In the original paper,1 in Fig. 2(c), there is an error in the citation. The figure in question is reprinted from N. El-Hinnawy et al., Appl. Phys. Lett. 105, 13501 (2014), with the permission of © 2020 AIP Publishing LLC.
There is an error in the drawings for Fig. 3. The vacuum level has been redrawn in both figure parts. A corrected figure and caption are provided. The results and conclusions of this work are not affected by this correction.
Band diagrams for degenerate p-type semiconductors in contact with metals that have (a) φm > χs and (b) φm < χs, where φm is the metal work function and χs is the electron affinity of the semiconductor. The Schottky barrier and Fermi level are denoted by φb and EF, respectively. Note that the case in Fig. 3(b) could also effectively lead to a low-resistance contact due to tunneling.
Band diagrams for degenerate p-type semiconductors in contact with metals that have (a) φm > χs and (b) φm < χs, where φm is the metal work function and χs is the electron affinity of the semiconductor. The Schottky barrier and Fermi level are denoted by φb and EF, respectively. Note that the case in Fig. 3(b) could also effectively lead to a low-resistance contact due to tunneling.