Dipole scattering high resolution electron energy loss spectroscopy (HREELS) experiments were carried out in specular geometry on CaF2 epilayers on Si(111). Surface and interface optical phonons (Fuchs–Kliewer modes) were measured with intensities and frequencies depending on layer thickness. At low (<50 Å) and intermediate (200 Å) thicknesses, clear deviations were observed between the experimental data and the predictions of the dielectric theory. These deviations can be due to residual stress in the layers. A characterization of the stress was attempted by using impact scattering HREELS to investigate stress‐induced modifications of the surface acoustical phonons. The dispersion curve of the Rayleigh mode was measured for CaF2(111) and for a 15 Å layer CaF2/Si(111) in the two principal directions of the surface Brillouin zone. Striking differences are observed at the M̄ point where the layer frequency is at variance with the single crystal one. Theoretical calculations are in progress in order to extract from these data, a quantitative evaluation of the stress.
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May 1991
Research Article|
May 01 1991
Surface and interface phonons of CaF2 epitaxial layers on Si(111) measured by high resolution electron energy loss spectroscopy
J. L. Longueville;
J. L. Longueville
Laboratoire Interdisciplinaire de Spectroscopie Electronique, Institute for Studies in Interface Sciences, Facultés Universitaires Notre‐Dame de la Paix, B‐5000 Namur, Belgium
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P. A. Thiry;
P. A. Thiry
Laboratoire Interdisciplinaire de Spectroscopie Electronique, Institute for Studies in Interface Sciences, Facultés Universitaires Notre‐Dame de la Paix, B‐5000 Namur, Belgium
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R. Caudano
R. Caudano
Laboratoire Interdisciplinaire de Spectroscopie Electronique, Institute for Studies in Interface Sciences, Facultés Universitaires Notre‐Dame de la Paix, B‐5000 Namur, Belgium
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J. L. Longueville
P. A. Thiry
R. Caudano
Laboratoire Interdisciplinaire de Spectroscopie Electronique, Institute for Studies in Interface Sciences, Facultés Universitaires Notre‐Dame de la Paix, B‐5000 Namur, Belgium
J. Vac. Sci. Technol. A 9, 1670–1675 (1991)
Article history
Received:
October 08 1990
Accepted:
December 03 1990
Citation
J. L. Longueville, P. A. Thiry, R. Caudano; Surface and interface phonons of CaF2 epitaxial layers on Si(111) measured by high resolution electron energy loss spectroscopy. J. Vac. Sci. Technol. A 1 May 1991; 9 (3): 1670–1675. https://doi.org/10.1116/1.577483
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