Fracto‐emission during the interfacial failure of a metal–oxide‐semiconductor system: Au–SiO₂–Si

Two fracto‐emission components (electron and photon emission) produced by the adhesive failure of gold films peeled in vacuum from oxidized silicon were measured for different oxide thicknesses. The Au adhesive strength was found to decrease with increasing oxide thickness, whereas the fracto‐emission intensities and durations increased significantly with oxide thickness. We interpret these results in terms of interfacial charge created during the formation of the metal–oxide‐semiconductor (MOS) structure, leading to charge separation during fracture and to subsequent charge transport within the MOS structure.