Plasma processing in chambers located downstream from a source are gaining widespread use because they allow etching and deposition with minimal damage. This minimized damage, however, is achieved by using a low ion impact energy, which can lead to a poorer etch anisotropy. The best anisotropy for a given impact energy requires the lowest possible ion temperature. Laser‐induced fluorescence measurements show that room temperature ions can be attained using a multidipole‐confined discharge. In comparison, ion temperatures downstream from electron cyclotron resonance sources are much hotter, according to recent reports.
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Brief Report| November 01 1991
Ion impact etch anisotropy downstream from diffusion plasma sources
M. J. Goeckner;
M. J. Goeckner, J. Goree, T. E. Sheridan; Ion impact etch anisotropy downstream from diffusion plasma sources. J. Vac. Sci. Technol. A 1 November 1991; 9 (6): 3178–3180. https://doi.org/10.1116/1.577142
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