frequency silane plasmas
J. Vac. Sci. Technol. A 10, 1048–1052 (1992)
https://doi.org/10.1116/1.578200
Plasma particulate contamination control. II. Self‐cleaning tool design
J. Vac. Sci. Technol. A 10, 1053–1059 (1992)
https://doi.org/10.1116/1.578201
Interferometric thermometry measurements of silicon wafer temperatures during plasma processing
J. Vac. Sci. Technol. A 10, 1060–1064 (1992)
https://doi.org/10.1116/1.578202
Low temperature etch chuck: Modeling and experimental results of heat transfer and wafer temperature
J. Vac. Sci. Technol. A 10, 1065–1070 (1992)
https://doi.org/10.1116/1.578203
Frequency effects in silane plasmas for plasma enhanced chemical vapor deposition
J. Vac. Sci. Technol. A 10, 1080–1085 (1992)
https://doi.org/10.1116/1.578205
Theoretical and experimental study of large aperture low energy e‐beam source for semiconductor processing
J. Vac. Sci. Technol. A 10, 1086–1091 (1992)
https://doi.org/10.1116/1.578206
Generation of high‐density O2 supermagnetron plasma for highly uniform plasma etching
J. Vac. Sci. Technol. A 10, 1092–1095 (1992)
https://doi.org/10.1116/1.578207
Aluminum–4% Cu interconnect etching in a low‐pressure magnetically enhanced reactor
J. Vac. Sci. Technol. A 10, 1100–1105 (1992)
https://doi.org/10.1116/1.578209
Flow and transport modeling of a low pressure plasma etching system
J. Vac. Sci. Technol. A 10, 1113–1117 (1992)
https://doi.org/10.1116/1.578211
Reactive ion etching of polyimidesiloxanes in fluorine‐containing discharges
J. Vac. Sci. Technol. A 10, 1124–1127 (1992)
https://doi.org/10.1116/1.578213
Ballistic transport‐reaction prediction of film conformality in tetraethoxysilane O2 plasma enhanced deposition of silicon dioxide
J. Vac. Sci. Technol. A 10, 1128–1134 (1992)
https://doi.org/10.1116/1.578214
Diagnostics of direct‐current‐magnetron discharges by the emission‐selected computer‐tomography technique
J. Vac. Sci. Technol. A 10, 1135–1139 (1992)
https://doi.org/10.1116/1.578215
Magnetron etching of GaAs: Etch characteristics and surface characterization
J. Vac. Sci. Technol. A 10, 1147–1151 (1992)
https://doi.org/10.1116/1.578217
Evaluation of sol‐gel processing as a method for fabricating spherical‐shell silica aerogel inertial confinement fusion targets
J. Vac. Sci. Technol. A 10, 1152–1157 (1992)
https://doi.org/10.1116/1.578218
Ion microtomography and particle‐induced x‐ray emission analysis of direct drive inertial confinement fusion targets
A. J. Antolak; A. E. Pontau; D. H. Morse; D. L. Weirup; D. W. Heikkinen; M. Cholewa; G. S. Bench; G. J. F. Legge
J. Vac. Sci. Technol. A 10, 1164–1169 (1992)
https://doi.org/10.1116/1.578220
Impurity and recycling control with gettering in the Advanced Toroidal Facility
J. Vac. Sci. Technol. A 10, 1170–1173 (1992)
https://doi.org/10.1116/1.578221
Deposition of deuterium and metals on divertor tiles in the DIII–D tokamak
J. Vac. Sci. Technol. A 10, 1174–1179 (1992)
https://doi.org/10.1116/1.578222
TiN film coatings on alumina radio frequency windows
J. Vac. Sci. Technol. A 10, 1180–1184 (1992)
https://doi.org/10.1116/1.578223
Simple aluminum gasket for use with both stainless steel and aluminum flanges
J. Vac. Sci. Technol. A 10, 1185–1187 (1992)
https://doi.org/10.1116/1.578224
Effects of surfaces on H‐atom concentration in pulsed and continuous discharges
J. Vac. Sci. Technol. A 10, 1188–1192 (1992)
https://doi.org/10.1116/1.578225
Appearance mass spectrometry of neutral radicals in radio frequency plasmas
J. Vac. Sci. Technol. A 10, 1193–1200 (1992)
https://doi.org/10.1116/1.578226
Time‐resolved measurements of electron and ion concentrations in low‐frequency sulfur hexafluoride discharges
J. Vac. Sci. Technol. A 10, 1201–1206 (1992)
https://doi.org/10.1116/1.578227
Langmuir probe measurements of the electron energy distribution function in radio‐frequency plasmas
J. Vac. Sci. Technol. A 10, 1207–1211 (1992)
https://doi.org/10.1116/1.578228
Influence of polymer formation on the angular dependence of reactive ion beam etching
J. Vac. Sci. Technol. A 10, 1212–1216 (1992)
https://doi.org/10.1116/1.578229
High selectivity electron cyclotron resonance etching of submicron polysilicon gate structures
J. Vac. Sci. Technol. A 10, 1217–1226 (1992)
https://doi.org/10.1116/1.578230
SiO2/Si etching with CHF3 in a high‐field magnetron
J. Vac. Sci. Technol. A 10, 1227–1231 (1992)
https://doi.org/10.1116/1.578231
Electron cycloton resonance etching of aluminum alloys with BCl3–Cl2–N2
J. Vac. Sci. Technol. A 10, 1232–1237 (1992)
https://doi.org/10.1116/1.578232
Recycling and particle control in DIII–D
J. Vac. Sci. Technol. A 10, 1244–1251 (1992)
https://doi.org/10.1116/1.578234
Initial boronization of the DIII–D tokamak
J. Vac. Sci. Technol. A 10, 1252–1255 (1992)
https://doi.org/10.1116/1.578235
Plasma–materials interaction issues for the International Thermonuclear Experimental Reactor (ITER)
J. Vac. Sci. Technol. A 10, 1256–1264 (1992)
https://doi.org/10.1116/1.578236
Ion and neutral energies in a multipolar electron cyclotron resonance plasma source
J. Vac. Sci. Technol. A 10, 1265–1269 (1992)
https://doi.org/10.1116/1.578237
Plasma uniformity and power deposition in electron cyclotron resonance etch tools
J. Vac. Sci. Technol. A 10, 1270–1275 (1992)
https://doi.org/10.1116/1.578238
Characterization of a large volume electron cyclotron resonance plasma for etching and deposition of materials
J. Vac. Sci. Technol. A 10, 1276–1280 (1992)
https://doi.org/10.1116/1.578239
Investigation of the influence of electromagnetic excitation on electron cyclotron resonance discharge properties
J. Vac. Sci. Technol. A 10, 1281–1287 (1992)
https://doi.org/10.1116/1.578240
Poly‐Si etching using electron cyclotron resonance microwave plasma sources with multipole confinement
J. Vac. Sci. Technol. A 10, 1295–1302 (1992)
https://doi.org/10.1116/1.578242
Anisotropic highly selective electron cyclotron resonance plasma etching of polysilicon
J. Vac. Sci. Technol. A 10, 1303–1306 (1992)
https://doi.org/10.1116/1.578243
Low temperature etching of silicon trenches with SF6 in an electron cyclotron resonance reactor
J. Vac. Sci. Technol. A 10, 1313–1317 (1992)
https://doi.org/10.1116/1.578245
Surface damage threshold of Si and SiO2 in electron‐cyclotron‐resonance plasmas
J. Vac. Sci. Technol. A 10, 1318–1324 (1992)
https://doi.org/10.1116/1.578246
X‐ray diagnostics for electron cyclotron resonance processing plasmas
J. Vac. Sci. Technol. A 10, 1325–1330 (1992)
https://doi.org/10.1116/1.578247
Modeling of magnetron etching discharges
J. Vac. Sci. Technol. A 10, 1344–1348 (1992)
https://doi.org/10.1116/1.578250
Numerical model of bombarding ions energy distribution function in magnetron discharge
J. Vac. Sci. Technol. A 10, 1349–1351 (1992)
https://doi.org/10.1116/1.578251
X‐ray photoelectron spectroscopic study of the interaction of low energy carbon ions with GaAs and InP
J. Vac. Sci. Technol. A 10, 1358–1364 (1992)
https://doi.org/10.1116/1.578253
X‐ray photoelectron spectroscopic study of the interactions of fluorine ions with gallium arsenide
J. Vac. Sci. Technol. A 10, 1365–1370 (1992)
https://doi.org/10.1116/1.578254
Experiments on helicon plasma sources
J. Vac. Sci. Technol. A 10, 1389–1401 (1992)
https://doi.org/10.1116/1.578256
Characterization of biased electron cyclotron resonance deposited oxides
J. Vac. Sci. Technol. A 10, 1402–1406 (1992)
https://doi.org/10.1116/1.578257
Mass spectrometric study of tetraethoxysilane and tetraethoxysilane–oxygen plasmas in a diode type radio‐frequency reactor
J. Vac. Sci. Technol. A 10, 1407–1413 (1992)
https://doi.org/10.1116/1.578258
Diamondlike carbon films sputter deposited with an electron cyclotron resonance reactor
J. Vac. Sci. Technol. A 10, 1414–1422 (1992)
https://doi.org/10.1116/1.578259
Diamond deposition in a permanent magnet microwave electron cyclotron resonance discharge
J. Vac. Sci. Technol. A 10, 1423–1425 (1992)
https://doi.org/10.1116/1.578260
Detection of reactions and changes in thin film morphology using stress measurements
J. Vac. Sci. Technol. A 10, 1426–1441 (1992)
https://doi.org/10.1116/1.578261
Effects of initial growth conditions on the stress profiles of Mo sputtered onto both moving and stationary substrates
J. Vac. Sci. Technol. A 10, 1442–1445 (1992)
https://doi.org/10.1116/1.578262
Residual stress and the effect of implanted argon in films of zirconium nitride made by physical vapor deposition
J. Vac. Sci. Technol. A 10, 1446–1452 (1992)
https://doi.org/10.1116/1.578263
Vapor transport epitaxy, a novel growth technique for compound semiconductors
J. Vac. Sci. Technol. A 10, 1453–1457 (1992)
https://doi.org/10.1116/1.578264
Spin superlattice formation in ZnSe‐based diluted magnetic semiconductor heterostructures
J. Vac. Sci. Technol. A 10, 1458–1461 (1992)
https://doi.org/10.1116/1.578265
Graded refractive index silicon oxynitride thin film characterized by spectroscopic ellipsometry
J. Vac. Sci. Technol. A 10, 1462–1466 (1992)
https://doi.org/10.1116/1.578266
Preparation, characterization, and chemical properties of ultrathin MgO films on Mo(100)
J. Vac. Sci. Technol. A 10, 1467–1471 (1992)
https://doi.org/10.1116/1.578267
In situ characterization of thin‐film defect generation using total internal reflection microscopy
J. Vac. Sci. Technol. A 10, 1472–1478 (1992)
https://doi.org/10.1116/1.578268
Process effects on structural properties of TiO2 thin films by reactive sputtering
J. Vac. Sci. Technol. A 10, 1479–1482 (1992)
https://doi.org/10.1116/1.578269
Effects of space charge on ion energy in ionized cluster beam film deposition
J. Vac. Sci. Technol. A 10, 1488–1492 (1992)
https://doi.org/10.1116/1.578271
Effect of deposition technique on the As‐deposited microstructure of copper thin films
J. Vac. Sci. Technol. A 10, 1493–1496 (1992)
https://doi.org/10.1116/1.578272
Study of the oxygen transport through Ag (110), Ag (poly), and Ag 2.0 Zr
J. Vac. Sci. Technol. A 10, 1497–1502 (1992)
https://doi.org/10.1116/1.578273
Synthesis and structural characteristics of ion‐beam sputtered multilayer Ag/Al thin films
J. Vac. Sci. Technol. A 10, 1503–1507 (1992)
https://doi.org/10.1116/1.578274
Micrometer patterning of phthalocyanine derivatives by selective chemical vapor deposition method
J. Vac. Sci. Technol. A 10, 1508–1510 (1992)
https://doi.org/10.1116/1.578034
X‐ray photoelectron spectroscopy characterization of a nonsuperconducting Y–Ba–Cu–O superconductor–normal‐metal–superconductor barrier material
J. Vac. Sci. Technol. A 10, 1511–1513 (1992)
https://doi.org/10.1116/1.578035
Chemical vapor depositing of metal fluorides
J. Vac. Sci. Technol. A 10, 1514–1517 (1992)
https://doi.org/10.1116/1.578036
Manifestation of electric dipole selection rules in angle resolved photoemission spectra from zinc blende semiconductors
J. Vac. Sci. Technol. A 10, 1526–1530 (1992)
https://doi.org/10.1116/1.578039
Nucleation and growth of DyBa2Cu3O7−x thin films on SrTiO3 substrates studied by transmission electron microscopy and atomic force microscopy
J. Vac. Sci. Technol. A 10, 1531–1536 (1992)
https://doi.org/10.1116/1.578040
Study of the surface morphology and growth mode of in situ ion‐beam sputter‐deposited YBa2Cu3O7−δ thin films
D. J. Lichtenwalner; O. Auciello; R. R. Woolcott, Jr.; C. N. Soble, II; R. Adu‐Poku; R. Chapman; S. H. Rou; J. Duarte; A. I. Kingon
J. Vac. Sci. Technol. A 10, 1537–1543 (1992)
https://doi.org/10.1116/1.578041
Surface and interface properties of superconducting YBa2Cu3O7−x thin films on GaAs using yttrium stablized ZrO2/Si3N4 as a buffer layer
J. Vac. Sci. Technol. A 10, 1544–1546 (1992)
https://doi.org/10.1116/1.578042
Study of YBaCuO on W/Si by x‐ray photoelectron spectroscopy
J. Vac. Sci. Technol. A 10, 1547–1553 (1992)
https://doi.org/10.1116/1.578043
Integration of ferroelectric thin films into nonvolatile memories
J. Vac. Sci. Technol. A 10, 1554–1561 (1992)
https://doi.org/10.1116/1.578044
Recent advances in physical vapor growth processes for ferroelectric thin films
J. Vac. Sci. Technol. A 10, 1569–1577 (1992)
https://doi.org/10.1116/1.578046
Plasma‐enhanced metalorganic chemical vapor deposition of BaTiO3 films
J. Vac. Sci. Technol. A 10, 1578–1583 (1992)
https://doi.org/10.1116/1.578047
Structural and chemical composition investigation of thin lead zirconate titanate films
J. Vac. Sci. Technol. A 10, 1584–1591 (1992)
https://doi.org/10.1116/1.578048
Atom assisted sputtering yield amplification
J. Vac. Sci. Technol. A 10, 1592–1596 (1992)
https://doi.org/10.1116/1.578049