The different kinds of mixed crystal systems for GaAs1–xPx and Ga1–xAlxP have been investigated by x‐ray photoemission spectroscopy (XPS). The core level binding energies of Ga in GaAs1−xPx increase, whereas those of P in GaAs1−xAlPxP decrease with composition x, which are analyzed using Pauling’s ionicity and the ionicity scale of Kowalczyk et al. For two kinds of mixed crystals, we found that the energies of plasmon loss peaks increase, all major peaks in the valence band shift the band edge, and the top of the valence band recedes linearly with composition x. The composition variation of the energy gap for mixed crystals are caused basically by the top of the valence band receding.
Skip Nav Destination
Research Article| March 01 1990
Photoemission study of GaAs1−xPx and Ga1−xAlxP mixed crystals
Z. T. Zhong; Photoemission study of GaAs1−xPx and Ga1−xAlxP mixed crystals. J. Vac. Sci. Technol. A 1 March 1990; 8 (2): 775–780. https://doi.org/10.1116/1.576916
Download citation file:
Don't already have an account? Register
You could not be signed in. Please check your credentials and make sure you have an active account and try again.
Could not validate captcha. Please try again.