The spreading resistance technique applied to mercury cadmium telluride heterojunctions

The spreading resistance technique has been used to characterize beveled heterojunctions of mercury cadmium telluride grown by molecular beam epitaxy. We show that important information on the growth axis profiles can be recovered when probing both at room temperature and cryogenic temperature. Examples of in situ and ex situ doped structures as well as CdHgTe/CdTe and CdHgTe/HgTe heterojunctions are described. In the latter case the measurements seem to indicate the presence of an inversion layer between the n‐type narrow bandgap material and the semimetal.