Erratum: Physical and chemical properties of the anodic oxide/HgCdTe interface [J. Vac. Sci. Technol. A 7, 474 (1989)]

Stahle, C. M.; Helms, C. R.; Schaake, H. F.; Strong, R. L.; Simmons, A.; Pallix, J. B.; Becker, C. H.

doi:10.1116/1.576560

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Erratum| July 01 1990

Erratum: Physical and chemical properties of the anodic oxide/HgCdTe interface [J. Vac. Sci. Technol. A 7, 474 (1989)]

C. M. Stahle;

C. M. Stahle

Stanford Electronics Laboratories, Stanford University, Stanford, California 94305

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C. R. Helms;

C. R. Helms

Stanford Electronics Laboratories, Stanford University, Stanford, California 94305

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H. F. Schaake;

H. F. Schaake

Central Research Laboratories, Texas Instruments, Dallas, Texas 75265

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R. L. Strong;

R. L. Strong

Central Research Laboratories, Texas Instruments, Dallas, Texas 75265

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A. Simmons;

A. Simmons

Central Research Laboratories, Texas Instruments, Dallas, Texas 75265

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J. B. Pallix;

J. B. Pallix

Molecular Physics Laboratory, SRI International, Menlo Park, California 94025

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C. H. Becker

Molecular Physics Laboratory, SRI International, Menlo Park, California 94025

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J. Vac. Sci. Technol. A 8, 3373 (1990)

https://doi.org/10.1116/1.576560

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Erratum: Physical and chemical properties of the anodic oxide/HgCdTe interface [J. Vac. Sci. Technol. A 7, 474 (1989)]

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Erratum: Physical and chemical properties of the anodic oxide/HgCdTe interface [J. Vac. Sci. Technol. A 7, 474 (1989)]

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