Diethylsilane was used to prepare SiO2 films on Si wafers by a low pressure chemical vapor deposition technique at low temperatures (≤400 °C). The deposited films have good conformality (83%), a low residual carbon concentration (<1 at. %) and a low residual stress (<109 dyn/cm2 ); which compare favorably with films prepared by other processes. We also correlated the growth rates with the processing parameters to show that the deposition process follows the heterogeneous bimolecular reaction kinetics. Infrared spectroscopy was used to detect the presence of HSi–O3 bending band (880 cm−1 ) in SiO2 films prepared under certain processing conditions. Based on the reaction kinetic model, we optimize the processing conditions to reduce the SiH incorporation and mobile charge carrier concentration in SiO2 films.
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September 1991
Research Article|
September 01 1991
SiO2 films by low pressure chemical vapor deposition using diethylsilane: Processing and characterization
D. T. C. Huo;
D. T. C. Huo
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
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M. F. Yan;
M. F. Yan
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
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P. D. Foo
P. D. Foo
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
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J. Vac. Sci. Technol. A 9, 2602–2606 (1991)
Article history
Received:
February 01 1991
Accepted:
March 26 1991
Citation
D. T. C. Huo, M. F. Yan, P. D. Foo; SiO2 films by low pressure chemical vapor deposition using diethylsilane: Processing and characterization. J. Vac. Sci. Technol. A 1 September 1991; 9 (5): 2602–2606. https://doi.org/10.1116/1.577212
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