Journal of Vacuum Science & Technology A

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The American Vacuum Society—1973 to 1983

J. L. Vossen; Nancy L. Hammond

J. Vac. Sci. Technol. A 1, 1351–1361 (1983) https://doi.org/10.1116/1.572022

Abstract

View articletitled, The American Vacuum Society—1973 to 1983

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The reactive sputtering of tantalum oxide: Compositional uniformity, phases, and transport mechanisms

T. M. Reith; P. J. Ficalora

J. Vac. Sci. Technol. A 1, 1362–1369 (1983) https://doi.org/10.1116/1.572023

Abstract

View articletitled, The reactive sputtering of tantalum oxide: Compositional uniformity, phases, and transport mechanisms

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Transparent conducting zinc oxide and indium–tin oxide films prepared by modified reactive planar magnetron sputtering

S. Maniv; C. J. Miner; W. D. Westwood

J. Vac. Sci. Technol. A 1, 1370–1375 (1983) https://doi.org/10.1116/1.572024

Abstract

View articletitled, Transparent conducting zinc oxide and indium–tin oxide films prepared by modified reactive planar magnetron sputtering

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Importance of chain reactions in the plasma deposition of hydrogenated amorphous silicon

Ivan Haller

J. Vac. Sci. Technol. A 1, 1376–1382 (1983) https://doi.org/10.1116/1.572025

Abstract

View articletitled, Importance of chain reactions in the plasma deposition of hydrogenated amorphous silicon

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Erosion of polymer thin films during ion bombardment

M. Braun; B. Emmoth; G. M. Mladenov; H. E. Sätherblom

J. Vac. Sci. Technol. A 1, 1383–1387 (1983) https://doi.org/10.1116/1.572026

Abstract

View articletitled, Erosion of polymer thin films during ion bombardment

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Sputtering negative carbon ions from cesiated graphite surfaces

A. Pargellis; M. Seidl

J. Vac. Sci. Technol. A 1, 1388–1393 (1983) https://doi.org/10.1116/1.572027

Abstract

View articletitled, Sputtering negative carbon ions from cesiated graphite surfaces

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Influence of the sputtering gas pressure on deposition profiles

G. González‐Díaz; I. Mártil; F. Sánchez‐Quesada; M. Rodríguez‐Vidal; A. Gras‐Martí; J. A. Vallés‐Abarca

J. Vac. Sci. Technol. A 1, 1394–1397 (1983) https://doi.org/10.1116/1.572028

Abstract

View articletitled, Influence of the sputtering gas pressure on deposition profiles

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Ion‐bombardment‐induced whisker formation on graphite

J. A. Floro; S. M. Rossnagel; R. S. Robinson

J. Vac. Sci. Technol. A 1, 1398–1402 (1983) https://doi.org/10.1116/1.572029

Abstract

View articletitled, Ion‐bombardment‐induced whisker formation on graphite

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Measurements of angular evaporation characteristics of sources

J. A. Dobrowolski; M. Ranger; R. L. Wilkinson

J. Vac. Sci. Technol. A 1, 1403–1408 (1983) https://doi.org/10.1116/1.572030

Abstract

View articletitled, Measurements of angular evaporation characteristics of sources

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Preparation of Pb–Bi film by alloy evaporation II. Microstructure and morphology

H.‐C. W. Huang; C. M. Serrano

J. Vac. Sci. Technol. A 1, 1409–1415 (1983) https://doi.org/10.1116/1.572031

Abstract

View articletitled, Preparation of Pb–Bi film by alloy evaporation II. Microstructure and morphology

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A technique using a Wheatstone bridge to study the minute differences in nucleation and growth of two metallic films

U. K. Chaturvedi; S. K. Agrawal; A. K. Nigam

J. Vac. Sci. Technol. A 1, 1416–1419 (1983) https://doi.org/10.1116/1.572032

Abstract

View articletitled, A technique using a Wheatstone bridge to study the minute differences in nucleation and growth of two metallic films

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Electrical, optical, and structural properties of semitransparent metallic layers

S. Kar; R. Varghese; S. Bhattacharya

J. Vac. Sci. Technol. A 1, 1420–1424 (1983) https://doi.org/10.1116/1.572033

Abstract

View articletitled, Electrical, optical, and structural properties of semitransparent metallic layers

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Chemical sputtering of carbon by sub‐eV atomic hydrogen: New results and a critical comparison with previous data relevant to fusion applications

P. C. Stangeby; O. Auciello; A. A. Haasz

J. Vac. Sci. Technol. A 1, 1425–1429 (1983) https://doi.org/10.1116/1.572034

Abstract

View articletitled, Chemical sputtering of carbon by sub‐eV atomic hydrogen: New results and a critical comparison with previous data relevant to fusion applications

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Study of the discharge cleaning process in JIPP T‐II torus by residual gas analyzer

N. Noda; S. Hirokura; Y. Taniguchi; S. Tanahashi

J. Vac. Sci. Technol. A 1, 1430–1434 (1983) https://doi.org/10.1116/1.572035

Abstract

View articletitled, Study of the discharge cleaning process in JIPP T‐II torus by residual gas analyzer

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Measurement of the recombination rate coefficient of a tokamak vacuum vessel wall

H. Howe; R. Langley

J. Vac. Sci. Technol. A 1, 1435–1440 (1983) https://doi.org/10.1116/1.572036

Abstract

View articletitled, Measurement of the recombination rate coefficient of a tokamak vacuum vessel wall

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Reaction rates of D₂+T₂ mixtures at 295 K

G. T. McConville; D. A. Menke; R. E. Ellefson

J. Vac. Sci. Technol. A 1, 1441–1446 (1983) https://doi.org/10.1116/1.572037

Abstract

View articletitled, Reaction rates of D2+T2 mixtures at 295 K

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Permeation, diffusion, and solution of hydrogen isotopes, methane, and inert gases in/through tetrafluoroethylene and polyethylene

Hitoshi Miyake; Masao Matsuyama; Kan Ashida; Kuniaki Watanabe

J. Vac. Sci. Technol. A 1, 1447–1451 (1983) https://doi.org/10.1116/1.572038

Abstract

View articletitled, Permeation, diffusion, and solution of hydrogen isotopes, methane, and inert gases in/through tetrafluoroethylene and polyethylene

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A system for in situ studies of plasma–surface interactions using x‐ray photoelectron spectroscopy

J. L. Vossen; J. H. Thomas, III; J.‐S. Maa; O. R. Mesker; G. O. Fowler

J. Vac. Sci. Technol. A 1, 1452–1455 (1983) https://doi.org/10.1116/1.572039

Abstract

View articletitled, A system for in situ studies of plasma–surface interactions using x‐ray photoelectron spectroscopy

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New high resolution electron spectrometer for surface vibrational analysis

L. L. Kesmodel

J. Vac. Sci. Technol. A 1, 1456–1460 (1983) https://doi.org/10.1116/1.572040

Abstract

View articletitled, New high resolution electron spectrometer for surface vibrational analysis

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Core level excitation of simple gases

Andong Zhang; John F. Morar; Robert L. Park

J. Vac. Sci. Technol. A 1, 1461–1464 (1983) https://doi.org/10.1116/1.572168

Abstract

View articletitled, Core level excitation of simple gases

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Two different species of deuterium implanted into a pyrolytic graphite observed by XPS–SIMS

Kan Ashida; Kenji Ichimura; Kuniaki Watanabe

J. Vac. Sci. Technol. A 1, 1465–1468 (1983) https://doi.org/10.1116/1.572169

Abstract

View articletitled, Two different species of deuterium implanted into a pyrolytic graphite observed by XPS–SIMS

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Study of cleaved, oxidized, etched, and heat‐treated CdTe surfaces

J.‐P. Häring; J. G. Werthen; R. H. Bube; L. Gulbrandsen; W. Jansen; P. Luscher

J. Vac. Sci. Technol. A 1, 1469–1472 (1983) https://doi.org/10.1116/1.572170

Abstract

View articletitled, Study of cleaved, oxidized, etched, and heat‐treated CdTe surfaces

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Structure analysis of Ir(100) 1×1 by LEED (100–500 eV)

G. Besold; K. Heinz; E. Lang; K. Müller

J. Vac. Sci. Technol. A 1, 1473–1476 (1983) https://doi.org/10.1116/1.572171

Abstract

View articletitled, Structure analysis of Ir(100) 1×1 by LEED (100–500 eV)

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An in situ slow extension rate fracture stage for Auger electron spectroscopy

G. S. Was; H. H. Tischner; J. R. Martin

J. Vac. Sci. Technol. A 1, 1477–1479 (1983) https://doi.org/10.1116/1.572172

Abstract

View articletitled, An in situ slow extension rate fracture stage for Auger electron spectroscopy

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Surface oxidation of molten soft solder: An Auger study

E. E. de Kluizenaar

J. Vac. Sci. Technol. A 1, 1480–1485 (1983) https://doi.org/10.1116/1.572173

Abstract

View articletitled, Surface oxidation of molten soft solder: An Auger study

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Surface topography of oxides on InP thermally grown at high temperatures

J. J. McLaren, III; A. Nelson; K. Geib; R. Gann; C. W. Wilmsen

J. Vac. Sci. Technol. A 1, 1486–1490 (1983) https://doi.org/10.1116/1.572174

Abstract

View articletitled, Surface topography of oxides on InP thermally grown at high temperatures

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A combined instrument for the investigation of catalytic reactions by means of gas chromatography, secondary ion and gas phase mass spectrometry, Auger and photoelectron spectroscopy, and ion scattering spectroscopy

O. Ganschow; R. Jede; L. D. An; E. Manske; J. Neelsen; L. Wiedmann; A. Benninghoven

J. Vac. Sci. Technol. A 1, 1491–1506 (1983) https://doi.org/10.1116/1.572175

Abstract

View articletitled, A combined instrument for the investigation of catalytic reactions by means of gas chromatography, secondary ion and gas phase mass spectrometry, Auger and photoelectron spectroscopy, and ion scattering spectroscopy

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Faceting of a Ge(111) surface and its vicinals during Ag adsorption

E. Suliga; M. Henzler

J. Vac. Sci. Technol. A 1, 1507–1511 (1983) https://doi.org/10.1116/1.572176

Abstract

View articletitled, Faceting of a Ge(111) surface and its vicinals during Ag adsorption

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Carbon segregation to the Pd(111) single crystal surface as seen in carbon monoxide thermal desorption spectra

I. Ratajczykowa

J. Vac. Sci. Technol. A 1, 1512–1517 (1983) https://doi.org/10.1116/1.572177

Abstract

View articletitled, Carbon segregation to the Pd(111) single crystal surface as seen in carbon monoxide thermal desorption spectra

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Emission characteristics of single‐crystal LaB₆ cathodes with large tip radius

Y. Furukawa; M. Yamabe; T. Inagaki

J. Vac. Sci. Technol. A 1, 1518–1521 (1983) https://doi.org/10.1116/1.572178

Abstract

View articletitled, Emission characteristics of single‐crystal LaB6 cathodes with large tip radius

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Magnetically confined low‐pressure gas discharge generated in a vacuum switch

Katsuhiro Kageyama

J. Vac. Sci. Technol. A 1, 1522–1528 (1983) https://doi.org/10.1116/1.572179

Abstract

View articletitled, Magnetically confined low‐pressure gas discharge generated in a vacuum switch

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Properties of a series crossed‐field discharge in a vacuum switch

Katsuhiro Kageyama

J. Vac. Sci. Technol. A 1, 1529–1532 (1983) https://doi.org/10.1116/1.572180

Abstract

View articletitled, Properties of a series crossed‐field discharge in a vacuum switch

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A new high repetition rate shutter to obtain short molecular beam pulses

L. Wolterbeek; J. Hofstra; C. Nijhof

J. Vac. Sci. Technol. A 1, 1533–1538 (1983) https://doi.org/10.1116/1.572181

Abstract

View articletitled, A new high repetition rate shutter to obtain short molecular beam pulses

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Rarefied gas flow in a cylindrical annulus

S. S. Lo; S. K. Loyalka; T. S. Storvick

J. Vac. Sci. Technol. A 1, 1539–1548 (1983) https://doi.org/10.1116/1.572182

Abstract

View articletitled, Rarefied gas flow in a cylindrical annulus

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Net molecular flow conductance of series elements

V. E. Stubblefield

J. Vac. Sci. Technol. A 1, 1549–1552 (1983) https://doi.org/10.1116/1.572183

Abstract

View articletitled, Net molecular flow conductance of series elements

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Simple evaporator for refractory metal thin film deposition in ultrahigh vacuum

J. R. Waldrop; R. W. Grant

J. Vac. Sci. Technol. A 1, 1553–1554 (1983) https://doi.org/10.1116/1.572184

View articletitled, Simple evaporator for refractory metal thin film deposition in ultrahigh vacuum

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A simple, controllable source for dosing molecular halogens in UHV

N. D. Spencer; P. J. Goddard; P. W. Davies; M. Kitson; R. M. Lambert

J. Vac. Sci. Technol. A 1, 1554–1555 (1983) https://doi.org/10.1116/1.572185

Abstract

View articletitled, A simple, controllable source for dosing molecular halogens in UHV

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A simple and efficient internal heater for baking vacuum systems

A. D. LeGrand; E. F. Greene

J. Vac. Sci. Technol. A 1, 1556–1557 (1983) https://doi.org/10.1116/1.572186

Abstract

View articletitled, A simple and efficient internal heater for baking vacuum systems

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A simple, inexpensive device for ion‐bombardment cleaning of samples in ultrahigh vacuum

V. M. Bermudez; R. E. Thomas

J. Vac. Sci. Technol. A 1, 1557–1558 (1983) https://doi.org/10.1116/1.572187

View articletitled, A simple, inexpensive device for ion‐bombardment cleaning of samples in ultrahigh vacuum

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Sample carousel transfer mechanism

D. H. Fearon; H. F. Helbig; S. A. Steward; F. S. Uribe

J. Vac. Sci. Technol. A 1, 1558–1560 (1983) https://doi.org/10.1116/1.572188

Abstract

View articletitled, Sample carousel transfer mechanism

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A stable, pure inert gas source for discharge lamps

Gar B. Hoflund; Robert P. Merrill

J. Vac. Sci. Technol. A 1, 1560–1562 (1983) https://doi.org/10.1116/1.572189

View articletitled, A stable, pure inert gas source for discharge lamps

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Radio‐frequency sputtered indium tin oxide thin films

Michael Russak; Jerome De Carlo

J. Vac. Sci. Technol. A 1, 1563–1564 (1983) https://doi.org/10.1116/1.572263

View articletitled, Radio‐frequency sputtered indium tin oxide thin films

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The properties of Cr–Si–O thin film resistors by dc conventional sputtering

K. Furuta; S. Miyagawa; T. Kamei; H. Ando

J. Vac. Sci. Technol. A 1, 1565–1566 (1983) https://doi.org/10.1116/1.572264

View articletitled, The properties of Cr–Si–O thin film resistors by dc conventional sputtering

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Mechanical scraper for preparing clean soft metal surfaces in UHV

T. G. Kinisky; J. A. Psioda

J. Vac. Sci. Technol. A 1, 1566–1568 (1983) https://doi.org/10.1116/1.572265

View articletitled, Mechanical scraper for preparing clean soft metal surfaces in UHV

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The use of metallic glasses in fabrication of ICF targets

W. L. Johnson; Mark C. Lee

J. Vac. Sci. Technol. A 1, 1568–1570 (1983) https://doi.org/10.1116/1.572266

Abstract

View articletitled, The use of metallic glasses in fabrication of ICF targets

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Status report on ASTM E‐42 Committee on surface analysis

P. H. Holloway

J. Vac. Sci. Technol. A 1, 1570–1573 (1983) https://doi.org/10.1116/1.572267

View articletitled, Status report on ASTM E‐42 Committee on surface analysis

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Erratum: Magnetron sputtering system equipped with a versatile substrate table [J. Vac. Sci. Technol. A 1, 77 (1983)]

H. A. Huggins; M. Gurvitch

J. Vac. Sci. Technol. A 1, 1574 (1983) https://doi.org/10.1116/1.572268

View articletitled, Erratum: Magnetron sputtering system equipped with a versatile substrate table [J. Vac. Sci. Technol. A 1, 77 (1983)]

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Erratum: New developments in the calculation of the molecular flow conductance of a straight cylinder [J. Vac. Sci. Technol. A 1, 143 (1983)]

J. D. Carette; L. Pandolfo; D. Dubé

J. Vac. Sci. Technol. A 1, 1574 (1983) https://doi.org/10.1116/1.572269

View articletitled, Erratum: New developments in the calculation of the molecular flow conductance of a straight cylinder [J. Vac. Sci. Technol. A 1, 143 (1983)]

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Book Review: Physics as natural philosophy

M. A. Paesler

J. Vac. Sci. Technol. A 1, 1575 (1983) https://doi.org/10.1116/1.572270

View articletitled, Book Review: Physics as natural philosophy

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Book Review: Size effects in thin films

John L. Vossen

J. Vac. Sci. Technol. A 1, 1575–1576 (1983) https://doi.org/10.1116/1.572271

View articletitled, Book Review: Size effects in thin films

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Book Review: Applied electron spectroscopy for chemical analysis

H. H. Madden

J. Vac. Sci. Technol. A 1, 1576–1577 (1983) https://doi.org/10.1116/1.572272

View articletitled, Book Review: Applied electron spectroscopy for chemical analysis

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Comparative studies of mercury cadmium telluride single crystal and epitaxial

Paul M. Raccah; U. Lee

J. Vac. Sci. Technol. A 1, 1587–1592 (1983) https://doi.org/10.1116/1.572273

Abstract

View articletitled, Comparative studies of mercury cadmium telluride single crystal and epitaxial

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Latest developments in the growth of Cd_xHg_1−xTe and CdTe–HgTe superlattices by molecular beam epitaxy

J. P. Faurie; A. Million; R. Boch; J. L. Tissot

J. Vac. Sci. Technol. A 1, 1593–1597 (1983) https://doi.org/10.1116/1.572274

Abstract

View articletitled, Latest developments in the growth of CdxHg1−xTe and CdTe–HgTe superlattices by molecular beam epitaxy

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Growth of low dislocation density CdTe films on hydroplaned CdTe substrates by molecular beam epitaxy

T. H. Myers; J. F. Schetzina; T. J. Magee; R. D. Ormond

J. Vac. Sci. Technol. A 1, 1598–1603 (1983) https://doi.org/10.1116/1.572275

Abstract

View articletitled, Growth of low dislocation density CdTe films on hydroplaned CdTe substrates by molecular beam epitaxy

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Recent progress on LADA growth of HgCdTe and CdTe epitaxial layers

J. T. Cheung; T. Magee

J. Vac. Sci. Technol. A 1, 1604–1607 (1983) https://doi.org/10.1116/1.572276

Abstract

View articletitled, Recent progress on LADA growth of HgCdTe and CdTe epitaxial layers

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Horizontal slider LPE of (Hg,Cd)Te

R. A. Wood; R. J. Hager

J. Vac. Sci. Technol. A 1, 1608–1611 (1983) https://doi.org/10.1116/1.572277

Abstract

View articletitled, Horizontal slider LPE of (Hg,Cd)Te

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A study on the purity and SIMS profiling of MOVPE–cadmium mercury telluride

J. B. Mullin; S. J. C. Irvine; A. Royle; J. Tunnicliffe; G. Blackmore; R. Holland

J. Vac. Sci. Technol. A 1, 1612–1614 (1983) https://doi.org/10.1116/1.572278

Abstract

View articletitled, A study on the purity and SIMS profiling of MOVPE–cadmium mercury telluride

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Measured thermal diffusivity of Hg_1−xCd_xTe solids and melts

Lawrence Rozier Holland; Raymond E. Taylor

J. Vac. Sci. Technol. A 1, 1615–1619 (1983) https://doi.org/10.1116/1.572241

Abstract

View articletitled, Measured thermal diffusivity of Hg1−xCdxTe solids and melts

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Density of liquid Hg_1−xCd_xTe

Dipankar Chandra; Lawrence Rozier Holland

J. Vac. Sci. Technol. A 1, 1620–1624 (1983) https://doi.org/10.1116/1.572242

Abstract

View articletitled, Density of liquid Hg1−xCdxTe

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Lattice defects in (Hg,Cd)Te: Investigations of their nature and evolution

H. F. Schaake; J. H. Tregilgas; A. J. Lewis; P. M. Everett

J. Vac. Sci. Technol. A 1, 1625–1630 (1983) https://doi.org/10.1116/1.572243

Abstract

View articletitled, Lattice defects in (Hg,Cd)Te: Investigations of their nature and evolution

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Application of generalized effective mass theory to some native point defects in Hg_1−xCd_xTe

C. L. Wang; S. Wu; D. S. Pan

J. Vac. Sci. Technol. A 1, 1631–1632 (1983) https://doi.org/10.1116/1.572244

Abstract

View articletitled, Application of generalized effective mass theory to some native point defects in Hg1−xCdxTe

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Electronic properties of deep levels in p‐type CdTe

R. T. Collins; T. C. McGill

J. Vac. Sci. Technol. A 1, 1633–1636 (1983) https://doi.org/10.1116/1.572245

Abstract

View articletitled, Electronic properties of deep levels in p‐type CdTe

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Deep centers in gold‐doped HgCdTe

C. A. Merilainen; C. E. Jones

J. Vac. Sci. Technol. A 1, 1637–1640 (1983) https://doi.org/10.1116/1.572246

Abstract

View articletitled, Deep centers in gold‐doped HgCdTe

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Diffusion of gold and mercury self‐diffusion in N‐type Bridgman‐grown Hg_1−x Cd_xTe (x≂0.2)

Margaret Brown; Arthur F. W. Willoughby

J. Vac. Sci. Technol. A 1, 1641–1645 (1983) https://doi.org/10.1116/1.572247

Abstract

View articletitled, Diffusion of gold and mercury self‐diffusion in N‐type Bridgman‐grown Hg1−x CdxTe (x≂0.2)

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Some aspects of Li behavior in ion implanted HgCdTe

L. O. Bubulac; W. E. Tennant; R. A. Riedel; J. Bajaj; D. D. Edwall

J. Vac. Sci. Technol. A 1, 1646–1650 (1983) https://doi.org/10.1116/1.572248

Abstract

View articletitled, Some aspects of Li behavior in ion implanted HgCdTe

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Electron microprobe techniques for routine compositional analysis of (Hg,Cd)Te

T. M. Moore

J. Vac. Sci. Technol. A 1, 1651–1655 (1983) https://doi.org/10.1116/1.572249

Abstract

View articletitled, Electron microprobe techniques for routine compositional analysis of (Hg,Cd)Te

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Real‐time x‐ray topography: Applications to bulk HgCdTe materials

R. G. Rosemeier

J. Vac. Sci. Technol. A 1, 1656–1660 (1983) https://doi.org/10.1116/1.572250

Abstract

View articletitled, Real‐time x‐ray topography: Applications to bulk HgCdTe materials

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Annealing of Hg_1−xCd_xTe: Hg loss rates and annealing of ion implantation damage

K. C. Dimiduk; W. G. Opyd; J. F. Gibbons; T. W. Sigmon; T. J. Magee; R. D. Ormond

J. Vac. Sci. Technol. A 1, 1661–1665 (1983) https://doi.org/10.1116/1.572251

Abstract

View articletitled, Annealing of Hg1−xCdxTe: Hg loss rates and annealing of ion implantation damage

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EBIC characterization of electrically active defects in (Hg,Cd)Te

T. M. Moore; H. F. Schaake

J. Vac. Sci. Technol. A 1, 1666–1668 (1983) https://doi.org/10.1116/1.572252

Abstract

View articletitled, EBIC characterization of electrically active defects in (Hg,Cd)Te

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Compensation densities in n‐type Hg_1−xCd_xTe from transport properties of optically generated free carriers

F. J. Bartoli; C. A. Hoffman; J. R. Meyer

J. Vac. Sci. Technol. A 1, 1669–1671 (1983) https://doi.org/10.1116/1.572253

Abstract

View articletitled, Compensation densities in n‐type Hg1−xCdxTe from transport properties of optically generated free carriers

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The bonding properties of mercury–cadmium telluride

Walter A. Harrison

J. Vac. Sci. Technol. A 1, 1672–1673 (1983) https://doi.org/10.1116/1.572254

Abstract

View articletitled, The bonding properties of mercury–cadmium telluride

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Relation between the electronic states and structural properties of Hg_1−xCd_xTe

A.‐B. Chen; A. Sher; W. E. Spicer

J. Vac. Sci. Technol. A 1, 1674–1677 (1983) https://doi.org/10.1116/1.572255

Abstract

View articletitled, Relation between the electronic states and structural properties of Hg1−xCdxTe

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Empirical tight binding description of Hg_1−xMn_xTe and Hg_1−xCd_xTe

K. C. Hass; H. Ehrenreich

J. Vac. Sci. Technol. A 1, 1678–1682 (1983) https://doi.org/10.1116/1.572256

Abstract

View articletitled, Empirical tight binding description of Hg1−xMnxTe and Hg1−xCdxTe

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An investigation of the far infrared optical properties of Hg_1−xCd_xTe

T. N. Casselman; G. L. Hansen

J. Vac. Sci. Technol. A 1, 1683–1686 (1983) https://doi.org/10.1116/1.572257

Abstract

View articletitled, An investigation of the far infrared optical properties of Hg1−xCdxTe

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HgCdTe heterojunctions

Peter R. Bratt

J. Vac. Sci. Technol. A 1, 1687–1691 (1983) https://doi.org/10.1116/1.572258

Abstract

View articletitled, HgCdTe heterojunctions

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On the determination of the energy band offsets in Hg_1−xCd_xTe heterojunctions

T. N. Casselman; A. Sher; J. Silberman; W. E. Spicer; A.‐B. Chen

J. Vac. Sci. Technol. A 1, 1692–1695 (1983) https://doi.org/10.1116/1.572259

Abstract

View articletitled, On the determination of the energy band offsets in Hg1−xCdxTe heterojunctions

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Surface and interface recombination in thin film HgCdTe photoconductors

Ronald D. Graft; Frederick F. Carlson; John H. Dinan; Phillip R. Boyd; Randolph E. Longshore

J. Vac. Sci. Technol. A 1, 1696–1699 (1983) https://doi.org/10.1116/1.572260

Abstract

View articletitled, Surface and interface recombination in thin film HgCdTe photoconductors

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Comparison of optically modulated absorption and photoconductivity decay lifetime measurements on HgCdTe

W. A. Radford; J. F. Shanley; O. L. Doyle

J. Vac. Sci. Technol. A 1, 1700–1705 (1983) https://doi.org/10.1116/1.572261

Abstract

View articletitled, Comparison of optically modulated absorption and photoconductivity decay lifetime measurements on HgCdTe

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Initial stages of oxide formation on HgCdTe exposed to activated oxygen

J. A. Silberman; D. Laser; I. Lindau; W. E. Spicer; J. A. Wilson

J. Vac. Sci. Technol. A 1, 1706–1711 (1983) https://doi.org/10.1116/1.572262

Abstract

View articletitled, Initial stages of oxide formation on HgCdTe exposed to activated oxygen

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Solid‐state quaternary phase equilibrium diagram for the Hg–Cd–Te–O system

David R. Rhiger; Robert E. Kvaas

J. Vac. Sci. Technol. A 1, 1712–1718 (1983) https://doi.org/10.1116/1.572214

Abstract

View articletitled, Solid‐state quaternary phase equilibrium diagram for the Hg–Cd–Te–O system

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(HgCd)Te–SiO₂ interface structure

J. A. Wilson; V. A. Cotton; Joel Silberman; D. Laser; W. E. Spicer; P. Morgen

J. Vac. Sci. Technol. A 1, 1719–1722 (1983) https://doi.org/10.1116/1.572215

Abstract

View articletitled, (HgCd)Te–SiO2 interface structure

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Passivation properties and interfacial chemistry of photochemically deposited SiO₂ on Hg_0.70Cd_0.30Te

B. K. Janousek; R. C. Carscallen; P. A. Bertrand

J. Vac. Sci. Technol. A 1, 1723–1725 (1983) https://doi.org/10.1116/1.572216

Abstract

View articletitled, Passivation properties and interfacial chemistry of photochemically deposited SiO2 on Hg0.70Cd0.30Te

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Interaction of thin layers of Al and Ge with cleaved (Hg,Cd)Te surfaces

G. D. Davis; N. E. Byer; R. R. Daniels; G. Margaritondo

J. Vac. Sci. Technol. A 1, 1726–1729 (1983) https://doi.org/10.1116/1.572217

Abstract

View articletitled, Interaction of thin layers of Al and Ge with cleaved (Hg,Cd)Te surfaces

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Surface‐tunneling‐induced 1/ f noise in Hg₁_−xCd_xTe photodiodes

W. W. Anderson; H. J. Hoffman

J. Vac. Sci. Technol. A 1, 1730–1734 (1983) https://doi.org/10.1116/1.572213

Abstract

View articletitled, Surface‐tunneling‐induced 1/ f noise in Hg1−xCdxTe photodiodes

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Band gap variation and lattice, surface, and interface ‘‘instabilities’’ in Hg_1−xCd_xTe and related compounds

W. E. Spicer; J. A. Silberman; I. Lindau; A.‐B. Chen; A. Sher; J. A. Wilson

J. Vac. Sci. Technol. A 1, 1735–1743 (1983) https://doi.org/10.1116/1.572206

Abstract

View articletitled, Band gap variation and lattice, surface, and interface ‘‘instabilities’’ in Hg1−xCdxTe and related compounds

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Raman scattering in Hg_0.8Cd_0.2Te

P. M. Amirtharaj; Kwong‐Kau Tiong; Fred H. Pollak

J. Vac. Sci. Technol. A 1, 1744–1748 (1983) https://doi.org/10.1116/1.572207

Abstract

View articletitled, Raman scattering in Hg0.8Cd0.2Te

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Minority carrier lifetime in LPE Hg_1−x Cd_x Te

J. Bajaj; S. H. Shin; J. G. Pasko; M. Khoshnevisan

J. Vac. Sci. Technol. A 1, 1749–1751 (1983) https://doi.org/10.1116/1.572208

Abstract

View articletitled, Minority carrier lifetime in LPE Hg1−x Cdx Te

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Dynamic dielectric response to carrier–carrier interactions in narrow‐gap semiconductors

J. R. Meyer; F. J. Bartoli

J. Vac. Sci. Technol. A 1, 1752–1755 (1983) https://doi.org/10.1116/1.572209

Abstract

View articletitled, Dynamic dielectric response to carrier–carrier interactions in narrow‐gap semiconductors

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Optical absorption edge in Hg_0.7 Cd_0.3Te

J. A. Mroczkowski; D. A. Nelson; R. Murosako; P. H. Zimmermann

J. Vac. Sci. Technol. A 1, 1756–1760 (1983) https://doi.org/10.1116/1.572210

Abstract

View articletitled, Optical absorption edge in Hg0.7 Cd0.3Te

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Transverse magnetoresistance and Hall effect in wide‐gap, p‐type Hg_1−xMn_xTe

J. R. Anderson; W. B. Johnson; D. R. Stone

J. Vac. Sci. Technol. A 1, 1761–1764 (1983) https://doi.org/10.1116/1.572211

Abstract

View articletitled, Transverse magnetoresistance and Hall effect in wide‐gap, p‐type Hg1−xMnxTe

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