Chemical doping of HgCdTe is an important issue in II–VI compound semiconductors. In this paper, we will report on the molecular‐beam epitaxy (MBE) growth and characterization of n‐ and p‐type HgCdTe. We have grown n‐ and p‐type layers of HgCdTe with indium and arsenic as the dopants using MBE at 170 °C–180° C without photo or ion excitation. The doped layers, which range from 1015 cm−3 to 1018 cm−3 have been characterized by a variety of techniques including infrared IR transmission, Hall measurement, scanning electron microscopy, minority carrier lifetime, and secondary ion mass spectroscopy. The results indicate that n‐type alloy layers are easier to form than p type because of the efficient incorporation of indium in the mercury (or cadmium) sublattice. Memory effects of indium were not observed. We have also demonstrated that our p‐type layers remain p type after mercury anneal indicating that they are extrinsically doped. The breakthrough in chemical doping of HgCdTe has enabled us to grow several double layer heterojunction structures. Several diodes have been fabricated and their electrical and optical characteristics are discussed.
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March 1990
Research Article|
March 01 1990
Chemical doping of HgCdTe by molecular‐beam epitaxy
Owen K. Wu;
Owen K. Wu
Hughes Research Laboratories(RL‐62), 3011 Malibu Canyon Road, Malibu, California 90265
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G. S. Kamath;
G. S. Kamath
Hughes Research Laboratories(RL‐62), 3011 Malibu Canyon Road, Malibu, California 90265
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W. A. Radford;
W. A. Radford
Santa Barara Research Center, 75 Coromar Drive, Goleta, California 93117
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P. R. Bratt;
P. R. Bratt
Santa Barara Research Center, 75 Coromar Drive, Goleta, California 93117
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E. A. Patten
E. A. Patten
Santa Barara Research Center, 75 Coromar Drive, Goleta, California 93117
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Owen K. Wu
G. S. Kamath
W. A. Radford
P. R. Bratt
E. A. Patten
Hughes Research Laboratories(RL‐62), 3011 Malibu Canyon Road, Malibu, California 90265
J. Vac. Sci. Technol. A 8, 1034–1038 (1990)
Article history
Received:
October 04 1989
Accepted:
November 03 1989
Citation
Owen K. Wu, G. S. Kamath, W. A. Radford, P. R. Bratt, E. A. Patten; Chemical doping of HgCdTe by molecular‐beam epitaxy. J. Vac. Sci. Technol. A 1 March 1990; 8 (2): 1034–1038. https://doi.org/10.1116/1.577001
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